Abstract: An imaging device includes a first pixel. The first pixel has a photoelectric converting portion, a first capacitance element, and a first transistor. The photoelectric converting portion converts incident light into signal charge. The first capacitance element includes a first terminal and a second terminal, the first terminal being electrically connected to the photoelectric converting portion in at least a period of exposure. The first transistor includes a first source and a first drain, one of the first source and the first drain is electrically connected to the second terminal, and a direct-current potential is applied to the other of the first source and the first drain.

Abstract: An acquisition method includes: acquiring a first image without a flicker band; acquiring a second image with the flicker band; generating a third image of an extracted flicker band based; determining a division method of dividing the third image; dividing the third image into a plurality of areas based on the division method; calculating brightness of each area of the third image; acquiring at least one of a brightest value of the brightness and a darkest value of the brightness; acquiring peak timing of the flicker; calculating the number of frames captured by an image sensor to detect the peak timing; causing the image sensor to continuously capture images to generate a plurality of pieces of image data; acquiring the first image from the plurality of pieces of image data; and acquiring the second image from the plurality of pieces of image data.

Abstract: The zoom lens consists of, in order from the object side, a positive first lens group that does not move during zooming, a negative second lens group that moves during zooming, a negative third lens group that moves during zooming, at least one lens group that moves during zooming, and a rear group that does not move during zooming. All distances between the lens groups adjacent to each other change during zooming. The zoom lens satisfies predetermined conditional expressions.

Abstract: This disclosure provides a NDIR gas sensor comprising: an optical filter having a substrate and a multilayer film; and an infrared light emitting and receiving device having a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type; where the multilayer film has a structure in which a first layer and a second layer are alternately stacked; the active layer contains InAsySb1-y (0.1?y?0.2); and the optical filter includes a wavelength range having an average transmittance of 70% or more with a width of 50 nm or more in a wavelength range of 6 ?m to 10 ?m, and has a maximum transmittance of 10% or more in a wavelength range of 12.5 ?m to 20 ?m and an average transmittance of 5% or more and 60% or less in a wavelength range of 12.5 ?m to 20 ?m.

Abstract: A camera includes a camera focus adjustment device, a lens, and an image sensor coupled to the camera focus adjustment device. The camera focus adjustment device includes a flexure structure. The flexure structure includes an outer framework of structural members continuously interconnected by flexure notch hinges. The flexure structure also includes two inner structural members oriented in parallel and extending from the outer framework of structural members. A gap is between the two inner structural members. The camera focus adjustment device also includes a piezoelectric material within the gap and a pair of wedges within the gap. The pair of wedges is affixed to the piezoelectric material and to one inner structural member of the two inner structural members. Based on temperature-based piezoelectric activity associated with the piezoelectric material, the camera focus adjustment device is operable to move the image sensor relative to the lens.

Abstract: In a solid-state imaging element in which an ADC is disposed, deterioration of conversion accuracy of the ADC caused by a dark current is inhibited. A signal voltage sample-and-hold circuit samples and holds, as a sample signal voltage, a voltage obtained by dividing a difference between a voltage of a vertical signal line corresponding to a light reception amount in a pixel and a predetermined variable reference voltage. An analog-to-digital converter converts an analog signal corresponding to the sample signal voltage to a digital signal. A reference voltage control section performs control to modulate a value of the variable reference voltage according to a dark current amount in the pixel.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.

Abstract: An image sensor is disclosed. The image sensor may include pixel groups, which are two-dimensionally arranged on a substrate, and each of the pixel groups including a plurality of pixels. The image sensor may also include a light-blocking pattern, which is disposed on the substrate and between the pixels. The pixel groups may include first image pixel groups sensing a first light, second image pixel groups sensing a second light, and an auto-focus (AF) pixel group detecting a phase. The AF pixel group may include a first AF pixel and a second AF pixel adjacent to each other, and the light-blocking pattern may be absent on the substrate between the first AF pixel and the second AF pixel.

Abstract: An image capturing apparatus includes an image sensor in which a plurality of unit pixels are arranged, each unit pixel including one microlens and at least one light receiving portion that produces a pulse signal when light is incident on the light receiving portion, wherein the unit pixel includes a counting circuit capable of counting the pulse signals of a plurality of the light receiving portions.

