Abstract: Some embodiments include a method, comprising: integrating an input signal using an integrator to generate an integrated signal; comparing the integrated signal to a threshold; and injecting an offset signal into the integrator in response to comparing the integrated signal to the threshold such that the integrated signal passes the threshold.

Abstract: An image sensor includes: a first readout circuit that reads out a first signal, being generated by an electric charge resulting from a photoelectric conversion, to a first signal line; a first holding circuit that holds a voltage based on an electric current from a power supply circuit; and a first electric current source that supplies the first signal line with an electric current generated by the voltage held in the first holding circuit, wherein: the first holding circuit holds the voltage based on the electric current from the power supply circuit when the first signal is not read out to the first signal line by the first readout circuit.

Abstract: An endoscope apparatus includes an optical system including a focus lens, a connector to which an interchangeable optical system is connected, an image sensor configured to output a captured image based on the optical system and the interchangeable optical system, and a processor including hardware. The processor performs a determination process of determining whether the interchangeable optical system is a known or unknown optical system, implements a first step amount determination process when the interchangeable optical system is determined to be a known optical system, and implements a second step amount determination process when the interchangeable optical system is determined to be an unknown optical system and controls the focus lens based on step amount information determined.

Abstract: The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

Abstract: A three dimensional (3D) device is formed from a first level and a second level that are attached together. The first level includes a backside illuminated two dimensional (2D) image sensor including an array of first pixels sensitive to visible light. The second level includes a frontside illuminated depth sensor including an array of second pixels sensitive to near infrared light. The first and second levels are attached in a manner such that radiation, in particular the near infrared light, received at the backside of the first level passes through the first level to reach the depth sensor in the second level.

Abstract: Provided are gaze tracking apparatuses, which in some embodiments can include an optoelectronic device, wherein the optoelectronic device includes an image sensor with non-local readout circuit having a substrate and a plurality of pixels and operatively connected to a control unit, wherein a first area of the substrate is at least partially transparent to visible light and at least the plurality of pixels of the image sensor are arranged on the first area of the substrate to aim to an eye of a user when placed in front of an inner face of the substrate, and wherein the control unit is also adapted to control the image sensor to acquire image information from the user's eye for performing a gaze tracking of the user's eye.

Abstract: An imaging apparatus includes a first holding circuit, a second holding circuit, and a calculator. The first holding circuit is configured to hold and output a logical value based on a logical value supplied from an address decoder. The second holding circuit is configured to hold and output a logical value based on the logical value output from the first holding circuit. The calculator is configured to receive the logical values supplied from the first and second holding circuits and perform a logical operation for generating a driving signal.

Abstract: A substrate has a first surface and a second surface facing each other. A photoelectric conversion region includes a plurality of photoelectric conversion devices provided in the substrate. An interlayered insulating layer is provided on the first surface of the substrate. A plurality of wires is provided on the interlayered insulating layer. An inter-wire insulating layer covers the plurality of wires. A plurality of micro lenses is provided on the second surface of the substrate. A grid pattern is provided in at least one of the interlayered insulating layer and the inter-wire insulating layer. The grid pattern, when viewed in a plan view, overlaps a region between two adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices.

Abstract: The present specification describes a method for determining the distance of an object from the tip of an endoscope during an endoscopic procedure, wherein at least one lens is configured to converge light from outside the tip onto a sensor that includes a plurality of photodiodes a portion of which are adjacent pairs of photodiodes configured to be phase detection pixels. The method includes receiving light into each adjacent pair of photodiodes, wherein said light is reflected off a surface of said object; determining a first response curve to said light for a first photodiode of said adjacent pair of photodiodes and a second response curve to said light for a second photodiode of said adjacent pair of photodiodes; identifying an intersection between the first response curve and the second response curve; and using data derived from said intersection to determine said distance to the object.

Abstract: An organic light-emitting display device. A substrate is divided into a plurality of subpixels generating different colors of light. A light leakage prevention layer is disposed on a portion of the substrate corresponding to a light-emitting area of at least one subpixel of the plurality of subpixels. An overcoat layer is disposed on a portion of the substrate corresponding to at least one subpixel of the plurality of subpixels, and includes microlenses having a plurality of concave portions or a plurality of convex portions. An organic electroluminescent device is disposed on the overcoat layer.

