Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.

Abstract: A CMOS image sensor with an imaging array of pixels containing selected pixels wherein illumination is blocked and light scattered from an adjacent pixel is collected. The signal from the selected pixels is resilient against saturation and thereby contributes to increased dynamic range of the imaging signal. The image sensor may be incorporated within a digital camera.

Abstract: An image sensor may include a pixel array having pixels arranged in rows and columns, column readout circuitry, and control circuitry. Column readout circuitry may include corresponding readout circuits each coupled to a corresponding column path for a respective column of pixels. The readout circuits may each include signal processing circuits such as correlated double sampling circuitry and analog-to-digital converter circuitry. To reduce peak-to-average power ratio, during the signal processing operations for each pixel row, the control circuitry may control the signal processing circuits to perform time-domain multiplexing across the pixel columns to activate the signal processing circuits at varied times within the row time. If desired, the pattern of time-domain multiplexing may be varied across the signal processing operations for different pixel rows and/or for different image frames.

Abstract: The present technology relates to a comparator that can easily modify operating point potential of the comparator, and an imaging device. A pixel signal output from a pixel, and, a reference signal with changeable voltage are input to a differential pair. A current mirror connected to the differential pair, and a voltage drop mechanism allowed to cause a predetermined voltage drop is connected between a transistor that configures the differential pair, and a transistor that configures the current mirror. A switch is connected in parallel to the voltage drop mechanism. The present technology can be applied, for example, to an image sensor that captures an image.

Abstract: An optical image stabilizer includes an electric circuit member, an image sensor, a driving member and a pressing member. The electric circuit member includes a fixed part, a movable part and a connection part. The fixed part surrounds the movable part. The connection part is connected to the fixed part and the movable part, and the movable part is movable through the connection part. The image sensor is electrically connected to the electric circuit member and disposed on the movable part. The driving member and the pressing member are coupled to the movable part to respectively move and keep the movable part. The connection part includes wire structures connected to and located between the fixed part and the movable part. The wire structures with pliability are connected to the movable part with no physical support. The wire structures each includes a circuit layer and an insulation layer stacked together.

Abstract: An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.

Abstract: An image sensor includes a color sensor chip configured to generate a color image by sensing visible light in incident light; a light transfer layer disposed under the color sensor chip, and including an infrared light pass filter which filters infrared light from light having passed through the color sensor chip; and a depth sensor chip disposed under the light transfer layer, and configured to generate a depth image by sensing the infrared light.

Abstract: An image processing device includes a vision sensor and a processor. The vision sensor generates a plurality of events in which an intensity of light changes and generates a plurality of timestamps depending on times when the events occur. In addition, the processor may regenerate a timestamp of a pixel where an abnormal event occurs, based on temporal correlation of the events.

Abstract: An event sensing system includes a pixel array including a plurality of event driven pixel circuits configured to be illuminated by incident light. The event driven pixel circuits are configured to generate an event current in response to a detection of an event in the incident light. Output signals of a row of the pixel array are configured to be read out from the row of the pixel array to a line buffer in response to the detection of the event in the incident light. A random number generator is configured to randomly generate a filtering mask. A mask circuit is the output signals of the row of the pixel array from the line buffer and the filtering mask from the random number generator to filter the output signals of the row of the pixel array in response to the filtering mask.

Abstract: An image capture device is described. The image capture device includes an array of pixels. Each pixel includes a 2×2 array of photodetectors. The image capture device also includes an array of 1×2 on chip lenses (OCLs) disposed over the array of pixels. For each pixel in the array of pixels, a respective pair of adjacent 1×2 OCLs is disposed over a pixel, with each respective pair of adjacent 1×2 OCLs including a respective first 1×2 OCL disposed over a first photodetector and a respective second photodetector in the 2×2 array of photodetectors for the pixel, and a second 1×2 OCL disposed over a third photodetector and a fourth photodetector in the 2×2 array of photodetectors for the pixel.

Abstract: A mask plate for fabricating a display panel and an application thereof are provided. The mask plate is configured to vapor-deposit a metal cathode layer of the display panel and includes a first blocking region and a first opening region disposed in the first blocking region, wherein a second blocking region is disposed in the first opening region, and the second blocking region is provided with a plurality of second opening regions spaced apart from each other.