Abstract: An image sensing device and an image sensing method are provided. The image sensing device comprises an image sensing array, multiple analog-to-digital converters, a multiplexer, a write controller, a memory, and a read controller. Each of pixel capturing areas of the image sensing array acquires multiple analog pixel data sequentially at the same time. Each of the analog-to-digital converters converts these analog pixel data into multiple digital pixel data. The write controller receives the digital pixel data generated by the analog-to-digital converters from the multiplexer, and writes the digital pixel data to the memory according to a first pixel arrangement of the digital pixel data. The read controller reads the digital pixel data from the memory according to a second pixel arrangement related to the video format, thereby generating a video signal of the video format.

Abstract: A camera system includes an imaging device configured to change sensitivity according to an instruction from a user; a display; and a graphic interface unit that causes the display to selectively display a first image for receiving the instruction for continuously changing the sensitivity and a second image for receiving the instruction for changing the sensitivity stepwise.

Abstract: A light measurement processing unit controls the driving of a light measurement sensor in a plurality of drive modes. The light measurement processing unit performs light measurement calculation of obtaining the brightness of a subject when a first drive mode is set and calculation of detecting flicker of a photographed scene when a second drive mode is set. Furthermore, the light measurement processing unit performs calculation of detecting a motion vector of the subject between images of continuous frames in the first drive mode. A camera control unit determines a shutter speed by limiting a speed on a high speed side as compared to when flicker is not detected at the time of panning in light exposure control, when flicker is detected at the time of panning on the basis of the calculation result of the light measurement processing unit.

Abstract: An image sensor includes an active pixel array, at least one dummy reset array, a dummy read array, and an image processor. The image processor sequentially resets respective rows of pixels included in the at least one dummy reset array in a period in which pixels of the active pixel array do not perform a reset operation, and sequentially reads respective rows of pixels included in the dummy read array in a period in which the pixels of the active pixel array do not perform a read operation.

Abstract: The present disclosure relates to a readout circuit of a pixel array comprising: a first analog to digital converter coupled to a first column line of the pixel array and configured to convert a reference voltage level and a captured voltage level of a first pixel based on a first conversion gain of the first pixel; and a second analog to digital converter coupled to the first column line of the pixel array and configured to convert a reference voltage level and a captured voltage level of the first pixel based on a second conversion gain of the first pixel, the first and second conversion gains being different from each other.

Abstract: In an imaging device, each of first and second pixels in a same column includes a photoelectric converter, a first transistor, and a second transistor wherein a source (or a drain) of the first transistor is connected to the photoelectric converter, a gate of the second transistor is connected to the photoelectric converter, and a source (or a drain) of the second transistor is connected to the drain (or the source) of the first transistor. A first current source is configured to be electrically connected to the source (or the drain) of the second transistor of the first pixel, a second current source is configured to be electrically connected to the source (or the drain) of the second transistor of the second pixel, and a signal line is configured to be electrically connected to the drain (or the source) of the second transistor of the first pixel and to the drain (or the source) of the second transistor of the second pixel.

Abstract: Switching techniques for fast voltage settling in image sensors are described. In one embodiment, a transfer gate (TX) driver circuit of an image sensor includes a TX driver configured to provide a TX driver voltage to a plurality of pixels of an image sensor. A power supply (NVDD) is operationally coupled to the TX driver. A first switch (SW1) operationally coupling an outside capacitance (Cext) and the TX driver. A second switch (SW2) operationally coupling the Cext and the NVDD. A third switch (SW3) operationally coupling the NVDD and the TX driver. A falling edge of the TX driver voltage is configured to control a start of data transfer from individual pixels of the plurality of pixels. The SW1 and the SW2 are configured in an open position before the falling edge of the TX driver voltage. The SW3 is configured in a closed position before the falling edge.

Abstract: This disclosure describes devices, systems, and methods that relate to obtaining image frames with variable resolutions in synchronization with a clock source. An example device may include an image sensor, a clock input, and a controller. The controller includes at least one processor and a memory. The at least one processor is operable to execute program instructions stored in the memory so as to carry out operations. The operations include receiving, by the clock input, a clock signal. The clock signal is a periodic signal defining at least one scan interval. The operations also include during the scan interval, causing the image sensor to capture a full resolution image frame. The operations yet further include during the scan interval, causing the image sensor to capture at least one reduced resolution image frame.