Abstract: A photodiode produces photogenerated charges in response to exposure to light. An integration period collects the photogenerated charges. Collected photogenerated charges in excess of an overflow threshold are passed to an overflow sense node. Remaining collected photogenerated charges are passed to a sense node. A first signal representing the overflow photogenerated charges is read from the overflow sense node. A second signal representing the remaining photogenerated charges is read from the sense node.

Abstract: An image-capturing device includes an image sensor. The image sensor includes an upper layer pixel group and a lower layer pixel group that receives the light fluxes from the subject that have passed through each pixel in the upper layer pixel group. The lower layer pixel group includes fourth, fifth and sixth pixels having fourth, fifth and sixth spectral sensitivities, respectively, that are complementary to first, second, and third spectral sensitivities, respectively, of the upper layer pixel group, being arranged in a two-dimensional pattern. Positions of first, second and third pixels in the upper layer pixel group and positions of the fourth, fifth and sixth pixels in the lower layer pixel group are determined such that the fourth, fifth and sixth pixels receive light fluxes that pass through the first, second and third pixels, respectively.

Abstract: Semiconductor devices with duplicated die bond pads and associated device packages and methods of manufacture are disclosed herein. In one embodiment, a semiconductor device package includes a plurality of package contacts and a semiconductor die having a plurality of first die bond pads, a plurality of second die bond pads, and a plurality of duplicate die bond pads having the same pin assignments as the first die bond pads. The semiconductor die further includes an integrated circuit operably coupled to the package contacts via the plurality of first die bond pads and either the second die bond pads or the duplicate die bond pads, but not both. The integrated circuit is configured to be programmed into one of (1) a first pad state in which the first and second die bond pads are enabled for use with the package contacts and (2) a second pad state in which the first and duplicate die bond pads are enabled for use with the package contacts.

Abstract: The present technology relates to an image pickup device and an electronic apparatus capable of preventing degradation of the picture quality. A plurality of current sources can be selectively connected to an output terminal for outputting a reference signal having a level that varies, and a plurality of terminating resistors are connected to the output terminal. The terminating resistors that are to supply current of current sources that are connected to the output terminal are connected by a plurality of switches, and current of current sources that are not connected to the output terminal is supplied to the switches. The present technology can be applied, for example, to image pickup devices that perform AD conversion using a reference signal and so forth.

Abstract: An image sensor according to an embodiment may include a plurality of pixels. Each pixel of the plurality of pixels may include first, second, third and fourth photodiodes configured to convert light into an electric signal, and an electric circuit configured to add at least two of the electrical signals converted respectively by the first, second, third and fourth photodiodes and then output the added signals. An electronic device according to an embodiment may include the image sensor. The image sensor and the electronic device may offer an auto focusing function by controlling signals converted by and outputted from the plurality of photodiodes. Other various embodiments are possible.

Abstract: A time domain A/D converter group includes a plurality of individual A/D converters, each of the individual A/D converters is connected to a reference signal generation circuit to generate a first reference signal for sweeping in a full scale range and a second reference signal for repeating plurality of times to sweep in a limited voltage range, and each of the individual A/D converters includes a reference voltage selection circuit for switching the first reference signal or the second reference signal, a comparator for comparing an input signal with the first reference signal or the second reference signal, for generating a comparison output signal, an internal A/D converter for performing an A/D conversion using the comparison output signal from the comparator, and an accumulation adder-subtractor for outputting an average signal of A/D conversion values obtained from the A/D conversion when the second reference signal is selected.

Abstract: The present technology relates to an image sensor capable of improving a reading speed of signals of a plurality of same-color pixels that shares floating diffusion (FD), a method of reading control, and an electronic device. After resetting the FD, the image sensor transfers to the FD an electric charge of a first pixel. The image sensor then transfers an electric charge of a second pixel to the FD. In addition, the image sensor performs A/D conversion of a signal level of the first pixel by an A/D converter in accordance with a clock signal of a first frequency, and performs A/D conversion of a signal level of the second pixel by the A/D converter in accordance with a clock signal of a second frequency obtained by dividing the first frequency by a predetermined division ratio. The present technology is applicable to CMOS image sensors.

