Abstract: An output MOS transistor has a drain connected with a power supply and a source connected with an output terminal. The short-circuit MOS transistor has a source connected with the output terminal. The short-circuit MOS transistor is formed in a semiconductor substrate connected with the power supply. A switching device is formed in a semiconductor region which is formed in the semiconductor substrate, and contains a first diffusion layer connected with the gate of the output MOS transistor and a second diffusion layer formed in the semiconductor region and connected with the drain of the short-circuit MOS transistor.

Abstract: A power supply device that switches one of a first power supply, a second power supply, and a third power supply, all of which supply power to an auxiliary device, to a transfer gate in a CMOS image sensor having a photodiode and outputs the corresponding power to the transfer gate is disclosed. The device includes: a first transistor driven by the second power supply and outputting power of the second power supply to the transfer gate; a second transistor driven by the second power supply and outputting power of the first power supply to the transfer gate; a third transistor driven by the third power supply and outputting power of the third power supply to the transfer gate; and a fourth transistor located before the second transistor, driven by the first power supply, and outputting power of the first power supply to a source of the second transistor.

Abstract: Disclosure includes a controller in an integrated circuit and a related switched mode power supply. The switched mode power supply has an input power line and a ground line. An inductive device and a power switch are connected in series between the input power line and the ground line. The controller has a multifunction pin and is configured for controlling the power switch. A resistor connects the multifunction pin to the input power line. During a startup procedure, the controller provides a first conduction path conducting from the multifunction pin to the ground line. During normal operation, the controller disconnects the first conduction path, and makes the multifunction pin an output node of an error amplifier comparing a regulated output with a target value, to generate a PWM signal for controlling the power switch.

Abstract: An integrated circuit comprising: a first core circuit configured to operate at a first clock rate for carrying out a first range of tasks; and a second core circuit configured to operate in a first mode and a second mode, the second core circuit being configured to operate at a second clock rate for carrying out a second range of tasks in the second mode and being configured to operate in the second mode when the first core circuit carries out the first range of tasks, the second clock rate being greater than the first clock rate.

Abstract: An apparatus and method for controlling power supplied to data generating circuits based on performance, such as time delay associated with generating data. The apparatus includes a plurality of data generating circuits configured to generate data at respective outputs in response to a first signal; a plurality of timing circuits configured to generate a plurality of second signals related to time delays between the first signal initiating the generation of the data and an appearance of the data at the respective outputs of the data generating circuits; a power supply circuit configured to generate a voltage for supplying power to the data generating circuits; a power controller configured to control the voltage generated by the power supply circuit based on the plurality of second signals; and a serial data transfer circuit configured to serial transfer the plurality of second signals from the respective timing circuits to the power controller.

Abstract: Internal voltage generation circuits are provided. The internal voltage generation circuit includes a code signal generator and an internal voltage generator. The code signal generator generates input code signals having a logic level combination corresponding to a difference between a frequency of an external clock signal and a frequency of an internal clock signal. The internal voltage generator is selectively activated according to the logic level combination of the input code signals to drive an internal voltage signal.

Abstract: A Silicon On Insulator current source array includes input control for receiving a control voltage, a first reference input for receiving a first reference voltage, and a second reference input for receiving a second reference voltage. A chain of several Silicon On Insulator MOS transistors, of the same type, have control electrodes all connected to the input control, first conduction electrodes are all connected to the first reference input, and second conduction electrodes are respectively connected to the second reference input through several load circuits respectively configured to be traversed by several currents when the several transistors are ON upon application of the control voltage on the input control. An input bias is coupled to a semiconductor well located below an insulating buried layer located below the chain of transistors for receiving a biasing voltage difference.

Abstract: The present invention relates to a switch controller, a switch control method, and a power supply using the switch controller. A switch controller controls switching operation of a power switch and receives a sense voltage of a sense resistor to which a drain current flowing in the power switch flows. The switch controller generates a sum signal using the sense voltage and a ramp signal having a cycle that is the same as a switching cycle of the power switch. The switch controller determines short-circuit of the sense resistor by detecting slope variation of the sum signal.

