Abstract: A solid-state imaging device including: a pixel array unit in which a plurality of pixels outputting an analog pixel signal are arranged in a two-dimensional matrix form; a ramp signal generation unit configured to generate and output a ramp wave; a clock generation unit configured to generate and output multiphase clocks; and a signal-processing unit, wherein the signal-processing unit including: a plurality of analog-to-digital conversion circuits, and a plurality of repeater circuits, wherein each of the plurality of analog-to-digital conversion circuits includes: a comparison unit, and a latch unit, wherein each of the plurality of the analog-to-digital conversion circuits outputs the digital value according to the state of the phase held by each latch circuit, and wherein each of the plurality of the repeater circuits corresponding to the same set are arranged side by side, and the repeater circuits are connected in series.

Abstract: An image sensor includes a pixel array including a first pixel row, in which a plurality of first pixels and a plurality of second pixels are alternately arranged, and a second pixel row, in which a plurality of second pixels and a plurality of third pixels are alternately arranged; first color separation elements configured to allow light having a second wavelength band, among incident light, to pass therethrough and travel in a downward direction, and to allow a mixture of light having a first wavelength band and light having a third wavelength band, among the incident light, to pass therethrough and travel in a lateral direction; and first color filters on at least a portion of the plurality of first pixels, the first color filters being configured to transmit only the light having the first wavelength band.

Abstract: According to one aspect, embodiments herein provide a TDI sensor comprising a plurality of light sensing elements arranged in a row, each configured to accumulate charge proportional to an intensity of light incident on it from a field of view, and means for improving the sampling resolution of the TDI sensor by electronically introducing phase shift between a first set of image data generated by the plurality of light sensing elements at a first phase and a second set of image data generated by the plurality of light sensing elements at a second phase, for reading out the first set of image data and the second set of image data from a light sensing element at an end of the row of light sensing elements, and for generating an image of the field of view based on the two sets of phase shifted image data.

Abstract: An image sensor includes: first pixels, each of which receives a pair of light fluxes and outputs a pair of first analog signals; an A/D conversion unit that converts each of pairs of first analog signals to a pair of first digital signals; a digital adder unit that generates digital sum signals each by adding together the pair of first digital signals among pairs of first digital signals; a first output unit that outputs pairs of first digital signals to an external recipient; and a second output unit that outputs the digital sum signals to an external recipient.

Abstract: An imaging system may include an image sensor die, which may be backside illuminated (BSI). A light shielding layer and a conductive layer may be formed in the image sensor die. First and second portions of the conductive layer may be electrically isolated, so that the second conductive portion may be coupled to other power supply signals through a bond pad region, while the light shield may be shorted to ground. Optionally, the first and second portions may both be coupled to ground. The light shield may also be shorted through the bond pad region in a continuous conductive layer. A through oxide via may be formed in the image sensor die to couple metal interconnect structures to the conductive layer. Color filter containment structures may be formed over active image sensor pixels on the image sensor die, which may be selectively etched to improve planarity.

Abstract: An image sensor has a plurality of unit pixels each provided with a plurality of photoelectric conversion portions and a floating diffusion portion, and an analog-digital converter. The analog-digital converter is controlled to: convert a reset level of the floating diffusion portion by counting in a first or second direction to acquire a first noise signal, acquire a first optical signal by counting in the first direction an analog signal of a first photo charge accumulated in a first photoelectric conversion portion, acquire a second noise signal by counting in the second direction a potential that the floating diffusion portion has after the first optical signal is acquired, and acquire a second optical signal by counting in the first direction an analog signal of a second photo charge accumulated in a second photoelectric conversion portion.

Abstract: A method of driving a unit pixel may include activating a transfer signal prior to an activation of a reset signal to boost a floating diffusion node of the unit pixel, during a first section of a photodiode reset period; and activating a reset signal using a hard reset, during a second section of the photodiode reset period.

Abstract: The present technology relates to a semiconductor device and electronic equipment in which a semiconductor device that suppresses the occurrence of noise by a leakage of light can be provided. A semiconductor device is configured which includes a light-receiving element 34, an active element for signal processing, and a light shielding structure 40 which is between the light-receiving element 34 and the active element to cover the active element and is formed of wirings 45 and 46. The semiconductor device further includes a first substrate on which the light-receiving element is formed, a second substrate on which the active element is formed, and a wiring layer which has a light shielding structure by the wirings which is formed on the second substrate, and in which the second substrate can be bonded to the first substrate through the wiring layer.

