Abstract: According to example embodiments, a photodiode system may include a substrate, and at least one photodiode in the substrate, and a wideband gap material layer on a first surface of the substrate. The at least one photodiode may be between an insulating material in a horizontal plane. According to example embodiments, a back-side-illumination (BSI) CMOS image sensor and/or a solar cell may include a photodiode device. The photodiode device may include a substrate, at least one photodiode in the substrate, a wide bandgap material layer on a first surface of the substrate, and an anti-reflective layer (ARL) on the wide bandgap material layer.

Abstract: A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

Abstract: A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixel includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Abstract: An image sensor includes a charge accumulation region of a first conductivity type, an isolating semiconductor region formed from an impurity semiconductor region of a second conductivity type, a channel stop region formed from an impurity semiconductor region of the second conductivity type which is located on the isolating semiconductor region, and an insulator arranged on the channel stop region. The insulator includes a first insulating portion arranged above the isolating semiconductor region via the channel stop region, a second insulating portion arranged adjacent to an outside of the first insulating portion, wherein thickness of the second insulating potion decreases with an increase in distance from the first insulating portion, and a third insulating portion formed on the first insulating portion, wherein the third insulating portion has upper and side faces connecting the upper face to an upper face of the second insulating portion.

Abstract: The light use efficiency of a thin film diode is improved even when the semiconductor layer of the diode has a small thickness, thereby improving the light detection sensitivity of the diode. A thin film diode (130) having a first semiconductor layer (131) including, at least, an n-type region (131n) and a p-type region (131p) is provided on one side of a substrate (101), and a silicon layer (171) is provided between the substrate and the first semiconductor layer, facing the first semiconductor layer. Asperities are formed on the side of the silicon layer facing the first semiconductor layer, and asperities are provided on the side of the first semiconductor layer facing the silicon layer and the side thereof opposite the side facing the silicon layer.

Abstract: A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is formed by bonding two or more semiconductor chip units to each other and in which, at least, a pixel array and a multi-layer wiring layer are formed in a first semiconductor chip unit and a logic circuit and a multi-layer wiring layer are formed in a second semiconductor chip unit; a semiconductor-removed region in which a semiconductor section of a part of the first semiconductor chip unit is completely removed; and a plurality of connection wirings which is formed in the semiconductor-removed region and connects the first and second semiconductor chip units to each other.

Abstract: A light emitting diode package includes a number of light emitting diode chips, a number of color sensor modules, and a reflecting cup around the light emitting diode chips. Each light emitting diode chip has a main light emitting surface and a sub light emitting surface opposite to the main light emitting surface. Intensities of light from the light emitting diode chips are detected by the color sensor modules for adjusting color temperatures of the light from the light emitting diode chips.

Abstract: A unit pixel of an image sensor having a three-dimensional structure includes a first chip and a second chip which are stacked, one of the first chip and the second chip having a photodiode, and the other of the first chip and the second chip having a circuit for receiving information from the photodiode and outputting received information. The first chip includes a first pad which is projectedly disposed on an upper surface of the first chip in such a way as to define a concavo-convex structure, and the second chip includes a second pad which is depressedly disposed on an upper surface of the second chip in such a way as to define a concavo-convex structure corresponding to the concavo-convex structure of the first chip. The first chip and the second chip are mated with each other through bonding of the first pad and the second pad.

Abstract: An example image sensor includes first, second, and third micro-lenses. The first micro-lens is in a first color pixel and has a first curvature and a first height. The second micro-lens is in a second color pixel and has a second curvature and a second height. The third micro-lens is in a third color pixel and has a third curvature and a third height. The first curvature is the same as both the second curvature and the third curvature and the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths for the first, second, and third color pixels are the same.

Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk) so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.

Abstract: An image sensor including a deep guard ring and a noise blocking area and a method of manufacturing the same. The image sensor includes the deep guard ring and a deep P well surrounding the noise blocking area, thereby preventing crosstalk between adjacent pixels. In addition, an ion implantation layer is divided by the noise blocking area, so that substrate crosstalk is effectively eliminated.

Abstract: An imager apparatus and methods are described. An embodiment of an imager module includes a plurality of groups of optical lenses, a lens frame, and at least one associated lens barrel configured to position and hold the plurality of groups of optical lenses. At least one of the groups of optical lenses is movable with respect to at least one other group of optical lenses for achieving optical focus. The imager module includes an integrated circuit (IC) imager die in proximity to the plurality of lenses, the imager die containing at least one image capture microelectronic device.

