Abstract: A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl4 are conducted to an apparatus which enables distillative purification of the condensate, and ii) non-condensing components are conducted to an adsorption or desorption unit; c) obtaining a first stream of non-condensing components purified by adsorption and containing hydrogen; and d) obtaining, during adsorption unit regeneration, a second stream of non-condensing components, containing SiCl4 which is then preferably supplied to a converter for conversion of SiCl4 to trichlorosilane.

Abstract: The present invention provides for a method and apparatus for the directed vapor deposition (DVD) on non-line of sight (NLOS) portions of a substrate. The method and apparatus includes evaporating a first material for deposition on to the substrate, the evaporating generating a plurality of vapor molecules. The method and apparatus therein provides for the insertion of a carrier gas and the direction of the vapor molecules to be deposited in NLOS regions of the substrate. One embodiment utilizes plasma activation to ionize the vapor particles and bias the substrate to attract the charged vapor molecules onto the NLOS portion. Another embodiment uses an inert gas as the carrier gas. Another embodiment includes pre-heating the carrier gas prior to its insertion into the deposition chamber. Whereby the varying embodiments and combinations herein improve NLOS DVD.

Abstract: A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.

Abstract: Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.

Abstract: Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase.

Abstract: A dual section module with mass flow controllers, for processing wafers, includes: dual process sections integrated together; at least one mass flow controller (MFC) each shared by the dual process sections and provided in a gas line branching into two gas lines, at a branching point, connected to the respective interiors of the dual process sections and arranged symmetrically between the dual process sections; and at least one mass flow controller (MFC) each unshared by the dual process sections and provided in a gas line connected to the interior of each dual process section.

Abstract: An object of the present invention is to provide a single-phase film of a metal sulfide with good quality, and a method for preparing a metal sulfide film at a low cost in a convenient manner. The present invention provides a preparation method of a metal sulfide film, comprising the steps of providing metal halide, such as iron halide (FeCl3, FeI3, FeBr3, FeCl2, FeI2 and FeBr2), as a first raw material and a thioamide compound, such as thioacetamide, as a second raw material, preferably vaporizing these raw materials and reacting them at atmospheric pressure; and a metal sulfide film prepared by this method.

Abstract: A system for forming one or more layers of material on one or more substrates is disclosed. The system includes a susceptor that rotates around a central susceptor axis. One or more holder gears are located on the susceptor. The holder gears may rotate around the central susceptor axis with the susceptor. A central gear engaged to the holder gears may cause the holder gears to rotate around holder axes of the respective holder gears while the holder gears rotate around the central susceptor axis. The susceptor and the central gear may rotate independently.

Abstract: A gas distribution structure for supplying reactant gases and purge gases to independent process cells to deposit thin films on separate regions of a substrate is described. Each process cell has an associated ring purge and exhaust manifold to prevent reactive gases from forming deposits on the surface of the wafer between the isolated regions. Each process cell has an associated showerhead for conveying the reactive gases to the substrate. The showerheads can be independently rotated to simulate the rotation parameter for the deposition process.

Abstract: Provided is a barrier laminate having higher barrier property. The barrier laminate has an organic layer obtained by curing a polymerizable composition comprising a compound represented by the following formula (1); wherein R1's represent a substituent, and R1's each may be the same or different to each other; n's are an integer of 0 to 5, and n's each may be the same or different to each other; provided that at least one of R1's comprises a polymerizable group.

Abstract: The present invention relates generally to methods for producing metallic products comprising a substrate and a metallic, external coating. In preferred embodiments, the metallic products are jewelry articles.

Abstract: The present invention relates generally to methods for producing a coated jewelry article or a coated component of a jewelry article, comprising a jewelry article or a component of a jewelry article, a first metallic coating, and a second metallic coating.

Abstract: Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium.

Abstract: Provided are a coated cutting tool having excellent wear resistance and excellent resistance to chipping as well as excellent fracture resistance such that the coated cutting tool is unlikely to cause backward movement of the tool edge position due to wear or chipping, and a method for producing the same. A coated cutting tool comprising a base material having a surface coated with a coating film, wherein the coating film comprises at least one layer comprised of a TiCN columnar crystal film, wherein the TiCN columnar crystal film has an average grain size of 0.05 to 0.5 ?m, as measured in the direction parallel to the surface of the base material, and exhibits an X-ray diffraction pattern having a peak at a diffraction angle 2? in the range of from 121.5 to 122.6° wherein the peak is ascribed to the (422) crystal facet of the TiCN columnar crystal as measured using CuK? radiation.

