Abstract: Systems and methods for distributing power to a plurality of integrated circuit dies are provided. In some aspects, a system includes a substrate and a plurality of integrated circuit dies disposed on the substrate. Each of the plurality of integrated circuit dies includes a circuit and a target inductive element coupled to the circuit. The system also includes a power supply module configured to generate a source power signal. The system also includes at least one source inductive element configured to electromagnetically couple the source power signal to one or more of the plurality of the target inductive elements to generate one or more target power signals that supply power to one or more corresponding circuits.

Abstract: Disclosed herein are nanoscale devices comprising one or more ferroelectric nanoshells characterized as having an extreme curvature in at least one spatial dimension. Also disclosed are ferroelectric field effect transistors and metal ferroelectric metal capacitors comprising one or more ferroelectric nanoshells. Methods for controlling spontaneous ferroelectric polarization in nanoshell devices are also disclosed.

Abstract: Integrated circuit and method for generating a clock signal, the integrated circuit comprising (i) a frequency locked loop comprising a voltage controlled oscillator configured to receive a control input and to generate a clock signal determined by the control input; and (ii) a microprocessor configured to be powered by a supply voltage and to receive the clock signal generated by the voltage controlled oscillator. The integrated circuit is configured to use the supply voltage as the control input, such that the clock signal is determined by the supply voltage.

Abstract: Apparatus and methods disclosed herein implement a MOS resistor using the current channel of a MOS transistor. The MOS resistance R(DS) is dependent upon MOS transistor geometry and nominal gate voltage. MOS resistor terminal-to-gate voltages are averaged and applied to the MOS transistor gate such as to maintain the MOS resistor terminal voltage to current ratio, resulting in a substantially constant R(DS). R(DS) is also compensated for temperature and process variations by adjusting gate voltages via negative feedback methods.

Abstract: An electronic circuit includes a plurality of circuit blocks, a plurality of bias circuits, a switching circuit, and plurality of transistors. The plurality of circuit blocks each includes a high power terminal and a low power terminal. The switching circuit includes a plurality of switches for selectively coupling a bias circuit of the plurality of bias circuits to the low power terminal of a circuit block of the plurality of circuit blocks. Each bias circuit of the plurality of bias circuits is selectively couplable to the low power terminal of each of the plurality of circuit blocks. Each transistor of the plurality of transistors has a first current terminal coupled to a circuit ground terminal, and each transistor of the plurality of transistors has a control terminal for controlling the conductivity of the plurality of the transistors by a bias circuit of the plurality of bias circuits.

Abstract: Drive and startup circuits are described particularly suitable for use with a switched capacitor divider. In one example, a drive circuit has a level shifter coupled to a gate of each switch of a switched capacitor drive circuit to couple alternating current into the respective gate, a positive phase low side driver coupled to each level shifter to drive the gates of the top switch path through the respective level shifters, and a negative phase low side driver coupled to each level shifter to drive gates of the bottom switch path through the respective level shifters. A startup circuit, such as a capacitive soft start circuit may be used to slow the application of the current to each switch.

Abstract: A sense-amplifier monotizer includes an amplifier circuit and a keeper circuit. The amplifier circuit outputs a predetermined logic state while a clock signal is in a first phase, and samples a data signal and outputs at least one of the data signal and a complementary logic state of the data signal while the clock signal is in a second phase. A subsequent change of the data signal does not affect an output of the amplifier circuit once the data signal is sampled while the clock signal is in the second phase. The keeper circuit keeps a logic state of the sampled data signal once the data signal is sampled while the clock signal is in the second phase. The amplifier circuit may receive multiple data signals, and output a data signal selected by the select signal and/or a complementary value while the clock signal is in the second phase.

Abstract: A voltage translation circuit (116) provides an output analog voltage signal that has a translated voltage of the voltage of an input analog voltage signal over a range of values of the input analog voltage signal. The voltage translation circuit includes an input stage (202) having a circuit node and an input transistor (210) coupled between the circuit node and a power supply terminal, wherein a gate of the input transistor is coupled to receive the input analog voltage signal; a current path circuit (204) in parallel with the input transistor, wherein the current path includes a first transistor coupled between the circuit node and the power supply terminal; and a circuit coupled to provide a variable body bias voltage to a body of the first transistor.

