Abstract: A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition.

Abstract: Systems and methods for ALD thin film deposition include a mechanism for removing excess non-chemisorbed precursors from the surface of a substrate in a translation-based process involving multiple separate precursor zones. Excess precursor removal mechanisms according to the present disclosure may introduce localized high temperature conditions, high energy conditions, or azeotropes of the excess precursor, to liberate the excess precursor before it reaches a separate precursor zone, thereby inhibiting CVD deposition from occurring without causing heat-induced degradation of the substrate.

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.

Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.

Abstract: A method for making polycrystalline silicon from a gas comprising at least one silicon precursor compound is disclosed. The method can be effected from a gas comprising a polycrystalline silicon precursor compound in a chemical vapor deposition system by establishing a first flow pattern of the gas in a chemical vapor deposition reaction chamber, promoting reaction of at least a portion of the at least one precursor compound from the gas having the first flow pattern into polycrystalline silicon, establishing a second flow pattern of the gas in the reaction chamber, and promoting reaction of at least a portion of the at least one precursor compound from the gas having the second flow pattern into polycrystalline silicon.

Abstract: A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate.

Abstract: A wafer carrier includes a body defining a central axis, a generally planar top surface perpendicular to the central axis, and pockets recessed below the top surface for receiving wafers. The body can include a lip projecting upwardly around the periphery of the top surface. The lip can define a lip surface sloping upwardly from the planar top surface in a radially outward direction away from the central axis. The body can be adapted for mounting on a spindle of a processing apparatus so that the central axis of the body is coaxial with the spindle. The lip can improve the pattern of gas flow over the top surface of the wafer carrier.

Abstract: Methods are provided herein for forming metal oxide thin films by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures such that the thin film is crystalline as deposited. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Abstract: In an embodiment, a method for manufacturing a thin layer chromatography (“TLC”) plate is disclosed. The method includes forming a layer of elongated nanostructures (e.g., carbon nanotubes), and at least partially coating the elongated nanostructures with a coating. The coating includes a stationary phase and/or precursor of a stationary phase for use in chromatography. The stationary phase may be functionalized with hydroxyl groups by exposure to acidified water vapor or immersion in a concentrated acid bath (e.g., HCl and methanol). At least a portion of the elongated nanostructures may be removed after being coated. Embodiments for TLC plates and related methods are also disclosed.

Abstract: Various embodiments include apparatus and method having a heat source, a thermal management device, and an interface disposed between the thermal management device and the heat source. The interface includes nanostructures to facilitate heat transfer and adhesion between the heat source and the thermal management device.

Abstract: A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.

Abstract: A method of introducing gasses through a gas distribution system into a reactor involves flowing the gasses through at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece. During different time intervals, a purge gas and different reactive precursors are flowed into the reactor from different ones of the gas source orifice arrays. One of the precursors may be associated with a soft saturating atomic layer deposition half reaction and another of the precursors associated with a strongly saturating atomic layer deposition half reaction. An upper one of the gas source orifice arrays may be a relatively planar gas orifice array.

Abstract: A first substrate 16 has a source material forming surface on which a plurality of source materials for forming a polymerized film is formed in a predetermined pattern, and a second substrate 15 has a film forming surface on which the polymerized film will be formed. Here, the first substrate 16 and the second substrate 15 are installed in a processing chamber 2 such that the source material forming surface and the film forming surface face each other. Then, the inside of the processing chamber 2 is maintained under a vacuum atmosphere, and the first substrate 16 is heated to a first temperature at which the source materials on the source material forming surface are evaporated and the second substrate 15 is heated to a second temperature at which the source materials cause polymerization reaction on the film forming surface.

Abstract: A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.

Abstract: A method of modifying a substrate for deposition of charged particles thereon, the method comprising the steps of: providing a substrate that is incapable of bonding to a polyelectrolyte coating that has a charge that is opposite to the charge of the particles that are to be deposited thereon; modifying the surface of the substrate to provide a layer of silicon thereon or therein; and coating the silicon layered surface of the substrate with the polyelectrolyte coating, the polyelectrolyte coating containing functional groups that are capable of forming bonds with said silicon layer and wherein said polyelectrolyte coating enables a substantially even distribution of said charged particles to be deposited thereon.

