Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided. A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin.

Abstract: A communication device includes a display device, a phase tuning layer, and a mmWave (Millimeter Wave) module. The display device includes a first display portion and a second display portion. The pixel density of the first display portion is greater than that of the second display portion. The phase tuning layer is adjacent to the second display portion. The mmWave module generates a wireless signal. The wireless signal is propagated through the second display portion and the phase tuning layer.

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract: Discussed is a display device, including a substrate, a substrate electrode disposed on the substrate, a magnetic portion disposed and having a magnetic property on an upper surface of the substrate, and a plurality of light-emitting devices respectively disposed on the magnetic portion, wherein the each of the plurality of light-emitting devices includes a magnetic electrode forming an attractive force with the magnetic portion.

Abstract: An organic light-emitting device includes an auxiliary layer located between a first electrode and a hole injection layer or a hole transport layer and including a metal fluoride. The metal of the metal fluoride may be a Group III metal having a high work function of 3.8 eV or more. The hole injection barrier at the interface between the first electrode and the hole injection layer may be adjusted by the fluoride of the high work function metal in the auxiliary layer so that the electron-hole charge balance and the efficiency of the organic light-emitting device may be improved.

Abstract: A display panel, a display device, and a control method are provided. The display panel includes: a substrate; a group of light-emitting devices located at a side of the substrate and comprising a first light-emitting device and a second light-emitting device that is disposed at least partially surrounding the first light-emitting device; a driving circuit comprising a first driving circuit for driving the first light-emitting device and a second driving circuit for driving the second light-emitting device; and a shielding part located at a side of the group of light-emitting devices away from the substrate, wherein an orthographic projection of the shielding part on the substrate is at least partially overlapped with an orthographic projection of the second light-emitting device on the substrate. The embodiments of the present application can not only achieve privacy protection, but also improve a display effect of the display device under a front viewing angle.

Abstract: The present disclosure provides a transistor device, a manufacturing method thereof, a display substrate and a display device. The transistor device includes a base substrate, as well as a first transistor and a second transistor that are disposed on the base substrate. The first transistor includes a first active layer. The second transistor includes a second gate. The first active layer and the second gate are disposed in the same layer.

Abstract: A light-emitting display device includes: a substrate including a first region and a second region spaced apart from each other, a first lower electrode at the first region, a second lower electrode at the second region, a first light-emitting layer having a first dopant on the first lower electrode of the first region, a second light-emitting layer on the second lower electrode of the second region, the second light-emitting layer having a second dopant different form the first dopant, the second light-emitting layer being configured to emit a light of a same color as that of the first light-emitting layer, and a common electrode on the first and second light-emitting layers, over the first and second regions.

Abstract: A display device includes a plurality of signal lines disposed on the upper surface of the first substrate and electrically connected to the display unit, a plurality of link lines disposed below the first substrate, and a plurality of side lines which is disposed on a side surface of the first substrate and connecting the plurality of signal lines and the plurality of link lines, and each of the plurality of side lines includes a first conductive layer which is disposed on the side surface of the first substrate and is formed of first conductive particles and a second conductive layer which covers the first conductive layer and is formed of second conductive particles having a particle size larger than that of the first conductive particles. Accordingly, the contact resistance of the side line is lowered and the mechanical property is improved while minimizing a bezel area.

Abstract: A method of producing a light source device includes providing a light emitting device having a substrate including a base member that includes a bottom surface and a recess. The substrate further including a wiring portion in the recess. The method further including providing a support substrate having a support base member, a first wiring pattern on a top surface of the support base member and including a joining region, and an insulating region, and applying a solder member such that the solder member on the insulating region has a volume larger than that of the solder member on the joining region. The light emitting device is placed on the support substrate while the solder member is separate from a portion of the wiring portion positioned in the vicinity of the bottom surface and the wiring portion is joined to the joining region.

Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semi

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: A light emitting device includes first and second electrodes disposed on a substrate and spaced apart from each other; at least one light emitting diode disposed between the first and second electrodes; an insulating pattern overlapping an upper portion of the at least one light emitting diode and exposing first and second ends of the at least one light emitting diode; a first contact electrode electrically connecting the first end of the at least one light emitting diode to the first electrode; and a second contact electrode electrically connecting the second end of the at least one light emitting diode to the second electrode. The insulating pattern may completely overlap the first and second ends of the at least one light emitting diode in a plan view, and have a width reducing toward a lower portion of the insulating pattern.