Abstract: A power supply circuit includes a comparator, first to third electronic switches, a D-trigger, a power supply unit (PSU), and a complex programmable logic device (CPLD). When a voltage from the PSU is greater than a reference voltage, the first electronic switch is turned on. An electronic device connected to the first electronic does not receive power from the PSU. The second electronic switch is turned on. The third electronic switch is turned off. The D-trigger outputs a low level signal to make the CPLD control the PSU stop supplying power.

Abstract: A system includes a control board, a controlled board, and a connector connecting the control board to the controlled board. The control board includes a processing unit that configures the reference voltage signals, a non-volatile memory that stores information about the reference voltage signals, and a DAC that outputs the reference voltage signals in accordance with instructions from the processing unit. The controlled board includes: first and second voltage reference devices that receive first and second reference voltage signals, respectively, and a radio-frequency device that receives a first frequency signal and a second frequency signal and outputs a third frequency signal based on one of the first and second reference voltage signals. The connector includes an analog line for providing reference voltage signals to the first and second voltage reference devices and a digital line for providing control signals to activate one of the first and second voltage reference devices.

Abstract: An integrated circuit (IC) that includes multiple clock domains is provided. Each clock domain operates at a user specified data rate, and the data rates of at least two of the clock domains are related by a common base clock. The specified data rate of each clock domain is controlled by a modulating signal. Each clock domain includes reconfigurable circuits that operate on the common base clock, and the modulating signal controls the data rate of the clock domain by modulating reconfiguration of the reconfigurable circuits. The reconfigurable circuits reconfigure when the modulating signal enables the reconfiguration.

Abstract: A method of fabricating a device includes forming a moveable plate over a substrate. The method further includes forming an energy harvesting coil in the moveable plate. The method further includes forming at least one connector connecting the movable plate with the substrate, wherein a portion of the energy harvesting coil extends along the at least one connector. The method further includes enclosing the movable plate using a capping wafer.

Abstract: A method for integrating a field device of automation technology into a radio network composed of a plurality of field devices, wherein the field device to be integrated switches, or is switched, at start-up, respectively, first start-up, into a special start-up mode, wherein, in the special start-up mode, a peer to peer connection to a service device or to a selected field device is produced on a specific channel and wherein integration data are transmitted from the service device or the selected field device to the field device to be integrated and/or diagnostic data of the field device are transmitted to the service device or to the selected field device.

Abstract: Structures and methods for self-powered devices are disclosed herein. Specifically, disclosed herein is a stacked, three-dimensional integrated circuit including a power generation die including a power source. The integrated circuit also includes a functional system die including one or more functional components that are powered by power generated by the power source. The power generation die and the functional system die are stacked in a three-dimensional structure.

Abstract: An offset-compensation circuit in a MEMS sensor device, provided with a micromechanical detection structure that transduces a quantity to be detected into an electrical detection quantity, and with an electronic reading circuit, coupled to the micromechanical detection structure for processing the electrical detection quantity and supplying an output signal, which is a function of the quantity to be detected. A compensation structure is electrically coupled to the input of the electronic reading circuit and can be controlled for generating an electrical compensation quantity, of a trimmable value, for compensating an offset on the output signal; the compensation circuit has a control unit, which reads the output signal during operation of the MEMS sensor device; obtains information on the offset present on the output signal itself; and controls the compensation structure as a function of the offset information.

Abstract: A bias calibration circuit includes a first current source that can provide a majority biasing current, sufficient to provide most but not all of a desired bias voltage across a sensor. A second current source can provide a remaining amount of biasing current (minority biasing current) to provide a bias voltage across the sensor. In some embodiments, the current sources are programmable and codes are determined for programming the first and second current sources. The codes can be stored in a memory.

