Abstract: Disclosed is a compound semiconductor device that includes an electron transit layer; an electron supply layer disposed above the electron transit layer, and including a first region and a second region, the second region having a composition higher in Al than the first region and covering the first region from at least a bottom part of the second region; a first electrode disposed above the first region; and a second electrode disposed above the second region.

Abstract: An embodiment comprises: a light emitting structure comprising a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a light transmissive conduction layer arranged on the second conductive type semiconductor layer. The light transmissive conduction layer comprises: a first conductive oxide layer arranged on the first conductive type semiconductor layer and comprising at least one first metal element and oxygen; and a second conductive oxide layer arranged on the first conductive oxide layer and comprising a compound consisting of the same metal element as the at least one first metal element, a second metal element, and oxygen.

Abstract: A light emitting module includes: a light emitting element unit including: a light-emitting element that has a main-light-emission surface, an electrode-formation surface and a side-surface, a light-transmissive member that covers the main-light-emission surface, and a first light-reflection member that covers the side-surface; a light-transmissive light guide plate including a first main-surface as a light emission surface, and a second main-surface opposed to the first main-surface and has a recess accommodating the light emitting element unit so that the first light-reflection member is partially arranged out of the recess in a cross-section; a light-transmissive interposition member that contacts an interior side-surface of the recess and an exterior side-surface of the light emitting element unit; and a second light-reflection member that partially covers the second main-surface and the interposition member.

Abstract: This invention discloses iridium complexes with ligands based on a phenyl quinoline backbone with at least a double substitution on the quinoline moiety. These complexes can be used as phosphorescent emitters in OLEDs.

Abstract: A lighting device includes a printed circuit board (PCB), a submount mounted on the PCB, a die mounted on the submount and including a plurality of light emitting devices, and a pad inserted into a hole formed in the submount such that the die and the PCB are electrically connected through the submount, connected to the die by a wire bonding, and electrically connected to the PCB.

Abstract: A display device includes a first substrate layer having a first, second, and third through holes spaced apart from each other; a second substrate layer having a fourth through hole; a first intermediate conductive layer having a first exposed portion exposed through the first through hole, and a second exposed portion exposed through the second through hole; a second intermediate conductive layer having a third exposed portion exposed through the third through hole; a wiring on the second substrate layer and electrically connected to the second intermediate conductive layer through the fourth through hole; a first electronic device on the first substrate layer and electrically connected to the first exposed portion; and a second electronic device on the first substrate layer and electrically connected to the second exposed portion and the third exposed portion.

Abstract: A light emitting diode includes an N-type semiconductor layer, a P-type semiconductor layer, and a light emitting layer. The P-type semiconductor layer is located on the N-type semiconductor layer. The light emitting layer is located between the N-type semiconductor layer and the P-type semiconductor layer. The N-type semiconductor layer has a first region and a second region connected to each other. The first region is overlapped with the light emitting layer and the P-type semiconductor layer in a first direction. The second region is not overlapped with the light emitting layer and the P-type semiconductor layer in the first direction. A sheet resistance of the P-type semiconductor layer is smaller than a sheet resistance of the N-type semiconductor layer.

Abstract: The light emitting diode display apparatus including a first substrate, a plurality of light emitting diodes, an adhesive layer, a color layer, and a second substrate is provided. The first substrate has a plurality of switching elements. The light emitting diode includes a first semiconductor layer, a plurality of second semiconductor layers, a plurality of light emitting layers, a first electrode, and a plurality of second electrodes. The first electrode is disposed on the first semiconductor layer. The second electrodes are respectively disposed on the corresponding second semiconductor layers. Each of the second electrodes is electrically connected to the corresponding switching element. The adhesive layer and the first substrate are respectively located at two opposite sides of the light emitting diode. The color layer is disposed on the first substrate and covers the adhesive layer and the light emitting diode. The second substrate is disposed opposite to the first substrate.