Abstract: The present technology relates to an AD conversion device, an AD conversion method, an image sensor, and an electronic apparatus that are able to achieve high-speed, low-power-consumption AD conversion. In a case where an electrical signal and a variable-level reference signal are compared by a comparator and the result of comparison is used to perform AD (Analog to Digital) conversion of the electrical signal, control is exercised in such a manner that a bias current flowing in the comparator to operate the comparator during a certain section of the reference signal including a section where the reference signal changes is increased from a first current, which is larger than 0 (zero), to a second current, which is larger than the first current. The present technology is applicable, for example, to AD conversion of an electrical signal.

Abstract: A method of routing electrical connections in a wafer-on-wafer structure comprises, bonding a metal bonding pad of a first wafer to a metal bonding pad of a second wafer; bonding first wafer to the second wafer with a material different from the metal bonding pads; forming metal interconnect structures connecting the metal bonding pad of the first wafer to a first device disposed within a first and second side of the first wafer; and forming metal interconnect structures connecting the metal bonding pad of the second wafer to a second and third devices disposed within the second wafer, to connect the first device to the second and third devices through the metal bonding pads, wherein the electrical connections of the devices between the first and second wafers do not have a through-via that passes completely through the first or the second wafer.

Abstract: Various embodiments of the present application are directed towards a pad with high strength and bondability. In some embodiments, an integrated chip comprises a substrate, an interconnect structure, a pad, and a conductive structure. The interconnect structure adjoins the substrate and comprises wires and vias. The wires and the vias are stacked between the pad and the substrate. The conductive structure (e.g., a wire bond) extends through the substrate to the pad. By arranging the wires and the vias between the pad and the substrate, the pad may be inset into a passivation layer of the interconnect structure and the passivation layer may absorb stress on the pad. Further, the pad may contact the wires and the vias at a top wire level. A thickness of the top wire level may exceed a thickness of other wire levels, whereby the top wire level may be more tolerant to stress.

Abstract: An optical filter including a base member having a layer containing near-infrared absorbing fine particles and a dielectric multilayer film, the optical filter satisfying a requirement that, in a wavelength range of 400 nm to 650 nm, an average of transmittance of any of light incident from a direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees, and light obliquely incident at an angle of 60 degrees is 45% or higher and lower than 85%; and a requirement that, in a wavelength range of 800 nm to 1,200 nm, an average of optical density (OD value) of any of light incident from the direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees with respect to the perpendicular direction, and light obliquely incident at an angle of 60 degrees with respect to the perpendicular direction is 1.7 or higher.

Abstract: An imaging method and device, the method comprising: acquiring, at a specified imaging time, a pulse sequence in a time period before the specified imaging time, with regard to each pixel of a plurality of pixels; calculating a pixel value of the pixel according to the pulse sequence; obtaining a display image at the specified imaging time according to a space arrangement of the pixels, in accordance with pixel values of the plurality of pixels at the specified imaging time.

Abstract: A camera module and its photosensitive assembly and manufacturing method thereof are provided. The photosensitive assembly includes a photosensitive element, a window circuit board and a packaging body integrally packaged the photosensitive element and the window circuit board to form an integrated body, wherein the window circuit board has at least one window for receiving the photosensitive element therein.

Abstract: A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.

Abstract: An image picking-up system includes seven lens elements, which are, in order from an object side to an image side, a first lens group including a first lens element and a second lens element, a second lens group including a third lens element and a fourth lens element, and a third lens group including a fifth lens element, a sixth lens element and a seventh lens element. The third lens element has positive refractive power. The fourth lens element has an image-side surface being concave in a paraxial region thereof. At least one surface of object-side surfaces and image-side surfaces of the seven lens elements includes at least one inflection point.

Abstract: A photoelectric conversion apparatus includes a semiconductor layer having a front surface and a back surface and in which a plurality of photoelectric conversion portions is provided between the front surface and the back surface, a wiring structure arranged on the front surface side of the semiconductor layer, a separation portion arranged between the plurality of photoelectric conversion portions and formed by a trench continuing from the back surface, a first light shielding portion arranged above the semiconductor layer on the back surface side so as to overlap the separation portion, and a second light shielding portion arranged above the semiconductor layer on the back surface side so as to face the first light shielding portion via a region located above at least one photoelectric conversion portion among the plurality of photoelectric conversion portions.

