Coating By Vapor, Gas, Or Smoke Patents (Class 427/248.1)
  • Publication number: 20140255606
    Abstract: Described are cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.
    Type: Application
    Filed: March 6, 2014
    Publication date: September 11, 2014
    Inventors: David Thompson, Jeffrey W. Anthis, David Knapp, Benjamin Schmiege
  • Patent number: 8828856
    Abstract: Provided is a TFT substrate (10) on which vapor-deposited sections are to be formed by use of a vapor deposition device (50) which includes a vapor deposition source (85) having injection holes (86); and a vapor deposition mask (81) having opening (82) through which vapor deposition particles are deposited to form the vapor-deposited sections. The TFT substrate (10) includes pixels two-dimensionally arranged in a pixel region (AG); and wires (14) electrically connected to the respective pixels. The vapor-deposited sections (Q) are formed with gaps (X) therebetween, and the wires (14) having respective terminals that are disposed in the gaps (X).
    Type: Grant
    Filed: January 13, 2012
    Date of Patent: September 9, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Patent number: 8828505
    Abstract: The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: September 9, 2014
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney, Eugene Joseph Karwacki, Jr.
  • Patent number: 8828194
    Abstract: A layer system that can be annealed comprises a transparent substrate, preferably a glass substrate, and a first layer sequence which is applied directly to the substrate or to one or more bottom layers that are deposited onto the substrate. The layer sequence includes a substrate-proximal blocking layer, a selective layer and a substrate-distal blocking layer. Also provided is a method for producing a layer system that can be annealed and has a sufficient quality even under critical climatic conditions and/or undefined conditions of the substrate. During the heat treatment (annealing, bending), the color location of the layer system is maintained substantially stable and the color location can be widely varied at a low emissivity of the layer system. For this purpose, a first dielectric intermediate layer is interposed between the substrate-proximal blocking layer and the selective layer and is configured as a substoichiometric gradient layer.
    Type: Grant
    Filed: September 21, 2005
    Date of Patent: September 9, 2014
    Assignee: Von Ardenne Anlagentechnik GmbH
    Inventors: Joerg Fiukowski, Matthias List, Hans-Christian Hecht, Falk Milde
  • Patent number: 8828490
    Abstract: A vapor deposition apparatus, which is capable of performing a thin film deposition process and improving characteristics of a formed thin film, includes: a chamber having an exhaust opening; a stage disposed in the chamber, and comprising a mounting surface on which the substrate may be mounted; an injection unit having at least one injection opening for injecting a gas into the chamber in a direction parallel with a surface of the substrate, on which the thin film is to be formed; a guide member facing the substrate to provide a set or predetermined space between the substrate and the guide member; and a driving unit conveying the stage and the guide member.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: September 9, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sang-Joon Seo, Seung-Yong Song, Seung-Hun Kim, Jin-Kwang Kim
  • Patent number: 8828491
    Abstract: An architectural construct is a synthetic material that includes a matrix characterization of different crystals engineered to exhibit certain properties. An architectural construct can be fabricated by a process involving layer deposition, formation, exfoliation and spacing. In one aspect, purified methane can be dehydrogenated onto a substrate by applying heat through the substrate. Deposited carbon can form a plurality of layers of a matrix characterization of crystallized carbon through self-organization. The layers can be exfoliated and spaced to configure parallel orientation at a desired spacing and thickness using selected precursors and applying heat, pressure, or both. The desired architectural construct can further be stabilized and doped to exhibit desired properties.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: September 9, 2014
    Assignee: McAlister Technologies, LLC
    Inventor: Roy Edward McAlister
  • Patent number: 8821987
    Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber, a remote plasma source, and a showerhead. Inert gas ports within the showerhead assembly can be used to alter the concentration and energy of reactive radical or reactive neutral species generated by the remote plasma source in different regions of the showerhead. This allows the showerhead to be used to apply a surface treatment to different regions of the surface of a substrate. Varying parameters such as the remote plasma parameters, the inert gas flows, pressure, and the like allow different regions of the substrate to be treated in a combinatorial manner.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: September 2, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Sunil Shanker, Tony P. Chiang, Chi-I Lang, Sandip Niyogi
  • Patent number: 8821974
    Abstract: A liquid hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. A solvent, lower in surface tension than water and capable of dissolving the hydrophobizing agent, is supplied to the substrate in a pre-drying rinsing step. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized.
