Abstract: An embodiment apparatus includes a dielectric layer, a conductive trace in the dielectric layer, and a bump pad. The conductive trace includes a first portion having an exposed top surface, wherein the exposed top surface is recessed from a top surface of the dielectric layer. Furthermore, the bump pad is disposed over and is electrically connected to a second portion of the conductive trace.

Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.

Abstract: A package includes first package component and a second package component. The first package component includes a first electrical connector at a surface of the first package component, and a first solder region on a surface of the first electrical connector. The second package component includes a second electrical connector at a surface of the second package component, and a second solder region on a surface of the second electrical connector. A metal pin has a first end bonded to the first solder region, and a second end bonded to the second solder region.

Abstract: A method comprises attaching a semiconductor die on a first side of a wafer, attaching a first top package on the first side of the wafer and attaching a second top package on the first side of the wafer. The method further comprises depositing an encapsulation layer over the first side of the wafer, wherein the first top package and the second top package are embedded in the encapsulation layer, applying a thinning process to a second side of the wafer, sawing the wafer into a plurality of chip packages and attaching the chip package to a substrate.

Abstract: A flexible microsystem structure is provided. The flexible microsystem structure includes a flexible substrate; and a chip disposed over the flexible substrate, wherein the chip is bonded to the flexible substrate by a plurality of bonding elements disposed over the flexible substrate; wherein the flexible substrate has at least one trench disposed under the chip and disposed along at least one side of at least one of the bonding elements.

Abstract: Methods and apparatus for a forming molded underfills. A method is disclosed including loading a flip chip substrate into a selected one of the upper mold chase and lower mold chase of a mold press at a first temperature; positioning a molded underfill material in the at least one of the upper and lower mold chases while maintaining the first temperature which is lower than a melting temperature of the molded underfill material; forming a sealed mold cavity and creating a vacuum in the mold cavity; raising the temperature of the molded underfill material to a second temperature greater than the melting point to cause the molded underfill material to flow over the flip chip substrate forming an underfill layer and forming an overmolded layer; and cooling the flip chip substrate to a third temperature substantially lower than the melting temperature of the molded underfill material. An apparatus is disclosed.

Abstract: A semiconductor wafer stack and a method of forming a semiconductor device is disclosed. The method includes providing first and second wafers with top and bottom surfaces. The wafers include edge and non-edge regions, and the first wafer includes devices formed in the non-edge region. A first protection seal may be formed at the edge region of the first wafer. The first and second wafers may further be bonded to form a device stack. The protection seal in the device stack contacts the first and second wafers to form a seal, and protects the devices in subsequent processing.

Abstract: An apparatus includes a first semiconductor device including a NAND flash memory core. The apparatus also includes a second semiconductor device including periphery circuitry associated with the NAND flash memory core.

Abstract: A semiconductor device in which reliability of a bonding pad to which a conductive wire is bonded is achieved. A bonding pad having an OPM structure is formed of an Al—Cu alloy film having a Cu concentration of 2 wt % or more. By increasing the Cu concentration, the Al—Cu alloy film forming the bonding pad is hardened. Therefore, the bonding pad is difficult to be deformed by impact in bonding of a Cu wire, and deformation of an OPM film as following the deformation of the bonding pad can be reduced. In this manner, concentration of a stress on the OPM film caused by the impact from the Cu wire can be reduced, and therefore, the breakage of the OPM film can be prevented.

Abstract: A mask blank substrate is provided with a substrate mark comprising an oblique section. The inclination angle of the substrate mark with respect to a main surface is greater than 45° and less than 90° and the distance from the boundary between the main surface and the substrate mark to the outer periphery of the mask blank substrate is less than 1.5 mm.

Abstract: The present invention provides a flexible device carrier for a flexible display panel and a method for attaching a membrane on the flexible device. The flexible device carrier comprises: a bottom plate; a position-limiting plate provided opposite to the bottom plate and detachably mounted on the bottom plate through a position-limiting mechanism, wherein a slotted hole is provided on the position-limiting plate to match with one side of the bottom plate facing the position-limiting plate, so as to form a positioning groove for the flexible device. By using the flexible device carrier, the membrane can be tightly attached on the side of the flexible device away from the bottom plate of the flexible device carrier, reducing probability of defects such as occurrence of bubbles between the membrane and the flexible device, improving quality of attaching the membrane on the flexible device and improving product yield of the flexible display panel.

