Abstract: There are provided a printed circuit board and a method of manufacturing the same. The printed circuit board according to an exemplary embodiment of the present disclosure includes: a substrate; a metal root layer formed by injecting and depositing metal particles into and on the substrate; and a circuit layer formed on the metal root layer.

Abstract: The invention relates to a method for determining the reactive gas consumption in a coating process using plasma, comprising the following steps: a) admitting reactive gas into a coating chamber, wherein the corresponding reactive gas flow is measured and, at the same time, the partial pressure prevailing in the coating chamber is measured, without igniting a plasma; b) admitting reactive gas into a coating chamber, wherein the corresponding reactive gas flow is measured and, at the same time, the partial pressure prevailing in the coating chamber is measured, wherein a plasma is ignited.

Abstract: Systems and methods for high and ultra-high vacuum physical vapor deposition with in-situ magnetic field are disclosed herein. An exemplary method for depositing a film in an evacuated vacuum chamber can include introducing a sample into the vacuum chamber. The sample can be rotated. A magnetic field can be applied that rotates synchronously with the rotating sample. Atoms can be deposited onto the sample while the sample is rotating with the magnetic field to deposit a film while the magnetic field induces magnetic anisotropy in the film.

Abstract: A system for use in coating an interior surface of an object, the system including a vacuum chamber enclosure defining an interior cavity configured to receive the object, a first electrode positioned within the interior cavity of the vacuum chamber enclosure, and a second electrode positioned within the interior cavity such that a space between the first and second electrodes is at least partially defined by the interior surface of the object. The first electrode is fabricated from a first material and the second electrode is fabricated from a second material. The system includes an arc supply coupled to the first and second electrodes. The arc supply selectively vaporizes material from one of the first electrode and the second electrode when current is supplied from one of the first and second electrodes such that the vaporized material forms a layer of material on the interior surface of the object.

Abstract: Directional material deposition in physical vapor deposition (PVD) technology. In particular, the invention concerns PVD apparatus, which comprises a vacuum tight outer vessel accommodating a material source, at least two substrates arranged to define a substrate plane spaced apart from said material source, substrates facing the material source with a surface to be treated. The diameter of this material source is smaller, in particular significantly smaller, than the diameter of any of the substrates. Narrow angular distribution and a high level of uniformity is achieved at low substrate temperature.

Abstract: In various embodiments, a physical vapor deposition tile arrangement is provided. The physical vapor deposition tile arrangement may include a plurality of physical vapor deposition tiles arranged next to each other; and a resilient structure configured to press the plurality of physical vapor deposition tiles together.

Abstract: The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.

Abstract: A vacuum film formation method for forming at least one inorganic layer on a support, which comprise transporting a support of which the area of the surface to be coated with an inorganic layer formed thereon is a (unit: cm2) into a first vacuum tank having a capacity of at most 100a (unit: cm3) under atmospheric pressure, degassing the first vacuum tank into a vacuum, transporting the support from the first vacuum tank to a second vacuum tank while the vacuum condition is kept as such, and forming at least one inorganic layer on the support in the second vacuum tank.

Abstract: In a method for forming a metal fluoride film, a metal fluoride film is formed on a substrate by sputtering using a metal target and a mixed gas containing O2 gas and a reactive gas being a fluorocarbon gas.

Abstract: Provided is a plasma generation apparatus capable of generating uniform plasma over a wide range. The plasma generation apparatus includes two oppositely arranged plasma guns each injecting a discharge gas to be ionized, and having a cathode for emitting electrons, and a converging coil for forming a magnetic flux to guide the emitted electrons, and polarities of the converging coils with respect to the cathodes in the two plasma guns are opposite to each other.

Abstract: A plasma deposition assembly for use in coating an interior surface of an object is provided. The assembly includes a head portion including an anode and a cathode adjacent to the anode. The cathode is fabricated from a coating material. The cathode also includes an outer surface adjacent to the interior surface of the object, wherein current is supplied to the cathode to form an arc on the outer surface such that the coating material is directed substantially radially outward from the outer surface of the cathode towards the interior surface of the object. The assembly also includes a moveable arm coupled to the head portion and configured to translate the head portion relative to the interior surface of the object as the arc deposits the coating material on the interior surface of the object.

Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-shaped structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-shaped structures on the petal-shaped structure. Therefore, the composite field emission source with high strength and nano coral-shaped structures can be obtained, whereby improving the effect and life of electric field emission.

Abstract: An objective of the present invention is to provide a sputtering apparatus capable of obtaining an adequate film thickness distribution on a substrate surface even if a target projection plane is kept from being projected on the substrate. A sputtering apparatus includes: a process chamber; a substrate holder being rotatable in an in-plane direction of the substrate while holding the substrate; and a sputtering cathode located obliquely to the substrate holder, and arranged to incline to the substrate holder. A projection plane of a target holding surface of the sputtering cathode projected in a direction along a center normal line to the target holding surface onto a plane containing a substrate mounting surface of the substrate holder is formed outside the substrate mounting surface of the substrate holder, and the center normal line to the substrate mounting surface and the center normal line to the sputtering cathode are not coplanar.

Abstract: Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.

Abstract: In a method for coating a substrate in a vacuum chamber having a rotating magnetron, wherein a substrate is guided past the magnetron in a substrate transport direction and is coated by a material, which has been isolated from a target connected to the magnetron, and, optionally with the material reacting with a reactive gas present in the vacuum chamber, homogeneity of the coating layer on a substrate is improved by stabilizing the working point by way of the target rotation. This is achieved in that a periodic change of a first process parameter caused by the target revolution is compensated for by a periodic change of a second process parameter having a determined level and/or by employing two magnetrons having different rotational speeds.

Abstract: This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.

Abstract: In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target.

Abstract: Apparatus for providing a magnetic field within a process chamber are provided herein. In some embodiments, an apparatus for providing a magnetic field within a process chamber includes: an inner rotating mechanism including a first plate having a central axis, wherein the first plate includes and a first plurality of magnets and is rotatable about the central axis; and an outer lifting mechanism including a ring disposed proximate the first plate, the ring having a second plurality of magnets coupled to a bottom surface of the ring proximate the peripheral edge of the ring, wherein the ring is movable in a direction perpendicular to the first plate.

Abstract: System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.

Abstract: A sputtering system comprises a magnetron assembly for depositing liquid metal films on a substrate. The magnetron assembly comprises a horizontal planar magnetron with a liquid metal target, a cylindrical rotatable magnetron with a metal target and a set of one or more shields forming a chamber between the planar and the rotatable magnetron.

Abstract: In order to provide an adhesion preventing plate for a vacuum film formation apparatus, the adhesion preventing plate being capable of suppressing the peel-off of an adhered film to an extremely low level regardless of a protection target member, the adhesion preventing plate is arranged so that the area of contact with the protection target member is reduced and a part other than the contact surface is thermally insulated.

Abstract: A method of forming a metalloid-containing material comprises the step of preparing a hydrometalloid compound in a low volume on-demand reactor. The method further comprises the step of feeding the hydrometalloid compound prepared in the microreactor to a deposition apparatus. Additionally, the method comprises the step of forming the metalloid-containing material from the hydrometalloid compound via the deposition apparatus. A deposition system for forming the metalloid-containing material comprises at least one low volume on-demand reactor coupled to and in fluid communication with a deposition apparatus.

Abstract: Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer—usually containing a nickel material—covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.

Abstract: The invention reduces generation of particles. An embodiment of the preset invention includes a target holder (6) for holding a target (4), a power source (12) for applying a power to the target holder (6), a substrate holder (7), a first shutter (14) capable of opening and closing between the target (4) and the substrate holder (7), a second shutter (19) located closer to the substrate holder (7) than to the first shutter (14), and capable of opening and closing between the target holder (6) and the substrate holder (7), and a controller (con) for controlling the power source (12) and the first and second shutters (14), (19). The controller (con) applies a first power to the target holder (6) in the state where the first shutter (14) is closed, then opens the first shutter (14), and further applies a second power higher than the first power to the target holder (6) in the state where the second shutter (19) is closed.

Abstract: The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (?) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced.

Abstract: A method for manufacturing a metal film being formed on a surface of a non-electric conductive base material includes processes of a deposition process of releasing a metal being formed in a particle or being vaporized from at least one of targets, the target being made of solid metal and depositing a metal thin film on the surface of the base material by having the released metal hit the surface of the base material from a plurality of directions; and a crack forming process of forming a crack in the metal thin film by applying thermal stress to the metal thin film.