Abstract: A four-element athermal lens includes four coaxially aligned lenses including a (i) first lens and, in order of increasing distance therefrom and on a same side thereof, (ii) a second lens, a third lens, and a fourth lens. The first lens and the second lens are positive lenses. The third and fourth lenses are negative lenses. The first lens, second lens, third lens, and fourth lens have equal respective refractive indices n1, n2, n3, and n4. A difference between (i) the maximum of n1, n2, n3, and n4 and (ii) the minimum of n1, n2, n3, and n4 being less than 0.05 in a free-space wavelength range. Refractive indices n1, n2, n3, and n4 have respective temperature dependences ? ? ? n 1 ? ? ? T , ? ? ? n 2 ? ? ? T , ? ? ? n 3 ? ? ? T , ? ? ? n 4 ? ? ? T .

Abstract: A photographing optical lens system includes five lens elements which are, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The second lens element has positive refractive power. The third lens element has negative refractive power. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface thereof has at least one convex critical point in an off-axial region thereof, the object-side surface and the image-side surface thereof are aspheric.

Abstract: A pixel signal readout device includes a unit pixel including a drive transistor and a reset transistor; and a column select transistor suitable for outputting a voltage applied to one terminal thereof, to a common terminal of the drive transistor and the reset transistor through the other terminal thereof, in response to a column select control signal applied to a gate terminal thereof.

Abstract: The present disclosure relates to a solid-state image sensor, an electronic apparatus and an imaging method by which specific processing other than normal processing can be sped up with reduced power consumption. The solid-state image sensor includes a pixel outputting a pixel signal used to construct an image and a logic circuit driving the pixel, and is configured of a stacked structure in which a first semiconductor substrate including a plurality of the pixels and a second semiconductor substrate including the logic circuit are joined together. In addition, among the plurality of pixels, a specific pixel is connected to the logic circuit independently of a normal pixel, the specific pixel being the pixel that outputs the pixel signal used in the specific processing other than imaging processing in which the image is imaged. The present technology can be applied to a stacked solid-state image sensor, for example.

Abstract: A solid-state imaging device has a sensing region, a pad region and a peripheral region between the sensing region and the pad region. The solid-state imaging device includes a plurality of photoelectric conversion elements formed in a semiconductor substrate and disposed in the sensing region, and a bond pad disposed on the semiconductor substrate and in the pad region. The solid-state imaging device further includes a microlens layer disposed above the semiconductor substrate. The microlens layer includes a microlens array in the sensing region and a first dummy structure in the pad region. The first dummy structure includes a plurality of first microlens elements disposed to surround an area of the bond pad. Moreover, the solid-state imaging device includes a passivation film conformally formed on a top surface of the microlens layer.

Abstract: The present invention concerns an imaging apparatus having a plurality of pixels, each of the pixels including: a first photoelectric converter; a first pixel memory; a first transfer unit configured to transfer charges from the first photoelectric converter to the first pixel memory; a second photoelectric converter; a second pixel memory; a second transfer unit configured to transfer charges from the second photoelectric converter to the second pixel memory; and a switch adapted to control an electric connection state between the first pixel memory and the second pixel memory, wherein the exposure time of the first photoelectric converter is longer than the exposure time of the second photoelectric converter.

Abstract: The present technology relates to a comparator circuit, a solid-state imaging apparatus, and an electronic device which enable to improve a frame rate. A comparator compares an analog signal with a reference signal, an amplification stage amplifies output of a comparing unit and has different output change speeds in normal rotation and in reverse rotation, and a switch circuit fixes an input node or an output node of the amplification stage to a predetermined voltage in a predetermined period before a comparing operation by the comparator so that the amplification stage operates in a change direction having a higher output change speed. The present technology can be applied to a comparator circuit provided to an A/D converter of a CMOS image sensor.