Abstract: An image sensor including: a plurality of phase shift code generators, wherein each of the plurality of phase shift code generators outputs a phase shift code; a test data selection circuit for outputting test data corresponding to a test pattern; a counter for receiving the phase shift code from at least one of the plurality of phase shift code generators, receiving the test data from the test data selection circuit, latching a digital code corresponding to the test pattern using the phase shift code, and outputting the digital code; and a control logic for calculating a data pattern using the digital code and selecting one of the plurality of phase shift code generators in accordance with a result of a comparison between the data pattern and the test pattern.

Abstract: Disclosed in the present disclosure are an OLED display panel, a driving method therefor and a display device. A first light-blocking layer is disposed between a photosensitive unit and an organic electroluminescent structure, and the first light-blocking layer at least has a hollow area corresponding to a fingerprint identification area. When a finger touches a screen, the lights emitted by the organic electroluminescent structure are reflected by the finger to irradiate the photosensitive unit through small holes, such that fingerprint information of the finger is detected due to the brightness differences among the lights reflected by ridges and valleys of the finger. The small holes in the hollow area can function to improve the light intensity convergence, thus increasing the sensitivity to finger touches to the greatest extent.

Abstract: An event camera includes an event-based sensor configured to detect a change in light intensity for each pixel as an event, and asynchronously output an event signal including a time when the event is detected and a pixel position where the event has occurred, a buffer configured to store the event signal output by the event-based sensor within a predetermined period between a time traced back to the past by the amount of the predetermined time from a reference time, and the reference time, a storage configured to store an image, and an update unit configured to update the image stored in the storage based on the event signal such that the image stored in the storage becomes an image of an update time included in the predetermined period.

Abstract: The present technology relates to, for example, a lens attached substrate including a substrate which has a through-hole formed therein and a light shielding film formed on a side wall of the through-hole and a lens resin portion which is formed inside the through-hole of the substrate. The present technology can be applied to, for example, a lens attached substrate, a layered lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic device, a computer, a program, a storage medium, a system, and the like.

Abstract: To reduce the number of ADCs in a solid-state image sensor that converts an analog pixel signal into a digital signal. An effective pixel generates an analog signal according to an amount of received light as an effective pixel signal using a power supply from a power supply line. A correction signal generation unit generates an analog signal including a noise component generated in the power supply line as a correction signal. A selection unit sequentially selects and outputs the effective pixel signal and the correction signal. An analog-digital converter performs processing of converting the output effective pixel signal into a digital signal and outputting the digital signal as effective pixel data and processing of converting the output correction signal into a digital signal and outputting the digital signal into correction data. A signal processing unit corrects the effective pixel data on the basis of the correction data.

Abstract: An image sensor comprises: a plurality of pixels, each pixel including a light-receiving portion that outputs an electrical signal obtained by photoelectrically converting incident light and an A/D converter that AD-converts the electrical signal, the plurality of pixels configured to be capable of AD-converting a signal output from the light-receiving portion of a first pixel, among a predetermined plurality of pixels, using the A/D converter of another pixel, every predetermined plurality of pixels; and a selection circuit that selects a pixel to AD-convert the electrical signal output from the light-receiving portion of the first pixel, every predetermined plurality of pixels. The A/D converters of the predetermined plurality of pixels carry out the AD conversion in parallel.

Abstract: A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.

Abstract: A digital device for image acquisition (10) comprises at least one selection decoder circuit (60) and a plurality of sub-blocks (50) each comprising one or more pixels (20) and a corresponding charge control circuit (30) which provides a circuit suitable for realizing a logic port of the AND type (31) having a selector input terminal (34) which receives the selection signal from the selection decoder circuit (60) and a suitable enabling input terminal (35) to receive an enabling signal; and interruption organs (32) connected to the reset terminal (21) of the pixel (20) to transmit a reset signal constituted alternatively by a signal output from the aforesaid circuit suitable for realizing a logic port of the AND type (31) or from a global reset signal transmitted to a corresponding global reset terminal (38).