Abstract: Supply voltage sequencing circuitry includes a first sequencer (10-1) that produces an active level of a Power Good signal PG if a first supply voltage VOUT1 exceeds an upper threshold V90% while a control signal EN_PG is active, and produces an inactive level of PG if EN_PG is inactive. The PG level is latched when a control signal EN is inactive. A Power Down signal PD is produced if VOUT1 is less than a lower threshold V10% while EN is inactive. An active level of PD is produced when EN is active. A power-up sequence of supply voltages VOUT1, VOUT2, and VOUT3 monitored by the first sequencer and similar second (10-2) and third (10-3) sequencers, respectively, is determined by connection of PG of each of the first and second sequencers to control the supply voltage monitored by the next sequencer.

Abstract: A circuit for detecting a voltage change is described. The circuit includes a supply insensitive pulse generator that generates a pulse signal. The circuit also includes a time-to-digital converter coupled to the supply insensitive pulse generator. The time-to-digital converter generates a digital signal based on the pulse signal and a voltage. The circuit also includes a controller coupled to the time-to-digital converter that detects a voltage change based on the digital signal.

Abstract: An integrated circuit and method are provided for controlling variation in the voltage output from on-chip voltage generation circuitry. The integrated circuit comprises voltage generation circuitry configured to operate from a supplied input voltage and to generate at an output node an on-chip voltage supply different to the supplied input voltage. A circuit block is then arranged to receive the on-chip voltage supply generated by the voltage generation circuitry, during operation of the circuit block the circuit block presenting a varying load on the output node. Oscillation circuitry is also coupled to the output node to provide an additional load on the output node, and is configured to produce an oscillation signal whose frequency varies as the value of the on-chip voltage supply varies. Control circuitry is configured to be responsive to a trigger condition to adjust the additional load provided on the output node by the oscillation circuitry.

Abstract: An integrated circuit includes an internal power line, a no-connection (NC) pad, and a switch configured to electrically connect the internal power line with the NC pad to supply a first external voltage to the internal power line through the NC pad in response to a control signal.

Abstract: A current mirror comprises first and second sets of transistors. each of the first and second sets is a matched set comprising a first transistor and a second transistor. For each set, the base of the first transistor is directly coupled to the base of the second transistor. For one of the first and second transistors of each set the base is directly coupled to the collector. The collectors of the first and second transistors of the first set are coupled, respectively, to the emitters of the first and second transistors of the second set in series. A current output of the current mirror is coupled between the collector of the second transistor of the first set and the emitter of the second transistor of the second set.

Abstract: An approach for providing a latch-up robust PNP-triggered SCR-based device is disclosed. Embodiments include providing a silicon control rectifier (SCR) region; providing a PNP region having a first n-well region proximate the SCR region, a first N+ region and a first P+ region in the first n-well region, and a second P+ region between the SCR region and the first n-well region; coupling the first N+ region and the first P+ region to a power rail; and coupling the second P+ region to a ground rail.

Abstract: Apparatus and methods disclosed herein implement a MOS resistor using the current channel of a MOS transistor. The MOS resistance R(DS) is dependent upon MOS transistor geometry and nominal gate voltage. MOS resistor terminal-to-gate voltages are averaged and applied to the MOS transistor gate such as to maintain the MOS resistor terminal voltage to current ratio, resulting in a substantially constant R(DS). R(DS) is also compensated for temperature and process variations by adjusting gate voltages via negative feedback methods.

Abstract: A voltage driving circuit comprises a current bias generating unit and a voltage driving unit. The current bias generating unit is configured to receive a mode signal and to generate a mode selection current in response to the mode signal. The voltage driving unit is coupled to the current bias generating unit, and is configured to receive the mode selection current and to drive an output voltage at a slew rate that is set according to the mode selection current. The voltage driving unit can include a plurality of stages, where each stage is configured to drive the output voltage at a respective different slew rate according to the mode signal.

