Abstract: This document discusses, among other things, a semiconductor die package having a first and a second discrete components embedded into a dielectric substrate. An integrated circuit (IC) die is surface mounted on a first side of the dielectric substrate. The semiconductor die package includes a plurality of conductive regions on the second side of the dielectric substrate for mounting the semiconductor die package. A plurality of through hole vias couple the IC die to the first and second discrete components and the plurality of conductive regions.

Abstract: A fuse layout structure of a semiconductor device includes a plurality of fuses in a fuse open area, wherein three neighboring fuses of the plurality of fuses form a fuse unit, and at least one of the fuses partially overlaps at least one of the other fuses of the same fuse unit in the fuse open area.

Abstract: A semiconductor package includes: a wiring board; and a semiconductor device which is formed on the wiring board; wherein the semiconductor device includes: a semiconductor chip; and a penetration electrode, one end of which is fixed on one plane of the semiconductor chip, and the other end of which penetrates the semiconductor chip and is fixed on the other plane of the semiconductor chip, the penetration electrode penetrating the semiconductor chip in such a manner that the penetration electrode is not contacted to a wall plane of the semiconductor chip by a space portion formed in the semiconductor chip; and the wiring board and the semiconductor device are electrically connected via the penetration electrode.

Abstract: A multi-chip stacked package and its mother chip to save an interposer are revealed. The mother chip is a two-layer structure consisting of a semiconductor layer and an organic layer where a redistribution layer is embedded into the organic layer with a plurality of first terminals and a plurality of second terminals disposed on the redistribution layer and exposed from the organic layer. The mother chip is flip-chip mounted on the substrate. The active surface of the daughter chip is in contact with the organic layer with the bonding pads of the daughter chip bonded to the first terminals. Furthermore, a plurality of electrically connecting components electrically connect the second terminals to the substrate. In the multi-chip stacked package, the interposer can be eliminated with a thinner overall package thickness as well as controlled package warpage.

Abstract: Semiconductor devices are formed with a Cu or Cu alloy interconnect encapsulated by a substantially uniform MnO or Al2O3 layer. Embodiments include forming an opening having side surfaces and a bottom surface in a dielectric layer, forming a barrier layer on the side surfaces and the bottom surface of the opening and on an upper surface of the dielectric layer, treating the barrier layer with an oxygen plasma to form dangling oxygen atoms on the barrier layer, depositing a seed layer on the barrier layer, and filling the opening with Cu or a Cu alloy.

Abstract: Disclosed herein is a semiconductor device that comprises a wiring substrate, at least two semiconductor chips mounted on the wiring substrate, and at least one reinforcing substrate disposed so as to straddle at least portions of the two semiconductor chips.

Abstract: A semiconductor cell includes storage node contact plugs disposed on a semiconductor substrate, a bit line formation area which is disposed between the storage node contact plugs and exposes the semiconductor substrate, and an air gap which is in contact with a lower portion of a sidewall of the bit line formation area and extends in a direction perpendicular to a direction in which the bit line formation area extends. Therefore, the coupling effect between adjacent bit lines as well as the coupling effect caused between adjacent storage node contact plugs and the coupling effect caused between the storage node contact plug and the bit line are controlled to improve characteristics of semiconductor devices.

Abstract: An integrated circuit structure including a copper-aluminum interconnect with a barrier layer including a titanium nitride layer and a method for fabricating the same are disclosed. The method for fabricating an integrated circuit structure including a copper-aluminum interconnect according to the present invention comprises the steps of providing a copper (Cu) layer; forming a barrier layer connected to the copper layer, wherein the barrier layer comprises a first layer including a tantalum layer and a tantalum nitride layer and a second layer including a titanium nitride layer, the first layer contacts the copper layer and is disposed between the copper layer and the second layer, and the barrier layer has a recess correspondingly above the copper layer; and forming an aluminum (Al) layer disposed in the recess.

Abstract: The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g.

Abstract: A power semiconductor module is fabricated by providing a circuit substrate with a metal surface and an insulating substrate comprising an insulation carrier featuring a bottom side provided with a bottom metallization layer. An anchoring structure is provided comprising a plurality of oblong pillars each featuring a first end facing away from the insulation carrier, at least a subset of the pillars being distributed over the anchoring structure in its entirety, it applying for each of the pillars of the subset that from a sidewall thereof no or a maximum of three elongated bonding webs each extend to a sidewall of another pillar where they are bonded thereto. The anchoring structure is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom metallization layer and anchoring structure by means of a solder packing all interstices between the metal surface and bottom metallization layer with the solder.