Abstract: Systems and methods for providing a full fail-safe capability in signal transmission networks are disclosed. For example, a system for providing a full fail-safe capability in signal transmission networks includes at least a first electronic circuit to transmit and receive signals or data, at least one driver unit coupled to the at least a first electronic circuit, and at least one receiver unit coupled to the at least a first electronic circuit and the at least one driver unit. The at least one receiver unit includes at least one offset signal generating unit, a signal comparing unit, and a switching unit to couple an offset signal from the at least one offset signal generating unit to an input of the signal comparing unit.

Abstract: A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.

Abstract: A power switch 307a is provided between a bias generation circuit 301 and a high potential power source, or a power switch 307b is provided between the bias generation circuit 301 and a low potential power source. A bias potential Vb output from the bias generation circuit 301 is held by a potential holding circuit 300. The bias potential Vb held by the potential holding circuit 300 is input to a bias generation circuit 301a, and a bias potential Vb2 output from the bias generation circuit 301a on which an input signal IN is superimposed is input to an amplifier circuit 302. The potential holding circuit 300 is constituted of a capacitor 306 and a switch 305 formed of, for example, a transistor with a low off-state current that is formed using a wide band gap oxide semiconductor. Structures other than the above structure are claimed.

Abstract: High voltage rated isolation capacitors of inductors are formed on a face of a primary integrated circuit die. The isolation capacitors or inductors AC couple the primary integrated circuit in a first voltage domain to a second integrated circuit in a second voltage domain. The isolation capacitors or inductors DC isolate the primary integrated circuit from the second integrated circuit die. Isolated power transfer from the first voltage domain to the second voltage domain is provided through the high voltage rated isolation capacitors or inductors with an AC oscillator or PWM generator. The AC oscillator voltage amplitude may be increased for an increase in power through the high voltage rated isolation capacitors or inductors.

Abstract: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described.

Abstract: An electronic circuit includes: first circuits each including a first FET having a source supplied with at least one of a first voltage and a second voltage; and a second circuits each of which is associated with a respective one of the first circuits, and generates a back bias voltage applied to the first FET so as to change in accordance with a change of at least one of the first and second voltages.

Abstract: A pre-charging circuit, such as can be used to pre-charge a data bus, is largely process independent. A push-pull type of arrangement is used, where the output of the pre-charge circuit is initially connected to a supply level through one transistor, then connected to ground by another transistor. These transistors can be controlled by one or more comparators that have as inputs a reference level and feedback from the output. The reference level is generated by a circuit that tracks the threshold voltage of the other devices in the circuit in order to reduce process dependency of the output level. The circuit can also include a device to provide an extra VDD assist to the output.

Abstract: A semiconductor device includes first and second resistors. The first resistor is formed in a first substrate region and coupled between a first node and an output node. The second resistor is formed in a second substrate region and coupled between the output node and a second node. The first substrate region is coupled to the first node which has a first voltage. The second node has a second voltage. The second substrate region is coupled to a voltage dividing node that is set in the first resistor.

Abstract: An integrated circuit includes a plurality of power gating elements for controlling power applied to a first module which is in a powered off state, while a second module is in a powered on state, the second module being coupled to receive at least one signal from the first module when the first module is powered on. A a synchronization controller is provided for controlling the power gating elements to ramp up the power gated to the first module in order to power it up and, for a time while the power gated to the first module is below a first level, reducing the power gated to the second module, and for a time when the power gated to the first module is above the first level, increasing the power gated to the second module.

Abstract: An integrated circuit supplied by a rail-to-rail power supply voltage includes a multi-level stack voltage generator configured to partition the rail-to-rail power supply voltage into one or more reduced supply voltages each having a voltage value between positive and negative power supply voltages of the rail-to-rail power supply. The reduced supply voltages and the positive and negative power supply voltages being configured in series to form a stack of circuit layers. The integrated circuit further includes a core circuit including core circuit units coupled in a circuit layer or coupled between two or more circuit layers. Each core circuit unit is coupled to at least one of the reduced supply voltages. The core circuit units are coupled in the stack of circuit layers to form a serial connection of core circuit units between the positive power supply voltage and the negative power supply voltage.