Abstract: An integrated circuit (100) in which a voltage divider circuit is integrated comprises a first resistor (121), second resistor (122), control portion (130), switch (140), and switching portion (150). The first resistor (121) and second resistor (122) form a resistive voltage divider element for dividing a voltage obtained by rectifying an alternating-current voltage, or a direct-current voltage, supplied to a control portion (130). The switch (140) is provided in series with the resistive voltage divider element, and passes or cuts off current passing through the resistive voltage divider element. The switching portion (150) switches the switch (140) so as to pass current during driving of the control portion (130), and cut off current during standby of the control portion (130).

Abstract: Power gating control and related circuitry for integrated circuits is described herein. A centralized power gating control circuit uses trigger circuits to control the on/off switching of power gating circuits distributed at different points in a chip, integrated circuit, module or block (collectively “IC”). The power gating circuits may include power gates partitioned for sleep and shutdown modes. The shutdown mode power gates may employ multi-level power gate architecture to minimize inrush current during power-up of the IC. Each level may be associated with or tied to a trigger circuit and activated based on a voltage level reaching the voltage threshold of the trigger circuit. The power gating control and related circuitry may be embedded in the IC.

Abstract: Embodiments disclosed herein may relate to supply voltage or ground connections for integrated circuit devices. As one example, two or more supply voltage bond pads on an integrated circuit die may be connected together via one or more electrically conductive interconnects.

Abstract: A die including a first set of power tiles arranged in a first array and having a first voltage; a second set of power tiles arranged in a second array offset from the first array and having a second voltage; a set of power mesh segments enclosed by the second set of power tiles and having the first voltage; a first power rail passing underneath the set of power mesh segments and the first set of power tiles; and a set of vias operatively connecting the power rail with the set of power mesh segments and the first plurality of power tiles.

Abstract: Methods and apparatus for matching voltages between two or more circuits within an integrated circuit is disclosed. The apparatus includes a comparator circuit, comparing supply voltages to first and second circuits. The comparator outputs a variable error voltage based on the comparison, the error voltage related to the difference in voltages. The error voltage is supplied to a variable current control circuit that variably sinks one of the supply voltages to a common potential in order to increase the IR drop in the circuit supplying voltage to one of the first and second circuits, thereby affording voltage adjustment in order to match the first and second circuits. A corresponding method is also disclosed.

Abstract: Systems, apparatus, and methods are provided for initializing a voltage bus. An exemplary system includes an input interface, a voltage bus, discharge circuitry coupled to the voltage bus, connection circuitry coupled between the voltage bus and the input interface, and a control module coupled to the connection circuitry and the discharge circuitry. The control module activates the discharge circuitry prior to activating the connection circuitry.

Abstract: Negative voltage generators that do not require level shifters or AC coupling capacitors are disclosed. In an exemplary design, a negative voltage generator includes first, second, third and fourth switches, a capacitor, and a control circuit. The first switch is coupled between an input node and a first node. The second switch is coupled between the first node and circuit ground. The third switch is coupled between a second node and circuit ground. The fourth switch is coupled between the second node and an output node. The input node receives a positive voltage, and the output node provides a negative voltage. The capacitor is coupled between the first and second nodes. The control circuit (e.g., an inverter) generates a control signal having positive and negative voltage levels for the third switch using a negative voltage level at the second node.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a semiconductor integrated circuit a voltage regulator providing a prescribed power-supply voltage, a plurality of delay test circuits, each of the delay test circuits being configured in each of areas where electrical current flows in response to each of operation modes, a test control unit executing a delay test using the delay test circuit under a test mode while decreasing a power-supply voltage in a stepwise fashion, a supply voltage decision unit deciding the power-supply voltage of the operation mode on a basis of the delay test, a memory unit storing the power-supply voltage of each operation mode, a supply voltage configuration unit reading out the power-supply voltage corresponding to the operation mode from the memory unit, and the supply configuration unit arranging the power-supply voltage as an output voltage of the voltage regulator when each of the operation modes starts to execute.