Abstract: A method of interfacing an event based processing system with a frame based processing system is presented. The method includes converting multiple events into a frame. The events may be generated from an event sensor. The method also includes inputting the frame into the frame based processing system.

Abstract: An imaging device including at least one pixel, where each of the at least one pixels includes a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface; a first electrode located on the first surface; a second electrode located on the first surface, the second electrode being separated from the first electrode, a first voltage being applied to the second electrode; a third electrode located on the second surface, the third electrode opposing to the first electrode and the second electrode, a second voltage being applied to the third electrode; and an amplifier transistor having a gate electrically connected to the first electrode, where an absolute value of a difference between the first voltage and the second voltage is larger than an absolute value of a difference between the second voltage and a voltage of the first electrode.

Abstract: A photographing apparatus for preventing or reducing light leakage and an image sensor thereof are provided. The photographing apparatus includes an image sensor configured to include a plurality of pixels respectively having a Photo Diode and a Storage Diode for temporarily storing a charge accumulated in the Photo Diode and an image processor configured to perform an image processing operation by receiving the charge stored in the Storage Diode of each of the plurality of pixels. In addition, the image sensor has a structure where the Storage Diodes of the plurality of pixels are arrayed to be adjacent to each other. Accordingly, the photographing apparatus may prevent the light leakage from the adjacent pixel being flowed into a Storage Diode of each pixel.

Abstract: A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

Abstract: At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.

Abstract: An imaging device includes: a solid-state image sensor including: a plurality of pixels that are arranged in a two-dimensional array; and a signal processing device that processes an output signal from the solid-state image sensor. The imaging device generates a corrected image by: generating a correction signal based on a difference between a first temporary correction signal and a second temporary correction signal, the first temporary correction signal being obtained by directly applying a first voltage amplitude to a signal storage provided in each of the plurality of pixels, and the second temporary correction signal being obtained by applying, to the signal storage, a second voltage amplitude that is different from the first voltage amplitude; acquiring an image signal upon a photographing drive operation being performed by the solid-state image sensor; and applying the correction signal to the image signal.

Abstract: A mobile terminal including a main body; a receiver disposed on the main body; an infrared unit disposed on the main body at a first distance from the receiver in a first direction and configured to output infrared rays; an iris recognition sensor disposed on the main body at a second distance from the receiver in a second direction opposite the first direction and configured to receive infrared rays reflected from a subject; and a low power image sensor disposed on the main body at a third distance from the receiver in the second direction and having a focal point matching a focal point of the iris recognition sensor, wherein the third distance is greater than the second distance.

Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity, and an electronic apparatus.

Abstract: A computer-implemented method of producing an augmented image of a spine of a patient is disclosed. The method involves: receiving a first ultrasonic volumetric dataset representing a three-dimensional depiction of anatomical features of the spine in a first volume; instantiating a three-dimensional atlas of at least two vertebrae according to the first ultrasonic volumetric dataset; and causing a display to display a rendering of the first ultrasonic volumetric dataset together with a rendering of the atlas. An apparatus for producing the augmented image of the spine of the patient is also disclosed.

Abstract: A vehicular camera includes a lens, an image processor configured to receive images from the lens, and a microcontroller containing flash memory. The microcontroller is connected to the image processor by a first bus through which command data is communicated to the image processor from the microcontroller. The command data includes application instructions to draw application data from a selected point in the flash memory. The microcontroller is connected to the image processor by a second bus through which application data is communicated to the image processor from the flash memory.

Abstract: A pixel array within an integrated-circuit image sensor is exposed to light representative of a scene during a first frame interval and then oversampled a first number of times within the first frame interval to generate a corresponding first number of frames of image data from which a first output image may be constructed. One or more of the first number of frames of image data are evaluated to determine whether a range of luminances in the scene warrants adjustment of an oversampling factor from the first number to a second number, if so, the oversampling factor is adjusted such that the pixel array is oversampled the second number of times within a second frame interval to generate a corresponding second number of frames of image data from which a second output image may be constructed.

Abstract: A light field imaging device includes an image sensor having a plurality of pixels arranged two-dimensionally therein; a microlens array formed over the image sensor, the microlens array having a plurality of microlenses arranged two-dimensionally therein; and a plurality of support structures formed between the image sensor and the microlens array for providing an air gap therebetween.

