Abstract: Subject matter disclosed herein relates to memory operations regarding encoding program bits to be programmed into a memory array.

Abstract: A method for performing a holding operation to a semiconductor memory array having rows and columns of memory cells, includes: applying an electrical signal to buried regions of the memory cells, wherein each of the memory cells comprises a floating body region defining at least a portion of a surface of the memory cell, the floating body region having a first conductivity type; and wherein the buried region of each memory cell is located within the memory cell and located adjacent to the floating body region, the buried region having a second conductivity type.

Abstract: A method includes receiving a memory code identifying a number of logic zeroes and logic ones to be stored in a semiconductor memory, determining a number of bit cells of a first type that are to be coupled to a first bit line of the semiconductor memory from the memory code, and selecting a first keeper circuit from a plurality of keeper circuits based on the number of bit cells of the first type that are to be coupled to the first bit line. An electronic representation of a layout of the semiconductor memory is stored in a non-volatile machine readable storage medium.

Abstract: In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of first interconnects which extend in a first direction and are arranged in a second direction perpendicular to the first direction, a plurality of second interconnects which extend in the second direction and are arranged in the first direction, and memory cells formed in regions where the first wring lines and the second interconnects cross. The semiconductor memory device further includes a plurality of first drivers which apply voltages to the first interconnects, respectively, and a second driver which applies a voltage to the first drivers.

Abstract: A word line driver of a semiconductor memory includes logic circuitry for coupling a word line to a first node set at a first voltage level when the word line driver is in a first state or to a second node set at a second voltage level when the word line driver is in a second state. A capacitor is configured to be charged to a third voltage level that is greater than the first and second voltage levels. First and second transistors are configured to selectively couple the word line to the capacitor and to a third node set at a fourth voltage level when the word line driver is in a third state. The fourth voltage level is greater than the first voltage level and less than the second voltage level.

Abstract: Disclosed are methods and devices, among which is a device that includes a first semiconductor fin having a first gate, a second semiconductor fin adjacent the first semiconductor fin and having a second gate, and a third gate extending between the first semiconductor fin and the second semiconductor fin. In some embodiments, the third gate may not be electrically connected to the first gate or the second gate.

Abstract: In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.

Abstract: A system and method that includes a memory die, residing on a stacked memory, which is organized into a plurality of mats that include data. The system and method also includes an additional memory die, residing on the stacked memory, that is organized into an additional plurality of mats and connected to the memory die by a Through Silicon Vias (TSVs), the data to be transmitted along the TSVs.

Abstract: A memory device comprises memory elements that are arranged in an array. The array includes rows associated with wordlines and columns associated with bitlines. The memory elements in a row share a wordline and memory elements in a column share a bitline. For each wordline, a wordline driver circuit is associated with the wordline. The memory device comprises a boost circuit that has an output coupled to the wordline driver circuits. The boost circuit is configured to provide a negative voltage to the wordlines during a read operation of the memory device such that unselected wordlines are held at a negative voltage below a ground potential while a selected wordline is held at a supply voltage during the read operation.

Abstract: A system including a reference voltage module to select a first reference voltage between a first threshold voltage corresponding to a first state of a memory cell and a second threshold voltage corresponding to a second state of the memory cell, a second reference voltage less than the first reference voltage, and a third reference voltage greater than the first reference voltage. The system includes a read module to perform a first read operation to determine a state of the memory cell based on the first reference voltage, and in response to a first failure to decode data read from the memory cell in the first read operation, perform a second read operation to determine the state based on the second reference voltage and a third read operation to determine the state based on the third reference voltage.

Abstract: A resistance variable layer changes: to a second resistance state in such a manner that its resistance value stops decreasing when an interelectrode voltage reaches a negative first voltage; to a first resistance state in such a manner that its resistance value starts increasing when the interelectrode voltage reaches a positive second voltage which is equal in absolute value to the first voltage; to the first resistance state in such a manner that the resistance variable layer flows an interelectrode current such that the interelectrode voltage is maintained at a third voltage higher than the second voltage, when the interelectrode voltage reaches the third voltage; and to the first resistance state in such a manner that its resistance value stops increasing when the interelectrode current reaches a first current in a state where the interelectrode voltage is not lower than the second voltage and lower than the third voltage.