Abstract: The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III precursor having one or more gaseous gallium precursors as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber; and supplying sufficient energy to the gaseous gallium precursor(s) prior to their reacting so that substantially all such precursors are in their monomer forms. The system includes sources of the reactants, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their component monomers.

Abstract: A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

Abstract: The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. Novel silylantimony compounds are also disclosed.

Abstract: Disclosed is a substantially alternating copolymer that is conformal, hard, flexible, and has low oxygen permeability. Also disclosed is an iCVD-based method of coating a substrate with the substantially alternating copolymer.

Abstract: Provided is a method for moving, in a vacuum chamber carrying therein a fixedly-provided evaporation source, a substrate toward the evaporation source together with a mask closely attached to the substrate surface, and onto the surface substrate, evaporating a material vaporized in the evaporation source through an aperture formed to the mask. In this method of the invention, means for moving the substrate toward the evaporation source is provided with cooling means not to come in contact with but to be in proximity to a surface of the mask on the evaporation source side, and a cooling plate formed with an aperture proximal to the evaporation source is disposed. With such a configuration, the steam of the material coming from the evaporation source is directed to the mask and the substrate through the aperture of the cooling plate.

Abstract: The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.

Abstract: A film forming method for producing a barrier film for a semiconductor. A metallic material gas and a reactive gas are alternatively introduced into a vacuum chamber. A back-flow preventing gas and an auxiliary gas are also introduced into the vacuum chamber. The reactive gas and the auxiliary gas are moved with a flow of the back-flow preventing gas, and radicals are produced by being in contact with a catalytic material. The metallic material gas is not in contact with the catalytic material, and the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes.

Abstract: The present invention relates to pigments with improved and adjustable sparkling effect comprising A) a plate-like substrate of perlite coated with (a) dielectric material, and/or metal; and B) a plate-like substrate of mica, coated with (a) dielectric material, and/or a metal; and a process for their production and their use in paints, ink jet printing, for dyeing textiles, for pigmenting coatings (paints), printing inks, plastics, cosmetics, glazes for ceramics and glass. The pigments show an improved sparkle effect; in particular an attractive high sparkle intensity.

Abstract: A propeller shaft includes a first shaft having a yoke at one end, a second shaft slidably connected to the other end of the first shaft, and a surface treated member which is arranged at a connecting portion, at which the first shaft and the second shaft are connected to each other, and to which surface treatment for improving slidability of the second shaft with respect to the first shaft is applied. The surface treated member is formed by a substrate which is separate from the first shaft and the second shaft and to which the surface treatment has been applied. The surface treated member is arranged at the connecting portion, at which the first shaft and the second shaft are connected to each other, after the surface treatment is applied.

Abstract: An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

Abstract: A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.

Abstract: The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.

Abstract: A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.

Abstract: A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

Abstract: Disclosed are a photosensitive resin composition for a color filter and a color filter using the same. The photosensitive resin composition for a color filter may include (A) a copolymer including a structural unit represented by the following Chemical Formula 1, wherein the substituents of Chemical Formula 1 are the same as defined in the specification; (B) an acrylic-based photopolymerizable monomer; (C) a photopolymerization initiator; (D) a pigment; and (E) a solvent.

Abstract: The invention relates to a CVD reactor having a process chamber (1), the floor (3) of which is formed by a susceptor (2) for receiving substrates (4) to be coated with a layer and the ceiling (6) of which is formed by the underside of a gas inlet element (5) that has a multiplicity of gas inlet openings (13, 14) distributed uniformly over its entire surface, the gas inlet openings (13, 14) being divided into strip-like first and second gas inlet zones (11, 12) that run parallel to one another in a direction of extent, the gas inlet openings (13) of a first gas inlet zone (11) being connected to a common first process-gas feed line (9) for introducing a first process gas into the process chamber (1), the gas inlet openings (14) of a second gas inlet zone (12) being connected to a common first process-gas feed line (10), which is different from the first process-gas feed line (9), for introducing a second process gas into the process chamber (1), and the first and second gas inlet zones (11, 12) lying alternati

Abstract: This multilayer component (11) for encapsulating an element (12) which is sensitive to air and/or moisture comprises an organic polymer layer (1) and at least one barrier stack (2). The barrier stack (2) comprises at least three successive thin layers (21-23) having alternately lower and higher degrees of crystallinity, the ratio of the degree of crystallinity of a layer of higher degree of crystallinity to the degree of crystallinity of a layer of lower degree of crystallinity being greater than or equal to 1.1.

