Abstract: A method and system for forming a chalcogenide or chalcopyrite-based semiconductor material provide for the simultaneous deposition of metal precursor materials from a target and Se radials from a Se radical generation system. The Se radical generation system includes an evaporator that produces an Se vapor and a plasma chamber that uses a plasma to generate a flux of Se radicals. Multiple such deposition operations may take place in sequence, each having the deposition temperature accurately controlled. The deposited material may include a compositional concentration gradient or may be a composite material, and may be used as an absorber layer in a solar cell.

Abstract: A method of making a sputtering target includes forming a sputtering target containing a relatively porous sputtering material. The sputtering material may be initially formed to be substantially free of water or treated to remove substantially all of absorbed or adsorbed water from the sputtering material. The method also includes forming a water impermeable barrier layer over the substantially water free sputtering material to completely or substantially prevent re-absorption or re-adsorption of water in the sputtering material.

Abstract: A sputtering device for depositing a deposition material from a deposition source to a deposition target, wherein a sputtering pressure between the deposition source and the deposition target is from about 6.70×10?2 Pa to about 1.34×10?1 Pa.

Abstract: A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots. Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.

Abstract: Provided is a tantalum coil for sputtering disposed between a substrate and a sputtering target, wherein the tantalum coil has irregularities so that the surface roughness Rz of the tantalum coil is 150 ?m or more and the number of threads is 15 to 30 TPI (Threads per inch) in a transverse direction and 10 to 30 TPI in a vertical direction. An object of the present invention is to take measures to prevent the sputtered grains accumulated on the surface of a tantalum coil from flaking so as to prevent the generation of particles and arcing that is caused by the flaking of the sputtered grains accumulated on the surface of the coil disposed between a substrate and a sputtering target, and the adhesion of the scattered flakes onto the substrate surface; and thereby to provide a technology of improving the quality and productivity of electronic components and stably providing semiconductor elements and devices.

Abstract: An ultracapacitor includes at least one electrode that includes carbon nanotubes. The carbon nanotubes may be applied in a variety of ways, and a plurality of layers may be included. Methods of fabrication of carbon nanotubes and ultracapacitors are provided.

Abstract: A dual purpose processing chamber is provided. The dual purpose processing chamber includes a lid disposed over a top surface of a processing region of the processing chamber. A plurality of sputter guns with a target affixed to one end of each of the sputter guns is included. The plurality of sputter guns extend through the lid of the process chamber, wherein each of the plurality of sputter guns is oriented such that a surface of the target affixed to each gun is angled toward an outer periphery of a substrate. In another embodiment, each of the sputter guns is affixed to an extension arm and the extension arm is configured to enable movement in four degrees of freedom. A method of performing a deposition process is also included.

Abstract: A system and method of forming a thin film solar cell with a metallic foil substrate are provided. After forming a semiconductor absorber film over the front surface of the metallic foil substrate a back surface of the metallic foil substrate is treated using a material removal process to form a treated back surface in a process chamber. In one embodiment, the material removal process is performed while depositing a transparent conductive layer over the semiconductor absorber film in the process chamber.

Abstract: A method and apparatus for providing uniform coatings of lithium on a substrate are provided. In one aspect of the present invention is a method of selectively controlling the uniformity and/or rate of deposition of a metal or lithium in a sputter process by introducing a quantity of reactive gas over a specified area in the sputter chamber. This method is applicable to planar and rotating targets.

Abstract: The subject of the invention is a process for obtaining a substrate coated with a photocatalytic film based on a mixed oxide of bismuth and at least one metal other than bismuth, comprising at least a step of depositing said oxide by a sputtering technique.

Abstract: A film forming method includes depositing a metal thin film on a target substrate by generating an inductively coupled plasma in a processing chamber while introducing a plasma generating gas in the processing chamber with the substrate disposed on a placing table, by supplying DC power to a metal target from a DC power source, and by applying high-frequency bias to the placing table. A resputtering method includes resputtering the deposited metal thin film by stopping the generating of the inductively coupled plasma, by stopping the power supply from the DC power source, and by applying the high-frequency bias to the placing table while introducing the plasma generating gas in the processing chamber to form a capacitively coupled plasma in the processing chamber and by attracting ions of the plasma generating gas to the target substrate where the metal thin film is deposited.