Abstract: Roughly described, an integrated circuit device includes a semiconductor having an overall length. In successively adjacent longitudinal sequence, the semiconductor includes first, second and third lengths all having a same first conductivity type. One end of the longitudinal sequence (the end adjacent to the first length) can be referred to a source end of the sequence, and the other end (adjacent to the third length) can be referred to as a drain end. Overlying the second length is a first gate conductor, which defines a first body region. Overlying a cascode portion of the third length is a second gate conductor, which defines a second body region. The second gate conductor preferably is longitudinally continuous with the first gate conductor, but if not, then the two are connected together by other conductors. The first body region is recessed relative to the first and third lengths of the semiconductor.

Abstract: An optical device is provided. The optical device includes a central region having a plurality of central pixels, a first region having a plurality of first pixels, a second region having a plurality of second pixels, an organic layer formed in the central region, the first region and the second region, a light collection layer surrounded by the organic layer formed in the first region and the second region, a first light collection element of the light collection layer formed in the first pixel, and a second light collection element of the light collection layer formed in the second pixel. The central region, the first region and the second region are spaced from each other along an arrangement direction, and the first region is closer to the central region than the second region. The first light collection element is different from the second light collection element.

Abstract: A semiconductor light-emitting device includes: a package substrate having a mounting surface on which a first circuit pattern and a second circuit pattern are disposed; a semiconductor LED chip mounted on the mounting surface, having a first surface which faces the mounting surface and on which a first electrode and a second electrode are disposed, a second surface opposing the first surface, and side surfaces located between the first surface and the second surface, the first electrode and the second electrode being connected to the first circuit pattern and the second circuit pattern, respectively; a wavelength conversion film disposed on the second surface; and a side surface inclined portion disposed on the side surfaces of the semiconductor LED chip, providing inclined surfaces, and including a light-transmitting resin containing a wavelength conversion material.

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate including a display area in which an OLED is formed and a non-display area surrounding the display area. The OLED display also includes a pixel defining layer formed over the substrate and having an opening defining an emission area of the OLED, a first passivation layer covering a portion of the pixel defining layer formed in the non-display area and a second passivation layer formed in the non-display area, wherein a portion of the second passivation layer does not overlap the first passivation layer in the depth dimension of the OLED display. The OLED display further includes an encapsulation substrate formed to be opposite to the substrate and a filler filling a space between the substrate and the encapsulation substrate and contacting the first and second passivation layers.

Abstract: A light emitting diode device with flip-chip structure includes a transparent protective substrate, a transparent conductor layer, a glue layer, a group III-V stack layer, a first conductivity metal electrode, a second conductivity metal electrode and an insulating layer. The transparent conductor layer is formed on the transparent protective substrate. The glue layer bonds the transparent protective substrate and the transparent conductor layer. The group III-V stack layer and the first conductivity metal electrode are respectively formed on a first portion and a second portion of the transparent conductor layer. The second conductivity metal electrode is formed on a portion of the group III-V stack layer. The insulating layer covers exposed portions of the transparent conductor layer and the group III-V stack layer, and the insulating layer further covers portions of the first and second conductivity metal electrodes, so as to expose the first and second conductivity metal electrodes.

Abstract: A standard direction (S) is a horizontal direction (a direction along X direction in the drawing). A base material (200) is supported by a frame body (250) so that a second surface (204) of the base material (200) is oriented obliquely upward from the standard direction (S). Thereby, a reference direction (R) is oriented obliquely upward from the standard direction (S). Light from the light-emitting system (20) has standard chromaticity in the standard direction (S). In addition, the light from the light-emitting system (20) has first chromaticity and second chromaticity in a first side direction (S1) and a second side direction (S2), respectively, the first side direction (S1) and the second side direction (S2) being symmetric with respect to the standard direction (S). A difference between the first chromaticity and the standard chromaticity is smaller than a difference between the second chromaticity and the standard chromaticity.

Abstract: Embodiments of the invention include an infrared-emitting phosphor comprising (La,Gd)3Ga5?x?yAlxSiO14:Cry, where 0?x?1 and 0.02?y?0.08. In some embodiments, the infrared-emitting phosphor is a calcium gallogermanate material. In some embodiments, the infrared-emitting phosphor is used with a second infrared-emitting phosphor. The second infrared-emitting phosphor is one or more chromium doped garnets of composition Gd3?x1Sc2?x2?yLux1+x2Ga3O12:Cry, where 0.02?x1?0.25, 0.05?x2?0.3 and 0.04?y?0.12.