Abstract: An imaging device including pixels including a first pixel and a second pixel, the pixels arranged in rows and columns, the first pixel belonging to a first column, the second pixel belonging to a second column adjacent the first column; a first signal path through which a signal from the first pixel flows; and a second signal path through which a signal from the second pixel flows, a first circuit including first and second lines, a first voltage being applied to the first lines, a second voltage different from the first voltage applied to the second lines. The first signal path is located in a region closer to one of the first lines than any of the second lines in a plan view, and the second signal path is located in a region closer to one of the second lines than any of the first lines in the plan view.

Abstract: An imaging device includes: a first image sensor comprising first pixels that receive incident light, and that include a first and second photoelectric conversion units that are arranged in a first direction; and a second image sensor including second pixels that receive light that has passed through the first image sensor, and that include a third and fourth photoelectric conversion units that are arranged in a second direction that is different from the first direction.

Abstract: An image sensor includes a dual conversion gain pixel to output a high conversion gain signal according to a high conversion gain and output a low conversion gain signal according to a low conversion gain, by adjusting a conversion gain; a scaler to scale a voltage level of the high conversion gain signal; a ramp generator to generate a first ramp signal and a second ramp signal, slopes of the first and second ramp signals being different from each other; a comparator to compare the scaled high conversion gain signal and the first ramp signal to output a first comparison result, and compare the low conversion gain signal and the second ramp signal to output a second comparison result; and a counter to output a first counting result value based on the first comparison result and output a second counting result value based on the second comparison result.

Abstract: An event driven pixel includes a photodiode configured to photogenerate charge in response to incident light received from an external scene. A photocurrent to voltage converter is coupled to the photodiode to convert photocurrent generated by the photodiode to a voltage. A filter amplifier is coupled to the photocurrent to voltage converter to generate a filtered and amplified signal in response to the voltage received from the photocurrent to voltage converter. A threshold comparison stage is coupled to the filter amplifier to compare the filtered and amplified signal received from the filter amplifier with thresholds to asynchronously detect events in the external scene in response to the incident light. A digital time stamp generator is coupled to asynchronously generate a digital time stamp in response to the events asynchronously detected in the external scene by the threshold comparison stage.

Abstract: Correlated double sampling column-level readout of an image sensor pixel may be provided by a charge transfer amplifier that is configured and operated to itself provide for both correlated-double-sampling and amplification of floating diffusion potentials read out from the pixel onto a column bus after reset of the floating diffusion (I) but before transferring photocharge to the floating diffusion (the reset potential) and (ii) after transferring photocharge to the floating diffusion (the transfer potential). A common capacitor of the charge transfer amplifier may sample both the reset potential and the transfer potential such that a change in potential (and corresponding charge change) on the capacitor represents the difference between the transfer potential and reset potential, and the magnitude of this change is amplified by the charge change being transferred between the common capacitor and a second capacitor selectively coupled to the common capacitor.

Abstract: A light sensor includes a photodiode, interlayer dielectric layer and plurality of metal layers. A polarizer is disposed in the plurality of metal layers. The photodiode is coupled to generate charge in response to incident light directed through a first side of the semiconductor layer. The polarizer includes a first metal grid formed with a first metal layer and a second metal grid formed with a third metal layer. The second metal grid is stacked with the first metal grid such that the first and second metal grids are disposed above and aligned with the photodiode. The photodiode is optically coupled to receive incident light through the first and second metal grids of the polarizer and through the first side of the semiconductor layer.

Abstract: There is provided a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

Abstract: A solid-state imaging device according to an embodiment includes: a semiconductor substrate including a photoelectric conversion element; a lens disposed above a first light incident surface of the photoelectric conversion element; and a plurality of columnar structures disposed on a surface parallel to the first light incident surface that is located between a second light incident surface of the lens and the first light incident surface of the photoelectric conversion element. The columnar structure includes at least one of silicon, germanium, gallium phosphide, aluminum oxide, cerium oxide, hafnium oxide, indium oxide, tin oxide, niobium pentoxide, magnesium oxide, tantalum pentoxide, titanium pentoxide, titanium oxide, tungsten oxide, yttrium oxide, zinc oxide, zirconia, cerium fluoride, gadolinium fluoride, lanthanum fluoride, and neodymium fluoride.