Abstract: A physical vapor deposition (PVD) system includes N coaxial coils arranged in a first plane parallel to a substrate-supporting surface of a pedestal in a chamber of a PVD system and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. Plasma is created in the chamber. A magnetic field well is created above a substrate by supplying N currents to the N coaxial coils, respectively, and M currents to the M coaxial coils, respectively. The N currents flow in a first direction in the N coaxial coils and the M second currents flow in a second direction in the M coaxial coils that is opposite to the first direction. A recessed feature on the substrate arranged on the pedestal is filled with a metal-containing material by PVD using at least one operation with high density plasma having a fractional ionization of metal greater than 30%.

Abstract: First and second electrodes are apart from each other in a chamber. Plates are disposed on a substrate in the second electrode. Each of the plates comprises first and second parts for supplying first and second gas to a space between the first and second electrodes, respectively, a first supply path for first gas connected to the first part, and a second supply path for second gas connected to the second part. The substrate comprises a heater for the first gas, a first introducing path for introducing the first gas to the first supply path, and a second introducing path for introducing the second gas to the second supply path. The second supply path comprises a mainstream part without the second part and branch parts with the second part. A connecting portion of the second introducing path and the mainstream part is positioned in an adjacent portion of the plates.

Abstract: A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.

Abstract: When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.

Abstract: A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and forming a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes.

Abstract: To provide a high-throughput film formation apparatus and manufacturing apparatus. A plurality of substrates are placed between a pair of sputtering targets and film formation are performed at one time. EL layers are formed with an evaporation apparatus, and then electrode layers or protective layers are formed with a sputtering apparatus at one time. The film formation is performed with the surfaces of the plurality of substrates set substantially perpendicular to the surface of at least one of the sputtering targets. Note that the electrode layer or the protective layer can be selectively formed using a mask so that a film is not formed over at least a peripheral portion of the substrate by sputtering.

Abstract: A method and apparatus for forming a thermal barrier coating system in communication with at least a portion of at least one substrate. The method includes: depositing a first bond coat on at least a portion of at least one substrate; depositing a first thermal barrier coat disposed on the bond coat; whereby the deposition occurs in one or more chambers to form the thermal barrier coating system; and wherein the deposition of the first bond coat (or subsequent bond coats) and the deposition of the first thermal barrier coat (or subsequent thermal barrier coats) is performed without out-of chamber handling of the thermal barrier coating system.

Abstract: A resin product manufacturing system includes: molding apparatuses for forming substrates; a substrate removal apparatus for removing the substrates from the molding apparatuses; a metal film deposition apparatus for forming a metal film on the substrates to obtain intermediate products; a substrate carrying machine for carrying the substrates into the metal film deposition apparatus; an intermediate product removal machine for removing the intermediate products from the metal film deposition apparatus; a coating film forming apparatus for forming a coating film on the intermediate products to obtain resin products; an intermediate product carrying machine for carrying the intermediate products into the coating film forming apparatus; first and second transfer apparatuses for transferring the substrates; a first control unit for controlling the substrate removal apparatus; a second control unit for controlling the intermediate product removal apparatus and the metal film deposition apparatus; and a third cont

Abstract: An apparatus and method for manufacturing polycarbonate solar cells. The apparatus is designed to adapt many techniques used in the compact disc manufacturing industry to the manufacture of polycarbonate solar cells.

Abstract: Ultrahigh purity copper having a residual resistance ratio of 38,000 or greater and a purity of 8N or higher (excluding gas components), and in particular ultrahigh purity copper wherein the respective elements of O, C, N, H, S and P as gas components are 1 ppm or less. Further provided is a method of subjecting copper to high purification. An anode and a cathode are partitioned with an anion exchange membrane, an anolyte is intermittently or continuously extracted and introduced into an active carbon treatment vessel, a chlorine-containing material is added to the active carbon treatment vessel so as to precipitate impurities as chloride, active carbon is subsequently poured in and agitated so as to adsorb the precipitated impurities, the adsorbed impurities are removed by filtration, and the obtained high purity copper electrolytic solution is intermittently or continuously introduced into the cathode side and electrolyzed.