Abstract: A silicon carbide epitaxial substrate has a silicon carbide single-crystal substrate and a silicon carbide layer. An average value of carrier concentration in the silicon carbide layer is not less than 1×1015 cm?3 and not more than 5×1016 cm?3. In-plane uniformity of the carrier concentration is not more than 2%. The second main surface has: a groove 80 extending in one direction along the second main surface, a width of the groove in the one direction being twice or more as large as a width thereof in a direction perpendicular to the one direction, and a maximum depth of the groove from the second main surface being not more than 10 nm; and a carrot defect. A value obtained by dividing a number of the carrot defects by a number of the grooves is not more than 1/500.

Abstract: A light emitting device including a light emitting element including an element substrate and semiconductor layers formed thereon, an encapsulating member that covers the sides of the light emitting element and forms a cavity at the upper surface of the light emitting element, and a wavelength-conversion layer in the cavity. The wavelength-conversion layer being capable of converting that converts the wavelength of light emitted by the light emitting element. The wavelength-conversion layer includes a first wavelength-conversion sub layer which is disposed at the upper surface of the light emitting element, and a second wavelength-conversion sub layer which is disposed on the first wavelength-conversion sub layer. The first wavelength-conversion sub layer includes first phosphors having a first resistance to environmental exposure, and the second wavelength-conversion sub layer includes second phosphors having a second resistance which is higher than that of the first wavelength-conversion sub layer.

Abstract: The present application provides a flexible display panel and a manufacturing method thereof. The flexible display panel includes a flexible substrate, a buffer layer formed on the flexible substrate, and a metal layer formed on the buffer layer. The flexible display panel includes a display area and a bending area in a lateral direction. The buffer layer includes a first portion and a second portion, the first portion corresponding to the display area, the second portion corresponding to the bending area, and the thickness of the second portion is less than the thickness of the first portion.

Abstract: A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.

Abstract: The disclosure provides an all-solution OLED device and a manufacturing method thereof. The manufacturing method fabricate a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode by solution film-forming. Compared with the manufacturing method of the existing OLED device, an all-solution fabrication of the electron transport layer and the cathode is achieved, the use of high vacuum evaporation process and equipment can be avoided, thereby saving materials and reducing manufacturing costs; and the adjacent layers will not appear mutual solubility, so the film quality is high and the device performance can be improved. The hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the cathode are all fabricated by solution film-forming; and compared with the existing OLED device, the manufacturing cost is low, the film-forming quality is high, and the display quality is excellent.

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

Abstract: Provided is a display substrate, a method for preparing the same, and a display device. The display substrate includes a plurality of display elements arranged on a base substrate and a heat dissipation layer arranged between the substrate and the plurality of display elements, in which an electrode of at least one of the plurality of display elements is connected to the heat dissipation layer via at least one heat conducting structure.

Abstract: A method for preparing a light emitting device comprising: disposing an electron-injection layer comprising a metal oxide on a cathode, disposing a first layer adjacent the electron-injection layer, the first layer comprising a small molecule material with a bandgap of at least about 3 eV capable of blocking holes, forming an emissive layer comprising quantum dots capable of emitting blue light upon excitation at a surface of the first layer opposite the electron-injection layer; disposing a second layer comprising a material capable of transporting holes and blocking electrons with a bandgap of at least about 3 eV adjacent a surface of the emissive layer opposite the first layer, and disposing an anode over the second layer. A light-emitting device is also disclosed.

Abstract: An electronic device includes a window having a modulus of about 55 GPa to about 80 GPa, an panel including an electronic element, and a plurality of adhesive layers between the window and the panel, wherein a sum of thicknesses of the adhesive layers is less than about 200 ?m, wherein the adhesive layers include a first adhesive layer contacting the panel, and a second adhesive layer contacting the window, and wherein a thickness of the first adhesive layer is equal to or less than about ½ of the sum of the thicknesses of the adhesive layers.