Abstract: An integrated circuit supplied by a rail-to-rail power supply voltage includes a multi-level stack voltage generator configured to partition the rail-to-rail power supply voltage into one or more reduced supply voltages each having a voltage value between positive and negative power supply voltages of the rail-to-rail power supply. The reduced supply voltages and the positive and negative power supply voltages being configured in series to form a stack of circuit layers. The integrated circuit further includes a core circuit including core circuit units coupled in a circuit layer or coupled between two or more circuit layers. Each core circuit unit is coupled to at least one of the reduced supply voltages. The core circuit units are coupled in the stack of circuit layers to form a serial connection of core circuit units between the positive power supply voltage and the negative power supply voltage.

Abstract: A self adjusting reference for an input buffer including an adjustable voltage shifter, a comparator, and a comparator and adjust circuit. The voltage shifter provides adjustable reference voltages based on a primary reference voltage, including upper, midway, and lower reference voltages. The comparator compares the midway reference voltage with the input voltage to provide an input sense signal indicative of a voltage state of the input voltage. The comparator and adjust circuit increases voltage levels of the reference voltages when the input voltage is in a low voltage state and has a voltage level that is greater than the lower reference voltage, and decreases the voltage levels of the reference voltages when the input voltage is in a high voltage state and has a voltage level that is less than the upper reference voltage.

Abstract: An apparatus and a method for processing a signal, and for estimating a point corresponding to a maximum slope from an envelope of an input signal, are provided. A signal processing apparatus includes an envelope detecting unit configured to detect an envelope of an input signal. The signal processing apparatus further includes a correcting unit configured to correct slopes, each of the slopes being between respective points of the envelope, based on information on a clipping interval of the envelope. The signal processing apparatus further includes an estimating unit configured to estimate a point, of the envelope, in which a corrected slope, among the corrected slopes, includes a maximum value.

Abstract: Embodiments disclosed herein may relate to supply voltage or ground connections for integrated circuit devices. As one example, two or more supply voltage bond pads on an integrated circuit die may be connected together via one or more electrically conductive interconnects.

Abstract: A gamma reference voltage generation circuit and a flat panel display using the same are provided. The gamma reference voltage generation circuit includes R, G and B gamma reference voltage generators each having a plurality of digital-to-analog converters (DACs) that generate a plurality of R, G and B gamma reference voltages. In the DACs of each of the R, G and B gamma reference voltage generators, a high potential bias voltage input terminal of an uppermost DAC used to generate a gamma reference voltage of a maximum gray level is connected to a high potential voltage source. A high potential bias voltage input terminal of each of remaining DACs except the uppermost DAC is cascade-connected to an output terminal of an upper DAC next to each of the remaining DACs.

Abstract: A stack package may include a plurality of chips stacked with a plurality of layers; and a chip selection controller configured to provide a reference and chip selection control signal to the plurality of chips. Each chip may comprise: a reference signal controller configured to transmit the reference signal through a first line interconnecting the plurality of chips; a chip selection delay unit configured to control a delay timing point of the chip selection control signal to transmit the control result to each node of a second line interconnecting the plurality of chips; a delay-time-difference sensing unit configured to calculate a delay time difference between a signal applied to each node of the first and second line to generate chip selection information corresponding to the calculated delay time difference; and a memory unit configured to store the chip selection information.

Abstract: A method and system to control crosstalk among qubits on a chip are described. The method includes placing two or more components symmetrically on the chip, the chip including the qubits, and driving two or more ports symmetrically to control the crosstalk based on controlling coupling of chip mode frequencies and qubit frequencies.