Abstract: A light emitting device including a blue light emitting portion configured to emit blue light, a green light emitting portion configured to emit green light, a red light emitting portion configured to emit red light, in which the blue light emitting portion include a first near-UV light emitting diode chip and a first wavelength conversion portion for wavelength conversion of near-UV light emitted from the first near-UV light emitting diode chip, blue light emitted from the blue light emitting portion includes a first peak wavelength in a wavelength band corresponding to near-UV light and a second peak wavelength in a wavelength band corresponding to blue light, and an intensity of the first peak wavelength is in a range of 0% to 20% of intensity of the second peak wavelength.

Abstract: Disclosed are a display substrate, a manufacturing method thereof, a display panel and a display device. The display panel comprises: a base substrate provided with a first area and a second area which are not overlapped with each other; a low temperature poly-silicon transistor arranged in the first area, the low temperature poly-silicon transistor comprises a poly-silicon active layer; an oxide transistor arranged in the second area, the oxide transistor comprises a first gate electrode; the first gate electrode is arranged in a same layer as the poly-silicon active layer, and a material of the first gate electrode is heavily-doped poly-silicon.

Abstract: [Object] To make it possible to improve viewing angle characteristics more. [Solution] Provided is a display device including: a plurality of light emitting sections formed on a substrate; and a color filter provided on the light emitting section to correspond to each of the plurality of light emitting sections. The light emitting sections and the color filters are arranged such that, in at least a partial region in a display surface, a relative misalignment between a center of a luminescence surface of the light emitting section and a center of the color filter corresponding to the light emitting section is created in a plane perpendicular to a stacking direction.

Abstract: Disclosed are a display device and a manufacturing method thereof. The display device includes a plurality of pixels, a light emitting device provided in each of the plurality of pixels, the light emitting device having a first surface and a second surface, which are opposite to each other, a first electrode electrically connected to the first surface of the light emitting device, a second electrode electrically connected to the second surface of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern is provided to cover a portion of the second surface and to expose a remaining portion of the second surface. The second electrode is electrically connected to the exposed remaining portion of the second surface, and the metal oxide pattern includes single-crystalline or polycrystalline alumina.

Abstract: A semiconductor device includes a first switching element, a second switching element, an optical coupling element, a plurality of leads and an outer resin member. The first switching element includes a first semiconductor chip and a first inner resin member sealing the first semiconductor chip. The second switching element includes a second semiconductor chip and a second inner resin member sealing the second semiconductor chip. The optical coupling element includes a light-emitting element, a light-receiving element and a third inner resin member sealing the light-emitting element and the light-receiving element. The first and second switching element and the optical coupling element are provided with terminals projecting from the first to third inner resin member, and the plurality of leads are electrically connected to the terminals. The outer resin member seals the first and second switching elements, the optical coupling element, and the plurality of leads.

Abstract: Provided are a transfer method, a display device, and a storage medium. The transfer method includes: performing partial cutting on preset scribe lines (22) on an epitaxial layer to obtain to-be-transferred wafers (24) after cutting (S1); adhering a temporary substrate (26) on the to-be-transferred wafers (24) through adhering a first release adhesive (25) to first side faces of the to-be-transferred wafers (24), and removing a growth substrate (21) (S2); adhering the to-be-transferred wafers (24) to the blue tape (28) through adhering a second release adhesive (27) to second side faces of the to-be-transferred wafers (24), and removing the temporary substrate (26) (S3); jacking up the blue tape (28) with a roller so that remaining scribe lines (23) on the to-be-transferred wafers (24) are separated by breaking under action of stress (S4).

Abstract: A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.