Abstract: An image sensor is provided. The image sensor includes a pixel array including first and second pixels, the first and second pixels receiving the same transfer gate signal and outputting first and second signal voltages, respectively, a transfer gate driver receiving first and second voltages and generating the transfer gate signal, the transfer gate signal having the first voltage as its maximum voltage and having the second voltage as its minimum voltage and a compensation module detecting a variation in the second voltage, generating a compensation voltage based on the variation in the second voltage, and performing a compensation operation.

Abstract: An image-capturing apparatus comprises a board configured to hold an image sensor, a holding member configured to hold an optical member so as to be insertable into and removable from an optical path, the holding member being held between a lens barrel and the image sensor, and a sealing member configured to surround a periphery of a light receiving surface of the image sensor, the sealing member being provided on a side of the image sensor with respect to the optical member, wherein the sealing member includes a first sealing portion which contact the board and a second sealing portion which contacts the holding member.

Abstract: In an imaging element in which a plurality of phase difference detection pixels and a plurality of normal pixels for imaging are two-dimensionally arranged in a horizontal direction and a vertical direction, the phase difference detection pixel includes a first phase difference pixel ZA and a second phase difference pixel ZB including opening portions for pupil separation at different positions in the horizontal direction. The first phase difference pixel ZA and the second phase difference pixel ZB are adjacently arranged to have the opening portions facing each other. RGB color filters are arranged in the plurality of normal pixels in the Bayer arrangement. The imaging element includes a normal pixel row in which only the normal pixel is arranged in the horizontal direction and a phase difference pixel row in which the first phase difference pixel ZA, the second phase difference pixel ZB, and one normal pixel are periodically arranged in the horizontal direction.

Abstract: The present disclosure relates to encoding of video image using coding parameters, which are adapted based on events related to motion within the video image. Image content is captured by a standard image sensor and an event-triggered sensor, providing an event-signal indicating changes (e.g. amount and time-spatial location) of image intensity. Objects are detected within the video image, based on the event signal assessing motion of the object, and their textures extracted. The spatial-time coding parameters of the video image are determined based on the location and strength of the event signal, and the extent to which the detected objects moves.

Abstract: The present technology relates to an imaging apparatus, a manufacturing apparatus, a manufacturing method, and an electronic appliance that contribute to miniaturization and thinning of an imaging apparatus. Provided is an imaging apparatus including a first circuit board in which an imaging element is mounted on a center portion, a component that is mounted on an outer circumference portion of the center portion of the first circuit board, and a member that incorporates the component and is provided in the outer circumference portion and is formed by a mold method. The imaging apparatus further includes a lens barrel that holds a lens, in which a frame that supports a portion including the lens barrel is located on the member. Further, the frame includes an infra red cut filter (IRCF). The present technology can be applied to an imaging apparatus.

Abstract: Described herein is an object recognition system in low illumination conditions. A 3D InIm system can be trained in the low illumination levels to classify 3D objects obtained under low illumination conditions. Regions of interest obtained from 3D reconstructed images are obtained by de-noising the 3D reconstructed image using total-variation regularization using an augmented Lagrange approach followed by face detection. The regions of interest are then inputted into a trained CNN. The CNN can be trained using 3D InIm reconstructed under low illumination after TV-denoising. The elemental images were obtained under various low illumination conditions having different SNRs. The CNN can effectively recognize the 3D reconstructed faces after TV-denoising.

Abstract: An image sensor device is provided to effectively improve the signal discrimination of sensed/sampled pixel values/signals in the image sensor device operating in a dark condition as well as effectively avoiding signal saturation when such image sensor device operates in a light/bright condition. Such image sensor device, when operating in dark/light conditions, can perform the exposure operation to get/sample accurate pixel image signal and pixel reset signal for only one time without estimating the pixel image signal and pixel reset signal by performing the exposure operation twice.

