Abstract: A light emitting device (100) is provided, which comprises a substrate (101) accomodating at least one light emitting diode (104) and an elastomeric layer (105) arranged to receive light from the light emitting diode(s) (104). The elastomeric layer (105) comprises phosphors (106), which enhance the output of light from the device (100). The light emitting device (100) is flexible and may be incorporated into a fabric, such as a textile or a plastics. Consequently, a textile product (300) comprising such a device (100) is provided.

Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

Abstract: A method of manufacturing a light emitting device is provided. An epitaxial layer is first formed at a plurality of separated regions on a substrate and a second electrode layer is formed on the epitaxial layer. Subsequently, the substrate is removed from the epitaxial layer and a first electrode layer is formed under the epitaxial layer, after which the second electrode layer is divided into chip units.

Abstract: A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.

Abstract: A light-emitting diode (LED) device is provided. The LED device is formed by forming an LED structure on a first substrate. A portion of the first substrate is converted to a porous layer, and a conductive substrate is formed over the LED structure on an opposing surface from the first substrate. The first substrate is detached from the LED structure along the porous layer and any remaining materials are removed from the LED structure.

Abstract: This invention relates to light-emitting diodes or devices (LEDs), such as LED lighting assemblies and methods of manufacturing them. More particularly, this invention relates to white-light LED lighting assemblies, devices, and components, methods for packaging white-light LEDs, and LED devices produced thereby. A method for packaging a white-light LED is provided comprising providing a substrate with a resin injection hole and a vent hole, a packaging housing, at least one LED chip, a supporting frame and resin, installing the LED chip on the substrate, coating an inner wall of the packaging housing with fluorescent powder, connecting the packaging housing to the substrate by way of the supporting frame, so that a cavity is formed therebetween, injecting the resin into the cavity between the packaging housing and the substrate by way of the resin injection hole so that gas within the cavity is discharged by way of the vent hole, and curing the resin.

Abstract: In a semiconductor light emitting device, light is lost from a side surface of a substrate; therefore, if a substrate side surface occupies a large area, it decreases light extraction efficiency. The area of the substrate side surface may be reduced by reducing a thickness of the substrate. However, a thin substrate has low mechanical strength and is cracked by a stress during work process, and that decreases the yield. A light emitting layer is formed on a substrate. After fixed to a grinding board with wax, the substrate is ground to thin. A support substrate is then bonded to the substrate for reinforcement. The substrate is fixed to an electrode and others, with the support substrate bonded to the substrate. The support substrate is lastly removed.

Abstract: An apparatus that includes a first diode laser and a silicon-based support structure is provided. The first diode laser is configured to emit a first laser beam when powered. The support structure includes a silicon-based support plate, a silicon-based first fin structure, and a silicon-based second fin structure. The support plate has a first primary surface and a second primary surface opposite the first primary surface. The first fin structure has a first primary surface, a second primary surface opposite the first primary surface, and a plurality of edges between the first and the second primary surfaces including a first edge and a second edge opposite the first edge. The first fin structure is physically coupled to the support plate with the first edge of the first fin structure attached to the first primary surface of the support plate.

Abstract: A display device includes first and second substrates, and first and second alignment keys. The first and second substrates have first and second display regions and first and second peripheral regions, respectively. The first alignment key is disposed in the first peripheral region of the first substrate. The first alignment key includes a first pattern and a second pattern. The second alignment key is disposed in the second peripheral region of the second substrate such that the second alignment key faces the first alignment key. As a result, first alignment key may be formed through a procedure of forming the pixel electrode. Therefore, there exists no deviation between the first alignment key and the pixel electrode and the first alignment key may be easily detected because of the first pattern that is opaque, so that misalignment is prevented.

Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.

