Abstract: A processing apparatus includes a supply source including a first supply source and a second supply source arranged to respectively face a first surface of a substrate and a second surface on an opposite side of the first surface. The supply source is configured to supply a material to apply a process to the substrate. A shield member includes a first shield provided around the first supply source and a second shield provided around the second supply source, the first shield and the second shield being arranged to sandwich the substrate. A moving device is configured to move the first shield and the second shield to set one of a close state in which the first shield and the second shield are close to each other and a separate state in which the first shield and the second shield are separate from each other.

Abstract: One embodiment is directed to a plasma source comprising a body in which a cavity is formed and at least two self-contained magnetron assemblies disposed within the cavity. The magnetron assemblies are mutually electrically isolated from each other and from the body. In one implementation of such an embodiment, the self-contained magnetron assemblies comprise closed-drift magnetron assemblies. Other embodiments are disclosed.

Abstract: Methods for processing substrates are provided herein. In some embodiments, a method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, may include disposing a substrate on the electrostatic chuck; providing a process gas to the processing region; igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck; and depositing target material on the substrate to form a first barrier layer while no chucking voltage is provided, wherein the target material is sputtered from the target via the plasma.

Abstract: A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0<x?0.6, and 1.0?y?2.0. The p-type metal oxide semiconductor material can be applied in a transistor. The transistor may include a gate electrode, a channel layer separated from the gate electrode by a gate insulation layer, and a source electrode and a drain electrode contacting two sides of the channel layer, wherein the channel layer is the p-type metal oxide semiconductor material.

Abstract: Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided.

Abstract: A method includes forming a dummy gate stack over a semiconductor substrate, wherein the semiconductor substrate is comprised in a wafer. The method further includes removing the dummy gate stack to form a recess, forming a gate dielectric layer in the recess, and forming a metal layer in the recess. The metal layer is over the gate dielectric layer. The formation of the metal layer includes placing the wafer against a target, applying a DC power to the target, and applying an RF power to the target, wherein the DC power and the RF power are applied simultaneously. A remaining portion of the recess is then filled with metallic materials, wherein the metallic materials are overlying the metal layer.

Abstract: Sputter deposition systems and methods for depositing film coatings on one or more substrates are disclosed. The systems and methods are used to prevent or reduce an amount of defects within a deposited film. The methods involve removing defect-related particles that are formed during a deposition process from certain regions of the sputter deposition system and preventing the defect-related particles from detrimentally affecting the quality of the deposited film. In particular embodiments, methods involve creating a flow of gas from a deposition region to a particle collection region the sputter deposition system such that the defect-related particles are entrained within the flow of gas and away from the deposition region. In particular embodiments, the sputter deposition system is a meta-mode sputter deposition system.

Abstract: A racetrack-shaped magnetic-field-generating apparatus for magnetron sputtering having a linear portion and corner portions, which comprises a center magnetic pole member; a peripheral magnetic pole member surrounding the center magnetic pole member; pluralities of permanent magnets arranged between the center magnetic pole member and the peripheral magnetic pole member to have magnetic poles aligned in one direction; and a non-magnetic base member supporting them; permanent magnets arranged in at least the linear portion being inclined with their surfaces on the side of the center magnetic pole member lower, and with their outside magnetic pole surfaces not in contact with the peripheral magnetic pole member in lower portions; the distance between the center magnetic pole member and the target being the same as the distance between the peripheral magnetic pole member and the target, thereby generating a uniform magnetic field on a target surface.

Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.

Abstract: Multi-component sputtering target structures suitable for deposition of metallic alloy films are provided. The multi-component target may be formed by winding wires of different materials around a target support structure to form a dense winding. The sputtering target structures and methods of the invention can be used to produce a variety of refractory metal alloy films.

Abstract: One embodiment is directed to a plasma source comprising a body in which a cavity is formed and at least two self-contained magnetron assemblies disposed within the cavity. The magnetron assemblies are mutually electrically isolated from each other and from the body. In one implementation of such an embodiment, the self-contained magnetron assemblies comprise closed-drift magnetron assemblies. Other embodiments are disclosed.

Abstract: Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

Abstract: An electrode includes a conductive substrate and a plurality of conductive structures providing a compressible matrix of material. An active material is formed in contact with the plurality of conductive structures. The active material includes a volumetrically expanding material which expands during ion diffusion such that the plurality of conductive structures provides support for the active material and compensates for volumetric expansion of the active material to prevent damage to the active material.

Abstract: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.

