Abstract: Provided is a back side illuminated image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the front side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a deep trench isolation feature that is disposed adjacent to the radiation-detection device. The image sensor device further includes a doped layer that at least partially surrounds the deep trench isolation feature in a conformal manner.

Abstract: A method of supporting a plurality of planar substrates in a tube shaped furnace for conducting a thermal treatment process is disclosed. The method uses a boat fixture having a base frame including two length portions and a first width portion, a second width portion, and one or more middle members connected between the two length portions. Additionally, the method includes mounting a removable first grooved rod respectively on the first width portion, the second width portion, and each of the one or more middle members, each first grooved rod having a first plurality of grooves characterized by a first spatial configuration. The method further includes inserting one or two substrates of a plurality of planar substrates into each groove in the boat fixture separated by a distance.

Abstract: Techniques are disclosed for improving the quantum efficiency of photocathode devices. The techniques allow for an increase in the optical thickness of the photocathode device, while simultaneously allowing for an increase in the probability of electron escape into the vacuum of the device. The techniques are particularly useful in detector and imaging. In one embodiment, a photocathode device is provided that has an array of corner cubes fabricated in a surface of the photocathode. The corner cube array is made of the same material as the photocathode layer. The device may be, for example, a detector or image intensifier that operates in the UV, visible, and IR light spectrums, and may further include a gain medium, anode, and readout device. Techniques for forming the device are also provided.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: Open circuit voltage of a photovoltaic device including a p-i-n junction including amorphous silicon-containing semiconductor materials is increased by a high power plasma treatment on an amorphous p-doped silicon-containing semiconductor layer before depositing an amorphous intrinsic silicon-containing semiconductor layer. The high power plasma treatment deposits a thin layer of nanocrystalline silicon-containing semiconductor material or converts a surface layer of the amorphous p-doped silicon containing layer into a thin nanocrystalline silicon-containing semiconductor layer. After deposition of an intrinsic amorphous silicon layer, the thin nanocrystalline silicon-containing semiconductor layer functions as an interfacial nanocrystalline silicon-containing semiconductor layer located at a p-i junction.

Abstract: An object is to provide a photoelectric conversion device in which defects are suppressed as much as possible by filling a separation process region of a semiconductor film with an insulating resin. A photoelectric conversion device includes a first conductive layer formed over a substrate; first to third semiconductor layers formed over the first conductive layer; a second conductive layer formed over the third semiconductor layer; a first separation groove for separating the first conductive layer and the first to third semiconductor layers into a plurality of pieces; a second separation groove for separating the first to third semiconductor layers into a plurality of pieces; and a third separation groove for separating the second conductive layer into a plurality of pieces. An insulating resin is filled in a structural defect that exists in at least one of the first to third semiconductor layers, and in the first separation groove.

Abstract: A photoelectric conversion module according to an embodiment of the present invention includes a plurality of units formed on a substrate and disposed parallel to each other, each including a plurality of photoelectric conversion cells formed in one direction, the plurality of units disposed in an orthogonal direction to the one direction, and a first separation region disposed between adjacent units of the units. In the solar cell module, each of the photoelectric conversion cells includes a second separation region, and the second separation region in one of the units is extended beyond the first separation region formed between one of the units and the other unit which is adjacent to the one of units toward a part of the other unit.

Abstract: Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form.

Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material comprises one or more portions of copper indium disulfide material and a copper poor surface region characterized by a copper-to-indium atomic ratio of less than about 0.95:1.

Abstract: The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.

Abstract: Solar photovoltaic (PV) devices, e.g., those based on the Copper Indium Selenide (CIS) family of absorbers, including CuIn(1-x)Ga(X)Se2 (CIGS) absorber thin-film PV devices, are provided. Embodiments provide PV devices comprising an alkali metal-containing polymeric film (ACPF), which is a film formed from a composite comprising an alkali metal-containing material and a polymer. Embodiments of this disclosure also provide PV devices comprising a thermally stable polymer film that does not contain an alkali metal (TSP). Included within the embodiments of this disclosure are flexible PV devices comprising a flexible base substrate onto which one or more ACPFs and/or TSPs is/are provided, as well as flexible PV devices wherein an ACPF or TSP itself constitutes the base substrate in the form of a stand alone film Processes for making such flexible PV devices include roll-to-roll processes.

Abstract: A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.