Abstract: According to an embodiment of the invention, an array substrate includes a first test line, a second test line, a first source line group, a second source line group, a plurality of gate lines and a switching device. The first test line extends along a first direction. The second test line is substantially in parallel with the first test line. The first source line group that extends along a second direction that is substantially perpendicular to the first direction, and electrically connected to the first test line. The second source line group extends along the second direction and is electrically connected to the second test line. Each of the gate lines extends along the first direction. The switching device is formed on a region surrounded by the first source line, the second source line and the gate lines. Therefore, defects induced by static electricity generated during manufacturing process are reduced.

Abstract: The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination.

Abstract: A solid state radiation source array is provided, the array comprising at least one solid state ultraviolet radiation source and at least one solid state infrared radiation source.

Abstract: A lighting apparatus for emitting polarized white light, which includes at least a first light source for emitting primary light comprised of one or more first wavelengths and having a first polarization direction; and at least a second light source for emitting secondary light in the first polarization direction, comprised of one or more secondary wavelengths, wherein the first light and the secondary light are combined to produce a polarized white light. The lighting apparatus may further comprise a polarizer for controlling the primary light's intensity, wherein a rotation of the polarizer varies an alignment of its polarization axis with respect to the first polarization direction, which varies transmission of the primary light through the polarizer, which controls a color co-ordinate or hue of the white light.

Abstract: The present invention replaces the conventional cold cathode fluorescent tubes used in backlighting units of liquid crystal displays with an integrated electro-luminescent film structure, subdivided into electrically isolated micro-panels. Ideally, the electro-luminescent structure comprises separate red, green and blue micro-panels providing full color capabilities. Alternatively, the electro-luminescent film structure includes stacked groups of layers, in which each group emits a different color and is independently controllable.

Abstract: A semiconductor device includes a semiconductor element, an electrode formed on the semiconductor element, and a protective member covering the semiconductor element. The protective member is formed with a through-hole facing the electrode. In the through-hole, a wiring pattern is formed to be electrically connected to the electrode.

Abstract: The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.

Abstract: A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.

Abstract: An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Abstract: A display panel includes a substrate having a display area and a blank area. The blank area includes at least one of a non-metal line region and a metal-line region. The non-metal line region includes a plurality of insulating patterns and a first conductive pattern layer formed on the substrate. The insulating patterns are isolated from each other by the first conductive pattern layer. The metal-line region includes an insulating multilayer formed on the substrate and a conductive pattern layer formed on the insulating multilayer. Several isolated zones are formed by the conductive pattern layer on the surface of the insulating multilayer.

Abstract: An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.

Abstract: A low profile, side-emitting LED with one or more optical elements, such as a reflector or lens, optically coupled to each light emitting sidewall is described. In one embodiment, a reflector is used to redirect the light emitted from each sidewall to a forward direction, e.g., in a flash configuration. In another embodiment, a lens is used to collimate the side emitted light in the horizontal plane, e.g., for backlighting. Each entrance surface of the lens is positioned so that the bottom edge is at or below the bottom of the light emitting sidewall so that the base of the lens does not block light that is emitted by the LED.

Abstract: There are provided a light emitting device and a backlight unit including the same. The light emitting device includes a package body having opposing first and second main surfaces and side surfaces, and formed of a curable resin; first and second external terminal blocks opposing each other and each having first and second surfaces formed on the first and second main surfaces and side surfaces, the first and second external terminal blocks each including a connecting part having a bonding portion located inside the package body and a terminal portion connected to the bonding portion and exposed outward; and an LED chip including an electrode forming surface where first and second electrodes are formed and a light emitting surface located opposite to the electrode forming surface, the LED chip having the first and second electrodes electrically connected to the bonding portions of the first and second external terminal blocks, respectively.

Abstract: The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel.

Abstract: The present invention relates to a light emitting device. According to the present invention, the light emitting device comprises a substrate, a plurality of light emitting cells disposed on the substrate, a first insulation layer disposed on each light emitting cell, an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells, and a second insulation layer disposed on the electrically conductive material. Each light emitting cell comprises a first semiconductor layer, a second semiconductor layer, and an inclined surface. The second insulation layer corresponds to a contour of each light emitting cell.