Abstract: A method for depositing a getter for encapsulation in a device cavity containing a microdevice comprises depositing the getter material while the device wafer and lid wafer are enclosed in a bonding chamber. A plasma sputtering process may be used, wherein by applying a large negative voltage to the lid wafer, a plasma is formed in the low pressure environment within the bonding chamber. The plasma then sputters the getter material from a getter target, and this getter material is directly thereafter sealed within the device cavity of the microdevice, all within the deposition/bonding chamber.

Abstract: Provided is a thin film depositing apparatus. The thin film depositing apparatuses includes: a chamber where a process is performed on a subject to be processed; a plurality of supporters supporting the subject to be processed in the chamber; at least one sputter gun inducing a first plasma below or on the subject to be processed between the plurality of supporters; and a plurality of inductive coupled plasma tubes inducing a more expanded second plasma than the first plasma between the sputter gun and the subject to be processed.

Abstract: Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged from the nozzle part under a vacuum atmosphere. By doing this, the mixed gas is adiabatically expanded and the Ar atoms or ClF3 molecules are combined, which become a gas cluster. The gas cluster is irradiated to the surface of the silicon substrate without being ionized and, as a result, the surface of the silicon surface becomes a porous state. Then, lithium is grown on the surface of the silicon substrate in a separate vacuum chamber 41 by sputtering without breaking the vacuum.

Abstract: A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.

Abstract: A method and system for depositing a thin film on a substrate. In the system a target material is deposited and reacted on a substrate surface to form a substantially non-absorbing thin film. The volume of non-absorbing thin film formed per unit of time may be increased by increasing the area of the surface by a factor of “x” and increasing the rate of deposition of the target material by a factor greater than the inverse of the factor “x” to thereby increase the rate of formation of the volume of non-absorbing thin film per unit of time.

Abstract: A rotary sputtering cathode, including a tubular member having a length in a longitudinal direction and defining an external surface, a first longitudinal bracket extending in the longitudinal direction along the length of the tubular member, and a second longitudinal bracket extending in the longitudinal direction along the length of the tubular member, is provided. Additional longitudinal brackets (e.g., a third, fourth, fifth, and so forth,) may also be included along the length of the tubular member. A target, which comprises a sputtering material, can be positioned such that its back surface is facing the external surface of the tubular member. The first longitudinal bracket and the second longitudinal bracket removably hold the first target therebetween such that the first back surface of the first target is facing the external surface of the tubular member. Methods are also provided for sputtering a non-bonded target.

Abstract: Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.

Abstract: A method of fabricating media comprises forming recording media on a substrate. An overcoat is deposited on the recording media opposite the substrate. The overcoat has a first surface finish. The overcoat is etched to remove material and provide the overcoat with a second surface finish that is smoother than the first surface finish. The depositing and etching may occur sequentially in an in-situ, dry vacuum process. The second surface finish may not be mechanically processed after etching to further planarize the overcoat.

Abstract: Apparatuses for deposition of one or more layers. In one aspect, an apparatus for deposition of one or more layers includes an anode; a cathode; a vacuum chamber including the anode and the cathode; a sensor configured to detect an electric potential between a section of the at least one anode and a section of the chamber. Furthermore, methods to monitor a device for deposition of one or more layers are also described.

Abstract: A consumable isolation ring of a movable substrate support assembly is described. The consumable isolation ring is configured to be supported on a step of a movable ground ring fit around a fixed ground ring. The consumable isolation ring is configured to electrically isolate the movable ground ring from a dielectric ring of the movable substrate support assembly.

Abstract: Described herein is a confinement ring useful as a component of a capacitively-coupled plasma processing chamber. Inner surfaces of the confinement ring provide an extended plasma confinement zone surrounding a gap between an upper electrode and a lower electrode on which a semiconductor substrate is supported during plasma processing in the chamber.

Abstract: The present invention refers to a coating device for coating of substrates comprising at least two process chambers (1, 2, 3, 4) being disposed adjacent to each other, a separating plate (9) between the two adjacent process chambers, and pumping means (12, 13) for evacuating the process chambers, wherein the separating plate (9) comprises a conduit having at least two ends, one end of which is connected with the pumping means and the other end has at least one suction opening for at least one of the process chambers.

Abstract: The present invention refers to a coating device for coating of substrates comprising at least two process chambers (1, 2, 3, 4) being disposed adjacent to each other, a separating plate (9) between the two adjacent process chambers, and pumping means (12, 13) for evacuating the process chambers, wherein the separating plate (9) comprises a conduit having at least two ends, one end of which is connected with the pumping means and the other end has at least one suction opening for at least one of the process chambers.