Abstract: According to the method of manufacturing an optical matrix device of this invention, semiconductor films and gate insulating films which influence the characteristics of thin-film transistors most are formed in a vacuum (S12, S13), whereby the interfaces between the semiconductor films and gate insulating films are not contaminated. The semiconductor films and gate insulating films are formed in a vacuum, but wires need not be formed in a vacuum (S03). Thus, the semiconductor films and gate insulating films formed in a vacuum are transferred onto the wires formed beforehand (S21). Even if a substrate has a large area, the wires, semiconductor films and gate insulating films of the thin-film transistors can be formed efficiently.

Abstract: The production method of a photoelectric conversion device comprises the steps of adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.

Abstract: Embodiments of this invention disclose optoelectronic devices and their producing methods. The embodiments employ solution processes to produce p-type transition metal oxide layer, active layer, and n-type transition metal oxide layer of the optoelectronic devices. The p-type transition metal oxide layer comprises a copper oxide (CuO) layer or a nickel oxide (NiO) layer or a mixing layer, which comprises CuO or NiO mixed with an n-type transition metal oxide.

Abstract: A dye-sensitized solar cell (“DSSC”) includes an anode, a cathode, a semiconductor layer, a dye covalently attached to the semiconductor layer, and an electrolyte, wherein the semiconductor layer includes a metal oxide and an organic or inorganic insulating component to facilitate forward transfer of electrons to the anode. The semiconductor additive or insulating component may include, for example, alpha aluminum oxide, gamma aluminum oxide, fumed silica, silica, diatomaceous earth, aluminum titanate, hydroxyapatite, calcium phosphate, iron titanate, and mixtures thereof.

Abstract: Provided are a dye-sensitized solar cell and a method for manufacturing the dye-sensitized solar cell using a carbon nanotube (CNx) doped with nitrogen, wherein the dye-sensitized solar cell using the carbon nanotube (CNx) doped with nitrogen has an improved conductivity and open circuit voltage as compared to those using the carbon nanotube (CNT) and also a high connectivity between a transparent electrode and an oxide semiconductor

Abstract: A solar cell comprises a substrate; an n-type barium silicide layer being arranged on the substrate and containing Ba atoms and Si atoms; an n+-type barium silicide layer being arranged on the n-type barium silicide layer and containing impurity atoms which are at least one of atoms belonging to Groups 13 to 15 of the periodic table, Ba atoms, and Si atoms; an upper electrode arranged on the n+-type barium silicide layer; and a lower electrode arranged on the substrate.

Abstract: A dye-sensitized solar cell module is disclosed. The dye-sensitized solar cell module includes a solution capable of being selectively printed on only a desired region and used in the formation of a metal oxide film. The solution for the metal oxide film formation can be selectively printed on only the surface of metal oxide nano-particle without affecting the electrical conductivity of the electrode and a sealant interposed between transparent electrodes. Therefore, the dye-sensitized solar cell module can greatly improve the output efficiency. Moreover, the dye-sensitized solar cell module can prevent the output efficiency deterioration at an enlarged size.

Abstract: Provided herein are multicomponent semiconductor films having a broad range of bandgaps and charge carrier characteristics. The semiconductor films include copper, zinc, tin, at least one substitutional metal and at least one chalcogen. Substitutional metals include those capable of substituting for a portion of copper, zinc, or both in the semiconductor films. Also disclosed are methods for making the films, including single-bath electrodeposition methods, and devices incorporating the films, including photovoltaic devices.

Abstract: A solar cell manufacturing method is provided. A solar cell manufacturing method according to an exemplary embodiment of the present invention includes: forming a first electrode on a substrate, forming a precursor including copper (Cu), gallium (Ga), and indium (In) on the first electrode, supplying selenium (Se) to the precursor to form a preliminary light absorption layer, depositing at least one of gallium or indium on the preliminary light absorption layer, supplying selenium (Se) to the preliminary light absorption layer deposited with the at least one of gallium and indium to form a light absorption layer and forming a second electrode on the light absorption layer.

Abstract: Provided are methods of forming a nano structure and method of forming a solar cell using the same. The method of forming the nano structure includes: preparing a template; ionizing a surface of the template; forming an oxide layer enclosing the template on the surface of the template; and removing the template.

Abstract: A layer of an n-type chalcogenide compositions provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen.

Abstract: Materials and devices are provided for high-throughput printing of nanostructured semiconductor precursor layer. In one embodiment, a material is provided that comprises of a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and/or VIA. The microflakes may be created by milling precursor particles characterized by a precursor composition that provides sufficient malleability to form a planar shape from a non-planar starting shape when milled, and wherein overall amounts of elements from Groups IB, IIIA and/or VIA contained in the precursor particles combined are at a desired stoichiometric ratio of the elements. It should also be understood that other flakes such as but not limited to nanoflakes may also be used to form the precursor material.