Abstract: A semiconductor chip can include a semiconductor substrate, an input portion and an output portion. A circuit element can be formed in the semiconductor substrate. The input portion can be formed on the semiconductor substrate. The input portion can include a first input pad to receive an input signal from the outside and a second input pad spaced apart from the first input pad, the second input pad being electrically connected to the first input pad through an external connection line such that the second input pad inputs the input signal to the circuit element. The output portion can be formed on the semiconductor substrate. The output pad can include an output pad to output an output signal from the circuit element.

Abstract: Integrated circuits having doped bands in a substrate and beneath high-voltage semiconductor-on-insulator (SOI) devices are provided. In one embodiment, the invention provides an integrated circuit comprising: a semiconductor-on-insulator (SOI) wafer including: a substrate; a buried oxide (BOX) layer atop the substrate; and a semiconductor layer atop the BOX layer; a plurality of high voltage (HV) devices connected in series within the semiconductor layer; a doped band within the substrate and below a first of the plurality of HV devices; and a contact extending from the semiconductor layer and through the BOX layer to the doped band.

Abstract: A semiconductor memory device includes a first wiring region and a second wiring region located adjacent to the first wiring region. First lines located in the first wiring region include a first portion, a first lead portion and first inclined portion. Second lines located in the second wiring region include a second portion, a second lead portion and a second inclined portion. The first and second portions are located in parallel with a same pitch, the first and second lead portions are located with a pitch which is larger than the pitch of the first and second portions, the first and second inclined portions extend the same direction at a predetermined angle.

Abstract: A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.

Abstract: A programmable passive device comprising a first node and a second node. A plurality of passive device elements electrically coupled to the first node. A plurality of switches are electrically coupled to at least the second node and selectively coupled to a number of the plurality of passive device elements to provide the programmable passive device with a pre-determined value.

Abstract: A semiconductor device may include, but is not limited to: a wiring hoard; and first and second chips stacked over the wiring board. The wiring board includes a plurality of first data terminals and a plurality of second data terminals. One of the first and second chips is sandwiched between the wiring board and the other of the first and second chips. The first chip includes a plurality of first data pads. The second chip includes a plurality of second data pads and a plurality of third data pads. The first data terminals of the wiring board are electrically connected respectively to the first data pads of the first chip and further respectively to the second data pads of the second chip. The second data terminals are electrically connected respectively to the third data pads of the second chip and electrically disconnected from the first chip.

Abstract: A method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. The stack has a primary portion and an end portion. At least some of the features extend farther in the horizontal direction in the end portion moving deeper into the stack in the end portion. Operative structures are formed vertically through the features in the primary portion and dummy structures are formed vertically through the features in the end portion. Horizontally elongated openings are formed through the features to form horizontally elongated and vertically overlapping lines from material of the features. The lines individually extend from the primary portion into the end portion, and individually laterally about sides of vertically extending portions of both the operative structures and the dummy structures.

Abstract: A semiconductor module includes: an insulating resin layer; a wiring layer which is provided on one main surface of the insulating resin layer and which includes an external connection region; bump electrodes which are electrically connected to the wiring layer and each of which is formed such that it protrudes from the wiring layer toward the insulating resin layer; a semiconductor device which is provided on the other main surface of the insulating resin layer and which includes device electrodes connected to the bump electrode; and a wiring protection layer provided on the wiring layer and the insulating resin layer so as to expose the external connection region. In the semiconductor module, the outer edge portion of the wiring protection layer is in contact with the external edge portion of the semiconductor device such that it shields at least a part of the semiconductor resin layer at the side edge.

Abstract: Embodiments of an integrated circuit package security fence are provided. The integrated circuit package includes a substrate, a die, and a security fence coupled to the substrate such that the die is located between the security fence and the substrate. The security fence includes a first signal net having a plurality of bonding wires and a second signal net having a second plurality of bonding wires. The bonding wires of the first signal net and second signal net are arranged in a pattern to overlap the top surface of die. The die may include tamper detection logic to detect attempt to access the die through the security fence.

Abstract: A method and layout for forming word line decoder devices and other devices having word line decoder cells provides for forming metal interconnect layers using non-DPL photolithography operations and provides for stitching distally disposed transistors using a lower or intermediate metal layer or a subjacent conductive material. The transistors may be disposed in or adjacent longitudinally arranged word line decoder or other cells and the conductive coupling using the metal or conductive material lowers gate resistance between transistors and avoids RC signal delays.