Abstract: Memories and methods for providing and receiving non-data signals at a signal node are disclosed. One such memory includes first and second signal nodes, and first and second signal buffer. The first signal buffer is configured to be operative responsive to a first data strobe signal and further configured to be operative responsive to a non-data signal. The second signal buffer is configured to be operative responsive to a second data strobe signal. An example first data strobe signal is a read data strobe signal provided by the memory. In another example, the first data strobe signal is a write data strobe signal received by the memory. Examples of non-data signals include a data mask signal, data valid signal, error correction signal, as well as other signals.

Abstract: A memory system comprises a multi-bit memory device and a memory controller that controls the multi-bit memory device. The memory system determines whether a requested program operation is a random program operation or a sequential program operation. Where the requested program operation is a random program operation, the memory controller controls the multi-bit memory device to perform operations according to a fine program close policy or a fine program open policy.

Abstract: An anti-fuse circuit including a programmable module, a read module, and a control module is provided. The programmable module has a plurality of data cells. The read module is coupled to the programmable module. During a normal operation, the read module distinguishes which one or more of the data cells are stressed. The control module is coupled to the programmable module. During a stress operation, the control module controls each stressed data cell to be coupled to a high voltage, a low voltage, and a control voltage. The first end of each stressed data cells is coupled to the low voltage, the second end of each stressed data cells is coupled to the high voltage, and the control end of each stressed data cells is coupled to the control voltage during the stress operation.

Abstract: Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions.

Abstract: A system and method for operating a bipolar memory cell array including a bidirectional access diode. The system includes a column voltage. The column voltage switch includes column voltages and an output electrically coupled to the bidirectional access diode. The column voltages include at least one write-one column voltage and at least one write-zero column voltage. The system also includes a row voltage switch. The row voltage switch includes row voltages and an output electrically coupled to the bidirectional access diode. The row voltages include at least one write-one row voltage and at least one write-zero row voltage. The system further includes a column decoder and a row decoder electrically coupled to a select line of the column voltage switch and row voltage switch, respectively. The system includes a write driver electrically coupled to the select lines of the row and column switches.

Abstract: To improve reading accuracy of a sense amplifier circuit and a semiconductor memory device. A sense amplifier circuit includes an N type FET which is a sensing transistor connected between a power supply and a ground via a data line that extends to a memory cell, a resistance element that is connected between a gate of the sensing transistor and the power supply, and a capacitance element that is connected between the gate of the sensing transistor and the ground.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array including blocks, each block being capable of executing a write, read, or erase operation independently of other blocks. A control portion is configured to execute the operation of a first block among the blocks in a first cycle, set a selection inhibited region within a range of a predetermined distance from the first block, until a temperature relaxation time for relaxing a temperature of the first block has elapsed, set a region except the selection inhibited region among the blocks as a second block, and execute the operation of the second block in a second cycle.

Abstract: The disclosure discloses a memory and a method of operating the same. The memory includes an array of memory cells including a plurality of memory cells with a common source, wherein each of the plurality of memory cells with a common source includes two sub-memory cells, each of the sub-memory cells corresponds to a bit line, and the respective bits are electrically independent. Each of the sub-memory cells in the memory according to the disclosure corresponds to a bit line, and the respective bit lines are electrically independent, thereby effectively avoiding interference to other memory cells which will not be programmed during a program operation.

Abstract: A non-volatile storage system reduces program disturb in a set of non-volatile storage elements by programming using selected bit line patterns which increase the clamped boosting potential of an inhibited channel to avoid program disturb. First, second and third sets of non-volatile storage elements are programmed in separate sequences, one after another, so that all program-verify operations occur for the first set, then for the second set, and then for the third set. Each non-volatile storage element in a set is separated from the next closest non-volatile storage element in the set at least two other non-volatile storage elements in the set.

Abstract: An object is to provide a semiconductor device having a memory which can efficiently improve a yield by employing a structure which facilitates the use of a spare memory cell. The semiconductor device includes a memory cell array having a memory cell and a spare memory cell, a decoder connected to the memory cell and the spare memory cell, a data holding circuit connected to the decoder, and a battery which supplies electric power to the data holding circuit. The spare memory cell operates in accordance with an output from the data holding circuit.