Abstract: A photoelectric conversion device having: a pair of electrodes; a photoelectric conversion layer sandwiched between the pair of electrodes; and at least one electron blocking layer provided between one electrode of the pair of electrodes and the photoelectric conversion layer, wherein the photoelectric conversion layer contains at least one organic material, and the at least one electron blocking layer has a mixed layer containing fullerene or fullerene derivatives.

Abstract: A light-emitting integrated wafer structure, comprising: three overlying layers, wherein each of the three overlying layers emits light at a different wavelength and wherein at least one of the three overlying layers is transferred to the light-emitting integrated wafer structure using one of atomic species implants assisted cleaving, laser lift-off, etch-back, or chemical-mechanical-polishing (CMP).

Abstract: The present invention provides organic compounds which are indenobenzo[k]fluoranthene derivatives represented by the following general formula (1): In general formula (1), R1 to R14 are each independently selected from a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an amino group, an aryl group, and a heterocyclic group.

Abstract: A backside image sensor including an assembly of pixels, each pixel including, in a vertical stack, a photosensitive area and a filtering element topping the photosensitive area on the back surface side, wherein at least two adjacent filtering elements of adjacent pixels are separated by a vertical metal wall extending over at least eighty percent of the height of the filtering elements or over a greater height.

Abstract: A method for manufacturing a solid-state imaging device includes: forming pixels that receive incident light in a pixel array area of a substrate; forming pad electrodes in a peripheral area located around the pixel array area of the substrate; forming a carbon-based inorganic film on an upper surface of each of the pad electrodes including a connection surface electrically connected to an external component; forming a coated film that covers upper surfaces of the carbon-based inorganic films; and forming an opening above the connection surface of each of the pad electrodes to expose the connection surface.

Abstract: Disclosed herein is a solid-state imaging device including: a semiconductor layer including a photoelectric conversion section receiving incident light and generating a signal charge; and a light absorbing section for absorbing transmitted light transmitted by the photoelectric conversion section and having a longer wavelength than light absorbed by the photoelectric conversion section, the transmitted light being included in the incident light, the light absorbing section being disposed on a side of another surface of the semiconductor layer on an opposite side from one surface of the semiconductor layer, the incident light being made incident on the one surface of the semiconductor layer.

Abstract: According to one embodiment, a solid-state image sensing device includes a semiconductor substrate on which a plurality of pixels are arranged, a transparent substrate including a first through via provided in an opening formed in advance to extend through, an adhesive including a second through via connected to the first through via and configured to bond the semiconductor substrate and the transparent substrate while exposing the pixels, and an imaging lens unit arranged on the transparent substrate.

Abstract: An image sensor includes a device wafer including a pixel array for capturing image data bonded to a carrier wafer. Signal lines are disposed adjacent to a side of the carrier wafer opposite the device wafer and a metal noise shielding layer is disposed beneath the pixel array within at least one of the device wafer or the carrier wafer to shield the pixel array from noise emanating from the signal lines. A through-silicon-via (“TSV”) extends through the carrier wafer and the metal noise shielding layer and extends into the device wafer to couple to circuitry within the device wafer. Further noising shielding may be provided by highly doping the carrier wafer and/or overlaying the bottom side of the carrier wafer with a low-K dielectric material.

Abstract: According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

Abstract: An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

Abstract: A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

Abstract: This invention provides a solid-state image sensing apparatus in which a sensor portion that performs photo-electric conversion and plural layers of wiring lines including a signal line for the sensor portion are formed on a semiconductor substrate; which includes an effective pixel portion configured such that light enters the sensor portion, and an optical black portion shielded so that the light does not enter the sensor portion; and which has a light-receiving surface on the back surface side of the semiconductor substrate. The optical black portion includes the sensor portion, a first light-shielding film formed closer to the back surface side of the semiconductor substrate than the sensor portion, and a second light-shielding film formed closer to the front surface side of the semiconductor substrate than the sensor portion.

Abstract: Provided are a sensor array substrate, a display device including the same, and a method of manufacturing the sensor array substrate. The sensor array substrate includes: a substrate; a plurality of pixel regions defined by intersections of gate wirings and data wirings on the substrate; and a plurality of first sensor units and a plurality of second sensor units which are formed in the pixel regions. The first sensor units sense light in an infrared wavelength range, the second sensor units sense light in a visible wavelength range, two first sensor units that are disposed adjacent to each other in a data wiring direction form a first group, and two second sensor units that are disposed adjacent to each other in the data wiring direction form a second group. The first and second groups are alternately arranged in the data wiring direction and a gate wiring direction.

Abstract: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

Abstract: A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantation is performed over the substrate to implant a second doped region over the first doped region. The combined thickness of the first and second doped region is greater than 50 percent of thickness of the substrate and the distance between back surface of the substrate and the first and second doped regions is less than 50 percent of thickness of the substrate. In this way, an enlarged light sensing region is formed through which electrons generated from back surface of the surface may easily reach the pixel.