Abstract: Disclosed is a light-emitting device. The light-emitting device comprises a blue light-emitting source and a light-emitting source. The light-emitting source includes first semiconductor nanocrystals and second semiconductor nanocrystals. The first and second nanocrystals emit lights of different wavelengths from each other to produce a color complementary to blue. The first and second semiconductor nanocrystals are spatially clustered to form first and second composites respectively.

Abstract: An electronic device including a protection circuit for a light-emitting device An electronic device is provided that includes a protection circuit for a light-emitting device. The protection circuit comprises a first node adapted to be coupled to an anode of the light-emitting device and a second node adapted to be coupled to a cathode of the light-emitting device. A voltage detection stage is coupled between the first and second nodes. The voltage detection stage is adapted to detect an overvoltage condition between the first and second nodes. Furthermore, the protection circuit comprises a thyristor coupled with its anode to the first node, its cathode to the second node to the voltage detection stage. When the overvoltage condition is detected in normal operation the thyristor is controlled to open so that the current can flow through the thyristor.

Abstract: A TFT-LCD array substrate and a manufacturing method thereof. The array substrate comprises a gate line, a data line, and a pixel electrode, and the pixel electrode is disposed in a pixel region defined by the intersection between the gate line and the data line. In the pixel region, a partition groove for forming a pixel electrode pattern is provided at the periphery of the pixel electrode. This structure is helpful to form a pixel electrode pattern by a lift-off process, which significantly reduces the production cost and improves the production yield.

Abstract: Disclosed is a light emitting diode (LED) device that comprises a crystal structure of a sapphire substrate-free gallium nitride (GaN) LED, wherein the crystal structure is mounted on a first surface of a sub-mount substrate in the form of a unit chip, and the first surface of the sub-mount substrate has a surface area greater than the surface area of a region in which the unit chip is bonded. Preforms for manufacturing the LED device and a method for manufacturing the LED device are also disclosed. The sapphire substrate, on which the crystal structure of the light emitting diode has grown, is processed into a unit chip before being removed. Thus, any crack in the crystal structure of the light emitting diode that may occur during the removal of the sapphire substrate can be prevented. Therefore, a thin light emitting diode device can be manufactured in a mass production system.

Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 ?m or less.

Abstract: An object of the present invention is to realize a numerical aperture higher than that of a pixel having a conventional construction by using a pixel circuit having a novel construction in an electro-optical device. Therefore, it is utilized that the electric potential of a gate signal line in a row except for an i-th row is set to a constant electric potential in a period except for when a gate signal line (106) in the i-th row is selected. A gate signal line 111 in an (i?1)-th row is also used as an electric current supply line for an EL element (103) controlled by the gate signal line (106) in the i-th row. Thus, wiring number is reduced and high numerical aperture is realized.

Abstract: A liquid crystal display device includes a pixel electrode, a thin film transistor, a gate line electrically coupled to the pixel through the thin film transistor and a first auxiliary layer having a first connecting portion overlapped with the pixel electrode and a second connecting portion overlapped with the gate line. The pixel electrode is non-overlapped with the gate line and the first auxiliary layer is electrically insulated from the pixel electrode and the gate line. When a white defect occurs, the pixel electrode is electrically connected to the gate line through the first auxiliary layer thereby repairing the white defect as a black defect.

Abstract: An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source, exhibiting excellent in-plane uniformity in an emission intensity is provided. The light-emitting-device comprising a plurality of light-emitting-units formed over a substrate, wherein the light-emitting-unit has a compound semiconductor thin-film crystal layer 24, 25, 26 a first and a second-conductivity-type-side electrode 27, 28; a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrode are formed on the opposite side to the light-extraction direction; the light-emitting-units are electrically separated each other by a light-emitting-unit separation-trench which is formed by removing the thin-film crystal layer from the surface to an inside portion of the buffer layer.