Abstract: A circuit includes a selection circuit electrically coupled to pixels of a line of an event vision sensor. The selection circuit is configured to receive an activation signal from an active pixel of the line, generate an acknowledge signal in response to receiving the activation signal, and send the acknowledge signal to the pixels of the line. The circuit also includes a control circuit that is electrically coupled to a pixel having a largest distance to the selection circuit among the pixels of the line. The control circuit is configured to receive the acknowledge signal from the selection circuit, and generate a process-reading signal in response to receiving the acknowledge signal. The circuit also includes an interface circuit electrically coupled to the pixels of the line and configured to cause a reset of the selection circuit, the control circuit, and the pixels of the line after receiving the process-reading signal.

Abstract: The present disclosure relates to an imaging device capable of enhancing an accuracy of detecting a light with a narrow wavelength band, and an electronic apparatus. An imaging device includes a pixel array including an effective region used for obtaining an image and a surrounding region around the effective region, a plurality of kinds of first optical filters configured to transmit a light with a respective different wavelength are provided in respective pixels in the effective region, a second optical filter having a transmission band with a smaller bandwidth than a bandwidth of a transmission band of the first optical filters is provided in a first pixel in the surrounding region, and a third optical filter with a difference in transmission band from the second optical filter of a predetermined wavelength or more, or with a transmissivity equal to or lower than a transmissivity of the second optical filter is provided in a second pixel adjacent to the first pixel.

Abstract: A flexibly usable optoelectronic sensor device for detecting an object, comprising a receiving device for receiving light backscattered after the scattering of an emitted light beam at the object, wherein the receiving device has an array of at least two receiving elements for detecting radiation and a receiving optical unit for imaging the received radiation on the array; the array is divisible and/or divided into at least two array regions, wherein the at least two array regions correspond in each case to scatterings at objects at different distances from the monitoring region and/or different brightnesses of the received radiation, and the receiving elements respectively arranged in different array regions are settable and/or set to detect with mutually different light sensitivities.

Abstract: There is provided a monitoring camera system including at least one monitoring camera and a recorder connected to the monitoring camera. The monitoring camera captures an image of an area of a monitoring target, detects a motion in a captured video of the area, associates information relating to the motion with the captured video, and transmits the associated result to the recorder. The recorder associates the captured video of the area captured by the monitoring camera and the information relating to the motion with the monitoring camera, and records the associated result. The recorder reproduces the captured video of the area on a monitor recorded in the way that a reproduction speed of the captured video in a section in which the motion is not detected on the monitor is faster than a reproduction speed of the captured video in a section in which the motion is detected, based on the information relating to the motion.

Abstract: A pixel circuit is disclosed. The pixel circuit includes a photodiode (PD), a transmission circuit, a reset circuit, a signal storage circuit and a buffer circuit. The transmission circuit is coupled between the PD and an ordinary floating diffusion (FD) node. The reset circuit is coupled to the ordinary FD node. The signal storage circuit is coupled to the ordinary FD node. The buffer circuit is coupled to the ordinary FD node. The signal storage circuit may store a PD signal on a specific node having a reduced leakage path in comparison with the ordinary FD node during a holding phase of the pixel circuit, wherein the holding phase is a time interval starting from a first time point at which the PD signal is stored on the specific node and ending at a second time point at which the pixel circuit is selected for performing a read-out operation.

Abstract: In order to provide an imaging device that includes an amplifier performing amplification with a plurality of gains for each signal from a pixel unit and can further reduce a noise component, an imaging device included in an imaging apparatus has the pixel unit in which unit pixels are arranged in a matrix and generates a signal voltage by photoelectric conversion. A column amplifier can amplify a photoelectrically converted signal with a plurality of gains. After an amplified signal is subjected to analog/digital conversion by a column ADC, a signal processing circuit subtracts a noise signal from a pixel signal. A noise signal read out after resetting a floating diffusion section included in the pixel unit and a pixel signal read out immediately thereafter are acquired by being multiplied by a first gain, and a pixel signal read out thereafter is acquired by being multiplied by a second gain. The first gain is set to a value larger than the second gain.

Abstract: At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.

Abstract: Disclosed herein is a method comprising: obtaining a third image from a first X-ray detector when the first X-ray detector and a second X-ray detector are misaligned; determining, based on a shift between a first image and the third image, a misalignment between the first X-ray detector and the second X-ray detector when the first and second detectors are misaligned; wherein the first image is an image the first X-ray detector should capture if the first and the second detectors are aligned.