Abstract: The instant disclosure describes a photodetector that includes at least one portion of a semiconducting layer formed directly on at least a portion of a reflective layer and to be illuminated with a light beam, at least one pad being formed on the portion of the semiconducting layer opposite the reflective layer portion, wherein the pad and the reflective layer portion are made of a metal or of a negative permittivity material, the optical cavity formed between said at least one reflective layer portion and said at least one pad has a thickness strictly lower than a quarter of the ratio of the light beam wavelength to the optical index of the semiconducting layer, and typically representing about one tenth of said ratio.

Abstract: A solid-state image sensor includes first-color pixels and second-color pixels, each of the first-color pixels including a first antireflection film and a first color filter, and each of the second-color pixels including a second antireflection film and a second color filter, wherein the solid-state image sensor satisfies T1(?12)?0.95·Tmax1, and T2(?12)?0.95·Tmax2 where ?1 represents a wavelength at which a transmittance of the first color filter is maximized, ?2 represents a wavelength at which a transmittance of the second color filter is maximized, and ?12 represents a central wavelength between wavelengths ?1 and ?2, T1(?) and T2(?) respectively represent transmittances of the first antireflection film and the second antireflection film when a wavelength is represented by ?, and Tmax1 and Tmax2 represent maximum values of the transmittances T1(?) and T2(?), respectively.

Abstract: Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

Abstract: A method of resetting a photosite is disclosed. Photogenerated charges accumulated in the photosite are reset by recombining the photogenerated charges with charges of opposite polarity.

Abstract: An image sensor includes: a photoelectric conversion pixel having a photoelectric conversion element that performs photoelectric conversion, and a light guide formed of a first material in an interlayer insulation film above the photoelectric conversion element; and a light-shielded pixel having a photoelectric conversion element that performs photoelectric conversion, a light guide formed of a second material that is different from the first material in an interlayer insulation film above the photoelectric conversion element, and a light-shielding layer formed above the light guide.

Abstract: The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit.

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract: A method of manufacturing a semiconductor device includes steps of providing a substrate including a semiconductor portion, a non-porous semiconductor layer, and a porous semiconductor layer arranged between the semiconductor portion and the non-porous semiconductor layer, forming a porous oxide layer by oxidizing the porous semiconductor layer, forming a bonded substrate by bonding a supporting substrate to a surface, on a side of the non-porous semiconductor layer, of the substrate on which the porous oxide layer is formed, and separating the semiconductor portion from the bonded substrate by utilizing the porous oxide layer.

Abstract: Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.

Abstract: Fingerprint sensing circuit packages and methods of making such packages may comprise a first substrate having a top side and a bottom side; the top side comprising a fingerprint image sensing side over which a user's fingerprint is swiped; the bottom side comprising a metal layer forming a fingerprint sensing circuit image sensor structure; and a sensor control circuit housed in a sensor control circuit package mounted on the metal layer. The sensor control circuit may comprise an integrated circuit die contained within the sensor control circuit package. The fingerprint sensing circuit package may also have a second substrate attached to the bottom side of the first substrate having a second substrate bottom side on which is placed connector members connecting the fingerprint sensing circuit package to a device using a fingerprint image generated from the fingerprint sensing circuitry contained in the fingerprint sensing circuitry package.

Abstract: According to the embodiments, a solid-state imaging device is provided, which includes a first electrode film, a first photoelectric conversion film, a first conductive film, a dielectric film, a second photoelectric conversion film, and a second conductive film. The first photoelectric conversion film covers the surface and the side of the first electrode film. The first conductive film covers the light receiving surface and the side of the first photoelectric conversion film. The dielectric film covers a portion corresponding to the side of the first photoelectric conversion film in the first conductive film. The second photoelectric conversion film covers a main portion of a portion corresponding to the light receiving surface of the first photoelectric conversion film in the first conductive film. The second conductive film covers the light receiving surface and the side of the second photoelectric conversion film.

Abstract: An image sensor having greatly improved physical and electrical bonding forces between a photodiode and a substrate, and a manufacturing method thereof. The image sensor includes a semiconductor substrate and readout circuitry, a dielectric layer on the semiconductor substrate, a metal line in the dielectric layer, electrically connected with the readout circuitry, an image sensing device including first and second impurity regions on the dielectric layer, a via hole through the dielectric layer and the image sensing device, a hard mask in the via hole, and a lower electrode in the via hole to connect the first impurity region with the metal line.