Abstract: In a protection circuit connected, via lines including an inductance component, to a circuit to be protected, a first transistor is arranged on a path to ground from a connection point of the protection circuit and the line. A second transistor is arranged on a path to ground from a connection point of the circuit to be protected and the line, and extracts, from a connection point, a current corresponding to a current flowing in the first transistor. The first and the second transistors are NPN bipolar transistors having a base and an emitter are commonly connected. A resistor is connected between the base and the emitter of the first transistor, and a diode is connected between the base and a collector.

Abstract: An OLED display device includes a plurality of pixels including sub-pixels arranged along a first direction, the sub-pixels being arranged in an order emitting red, blue, and green lights along the first direction or in a reverse order, wherein an arrangement of colors of light emitted from sub-pixels of one pixel is symmetrical to an arrangement of colors of light emitted from sub-pixels of an adjacent pixel, and wherein a light emitting layer of the sub-pixel emitting red light includes a light emitting layer emitting red light and a light emitting layer emitting blue light, a light emitting layer of the sub-pixel emitting blue light includes a light emitting layer emitting blue light, and a light emitting layer of the sub-pixel emitting green light includes a light emitting layer emitting green light and a light emitting layer emitting blue light.

Abstract: This application discloses alight-emitting diode device, comprising an epitaxial structure having a light-emitting layer, a first-type conductivity layer, and a second-type conductivity layer wherein the thicknesses of the first-type conductivity confining layer is not equal to the second-type conductivity confining layer and the light-emitting layer is not overlapped with the portion of the epitaxial structure corresponding to the peak zone of the wave intensity distribution curve along the direction of the epitaxy growth.

Abstract: A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

Abstract: A light emitting device includes a light emitting element emitting light, a first substrate on which the light emitting element is mounted, a second substrate forming a sealing space for the light emitting element between the first substrate and the second substrate and a light exiting window for allowing light emitted from the light emitting element to exit, in which at least one of the first substrate and the second substrate has cleavage characteristics and a cleavage plane thereof serves as a window attaching surface to which the light exiting window is attached.

Abstract: An optoelectronic semiconductor chip (12) is disclosed comprising a thin-film semiconductor body (8), which comprises a semiconductor layer sequence (2, 20) having an active region (3) suitable for generating radiation, and comprising a carrier layer (7), which is formed on the semiconductor layer sequence and carries the thin-film semiconductor body.

Abstract: A laminated structure includes a wettability variable layer formed on a substrate, including a material whose critical surface tension varies by receiving energy so that high and low surface energy regions are formed; a conductive layer formed in one of the high surface energy regions; and an insulating layer formed in such a manner as to cover the conductive layer, wherein another one of the high surface energy regions is formed in such a manner as to surround a periphery of a circuit formation region in which a plurality of the conductive layers are formed; and the insulating layer is formed in such a manner as to also cover the another one of the high surface energy regions so that an adhesive guard ring region is formed between the wettability variable layer and the insulating layer.

Abstract: In a method for producing a semiconductor component, in particular a semiconductor structure having a surface structure or topography which is produced by means of electronic components (2) on a substrate (1), at least one electronic component (2) is applied to a substrate (1), and an isolation layer (3) is applied to the topography which is produced by means of the at least one component (2) on the substrate (1). Contact-making openings (5) are then produced in the isolation layer (3) at contact points (8, 9) for the at least one electronic component, the isolation layer (3) and the contact points (8, 9) in the contact-making openings (5) are planar-metallized, and the metallization is structured in order to produce electrical connections (4), with the isolation layer (3) having a glass coating.

Abstract: A light emitting diode comprises a sheet-like package body, a barricade, a light emitting diode die, and fluorescent filler. The sheet-like package body has a die-bonding region. The barricade is a transparent wall that is disposed on the die-bonding region, and is integrated with the sheet-like package body or is adhered to sheet-like package body. The light emitting diode die is disposed on the region enclosed by the barricade, and the fluorescent filler is also filled into the region and surrounds the light emitting diode die. The light emitting diode and the method for packaging the light emitting diode can improve the uniformity and efficiency of the outputting light emitted from the light emitting diode, and the loss of the outputted light is reduced.