Abstract: Light-emitting devices with active electrical elements and light-emitting diodes (LEDs) are disclosed. LEDs may be mounted on an active electrical element such that the LEDs are within peripheral edges of the active electrical element. Contact pads may be arranged on the active electrical element for receiving external power and communication signals for active control of the LEDs. A light-transmissive carrier may be positioned over the active electrical element and the LEDs. Electrical traces of the carrier may be configured to electrically connect with the contact pads to route external power connections and communication signals for the active electrical element. Other electrical traces of the carrier may form a touch sensing element that is electrically coupled with the active electrical element. Active electrical elements with LEDs provided thereon may form compact sizes for use as active LED pixels configured for active-matrix addressing within an LED display.

Abstract: A method of manufacturing a nitride semiconductor device includes: forming a first semiconductor layer containing Al, Ga, and N and having a first thickness by doping a p-type impurity; forming a second semiconductor layer over the first semiconductor layer without doping an n-type impurity and without doping a p-type impurity, the second semiconductor layer containing Al and N and having a second thickness; and heat treating the first semiconductor layer and the second semiconductor layer. The second thickness is less than the first thickness. T band gap energy of the second semiconductor layer is greater than a band gap energy of the first semiconductor layer. After the heat treating of the first semiconductor layer and the second semiconductor layer, the second semiconductor layer contains the p-type impurity by diffusion of the p-type impurity from the first semiconductor layer.

Abstract: A sealing method includes dispensing an adhesive on an edge surface of a first part, performing a first activation for hardening the adhesive to a predetermined hardness, performing a second activation for triggering appearance of adhesion strength of the adhesive, assembling the first part and a second part, and pressing the first part and the second part against each other.

Abstract: Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

Abstract: A manufacturing method of a display device includes providing a first organic layer in a display area and a non-display area, to cover a pixel electrode and a pad electrode, respectively, providing a first electrode of a light emitting element, in the display area, the first organic layer being between the pixel electrode and the first electrode, after forming the first electrode, removing a portion of the first organic layer which is in the non-display area, to expose the pad electrode from the first organic layer; and providing a light emitting layer of the light emitting element, corresponding to the first electrode.

Abstract: Disclosed are a pixel circuit and a driving method thereof, an array substrate and a display apparatus. The pixel circuit includes a pixel sub-circuit. The pixel sub-circuit includes a first adjusting circuit and a second adjusting circuit. The first adjusting circuit is configured to receive a first data signal and a light emitting control signal to control a magnitude of a driving current used for driving a light emitting element to emit light; the second adjusting circuit is configured to receive a second data signal and a time control signal to control a time duration in which the driving current is applied to the light emitting element; and the time control signal changes within a time period during which the light emitting control signal allows the driving current to be generated.

Abstract: An organic light emitting device (OLED) that includes an anode, a cathode, and an organic layer disposed between the anode and the cathode. The organic layer includes a metal compound that comprises a ligand LA of Formula I, wherein the dashed lines represent coordination to a metal M. The metal M is selected from the groups consisting of Os, Ru, Ir, Rh, Pt, Pd, and Cu, and the metal is further coordinated to one or more ligand(s) LB, wherein the ligand(s) LB can be the same or different if more than one ligand LB is present. Optionally one or two of the ligand(s) LB can independently link to the ligand LA through one of R1 to R5. The invention is also directed to a consumer product that includes an OLED, and the OLED includes an organic layer that includes a metal compound that comprises a ligand LA of Formula I.

Abstract: A method for manufacturing an electronic device includes transferring a plurality of light emitting units from a carrier substrate to an object substrate through steps of: picking the plurality of light emitting units from the carrier substrate by a pick-and-place tool, and placing the plurality of light emitting units onto the object substrate. The steps are both performed under a protection by at least one electrostatic discharge protective unit.

Abstract: A light-emitting device includes: a substrate; a unit light-emitting area disposed on the substrate; first and second electrodes disposed in the unit light-emitting area to be separated from each other; a plurality of rod-shaped LEDs disposed between the first and second electrodes; a reflective contact electrode disposed on opposite ends of the rod-shaped LEDs to electrically connect the rod-shaped LEDs to the first and second electrodes; and a light-transmitting structure disposed between the first and second electrodes and extending to cross the rod-shaped LEDs.

Abstract: An array substrate, a display panel, and a method of fabricating an array substrate are provided. The array substrate includes a display region and a non-display region. The array substrate further includes a substrate, a first transparent layer disposed on the substrate corresponding to the display region, an interlayer insulating layer disposed on the substrate, and a second transparent layer disposed on the interlayer insulating layer.