Abstract: A semiconductor memory device includes a data coding logic for generating converted data groups and a inverted flag data from original data groups received by the semiconductor memory device. The number of zeros in the converted data groups is less than or equal to the number of zeros in the original data groups. The semiconductor memory device also includes data decoding logic for generating the original data groups from the converted data groups and the inverted flag data. A peripheral circuit may be enabled to program the converted data groups and the inverted flag data into the memory cells and read the converted data groups and the inverted flag data from the memory cells. A control logic may be enabled to generate control signals for the data coding logic, the data decoding logic, and the peripheral circuit.

Abstract: Various embodiments of a semiconductor system, semiconductor memory, and a method of controlling the same are disclosed. In one exemplary embodiment, the semiconductor memory may include a first circuit area configured to perform an operation corresponding to a general operation command and a second circuit area configured to provide the general operation command to the first circuit area. The second circuit area may be configured to determine whether the semiconductor memory selected to perform the operation based on unique identification information and target identification information allocated to the semiconductor memory.

Abstract: Voltage switches, memory devices, memory systems, and methods for switching are disclosed. One such voltage switch uses a pair of switch circuits coupled in series, each switch circuit being driven by a level shift circuit. Each switch circuit uses a group of series coupled transistors with a parallel control transistor where the number of transistors in each group may be determined by an expected switch input voltage and a maximum allowable voltage drop for each transistor. A voltage of a particular state of an enable signal is shifted up to the switch input voltage by the level shift circuits. The particular state of the enable signal turns on the voltage switch such that the switch output voltage is substantially equal to the switch input voltage.

Abstract: A system can include write circuitry configured to implement a write finite state machine selected from a plurality of write finite state machines and read circuitry configured to implement a read finite state machine selected from a plurality of read finite state machines. The system also can include a multi-port memory having a write port controlled by the write circuitry and a read port controlled by the read circuitry. The write circuitry and the read circuitry can be configured to implement the selected write finite state machine and the selected read finite state machine to perform one of a plurality of different data transformations using the multi-port memory.

Abstract: Integrated circuits may include configurable-port memory cells. The configurable-port memory cells may be operable in single-port mode and multiport mode. Each configurable-port memory cell may be coupled to first and second pairs of data lines. The configurable-port memory cell may include a first latching circuit having a first data storage node and a second latching circuit having a second data storage node. The first latching circuit may be coupled to the first pair of data lines through a first set of access transistors, whereas the second latching circuit may be coupled to the second pair of data lines through a second set of access transistors. An additional transistor may be coupled between the first and second data storage nodes. The configurable-port memory cell is configured in the single-port mode if the additional transistor is turned off and is configured in the dual-port mode if the additional transistor is turned on.

Abstract: A semiconductor memory device and a method for accessing the same are disclosed. The semiconductor memory device includes an oxide heterojunction transistor which includes: an oxide substrate; an oxide film on the oxide substrate, wherein an interfacial layer between the oxide substrate and the oxide film behaves like two-dimensional electron gas; a source electrode and a drain electrode being located on the oxide film and electrically connected with the interfacial layer; a front gate on the oxide film; and a back gate on a lower surface of the oxide substrate, wherein the source electrode and the drain electrode of the oxide heterojunction transistor are respectively connected with a first word line and a first bit line for reading operation, and wherein the front gate and the back gate are respectively connected with a second word line and a second bit line for writing operation.

Abstract: A circuit for programming a fuse is disclosed. The circuit includes a voltage supply terminal (Vf) and a semiconductor controlled rectifier (222, 224). The fuse is coupled between the voltage supply terminal and the semiconductor controlled rectifier. A switching circuit (200, 202, 208, 210) is coupled to the semiconductor controlled rectifier.

Abstract: A volatile memory including volatile memory cells adapted to the performing of data write and read operations. The memory cells are arranged in rows and in columns and, further, are distributed in separate groups of memory cells for each row. The memory includes a first memory cell selection circuit configured to perform write operations and a second memory cell selection circuit, different from the first circuit, configured to perform read operations. The first circuit is capable of selecting, for each row, memory cells from one of the group of memory cells for a write operation. The second circuit is capable of selecting, for each row, memory cells from one of the groups of memory cells for a read operation.