Abstract: A circuit comprises a first transistor of a first type, a second transistor of a second type, and a third transistor of the first type or the second type. The first transistor and the second transistor form an inverter. The third transistor is coupled with an output of the inverter. The circuit includes at least one of the following voltage sources: a first voltage source, a second voltage source, and a third voltage source. The first voltage source is coupled with a bulk of the first transistor, and is different from a first supply voltage source of the first transistor. T second voltage source is coupled with a bulk of the second transistor, and is different from a second supply voltage of the second transistor. The third voltage source is coupled with a bulk of the third transistor.

Abstract: An internal voltage compensation circuit is provided which includes a power up signal generator configured to generate a power up signal, a select signal generator configured to compare a level of a first external voltage with a level of a second external voltage to generate first and second select signals, wherein the second select signal is generated in response to the power up signal, and a voltage compensation unit configured to electrically connect an internal voltage to the first external voltage or the second external voltage in response to the first and second select signals.

Abstract: A signal processing apparatus that includes a circuit in which a signal processing function is performed during a first time period, the signal processing apparatus including or being associated with a switch or a filter in a power supply to the signal processing apparatus so as to disconnect the signal processing apparatus from the power supply or to filter the power supply during a second time period that is coincident with at least part of the first time period.

Abstract: High voltage rated isolation capacitors are formed on a face of a primary integrated circuit die. The isolation capacitors AC couple the primary integrated circuit in a first voltage domain to a second integrated circuit in a second voltage domain. The isolation capacitors DC isolate the primary integrated circuit from the second integrated circuit die. Isolated power transfer from the first voltage domain to the second voltage domain is provided through the high voltage rated isolation capacitors with an AC oscillator or PWM generator. The AC oscillator voltage amplitude may be increased for an increase in power through the high voltage rated isolation capacitors, and a larger value capacitor in the second voltage domain may provide for peak current demand from circuits in the second voltage domain.

Abstract: An internal voltage generating circuit capable of controlling a swing width of a detection signal in a semiconductor memory apparatus is provided. The internal voltage generating circuit of a semiconductor memory apparatus includes an internal voltage level detecting unit configured to compare an internal voltage with a target voltage and then generate a detection signal, and an internal voltage level control unit configured to control the internal voltage based on a voltage level of the detection signal, wherein the internal voltage level detecting unit is configured to control a swing width of the detection signal based on a voltage difference between the internal voltage and the target voltage.

Abstract: Systems, methods, and computer readable media that can mitigate the effects of semiconductor aging in a semiconductor device are described. Traditional methods of mitigating semiconductor aging can be wasteful since they overcorrect for aging using a high operational voltage. The approach discussed herein steps up the operational voltage for the electronic device with time based on predetermined aging models. This allows power consumption by the electronic device, particularly early in the designed operational life, to be much less than it would otherwise be.

Abstract: A stack package having a plurality of stacked chips includes first voltage dropping units respectively formed in the plurality of chips, the first voltage dropping units are electrically coupled by a first line; second voltage dropping units respectively formed in the plurality of chips, the second dropping units are electrically coupled by a second line; first signal generation units respectively formed in the plurality of chips, each of the first signal generation units is connected to an output node of the first voltage dropping units, respectively; and second signal generation units respectively formed in the plurality of chips, each of the second signal generation units is connected to an input node of the second voltage dropping units, respectively.

Abstract: In one embodiment, an apparatus includes a power switch to provide a local power voltage at least one gated circuit based on a control signal. The apparatus also includes a delay sensor to provide a delay substantially equivalent to a processing delay of the at least one gated circuit. The apparatus also includes a phase detector to provide the control signal based at least in part on the delay.

Abstract: A device includes a semiconductor chip and a bypass layer electrically coupled to a contact region of the semiconductor chip. The bypass layer is configured to change from behaving as an insulator to behaving as a conductor in response to a condition of the semiconductor chip.