Abstract: The present technology relates to a reception device, a transmission device, a control method, a program, and a transmission and reception system capable of correcting a difference between data timings in respective communication links in a case where data is transmitted by using a plurality of communication links. The reception device according to the present technology executes processing for receiving data streams that have same data structures and are transmitted from a plurality of transmission units included in a transmission device by using a plurality of lanes in parallel and execute processing for integrating the received data streams into a single system data and acquiring a packet configuring the data stream and corrects a difference between corresponding pieces of data timings in respective communication links realized by each pair of the one transmission unit and the one reception unit. The present technology is applied to data transmission between chips.

Abstract: A semiconductor memory device includes a pixel array having pixels, a logic circuit configured to process a signal output by the pixels to generate image data, and sensor pads connected to the logic circuit, where the sensor pads include a first ground sensor pad, a second ground sensor pad, signal sensor pads disposed between the first ground sensor pad and the second ground sensor pad and configured to output the image data, and dummy sensor pads disposed between the first ground sensor pad and the second ground sensor pad and configured not to output the image data, and at least one of the dummy sensor pads is disposed between the signal sensor pads.

Abstract: A method and apparatus for capturing an image of at least one object appearing in a wide-angle field of view (FOV). A housing has an image sensor and a lens assembly fixedly mounted relative thereto. The lens assembly includes first and second lens groups, and a glass lens. The lens assembly and the image sensor are aligned such that light received within the FOV passes through a front aperture and the base lens assembly and impinges onto the image sensor. The light received from the FOV forms an original image prior to entering the front aperture and the lens assembly. Light from the FOV impinging onto the sensor forms an impinging image.

Abstract: A digital correlated double sampling circuit includes a first latch circuit, a second latch circuit, a decision circuit, a delay control circuit and a calculating circuit. The first latch circuit stores first reset component data. The second latch circuit stores second reset component data and stores image component data based on a selected comparison signal during an image interval. The decision circuit outputs a decision signal by determining identity of the first reset component data and the second reset component data during the reset interval. The delay control circuit outputs the reset comparison signal and outputs one of the first image comparison signal and the second comparison signal as the selected comparison signal. The calculating circuit generates effective image data by subtracting the second reset component data from the image component data and sequentially outputs the effective image data.

Abstract: The present technology relates to a comparator that can easily modify operating point potential of the comparator, and an imaging device. A pixel signal output from a pixel, and, a reference signal with changeable voltage are input to a differential pair. A current mirror connected to the differential pair, and a voltage drop mechanism allowed to cause a predetermined voltage drop is connected between a transistor that configures the differential pair, and a transistor that configures the current mirror. A switch is connected in parallel to the voltage drop mechanism. The present technology can be applied, for example, to an image sensor that captures an image.

Abstract: An image pickup apparatus for endoscope includes: an imager, an optical device, an optical module on which the optical device is mounted, an optical fiber optically coupled with the optical device, a ferrule having an insertion hole into which the optical fiber is inserted, and a wiring board including a first rigid board, a second rigid board and a flexible intermediate board. The ferrule is fixed to the second rigid board or a first principal surface of the optical module. A first side surface of the optical module is glued to the first rigid board, and the first principal surface is glued to the second rigid board.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes a light-receiving surface and a plurality of pixels arranged to face the light-receiving surface. Each of the pixels includes a photoelectric conversion section that photoelectrically converts light incident via the light-receiving surface, a charge-holding section that holds charges transferred from the photoelectric conversion section, a first potential barrier provided between the photoelectric conversion section and the charge-holding section, and a second potential barrier provided around a region including the photoelectric conversion section, the charge-holding section, and a first impurity semiconductor region. The first potential barrier is lower than the second potential barrier.

Abstract: An image capturing apparatus comprises an image sensor that outputs a first added signal and a first average partial signal amplified by a first gain, and a second added signal and a second averaged partial signal amplified by a second gain, a processing unit that generates a third added signal by synthesizing the first and second added signals with a first ratio and a third averaged partial signal by synthesizing the first and second averaged partial signals with a second or third ratio, a determination unit that determines the first ratio based on the first or second added signal and determines the second ratio based on the first ratios, and changes the second ratio of a pixel group that includes a pixel corresponding to the saturated first or second added signal to the third ratio, which is not based on the first ratio.