Abstract: An organic electronic device includes an organic device including an organic material, a first protective film on the organic device, a second protective film on the first protective film and including a same material as the first protective film, and a third protective film on the second protective film.

Abstract: A method for making a carbon nanotube field emitter is provided. At least one carbon nanotube wire and at least two electrodes are provided. The at least one carbon nanotube wire is heated to form at least one graphitized carbon nanotube wire. The at least one graphitized carbon nanotube wire comprises a first end and a second end, and the first end is opposite to the second end. The at least two electrodes are welded to fix the first end between the at least two electrodes. welding the at least two electrodes to fix the first end between the at least two electrodes. The second end of the at least one graphitized carbon nanotube wire is exposed from the at least two electrodes as an electron emission end.

Abstract: The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.

Abstract: An overvoltage protection device (100) may include a metal oxide varistor (MOV) (102) having a first surface (114) and a second surface (116); a semiconductor substrate (202) having a first outer surface (126) and a second outer surface (128) and comprising a semiconductor crowbar device (104) comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate (202) being disposed on a first side of the metal oxide varistor (102), a conductive region (124) disposed between the second surface (116) of the MOV (102) and the first outer surface (126) of the semiconductor substrate (202); a first electrical contact (120) disposed on the first surface (114) of the MOV (102); and a second electrical contact (122) disposed on the second outer surface (128) of the semiconductor substrate (202).

Abstract: A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

Abstract: A vortex polarizer converts light having azimuthal polarization emitted at a light emitting surface of a light emitting diode (LED) into a converted light having linear polarization. The vortex polarizer includes a distribution of fast axes that vary as a function of azimuth angle. Each fast axis rotates a portion of the light having the azimuthal polarization to a portion of the converted light having linear polarization. The vortex polarizer may include linear photoalignment polymer (LPP) aligned to define the distribution of fast axes.

Abstract: In one embodiment, an overvoltage protection device may include a metal oxide varistor (MOV) having a first surface and a second surface; a semiconductor substrate having a first outer surface and a second outer surface and comprising a semiconductor crowbar device comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate being disposed on a first side of the metal oxide varistor; a conductive region disposed between the second surface of the MOV and the first outer surface of the semiconductor substrate; a first electrical contact disposed on the first surface of the MOV; and a second electrical contact disposed on the second outer surface of the semiconductor substrate.

Abstract: A color conversion panel includes a substrate and a red color conversion layer, a green color conversion layer, and a transmission layer which are disposed on the substrate. The transmission layer includes at least one of a pigment and a dye.

Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and

Abstract: A tandem solar cell structure is described with the following features: (a) Monolithic configuration with at least two different absorbers (104, 108) of different materials for photovoltaic energy conversion (b) an absorber (108) consisting of crystalline silicon (c) a charge carrier selective contact arranged on the side of the silicon absorber (108) directed to the adjacent absorber (104) (d) configuration of the charge carrier selective contact from a thin interface oxide 107 and an amorphous, partially crystalline or polycrystalline layer applied thereto, mainly consisting of silicon, either p (106) or n doped (201) The charge carrier selective contact made up of layers 107 and 106 or 201, respectively, ensures excellent surface passivation of the crystalline silicon absorber 108, as well as selective extraction of a charge carrier type from the latter over the entire surface. Thus, a vertical current flow is achieved, so that lateral transverse conductivity is not required in every sub-cell.

Abstract: In view of the problem that a reduced thickness of an EL film causes a short circuit between an anode and a cathode and malfunction of a transistor, the invention provides a display device that has a light emitting element including an electrode and an electroluminescent layer, a wire electrically connected to the electrode of the light emitting element, a transistor provided with an active layer including a source, a drain and a channel forming region, and a power supply line electrically connected to one of the source and the drain of the transistor, wherein the wire is electrically connected to the other of the source and the drain of the transistor, and the width of a part of the electrode in the vicinity of a portion where the electrode is electrically connected to the wire is smaller than that of the electrode in the other portion.