Abstract: The present technology relates to an imaging device, a manufacturing device, and a manufacturing method that enable a reliable manufacturing device to be manufactured without an increase in the number of manufacturing steps. A substrate on which an image sensor is mounted, a frame that fixes an infrared cut filter (IRCF), and a unit including a lens are included. The image sensor is sealed by the substrate, the IRCF, and the frame. A vent connected to a space in which the image sensor is sealed is provided in a part of the frame. The vent is blocked by a member that bonds the unit and the frame together. The vent is provided in the frame, in a predetermined shape, and in a vertical direction with respect to a surface to which the member is applied. The present technology can be applied to the imaging device.

Abstract: An image capturing device includes a pixel circuit, a programmable-gain amplifier, an analog-to-digital conversion circuit, and a control circuit. The pixel circuit outputs a photoreception signal. The programmable-gain amplifier amplifies the photoreception signal with a first gain. The analog-to-digital conversion circuit further amplifies the amplified signal that has been amplified by the programmable-gain amplifier, with a second gain by having a circuit configuration changeable by control, and digitally converts the resultant signal. The control circuit controls the analog-to-digital conversion circuit.

Abstract: An imaging apparatus is provided, which includes an image sensor which includes a plurality of image pixels and a plurality of sensing pixels, and is configured to capture images through collection of light that is incident through a lens and the plurality of phase sensing pixels; and a processor configured to divide a region of interest of the image sensor into a plurality of sub-regions of interest, calculate disparity information of objects that correspond to the plurality of sub-regions of interest using at least one of the plurality of phase sensing pixels included in the plurality of sub-regions of interest, and determine a focal region in the region of interest on the basis of the disparity information. Accordingly, user convenience is increased.

Abstract: An imaging device includes: a pixel array section having an array of pixels, each of which has a photoelectric converting device and outputs an electric signal according to an input photon; a sense circuit section having a plurality of sensor circuits each of which makes binary decision on whether there is a photon input to a pixel in a predetermined period upon reception of the electric signal therefrom; and a decision result IC section which integrates decision results from the sense circuits, pixel by pixel or for each group of pixels, multiple times to generate imaged data with a gradation, the decision result IC section including a count circuit which performs a count process to integrate the decision results from the sense circuits, and a memory for storing a counting result for each pixel from the count circuit, the sense circuits sharing the count circuit for integrating the decision results.

Abstract: Provided is a solid-state imaging device including: a pixel section configured to include a plurality of pixels arranged in a matrix form, the plurality of pixels performing photoelectric conversion; column signal lines configured to transmit pixel signals output from the pixels in units of columns; an AD converting section configured to include a comparator that compares a reference signal serving as a ramp wave with the pixel signals transmitted via the column signal line and convert a reference level and a signal level of the pixel signals into digital signals independently based on a comparison result of the comparator; a switch configured to be connected with the column signal lines; and a control section configured to turn on the switch only during a certain period of time in a period of time in which the comparator is reset and cause the column signal lines to be short-circuited.

Abstract: Techniques for fabricating a semiconductor die having a curved surface can include placing a substantially flat semiconductor die in a recess surface of a concave mold such that corners or edges of the semiconductor die are unconstrained or are the only portions of the semiconductor die in physical contact with the concave mold. The semiconductor die can include through-die cut lines that can lead to substantially less tension in the semiconductor die as compared to the case where the semiconductor die does not include through-die cut lines. Accordingly, such through-die cut lines can allow for achieving relatively large curvatures.

Abstract: An apparatus includes a plurality of first groups having same configurations and arranged in a row direction and a column direction, each of the first groups including a plurality of pixels for obtaining a radiation image and at least one detection section for detecting an amount of incident radiation, and a plurality of detection signal lines connected to the plurality of detection sections. Two of the plurality of first groups which are arranged in the column direction are shifted from each other in the row direction, and the detection sections included in the two groups are connected to different detection signal lines in the plurality of detection signal lines.