Abstract: A transfer-printable (e.g., micro-transfer-printable) device source wafer comprises a growth substrate comprising a growth material, a plurality of device structures comprising one or more device materials different from the growth material, the device structures disposed on and laterally spaced apart over the growth substrate, each device structure comprising a device, and a patterned dissociation interface disposed between each device structure of the plurality of device structures and the growth substrate. The growth material is more transparent to a desired frequency of electromagnetic radiation than at least one of the one or more device materials. The patterned dissociation interface has one or more areas of relatively greater adhesion each defining an anchor between the growth substrate and a device structure of the plurality of device structures and one or more dissociated areas of relatively lesser adhesion between the growth substrate and the device structure of the plurality of device structures.

Abstract: An optoelectronic component is specified comprising a semiconductor body comprising a first semiconductor layer sequence and a second semiconductor layer sequence which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence has a first active region, which generates electromagnetic primary radiation with a first peak wavelength the second semiconductor layer sequence comprises a second active region, which has a section configured to partially absorb electromagnetic primary radiation and to re-emit electromagnetic secondary radiation having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.

Abstract: A display device includes a flexible substrate including a first surface and a second surface facing the first surface; a TFT array layer provided on the first surface; a display element layer provided on the TFT array layer; a first heat releasing layer provided on the second surface; a first protective layer provided on the same side as the second surface; a second heat releasing layer provided on the display element layer; and a second protective layer provided on the display element layer. The second heat releasing layer has a light transmittance of 90% or higher.

Abstract: A display apparatus includes a display panel having an image acquisition region within a display area, and an image acquisition device over a side of the display panel opposing to its display surface. The image acquisition device is at a position corresponding to the image acquisition region, and is configured to capture an image based on lights from an outside pattern over a side of the display panel proximal to the display surface. The display panel includes a substrate and a plurality of light-emitting elements over the substrate. The plurality of light-emitting elements comprises one or more first light-emitting elements positionally within the image acquisition region. At least one first light-emitting element includes a non-transparent electrode provided with at least one through-hole configured to allow the lights from the outside pattern to pass through the display panel.

Abstract: Provided are a heterocyclic compound and an organic light-emitting device including the same. The heterocyclic compound includes a fluoro-containing cyclic group. The heterocyclic compound does not include a carbazole group, a dibenzofuran group, a dibenzothiophene group, and/or a triphenylene group. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an organic layer, the organic layer including an emission layer and at least one of the heterocyclic compound.

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract: A display device that includes a plurality of pixels arranged in a row direction and a column direction crossing the row direction. The display device includes a first substrate including light-emitting elements each disposed in the respective pixels. A second substrate faces the first substrate. A plurality of optical patterns are disposed on the second substrate in pixel columns, respectively, and extend along the column direction. Light-blocking patterns are disposed on the second substrate. The light-blocking patterns include a main light-blocking pattern extending along pixel column boundaries and fill spaces between adjacent optical patterns, and a subsidiary light-blocking pattern disposed on the optical patterns at pixel row boundaries and having a thickness smaller than a thickness of the main light-blocking pattern.

Abstract: Provided are a display panel, a preparation method thereof and a display device. The display panel includes a light-emitting substrate and a color filter substrate; the color filter substrate includes: a substrate, a baffle wall layer and a reflective metal layer. The baffle wall layer is located on one side of the substrate and includes multiple baffle wall structures; the reflective metal layer includes a first reflective subsection covering a surface on a side, close to the light-emitting substrate, of the multiple baffle wall structures; the first reflective subsection includes multiple first metal subsections and multiple second metal subsections; and the multiple first metal subsections are independently disposed, and adjacent ones of the multiple second metal subsections along the first direction are connected to each other.

Abstract: The disclosure discloses an OLED element, a display panel, and a display device. The OLED element includes an anode, a light-emitting layer, a cathode stacked, and at least one of following components: an electric charge transfer and hole transmission component located between the anode and the light-emitting layer, where the electric charge transfer and hole transmission component includes a first light-induced electron transfer material and a hole transmission material; or an electric charge transfer and electron transmission component located between the cathode and the light-emitting layer, where the electric charge transfer and electron transmission component includes a second light-induced electron transfer material and an electron transmission material.