Abstract: The present disclosure provides an OLED substrate and a display device. The OLED substrate includes a base substrate, and a thin-film transistor, a first electrode, and a light-emitting layer arranged in sequence on the base substrate, in which the OLED substrate further includes a light-shielding layer arranged between an active layer of the thin-film transistor and the first electrode.

Abstract: One embodiment relates to a light emitting device package having improved luminous flux, and a light emitting device package, according to one embodiment of the present invention, comprises: a light emitting device having an electrode pad arranged at a lower surface thereof; a wavelength conversion layer for covering four lateral surfaces of the light emitting device; a first reflective pattern for covering an upper surface of the light emitting device and three lateral surfaces of the light emitting device so as to expose the wavelength conversion layer of the one remaining lateral surface, which is a light emitting surface of the light emitting device; and a second reflective pattern arranged between the first reflective pattern and the upper surface of the light emitting device.

Abstract: A method of manufacturing a semiconductor element includes forming a first silicon oxide film on a semiconductor wafer under a first film forming condition; forming a second silicon oxide film on the first silicon oxide film under a second film forming condition, a density of the second silicon oxide film being lower than a density of the first silicon oxide film; coating, with a photoresist, a region including the second silicon oxide film; exposing the photoresist using a photomask having an aperture and being disposed such that at least a portion of an edge of the aperture is disposed on the second silicon oxide film; removing a portion of the photoresist to form a photoresist pattern that has an overhang shape in a cross-section of the photoresist pattern; forming an electrode film on a region including the photoresist pattern; and performing lift-off by removing the photoresist pattern.

Abstract: A metal layer is formed by vapor deposition or sputtering on an AlN substrate. Since there are irregularities on the surface of the substrate, irregularities are also formed on the surface of the metal layer. Subsequently, irregularities on the surface of the metal layer are removed and flattened in a mirror state by grinding the surface of the metal layer. Then, a dielectric layer is formed on the metal layer by alternately forming a SiO2 film and a TiO2 film through CVD. Next, an electrode layer is formed in a predetermined pattern by vapor deposition and lift-off on the dielectric layer. Since the surface of the metal layer is flattened in a mirror state, reflectance is high on that surface. As a result, the emission efficiency of the light-emitting device can be improved.

Abstract: A light-emitting diode chip includes a light-emitting epitaxial laminated layer including a first-type semiconductor layer, a second-type semiconductor layer, and an active layer therebetween, wherein the light-emitting epitaxial laminated layer has a first surface and an opposing second surface, and wherein the second surface is a light-emitting surface; a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer and having first geometric pattern arrays; a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer and having second geometric pattern arrays; and a transparent current spreading layer over a surface of the second electrical connection layer; wherein, when external power is connected, a horizontal resistance of a current passing through the transparent current spreading layer is less than a current passing through the second electrical connection layer.

Abstract: A method of manufacturing a light emitting device includes: a first wafer preparation step including preparing, on a first substrate, m first wafers (where m?2), each of the first wafers comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second wafer preparation step including bonding a second substrate with the second semiconductor layer of a first of the m first wafers and then removing the first substrate from the first wafer, so as to form a second wafer in which the first semiconductor layer is exposed; and a first bonding step including bonding the first semiconductor layer exposed at the surface of the second wafer and the second semiconductor layer of a second of the m first wafers together using a light-transmissive conductive layer, and then removing a first substrate of the second of the m first wafers.

Abstract: An array substrate, a liquid crystal display panel and a liquid crystal display apparatus are provided. The array substrate comprising first substrate; thin film transistor and data line are positioned on first substrate, data line electrically connecting with source or drain of thin film transistor; blocking element stacking positioned on thin film transistor; first shielding electrode and second shielding electrode located on lateral side of data line which away first substrate, vertical projections of first shielding electrode and second shielding electrode on first substrate are respectively covering data lines, thin film transistor positioned between first shielding electrode and second shielding electrode; transverse electrode connecting between first shielding electrode and second shielding electrode, transverse electrode located on lateral side of thin film transistor which away first substrate, and at least partial of transverse electrode is stacked positioned on blocking element.