Abstract: A buffer layer manufacturing method, including: a preparation step for preparing a reaction solution which includes a component (Z) of at least one kind of zinc source, a component (S) of at least one kind of sulfur source, a component (C) of at least one kind of citrate compound, a component (N) of at least one kind selected from the group consisting of ammonia and ammonium salt, and water, in which the concentration of the component (C) is 0.001 to 0.25M, the concentration of the component (N) is 0.001 to 0.40M, and the pH of the reaction solution before the start of reaction is 9.0 to 12.0; and a film forming step for forming a Zn compound layer consisting primarily of Zn(S, O) and/or Zn(S, O, OH) by a liquid phase method with a reaction temperature of 70 to 95° C.

Abstract: A dye-sensitized semiconductor includes a semiconductor, and a copper(I) coordination compound comprising 2,9-dialkyl-diphenyl-1,10-phenanthrolinedisulfonate, on the semiconductor. The dye-sensitized semiconductor may be used as part of a photoanode in a solar cell, which also contains a counter-electrode, and a conductive medium containing a redox-active mediator, in contact with and separating the photoanode and the counter-electrode.

Abstract: One embodiment of the present invention provides a double-sided heterojunction solar cell. The solar cell includes a lightly doped epitaxial crystalline Si (c-Si) base layer, a front-side passivation layer situated on the front side of the lightly doped epitaxial c-Si base layer, a back-side passivation layer situated on the back side of the lightly doped epitaxial c-Si base layer, a front-side emitter situated on the surface of the front-side passivation layer, a back surface field (BSF) layer situated on the surface of the back-side passivation layer, a front-side electrode, and a back-side electrode.

Abstract: A radiation detector includes a semiconductor crystal having a first surface and a second surface opposite to the first surface, a first electrode electrically coupled with the first surface of the semiconductor crystal to allow current to flow between the first electrode and the crystal, and an insulating layer on the first surface and between the semiconductor crystal and the first electrode so as to create a partially transmissive electrical barrier between the first electrode and the crystal. The insulating layer has a thickness ranging from about 50 nanometers to about 500 nanometers.

Abstract: A method for producing monocrystalline n-silicon solar cells having a rear-side passivated p+ emitter and rear-side, spatially separate heavily doped n++-base regions near the surface, as well as an interdigitated rear-side contact finger structure, which is in conductive connection with the p+-emitter regions and the n++-base regions. An aluminum thin layer or an aluminum-containing thin layer is first deposited on the rear side of the n-silicon wafer, and the thin layer is subsequently structured so that openings are obtained in the region of the future base contacts. In a further process step, the aluminum is then diffused into the n-silicon wafer in order to form a structured emitter layer.

Abstract: Disclosed are a thin film solar cell module and a manufacturing method thereof. The thin film solar cell comprises, from bottom to top, a first substrate, a first electrode, an absorber layer, and a second electrode layer. A current output region with a current output element disposed therein is formed at the thin film solar cell module. The absorber layer in the current output region is removed through a mask, thereby making the first electrode layer contacts directly there with the second electrode layer. The current output region can be formed at the positive electrode, the negative electrode, or both positive electrode and negative electrode simultaneously, of the thin film solar cell module, thereby increasing the contact area between the first electrode layer and the second electrode layer at the positive electrode and the negative electrode. The useless current, the resistance and the heat generated there are reduced.

Abstract: Provided are a bulk heterojunction solar cell, including: a substrate; a rear electrode formed on a top surface of the substrate; a core layer comprising a copper indium gallium diselenide (CIGS) layer in which a CIGS powder is formed on a top surface of the rear electrode to be porous, an n-type buffer layer coated on the CIGS powder, and an n-type ZnO layer coated on the n-type buffer layer; and a grid electrode formed on a top surface of the core layer, and a method of manufacturing the same. A porous p-type semiconductor layer is formed by sintering CIGS powders, and then, the n-type semiconductor is coated on the surface of the CIGS powders by using a wet method such that a much larger junction area than a physical size of the solar cell is formed and a power output of the solar cell can be greatly increased.

Abstract: The present invention provides radiation detectors with high detection sensitivity. The radiation detectors according to the present invention each include an Al2O3 substrate, a CaxCoO2 (where 0.15<x<0.55) thin film that is layered on the Al2O3 substrate and that has CoO2 planes that are aligned inclined to the surface of the Al2O3 substrate, a first electrode disposed on the CaxCoO2 thin film, and a second electrode disposed on the CaxCoO2 thin film in a position opposed to the first electrode in the direction in which the CoO2 planes are aligned inclined. The surface of the Al2O3 substrate is an n plane or an S plane.