Abstract: An event driven sensor includes an arrangement of photodiodes including an inner portion laterally surrounded by an outer portion. An outer pixel cell circuit is coupled to generate an outer pixel value in response to photocurrent generated by the outer portion. The outer pixel value is a binned signal representative of an average value of brightness of incident light on the arrangement of photodiodes. An inner pixel cell circuit is coupled to the inner portion to generate an inner pixel value in response to photocurrent generated by from the inner portion. An event driven circuit is coupled to the outer pixel cell circuit and the inner pixel cell circuit. The event driven circuit is coupled to generate an output signal responsive to an inner brightness indicated by the inner pixel value relative to an outer brightness indicated by the outer pixel value.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: An electronic apparatus includes a screen and a camera assembly. By disposing the camera assembly under the screen and setting the structural size of the light transmitting portion smaller than the minimum resolution threshold of the naked eyes, the light transmitting portion on the screen is invisible to the naked eyes. The camera includes a plurality of photographing sections, and collects partial image data in the scene to be photographed by cooperation of each of the photographing sections with a light transmitting hole. The main control integrates all the partial image data, and finally produces an overall image of the scene to be photographed. As such, a photographing function of the camera assembly of the electronic apparatus can be ensured, and the screen-to-body ratio of the screen can be increased, without interference of the camera assembly with display effects of the screen.

Abstract: The present technique relates to a solid-state image pickup element and an electronic apparatus each of which enables a pad to be formed in a shallow position while reduction of a quality of a back side illumination type solid-state image pickup element is suppressed. The solid-state image pickup element includes a pixel substrate in which a light condensing layer for condensing incident light on a photoelectric conversion element, a semiconductor layer in which the photoelectric conversion element is formed, and a wiring layer in which a wiring and a pad for outside connection are formed are laminated on one another, and at least a part of a first surface of the pad is exposed through a through hole completely extending through the light condensing layer and the semiconductor layer. The present technique, for example, can be applied to a back side illumination type CMOS image sensor.

Abstract: A solid-state imaging element includes an insulating film layer, a first light blocking film, and a wiring layer that are stacked on a second face of a semiconductor substrate, on a side opposite to a first face on which light is incident. The first light blocking film covers at least a formation region of a charge retention section and has a protrusion section protruding on a side of the semiconductor substrate in a part corresponding to a formation position of the second light blocking film. The second light blocking film has a first light blocking section between a photoelectric conversion section and the charge retention section that extends partway through the semiconductor substrate, a second light blocking section between a photoelectric conversion section and the charge retention section, and a third light blocking section covering a part of the first face.

Abstract: The present disclosure relates to a sensor element and an electronic device that can further reduce noise. In a solid-state imaging apparatus that performs AD conversion in a pixel, a comparator circuit included in the pixel at least has: a comparing unit that compares a pixel signal output from a pixel circuit with a reference signal which is a slope signal whose level monotonously decreases with time; a band limiting unit that performs band limiting by narrowing a band of a signal that changes according to a result of comparison by the comparing unit; and an amplification unit that amplifies the signal whose band has been limited through the band limiting unit. The present technology can be applied to a solid-state imaging apparatus that performs AD conversion in a pixel, for example.

Abstract: An optical system includes a first lens having negative refractive power and having two concave surfaces, a second lens having positive refractive power, a third lens having refractive power, a fourth lens having refractive power, a fifth lens having refractive power, a sixth lens having refractive power, and a seventh lens having refractive power. The first to seventh lenses are sequentially disposed from an object side.

Abstract: A phosphor in glass (PiG) cover is provided to modulate the color emitted from an LED chip. The PiG cover includes an active layer including glass and phosphor, and a secondary layer including glass and free of phosphor. The active layer is stacked on the secondary layer to form the PiG cover. Alternately the PiG includes an active layer sandwiched between two secondary layers. Two or more active layers can be stacked to each other or disposed side-by-side. An LED chip is arranged under the PiG cover to form an LED package.