    Type: Grant
    Filed: August 18, 2011
    Date of Patent: September 2, 2014
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Masahiro Kimura, Tomonori Kojimaru, Tetsuya Emoto, Manabu Okutani, Masayuki Otsuji
  • Publication number: 20140242374
    Abstract: Various methods, apparatuses and devices relate to porous metal layers on a substrate which are three-dimensionally coated. In one embodiment, a porous metal layer is deposited over a substrate. The porous metal layer can be three-dimensionally coated with a coating material.
    Type: Application
    Filed: February 22, 2013
    Publication date: August 28, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Johann Strasser, Thomas Kunstmann, Manfred Frank, Werner Robl, Maximilian Krug, Simon Faiss, Matthias Mueller
  • Patent number: 8815332
    Abstract: An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
    Type: Grant
    Filed: August 9, 2012
    Date of Patent: August 26, 2014
    Assignee: Smoltek AB
    Inventors: Mohammad Shafiqul Kabir, Andrzej Brud
  • Patent number: 8814437
    Abstract: A method for producing a roller bearing cage (1) is provided, including the following steps: a base body (2) which is close to a net shape is produced by a stereolithography method or by a 3D-printing method, and the provided base body (2) is coated with a thin, nanocrystalline coating (3). A roller bearing cage, including a base body (2) and a nanocrystalline coating (3) fixed to the base body (2) produced by this method is also provided. This method is suitable for producing roller bearing cages in only small quantities in a small series.
    Type: Grant
    Filed: August 3, 2011
    Date of Patent: August 26, 2014
    Assignee: Schaeffler Tecnologies GmbH & Co. KG
    Inventor: Wolfgang Braun
  • Patent number: 8816450
    Abstract: A silicon structure of the present invention is provided with a silicon substrate (1) to become a base, and a plurality of fibrous projections (2) made of silicon dioxide and directly joined to a silicon-made surface (1a) of the silicon substrate (1). By arbitrarily constructing an area where these fibrous projections (2) are formed in a predetermined area, it is possible to render the area to have at least either hydrophilicity or water retentivity, so as to provide a silicon structure useful for a variety of devices.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: August 26, 2014
    Assignee: Panasonic Corporation
    Inventors: Masaya Nakatani, Hiroshi Ushio, Soichiro Hiraoka, Akiyoshi Oshima, Makoto Takahashi
  • Patent number: 8815342
    Abstract: The present invention relates to a process for forming on the surface of a metal part a protective coating containing aluminium and zirconium, in which process said part and a cement made of an aluminium alloy are brought into contact with a gas at a treatment temperature in a treatment vessel, the gas comprising a carrier gas and an activator, the activator reacting with the cement to form a gaseous aluminium halide that decomposes on the surface of the part, depositing metallic aluminium thereon, the activator containing a zirconium salt such as Z?O (¾ obtained from granules of a zirconium salt), disassociation reactions of said zirconium salt taking place within a disassociation temperature range with formation of a Zr metal coating on the surface of the part, the assembly comprising the part, the cement and the zirconium salt granules is progressively heated in the chamber from room temperature up to the treatment temperature, the process being characterized in that the treatment chamber is maintained at
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: August 26, 2014
    Assignee: SNECMA
    Inventors: Justine Menuey, Andre Hubert Louis Malie
  • Publication number: 20140235513
    Abstract: In one embodiment, a coating is provided that includes a deposition surface, and a coating on the deposition surface. The coating may include particles of a metal chalcogenide comprising a fullerene-like geometry, a tubular-like geometry or a combination of fullerene-like geometries and tubular-like geometries. The metal chalcogenide composition has a molecular formula of MX2.
    Type: Application
    Filed: February 14, 2014
    Publication date: August 21, 2014
    Applicant: Nanotech Industrial Solutions, Inc.