Abstract: A nonvolatile memory apparatus includes: a memory cell area including a plurality of memory cells connected to a word line and a bit line; a program time controller configured to determine a program voltage application time for a selected word line, as the selected word line is selected in response to a program command and an address signal; and a controller configured to apply a program voltage to the selected word line according to the program voltage application time determined by the program time controller.

Abstract: Row activation operations within a memory component are carried out with respect to subrows instead of complete storage rows to reduce power consumption. Further, instead of activating subrows in response to row commands, subrow activation operations are deferred until receipt of column commands that specify the column operation to be performed and the subrow to be activated.

Abstract: Disclosed are methods and devices, among which is a device that includes a first semiconductor fin having a first gate, a second semiconductor fin adjacent the first semiconductor fin and having a second gate, and a third gate extending between the first semiconductor fin and the second semiconductor fin. In some embodiments, the third gate may not be electrically connected to the first gate or the second gate.

Abstract: Three-dimensionally spatially localized artificial filament in the active layer of the memristive device formed by means of ion implantation through the top electrode structure provide the means to achieve high repeatability and high reliability of the memristive devices, leading to significantly improved manufacturing yield. The memristive devices fabricated according to the disclosed method of fabrication can be used in data storage, signal processing and sensing applications.

Abstract: A Dynamic Random Access Memory (DRAM) performs read, write, and refresh operations. The DRAM includes a plurality of sub-arrays, each having a plurality of memory cells, each of which is coupled with a complementary bit line pair and a word line. The DRAM further includes a word line enable device for asserting a selected one of the word lines and a column select device for asserting a selected one of the bit line pairs. A timing circuit is provided for controlling the word line enable device, the column select device, and the read, write, and refresh operations in response to a word line timing pulse. The read, write, and refresh operation are performed in the same amount of time.

Abstract: In one example embodiment, the semiconductor device includes a memory cell array having at least one memory cell disposed in a region at which at least one bit line and at least one word line cross. A sensing unit senses data stored in the at least one memory cell. The sensing unit includes a connection control unit configured to control a connection between the at least one bit line and a sensing line based on a control signal, the control signal having a voltage level that varies based on a value of data being sensed by the sensing unit.

Abstract: A high density, low voltage, and low-power one time programmable (OTP) memory is based on core cells with a one transistor design. A CLEAN pulse is directed to a single shunt device at the output of the column decoder so spurious charges that may have been stored in the floating nodes can be cleaned up. Such arrangement also allows for the simultaneous initialization of bit lines, data lines, and sensing lines to zero. Core area layout size is substantially reduced, and operational power requirements are exceeding low making these particularly suitable in HF and UHF RFID applications.

Abstract: Some aspects of the present disclosure relate to write tracking techniques for memory devices. In some embodiments, a memory device includes an array of SRAM cells, wherein each SRAM cell includes a pair of cross-coupled inverters having complimentary storage nodes, and a pair of access transistors that allow selective access to the complimentary storage nodes, respectively. To help ensure that wordline and bitline pulses are of sufficient length and intensity, one or more write tracking cells track a wordline tracking signal, which is representative of a wordline pulse applied to a wordline. In response to the wordline tracking signal, the write tracking cell internally generates a signal that models bitline loading, and provides an output tracking signal based on the wordline tracking and bitline loading signals. Bitline and/or wordline pulses can then be set based on the output tracking signal.

Abstract: Embodiments relate to a two-transistor (2T) floating-body cell (FBC) for embedded-DRAM applications. Further embodiments pertain to a floating-body/gate cell (FBGC), which yields reduction in power dissipation, in addition to better signal margin, longer data retention, and higher memory density.

Abstract: A memory system includes a state set module that provides a first state set having a plurality of states, each being assigned to represent a particular data sequence, and a second state set having a same number of states as the first state set, wherein an assignment of one or more particular data sequences among the states of the second state set is different relative to that set forth in the first state set. The memory system further includes a write module that writes first data to a first multi-level memory cell of the memory system based on the first state set, the first multi-level cell being located on a wordline of the memory system, and that writes second data to a second multi-level memory cell of the memory system based on the second state set, the second multi-level cell being located on the wordline of the memory system.