Abstract: Devices and circuits for row driver in a memory device. The proposed row driver circuit architectures may reduce size of the row driver circuitry and enhance the row driver circuit's reliability. Specifically, the proposed embodiments of the row driver may reduce the required sizing of the boosting capacitor or alternatively eliminate the boosting capacitor entirely. Further, the embodiments of the row driver may reduce the risk of charge-leakage on K-nodes, enhancing the row driver's reliability in driving the x-path of the memory array.

Abstract: Described herein is an apparatus for dynamically adjusting a voltage reference level for optimizing an I/O system to achieve a certain performance metric. The apparatus comprises: a voltage reference generator to generate a voltage reference; and a dynamic voltage reference control unit, coupled with the voltage reference generator, to dynamically adjust a level of the voltage reference in response to an event. The apparatus is used to perform the method comprising: generating a voltage reference for an input/output (I/O) system; determining a worst case voltage level of the voltage reference; dynamically adjusting, via a dynamic voltage reference control unit, the voltage reference level based on determining the worst case voltage level; and computing a center of an asymmetrical eye based on the dynamically adjusted voltage reference level.

Abstract: A coupling failure of a supply terminal or a ground terminal is easily detected. A diode is disposed between a supply terminal of a semiconductor device and a first I/O terminal so that the supply terminal is located on a cathode side, and the first I/O terminal is located on an anode side. A determination unit determines whether or not a voltage of the supply terminal is lower than a voltage of the first I/O terminal when a signal of high level equal to a supply voltage is input to the first I/O terminal.

Abstract: In accordance with an embodiment, an offset-compensated active load includes a pair of transistors having control electrodes connected to their drain electrodes through coupling devices. The control electrodes of the transistors are connected to each other through a plurality of charge storage elements. In accordance with another embodiment, an offset current is generated in response to coupling input terminals of an input stage together. The offset current flows towards an active load which generates an offset voltage in response to the offset current. The offset voltage is stored in the plurality of charge storage devices of the offset-compensated active load.

Abstract: Embodiments of an AC coupled bus charging system are disclosed that may allow for different charging currents. The charging system may include a charging circuit and a control circuit. The charging circuit may be operable to controllably select different charging currents dependent upon the output of the control circuit.

Abstract: A semiconductor structure and method for manufacturing the same are provided. The semiconductor structure includes a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type formed in the deep well and extending down from the surface of the substrate; and a second well having the second conductive type formed in the deep well and extending down from the surface of the substrate, and the second well adjacent to the first well. The first well includes a block region and plural finger regions joined to one side of the block region, while the second well includes plural channel regions interlaced with the finger regions to separate the finger regions.

Abstract: A semiconductor integrated circuit device includes a functional circuit part that includes a plurality of field effect transistors, a mode control circuit that receives a first control signal and that generates a second control signal that is used to change a logic state of the functional circuit part, an output control circuit that receives an output signal of the functional circuit part and controls output of the output signal, and a control circuit that receives the second control signal and that generates a third control signal to the output control circuit. During a time period when the functional circuit part changes a logic state according to the second control signal, the output control circuit inverts the output signal of the functional circuit part according to the third control signal.

Abstract: A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

Abstract: Disclosed herein is a device that includes a first transistor coupled between an input terminal and an output terminal and including a control gate, a voltage-generating circuit configured to produce a voltage at the control gate of the first transistor, and a discharge circuit coupled between the input terminal of the first transistor and the control gate of the first transistor, the discharge circuit responding to a discharge signal to perform a discharge operation such that an electrical charge is discharged from the output terminal to the input terminal of the first transistor.

Abstract: A method of protecting a power supply voltage in an integrated circuit is disclosed. The method includes storing charge in a charge reservoir capacitor (142), receiving a power supply sample voltage (140), and receiving a load power supply voltage (VDDL, 102). The power supply sample voltage is compared to the load power supply voltage (150). Charge is added from the charge reservoir capacitor (142) to the load power supply (VDDL) through transistor 126 and capacitor 144 in response to the step of comparing.