Abstract: A reference quantity generator for generating a reference quantity includes a reference source configured to provide a reference source signal, a digitally controlled signal source and a digital controller. The digitally controlled signal source is configured to provide a digitally controlled quantity. The reference quantity is determined based on the digitally controlled quantity. The digital controller is configured to provide a digital control signal to control the digitally controlled signal source to adapt the digitally controlled quantity based on the reference source signal using a feedback.

Abstract: The present invention discloses a fast switching current mirror circuit and method for generating fast switching current. The circuit and method for fast switching of a current mirror with large MOSFET size will save space and current consumption.

Abstract: A semiconductor device having an on-chip voltage regulator to control on-chip voltage regulation and methods for on-chip voltage regulation are disclosed. A semiconductor device includes a circuit positioned between a ground bus and a power bus. A power switch array is positioned between the circuit and one of the ground bus or the power bus to generate a virtual voltage across the circuit. A monitor is positioned between the ground bus and the power bus. The monitor is configured to simulate a critical path of the circuit and to output a voltage adjust signal based on an output of the simulated critical path. A controller is configured to receive the voltage adjust signal and to output a control signal to the power switch array to control the virtual voltage.

Abstract: TASK: to provide an internal voltage trimming circuit having a simple configuration and operated by a consumption current smaller than that using a comparator. MEANS FOR SOLVING THE PROBLEM: An internal voltage trimming circuit comprises a trimming controller using a change in a counting value of a clock according to a current flowing through a transistor of a power supply current source for a clock generator to trim an internal voltage generated by an internal voltage generator. The trimming controller counts a first counting value of the clock when a predetermined reference voltage is applied to a control terminal of the transistor and a second counting value of the clock when the internal voltage is applied to the control terminal of the transistor and controls the internal voltage generated by the internal voltage generator to substantially coincide the second counting value with the first counting value.

Abstract: A reversible, switched capacitor voltage conversion apparatus includes a plurality of individual unit cells coupled to one another in stages, with each unit cell comprising multiple sets of inverter devices arranged in a stacked configuration, such that each set of inverter devices operates in separate voltage domains wherein outputs of inverter devices in adjacent voltage domains are capacitively coupled to one another such that a first terminal of a capacitor is coupled to an output of a first inverter device in a first voltage domain, and a second terminal of the capacitor is coupled to an output of a second inverter in a second voltage domain; and wherein, for both the first and second voltage domains, outputs of at least one of the plurality of individual unit cells serve as corresponding inputs for at least another one of the plurality of individual unit cells.

Abstract: Systems and methods for distributing power to a plurality of integrated circuit dies are provided. In some aspects, a system includes a substrate and a plurality of integrated circuit dies disposed on the substrate. Each of the plurality of integrated circuit dies includes a circuit and a target inductive element coupled to the circuit. The system also includes a power supply module configured to generate a source power signal. The system also includes at least one source inductive element configured to electromagnetically couple the source power signal to one or more of the plurality of the target inductive elements to generate one or more target power signals that supply power to one or more corresponding circuits.

Abstract: Disclosed herein are nanoscale devices comprising one or more ferroelectric nanoshells characterized as having an extreme curvature in at least one spatial dimension. Also disclosed are ferroelectric field effect transistors and metal ferroelectric metal capacitors comprising one or more ferroelectric nanoshells. Methods for controlling spontaneous ferroelectric polarization in nanoshell devices are also disclosed.

Abstract: Integrated circuit and method for generating a clock signal, the integrated circuit comprising (i) a frequency locked loop comprising a voltage controlled oscillator configured to receive a control input and to generate a clock signal determined by the control input; and (ii) a microprocessor configured to be powered by a supply voltage and to receive the clock signal generated by the voltage controlled oscillator. The integrated circuit is configured to use the supply voltage as the control input, such that the clock signal is determined by the supply voltage.