Abstract: An imaging device including a board section on which imaging element is loaded, a first housing section for fixing board section from a surface on which imaging element is loaded; a second housing section for fixing board section from a surface opposite to the surface on which imaging element is loaded; and a lens section attached to the first housing section side; and the first housing section and the second housing section are fixed by attachment members so as to sandwich board section. The first housing section may be configured from board fixing member for fixing board section, and the lens attachment member for attaching lens section that is fixed to board fixing member in a positionally adjustable manner.

Abstract: The present technology relates to an image sensor and an electronic apparatus which enable higher-quality images to be obtained. Provided is an image sensor including a plurality of pixels, each pixel including one on-chip lens, and a plurality of photoelectric conversion layers formed below the on-chip lens. Each of at least two of the plurality of photoelectric conversion layers is split, partially formed, or partially shielded from light with respect to a light-receiving surface. The pixels are phase difference detection pixels for performing AF by phase difference detection or imaging pixels for generating an image. The present technology can be applied to a CMOS image sensor, for example.

Abstract: A time domain A/D converter group includes a plurality of individual A/D converters, each of the individual A/D converters is connected to a reference signal generation circuit to generate a first reference signal for sweeping in a full scale range and a second reference signal for repeating plurality of times to sweep in a limited voltage range, and each of the individual A/D converters includes a reference voltage selection circuit for switching the first reference signal or the second reference signal, a comparator for comparing an input signal with the first reference signal or the second reference signal, for generating a comparison output signal, an internal A/D converter for performing an A/D conversion using the comparison output signal from the comparator, and an accumulation adder-subtractor for outputting an average signal of A/D conversion values obtained from the A/D conversion when the second reference signal is selected.

Abstract: The present invention provides a solid-state imaging device including a pad capable of reducing inferior connection with an external terminal. The solid-state imaging device includes a first substrate provided, on its front face, with photoelectric conversion elements, a first wiring structure, a second substrate provided, on its front face, with at least a part of peripheral circuits, and a second wiring structure. The first substrate, the first wiring structure, the second wiring structure, and the second substrate are provided in this order. The first wiring structure includes a wiring layer including wirings made mainly of copper. The second wiring structure includes a wiring layer including wirings made mainly of copper. Wirings made mainly of copper in the first wiring structure are bonded with wirings made mainly of copper in the second wiring structure. The solid-state imaging device includes a pad formed of a conductive element made mainly of aluminum.

Abstract: An OLED display device according to an embodiment includes a substrate; a black matrix, in which openings are formed, disposed on the substrate; a color filter layer disposed in the openings; and a transparent insulation layer disposed on the substrate, which is provided with the color filter layer, and configured to include optical patterns which are arranged in a shape of plural polygons. As such, the OLED display device can enhance an output efficiency of light.

Abstract: A light-emitting element mounting substrate is provided.

Abstract: Some embodiments provide an image sensor pixel comprising a junction field effect transistor (JFET) and a floating diffusion configured to act as the gate of the JFET. An image sensor may comprise a plurality of pixels, at least one pixel comprising a floating diffusion region formed in a semiconductor substrate, a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion, and a JFET having (i) a source and a drain coupled by a channel region, and (ii) a gate comprising the floating diffusion region.

Abstract: An imaging device includes: a pixel array section having an array of pixels, each of which has a photoelectric converting device and outputs an electric signal according to an input photon; a sense circuit section having a plurality of sensor circuits each of which makes binary decision on whether there is a photon input to a pixel in a predetermined period upon reception of the electric signal therefrom; and a decision result IC section which integrates decision results from the sense circuits, pixel by pixel or for each group of pixels, multiple times to generate imaged data with a gradation, the decision result IC section including a count circuit which performs a count process to integrate the decision results from the sense circuits, and a memory for storing a counting result for each pixel from the count circuit, the sense circuits sharing the count circuit for integrating the decision results.