Abstract: Provided is a sputtering apparatus which can form a multilayer film giving high productivity and with less spiral pattern by effective use of targets, and a method of forming multilayer film using the apparatus. An embodiment is a multilayer-film sputtering apparatus comprising: a rotatable cathode unit (30) having cathodes (7a and 7b) arranged on the same circumference with respect to the rotational center, and having a power-supply mechanism for supplying power to each cathode; a sensor (14) for detecting the position of cathode; and a rotation mechanism for rotating the cathode unit (30).

Abstract: A method for reducing the optical loss of the multilayer coating below a predetermined value in a zone by producing coating on a displaceable substrate in a vacuum chamber with the aid of a residual gas using a sputtering device. Reactive depositing a coating on the substrate by adding a reactive component with a predetermined stoichiometric deficit in a zone of the sputtering device. Displacing the substrate with the deposited coating into the vicinity of a plasma source, which is located in the vacuum chamber at a predetermined distance from the sputtering device. The plasma action of the plasma source modifying the structure and/or stoichiometry of the coating, preferably by adding a predetermined quantity of the reactive component to reduce the optical loss of the coating.

Abstract: A target is provided opposite to a wafer mounted on in a vacuum chamber, and a magnet array body is disposed above the target. In the magnet array body, ring-shaped magnet arrays are arranged to generate annular magnetic fields in the circumferential direction of the wafer, and a sputtering film formation is performed by switching between the magnetic fields.

Abstract: A sputtering apparatus includes: a first cylindrical target unit, a second cylindrical target unit facing the first cylindrical target unit; a third cylindrical target unit facing the first cylindrical target unit and the second cylindrical target unit; a fourth cylindrical target unit facing the first cylindrical target unit, the second cylindrical target unit, and the third cylindrical target unit; and a power unit configured to provide power such that two of the first cylindrical target unit, the second cylindrical target unit, the third cylindrical target unit, and the fourth cylindrical target unit function as different electrodes.

Abstract: In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films.

Abstract: A sputtering system includes a chamber, a plurality of targets, and a substrate holder. The targets are disposed in the chamber. Each target includes a magnet unit disposed therein. The substrate holder is configured to support a substrate in the chamber. The magnet units are configured to generate a magnetic field between the targets. Each of the magnet units includes magnets disposed in two rows.

Abstract: A thin film deposition apparatus, a deposition method using the same, and a method of manufacturing an organic light-emitting display apparatus by using the apparatus are provided. A thin film deposition apparatus is provided that includes a chamber containing a substrate holder on which a substrate is mounted, a plurality of rotary shaft units that change rotation and an inclination angle of the substrate holder, and a target unit that supplies a thin film material for formation on the substrate.

Abstract: A deposition apparatus may include a first substrate mounting member and a second substrate mounting member that may overlap the first substrate mounting member. The deposition apparatus may further include a sputter unit disposed in a space located between the first substrate mounting member and the second substrate mounting member. The sputter unit may have a first opening and a second opening. The first opening may be disposed closer to the first substrate mounting member than the second opening. The second opening may be disposed closer to the second substrate mounting member than the first opening. A first set of material and a second set of material may be simultaneously provided through the first opening and the second opening, respectively.

Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.

Abstract: A deposition apparatus for depositing a layer of deposition material on a substrate is provided. The apparatus includes a substrate support adapted for holding the substrate; a target support (520) adapted for holding a target assembly. The target assembly includes a backing element and at least two target elements (510, 511) arranged on the backing element next to each other so that a gap (530) is formed between the at least two target elements. The gap between the target elements is to have a width (w). Further, the substrate support and the target support are arranged with respect to each other so that the ratio of distance between substrate and target (570) element to the gap width (w) is about 150 and greater.

Abstract: There is provided a system and method for sputtering a tensile silicon nitride film. More specifically, in one embodiment, there is provided a method comprising introducing nitrogen gas into a process chamber, wherein the process chamber includes a target comprising silicon, placing the process chamber into a transition region between a metallic region and a poisoned region, and applying a voltage to the target.