    Inventors: Eugene Kverel, Ronen Kreizman, George Diloyan, Alon Shapira
  • Publication number: 20140231251
    Abstract: An aspect of the present embodiment, there is provided a gas supply member includes a body, and a gas supply path penetrating into the body, the gas supply path including a first channel at an inlet side and a second channel connected to the first channel at an outlet side, the first channel having a first diameter and a diameter of the second channel being monotonically increased towards the outlet side from the first diameter to a second diameter, wherein an alumina film is provided on a first sidewall of the first channel, an yttrium-containing film is provided on a second sidewall of the second channel and a surface of the body at the outlet side.
    Type: Application
    Filed: February 14, 2014
    Publication date: August 21, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hisashi Hashiguchi, Makoto Saito, Hideo Eto
  • Patent number: 8808799
    Abstract: In one embodiment, the disclosure relates to providing a first gas stream carrying vaporized material and depositing the vaporized material onto a substrate by directing a plurality of gas streams containing the vaporized material to a substrate, forming an gas curtain around the streams to prevent its dissemination beyond a target print area, and allowing the vaporized material to condense on the target print area. In another embodiment, heat is used to regulate the flow of the material and the thickness of the deposited layer.
    Type: Grant
    Filed: May 1, 2010
    Date of Patent: August 19, 2014
    Assignee: Kateeva, Inc.
    Inventors: Conor F. Madigan, Alexander Sou-Kang Ko, Jianglong Chen
  • Patent number: 8808797
    Abstract: Methods of manufacturing a gas barrier plastic container include a method in which the inside of a vacuum chamber which houses a plastic container is exhausted to form a pre-set pressure, and while maintaining a state where electricity is supplied to a thermal catalyst arranged inside the vacuum chamber to generate heat above a pre-set temperature, a source gas is blown on the thermal catalyst to decompose the source gas and create chemical species, whereby a gas barrier thin film is formed by the chemical species reaching at least one of either the inner surface or the outer surface of the plastic container.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: August 19, 2014
    Assignee: Kirin Beer Kabushiki Kaisha
    Inventors: Akio Mishima, Masaki Nakaya, Akira Shirakura
  • Publication number: 20140227443
    Abstract: A gas lance unit configured for a reactive deposition process with a plurality of spaced apart crucibles, wherein spaces are provided between the crucibles, is described. The gas lance unit includes a gas guiding tube having one or more outlets for providing a gas for the reactive deposition process, and a condensate guiding element for guiding a condensate, particularly an aluminum condensate, to one or more positions above the spaces.
    Type: Application
    Filed: April 29, 2011
    Publication date: August 14, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Gerd Hoffmann, Alexander Wolff
  • Publication number: 20140227442
    Abstract: Provided is a thin film deposition device including a deposition-preventing unit and a method of removing deposits thereof. The method includes: separating a deposition-preventing unit including at least one deposition-preventing plate and a deformation unit coupled to an outer surface of the at feast one deposition-preventing plate from a chamber of the thin film deposition device; and removing a film formation layer from the deposition-preventing plate.
    Type: Application
    Filed: June 21, 2013
    Publication date: August 14, 2014
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Myung-Soo Huh, Sun-Ho Kim, Cheol-Rae Jo, Hyun-Woo Joo
  • Patent number: 8802183
    Abstract: The system of the present invention includes a conductive element, an electronic component, and a partial power source in the form of dissimilar materials. Upon contact with a conducting fluid, a voltage potential is created and the power source is completed, which activates the system. The electronic component controls the conductance between the dissimilar materials to produce a unique current signature. The system can also measure the conditions of the environment surrounding the system.
    Type: Grant
    Filed: July 11, 2011
    Date of Patent: August 12, 2014
    Assignee: Proteus Digital Health, Inc.
    Inventors: Jeremy Frank, Peter Bjeletich, Hooman Hafezi, Robert Azevedo, Robert Duck, Iliya Pesic, Benedict Costello, Eric Snyder
  • Patent number: 8802201
    Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: August 12, 2014
    Assignee: ASM America, Inc.