Abstract: An image sensor system including: a timing control circuit, an image sensor and a modulation circuit. The timing control circuit is arranged to determine if a coding condition is fit according to an input signal and generate a control signal when the coding condition is fit, wherein the input signal is generated in response to each pulse of a clock signal. The image sensor is coupled to the timing control circuit, and the image sensor includes a plurality of pixels, wherein one of the plurality of pixels receives the control signal from the timing control circuit and outputs a sensing signal. The modulation circuit is coupled to the image sensor and arranged to receive the sensing signal and generate an output signal according to the sensing signal, wherein a frequency of the output signal is different from a frequency of the sensing signal.

Abstract: The invention concerns a structure of a readout circuit, formed on a semiconductor substrate (1) of a first type, and intended to measure the charges received from an external charge source (2) external to the substrate (1) according to successive charge integration cycles, said structure comprising: an injection diode configured to inject, into the substrate (1), the charges received from the external charge source (2), a collector diode suitable for collecting, in the substrate (1), at least a portion of the charges injected by the injection diode and for accumulating said charges during an integration cycle, a charge recovery structure (7), configured to recover the charges accumulated in said collector diode, means for initializing the charge recovery structure (7) at the end of each integration cycle, by restoring the electrical potential of said charge recovery structure to an initial potential.

Abstract: An endoscopic device includes: a light source unit configured to repeat for every frame period, an operation of emitting illumination light during a front period and turning off the illumination light during a back period of the frame period; a buffer memory mounted in an endoscopic scope and configured to store image information of a frame image signal output from an image capturing unit; and an information transmitting unit configured to read out the image information of the frame image signal from the buffer memory and transmit the image information to an image processing unit, in which the information transmitting unit reads out the image information of the frame image signal from the buffer memory within the frame period.

Abstract: The present technology relates to a solid-state imaging device, an imaging apparatus, and an electronic apparatus, which can suppress a color mixture without lowering the sensitivity. In pixels (red pixels (R pixels), green pixels (G pixels), and blue pixels (B pixels)) other than W pixels and adjacent to the W pixels, light shielding films thicker than those of the W pixels are formed at positions adjacent to the W pixels. Furthermore, the shorter the wavelength, the thicker the light shielding film in the RGB pixels other than the W pixels. The present technology is applicable to the solid-state imaging device.

Abstract: A vehicle image capture and labeling system operates to enable a user to capture vehicle photos, pictures, and/or images that are automatically labeled, i.e., annotated. In particular, the captured vehicle photos, pictures, or images are automatically labeled with certain vehicle identifier information, like a vehicle identification number (VIN), and pose information, that identifies a portion or view of the vehicle depicted within the image of the vehicle. The vehicle images may also be automatically labeled with one or more other image attributes or indicia, such as geospatial information corresponding to a location at which the photo or image was captured (e.g., global positioning system (GPS) data), time and date of image capture data, etc. The captured vehicle image and its label(s) may then be stored and used by other applications such as vehicle insurance claim applications, automobile repair estimate applications, etc.

Abstract: An optical lens includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. The first lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof. The second lens element has refractive power. The third lens element has positive refractive power. The fourth lens element with positive refractive power has an image-side surface being convex in a paraxial region thereof. The fifth lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof and including one convex shape in an off-axis region thereof. The sixth lens element with refractive power has an image-side surface being concave in a paraxial region thereof and including one convex shape in an off-axis region thereof.

Abstract: A camera lens includes, in sequence from an object side to an image side: a first lens having a negative refractive power; a second lens having a refractive power; a third lens having a positive refractive power, an image-side surface of the third lens being a concave surface; a fourth lens having a refractive power; a fifth lens having a refractive power; a sixth lens having a refractive power; and a seventh lens having a refractive power, an object-side surface and an image-side surface of the seventh lens each being an aspheric surface. The camera lens satisfies a conditional expression: ?2<f1/f<?1.4, in which, f1 denotes an effective focal length of the first lens and f denotes an effective focal length of the camera lens.

Abstract: An imaging device includes a pixel circuit region that includes a plurality of pixel circuits arranged in an array therein and a plurality of light guide portions. The imaging device also includes a peripheral circuit region that is positioned at a periphery of the pixel circuit region and includes a peripheral circuit. The imaging device also includes an intermediate region that is positioned between the pixel circuit region and the peripheral circuit region, forms a boundary with the pixel circuit region and the peripheral circuit region, and includes a plurality of dummy light guide portions and a plurality of contacts through which a reference potential of the plurality of pixel circuits is supplied.

Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.

Abstract: The present technology relates to a solid-state imaging device, a method of driving the solid-state imaging device, and an electronic apparatus by which pixels can be read effectively. The solid-state imaging device includes a readout unit that performs a common-source operation or a source follower operation with respect to pixels to read a signal for each column. According to a level of illumination, the readout unit performs a common-source readout operation to reset a floating diffusion region and read an electric charge transferred from a photoelectric transducer and held in the floating diffusion region, and performs a source follower readout operation to reset the floating diffusion region and read the electric charge transferred from the photoelectric transducer and held in the floating diffusion region. The present technology is applicable to a solid-state imaging device such as a CMOS image sensor.

Abstract: An imaging control apparatus for achieving proper image control such as focusing control is provided. The imaging control apparatus includes a detection control unit, an image correction unit, and a display control unit. The detection control unit controls detection on the basis of a detection area corresponding to a predetermined area in an object image acquired by an image sensor. The image correction unit corrects, on the basis of lens information relating to an image-pickup lens, the object image displayed on a screen. The display control unit displays, on the basis of the detection area and the lens information, a detection area display at a predetermined position on the screen, the detection area display representing the detection area.

Abstract: Embodiments of the present application disclose methods and apparatus for control of light field capture. A depth range of a first zone, which is at least a part of a scene to be shot, is acquired. An object distance adjustment range from a pixel point of at least one imaging zone to a reference point of a sub-lens is determined according to the acquired depth range. The at least one imaging zone is an imaging zone that affects light field capture of the first zone in an image sensor of a light field camera. The sub-lens corresponds to the at least one imaging zone in a sub-lens array of the light field camera. A bending degree of the at least one imaging zone is adjusted according to the object distance adjustment range. After being adjusted, the image sensor captures the light field emanating from the scene to be shot.

Abstract: An image sensor comprises: a plurality of pixels; a first reference signal generator configured to output a first reference signal whose signal level changes with time; a second reference signal generator configured to output a second reference signal whose signal level changes with time, a rate of change of the signal level of the second reference signal being larger than that of the first reference signal; an analog-to-digital converter configured to perform an analog-digital conversion of a pixel signal output from each of the plurality of pixels using the first reference signal or the second reference signal selected in accordance with a magnitude of the pixel signal, wherein the plurality of pixels and the first reference signal generator are arranged in a first chip, and the second reference signal generator is arranged in a second chip.

Abstract: An image sensor includes: first pixels, each of which receives a pair of light fluxes and outputs a pair of first analog signals; an A/D conversion unit that converts each of pairs of first analog signals to a pair of first digital signals; a digital adder unit that generates digital sum signals each by adding together the pair of first digital signals among pairs of first digital signals; a first output unit that outputs pairs of first digital signals to an external recipient; and a second output unit that outputs the digital sum signals to an external recipient.

Abstract: Disclosed herein is an electronic device including an integrated circuit substrate, with a pixel array area within the integrated circuit substrate. A first deep trench isolation structure is formed in the integrated circuit substrate about a perimeter of the pixel array area. First, second, third, and fourth pixels are within the pixel array area and spaced apart from one another. A storage capacitor area is within the integrated circuit substrate and interior to the first deep trench isolation structure. A second deep trench isolation structure is formed in the integrated circuit substrate about a perimeter of the storage capacitor area. The second deep trench isolation structure may serve to electrically isolate the storage capacitor area from the first, second, third, and fourth pixels.

Abstract: An endoscope includes, in a tip portion of an insertion unit: an image sensor having a photodetecting surface as defined herein; an imaging optical system as defined herein; a holding frame as defined herein; and a tip portion of a treatment tool channel as defined herein, and, in a cross section taken perpendicularly to the optical axis, a thickness, on a first axis that intersects the optical axis and a center of the treatment tool channel, of frame wall portions, located on two respective sides of the optical axis and intersecting the first axis, of at least a portion of the holding frame is smaller than a thickness, on a second axis that is perpendicular to the optical axis and the first axis, of frame wall portions, located on two respective sides of the optical axis and intersecting the second axis, of the at least portion of the holding frame.