Abstract: A vapor deposition device has a plurality of moving plates between the cooling plate and moving vapor deposition source is controlled by the blowout panel. Moreover, when the vapor deposition materials absorbed by the blowout panel are up to the predetermined value, the moving plates are rotated around their axis simultaneously by the linkage to form a new blowout panel for performing the subsequent vapor deposition process. Consequently, the adsorption ability of the blowout board is greatly improved, and the crack and peeling off of the blowout panel caused by absorbing too many vapor deposition materials are avoided. Hence, the volume production of the evaporative coating equipment is improved.

Abstract: Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power.

Abstract: A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.

Abstract: An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

Abstract: A separated target apparatus includes a base plate; and a plurality of source units including a plurality of separated targets that are adhered on one surface of the base plate and that form a regular array, and a plurality of magnets that are adhered on the other surface of the base plate and that make a pair with the plurality of separated targets. The plurality of source units are arrayed in parallel at an angle between a first direction that is a direction of the regular array and a second direction that is perpendicular to the first direction. Sputtering is performed by using the separated target apparatus having the aforementioned structure.

Abstract: A repeller structure comprises a target member configured to be sputtered by a plasma to emit given ions, and provided with a through-hole penetrating between a sputterable surface and a reverse surface thereof, and a repeller body which supports the target member while being inserted in the through-hole of the target member, and has a repeller surface exposed on the side of the sputterable surface through the through-hole. The target member is made of a material selected from the group consisting of gallium oxide, gallium nitride, gallium phosphide, gallium arsenide and gallium fluoride.

Abstract: Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.

Abstract: A sputtering apparatus for depositing a material on a substrate through a sputtering process includes a vacuum chamber, a target positioned in the vacuum chamber and capable of sputtering a material to be deposited, a first plate attached for a substrate to be coupled thereto or decoupled therefrom and installed to be rotated in the vacuum chamber for the substrate to face the target, and a second plate installed to be rotated in the vacuum chamber to face the target.

Abstract: Methods for depositing layers on substrates are provided herein. In some embodiments, a method of forming a layer on a substrate having at least one feature disposed therein includes forming a conformal layer on an upper surface of the substrate and within the at least one feature by sputtering a target material using a first plasma that reduces the surface energy of the target material such that the sputtered target material wets the upper surface of the substrate and the at least one feature to form the conformal layer; and filling at least a portion of the at least one feature by sputtering the target material using a second plasma different from the first plasma to increase the surface energy of the sputtered target material and the conformal layer such that at least portions of the conformal layer are pulled into the at least one feature by capillary action.

Abstract: A method of manufacturing an organic light-emitting display apparatus includes: disposing an organic layer deposition apparatus to be apart from a substrate by a set distance; and depositing deposition material on the substrate while the organic layer deposition apparatus or the substrate is moved relative to the other, the deposition source apparatus including: a deposition source including a first deposition source and a second deposition source stacked on the first deposition source; a deposition source nozzle unit including a second deposition source nozzle unit at a side of the second deposition source to face the substrate and including a plurality of second deposition source nozzles, and a first deposition source nozzle unit at the side of the second deposition source to face the substrate and including a plurality of first deposition source nozzles formed to pass through the second deposition source; and a patterning slit sheet smaller than the substrate.

Abstract: A non-adhesive sputtering structure includes a sputtering target having a plate shape; and a backing plate having a plate shape. The backing plate faces the sputtering target, and facing surfaces of the sputtering target and the backing plate are in contact with each other. The backing plate includes a body having a longitudinal axis; and a cooling member through which a cooling material flows in a longitudinal direction of the body substantially parallel to the longitudinal axis. The cooling material conducts heat generated from the sputtering target from sputtering to outside the backing plate. The non-adhesive sputtering structure further includes a plurality of non-adhesive fastening members which maintain the facing surfaces of the backing plate and the sputtering target in contact with each other. The non-adhesive fastening members are extended through a thickness of the backing plate and correspond to regions of the backing plate excluding the cooling member.

Abstract: The inventors of this invention conducted a test and found out that to prevent peel-off of an adherent film, it is not of essential importance to set the radius of curvature equal to or larger than a predetermined threshold. The inventors of the present invention also found out that peel-off of an adherent film occurs in the region in which the curvature of a shield changes and is less likely to occur when the change in curvature of the shield is small. Accordingly, the key to the problem is the magnitude of a change in curvature of the shield, so changing the curvature stepwise makes it possible to suppress a large change in curvature, and thus to prevent peel-off of an adherent film free from any disadvantages such as deterioration in film thickness distribution, which may occur due to an increase in size of the shield.