    Inventors: Petri Raisanen, Jung Sung-hoon, Verghese Mohith
  • Patent number: 8801950
    Abstract: A substrate processing chamber includes a lift actuator that moves a pedestal between a substrate loading position and a substrate processing position. An adjustable seal defines an expandable sealed volume between a bottom surface of the pedestal and a bottom surface of the substrate processing chamber and is moveable between the substrate loading position and the substrate processing position. When the pedestal is in the substrate processing position, the pedestal and the adjustable seal define a first inert volume and a first process volume. When the pedestal is in the substrate loading position, the pedestal and the adjustable seal define a second inert volume and a second process volume. The second inert volume is less than the first inert volume and the second process volume is greater than the first process volume.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: August 12, 2014
    Assignee: Novellus Systems, Inc.
    Inventor: James F. Lee
  • Publication number: 20140217677
    Abstract: Exemplary piston rings are disclosed, comprising a base portion formed of a metallic material, and an outer contact surface extending between opposing side faces of the piston ring. The piston ring may include a coating layer applied to the outer contact surface, with the coating layer including an inner layer and an outer layer. Exemplary methods of making a piston ring are also disclosed, comprising providing a base portion formed of a metallic material, applying an inner layer to an outer surface of the base portion, and applying an outer layer on top of the inner layer.
    Type: Application
    Filed: December 30, 2013
    Publication date: August 7, 2014
    Applicant: Mahle International GmbH
    Inventors: Thomas Smith, Jason Bieneman
  • Patent number: 8795770
    Abstract: A process for preparing mist, which includes micro/nano solids or liquids, and a process for forming new materials by mist gas discharge, and also an apparatus for forming new materials. The advantages are: as compared to common gases, mists exhibit broader selection range of elements and compounds and broader range of suitable temperature and pressure. Due to the presence of mist AI(m), in a sealed container, the concentration of A in unit volume of mist is far higher than the concentration of A in unit volume of gas. Under specific conditions, the physical/chemical reactions can be carried out more easily, and new materials can be formed with higher efficiency.
    Type: Grant
    Filed: September 15, 2009
    Date of Patent: August 5, 2014
    Assignee: Beijing Tough & Lubricating Institute
    Inventors: Yifei Zhang, Xinhui Zhang
  • Patent number: 8795772
    Abstract: Two methods of producing nano-pads of catalytic metal for growth of single walled carbon nanotubes (SWCNT) are disclosed. Both methods utilize a shadow mask technique, wherein the nano-pads are deposited from the catalytic metal source positioned under the angle toward the vertical walls of the opening, so that these walls serve as a shadow mask. In the first case, the vertical walls of the photo-resist around the opening are used as a shadow mask, while in the second case the opening is made in a thin layer of the dielectric layer serving as a shadow mask. Both methods produce the nano-pad areas sufficiently small for the growth of the SWCNT from the catalytic metal balls created after high temperature melting of the nano-pads.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: August 5, 2014
    Assignee: Nano-Electronic And Photonic Devices And Circuits, LLC
    Inventor: Alexander Kastalsky
  • Patent number: 8796142
    Abstract: A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N?(R, R?) (wherein, R and R? each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber; reacting the raw gas with the NH3 gas; forming a reduced compound having Ta—NH3 on a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.
    Type: Grant
    Filed: March 3, 2006
    Date of Patent: August 5, 2014
    Assignee: Ulvac, Inc.
    Inventors: Narishi Gonohe, Satoru Toyoda, Harunori Ushikawa, Tomoyasu Kondo, Kyuzo Nakamura
  • Patent number: 8795769
    Abstract: A method and apparatus for coating and baking and deposition of surfaces on glass substrate or flexible substrate, such as films and thin glass sheets or other similar work pieces as it transitions thru and between small gaps of aero-static or hydro-static porous media bearings and differentially pumped vacuum grooves, in a non-contact manner, in order to process within a vacuum environment. The process is also intended to incorporate simultaneous and immediately sequential ordering of various processes.
    Type: Grant
    Filed: August 2, 2006
    Date of Patent: August 5, 2014
    Assignee: New Way Machine Components, Inc.
    Inventor: Andrew J. Devitt
  • Patent number: 8795771
    Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.