Abstract: The present disclosure provides a lighting device and a manufacturing method thereof. The lighting device of an embodiment includes a substrate, a light emitting unit and a light adjusting layer. The light emitting unit is disposed on the substrate, and the light emitting unit includes a light output surface. The light adjusting layer is disposed on the light emitting unit, and the light adjusting layer includes a first portion and a second portion connected to the first portion. Wherein, the first portion only partially covers the light output surface, and the second portion does not cover the light output surface.

Abstract: The present application provides a display panel including a light emitting layer and a touch layer; wherein the light emitting layer comprises a plurality of blue light emitting units, a plurality of green light emitting units, and a plurality of red light emitting units; wherein a top of the touch layer is provided with a transparent cover plate, the transparent cover plate is provided with a light enhancement region, and a projection of the light enhancement region on the light emitting layer covers the blue light emitting units.

Abstract: An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*1019 cm?3, and the p-contact layer is less than 100 nm thick.

Abstract: Semiconductor structures involving multiple quantum wells provide increased efficiency of UV and visible light emitting diodes (LEDs) and other emitter devices, particularly at high driving current. LEDs made with the new designs have reduced efficiency droop under high current injection and increased overall external quantum efficiency. The active region of the devices includes separation layers configured between the well layers, the one or more separation regions being configured to have a first mode to act as one or more barrier regions separating a plurality of carriers in a quantum confined mode in each of the quantum wells being provided on each side of the one or more separation layers and a second mode to cause spreading of the plurality of carriers across each of the quantum wells to increase an overlap integral of all of the plurality of carriers. The devices and methods of the invention provide improved efficiency for solid state lighting, including high efficiency ultraviolet LEDs.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. The light extraction layer includes: a plurality of cone-shaped parts formed in an array on the light extraction surface, and a plurality of granular parts formed both on a side part of the cone-shaped part and in a space between adjacent cone-shaped parts. A method of manufacturing the semiconductor light emitting device includes: forming a mask having an array pattern on the light extraction layer; and etching the mask and the light extraction layer from above the mask. The etching includes first dry-etching performed until an entirety of the mask is removed and second dry-etching performed to further dry-etch the light extraction layer after the mask is removed.

Abstract: Provided is an organic light emitting device including an anode; a cathode; and a light emitting layer provided between the anode and cathode, wherein an electron control layer provided between the light emitting layer and the cathode and including a compound of Chemical Formula 1: is included, and the light emitting layer includes a compound of Chemical Formula 3:

Abstract: A solar cell includes a silicon substrate, an emitter area formed on a front surface of the silicon substrate, a tunneling oxide layer formed on a back surface of the silicon substrate, a back surface field area formed on the tunneling oxide layer and formed of a polycrystalline silicon layer, a back passivation film formed on the back surface field area and having an opening, and a back electrode connected to the back surface field area via the opening.

Abstract: A display apparatus in which a thin film transistor includes an oxide semiconductor pattern is disclosed. A gate electrode of the thin film transistor can overlap a channel region of the oxide semiconductor pattern. The gate electrode can have a structure in which a hydrogen barrier layer and a low-resistance electrode layer are stacked. A light-emitting device and an encapsulating element can be sequentially stacked on the thin film transistor. A thickness of the hydrogen barrier layer can be determined by a content of hydrogen per unit area of the encapsulating element. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to hydrogen diffused from the encapsulating element can be prevented.

Abstract: A white LED and a method of repairing a light emitting device including, the method including colored light emitting diodes (LEDs) configured to emit different colors of light and arranged in pixels on a backplane of the device, the method including: determining whether each pixel is a functional pixel or a defective pixel; and repairing the defective pixels by transferring white LEDs to the backplane in each defective pixel.

Abstract: Provided is an element structure includes a heat dissipation member and a support member provided on the heat dissipation member. The support member includes a first mount material, a stress relaxation layer, and a second mount material in a stacking direction. The element structure further includes a functional element provided on the support member.