Abstract: Provided are an image sensor and an image processing device including the same. The image sensor includes: a pixel array including a plurality of pixels arranged in rows and columns and configured to generate pixel signals from the plurality of pixels, a time calculator configured to receive zoom information corresponding to digital zooming, and configured to calculate a row processing time available for processing the pixel signals from the plurality of pixels included in a single row based on the zoom information, a timing generator configured to generate at least one control signal based on the row processing time; and an Analog-to-Digital Converter (ADC) configured to generate pixel data by performing sampling on the pixel signals according to the at least one control signal.

Abstract: Techniques are described for implementing ramp voltage generators with current steering architectures that provide high power supply noise rejection. For example, a current steering architecture uses a sample and hold block and a driver block to control and drive a current steering network. Both generate signals that track supply voltage variations, and those signals are used to generate a ramp voltage. For image sensor applications, image tolerance to ramp noise can be very low when the ramp voltage is low, but can increase appreciably as the ramp voltage increases. As such, embodiments can be implemented to provide high PSR at low ramp voltages, even if the PSR degrades at higher ramp voltages, while maintaining high linearity over the entire ramp voltage.

Abstract: An image capturing device is provided, which includes a capacitive trans-impedance amplifier (CTIA) unit cell. The CTIA unit cell includes an image detector and a switching network. The image detector is configured to detect light having a first color and light having a second color different from the first color, and to generate a photocurrent in response to detecting the light. The switching network includes a CTIA switch, a CTIA low reset switch, and a CTIA high-reset biasing switch. The CTIA switch sets a first reset level of the CTIA unit cell to a first voltage in response invoking a first switching state of the CTIA low-reset switch and sets a second reset level of the CTIA to a second voltage greater than the first voltage level in response to invoking a second switching state of the CTIA low-reset switch.

Abstract: Various methods and systems are provided for image processing for multiple cameras. In one embodiment, a method comprises acquiring a plurality of image frames from each image frame source of a plurality of image frame sources, each plurality of image frames acquired at a first frame rate, combining the plurality of image frames from each image frame source into a single plurality of image frames with a second frame rate higher than the first frame rate, and outputting the single plurality of image frames as a video. In this way, high-frame-rate video may be obtained with multiple low-frame-rate image frame sources or cameras.

Abstract: An image sensor including a pixel array section in which a plurality of pixels including photoelectric conversion units is disposed, and a comparator that compares an analog pixel signal output from the pixels to a predetermined reference signal, and outputs a comparison result according to a signal level of the pixel signal. The comparator includes differential pair transistors, a first load transistor connected in series with a first transistor of the differential pair, and a second load transistor connected in series with a second transistor of the differential pair. The first transistor of the differential pair accepts a signal obtained by combining the pixel signal and the predetermined reference signal as a gate input, the second transistor of the differential pair accepts a predetermined voltage as a gate input.

Abstract: A pixel of an image sensor includes a pinned photodiode (PPD), a switching device and an output circuit. A first terminal of the switching device is coupled to the PPD. A second terminal of the switching device is coupled to a floating diffusion (FD). A third terminal of the switching device is coupled to a first enable signal and a second enable signal. The switching device is responsive to the first enable signal to transfer a first charge on the PPD to the FD, and responsive to the second enable signal to transfer a second charge on the PPD to the FD. The output circuit outputs a first voltage based on the first charge and outputs a second voltage based on the second charge in which the first voltage corresponds to a time of flight of one or more detected photons and the second voltage corresponds to a greyscale image.

Abstract: A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.

Abstract: A solid state imaging device includes a substrate, in which the substrate includes a photoelectric conversion unit that generates a charge according to a light amount of incident light by a pixel unit, an accumulation unit that divides the charge of the pixel unit which is generated in the photoelectric conversion unit and accumulates the charge, a first element isolation unit that is formed at a boundary of the photoelectric conversion unit of the pixel unit, and a second element isolation unit that is formed at a boundary of the accumulation unit of a divided unit of the pixel.