    Type: Grant
    Filed: October 27, 2006
    Date of Patent: August 5, 2014
    Inventors: Sean T. Barry, Yamile A. M. Wasslen, Antti H. Rahtu
  • Publication number: 20140212534
    Abstract: An imprint lithography template includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. The porous material includes silicon and oxygen, and a ratio of Young's modulus (E) to relative density of the porous material with respect to fused silica (?porous/?fused silica) is at least about 10:1. A refractive index of the porous material is between about 1.4 and 1.5. The porous material may form an intermediate layer or a cap layer of an imprint lithography template. The template may include a pore seal layer between a porous layer and a cap layer, or a pore seal layer on top of a cap layer.
    Type: Application
    Filed: January 30, 2013
    Publication date: July 31, 2014
    Applicant: MOLECULAR IMPRINTS, INC.
    Inventors: Edward B. Fletcher, Frank Y. Xu, Weijun Liu, Fen Wan, Marlon Menezes, Kosta S. Selinidis
  • Patent number: 8790750
    Abstract: A thin film deposition apparatus that can be simply applied to manufacture a thin film on a large substrate on a mass scale and that improves manufacturing yield includes a deposition source; a first nozzle disposed at a side of the deposition source and including first slits arranged in a first direction; a second nozzle assembly disposed opposite to the deposition source and including strings arranged in the first direction; and a barrier wall assembly including barrier walls disposed between the first nozzle and the second nozzle assembly to partition a space between the first nozzle and the second nozzle assembly into a plurality of sub-deposition spaces. The second nozzle assembly is movable relative to the target along a plane parallel to a surface of the target, or the target is movable relative to the second nozzle along the plane.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: July 29, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jung-Min Lee, Choong-Ho Lee
  • Patent number: 8784936
    Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: July 22, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Chongying Xu, Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum
  • Patent number: 8784950
    Abstract: A method for forming a conformal film of aluminum oxide on a substrate having a patterned underlying layer by PEALD includes: adsorbing an Al precursor containing an Al—C bond and an Al—O—C or Al—N—C bond; providing an oxidizing gas and an inert gas; applying RF power to the reactant gas and the reaction-assisting gas to react the adsorbed precursor with the reactant gas on the surface, thereby forming a conformal film of aluminum oxide on the patterned underlying layer of the substrate, wherein the substrate is kept at a temperature of about 200° C. or lower.
    Type: Grant
    Filed: July 16, 2012
    Date of Patent: July 22, 2014
    Assignee: ASM IP Holding B.V.
    Inventors: Atsuki Fukazawa, Hideaki Fukuda
  • Publication number: 20140199522
    Abstract: Devices with nanosized particles deposited on shaped surface geometries include a substrate with an active material of nanosized particles deposited on a surface of the substrate. The active material has an edge formed at a position determined with a shaped geometry of the surface.
    Type: Application
    Filed: January 17, 2013
    Publication date: July 17, 2014
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventor: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
  • Publication number: 20140199484
    Abstract: The present disclosure is directed to a process for applying a waterborne coating composition in a spray booth and a system thereof. The disclosure is particularly directed a process for introducing water into incoming air for the spray booth to produce a conditioned spray booth having appropriate humidity levels. The process of this disclosure is particularly useful for applying waterborne coating composition having effect pigments in a low humidity and high temperature climate.
    Type: Application
    Filed: July 24, 2012
    Publication date: July 17, 2014
    Inventors: John Charles Larson, John R. Moore
  • Patent number: 8778445
    Abstract: Methods and systems for forming modified metal coatings on a gas turbine engine component (20). The gas turbine engine component (20) is placed inside a container (50) having a known volume, along with a source material (32) containing a secondary element. The container (50), gas turbine engine component (20), and the source material (32) inside the container are placed into an oxygen-depleted space (18) inside a reaction chamber (12). At least one temperature for the source material (32) is determined based upon the known volume of the container (50) and an amount of the source material (32). While in the oxygen-depleted space (18), the source material (32) is heated to the at least one temperature sufficient to release a vapor phase reactant (35) containing the secondary element.
