Abstract: This disclosure provides systems, methods and apparatus for providing multiple dielectric coatings for a shutter assembly. The multiple dielectric coatings include an outer dielectric coating and one or more inner dielectric coatings. The outer dielectric coating has an electrical trap density that is lower than electrical trap densities of the one or more inner dielectric coatings. The lower electrical trap density reduces the amount of charge buildup over various surfaces of the shutter assembly. This reduction in charge buildup also reduces electrostatic forces that may cause incorrect operation of the shutter assembly.

Abstract: A film forming method for forming a thin film including boron, nitrogen, silicon, and carbon on a surface of a processing target by supplying a boron containing gas, a nitriding gas, a silane-based gas, and a hydrocarbon gas in a processing container in which the processing target is accommodated to be vacuum sucked includes: a first process which forms a BN film by performing a cycle of alternately and intermittently supplying the boron-containing gas and the nitriding gas once or more; and a second process which forms a SiCN film by performing a cycle of intermittently supplying the silane-based gas, the hydrocarbon gas, and the nitriding gas once or more. Accordingly, the thin film including boron, nitrogen, silicon, and carbon with a low-k dielectric constant, an improved wet-etching resistance, and a reduced leak current can be formed.

Abstract: A method includes depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions, controlling feeding of precursor vapor from a precursor source to a reaction chamber including the reactor containing the substrate with a first pulsing valve embedded into the precursor source, and conveying inactive gas to a precursor cartridge attached to the precursor source to raise pressure of the precursor cartridge and to ease subsequent flow of a mixture of precursor vapor and inactive gas towards the reaction chamber.

Abstract: The invention concerns the use of the ruthenium-containing precursor having the formula (Rn-chd)Ru(CO)3, wherein: (Rn-chd) represents a cyclohexadiene (chd) ligand substituted with n substituents R, any R being in any position on the chd ligand; n is an integer comprised between 1 and 8 (1?n?8) and represents the number of substituents on the chd ligand; R is selected from the group consisting of C1-C4 linear or branched alkyls, alkylamides, alkoxides, alkylsilylamides, amidinates, carbonyl and/or fluoroalkyl for R being located in any of the eight available position on the chd ligand, while R can also be oxygen O for substitution on the C positions in the chd cycle which are not involved in a double bond for the deposition of a Ru containing film on a substrate.

Abstract: A method of manufacturing or surface treating a wire wrapped screen for use in a wellbore improves the erosion resistance of the wire-wrapped screen. The wire-wrapped screen can be disposed on an axle positioned in a chamber containing a source of erosion resistant surface coating. The coating is then deposited on the exterior of the wire-wrapped screen using a deposition process, such as physical vapor deposition or thermal spraying. Alternatively, a spray system proximate the wire-wrapped screen can have a deposition nozzle to coat the exterior surface of the screen with an elastomer coating by spraying an elastomer. In additional embodiments, the wire for the wire-wrapped screen can first be treated for erosion resistance and then wound about a mandrel to form the wire-wrapped screen.

Abstract: A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): wherein M is a metal selected from Groups 3 through 12 of the Periodic Table; R1 and R2 are each independently H or C1-C6 alkyl; and R3 is H or C1-C8. alkyl.

Abstract: A method for manufacturing a silicon-containing film includes the steps of loading a substrate, depositing a silicon-containing unloading the substrate, dry cleaning, reducing fluoride and exhausting gas. In the step of reducing fluoride, a reducing gas is supplied into a chamber in such a way that a partial pressure of CF4 gas in the chamber is A×(2.0×10?4) Pa or less at the end of the step of exhausting gas.

Abstract: An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions.

Abstract: Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.

Abstract: For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

Abstract: The invention provides an evaporation apparatus, which is able to improve an efficiency of evaporation materials, uniformity of deposited films, and throughput of the evaporation process. Disclosed is an evaporation source holder, which is installed in an evaporation chamber and configured to hold an evaporation material, and a moving mechanism, which is configured to move the evaporation source holder during evaporation of the evaporation material. The evaporation apparatus is further characterized by a shutter over the evaporation source holder, a filter over the shutter, and a heater surrounding the filter.

Abstract: A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.

Abstract: Methods and precursors are provided for deposition of elemental manganese films on surfaces using metal coordination complexes comprising an eta-3-bound monoanionic four-electron donor ligands selected from amidinate, mixed ene-amido and allyl, or eta-2 bound amidinate ligand. The ligands are selected from amidinate, ene-amido, and allyl.

Abstract: The present invention provides a method for manufacturing a bowl-shaped structure, a bowl-shaped structure manufactured thereby, and a bowl array using the bowl-shaped structure, wherein the method for manufacturing the bowl-shaped structure comprises the following steps: putting into contact a first substrate, on which a particle alignment layer is formed, and a second substrate so as to transfer the particle alignment layer to the second substrate; forming a particle-thin film complex by coating the particle alignment layer that is transferred on the second substrate with a thin film formation substance; removing a portion of the thin film formation substance from the complex to expose particles, and then removing the exposed particles to form a template having a hole; and forming the bowl-shaped structure by coating a first substance on the surface of the hole of the template and then removing the template.

Abstract: A laminate body of the present invention includes a base material, an atomic layer deposition film that is formed along the outer surface of the base material, and an overcoat layer that covers the atomic layer deposition film with a film having a mechanical strength higher than that of the atomic layer deposition film.

Abstract: A laminate body includes a base material, a film-like or a membrane-like undercoat layer that is formed in at least a portion of the outer surface of the base material, and an atomic layer deposition film that is formed on a surface opposite to a surface coming into contact with the base material among both surfaces of the undercoat layer in the thickness direction thereof. At least a portion of precursors of the atomic layer deposition film bind to the undercoat layer, and the atomic layer deposition film is formed into a membrane shape covering the undercoat layer.

Abstract: A method for making a film of core-shell nanoparticles generally uniformly arranged on a substrate uses atomic layer deposition (ALD) to form the shells. The nanoparticle cores are placed in a solution containing a polymer having an end group for attachment to the cores. The solution is then applied to a substrate and allowed to dry, resulting in the nanoparticle cores being uniformly arranged by the attached polymer chains. ALD is then used to grow the shell material on the cores, using two precursors for the shell material that are non-reactive with the polymer. The polymer chains also form between the cores and the substrate surface, so the ALD forms shell material completely surrounding the cores. The uniformly arranged core-shell nanoparticles can be used as an etch mask to etch the substrate.

Abstract: An interlayer configured for a composite substrate surface, the interlayer having a higher concentration of at least one first chemical element at the interface of the substrate surface and the innermost interlayer surface and a higher concentration of at least one second chemical element at the outermost interlayer surface is disclosed. Methods of forming the interlayer and providing functional properties to said composites are disclosed.

Abstract: A method for synthesizing a thin film, the method containing the steps of: (a) providing a substrate support assembly containing at least two selectively interdigitable substrate support fixtures; (b) loading a substrate for thin film synthesis onto said at least two fixtures; (c) interdigitating said at least two fixtures; (d) positioning said at least two fixtures in a reaction chamber and forming a thin film on a surface of the substrate; and (e) unloading the substrate from said at least two fixtures.

Abstract: A process for treating a non-ferrous metal component, comprising placing the component into a process chamber at an elevated temperature, biasing the component to have a potential capable of attracting ions, introducing oxygen into the chamber at a pressure such that a glow discharge comprising oxygen ions is generated, the process chamber additionally comprising a glow discharge ionization enhancing means, and activating the glow discharge ionization enhancing means thereby increasing charged species density of the glow discharge, the oxygen ions flowing towards the component and colliding the surface thereof at least some of which diffuse into the component.

Abstract: The present invention pertains to the double complex salts in optoelectronic components, like organic diodes, organic transistors or organic lasers, in particular an organic solar cell (OSC, OPP) and in particular from oligomers built from charged metal complexes.

Abstract: A method of treating a surface of at least one part by individual sources of an electron cyclotron resonance plasma is characterized by subjecting the part(s) to at least one movement of revolution with regard to at least one fixed linear row of elementary sources. The linear row or rows of elementary sources are disposed parallel to the axis or axes of revolution of the part or parts.

Abstract: A PG-coated product is produced by: producing a body by using PBN; providing a traceability display made of purified graphite in an arbitrary section of the body surface; and covering the body surface including the traceability display with a PG film. By setting the thickness of the PG film to 100 ?m or less, preferably 80 ?m or less, it is possible to provide transparency sufficient for reading the product serial number displayed on the body surface. Thus, this is a suitable way of displaying traceability. Because graphite does not adversely affect the physical properties of PBN and PG, the functions and durability intrinsic to the product are not impaired, even when the traceability display, which is formed by using graphite, is placed between the body surface made of PBN and the PG film.

Abstract: Techniques, processes and structures are disclosed for providing markings on products, such as electronic devices. For example, the markings can be formed using physical vapor deposition (PVD) processes to deposit a layer of material. The markings or labels may be textual and/or graphic. The markings are deposited on a compliant layer that is disposed on a surface to be marked. The compliant layer is arranged to isolate the surface to be marked from the layer of material deposited using the PVD process.

Abstract: Provided is a method for producing a substrate with a metal body. This method provides excellent film-forming properties (reflectance and adhesion), is easy to be used on a large substrate, and can be carried out at a low cost. The method includes the steps of: (A) heating a complex to a first temperature so as to generate a vapor of the complex; and (B) contacting the vapor with a substrate heated to a second temperature that is not higher than the first temperature so as to form a metal body containing a central metal of the complex, either in uncombined form or as a compound thereof (exclusive of the complex), on at least part of a surface of the substrate. The second temperature in step (B) is lower than the decomposition temperature of the complex. The central metal of the complex is aluminum or titanium.

Abstract: A method and apparatus to evenly distribute gas over a wafer in batch processing. Several techniques are disclosed, such as, but not limited to, angling an injector to distribute gas towards a proximate edge of the wafer, and/or reducing the amount of overlap in the center of the wafer of gas from subsequent gas injections.

Abstract: The present invention refers to a method for preparing a superhydrophobic surface on a solid substrate comprising the steps of (a) providing a solvent in the form of a pressurized fluid in a vessel, wherein the fluid exhibits a decrease in solvency power with decreasing pressure; (b) adding a hydrophobic substance to the solvent as a solute, which substance is soluble with the pressurized fluid and has the ability to crystallize/precipitate after expansion of the fluid, thereby obtaining a solution of the solvent and the solute in the vessel; (c) having at least one orifice opened on the vessel, thereby causing the pressurized solution to flow out of the vessel and depressurize in ambient air or in an expansion chamber having a lower pressure than within the vessel, the solute thereby forming particles; and (d) depositing the particles on the substrate in order to obtain a superhydrophobic surface.

Abstract: A method of forming a corrosion-resistant vibratory flowmeter is provided. The method comprises constructing a flowmeter assembly including one or more flow tubes configured to be vibrated, with the method being characterized by coating at least a portion of the flowmeter assembly with a diffusion coating, with the diffusion coating being diffused into and comprising a part of the flowmeter assembly.

Abstract: Provided are atomic layer deposition apparatus and methods including a plurality of elongate gas ports and pump ports in communication with multiple conduits to transport the gases from the processing chamber to be condensed, stored and/or recirculated.

Abstract: This disclosure relates to terpene solutions of metal precursors used for chemical vapor deposition, atomic layer deposition, spray pyrolysis or misted deposition. The terpenes do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. In spray pyrolysis or misted deposition, small droplets provide uniform coating. Terpenes have high flash points and low flammability, reducing the risk of fires. Terpenes have low toxicity and are biodegradable. They are available in large amounts from renewable, natural plant sources, and are low in cost.

Abstract: A method for inhibiting diffusion of gases and/or transmission of photons through elastomeric seals and a diffusion inhibiting elastomeric seal wherein at least a portion of the surface of a diffusion inhibiting elastomeric seal is coated with a compatibly-deformable, malleable metal coating.

Abstract: Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: Solution-based precursors for use as starting materials in film deposition processes, such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition. The solution-based precursors allow for the use of otherwise solid precursors that would be unsuitable for vapor phase deposition processes because of their tendency to decompose and solidify during vaporization.

Abstract: In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones.

Abstract: Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H2) to a filament disposed in a process chamber of the HWCVD tool for a first period of time; and flowing current through the filament to raise the temperature of the filament to a first temperature after the first period of time.

Abstract: Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 ? as measured on a silicon substrate.

Abstract: Substantially aligned boron nitride nano-element arrays prepared by contacting a carbon nano-element array with a source of boron and nitrogen; methods for preparing such arrays and methods for their use including use as a heat sink or as a thermally conductivity interface in microelectronic devices.

Abstract: A method and apparatus for placing sublimation images on cases of electronic devices prints a plurality of separate sublimation images on a sheet of transfer paper at predetermined locations. The periphery of the images is cut but leaves each image attached to the sheet at least at three locations. A corresponding plurality of cases is placed on fixtures in a tray at locations corresponding to the images. The sheet is placed over the tray, aligning each image with a case, after which heat and pressure cause the images to transfer to the cases by sublimation transfer.

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Abstract: A method for in-situ monitoring of gas-phase photoactive organic molecules in real time while depositing a film of the photoactive organic molecules on a substrate in a processing chamber for depositing the film includes irradiating the gas-phase photoactive organic molecules in the processing chamber with a radiation from a radiation source in-situ while depositing the film of the one or more organic materials and measuring the intensity of the resulting photoluminescence emission from the organic material. One or more processing parameters associated with the deposition process can be determined from the photoluminescence intensity data in real time providing useful feedback on the deposition process.

Abstract: A scalable, high-throughput nanoimprint lithography priming tool includes a dual-reactant chemical vapor deposition reactor chamber, a mandrel configured to hold a plurality of hard disks at an inner diameter of the hard disks, and a transport mechanism to move the plurality of hard disks into and out of the chamber. The tool may also include a transfer tool to transfer the plurality of hard disks to additional chambers for processing.

Abstract: The present invention consists of an implantable structural element for in vivo delivery of bioactive active agents to a situs in a body. The implantable structural element may be configured as an implantable prosthesis, such as an endoluminal stent, cardiac valve, osteal implant or the like, which serves a dual function of being prosthetic and a carrier for a bioactive agent. Alternatively, the implantable structural element may simply be an implantable article that serves the single function of acting as a time-release carrier for the bioactive agent.

Abstract: The invention includes a plasma etch-resistant film for a substrate comprising a yttria material wherein at least a portion of the yttria material is in a crystal phase having a crystal lattice structure, wherein at least 50% of the yttria material is in a form of a monoclinic crystal system. The film may be treated by exposure to a fluorine gas plasma. Also included are plasma etch-resistant articles that include a substrate and a film, wherein the film comprises an yttria material and at least a portion of the yttria material is present in the film in a crystal phase having a crystal lattice structure and at least 50% of the yttria material is in a form of a monoclinic crystal system. Several methods are contemplated within the scope of the invention.

Abstract: A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.

Abstract: A method and apparatus for impregnating tobacco industry products with sensate constituents of botanicals by storing the tobacco industry products and the botanicals separately and applying heat and/or pressure to the apparatus to obtain a modified taste and aroma profile, are disclosed.

Abstract: A deposition mask 601 is used to form a thin film 3 in a prescribed pattern on a substrate 10 by deposition. Each of a plurality of improved openings 62A of the deposition mask 601 has a protruding opening portion 64, and is formed so that the opening amount at an end in a lateral direction is larger than that in a central portion in the lateral direction. In a deposition apparatus 50, the deposition mask 601 is held in a fixed relative positional relation with a deposition source 53 by a mask unit 55. In the case of forming the thin film 3 in a stripe pattern on the substrate 10 by the deposition apparatus 50, deposition particles are sequentially deposited on the substrate 10 while relatively moving the substrate 10 along a scanning direction with a gap H being provided between the substrate 10 and the deposition mask 601.

Abstract: A first substrate has a source material forming surface on which source materials for forming a polymerized film is formed in a predetermined pattern, and a second substrate has a film forming surface on which the polymerized film will be formed. Here, the first substrate and the second substrate are installed in a processing chamber such that the source material forming surface and the film forming surface face each other. Then, the first substrate is heated to a first temperature at which the source materials on the source material forming surface are evaporated and the second substrate is heated to a second temperature at which the source materials cause polymerization reaction on the film forming surface. Therefore, the polymerized film is formed on the film forming surface by reacting the source materials and evaporated from the first substrate on the film forming surface of the second substrate.

Abstract: Certain example embodiments of this invention relate to techniques for applying an overcoat (e.g., which may include an organic material) to a coated article having a layer stack already disposed thereon in order to reduce the potential for surface marring. An evacuative process may be used to deposit the mar reducing overcoat. The coated article including the mar-reducing overcoat has a contact angle greater than, and a surface friction less than, a contact angle and a surface friction of the single- or multi-layer stack supported by the substrate alone. Any marring due to cat-scratching or the like preferably would not be visible at 4× magnification following application of the mar reducing overcoat.

Abstract: A method of forming a film on a substrate includes depositing first and second evaporating source materials respective from first and second evaporating sources onto the substrate while moving the evaporating sources together with respect to the substrate, the first and second evaporating source materials being different from each other and positioned to provide a non-overlapping deposition region of the first evaporating source material, an overlapping deposition region of the first and second evaporating source materials and a non-overlapping deposition region of the second source material such that when the evaporating sources are moved, a film is formed to include a first layer that is a deposition of only the first evaporating source material, a second layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a third layer that is a deposition of only the second source material.

Abstract: The synthesis of nanostructures uses a catalyst that may be in the form of a thin film layer on a substrate. Precursor compounds are selected for low boiling point or already exist in gaseous form. Nanostructures are capable of synthesis with a masked substrate to form patterned nanostructure growth. The techniques further include forming metal nanoparticles with sizes <10 nm and with a narrow size distribution. Metallic nanoparticles have been shown to possess enhanced catalytic properties. The process may include plasma enhanced chemical vapor deposition to deposit Ni, Pt, and/or Au nanoparticles onto the surfaces of SiO2, SiC, and GaN nanowires. A nanostructure sample can be coated with metallic nanoparticles in approximately 5-7 minutes. The size of the nanoparticles can be controlled through appropriate control of temperature and pressure during the process. The coated nanowires have application as gas and aqueous sensors and hydrogen storage.