Abstract: The subject of the invention is an essentially ceramic target for a sputtering device, especially for magnetically enhanced sputtering, said target comprising predominantly nickel oxide, the nickel oxide NiOx being oxygen-deficient with respect to the stoichiometric composition.

Abstract: Method for the coating of a substrate (S) in a process chamber (3), in which a gas atmosphere is set up and maintained in the process chamber (3) and an anode (6, 61) and a cylindrical vaporization cathode (2, 21, 22) formed as a target (2, 21, 22) are provided in the process chamber (3). The cylindrical vaporization cathode (2, 21, 22) includes the target material (200, 201, 202) and the target material (200, 201, 202) of the cylindrical cathode (2, 21, 22) is transferred into a vapor phase by means of an electrical source of energy (7, 71, 72).

Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

Abstract: Coating method for arc coating or arc ion plating coating of substrates in a vacuum chamber in which using an arc evaporator solid material that functions as cathode is evaporated, during arc evaporation the motion of the cathode spot on the solid material surface is accelerated using a magnetic field for avoiding ejection of a large amount of macro-particles or droplets from the solid material surface, negative charged particles resulted from the arc evaporation flow from the cathode to an anode, characterized by the motion of the negative charged particles from the cathode to the anode fundamentally doesn't cause an additional increase of the absolute value of the potential difference between cathode and anode allowing a lower increment of the substrate temperature during coating.

Abstract: The invention relates to a HiPIMS method by means of which homogeneous layers can be deposited over the height of a coating chamber. Two partial cathodes are used for said purpose. According to the invention, the length of the individual power pulse intervals applied to the partial cathodes is chosen individually and thus a required coating thickness profile over the height of the coating chamber is achieved.

Abstract: The innovation process describes the process and results for fabrication of a magnetron sputter deposited fully dense electrolyte layer (8YSZ/GDC/LSGM) embedded in a high performance membrane electrolyte assembly (MEA) (Unit Cell) of Solid Oxide Fuel Cell. A single cell with airtight electrolyte layer (8YSZ/GDC/LSGM) is prepared via thin film technique of magnetron sputter deposition, combined with SOFC-MEA processing methods (such as tape casting, lamination, vacuum hot pressing, screen printing, spin coating, and plasma spray coating) and sintering optimization conditions. The gas permeability of the electrolyte layer is below 1×10?6 L/cm2/sec and the open circuit voltage/power density of the single cell performance test exceeds 1.0 V and 500 mW/cm2.

Abstract: The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.

Abstract: A non-axisymmetric electromagnet coil used in plasma processing in which at least one electromagnet coil is not symmetric with the central axis of the plasma processing chamber with which it is used but is symmetric with an axis offset from the central axis. When placed radially outside of an RF coil, it may reduce the azimuthal asymmetry in the plasma produced by the RF coil. Axisymmetric magnet arrays may include additional axisymmetric electromagnet coils. One axisymmetric coil is advantageously placed radially inside of the non-axisymmetric coil to carry opposed currents. The multiple electromagnet coils may be embedded in a molded encapsulant having a central bore about a central axis providing the axisymmetry of the coils.

Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10? cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

Abstract: The present invention discloses an improved method of LED reflector manufacturing process where the method includes providing a substrate, wherein said substrate comprises a reflector unit, and a Light Emitting Diode; providing a shield member with ferromagnetic property; placing said shield member over the desired area of over the substrate; providing a magnet where said shield member is attracted to; placing said magnet immediately below the substrate wherein said magnet is capable of immobilizing the shield member over the substrate; performing a vacuum deposition coating; and removing the magnet and the shield member.

Abstract: An amorphous metal thin-film non-linear resistor (AMNR) is provided. The AMNR is an electronic device possessing symmetric non-linear current-voltage (I-V) characteristics, an exemplary configuration of which may comprise three sequentially deposited layers which include a lower amorphous metal thin-film (AMTF) interconnect, a thin-film insulator located on top of the AMTF interconnect, and two upper conductive contacts located on top of the insulator and disposed in the same physical plane.

Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cahode.

Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. The transport system defines a path of substrate travel extending through the coater. The transport system is adapted for conveying the substrate along the path of substrate travel. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. The preferred side support bounds at least one passage through which coating material passes when such coating material is deposited onto the substrate's rear major surface. Preferably, the coater includes at least one coating apparatus (e.g.