Abstract: A ramp-stack chip package is described. This chip package includes a vertical stack of semiconductor dies or chips that are offset from each other in a horizontal direction, thereby defining a terrace with exposed pads. A high-bandwidth ramp component, which is positioned approximately parallel to the terrace, is electrically and mechanically coupled to the exposed pads. For example, the ramp component may be coupled to the semiconductor dies using: solder, microsprings and/or an anisotropic conducting film. Furthermore, each of the semiconductor dies includes a static bend so that an end segment of each of the semiconductor dies is parallel to the direction and is mechanically coupled to the ramp component. These end segments may facilitate high-bandwidth communication of signals between the chips and the ramp component, for example, via proximity communication.

Abstract: A method of manufacturing a semiconductor package, where the package includes a surface for attachment of the package to a device by a joint formed of a connective material in a joint area of the surface. The method is characterized in that it comprises the step of patterning one or more channels on the surface which channels extend away from the joint area towards an edge of the surface. Also the method has the step of applying a compound to one or more channels which compound interacts with the connective material, such that when the semiconductor package is attached to the device the interaction defines one or more paths in the connective material. These correspond to the one or more channels on the surface and allow the passage of waste material away from the joint area to the outer edge of the surface.

Abstract: A method for making a power semiconductor module and a module produced by that method, wherein the module includes a substrate, a connection device and load terminal elements, wherein power semiconductor components are arranged on a conductor track of the substrate and connected to one of the load terminal element by the connection device. The power semiconductor module has auxiliary contact pads which can be connected to an external printed circuit board. The primary production step in this case is cohesively connecting respective first contact areas of the first conductor tracks to at least one second contact area of a power semiconductor component and at least one third contact area of a load terminal element; afterwards, the assemblage composed of at least one power semiconductor component of a connection device and load terminal elements is arranged to form a housing of the power semiconductor module.

Abstract: A semiconductor device includes a first metal pattern formed on a first metal level. The first metal pattern has a ‘U’ shaped first curved portion. A second metal pattern is formed on the first metal level. The second metal pattern has a ‘U’ shaped second curved portion facing the first curved portion. A via structure is electrically connected to one of the first metal pattern and the second metal pattern. A third metal pattern is formed on a second metal level different from the first metal level and electrically connected to the via structure.

Abstract: The invention relates to an electronic component having a GaAs semiconductor substrate (HS), semiconductor components (BE) being implemented on the front side thereof, and the back side thereof having a multilayer backside metallization (RM), wherein an advantageous construction of the layer sequence of the backside metallization is proposed, the backside metallization in particular comprising an Au layer as a bonding layer.

Abstract: An interconnecting structure production method includes providing a substrate, forming a semiconductor layer on the substrate, forming a doped semiconductor layer on the semiconductor layer, the doped semiconductor layer containing a dopant, forming an oxide layer in a surface of the doped semiconductor layer by heating the surface of the doped semiconductor layer in atmosphere of an oxidizing gas with a water molecule contained therein, forming an alloy layer on the oxide layer, and forming an interconnecting layer on the alloy layer.

Abstract: An array of vertically stacked tiers of memory cells includes a plurality of horizontally oriented access lines within individual tiers of memory cells and a plurality of horizontally oriented global sense lines elevationally outward of the tiers. A plurality of select transistors is elevationally inward of the tiers. A plurality of pairs of local first and second vertical lines extends through the tiers. The local first vertical line within individual of the pairs is in conductive connection with one of the global sense lines and in conductive connection with one of the two source/drain regions of one of the select transistors. The local second vertical line within individual of the pairs is in conductive connection with another of the two source/drain regions of the one select transistor. Individual of the memory cells include a crossing one of the local second vertical lines and one of the horizontal access lines and programmable material there-between.

Abstract: According to one embodiment, a semiconductor memory device comprises: a semiconductor substrate; a first contact plug and a second contact plug on the semiconductor substrate; a first bit line being in contact with the first contact plug; and a second bit line on the second contact plug, wherein the first contact plug is in contact with a top surface of the first bit line and is electrically insulated from the second bit line, and a bottom surface of the second bit line is higher in height than the top surface of the first bit line.

Abstract: For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.

Abstract: A semiconductor module comprises components in one wafer level package. The module comprises an integrated circuit (IC) chip embedded within a package molding compound. The package comprises a molding compound package layer coupled to an interface layer for integrating an antenna structure and a bonding interconnect structure to the IC chip. The bonding interconnect structure comprises three dimensional interconnects. The antenna structure and bonding interconnect structure are coupled to the IC chip and integrated within the interface layer in the same wafer fabrication process.