Abstract: The invention proposes a semiconductor device package structure, comprising a substrate, an adhesive layer and a die. The substrate has electrical through-holes to inter-connect a first and second wiring circuit on a top surface and a bottom surface of the substrate respectively, wherein a contact conductive bump is formed on the first wiring circuit. The under-fill adhesive layer is formed on the top surface and the first wiring circuit of the substrate except the area of the die. The die has a bump structure on the bonding pads of the die, wherein the bump structure of the die is electrically connected to the contact conductive bump of the first wiring circuit of the substrate.

Abstract: A device includes an inter-layer dielectric, a device die under the inter-layer dielectric; and a die-attach film under the inter-layer dielectric and over the device die, wherein the die-attach film is attached to the device die. A plurality of redistribution lines includes portions level with the die-attach film. A plurality of Z-interconnects is electronically coupled to the device die and the plurality of redistribution lines. A polymer-comprising material is under the inter-layer dielectric. The device die, the die-attach film, and the plurality of Z-interconnects are disposed in the polymer-comprising material.

Abstract: A method for protecting an electrical component in a support layer of a functional laminate comprises the steps of providing the support layer with a first hole, a second hole and an opening connecting the first and the second holes together, positioning an electrical component inside the first hole, placing a patch of plastic material in the second hole, and causing the material of the patch to flow through the opening from the second hole to the first hole, flowing around the electrical component in order to surround it.

Abstract: This invention can reduce heat that is generated in a first semiconductor chip and transfers to a second semiconductor chip through through-silicon vias. The first semiconductor chip has the first through-silicon vias. Each of the first through-silicon vias is arranged on any of grid points arranged in m rows and n columns (m>n). The first semiconductor chip also has a first circuit formation area. A first circuit is formed in the first circuit formation area. The first circuit performs signal processing while communicating with the second semiconductor chip. In plan view, the first circuit formation area does not overlap with a through-silicon via area that is defined by coupling the outermost grid points arranged in m rows and n columns. In plan view, some of connection terminals are located between the first circuit formation area and the through-silicon via area.

Abstract: This invention prevents a substrate of a semiconductor chip that has through-silicon vias collectively arranged in a specific area thereof from becoming cracked. When a direction in parallel with a long side of a first semiconductor chip is defined as a row direction and a direction perpendicular to the long side of the first semiconductor chip is defined as a column direction, each one of the first through-silicon vias is arranged on any one of grid points arranged in m rows and n columns (m>n). In addition, as viewed in a cross section taken along a short side of the first semiconductor chip, the center of a through-silicon via area, which is defined by coupling the outermost grid points arranged in m rows and n columns, is off center of the short side of the first semiconductor chip in a first direction.

Abstract: An optoelectronic component including a housing having at least one first cutout and at least one first semiconductor chip arranged in the first cutout, wherein the first cutout is a first reflector that reflects radiation generated during operation of the first semiconductor chip, the first reflector has a surface, and the surface has a targeted setting of an emission characteristic of the radiation emitted by the first semiconductor chip during operation.

Abstract: A method of manufacturing a thin support package structure includes the steps of: preparing a support plate formed with a plurality of grooves adjacent to an outer rim thereof, forming a releasing material layer on the support plate; forming a first circuit layer on the releasing material layer so as to form a thin circuit board; forming a dielectric layer on the releasing material layer; forming a plurality of openings in the dielectric layer; forming a second circuit layer on the dielectric layer; forming connection plugs by filling the openings; forming a solder mask on the dielectric layer; forming a plurality of notches on the lower surface of the support plate to communicate with the grooves, respectively; and removing the central part of the support plate between the notches and the central part of the releasing material layer on the support plate.

Abstract: A stack package includes a substrate having connection terminals and a first chip on the substrate. The first chip has first connectors on edges thereof. A second chip is stacked on the first chip to expose outer portions of the first connectors. The second chip has second connectors on edges thereof. Connection members to connect the exposed outer portions of the first connectors to the connection terminals. Sidewall interconnectors to connect the exposed outer portions of the first connectors to the second connectors. The sidewall interconnectors extend from the exposed outer portions of the first connectors along sidewalls of the second chip to cover the second connectors.

Abstract: The invention relates to an integrated chip with an MEMS and an integrated circuit mounted therein and a method for manufacturing the same. The method includes the steps of: S1: providing a first chip, wherein the first chip comprises a first substrate, an MEMS component layer formed on the first substrate and comprising a first electrical bonding point disposed on MEMS the component layer; S2: providing a second chip with an IC integrated circuit, wherein the second chip comprises a second lead layer and a second electrical bonding point; S3: bonding the first electrical bonding point and the second electrical bonding point; S4: processing a thinning operation for the bottom surface of the first substrate; and S5: forming an electrical connection layer electrically connected to an external circuit on the bottom surface of the first substrate.