Abstract: An electronic device may be provided with an ambient light sensor. An analog-to-digital converter may be used to digitize ambient light measurements made with the ambient light sensor. Control circuitry in the electronic device may be used to adjust the brightness of a display and take other actions in the electronic device based on the digitized ambient light measurements. The analog-to-digital converter may be a hybrid analog-to-digital converter having a most-significant-bit analog-to-digital converter circuit branch based on an integrating analog-to-digital converter and a least-significant-bit analog-to-digital converter circuit branch based on a successive-approximation-register analog-to-digital converter. The most-significant-bit branch may produce an output based a reset count for an integrator that is reset a number of times during a measurement period. The least-significant-bit branch may produce an output by digitizing an output from the integrator upon termination of the measurement period.

Abstract: An image sensor includes n light receiving elements including first to n-th light receiving elements, each of the light receiving elements generating photoelectric conversion signals, n sequencers including first to n-th sequencers, each of the sequencers having both a sequencer input terminal to which a k-th horizontal control signal is input, and a sequencer output terminal from which a (k+1)-th horizontal control signal is output, and n switches including first to n-th switches, each of the switches having a switch input terminal to which a signal corresponding to the photoelectric conversion signal is input, a switch control terminal to which a k-th pixel control signal is input, and a switch output terminal which is electrically connected to the switch input terminal, wherein n is a natural number of 2 or more, and k is a natural number of 1 to n.

Abstract: An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the counter voltage and a voltage of the pixel electrode.

Abstract: A double-lens structure and a method for fabricating the same are provided. The double-lens structure includes a first lens structure formed of a color filter layer having a first refractive index and a second lens structure formed of a micro-lens material layer having a second refractive index and disposed on the first lens structure. The first refractive index of the color filter layer is different from the second refractive index of the micro-lens material layer. An incident light enters the second lens structure and then passes through the first lens structure. Further, a method for fabricating the double-lens structure is also provided.

Abstract: A solid-state imaging device includes a pixel array with unit pixels each having a photoelectric conversion device arranged in a matrix. Column signal lines are wired with respect to one column in the pixel arrangement and pixels are regularly connected to the column signal lines in accordance with rows in which pixels are positioned. A pixel signal reading unit has a column processing unit that reads pixel signals in units of plural pixels from the pixel array and performs column processing to read signals on a column basis, wherein the pixel signal reading unit includes a column input unit which can connect one or plural column signal lines arranged at a corresponding column to an input of one column processing unit through plural capacitors connected in parallel The column input unit has switches which can change a connection state between capacitors and column signal lines corresponding to the column.

Abstract: Provided are a fingerprint sensor and a display device including the same. A fingerprint sensor array includes: a plurality of first electrodes arranged in a first direction, each of the plurality of first electrodes including at least one of: a first transparent electrode including a transparent conductive material and a first metal electrode including a low-resistance metal material; a plurality of second electrodes arranged in a second direction crossing the first direction, each of the plurality of second electrodes including at least one of: a second transparent electrode including the transparent conductive material and a second metal electrode including the low-resistance metal material; and an insulating layer between the plurality of first electrodes and the plurality of second electrodes to insulate the first electrodes from the second electrodes.

Abstract: A package for moving a platform in six degrees of freedom, is provided. The platform may include an optoelectronic device mounted thereon. The package includes an in-plane actuator which may be a MEMS actuator and an out-of-plane actuator which may be formed of a piezoelectric element. The in-plane MEMS actuator may be mounted on the out-of-plane actuator mounted on a recess in a PCB. The in-plane MEMS actuator includes a plurality comb structures in which fingers of opposed combs overlap one another, i.e. extend past each other's ends. The out-of-plane actuator includes a central portion and a plurality of surrounding stages that are connected to the central portion. The in-plane MEMS actuator is coupled to the out-of-plane Z actuator to provide three degrees of freedom to the payload which may be an optoelectronic device included in the package.

Abstract: A solid-state imaging device includes: a first substrate having first photoelectric converters; a second substrate having second photoelectric converters and laminated on the first substrate; micro lenses disposed on an opposite face facing an imaging lens among faces of the second substrate and which forms an image of light passing through the imaging lens; and a light shielding layer disposed between the first and second photoelectric converters. The light shielding layer includes: a selection portion provided with an opening portion which selectively allows passage of only light passing through a partial region of a pupil region in an exit pupil of the imaging lens among light passing through the micro lens and transmitted through the second photoelectric converter; and a light shielding portion which shields an entire light passing through the micro lens and transmitted through the second photoelectric converter.