Abstract: A method deposits a layer of an indium chalcogenide onto a substrate. The method includes the steps of: providing an indium source in a reaction zone, providing a gaseous source of a chalcogen in the reaction zone, and heating the substrate. Thereby in the reaction zone, at a pressure of approximately atmospheric ambient pressure, the indium originating from the indium source and the chalcogen originating from the source of a chalcogen are converted to an indium chalcogenide being deposited onto the surface of the substrate.

Abstract: In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.

Abstract: A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer, wherein the light absorbing layer includes a first sub-layer and a second sub-layer, each of which includes a hydrogenated amorphous silicon based material respectively; and wherein the first sub-layer and the second sub-layer include a non-silicon based element, and the second sub-layer includes a crystalline silicon grain surrounded by the hydrogenated amorphous silicon based element.

Abstract: The present invention provides a radiation detector with high detection sensitivity. The radiation detector according to the present invention includes an Al2O3 substrate, a Fe2O3 thin film layered on the Al2O3 substrate, a CaxCoO2 (where 0.15<×<0.55) thin film that is layered on the Fe2O3 thin film and that has CoO2 planes that are aligned inclined to the surface of the Al2O3 substrate, a first electrode disposed on the CaxCoO2 thin film, and a second electrode disposed on the CaxCoO2 thin film in a position opposed to the first electrode in the direction in which the CoO2 planes are aligned inclined.

Abstract: A method for forming a heterojunction III-V photovoltaic (PV) cell includes performing layer transfer of a base layer from a wafer of a III-V substrate, the base layer being less than about 20 microns thick; forming an intrinsic layer on the base layer; forming an amorphous silicon layer on the intrinsic layer; and forming a transparent conducting oxide layer on the amorphous silicon layer. A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer.

Abstract: A light-absorbing layer is composed of a compound-semiconductor film of charcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of charcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, wit

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.

Abstract: A photovoltaic element (110) for converting electromagnetic radiation into electrical energy is provided, which has a tandem cell structure.

Abstract: Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device.

Abstract: A bulk heterojunction comprising an intermixed blend of fully inorganic n- and p-type particles and its method of manufacture are described. The particles are preferably nanometer-scale, spherical-shaped particles known as nanocrystals which are assembled into a densely packed three-dimensional array. The nanocrystals are preferably fabricated from a photo-active material which, in combination with the nanocrystal shape and size, can be engineered to produce a bulk heterojunction with a specific absorption spectrum. The bulk heterojunction is preferably formed by dispersing a predetermined ratio of the desired n- and p-type nanocrystals in an organic solvent and employing low-cost solution processing techniques to deposit a film having the desired thickness, relative concentration of nanocrystal types, and degree of intermixing onto a substrate.

Abstract: There are provided a dye-sensitized solar cell that achieves high photoelectric conversion efficiency, can be manufactured at low cost, and has excellent design properties and a method for manufacturing the dye-sensitized solar cell. Dye-carrying porous titanium oxide layers (2a to 2d) are formed on a transparent conductive substrate (1) such that a desired color is produced and a desired pattern is formed by selecting the type of a sensitizing dye, the thickness, the stacked structure, the particle size of the titanium oxide fine particles or, if the titanium oxide fine particles are composed of at least two types of titanium oxide fine particles having different particle sizes, the combination ratio of the at least two types of titanium oxide fine particles.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: A photovoltaic cell is made by coating a metal foil substrate with cadmium telluride powder, moving the powder coated foil across a cold plate or series of cooled rollers to prevent the substrate from melting, while melting the cadmium telluride powder by passing the powder coated foil under a microwave energy source. This forms a thin film of cadmium telluride on the foil. The cadmium telluride coated foil is then coated with cadmium sulfide powder, which is melted by passing the powder coated foil under a microwave energy source, thereby creating a P-N junction, and the cadmium sulfide layer is coated with indium, which is fused to the cadmium sulfide layer by microwave heating.

Abstract: The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.

Abstract: Solar cell structures and methods of fabricating solar cell structures having increased efficiency are provided.

Abstract: A method for producing a semiconductor material, comprises a step of allowing impurity atoms, Ba atoms and Si atoms to react with each other, the impurity atoms being at least one atom selected from the group consisting of As atom, Sb atom, Bi atom and N atom; and a solar cell comprises the semiconductor material.

Abstract: The semiconductor device according to the present invention includes: a semiconductor substrate; an integrated circuit formed on the semiconductor substrate; and a photoelectric converter, stacked on the integrated circuit, having a light absorbing layer made of a compound semiconductor having a chalcopyrite structure.