Abstract: An integrated circuit package system with multi-chip module is provided including: providing an upper substrate having an upper chip thereon; positioning a lower chip under the upper chip, the lower chip having bottom interconnects thereon; encapsulating the upper chip and the lower chip with a chip encapsulant on the upper substrate with the bottom interconnects exposed; mounting the lower chip over a lower substrate with a gap between the chip encapsulant and the lower substrate; and filling the gap with a package encapsulant or chip attach adhesive.

Abstract: A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.

Abstract: A method of forming a plurality of bump structures on a substrate includes forming an under bump metallurgy (UBM) layer on the substrate, wherein the UBM layer contacts metal pads on the substrate. The method further includes forming a photoresist layer over the UBM layer, wherein the photoresist layer defines openings for forming the plurality of bump structures. The method further includes plating a plurality of layers in the openings, wherein the metal layers are part of the plurality of bump structures. The method further includes planarizing the plurality of bump structures after the metal layers are plated to a targeted height from a surface of the substrate.

Abstract: A semiconductor wafer contains a plurality of semiconductor die each having a plurality of contact pads. A sacrificial adhesive is deposited over the contact pads. Alternatively, the sacrificial adhesive is deposited over the carrier. An underfill material can be formed between the contact pads. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier such that the sacrificial adhesive is disposed between the contact pads and temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier and sacrificial adhesive is removed to leave a via over the contact pads. An interconnect structure is formed over the encapsulant. The interconnect structure includes a conductive layer which extends into the via for electrical connection to the contact pads. The semiconductor die is offset from the interconnect structure by a height of the sacrificial adhesive.

Abstract: A method includes applying a polymer-comprising material over a carrier, and forming a via over the carrier. The via is located inside the polymer-comprising material, and substantially penetrates through the polymer-comprising material. A first redistribution line is formed on a first side of the polymer-comprising material. A second redistribution line is formed on a second side of the polymer-comprising material opposite to the first side. The first redistribution line is electrically coupled to the second redistribution line through the via.

Abstract: A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points.

Abstract: A preparation method for a power semiconductor device includes: providing a lead frame containing a plurality of chip mounting units, one side edge of a die paddle of each chip mounting unit is bent and extended upwardly and one lead connects to the bent side edge of the die paddle and extends in an opposite direction from the die paddle; attaching a semiconductor chip to the top surface of the die paddle; forming metal bumps on each electrode at the front of the semiconductor chip with a top end of each metal bump protruding out of a plane of the top surface of the lead; heating the metal bump and pressing a top end of each metal bump by a pressing plate forming a flat top end surface that is flush with the top surface of the lead; and cutting the lead frame to separate individual chip mounting units.

Abstract: A system and method for manufacturing a through silicon via is disclosed. An embodiment comprises forming a through silicon via with a liner protruding from a substrate. A passivation layer is formed over the substrate and the through silicon via, and the passivation layer and liner are recessed from the sidewalls of the through silicon via. Conductive material may then be formed in contact with both the sidewalls and a top surface of the through silicon via.

Abstract: A substrate bonding method is able to reliably bond substrates while avoiding a reduction in yield made worse by finer pitches. The substrate bonding method can include: forming an adhesive resin layer on a surface of a first substrate on which a pad has been formed; forming an opening on the adhesive resin layer above the pad; filling the opening with molten solder to form a pillar-shaped solder bump; and applying heat and pressure to the first substrate and a second substrate while a terminal formed on the second substrate is aligned with the solder bump.

Abstract: A semiconductor package includes a circuit board having an inner circuit pattern and a plurality of contact pads connected to the inner circuit pattern, at least one integrated circuit (IC) device on the circuit board and making contact with the contact pads, a mold on the circuit board, the mold fixing the IC device to the circuit board, and a surface profile modifier on a surface of the IC device and a surface of the mold, and the surface profile modifier enlarging a surface area of the IC device and the mold to dissipate heat.