Abstract: A memory includes an I/O unit that is shared between multiple storage arrays. The shared I/O unit provides output data from the arrays. The memory includes an isolation unit connected between each storage array and the shared I/O unit. In addition, each of the storage arrays and the shared I/O unit may be connected to a separate switched voltage domain through for example, power gating circuits. If one or more of the storage arrays is placed in retention or low-voltage mode, the isolation units that are coupled to the affected storage arrays may be configured to isolate the bitlines of those storage arrays from the shared I/O data paths.

Abstract: Methods for operating a semiconductor memory array including dynamically adjusting control line voltages (e.g., unselected word line or unselected bit line voltages) based on one or more array conditions associated with the semiconductor memory array are described. The one or more array conditions may include a temperature associated with the semiconductor memory array or a particular number of write cycles associated with the semiconductor memory array. In some embodiments, an intermediate voltage is generated based on the one or more array conditions and applied to the unselected word lines and the unselected bit lines of the semiconductor memory array. The one or more intermediate voltages may be generated such that a first voltage difference across unselected memory cells sharing a selected word line is different from a second voltage difference across other unselected memory cells sharing a selected bit line based on the one or more array conditions.

Abstract: Apparatuses and methods are disclosed, including methods for reading data from and programming data to an array of memory cells having varying available storage ranges. One such method involves determining a position of a determined value of a parameter within an available storage range of a selected memory cell of an array of memory cells.

Abstract: In low power CPUs, the best way to reduce power is to reduce supply voltage. Most low voltage memory arrays use an 8T cell, which has read stability immunity, in order to operate at low voltages. An embodiment of the disclosure determines when a write wordline (WWL) rises. If the determination shows that the WWL has risen, at least one of the plurality of p-channel field effect transistors (pFETS) is disconnected from a voltage supply, and the at least one plurality of n-channel field effect transistors (nFET) passe ate transistors are opened.

Abstract: Embodiments for data dependent boosted (DDB) bit cells that may allow for smaller minimum cell supplies (Vmin) without necessarily having to increase device dimensions are presented.

Abstract: Methods and apparatus are provided for use with data storage elements. A ring oscillator is coupled to a selected element within an array such that a feedback loop is defined. A period at oscillation for the ring oscillator is compared to a reference value. A data value stored within the selected element is determined accordingly. Stored data values remain essentially unaltered when accessed and read by way of the ring oscillator. Memory arrays having memristor or other storage elements can be used according to the present teachings.

Abstract: The semiconductor memory device includes a memory cell, a pair of bit lines and a cell power line connected to the memory cell, a first switch connected to the bit lines and a power voltage line, a second switch connected to the cell power line and a write assist cell power line, and a write control circuit configured to control the bit lines, the first switch and the second switch, wherein the write control circuit applies a first voltage of a high level to one bit line and a second voltage of a low level to the other bit line, connects one bit line to the power voltage line and disconnects the other bit line from the power voltage line by the first switch, and then connects the cell power line to the write assist cell power line lower which is than the first voltage by the second switch.

Abstract: A memory device includes a plurality of multi-bit memory cells. A plurality of input data bits are encoded according to an error correction code to generate a codeword including a plurality of groups of bits. Respective ones of the plurality of multi-bit memory cells are programmed to represent respective ones of the groups of bits of the codeword. The groups of bits of the codeword may be groups of consecutive bits. In some embodiments, the multi-bit memory cells are each configured to store in bits and a length of the codeword is an integer multiple of m. Data may be read from the multi-bit memory cells in page units or cell units to recover the codeword, and the recovered code word may be decode according to the error correction code to recover the input data bits.

Abstract: A storage device includes: a printed circuit board; a semiconductor memory package mounted on the printed circuit board via solder joints, the semiconductor memory package incorporating semiconductor memories; a sensor configured to measure a physical quantity relating to a state of the storage device; a database including a damage estimation model base to be used for estimating damage of the solder joints from the physical quantity measured by the sensor; a damage estimating module configured to calculate a damage estimation value of the solder joints from the physical quantity using the damage estimation model base; and a controller configured to control writing, reading, and erasure of electronic data to or from the semiconductor memories based on the damage estimation values calculated by the damage estimating module.

Abstract: In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the semiconductor integrated circuit information indicating whether or not the first operation is being executed and information indicating whether or not the second operation is executable.