Abstract: An electroluminescent display device includes a substrate, a circuit device layer provided on the substrate and having a first contact hole, a first electrode provided on the circuit device layer, a bank provided on the first electrode and configured to define a first emission area comprising a first sub emission area for exposing a first portion of the first electrode, and a second sub emission area for exposing a second portion of the first electrode, a first sub emission layer provided in the first sub emission area, and a second sub emission layer provided in the second sub emission area, wherein an area between the first sub emission area and the second sub emission area is overlapped with the first contact hole of the circuit device layer.

Abstract: The disclosure relates to a Vertical Cavity Surface Emitting Laser (100) comprising a first electrical contact (105), a substrate (110), a first Distributed Bragg Reflector (115), an active layer (120), a second Distributed Bragg Reflector (130) and a second electrical contact (135). The Vertical Cavity Surface Emitting Laser comprises at least two current aperture layers (125) arranged below or above the active layer (120), wherein each of the current aperture layers (125) comprises one AlyGa(1?y)As-layer, wherein a first current aperture layer (125a) of the at least two current aperture layers (125) is arranged nearer to the active layer (120) as a second current aperture layer (125b) of the at least two current aperture layers (125), wherein the first current aperture layer (125a) comprises a first current aperture (122a) with a bigger size as a second current aperture (122b) of the second current aperture layer (125b). The disclosure also relates to a method of manufacturing such a VCSEL (100).

Abstract: A light source unit disclosed in an embodiment of the invention includes: a first cover having an open region at an upper portion and a recess in which a lower portion is opened; a second cover coupled to the lower portion of the first cover; a light source module disposed between the first and second covers and having a circuit board and a light emitting device on the circuit board; a waterproof film disposed on the light emitting device and facing an upper surface of the circuit board; and first and second gaskets on the upper surface of the circuit board. The first cover and the second cover are coupled to each other by protrusions and grooves and are bonded to each other by a bonding portion.

Abstract: There is provided a light source device comprising a substrate; a semiconductor laser placed on the substrate; a side wall portion formed so as to surround the semiconductor laser; and a cover being translucent, configured to cover a space surrounded by the substrate and the side wall portion, wherein the side wall portion includes a lower surface connected to an upper surface of the substrate over a whole periphery, an upper surface connected to a lower surface of the cover over a whole periphery, and inner side surfaces inclined so that the space expands from a lower surface side to an upper surface side of the side wall portion, at least a part of the inner side surfaces serving as a reflection surface for reflecting a beam emitted from the semiconductor laser toward the cover, and a connecting portion where an upper surface of the substrate and a lower surface of the side wall portion are in contact with each other via a connecting layer is provided in a region corresponding to an upper surface of the sid

Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

Abstract: A light-emitting device includes a light-emitting element, a supporting structure, a first wavelength conversion structure, and a light-absorbing layer. The light-emitting element includes a plurality of active stacks separated from each other, a first-type semiconductor layer continuously arranged on the plurality of active stacks, and a plurality of second-type semiconductor layers under the plurality of active stacks. The supporting structure is disposed on the light-emitting element and includes a first opening. The first wavelength conversion structure disposed in the first opening. The light-absorbing layer disposed on the top surface of the supporting structure.

Abstract: A display device includes a circuit layer having a driving circuit layer with a plurality of clock signal lines, a touch detection unit having a touch detection part and a plurality of touch signal lines electrically connected to the touch detection unit, and a conductive portion disposed between the plurality of clock signal lines and the plurality of touch signal lines and configured to cover an overlapping area where the plurality of clock signal lines and the plurality of touch signal lines overlap.

Abstract: One embodiment provides a semiconductor device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and also comprises first and second recesses which pass through the active layer from the second conductive semiconductor layer and extend to the first conductive semiconductor layer; a first electrode coming into contact with the first conductive semiconductor layer from the first recess; a second electrode coming into contact with the second conductive semiconductor layer; and a reflective layer formed in the second recess, wherein the second recess has an open lower part disposed on the downside of the second conductive semiconductor layer, an upper part disposed on the first conductive semiconductor layer, and a side part extending from the lower part to the upper part, and the reflective layer comprises a reflection part disposed inside the second recess and an extension part extending from the lower part