Abstract: Described herein are wafer-level semiconductor device packages with stacking functionality and related stacked package assemblies and methods. In one embodiment, a semiconductor device package includes a set of connecting elements disposed adjacent to a periphery of a set of stacked semiconductor devices. At least one of the connecting elements is wire-bonded to an active surface of an upper one of the stacked semiconductor devices.

Abstract: Substrates having molded dielectric layers and methods of fabricating such substrates are disclosed. The substrates may advantageously be used in microelectronic assemblies having high routing density.

Abstract: Provided are a method of forming a conductive layer on an inner portion of a through-electrode in which uniform adhesion property of plating in the inner portion of a through-hole is enhanced and a tact time is short, and a semiconductor device. The method of forming a conductive layer includes: a first plating step of forming a first plating layer on the inner portion of the through-hole; a plating suppression layer forming step of forming a plating suppression layer including a material different from a material of the first plating layer in an opening portion of the through-hole after the first plating step; and a second plating step of forming a second plating layer by plating on the inner portion of the through-hole after the plating suppression layer forming step.

Abstract: A semiconductor device which is capable of preventing interface peeling and a crack from occurring in the vicinity of the edge part of a rewiring layer is provided. The semiconductor device includes a semiconductor substrate, an electrode pad formed on the semiconductor substrate, a first insulation film formed on the semiconductor substrate having a first aperture which exposes the electrode pad, a first conductor film formed on the electrode pad and the first insulation film, an external electrode electrically connected to the first conductor film, and a sealing resin which covers the first conductor film and the first insulation film. The first conductor film includes a plurality of copper layers which are stacked so that an outer edge portion of the first conductor film has a stepped portion.

Abstract: A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit die having an active side and a passive side; providing a contact pad having a top side oriented in a same direction as the passive side; connecting an inner bond wire to the contact pad and the integrated circuit die; and molding a stacking structure around the contact pad, the inner bond wire, and the integrated circuit die with the passive side and the top side exposed, and the stacking structure having a top structure surface on top and adjacent to or below the integrated circuit die, and a horizontal member under the integrated circuit die and forming a cavity.

Abstract: To suppress the reduction in reliability of a resin-sealed semiconductor device. A first cap (member) and a second cap (member) with a cavity (space formation portion) are superimposed and bonded together to form a sealed space. A semiconductor including a sensor chip (semiconductor chip) and wires inside the space is manufactured in the following way. In a sealing step of sealing a joint part between the caps, a sealing member is formed of resin such that an entirety of an upper surface of the second cap and an entirety of a lower surface of the first cap are respectively exposed. Thus, in the sealing step, the pressure acting in the direction of crushing the second cap can be decreased.

Abstract: A semiconductor contact structure and method provide contact structures that extend through a dielectric material and provide contact to multiple different subjacent materials including a silicide material and a non-silicide material such as doped silicon. The contact structures includes a lower composite layer formed using a multi-step ionized metal plasma (IMP) deposition operation. A lower IMP film is formed at a high AC bias power followed by the formation of an upper IMP film at a lower AC bias power. The composite layer may be formed of titanium. A further layer is formed as a liner over the composite layer and the liner layer may advantageously be formed using CVD and may be TiN. A conductive plug material such as tungsten or copper fills the contact openings.

Abstract: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being disposed on the active surface and a plurality of first bumps each being formed on one of the first pads; a plurality of metal wires connect the first bumps to the contacts; a second chip with a plurality of second pads being disposed on the active surface and a plurality of second bumps each being formed on one of the second pads, the second chip being mounted to the first chip with its active surface facing the active surface of the first chip, wherein the second bumps correspondingly connect the metal wires and the first bumps respectively.

Abstract: Embodiments of the present invention provide electrical bussing for multichip leadframes. In various embodiments, a leadframe may comprise a first die paddle for receiving a first microelectronic device, a second die paddle for receiving a second microelectronic device, and at least one electrical bus disposed between the first die paddle and the second die paddle.

Abstract: Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH3, H2, N2, and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

Abstract: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being disposed on the active surface and a plurality of first bumps each being formed on one of the first pads; a plurality of metal wires connect the first bumps to the contacts; a second chip with a plurality of second pads being disposed on the active surface and a plurality of second bumps each being formed on one of the second pads, the second chip being mounted to the first chip with its active surface facing the active surface of the first chip, wherein the second bumps correspondingly connect the metal wires and the first bumps respectively.