Abstract: A vertical light-emitting diode (VLED) structure that may impart increased luminous efficiency over conventional LEDs and VLEDs is described. As additional benefits, some embodiments may have less susceptibility to electrostatic discharge (ESD) and higher manufacturing yields than conventional devices. To accomplish these benefits, embodiment of the invention may utilize a spacer or other means to separate the p-doped layer from the active layer, thereby increasing the distance between the active layer and the reflective layer within the VLED structure.

Abstract: A semiconductor chip comprises: a semiconductor body which comprises a semiconductor layer sequence suitable for emitting electromagnetic radiation of a first wavelength range from its front side; and a first wavelength-converting layer on at least one first partial region of the front side of the semiconductor body with a first wavelength conversion substance, which converts radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, wherein at least one second partial region of the front side is free of the first wavelength-converting layer. An optoelectronic component comprising such a semiconductor chip and a method for producing the semiconductor chip are furthermore described.

Abstract: The embodiment discloses a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a first electrode formed under the first conductive semiconductor layer and comprising a patterns of a predetermined shape, and a nitride semiconductor layer between the patterns of the first electrode.

Abstract: A display substrate includes a gate electrode, a gate insulating layer, and a semiconductor layer that are sequentially formed on a substrate. Also, the display substrate includes a color filter layer formed on the substrate and exposing a portion of the semiconductor layer, and source and drain electrodes that each overlap with the semiconductor layer and the color filter layer. The gate electrode, the gate insulating layer, and the semiconductor layer have the same shape as each other, and the gate electrode is insulated from the gate insulating layer and the semiconductor layer by the color filter layer.

Abstract: Broadband light source systems, devices, and methods with a tunable spectrum are described by multiplexing a plurality of light sources, such as LEDs, with thin-film filters or diffraction gratings. A plurality of light sources with different or same wavelengths are multiplexed together to construct a combined broadband light source. A diffraction grating diffracts light beams from the plurality of light sources to a slit-shaped aperture, depending on selected light sources, the relative positions of the light sources to the slit-shaped aperture, and the type of grating to produce a tunable spectrum.

Abstract: A light emitting device includes a light emitting diode chip, a heat conductive plate mounting thereon the light emitting diode chip, a sub-mount member disposed between said light emitting diode chip and said heat conductive plate, a dielectric substrate stacked on the heat conductive plate and being formed with a through-hole through which the sub-mount member is exposed, an encapsulation member for encapsulation of said light emitting diode chip, and a lens superimposed on the encapsulation member. The sub-mount member is formed around a coupling portion of the light emitting diode chip with a reflective film which reflects a light emitted from a side face of the light emitting diode chip. The sub-mount member is selected to have a thickness such that the reflecting film has its surface spaced away from said heat conductive plate by a greater distance than said dielectric substrate.

Abstract: In a method for fabricating a flexible pixel array substrate, first, a release layer is formed on a rigid substrate. Next, on the release layer, a polymer film is formed, the adhesive strength between the rigid substrate and the release layer being higher than that between the release layer and the polymer film. The polymer film is formed by spin coating a polymer monomer and performing a curing process to form a polymer layer. Afterwards, a pixel array is formed on the polymer film. The polymer film with the pixel array formed thereon is separated from the rigid substrate.

Abstract: The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of a high-temperature AlN buffer layer. An AlN buffer layer is formed on top of a growth substrate, and then nitride semiconductor crystals are grown on top of the AlN buffer layer. In a stage of manufacturing the nitride semiconductor, the crystal of the AlN buffer layer is grown at a high temperature of 900° C. or higher. In addition, an Al-source material of the AlN buffer layer is started to be supplied first to a reaction chamber and continues to be supplied without interruption, and then a N-source material is supplied intermittently.