Abstract: An image sensor module is provided. The image sensor module includes a printed circuit board (PCB), an image sensor chip disposed on a first plane of the PCB and electrically connected to the PCB, and an image signal processing chip disposed on the first plane of the PCB and electrically connected to the PCB. An aspect ratio of the image signal processing chip is at least two times greater than an aspect ratio of the image sensor chip. A minimum feature size of a metal line implemented in the image sensor chip is at least 1.5 times greater than a minimum feature size of a metal line implemented in the image signal processing chip.

Abstract: The present disclosure relates to a solid-state image pickup element, an image pickup module and electronic equipment configured to avoid large scaling of an image pickup element caused by an improvement in functions thereof. The solid-state image pickup element is configured with a lamination of an image sensor substrate on which a plurality of pixels is arranged on a surface of a sensor, and a signal processing substrate in which signal processing of an image signal output from the image sensor substrate is executed. The signal processing substrate has an electronic blur correction processing unit, a first connection unit that connects with an optical blur correction processing unit, and a second connection unit that connects with a gyro sensor which detects a blur generated in an image. At least a part of signals passed between the gyro sensor and the optical blur correction processing unit passes through the signal processing substrate.

Abstract: Provided are a comparison device capable of achieving a small area by using one small sampling capacitor for an input terminal and improving linearity by using a fixed reference voltage and a CMOS image sensor using the same. The comparison device may include a comparator configured to compare a pixel signal inputted through a positive input terminal with a ramp signal, a first sampling capacitor configured to be provided between an input terminal of the ramp signal and the positive input terminal of the comparator, a sampling switch configured to be provided between an output terminal of the comparator and a negative input terminal of the comparator, and a second sampling capacitor configured to be provided between a ground terminal and the negative input terminal of the comparator.

Abstract: An image pickup apparatus includes: an image pickup chip including a light receiving section and electrode pads, on a first main face, and a plurality of connection electrodes, each of which is connected to each of the electrode pads via each of a plurality of through-hole interconnections, on a second main face; a transparent cover glass having a larger plan-view dimension than the image pickup chip; a transparent adhesive layer that bonds the first main face of the image pickup chip and the cover glass; and a sealing member that covers a side face of the image pickup chip and a side face of the adhesive layer, and is made of an insulating material having a same plan-view dimension as the cover glass.

Abstract: An apparatus includes a complementary metal oxide semiconductor (CMOS) image sensor, an infrared light generating circuit, and a processor circuit. The CMOS image sensor includes a plurality of picture elements, where light integration begins on all of the picture elements simultaneously in response to a first control signal. A duration, an intensity, or both a duration and an intensity of infrared illumination produced by the infrared light generating circuit is controlled by a second control signal. The processor circuit is enabled to generate the first control signal and the second control signal. A period of the infrared illumination is shorter than an integration period of the CMOS image sensor.

Abstract: Embodiments of the present application disclose various image capture control methods and apparatuses. One of the image capture control methods comprises: determining a first zone as an allowable image blur zone, the first zone being a part of a shooting scene; determining a first imaging region that corresponds to the allowable image blur zone in an image sensor; adjusting a first pixel density distribution of the first image sensor, to cause the first pixel density of the imaging region to be lower than a second pixel density of a second imaging region in the image sensor after being adjusted; and performing, by using the image sensor after being adjusted, image capture on the shooting scene.

Abstract: A focus adjustment device comprising: a first detector 221 which detects a focused state by a contrast detection system; second detectors 222a, 222b which detect a focused state by a phase difference detection system; and a control unit 21 which controls the first detector 221 and second detectors 222a, 222b so as to detect the focused state by the second detectors 222a, 222b when detecting the focused state by the first detector 221.

Abstract: In a pixel array within an integrated-circuit image sensor, a pixel (870) includes a photodetector (260) and floating diffusion (262) formed within a substrate. First (881) and second (883) gate elements are disposed adjacent one another over a region (885) of the substrate between the photodetector and the floating diffusion and coupled respectively to a row line (TGr) that extends in a row direction within the pixel array and a column line (TGc) that extends in a column direction within the pixel array.

Abstract: The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.