Abstract: A semiconductor integrated circuit device includes a functional circuit part that includes a plurality of field effect transistors, a mode control circuit that receives a first control signal and that generates a second control signal that is used to change a logic state of the functional circuit part, an output control circuit that receives an output signal of the functional circuit part and controls output of the output signal, and a control circuit that receives the second control signal and that generates a third control signal to the output control circuit. During a time period when the functional circuit part changes a logic state according to the second control signal, the output control circuit inverts the output signal of the functional circuit part according to the third control signal.

Abstract: A precision charge dump circuit configured to transfer preset quanta of charge to or from a first capacitor (for example, an integration capacitor in an in-pixel ADC circuit). In one example, the charge dump circuit uses a second capacitor that is pre-charged with the preset quanta of charge to determine the preset value of the quanta of charge, and an amplifier in a voltage-follower mode to cause the charge subtraction or addition.

Abstract: A semiconductor integrated circuit includes: a first transistor and a second transistor connected in series between a first voltage and a second voltage; a first inverter configured to control the first transistor; a second inverter configured to control the second transistor; and a current source, wherein the current source is connected in series with at least one of the first inverter or the second inverter.

Abstract: A method and circuit for providing a switched current source output has a precharge mode, in which a charge storage device is charged to a reference voltage, and the gate of an output transistor is discharged. In a discharge mode, the charge storage device is discharged to the gate of the output transistor to raise the gate voltage by an amount depending on the charge flow.

Abstract: A system and method for powering a wireless sensor device are disclosed. In a first aspect, the wireless sensor device comprises at least two electrodes configured to be attached to a body and at least two leads coupled to the at least two electrodes. The wireless sensor device also includes a system on chip (SoC) coupled to the at least two leads and a portable power source (Vbatt) coupled to the SoC. When the at least two electrodes are attached to the body, a difference in resistance is measured between the at least two leads by the SoC and the difference in resistance is utilized by the SoC to enable the portable power source to activate the wireless sensor device.

Abstract: Examples of analog delay lines and analog delay systems, such as DLLs incorporating analog delay lines are described, as are circuits and methods for adaptive biasing. Embodiments of adaptive biasing are described and may generate a bias signal for an analog delay line during start-up. The bias signal may be based in part on the frequency of operation of the analog delay line.

Abstract: The invention discloses a capacitive touch panel detection circuit and a boost circuit thereof, wherein the boost circuit comprises a plurality of charge pumps in series, a sequence circuit and a voltage-stabilizing circuit. The charge pump comprises a first switch, a second switch, a third switch, a fourth switch, a first capacitor and a second capacitor. The switches are controlled by the sequence circuit. During the first half of the working cycle of the charge pump, the first capacitor is charged. During the second half of the working cycle of the charge pump, the second capacitor is charged so that the voltage is two times of the power voltage, after the first capacitor is connected with the power supply in sequence. The boost circuit of the invention does not need an induction and a Schottky diode. All of the capacitors except a voltage-stabilizing capacitor can be integrated into a chip. Therefore, the number of off-chip ancillary components can be reduced.

Abstract: An apparatus comprising a first circuit, a second circuit, and a third circuit. The first circuit may be configured to generate a first control voltage and a second control voltage. The second circuit may be configured to generate a bias signal in response to the first control voltage and the second control voltage. The third circuit may be configured to generate a filtered signal in response to the bias signal. The filtered signal may be added to the first control voltage and the second control voltage to provide AC noise suppression when generating the bias signal.

Abstract: An auxiliary voltage generating unit for a radio frequency switch includes a first input and a second input respectively configured to receive a first control signal and a second control signal, wherein the first control signal and the second control signal are configured to control which one of a plurality of paths in the radio frequency switch is enabled, and at least one output, configured to output an auxiliary voltage, derived from at least one of the first control signal or the second control signal, that is used to operate the radio frequency switch. The auxiliary voltage may be a bias voltage and/or a voltage used to power an inverter used to enable a selected branch as an isolation branch or shunt branch.