Abstract: A thin film formation method is used for forming a thin film by providing a conductance valve on an exhaust path connecting a depressurizable processing chamber and a vacuum pump, arranging a processing object substrate inside the processing chamber, performing once or plural times a cycle including a first step of supplying a first reactive gas and a second step of supplying a second reactive gas into the processing chamber during a film formation processing period to cause a chemical reaction between the first reactive gas and the second reactive gas, and using the chemical reaction to form the thin film on the substrate.

Abstract: Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be structured as one or more monolayers. The gallium lanthanide oxide film may be formed using atomic layer deposition.

Abstract: This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: An isotope-doped nano-structure of an element is provided. The isotope-doped nano-structure includes at least one isotope-doped nano-structure segment having at least two isotopes of the element, and the at least two isotopes of the element are mixed uniformly in a certain proportion. The present disclosure also provides a method for making the isotope-doped nano-structures, and a labeling method using the isotope-doped nano-structures.

Abstract: A heat-dissipation unit coated with oxidation-resistant nano thin film includes a metal main body having a heat-absorbing portion and a heat-dissipating portion, both of which are coated with at least a nano metal compound thin film. To form the nano metal compound thin film on the heat-dissipation unit, first form at least a nano compound coating on an outer surface of the heat-dissipation unit, and then supply a reduction gas into a high-temperature environment to perform a heat treatment and a reduction process on the heat-dissipation unit and the nano compound coating thereof, and finally, a nano metal compound thin film is formed on the surface of the heat-dissipation unit after completion of the heat treatment and the reduction process. With the nano metal compound thin film, the heat-dissipation unit is protected against formation of oxide on its surface and accordingly against occurrence of increased thermal resistance thereof.

Abstract: A multi-layer thin film stack, particularly suitable as a component of a solar cell, is deposited on a transparent dielectric substrate. The multi-layer film stack comprises a transparent electrically conductive metal oxide layer deposited over the dielectric substrate, the conductive metal oxide layer having a refractive index less than 2.0, a light transmittance optimizing interlayer having a refractive index between 2.3 and 3.5, deposited over the electrically conductive metal oxide layer, and a silicon layer having a refractive index of at least 4.5 deposited over the light transmittance optimizing interlayer. The film stack can be deposited by any suitable method, but deposition of each of these layers by atmospheric chemical vapor deposition is preferred.

Abstract: The present invention relates to ceramic cutting tools, such as, an aluminum oxide with zirconium oxide ceramic cutting tool with diffusion bonding enhanced layer and CVD coatings, particularly useful for machining modern metal materials. The method comprises a chemical reaction with a mixture including nitrogen and aluminum chloride introduced to form a diffusion bonding enhanced layer between the ceramic substrate and the CVD coatings. Thus formed diffusion bonding enhanced layer is highly adherent to the aluminum oxide with zirconium oxide ceramic substrate and significantly enhances the CVD coating properties, thus improving the machining performance in terms of the tool life of zirconium-based aluminum oxide with zirconium oxide ceramic cutting tools.

Abstract: A method for coating a tool or tool part, includes providing a base structure of the tool or the tool part at a temperature of 850° C. to 950° C. and applying at least one layer to the base structure. One or more layers of the at least one layer is formed of a metal carbonitride of composed of at least one of titanium, zirconium, hafnium, vanadium, niobium, tantalum and chromium. The one or more layers of the at least one layer is deposited by a deposition of a gas containing methane, nitrogen and at least one metal compound. After beginning the applying, the temperature is increased by at least 40° C. to an increased temperature and the deposition is continued for a time at the increased temperature.

Abstract: This invention relates to compounds and compositions used to prepare semiconductor and optoelectronic materials and devices. This invention provides a range of compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to molecular precursor compounds, precursor materials and methods for preparing photovoltaic layers.

Abstract: Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.

Abstract: A method of growing a thin film comprises growing a thin film by conformally forming at least one layer over a substrate having structures extending from a surface of the substrate, whereby the or each layer is formed over the surface of the substrate and over the structures extending from the surface. The thickness of the conformal layer, or the sum of the thicknesses of the conformal layers, is at least half the average spacing of the structures, and; at least one of the height of the structures, the average spacing of the structures and the size of the smallest dimension of the structures is set so as to provide an enhanced growth rate for the or each conformal layer (compared to the growth rate over a planar substrate).

Abstract: The invention relates to a sliding element that includes a carrier body and a multiple layer. The multiple layer includes a running layer and a protective layer, in which the protective layer has a hardness HUplast of greater than 5 GPa, and the hardness of the running layer is less than 400 HV.