Abstract: In a method of doping or of coloring ceramic, glass ceramic or glass, the ceramic, the glass ceramic or the glass is provided as granular material and this granular material is brought into contact with a solution which contains metal ions and/or metal complexes. This method is used in particular in the production of shaped bodies that consist at least partly of the mentioned materials. In this way, preferably a shaped body of dental ceramic is produced.

Abstract: In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.

Abstract: The invention refers to a coating device for the deposition of thin films on large area substrates comprising a process chamber, an electrode arrangement within the process chamber (2) which is adapted for generating a plasma adjacent to the electrode arrangement (4) at at least two opposing sides of the electrode arrangement, and at least two substrate holders for supporting at least two substrates (5,6) in substrate positions on opposing sides of the electrode arrangement, the electrode arrangement being located between the substrate positions and the substrates facing in the substrate positions the at least two plasma generated at the electrode arrangement, wherein the electrode arrangement comprises at least two cathodes arranged in a plane, the cathodes being able to generate a plasma at at least two sides of each cathode.

Abstract: An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate.

Abstract: To provide a target device that can easily be reused in which the amount of gas discharge is small. The present invention is a target device including a backing plate and a target plate that is fixed to the backing plate with a metal brazing material, in which a protective film made of a TiN thin film in which a proportion of (111) plane is at a maximum is formed on an exposed portion of the backing plate. The discharge amount of gas is small, and the brazing material that adheres when fixing the target plate can be easily peeled off.

Abstract: A sputtering target is provided that includes a planar backing plate and a target material formed over the planar backing plate and including an uneven sputtering surface including thick portions and thin portions and configured in conjunction with a sputtering apparatus such as a magnetron sputtering tool with a fixed magnet arrangement. The uneven surface is designed in conjunction with the magnetic fields that will be produced by the magnet arrangement such that the thicker target portions are positioned at locations where target erosion occurs at a high rate. Also provided is the magnetron sputtering system and a method for utilizing the target with uneven sputtering surface such that the thickness across the target to become more uniform in time as the target is used.

Abstract: Provided is a substrate processing apparatus including an openable and closable lid and being capable of precisely controlling a gap between multiple shields. The substrate processing apparatus includes: an openable and closable lid provided on an opening of a chamber; a first shield provided on a surface of the lid at the chamber side and having an insertion hole; an insertion section fixed to the lid while inserted through the insertion hole, and configured to support the first shield in a manner movable within a predetermined distance; a restriction section provided on an end portion of the insertion section and configured to restrict the movement of the first shield; and biasing means configured to bias the first shield to a member provided inside the chamber when the lid is closed.

Abstract: A vacuum processing apparatus includes a process chamber; a transport unit for transporting a plurality of substrates; a gas supply unit; a substrate processing unit for processing the substrates placed on the transport unit; a detection unit for detecting a substrate interval between adjacent substrates out of the plurality of substrates; and a control unit for controlling, based on the substrate interval detected by the detection unit, a supply amount of the gas to be supplied by the gas supply unit.

Abstract: The present invention provides a plate member conveying apparatus configured such that an occupied area is small, and a plate member is unlikely to be damaged. A plate member conveying apparatus according to the present invention includes a feed device having a conveying portion and a pressurizing portion. The conveying portion includes a belt configured to contact one of surfaces of a plate member in a vertical state to feed the plate member in a conveying direction. The pressurizing portion applies pressure of a fluid to the other surface of the plate member in the vertical state in a direction perpendicular to the surface of the plate member to press the plate member toward the belt. Then, the plate member in the vertical state is conveyed while being held by sandwiching the plate member between the belt of the conveying portion and the fluid of the pressurizing portion.

Abstract: Apparatus and method for physical vapor deposition are provided. In some embodiments, a cooling ring to cool a target in a physical vapor deposition chamber may include an annular body having a central opening; an inlet port coupled to the body; an outlet port coupled to the body; a coolant channel disposed in the body and having a first end coupled to the inlet port and a second end coupled to the outlet port; and a cap coupled to the body and substantially spanning the central opening, wherein the cap includes a center hole.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

Abstract: Systems and methods for tuning seed layer hardness in components of magnetic recording systems are described. One such system includes a substrate including a component of a magnetic recording system, a first deposition source configured to deposit a seed layer material on a portion of a top surface of the substrate at a first angle, and a second deposition source configured to deposit a carbon material including sp3 carbon bonds on the portion of the top surface at a second angle not equal to the first angle, where the first deposition source and the second deposition source deposit the seed layer material and the carbon material, respectively, simultaneously. The component can be a slider or a magnetic medium.