Abstract: An image capturing apparatus includes a pixel array, an AD converter, an output line configured to connect the pixel and the AD converter, a reset unit configured to reset the output line, an amplification transistor configured to amplify a signal from the pixel, a connection unit configured to connect a source of the amplification transistor to the output line, a constant current source, and a control unit configured to, after a voltage of the output line is reset, cause a constant current to flow to the output line and to control to connect a source of the amplification transistor to the output line, wherein the control unit sets a value of the constant current so that the constant current is a lower value than a current required to drive the output line.

Abstract: The present technology relates to a solid-state imaging element and an imaging apparatus that provides an ample dynamic range. The solid-state imaging element includes a pixel array section and a readout load section. The pixel array section has a readout pixel and a reference pixel. A pixel signal proportional to an amount of incident light is read out from the readout pixel. The reference pixel has characteristics similar to those of the readout pixel. The readout load section forms a differential amplification circuit together with the readout pixel and the reference pixel and inputs, to the reference pixel, a pseudo-dark current signal corresponding to a dark current signal that occurs in the readout pixel, thus canceling the dark current signal. The present technology is applicable to a CMOS image sensor.

Abstract: An intraoral sensor includes an image sensor, an FOP, a scintillator, a case, and a signal cable. The FOP includes a first main surface, a second main surface, and a plurality of lateral surfaces. The first main surface and the second main surface have a polygonal shape. An edge of the second main surface is constituted by a plurality of corner portions, and a plurality of side portions. The scintillator is provided on the second main surface and the plurality of lateral surfaces in such a manner that a second corner portion out of the plurality of corner portions and a second ridge portion are exposed. The second corner portion located on a second direction side opposite to a first direction in which the signal cable extending beyond, and the second ridge portion constituted by the lateral surfaces adjacent to the second corner portion adjacent to each other.

Abstract: A system has an array of pixels including a plurality of active pixels and a plurality of dark reference pixels and processing circuitry coupled to the array of pixels. The processing circuitry sequentially computes, for each of a plurality of pairs of sets of dark reference pixels of the plurality of dark reference pixels, absolute differences in dark signal levels of the pair of sets of dark reference pixels. The absolute differences in dark signal levels are accumulated and a noise level of the dark reference pixels of the array of pixels is estimated based on the accumulated absolute differences. The system may be employed in, for example, a back-up camera of an automobile or a mobile phone.

Abstract: An image noise reduction device and method thereof are provided. The method includes: receiving an original image, where the original image includes a plurality of image pixels, each of the image pixels has an image pixel value and a fixed noise value, and the fixed noise value includes a decimal; obtaining a bit-shifted image pixel value, a bit-shifted fixed noise value, and a random number according to a number of bits of the decimal, the image pixel values, and the fixed noise values; obtaining a bit-shifted noise-reduced image pixel value according to the bit-shifted image pixel value, the bit-shifted fixed noise value, the random number, and a reduction equation; obtaining a noise-reduced image pixel value according to the number of bits of the decimal and the bit-shifted noise-reduced image pixel value; and obtaining a noise-reduced image according to the noise-reduced image pixel value.

Abstract: An image sensor includes a semiconductor substrate of first conductivity type having first and second surfaces and including pixel regions, photoelectric conversion regions of second conductivity type respectively provided in the pixel regions, and a pixel isolation structure disposed in the semiconductor substrate to define the pixel regions and surrounding each of the photoelectric conversion regions. The pixel isolation structure includes a semiconductor pattern extending from the first surface to the second surface of the semiconductor substrate, a sidewall insulating pattern between a sidewall of the semiconductor pattern and the semiconductor substrate, and a dopant region in at least a portion of the semiconductor pattern.

Abstract: An adaptor including: first and second optical systems; a prism comprising a mirror region, first light flux and second light flux from the respective optical systems, being incident on the prism, the light flux passing through the prism at a portion, the second light flux being reflected by a mirror region after passing through the portion, the light flux emitted from the prism to a region; and a light-shield at the region, the light-shield shields one of the first and second light flux and is disposed proximally to the prism relative to an imaging system of the endoscope when the adaptor is attached to an endoscope; the first optical system is disposed such that the first light flux is incident in a direction parallel to an optical axis, the second optical system is disposed so that the second light flux is incident in a direction orthogonal to the optical axis.