Abstract: A thin film deposition system and a method for deposit a thin film are disclosed. A thin film deposition system includes a source material feeder configured to feed source material, a source gas feeder comprising a vaporizer connected with the source material feeder to evaporate the source material fed by the source material feeder, a thin film deposition device connected with the source gas feeder to deposit the evaporated source material fed by the source gas feeder on a treatment object, vaporizer exhaustion unit having an end connected with the vaporizer to ventilate an inside of the vaporizer, and a pressure adjuster connected with the exhaustion tube to adjust the pressure of the exhaustion tube to control the velocity of source material fed to the vaporizer.

Abstract: This invention relates to a vapor or liquid phase reagent dispensing apparatus having a diptube and also a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.

Abstract: The invention includes a method of coating a substrate with a plasma etch-resistant layer that exhibits reduced particulation comprising applying an coating layer to a substrate wherein coating layer has a thickness of about 20 microns or less and wherein the coating layer, after exposure to a fluorine based plasma for an amount of time, is substantially free of any cracks or fissures that span the cross section of the coating layer. A coated substrate prepared by the methods described. Also included in the invention are coated substrates for use as a structural element in a fluorine-based semiconductor wafer processing protocol, wherein the coating is a coating layer having a thickness of about 20 microns or less and wherein the coating layer, after exposure to a fluorine based plasma for an amount of time, is substantially free of any cracks or fissures that span the cross section of the coating layer and exhibits reduced particulation.

Abstract: A method for reducing a dielectric constant of a cured film, includes: introducing a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is place; increasing a ratio of B/(A+B) used as a parameter for controlling a dielectric constant of a cured film, by a degree substantially or nearly in proportion to a target decrease of dielectric constant of a cured film; applying RF power to the reaction space, thereby depositing a film on the substrate by plasma CVD; and curing the film to remove the porogen material, thereby forming pores in the cured film.

Abstract: Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

Abstract: An organic glass for automobile is provided which has excellent weatherability, wear-resistance and abrasion-resistance, and which can be mass-produced by a simple and inexpensive process. The organic glass comprises a transparent resin base plate 12 and a hard coat layer 14 formed on at least one surface of the resin base plate. The hard coat layer includes an organic thin film 16 formed by vacuum deposition polymerization.

Abstract: An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

Abstract: The invention relates to a chemical reactor with a nanometric superstructure, comprising at least one member wherein at least one reaction chamber is arranged, and said reaction chamber being filled at least partially with a high specific surface area material having a specific surface area greater than 5 m2/g, and characterised in that said high specific surface area material is selected from nanotubes or nanofibres. These nanotubes or nanofibres are preferably selected in the group consisting of carbon nanofibres or nanotubes, ?-SiC nanofibres or nanotubes, TiO2 nanofibres or nanotubes. They may be deposited on an intermediate structure selected in the group consisting of glass fibres, carbon fibres, SiC foams, carbon foams, alveolar ?-SiC foams, said intermediate structure filling the reaction chamber of said reactor at least partially.

Abstract: In various embodiments, composite materials containing a ceramic matrix and a carbon nanotube-infused fiber material are described herein. Illustrative ceramic matrices include, for example, binary, ternary and quaternary metal or non-metal borides, oxides, nitrides and carbides. The ceramic matrix can also be a cement. The fiber materials can be continuous or chopped fibers and include, for example, glass fibers, carbon fibers, metal fibers, ceramic fibers, organic fibers, silicon carbide fibers, boron carbide fibers, silicon nitride fibers and aluminum oxide fibers. The composite materials can further include a passivation layer overcoating at least the carbon nanotube-infused fiber material and, optionally, the plurality of carbon nanotubes. The fiber material can be distributed uniformly, non-uniformly or in a gradient manner in the ceramic matrix. Non-uniform distributions may be used to form impart different mechanical, electrical or thermal properties to different regions of the ceramic matrix.

Abstract: A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is soluble in an aqueous solution comprising at least 50 weight % water and has an acid content of less than 2.5 meq/g of polymer. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least 90% of the acid groups are neutralized. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: Methods for bonding include deposition an adhesion layer on at least one substrate using chemical vapor deposition. The two adhesion layers each have a reactive group that is complementary to the other, thus enabling strong adhesion between the bonded substrates. Devices include two substrates that can be adhered together by chemically depositing an adhesion layer on at least one substrate using chemical vapor deposition. The substrates each have a reactive group that is complementary to the other, thus enabling strong adhesion between the bonded substrates.