Abstract: An electronic circuit comprising a transistor-based RF (radio frequency) power amplifier (112) having balanced outputs (172, 176), a transistor-based receiver RF amplifier (116) having balanced inputs (152, 156) ohmically connected to said balanced outputs (172, 176) respectively of said RF power amplifier (112), and a balun (114) having a primary (182, 186) and a secondary (188), said primary (182, 186) having primary connections and a supply connection (185) of said primary (182, 186) intermediate said primary connections and said primary connections ohmically connected both to said balanced outputs (172, 176) of said RF power amplifier (112) respectively and to said balanced inputs (152, 156) of said receiver RF amplifier, thereby to switchlessly couple RF between the balun (114) and the RF power amplifier (112) and switchlessly couple RF between the balun (114) and the receiver RF amplifier (116). Other electronic circuits, processes, devices and systems are disclosed.

Abstract: An integrated circuit comprising a plurality of sensors configured to sense variations in supply voltage levels at points within the integrated circuit is disclosed. The plurality of sensors are distributed across the integrated circuit and have transistor devices such that process variations in the transistor devices within the sensors are such that a sensing result will have a random voltage offset that has a predetermined probability of lying within a pre-defined voltage offset range. The integrated circuit is configured to transmit results from multiple ones of the plurality of sensors to processing circuitry such that the variations in the supply voltage levels can be determined with a voltage offset range that is reduced compared to the pre-defined voltage offset range.

Abstract: A transistor operating method is applicable to a transistor including a first gate, a first gate insulating layer, a semiconductor layer, a source, a drain, a second gate insulating layer and a second gate. The transistor operating method includes: grounding the first gate and the source, applying a negative bias to the second gate and applying a positive bias to the drain, so that the transistor acts as an optical detector; alternatively, grounding the source, grounding or floating the second gate, applying a bias to the first gate and applying a positive bias to the drain, so that the transistor acts as a pixel switch.

Abstract: A compensating device is used for providing current compensation of an IC when operating in the high-voltage. The current compensating device includes a detecting unit, a rectifier, a filtering unit and a switching unit. The detecting unit electrically connected to an AC voltage. The rectifier is electrically connected to the detecting unit. The filtering unit is electrically connected to the rectifier. The switching unit is electrically connected to the filtering unit. The switching unit is conducted and provides a current to the IC when the AC voltage is above a predetermined voltage.

Abstract: A voltage booster device may include a plurality of multiplication stages arranged in a sequence so that an input terminal of each multiplication stage, with the exception of a first multiplication stage, is connected to an output terminal of a previous multiplication stage. Each multiplication stage may include pumping circuitry for accumulating an electric charge proportional to a pump voltage value of the multiplication stage. Each multiplication stage may also include a phase signal generating circuit for switching the multiplication stages between a transfer phase and a maintaining phase. In at least one of the stages, the pumping circuitry may include at least two series connected charge accumulators. A terminal may be shared between the charge accumulators and may be connected through biasing circuitry to an output terminal of a previous multiplication stage for forcing the charge accumulators within a threshold potential drop value.

Abstract: A device includes a source for transmitting an electronic charge through a conduction path; a drain for receiving the electronic charge; a stack for providing at least part of the conduction path; and a gate operatively connected to the stack for controlling a conduction of the electronic charge. The stack includes an insulator layer, an N-polar layer and a barrier layer selected such that, during an operation of the device, the conduction path formed in the N-polar layer includes a two-dimensional electron gas (2DEG) channel and an inversion carrier channel.

Abstract: The present invention relates to an electronic device, which comprises: a first module, comprising an I/O pad for being an interface between the electronic device and an external device, and receiving a first bias source; a second module, coupled to the first module, comprising a register, and receiving a second bias source; and a signal converter, coupled between the first module and the second module. Wherein when one of the first and second bias sources is stable and the other is unstable, the signal converter outputs a first predetermined bias value to the first or second modules receiving the unstable bias source.