Abstract: A semiconductor device has a semiconductor die with an encapsulant deposited over and around the semiconductor die. An interconnect structure is formed over a first surface of the encapsulant. An opening is formed from a second surface of the encapsulant to the first surface of the encapsulant to expose a surface of the interconnect structure. A bump is formed recessed within the opening and disposed over the surface of the interconnect structure. A semiconductor package is provided. The semiconductor package is disposed over the second surface of the encapsulant and electrically connected to the bump. A plurality of interconnect structures is formed over the semiconductor package to electrically connect the semiconductor package to the bump. The semiconductor package includes a memory device. The semiconductor device includes a height less than 1 millimeter. The opening includes a tapered sidewall formed by laser direct ablation.

Abstract: An electronic chip including a semiconductor substrate (1) covered with an insulating layer (4) including metal interconnection levels (3) and interconnection pillars (10) connected to said metal interconnection levels (3), said pillars (110) forming regions (111) protruding from the upper surface of said insulating layer (4) and capable of forming an electric contact, wherein said pillars (110) have a built-in portion (115) in a housing formed across the thickness of at least said insulating layer (4).

Abstract: Integrated circuits are packaged by placing a plurality of semiconductor dies on a support substrate, each one of the semiconductor dies having a plurality of terminals at a side facing the support substrate and covering the semiconductor dies with a molding compound to form a molded structure. The support substrate is then removed from the molded structure to expose the side of the semiconductor dies with the terminals, and a metal redistribution layer is formed on the molded structure and in direct contact with the terminals of the semiconductor dies and the molding compound. The redistribution layer is formed without first forming a dielectric layer on a side of the molded structure with the terminals of the semiconductor dies. A corresponding molded substrate and individual molded semiconductor packages are also disclosed.

Abstract: A semiconductor device includes, a lead frame having a die pad and a plurality of leads each disposed around the die pad, a semiconductor element rested on the die pad of the lead frame, and bonding wires for electrically interconnecting the lead of the lead frame and the semiconductor element. The lead frame, the semiconductor element, and the bonding wires are sealed with a sealing resin section. The sealing resin section includes a central region provided over and around the semiconductor device, and a marginal region provided in the periphery of the central region. Thickness of the central region is greater than that of the marginal region.

Abstract: A chip package includes an optical integrated circuit (such as a hybrid integrated circuit) and an integrated circuit that are adjacent to each in the chip package. The integrated circuit includes electrical circuits, such as memory or a processor, and the optical integrated circuit communicates optical signals with very high bandwidth. Moreover, a front surface of the integrated circuit is electrically coupled to a front surface of the optical integrated circuit by a top surface of the interposer, where the top surface faces the front surface of the integrated circuit and the front surface of the optical integrated circuit. Furthermore, the integrated circuit and the optical integrated circuit may be on a same side of the interposer. By integrating the optical integrated circuit and the integrated circuit in close proximity, the chip package may facilitate improved performance compared to chip packages with electrical interconnects.

Abstract: Embodiments of the present disclosure are directed toward underfill material including block copolymer. In one embodiment, an underfill material includes epoxy material and a copolymer including an epoxy-philic block and an epoxy-phobic block, wherein the epoxy-philic block is miscible in the epoxy material, the epoxy-phobic block is covalently bonded with the epoxy-philic block, the epoxy-phobic block is separated in a microphase domain within the epoxy material and the epoxy-philic block is configured to restrict thermal expansion or contraction of the epoxy material.

Abstract: Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.

Abstract: A wafer process for MCSP comprises: depositing a metal bump on bonding pads of chips; forming a first packaging layer at front surface of wafer covering metal bumps while forming an un-covered ring at the edge of wafer to expose the ends of each scribe line located between two adjacent chips; thinning first packaging layer to expose metal bumps; grinding back surface of wafer to form a recessed space and a support ring at the edge of the wafer; depositing a metal seed layer and a thick metal layer at bottom surface of wafer in recessed space in a sequence; cutting off the edge portion of wafer; and separating individual chips from wafer by cutting through first packaging layer, the wafer and the metal seed and metal layers along the scribe line.

Abstract: Provided are a three-dimensional (3D) interconnection structure and a method of manufacturing the same. The 3D interconnection structure includes a wafer that has one side of an inverted V-shape whose middle portion is convex and a lower surface having a U-shaped groove for mounting a circuit, and a first electrode formed to cover a part of the inverted V-shaped one side of the wafer and a part of the U-shaped groove.

Abstract: Disclosed are a light-emitting device and a manufacturing method thereof. A light-emitting device according to a preferred embodiment of the disclosure comprises: a frame portion having a bottom and a sidewall; a light-emitting portion which is disposed on the frame portion and emits light; and a window portion disposed over the frame portion so as to cover the light-emitting portion.