Abstract: This multilayer component (11) for encapsulating an element (12) which is sensitive to air and/or moisture comprises an organic polymer layer (1) and at least one barrier stack (2). The barrier stack (2) comprises at least one sequence of layers consisting of a retention layer (22) sandwiched between two high-activation-energy layers (21, 23), in which: for each of the two high-activation-energy layers (21, 23), the difference in activation energy for water vapor permeation between, on the one hand, a reference substrate coated with the high-activation-energy layer and, on the other hand, this same reference substrate when bare is greater than or equal to 20 kJ/mol; and the ratio of the effective water vapor diffusivity in the retention layer (22) on a reference substrate to the water vapor diffusivity in this same reference substrate when bare is strictly less than 0.1.

Abstract: There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.

Abstract: The present invention relates to a chemical vapor deposition coating, a chemical vapor deposition article, and a chemical vapor deposition method. The coating, article, and method involve thermal decomposition of dimethylsilane to achieve desired surface properties.

Abstract: A technique for effectively suppressing the generation of particles resulting from peeling-off of unnecessary films that have unavoidably adhered to the inner surface of the reaction tube of an ALD film-forming apparatus during a film formation process for forming a film on a semiconductor substrate. A precoating process utilizing ALD is performed to deposit a metal oxide film, e.g., an aluminum oxide film, onto the unnecessary films, in order to prevent peeling-off of the unnecessary films. Ozone is supplied, as a precoat gas, into the reaction tube during the precoating process by a nozzle of a different type and/or position from that of the nozzle for supplying ozone, as a film-forming gas, into the reaction tube during the film formation process.

Abstract: A method is disclosed for manufacturing one or more oxygen scavenging particles, wherein the particle(s) comprises an oxidizable metal particle, such as elemental iron; an acidifying electrolyte such as sodium or potassium bisulfate and optionally a water hydrolysable Lewis acid, such as aluminum chloride. The method comprises the step of coating the oxidizable particle with a first compound and then reacting the first compound with a second compound to form a third compound, wherein the third compound promotes the reaction of the oxidizable particle with oxygen.

Abstract: Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract: Disclosed are methods of purifying a ruthenium containing precursor by removing oxygen from the ruthenium containing precursor by flowing an inert gas through the ruthenium containing precursor. Also disclosed are methods of forming an improved ruthenium containing film using the purified ruthenium containing precursor.

Abstract: Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.

Abstract: A polymer film has a markedly improved resistance to erosion in the electrical field (so-called corona stability) when permanently subject to partial discharge.

Abstract: In the disclosed vapor deposition method, by using a structure wherein an inner diameter of a group-V source gas introduction piping is greater than an outer diameter a group-III source gas introduction piping, and the group-III source gas introduction piping is inserted one-to-one into the interior of the group-V source gas introduction piping, the group-III source gas piping is thereby prevented from being cooled by a cooling mechanism, and hardening of metallic materials upon the surface of the wall of the piping is alleviated. It is thus possible to provide a vapor deposition device, a vapor deposition method, and a semiconductor element manufacturing method, which are capable of efficaciously introducing easily hardening metallic materials into a reactor without the metallic materials adhering to a showerhead or a piping, and to carry out efficacious doping.

Abstract: A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.

Abstract: The invention relates to bodies coated with a hard material, comprising a multi-layer coating system containing at least one Ti1-xAlxN hard material coating and to a multi-stage CVD method for producing the bodies. The aim of the invention is to achieve excellent adhesion of the Ti1-xAlxN hard material coating in bodies coated with a hard material comprising a multi-layer coating system containing at least one Ti1-xAlxN hard material coating and a high degree of wear resistance. According to the invention, the bodies coated with a hard material comprising a multi-layer coating system containing at least one Ti1-xAlxN hard material coating are characterized by the following features: the coating system consists of a) a bonding coating applied to the body, consisting of TiN, Ti(C,N) or TiC; b) a phase gradient coating that is applied to the bonding coating; and c) the single or multi-phase Ti1-xAlxN hard material coating or coatings applied to the phase gradient coating.

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract: Disclosed are stabilized bicyclo[2.2.1]hepta-2,5-diene compositions and methods of making and using the same.

Abstract: A process for the application of layers composed of ceramic or organoceramic materials on surfaces of metals, semimetals or compounds thereof and also components or assemblies made of these materials by a chemical deposition process from the gas phase at atmospheric pressure or 30% below this and process temperatures during deposition below 500° C. The deposition process is carried out in one operation, wherein the reactive chemical substances and the precursors are homogeneously backmixed in the common gas space, and the average residence time as a ratio of volume of the gas space to gas throughput is matched to the rate-determining step of the catalyzed gas-phase reaction of the coating process so as to achieve a deposition rate of from 10 to 2000 nm per hour.

Abstract: In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film.