Abstract: Methods, systems, and apparatuses for integrated circuit packages, and for package stacking, are provided. An electrically conductive frame is attached to a first surface of a substrate. The electrically conductive frame includes a perimeter ring portion, a plurality of leads, and a plurality of interconnect members positioned within a periphery formed by the perimeter ring portion. Each interconnect member is coupled to the perimeter ring portion by a respective lead. A first end of each interconnect member is coupled to the first surface of the substrate. An encapsulating material is applied to the first surface of the substrate, without covering a second end of each interconnect member with the encapsulating material. The perimeter ring portion is removed from the electrically conductive frame to isolate the plurality of interconnect members. A first integrated circuit package is formed in this manner. A second integrated circuit package may be mounted to the first package.

Abstract: An IC die includes active circuitry and I/O nodes tied together in first net and at least a second net. A first die pad and a second die pad adjacent thereto are coupled to the first and second net, respectively. A redirect layer (RDL) coupled to the die pads over a first dielectric vias includes a first RDL trace lateral coupling the first die pad and first RDL pad and a second RDL trace coupling the second die pad and second RDL pad. The first RDL pad includes an RDL notch facing the second RDL trace. Under bump metallization (UBM) pads on a second dielectric include a first UBM pad coupled to the first RDL pad over a second dielectric via. A first metal bonding connector is on the first UBM pad. The first UBM pad or first metal bonding connector overhangs the first RDL pad over the notch.

Abstract: A semiconductor device has a carrier for supporting the semiconductor device. A first semiconductor die is mounted over the carrier. A first dummy die having a first through-silicon via (TSV) is mounted over the carrier. The first semiconductor die and the first dummy die are encapsulated using a wafer molding material. The carrier is removed. A first redistribution layer (RDL) is formed over a first surface of the first semiconductor die and a first surface of the first dummy die to electrically connect the first TSV and a contact pad of the first semiconductor die. An insulation layer is formed over the first RDL. A second RDL is formed over a second surface of the first dummy die opposite the first surface of the first dummy die and electrically connected to the first TSV. A semiconductor package is connected to the second RDL.

Abstract: An integrated circuit created from a cell library of compact cells. The cell library includes cells having a metal trace routed along the boundary of the cells for carrying a power supply voltage. The cells also include another metal trace routed along the interior of the cells for carrying another power supply voltage. A cell pin carrying an input signal or output signal of the cell is located outside of the region between the two power rails. By routing the power supply voltages and cell pins of the cell in this manner, the integrated circuit created from the cell is extremely compact while still complying with various design rules.

Abstract: In an embodiment, a first semiconductor wafer having plural first chip areas sectioned by first dicing grooves, and first photosensitive surface protection and adhesive layers provided at each of circuit surfaces of the plural first chip areas is prepared. A second semiconductor wafer having plural second chip areas sectioned by second dicing grooves, and second photosensitive surface protection and adhesive layers provided at each of circuit surfaces of the plural second chip areas is stacked with the first semiconductor wafer via the second photosensitive surface protection and adhesive layers to form plural chip stacked bodies of the first chip areas and the second chip areas.

Abstract: During manufacture of an electronic device, an aerogel coating is applied to a first side of an IC substrate of a first IC. A bonding procedure is initiated, during which IC interconnects are either placed on the coated side of the substrate or on the opposite side of the substrate. The first IC is connected on a carrier to a second IC with the coated side of the first IC facing the second IC to reduce heat transmission to the second IC during operation of the first IC. The aerogel coating reduces thermal stress to the circuit board and surrounding components, reduces the risk of overheating of critical circuit components, provides chemical and mechanical insulation from contamination during subsequent wafer handling operations, and provides a thermal isolator between IC regions of dissimilar power dissipation, which isolator facilitates efficient thermal extraction from localized hotspots.

Abstract: In a lead frame used for manufacturing a semiconductor device by forming a circuit pattern group including unit lead frames having plural upper side terminal parts in the periphery of a semiconductor element mounting region in one line or plural lines and an outer frame surrounding the circuit pattern group in a state of having a gap in a lead frame material and then mounting a semiconductor element every the unit lead frame and carrying out necessary wiring and enclosing the entire surface of the circuit pattern group in which the semiconductor element is mounted and a part of the outer frame with a resin from an upper surface side and further etching from a lower surface side and forming lower side terminal parts joined to the upper side terminal parts of the circuit pattern group, the circuit pattern group and the outer frame are had and the inner edge of the outer frame is formed in an uneven portion in plan view and bonding between the resin and the outer frame is enhanced.

Abstract: Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.