Abstract: One example embodiment may include a power supply system. The power supply system may include a main capacitor and a boost converter. The main capacitor is used to generate an electrical pulse. The boost converter is configured to be coupled to the main capacitor. Additionally, the boost converter includes a compensator supply including an energy storage capacitor that can store electrical energy. The boost converter also includes and a compensator inductor that receives the electrical energy from the compensator supply and is configured to supply electrical energy to the main capacitor when the main capacitor is generating the electrical pulse.

Abstract: Provided is a substrate processing apparatus including an openable and closable lid and being capable of precisely controlling a gap between multiple shields. The substrate processing apparatus includes: an openable and closable lid provided on an opening of a chamber; a first shield provided on a surface of the lid at the chamber side and having an insertion hole; an insertion section fixed to the lid while inserted through the insertion hole, and configured to support the first shield in a manner movable within a predetermined distance; a restriction section provided on an end portion of the insertion section and configured to restrict the movement of the first shield; and biasing means configured to bias the first shield to a member provided inside the chamber when the lid is closed.

Abstract: A separating device for process chambers arranged one after the other in a vacuum coating installation for coating two-dimensional substrates comprises a separating element which can be fitted between two process chambers transversely in relation to the transporting direction of the substrates. The element comprises a passage for the substrate that is arranged in the region of the transporting plane of the substrate and formed by at least one through-opening provided in the separating element, and includes at least one closure, optionally closing or opening the passage. An intermediate chamber formed by intermediate chamber outer walls is also provided and the separating element is arranged inside the intermediate chamber and the intermediate chamber is subdivided into two intermediate chamber segments. In this configuration, the separating device forms a chamber of its own, arranged between two neighboring process chambers.

Abstract: Provided is a physical vapor deposition apparatus with one or multiple deposition chambers for depositing films on substrates. The deposition chambers includes a heater and various cooling features to cool the chamber, the heater and the substrate. The sidewalls and top of the chamber are cooled by a cooling feature. The heater includes a cooling plate. A fitted heated cover is disposed between the heater and the substrate. A cooling pipe delivers a coolant throughout the cooling plate and extends in a high spatial density throughout the surface of the cooling plate. The cooling pipe occupies an area of about 14-20% of the area of the cooling plate and no location on the cooling plate surface is greater than about 15-20 mm from the cooling pipe. The cooling pipe cools the heater rapidly and enables deposition operations of long duration and using high power to be carried out.

Abstract: Methods for enabling or enhancing growth of carbon nanotubes on unconventional substrates. The method includes selecting an inactive substrate, which has surface properties that are not favorable to carbon nanotube growth. A surface of the inactive substrate is treated so as to increase a porosity of the same. CNTs are then grown on the surface having the increased porosity.

Abstract: A method for producing a transparent and conductive metal oxide layer on a substrate, includes atomizing at least one component of the metal oxide layer by highly ionized, high power pulsed magnetron sputtering to condense on the substrate. The pulses of the magnetron have a peak power density of more than 1.5 kW/cm2, the pulses of the magnetron have a duration of ?200 ?s, and the average increase in current density during ignition of the plasma within an interval, which is ?0.025 ms, is at least 106 A/(ms cm2).

Abstract: Methods and apparatus for applying pulsed DC power to a plasma processing chamber are disclosed. In some implementations, frequency of the applied power is varied to achieve desired processing effects such as deposition rate, arc rate, and film characteristics. In addition, a method and apparatus are disclosed that utilize a relatively high potential during a reverse-potential portion of a particular cycle to mitigate possible nodule formation on the target. The relative durations of the reverse-potential portion, a sputtering portion, and a recovery portion of the cycle are adjustable to effectuate desired processing effects.

Abstract: A method of depositing a layer of a material on a substrate is described. The method includes igniting a plasma of a sputter target for material deposition while the substrate is not exposed to the plasma, maintaining the plasma at least until exposure of the substrate to the plasma for deposition of the material on the substrate, exposing the substrate to the plasma by moving at least one of the plasma and the substrate, and depositing the material on the substrate, wherein the substrate is positioned for a static deposition process.

Abstract: In various embodiments, tubular sputtering targets comprising molybdenum are provided and sputtered to produce thin films comprising molybdenum. The sputtering targets may be formed by forming a tubular billet having an inner diameter IDI and an outer diameter ODI, the formation comprising pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet having an outer diameter ODf smaller than ODI, and heat treating the worked billet. The sputtering targets may have a substantially uniform texture of (a) a 110 orientation parallel to a longitudinal direction and (b) a 111 orientation parallel to a radial direction.

Abstract: Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.

Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

Abstract: A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 ?m.