Abstract: The invention relates to the fabrication of integrated circuits in general, and notably the circuits of image sensors intended to form the electronic core of photographic apparatus or cameras. The chip is first aligned with respect to the package and then the package is aligned with respect to the optical system. The alignment of the chip with respect to the package is done optically. The alignment of the package with respect to the system is done mechanically with respect to the edges of the package. According to the invention, provision is made for optical marks to be provided on the package, these marks each having an edge aligned with a lateral edge of the package, so as to minimize the positioning errors which would be due to inaccurate positioning of the chip with respect to the edges of the package.

Abstract: An image sensor includes an array of light sensitive elements and a filter array. Each filter element is in optical communication with a respective light sensitive element. The image sensor receives filtered light having a repeating pattern. Light sensitive elements in at least two successive rows alternately receive light having a first color and a second color, and light sensitive elements in common columns of the successive rows alternately receive light having the first color and the second color. Light sensitive elements in at least two additional successive rows alternately receive light having a third and a fourth color, and light sensitive elements in common columns of the additional successive rows alternately receive light having the third color and the fourth color. Output values of pairs of sampled light sensitive elements receiving light of a common color and from successive rows are combined to generate a down-sampled image.

Abstract: To provide a semiconductor device which can detect low illuminance. A photoelectric conversion element, a diode-connected first transistor, and a second transistor are included. A gate of the first transistor is electrically connected to a gate of the second transistor. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor through the photoelectric conversion element. The other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor. By using transistors which have different threshold voltages for the first transistor and the second transistor, a semiconductor device which can perform detecting of low illuminance can be obtained.

Abstract: An image sensor in accordance with embodiments disclosed herein includes an array of imaging pixels, an insulator layer, and a plurality of metal reflectors. The array of imaging pixels are disposed within a semiconductor layer, where each imaging pixel in the array of imaging pixels includes a photosensitive element configured to receive light from a backside of the image sensor. The insulator layer is disposed on a frontside of the semiconductor layer and the plurality of metal reflectors are disposed within the insulator layer to reflect the light to a respective photosensitive element. A width of each of the plurality of metal reflectors is equal to a width of a metal reflector at the center of the array multiplied by a scaling factor, where the scaling factor is dependent on a distance of the metal reflector from the center of the array.

Abstract: A solid-state imaging device receiving incident light from a backside thereof. The imaging device includes a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed, a wiring layer formed on a first surface of the semiconductor layer, a pad portion formed on a second surface of the semiconductor layer, an opening formed to reach a conductive layer of the wiring layer, and an insulating film extendedly coated from the second surface to an internal side-wall of the opening so as to insulate the semiconductor layer.

Abstract: A method of bonding a semiconductor structure to a substrate to effect both a mechanical bond and a selectively patterned conductive bond, comprising the steps of mechanically bonding a semiconductor structure to a substrate by means of a bonding layer; providing gaps in the bonding layer generally corresponding to a desired conductive bond pattern; providing vias though the substrate generally positioned at the gaps in the bonding layer; causing electrically conductive material to contact the semiconductor structure exposed through the vias. A device made in accordance with the method is also described.

Abstract: Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate. An interlayer dielectric is formed on the first substrate, and comprises a lower line therein. A crystalline semiconductor layer is bonded to the interlayer dielectric. A photodiode can be formed in the crystalline semiconductor layer, and comprises a first impurity region and a second impurity region. A via hole can be formed passing through the crystalline semiconductor layer and the interlayer dielectric to expose the lower line. A plug is formed inside the first via hole to connect with only the lower line and the first impurity region. A device isolation region can be formed in the crystalline semiconductor layer to separate the photodiode according to unit pixel.

Abstract: A light sensor includes an intrinsic layer, a first ion doping area disposed one side of the intrinsic layer, a second ion doping area disposed at the other side of the intrinsic layer, an oxide insulating layer on the intrinsic layer, and a gate metal on the oxide insulating layer. The first and second ion doping areas have the same P type or N type doped ions. The intrinsic layer further includes a first light sensing region close to the first ion doping area. The first light sensing region is used for generating electron-hole pairs based on luminance of incident light.

Abstract: Provided is a solid-state imaging device including: a first-conductivity-type substrate; a second-conductivity-type well formed in a surface side of the first-conductivity-type substrate; a photoelectric conversion area configured with a first-conductivity-type-impurity area formed in the second-conductivity-type well to convert incident light to charges; a first-conductivity-type-charge retaining area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to retain the charges converted by the photoelectric conversion area until the charges are read out; a charge voltage conversion area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to convert the charges retained in the charge retaining area to a voltage; and a first-conductivity-type-layer area configured by forming a first-conductivity-type-in a convex shape from a boundary between the first-conductivity-type substrate and the second-conductivity-type wel

Abstract: An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.

Abstract: Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel.