Abstract: A treatment process, an oxide-forming treatment composition, and a treated component are disclosed. The treatment process includes applying an oxide-forming treatment composition to a ceramic coating and heating the oxide-forming treatment composition to form an oxide within the ceramic coating. The oxide-forming treatment composition includes a solute and a corrosion inhibitor. The oxide-forming treatment composition is super-saturated with the corrosion inhibitor. The treated component includes a ceramic coating and one or both of a corrosion inhibitor and an oxide formed by an oxide-forming treatment composition having the corrosion inhibitor. The corrosion inhibitor and the oxide-forming treatment composition are within the ceramic coating.

Abstract: A method of forming a metal thin film can reduce leakage current while improving electric properties by improving step coverage of a device. The method of forming a metal thin film includes supplying a metal precursor including chlorine, purging byproducts produced after the supplying of the metal precursor by injecting a purge gas, supplying a reactant to allow the reactant and the metal precursor to react with each other to form a thin film layer, and purging the byproducts produced after the reaction by injecting a purge gas, wherein before the supplying of the metal precursor, the method further includes supplying a reactant to be adsorbed on a treated product.

Abstract: The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber (8) along with a carrier gas by means of a gas inlet element (3) in order to deposit a thin layer, in particular in the form of a polymer, on the surface (7?) of a substrate (7) which lies on a supporting surface (4?) of a susceptor, said supporting surface (4?) lying opposite the gas inlet element (3), at a distance therefrom. In order to allow the coating process to be carried out at substrate temperatures that only slightly exceed the temperature of the supporting surface of the susceptor, the gas inlet element (3) and/or the supporting surface (4?) are/is temperature-controlled in such a way that the temperature (TS) of the supporting surface (4?) is lower than the temperature (TG) of the gas inlet element (3).

Abstract: A film formation jig is configured to be used in a film formation process to a device constituted of members having heat-resistant temperatures different from each other, in which a film is formed on a film formation target member of the device having a heat-resistant temperature higher than a heat-resistant temperature of a non-film formation portion of the device. The film formation jig includes: a retaining member configured to retain the device, the retaining member having a part which is configured to come into contact with a surface of the film formation target member of the device and is shaped in accordance with the surface of the film formation target member; and a mask member configured to mask the non-film formation portion of the device. The retaining member and the mask member have projections disposed on parts configured to come into contact with the non-film formation portion of the device.

Abstract: In various exemplary embodiments, a system and related method for processing substrates is provided. In one embodiment, a substrate processing system is provided that includes a substrate load module, a plurality of facilities modules, a plurality of process chambers, a substrate transfer module, at least one transfer gate to provide a contamination barrier between various ones of adjacent modules, and at least one gas impermeable shell to provide a controlled atmosphere within the substrate processing system.

Abstract: A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of processing chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity. A deposition method is also disclosed.

Abstract: A method and apparatus for improving coating of a substrate.

Abstract: A method for manufacturing a pattern structure includes the steps of forming a lift-off material on a base by an inkjet technique, forming a functional film on the base and the lift-off material by atomic layer deposition, and removing the lift-off material by a lift-off technique so as to form a pattern on the base from the functional film.

Abstract: Disclosed is a method for prediction of a film material such as a raw material for organic EL. In the method, a film material having an evaporation rate (V(%)) represented by the formula below can be predicted based on the values of the constant (Ko) and the activation energy (Ea). V=(Ko/P)×e?Ea/kT wherein Ko represents a constant (%·Torr), P represents a pressure (Torr), Ea represents an activation energy (eV), k represents a Boltzmann constant, and T represents an absolute temperature.

Abstract: Methods are provided for vapor deposition coating of hydrophobic materials and applications thereof. The method for making a hydrophobic material includes providing a natural mineral, providing a silicone-based material, heating the silicone-based material to release vaporous molecules of the silicone-based material, and depositing the vaporous molecules of the silicone-based material to form a layer of the silicone-based material on surfaces of the natural mineral.

Abstract: The present invention relates to nanostructured material capable of storing hydrogen. The nanostructured material may be configured with a selected geometry to provide the capability to influence and increase the limiting or theoretical gravimetric storage level (GSL) of hydrogen for a given chemical composition.

Abstract: A method and apparatus for controlling a vapor deposition based coating process, including monitoring ultrafine particles, and adjusting at least one process parameter based on the monitoring. During at least one stage of the coating deposition process, at least one of the coating precursors includes a gas, a vapor, or an aerosol.

Abstract: A disclosed film deposition apparatus includes a turntable including a substrate receiving area; a first reaction gas supplier for supplying a first reaction gas to a surface of the turntable having the substrate receiving area; a second reaction gas supplier, arranged away from the first reaction gas supplier along a circumferential direction of the turntable, for supplying a second reaction gas to the surface; a separation area located along the circumferential direction between a first process area of the first reaction gas and a second process area of the second reaction gas; a separation gas supplier for supplying a first separation gas to both sides of the separation area; a first heating unit for heating the first separation gas to the separation gas supplier; an evacuation opening for evacuating the gases supplied to the turntable; and a driver for rotating the turntable in the circumferential direction.

Abstract: A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate.

Abstract: A method for treating a piece (1) made of a first porous material (8) with a second material (2) when this second material is in liquid state, said second material (2) being suitable for infiltration when a predetermined temperature range (DTi) and a predetermined field of infiltration pressure (Dpi), comprises the steps of: —providing a crucible (4) suitable for containing the piece (1) and the second material (2) and capable of withstanding the temperatures and pressures for the infiltration of the second material (2) in the piece (1); providing a cover (5) for the crucible (4) suitable for closing the crucible creating a chamber (6) inside the crucible; placing the piece (1) and the second material (2) in said crucible chamber (6), when this second material is not yet in liquid state; —subsequently closing the crucible (4) with the cover (5); —at a pressure (pa or pa1)—unsuitable for the infiltrations of the second material in the first porous material, raising the temperature of the piece (1) and the seco

Abstract: A vapor deposition particle injection device (30) includes a vapor deposition particle generating section (41), at least one nozzle stage made of an intermediate nozzle section (51), a vapor deposition particle emitting nozzle section (61), and heat exchangers (43, 63, 53). The vapor deposition particle emitting nozzle section (61) is controlled so as to be at a temperature lower than a temperature at which a vapor deposition material turns into gas. Meanwhile, the intermediate nozzle section (51) is controlled by the heat exchanger (53) so as to be at a temperature between a temperature of the vapor deposition particle generating section (41) and a temperature of the vapor deposition particle emitting nozzle section (61).

Abstract: Provided is an apparatus for manufacturing a light guiding plate. The apparatus for manufacturing a light guiding plate includes an unwinding unit unwinding a film formed of a flexible material and wound in a roll shape, a winding unit winding the film provided from the unwinding unit in a roll shape, a surface treatment unit disposed between the unwinding unit and the winding unit to treat a surface of the film transferred into the winding part into a hydrophobic surface, a pattern formation unit disposed between the surface treatment unit and the winding unit to form a micro lens pattern on the surface of the film of which the surface is treated, and a pattern curing unit disposed between the pattern formation unit and the winding unit to cure the pattern.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: Disclosed herein are an armature for fuel pumps and a manufacturing method thereof, in which a polymer coating film is formed on an armature core such that the armature has corrosion resistance to an alcohol fuel and to a highly corrosive fuel.

Abstract: A method for applying a hydrophilic coating on a substrate includes: providing a substrate (1), producing an atmospheric pressure plasma discharge in the presence of a gas, at least partially exposing the substrate to the atmospheric pressure plasma discharge. The method introduces a liquid aerosol (6) or a vapor of coating forming material into the atmospheric pressure plasma discharge, thereby forming a coating on the substrate. The coating forming material is a non-polymerizable acetate derivative, and is ethyl acetate in one embodiment.

Abstract: Embodiments of the present invention provide improved methods and apparatus suitable for use with hearing devices. A vapor deposition process can be used to make a retention structure having a shape profile corresponding to a tissue surface, such as a retention structure having a shape profile corresponding to one or more of an eardrum, the eardrum annulus, or a skin of the ear canal. The retention structure can be resilient and may comprise an anatomically accurate shape profile corresponding to a portion of the ear, such that the resilient retention structure provides mechanical stability for an output transducer assembly placed in the ear for an extended time. The output transducer may couple to the eardrum with direct mechanical coupling or acoustic coupling when retained in the ear canal with the retention structure.

Abstract: Apparatuses, and related methods, for processing a workpiece that include a particular barrier structure that can overlie and cover a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular movable member that can be positioned over and moved relative to a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular ceiling structure that can overlie a processing chamber. Nozzle devices, and related methods, that include a particular annular body. Nozzle devices, and related methods, that include a particular first, second, and third nozzle structure.

Abstract: A seed substrate is placed to face a formation substrate, and then a gas containing silicon is introduced and chemical vapor deposition is performed. There is no particular limitation on a kind of a material used for the formation substrate as long as the material can withstand the temperature at which the reduced pressure chemical vapor deposition is performed. A group of silicon whiskers which does not include a seed atom can be grown directly on and in contact with the formation substrate. Further, the substrate provided with the group of whiskers can be applied to a solar cell, a lithium ion secondary battery, and the like, by utilizing surface characteristics of the group of whiskers.

Abstract: The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.

Abstract: A vacuum apparatus (100) includes: a vacuum chamber (11); a heat source (12) disposed inside the vacuum chamber (11); a cooling device (20) that cools the heat source (12) by circulation of a cooling gas; a gas feed line (1) connected to the cooling device (20) and extending outside the vacuum chamber (11); a cooling gas feeder (14) that feeds the cooling gas to the cooling device (20) through the gas feed line (1) when the heat source (12) is to be cooled; and a vacuum pump (13) that evacuates the cooling device (20) when the heat source (12) is to be used.

Abstract: A thermoplastic composition is described that can be directly coated with a metal according to a metallization process with no intervening base coat formation process necessary. The thermoplastic composition includes a polyarylene sulfide and a filler having a selectively controlled average length and aspect ratio. Molded articles formed of the thermoplastic composition can have an ultra-smooth surface so as to directly accept a metallization coating.

Abstract: The present disclosure is related to an aluminum-containing precursor composition, especially a precursor composition which is vaporized to be used for vapor phase deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD).

Abstract: A method of preparing a surface for deposition of a thin film thereon, wherein the surface including a plurality of protrusions extending therefrom and having shadowed regions, includes locally treating at least one of the protrusions.

Abstract: Provided are a deposition method of patterning a thin film on a substrate using momentary Joule heating in a vacuum environment, and a method thereof. The deposition device forms a deposition target layer on one surface of a source substrate as a pattern to be deposited. A deposition target layer forming unit forms a deposition target layer on the one surface of the source substrate to cover the conductive layer. A chamber in a vacuum state receives the source substrate on which the conductive layer and the deposition target layer are formed and the target substrate. A target substrate is disposed in the chamber to face the source substrate. A power supply applies power to the conductive layer to heat-generate the conductive layer. A configuration of the deposition device is very simple, and it is easy to uniformly form a deposition thickness.

Abstract: Provided are methods of catalytic atomic layer deposition using pyridine-based catalysts. Certain methods comprising activating a reaction between at least two film precursors and certain other methods of catalytic deposition of SiO2, both of which comprise using a pyridine-based catalyst.

Abstract: Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising: providing a reaction chamber; providing a substrate in said reaction chamber; subjecting the substrate to a series of deposition cycles, wherein each deposition cycle includes the steps of: (a) during a first time interval, supplying a first reactant to the reaction chamber; (b) during a second time interval, supplying a second reactant to the reaction chamber; and (c) during a third time interval, supplying neither the first nor the second reactant to the reaction chamber; wherein a start of the second time interval lies within the first time interval, such that a pre-exposure interval exists between a start of the first time interval and the start of the second time interval, during which pre-exposure interval the first reactant is supplied to the reaction chamber while the second reactant is not.

Abstract: A chopper knife for an agricultural machine has a plate-shaped blade having a front region and a rear region. The blade is confined in transversal direction by longitudinal edges. The front region comprises at least one elongate cutting edge provided with a coating extending along a surface of the blade over a width perpendicular to a longitudinal edge. The width of the coating decreases in a direction from the front region towards the rear region of the blade.

Abstract: A method for coating a substrate with a coating having a controlled morphology is disclosed, the method comprising providing a substrate, depositing a nucleating layer on a surface of the substrate using an aerosol assisted deposition method and depositing at least one further layer by chemical vapour deposition. The nucleating layer and further layer preferably comprise tin oxide. The substrate is preferably glass. The method results in high transmittance and a low diffuse transmission across the visible and infrared region.

Abstract: This disclosure relates to phosphate coatings that inhibit corrosion of metals, specifically coatings comprising acidic phosphate and alkaline metal oxide/hydroxide components. In one particular embodiment, phosphate-based coating formulations that reduce or eliminate corrosion of steel and other metals are disclosed. In other embodiments, methods for coating steel surfaces with acidic phosphate and alkaline metal oxide/hydroxide components to reduce or eliminate corrosion of the metal surfaces are disclosed.

Abstract: Disclosed is a blade element of a turbomachine, in particular of a gas turbine, which comprises a fastening element (10) with which the blade element is arranged in a receptacle (11) of the turbomachine. In the region of the fastening element, the blade element has a core region (18) and an envelope region (19) which at least partially envelops the core region. The core region is formed from a blade base material which is more brittle than the envelope material of the envelope region, and the envelope region is formed by a coating. The envelope material is a blade base material which has been modified to achieve a higher ductility or is a pseudoelastic or superelastic material.

Abstract: A method to achieve a conformal ultrathin film of platinum or one of its alloys on a substrate that can be economically used as a heterogeneous catalyst, such as automotive polymer electrolyte membrane (PEM) fuel cell catalyst. The method includes using a hydrogen plasma in platinum atomic layer deposition along with tungsten as a substrate or anchoring adhesive layer to assist platinum nucleation and deposition.

Abstract: In a nickel film forming method, an initial Ni film is formed on a substrate by a chemical vapor deposition (CVD) process by using a nickel-containing compound having a molecular structure in which a ligand containing a nitrogen-carbon bond is included and nitrogen of the ligand coordinates with nickel as a film forming source material and at least one selected from ammonia, hydrazine, and derivatives thereof as a reduction gas. Further, a main Ni film is formed on the initial Ni film by CVD by using the nickel-containing compound as the film forming source material and hydrogen gas as the reduction gas.

Abstract: Substantially defect-free titanium aluminide components and methods are provided for manufacturing the same from articles formed by consolidation processes. The method includes providing an intermediate article comprised of a titanium aluminide alloy and formed by a consolidation process. The intermediate article is encapsulated with an aluminum-containing encapsulation layer. The intermediate article is compacted after the encapsulation step. A substantially defect-free titanium aluminide component comprises a compacted three-dimensional article comprised of titanium aluminide and formed by a consolidation process and an aluminum-containing encapsulation layer on at least one surface of the compacted three-dimensional article. The aluminum-containing encapsulation layer comprises an aluminide material, MCrAlY wherein M is cobalt, nickel, or a combination of cobalt and nickel, or TiAlCr.