Abstract: An apparatus includes: a process chamber for treating a substrate; a susceptor in the process chamber; a supporting frame over the susceptor; and at least one wire connected to the supporting frame.

Abstract: A method is provided for producing germanium nanowires encapsulated within multi-walled carbon nanotubes. The method includes the steps of performing chemical vapor deposition using a combined germanium and carbon source having a general formula of GeR(4-x)Lx, where x=0, 1, 2, or 3; R is selected from a group consisting of alkyl, cycloalkyl or aryl and L=hydrogen, halide or alkoxide and growing germanium nanowires encapsulated within multi-walled carbon nanotubes on a substrate. A reaction product of that method or process is also provided.

Abstract: The invention discloses a composition comprising a hybrid composite organic-inorganic membrane. The hybrid organic-inorganic membrane according to the present invention may comprise an amorphous porous layer incorporating organic functionalities. The amorphous porous layer may be deposited on a porous alumina substrate by chemical vapor deposition (CVD). The amorphous porous layer may comprise a single top-layer (STL), multiple top-layers (MTL) or mixed top-layers (XTL). The substrate may comprise a single layer or multiple graded layers of alumina.

Abstract: A composite film comprising a polymeric substrate and a planarising coating layer wherein the surface of the planarised substrate exhibits an Ra value of less than 0.7 run and/or an Rq value of less than 0.9 nm, and wherein the composite film further comprises a gas-permeation barrier deposited by atomic layer deposition on a planarised surface of the substrate; an electronic device comprising said composite film; and processes for the production thereof.

Abstract: The present invention relates to a method of forming a metal-nitride film onto a surface of an object to be processed in a processing container in which a vacuum can be created. The method of the invention includes: a step of continuously supplying an inert gas into a processing container set at a low film-forming temperature; and a step of intermittently supplying a metal-source gas into the processing container, during the step of continuously supplying the inert gas. During the step of intermittently supplying the metal-source gas, a nitrogen-including reduction gas is supplied into the processing container at the same time that the metal-source gas is supplied, during a supply term of the metal-source gas. The nitrogen-including reduction gas is also supplied into the processing container for a term shorter than a non-supply term of the metal-source gas, during the non-supply term of the metal-source gas.

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract: What is described here is a method of producing a patterned coating by PECVD without additional production steps. The proposed method produces a moth-eye like macrostructure on a surface by direct deposition. Additionally, the macrostructure may be modulated by a microstructure with a surface texture in the subwavelength range. As a result, protective, antireflective coating comprising a carrier layer consisting of an optically transparent material, which, at least on one surface side, presents antireflective properties with respect the optical wavelengths of the radiation incident on the surface can be produced, as well as surface structures which are the basis for superhydrophobic surface properties.

Abstract: A gas supply device 3 includes a device body 31 forming a substantially conical gas-conducting space 32 for conducting gases therethrough from a diametrally reduced end 32a of the space 32 to a diametrally enlarged end 32b thereof, gas introduction ports 61a to 63a, 61b to 63b, and 64, each provided near the diametrally reduced end 32a of the gas-conducting space 32 in the device body 31 to introduce the gases into the gas-conducting space 32, and a plurality of partitioning members 41 to 46 provided in the gas-conducting space 32 of the device body 31 to partition the gas-conducting space 32 concentrically. The partitioning members 42 to 46 arranged adjacently to each other at a radially outer side of the gas-conducting space 32 are greater than the adjacently arranged partitioning members 41 to 45 at a radially inner side in dimensionally diverging rate per partitioning member.

Abstract: This disclosure relates to compositions that include (a) at least one substituted or unsubstituted cyclic alkene, and (b) an antioxidant composition including at least one compound of Formula (I): R1 through R4 in Formula (I) are described in the specification.

Abstract: A technique for forming an organic polymer thin film on a surface of a substrate with high film formation efficiency and excellent reproducibility and stability is provided. When a vacuum deposition polymerization for forming an organic polymer thin film is performed on a surface of a substrate 12 repeatedly, in which a plurality of kinds of monomers evaporated in a plurality of evaporation source containers 32a, 32b in vacuum state are introduced into a deposition chamber 10 in a vacuum state and polymerized on a surface of the substrate 12 arranged in the deposition chamber 10, each of the monomers in a liquid form is present in the evaporation source containers 32a, 32b in a constant amount every time, at the beginning of the evaporation operation of monomers.