Abstract: A structure for detecting electromagnetic radiation having a predetermined wavelength. The structure includes a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation. A cover wafer is provided having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element. A bond gap spacer structure is provided for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a distance less than a fraction of the predetermined wavelength when the cover wafer is bonded to the device wafer.

Abstract: Devices employing semiconductor die having hydrophobic coatings, and related cooling methods are disclosed. A device may include at least one semiconductor die electrically coupled to a substrate by electrical contact elements. During operation the semiconductor die and the electrical contact elements generate heat. By applying hydrophobic coatings to the semiconductor die and the electrical contact elements, a cooling fluid may be used to directly cool the semiconductor die and the electrical contact elements to maintain these components within temperature limits and free from electrical shorting and corrosion. In this manner, the semiconductor die and associated electrical contact elements may be cooled to avoid the creation of damaging localized hot spots and temperature-sensitive semiconductor performance issues.

Abstract: An apparatus includes a first semiconductor device including a memory core. The apparatus also includes a second semiconductor device including periphery circuitry associated with the memory core. The second semiconductor device includes a second serializer/deserializer communication interface coupled to a first serializer/deserializer communication interface of a memory controller.

Abstract: Stacked semiconductor devices, semiconductor assemblies, methods of manufacturing stacked semiconductor devices, and methods of manufacturing semiconductor assemblies. One embodiment of a semiconductor assembly comprises a thinned semiconductor wafer having an active side releasably attached to a temporary carrier, a back side, and a plurality of first dies at the active side. The individual first dies have an integrated circuit, first through die interconnects electrically connected to the integrated circuit, and interconnect contacts exposed at the back side of the wafer. The assembly further includes a plurality of separate second dies attached to corresponding first dies on a front side, wherein the individual second dies have integrated circuits, through die interconnects electrically connected to the integrated circuits and contact points at a back side, and wherein the individual second dies have a thickness of approximately less than 100 microns.

Abstract: A protective coating for covering a biological material, the protective coating having a plurality of interconnected layers covalently bonded to each other. The plurality of interconnected layers can include at least one hyperbranched polymeric material, and at least one dendrimer. A method of forming a protective coating for covering a biological material, the method can include depositing a plurality of interconnected layers, which are covalently bonded to each other. The plurality of interconnected layers can include at least one hyperbranched polymeric material, and at least one dendrimer.

Abstract: A method and apparatus is provided for self-assembly of micro-components such as microchips onto a carrier substrate, provided with assembly locations for the components. The components are supplied to the carrier by a liquid flow, while a template substrate is arranged facing the carrier. The template is a substrate provided with openings aligned to the assembly locations. The carrier and template are submerged into a tank filled with the liquid, while the liquid flow is supplied to the template side together with the components, so that the components are guided towards the openings by the flow of liquid. Once a component is trapped into an opening of the template, substantially no further liquid flow through the opening is possible, so that following components are guided towards the remaining openings, thereby establishing a fast and reliable self-assembly process.

Abstract: Various aspects of the present disclosure provide a semiconductor device and a method for manufacturing thereof, which can facilitate stacking of semiconductor die while saving manufacturing cost. In an example embodiment, the semiconductor device may comprise a first semiconductor die, a second semiconductor die bonded to a top surface of the first semiconductor die, and a redistribution layer electrically connecting the first semiconductor die to the second semiconductor die, wherein the redistribution layer is formed to extend along surrounding side portions of the second semiconductor die.

Abstract: Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. 12) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.

Abstract: A method of making a semiconductor package can comprise forming a plurality of thick redistribution layer (RDL) traces over active surfaces of a plurality of semiconductor die that are electrically connected to contact pads on the plurality of semiconductor die, singulating the plurality of semiconductor die comprising the plurality of thick RDL traces, mounting the singulated plurality of semiconductor die over a temporary carrier with the active surfaces of the plurality of semiconductor die oriented away from the temporary carrier, disposing encapsulant material over the active surfaces and at least four side surfaces of each of the plurality of semiconductor die, over the plurality of thick RDL traces, and over the temporary carrier, forming a via through the encapsulant material to expose at least one of the plurality of thickened RDL traces with respect to the encapsulant material, removing the temporary carrier, and singulating the plurality of semiconductor die.

Abstract: Methods of and devices for providing escaping routes for the flux and gases generated to move away from the solder joint in the process of solder joint formation.