Abstract: A gas dispersion shield and method for protecting the bottom surface of a gas deposition chamber, while injecting gas from a gas insertion channel into the chamber at a non-vertical angle. The gas dispersion shield includes a cylindrically shaped vertical sidewall, an annular flange extending horizontally and outwardly from the sidewall upper end, and a horizontal wall that extends inwardly from the sidewall lower end. The flange includes a top surface, a bottom surface, and a plurality of holes formed through the flange each extending in a non-vertical direction from the bottom surface to the top surface. The bottom surface includes an annular protrusion that fits at least partially into the gas insertion channel, to ensure the gas flows through the non-vertical holes instead of escaping around the flange.

Abstract: Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” refers to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.

Abstract: A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide. A resulting mixture of vapor and carrier gas containing no unvaporized material is provided. The mixture of vapor and carrier gas are remixed to achieve a uniform vapor/carrier gas composition, which is directed toward a surface of a substrate, such as a glass substrate, where the vapor is deposited as a uniform film.

Abstract: Fabrication of fibers using links of nanotubes including slicing a first nanotube rope from a nanotube forest. The method further includes wrapping the first nanotube rope in a first plurality of circuitous turns to create a first link. The method further includes slicing a second nanotube rope from the nanotube forest. The method further includes wrapping the second nanotube rope in a second plurality of circuitous turns to create a second link, wherein the second link is interconnected to the first link in a chain.

Abstract: Provided is a technique for electroless deposition (ELD) for forming metal conductive layer on an insulating substrate made of glass, polymer, etc. According to an aspect, an adhesive layer and a catalyst layer are formed on a substrate using a dry deposition method, such as are plasma deposition (APD) or sputtering, etc., and electroless deposition is performed thereon, thereby forming a metal thin, film. Therefore, it is possible to significantly simplify a complicated pretreatment process required for electroless depositions and increase adhesive strength of a deposited metal thin film.

Abstract: Ternary tungsten boride nitride (WBN) thin films and related methods of formation are provided. The films are have excellent thermal stability, tunable resistivity and good adhesion to oxides. Methods of forming the films can involve thermal atomic layer deposition (ALD) processes in which boron-containing, nitrogen-containing and tungsten-containing reactants are sequentially pulsed into a reaction chamber to deposit the WBN films. In some embodiments, the processes include multiple cycles of boron-containing, nitrogen-containing and tungsten-containing reactant pulses, with each cycle including multiple boron-containing pulses.

Abstract: Methods and apparatus for delivering process gases to a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a gas distribution conduit disposed in a processing volume of a process chamber above a substrate support to distribute a process gas to a processing surface of the substrate when disposed on the substrate support; and an actuator coupled to the gas distribution conduit to move the gas distribution conduit with respect to the substrate support. In some embodiments, a method of processing a substrate may include introducing a process gas to a process chamber through a gas distribution conduit disposed above a substrate having a processing surface; and moving the gas distribution conduit within the process chamber and with respect to the substrate to distribute the process gas across the processing surface of the substrate.

Abstract: Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.

Abstract: Systems and methods for ALD thin film deposition include a mechanism for removing excess non-chemisorbed precursors from the surface of a substrate in a translation-based process involving multiple separate precursor zones. Excess precursor removal mechanisms according to the present disclosure may introduce localized high temperature conditions, high energy conditions, or azeotropes of the excess precursor, to liberate the excess precursor before it reaches a separate precursor zone, thereby inhibiting CVD deposition from occurring without causing heat-induced degradation of the substrate.

Abstract: Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.

Abstract: Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet.

Abstract: A gas driven apparatus and method that can be useful for growing crystalline materials are provided. The gas driven rotation apparatus can include one or more rotatable substrate support members, each of which can be configured to support at least one substrate having a growth surface oriented in a downwardly facing position. The gas driven rotation apparatus can further include one or more drive gas channels adapted to direct the flow of a drive gas to rotate the substrate support member. One or more substrates can be positioned in the apparatus so that the growth surface of each substrate is downwardly oriented. A drive gas can flow through the drive gas channel to rotate the substrate. During rotation, reactant gases can be introduced to contact the downwardly facing growth surface, and epitaxial layers of a crystalline material can thereby be grown in a downward direction.