Abstract: The present invention refers to a coating device for coating of substrates comprising at least two process chambers (1, 2, 3, 4) being disposed adjacent to each other, a separating plate (9) between the two adjacent process chambers, and pumping means (12, 13) for evacuating the process chambers, wherein the separating plate (9) comprises a conduit having at least two ends, one end of which is connected with the pumping means and the other end has at least one suction opening for at least one of the process chambers.

Abstract: Methods and devices for etching a device precursor are provided. For example, a method includes: providing a substrate, determining a temperature associated with the substrate, and etching a metal oxide layer of the substrate, wherein the etching is controlled based on the determined temperature.

Abstract: A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.

Abstract: The system (1) for the continuous vacuum coating of a continuously suppliable material in web form (2) provided with feed means; at least one inlet chamber (4), wherein the transition between the inlet atmospheric pressure and the vacuum pressure of a coating chamber (5) incorporating at least one vacuum deposition module (6) for depositing metallic and/or dielectric components on the material in web form is carried out; at least one outlet chamber (7); and collecting means (8) which collect the coated material in web form. The system further comprises drive and support means (9), on which the material in web form is fixed for its transport and by one of its faces, which material follows a preferably straight path at least through the coating chamber.

Abstract: A hydrogen gas detecting material, which changes in light absorption characteristics when exposed to an atmosphere containing hydrogen, and the coating method are characterized in that (1) the principal component of the hydrogen gas detecting material is tungsten oxide, (2) palladium is deposited on the surface of the tungsten oxide, (3) the tungsten oxide is coated on a substrate by a sputtering method involving a controlled oxygen pressure, and (4) the temperature of the substrate during coating with the tungsten oxide is room temperature (20° C.).

Abstract: Systems and methods for deposition of a thin film layer on photovoltaic (PV) module substrates are generally provided. The system can include a sputtering chamber configured to receive the substrates, at least two targets positioned within the sputtering chamber, and an independent power source connected to each target. Each target can be positioned within the sputtering chamber to face the substrates such that the targets are simultaneously sputtered to supply source material to a plasma field for forming a thin film layer on a surface of the substrates. The multiple targets can also be positioned such that a facing axis extending perpendicularly from a center of each target converges at a point on the surface of the substrate.

Abstract: A system and related method for deposition of multiple thin film layers on photovoltaic (PV) module substrates includes a first processing side wherein the substrates are conveyed in a first direction for deposition of a first thin film layer on the substrates. A second processing side is operably disposed relative to the first processing side such that substrates exiting the first processing side are subsequently conveyed in a second direction through the second processing side for deposition of a second thin film layer on the first thin film layer. A first transfer station is operably disposed between the first processing side and the second processing side to receive the substrates from an exit of the first processing side and to introduce the substrates into an entry of the second processing side such that the substrates are continuously moved through the first and second processing sides for deposition of multiple thin film layers thereon.

Abstract: The present invention relates to a magnetron sputtering device including a large ring cathode having a defined inner radius. The position of the ring cathode is offset in relation to a center point of a planetary drive system. An anode or reactive gas source may be located within the inner radius of the ring cathode. Lower defect rates are obtained through the lower power density at the cathode which suppresses arcing, while runoff is minimized by the cathode to planet geometry without the use of a mask.

Abstract: An object of one embodiment of the present invention is to provide a deposition apparatus for depositing an oxide semiconductor film into which impurities are not mixed. Another object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor film into which impurities are not mixed. Impurities are removed from an environment including a deposition apparatus, whereby a gas containing impurities may be prevented from leaking from the outside of the deposition apparatus to the inside thereof. In addition, an oxide semiconductor layer containing reduced impurities which is deposited by the apparatus may be applied to the semiconductor device.

Abstract: The embodiments of the present invention generally relates to methods for enhancing the light extraction by surface roughening of the bottom n-GaN layer and/or top p-GaN layer so that the internal light from the active region is scattered outwardly to result in a higher external quantum efficiency. In one embodiment, a surface roughening process is performed on the n-GaN layer to form etching pits in a top surface of the n-GaN layer. Once the etching pits are formed, growth of the n-GaN material may be resumed on the roughened n-GaN layer to partially fill the etching pits, thereby forming air voids at the interface of the n-GaN layer and the subsequent, re-growth n-GaN layer. These air voids provide one or more localized regions with indices of reflection different from that of the n-GaN layer, such that the internal light generated by the active layers (e.g., the InGaN MQW layer), when passing through the n-GaN layer, is scattered by voids or bubbles.

Abstract: A photocatalyst according to the invention comprises a photocatalytic film of a compound of titanium and oxygen and is characterized in that the photocatalytic film is made porous and has 0.02 or higher value as a value calculated by dividing the arithmetical mean deviation of profile Ra with the film thickness. The photocatalytic film can also be specified by the intensity ratio between x-ray diffraction peaks of the anatase structure of titanium oxide. Such a porous photocatalytic material can be obtained by a reactive sputtering method in conditions of adjusting film formation parameters such as the film formation rate, the sputtering pressure, the substrate temperature, the oxygen partial pressure and the like in proper ranges, respectively, and the photocatalyst material is provided with excellent decomposition and hydrophilization capability.

Abstract: In one embodiment, a method is disclosed for manufacturing a device including forming a film on an object of processing using sputtering. The method can form a first film of a first sputtered particle on the object of processing at a first position. The first sputtered particle travels in a direction intersecting a major surface of a sputtering target. The object of processing and the sputtering target do not overlap as viewed in plan at the first position. In addition, the method can form a second film of a second sputtered particle on the first film at a second position. The second sputtered particle travels in a direction substantially orthogonal to the major surface of the sputtering target. The object of processing and the sputtering target at least partially overlap as viewed in plan at the second position. The second sputtered particle is screened in the case where the object of processing not having the first film formed on the object of processing is at the second position.

Abstract: An object of the present invention is to provide an apparatus for successive deposition used for manufacturing a semiconductor element including an oxide semiconductor in which impurities are not included. By using the deposition apparatus capable of successive deposition of the present invention that keeps its inside in high vacuum state, and thus allows films to be deposited without being exposed to the air, the entry of impurities such as hydrogen into the oxide semiconductor layer and the layer being in contact with the oxide semiconductor layer can be prevented; as a result, a semiconductor element including a high-purity oxide semiconductor layer in which hydrogen concentration is sufficiently reduced can be manufactured. In such a semiconductor element, off-state current is low, and a semiconductor device with low power consumption can be realized.

Abstract: In an automatic matching unit, a controller includes a first and a second matching algorithm. The operating point Zp is moved stepwise toward the matching point Zs with a relatively large pitch by using the first matching algorithm. Further, when the operating point Zp is within the outer proximity range, the operating point Zp is moved stepwise toward the matching point Zs with a relatively small pitch by using the second matching algorithm. In the second matching algorithm, the operating point Zp is moved close to the third reference line TC1S or TC2S perpendicular to the first or second reference line C1S or C2S along, e.g., the route Zp(7)->Zp(8)->Zp(9) on the impedance coordinates. The coordinates of the operating point Zp(9) reaches an available quasi-matching point ZB extremely close to the origin O (the matching point Zs).

Abstract: The present disclosure relates to a method for producing an indium-tin-oxide layer, comprising: providing a substrate to be coated in a sputtering chamber; providing a rotatable non-bonded target around a backing tube for coating the substrate in the sputtering chamber; and sputtering the material from the target in an atmosphere containing an O2/H2 mixture. Further the present disclosure relates to a sputtering system comprising a sputtering chamber having at least one gas inlet and being adapted for at least one backing tube for a non-bonded rotatable target, a control device adapted to control the flow through the gas inlet, wherein the control device is adapted to control the at least one gas inlet such that a coating on a substrate using a sputtering process is performed in an atmosphere containing an O2 /H2 mixture in the sputtering chamber for forming an indium-tin-oxide layer.

Abstract: A film forming method for an antireflection film that has a first indium oxide-based thin film and a second indium oxide-based thin film that is laminated on the first indium oxide-based thin film, including a first film forming step that forms the first indium oxide-based thin film by performing sputtering using a first indium oxide-based target in a first reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor; and a second film forming step that forms on the first indium oxide-based thin film the second indium oxide-based thin film by performing sputtering using a second indium oxide-based target in a second reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor, and that has a different composition from the first reactive gas.