Abstract: A solid-state image sensor includes a first pixel for detecting focus, a second pixel disposed adjacent to the first pixel, a third pixel disposed adjacent to the first pixel, and a first light reflecting member disposed between the first pixel and the third pixel. The first pixel includes a plurality of photoelectric conversion units. When a second light reflecting member is disposed between the first pixel and the second pixel, the width in a predetermined direction of the first light reflecting member is larger than the width in a predetermined direction of the second light reflecting member.

Abstract: An embodiment circuit includes a first source follower configured to be controlled by a voltage at a first node, a photodiode controllably coupled to the first node, and a bias transistor configured to be controlled by a bias voltage. The bias transistor has a first terminal coupled to an output of the first source follower. The circuit additionally includes a storage node controllably coupled to the output of the first source follower, and an amplifier controllably coupled between the storage node and an output line. Also included in the circuit is a controllable switching element configured to couple a second terminal of the bias transistor to a supply voltage in response to a pixel operating in a first mode, and to couple the second terminal of the bias transistor to the output line in response to the pixel operating in a second mode.

Abstract: An image pickup device including a vacant space portion that allows a connection electrode to be exposed to a second main surface side, the vacant space portion being formed at a position overlapping at least the connection electrode in a state where the image pickup device is viewed in plan view from a thickness direction A, and the connection electrode exposed to the second main surface side is electrically connected with a substrate at a position in the vacant space portion, the position overlapping the image pickup device in the state where the image pickup device is viewed in plan view from the thickness direction.

Abstract: An imaging lens includes a first lens group and a second lens group, arranged in this order from an object side to an image plane side. The first lens group includes a first lens having positive refractive power, a second lens having positive refractive power, and a third lens. The second lens group includes a fourth lens, a fifth lens having negative refractive power, and a sixth lens. The sixth lens has a concave surface facing the object side near an optical axis thereof.

Abstract: The present technology relates to a comparator circuit, a solid-state imaging apparatus, and an electronic device which enable to improve a frame rate. A comparator compares an analog signal with a reference signal, an amplification stage amplifies output of a comparing unit and has different output change speeds in normal rotation and in reverse rotation, and a switch circuit fixes an input node or an output node of the amplification stage to a predetermined voltage in a predetermined period before a comparing operation by the comparator so that the amplification stage operates in a change direction having a higher output change speed. The present technology can be applied to a comparator circuit provided to an A/D converter of a CMOS image sensor.

Abstract: An electronic device including a front cover, a back cover, and a sidewall configured to surround at least a part of an internal space formed between the front and back covers. Disposed in the space is a rear case including a first conductive connecting member formed therein; a first space formed between the back cover and the rear case; and a second space formed between the front cover and the rear case, the second space configured to be hermetically sealed from the first space. An electrical connecting member includes a first part disposed in the first space, a second part that extends to a surface of a non-conductive structure, and a third part electrically contacting the first conductive connecting member. A printed circuit board disposed within the second space is electrically connected with the first conductive connecting member. The sidewall may comprise an opening configured to receive a side key.

Abstract: There is provided an image sensor, including a plurality of phase difference lines in which a plurality of pixels including phase difference pixels for detecting a phase difference are arranged, a plurality of normal lines in which a plurality of normal pixels not including the phase difference pixels are arranged, a row scanning section which selects each of the plurality of phase difference lines and each of the plurality of normal lines within a first period, and selects each of the plurality of phase difference lines within a second period different from the first period, and a column scanning section which outputs pixel values of the plurality of normal pixels in each of the lines selected within the first period, and outputs pixel values of the phase difference pixels in each of the lines selected within the second period.

Abstract: Provided is an imaging device that performs multiple AD conversions including a first AD conversion and a second AD conversion for one pixel signal. A first memory has a bit width of N+1 bits (N is a natural number) and holds the least significant bit to the N+1th bit of a digital value obtained by the first AD conversion, and second memory has a bit width of M bits (M is a natural number) greater than N+1 bits and holds the least significant bit to the Mth bit of a digital value obtained by the second AD conversion.