    Type: Grant
    Filed: May 8, 2009
    Date of Patent: July 15, 2014
    Assignee: MT Coatings, LLC
    Inventor: David C. Fairbourn
  • Patent number: 8778464
    Abstract: The present invention provides a method for removing metal and/or metal oxide contamination from the interior of a vacuum coating reactor, the method comprising the steps of: a) performing an idle coating step by depositing a coating layer, wherein the coating layer comprises silicon; b) at least partly removing the deposited coating layer. The method according to the invention is particularly suitable for cleaning reactors in the context of solar cell manufacturing. The method is time saving and cost saving.
    Type: Grant
    Filed: November 2, 2010
    Date of Patent: July 15, 2014
    Assignee: Tel Solar AG
    Inventors: Paolo Losio, Oliver Kluth, Jiri Kalas
  • Patent number: 8778081
    Abstract: Systems and methods for depositing complex thin-film alloys on substrates are provided. In particular, systems and methods for the deposition of thin-film Cd1-xMxTe ternary alloys on substrates using a stacked-source sublimation system are provided, where M is a metal such as Mg, Zn, Mn, and Cu.
    Type: Grant
    Filed: January 3, 2013
    Date of Patent: July 15, 2014
    Assignee: Colorado State University Research Foundation
    Inventors: Walajabad S. Sampath, Pavel S. Kobyakov, Kevin E. Walters, Davis R. Hemenway
  • Publication number: 20140193577
    Abstract: A pre-form CMC cavity and method of forming pre-form CMC cavity for a ceramic matrix component includes providing a mandrel, applying a base ply to the mandrel, laying-up at least one CMC ply on the base ply, removing the mandrel, and densifying the base ply and the at least one CMC ply. The remaining densified base ply and at least one CMC ply form a ceramic matrix component having a desired geometry and a cavity formed therein. Also provided is a method of forming a CMC component.
    Type: Application
    Filed: April 13, 2012
    Publication date: July 10, 2014
    Applicant: General Electric Company
    Inventors: Philip Harold MONAGHAN, John McConnell DELVAUX, Glenn Curtis TAXACHER
  • Publication number: 20140193266
    Abstract: Coupling apparatuses and methods of forming coupling apparatuses are provided herein. In an embodiment, a coupling apparatus includes a first component that includes a first metal substrate and a second component that includes a second metal substrate. The first metal substrate includes a titanium-based material. The second component is adapted to contact the first component in shear engagement. A protective coating is disposed on at least one of the first metal substrate or the second metal substrate. The protective coating consists of a first contact layer and, optionally, a diffusion barrier layer disposed between the first contact layer and the corresponding metal substrate. The first contact layer has a thickness of less than or equal to about 5 microns and includes material that is inert to titanium. The first contact layer has a contact surface that is adapted to directly contact an opposing surface in shear engagement.
    Type: Application
    Filed: January 9, 2013
    Publication date: July 10, 2014
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Krish Krishnamurthy, Robert Keiser
  • Publication number: 20140193578
    Abstract: The present invention is a bubbler having a diptube inlet ending in a bubble size reducing outlet and at least one baffle disc positioned between the outlet of the diptube and the outlet of the bubbler to provide a narrow annular space between the baffle disc and the wall of the bubbler to prevent liquid droplets from entering the outlet to the bubbler. The bubble size reducing outlet is an elongated cylindrical porous metal frit situated in a sump of approximately the same dimensions. A metal frit is placed at the inlet of the outlet of the bubbler. The present invention is also a process of delivering a chemical precursor from a bubbler vessel having the above structure.
    Type: Application
    Filed: March 12, 2014
    Publication date: July 10, 2014
    Inventors: Charles Michael Birtcher, Thomas Andrew Steidl, Xinjian Lei
  • Patent number: 8770143
    Abstract: The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: July 8, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Rick Endo, Kurt Weiner, Indranil De, James Tsung, Maosheng Zhao
  • Patent number: 8765221
    Abstract: A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: July 1, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Hidenori Miyoshi, Hitoshi Itoh, Hiroshi Sato
  • Patent number: 8765216
    Abstract: Process for manufacturing of an optical article which comprises: making available an organic substrate based on an organic polymer having a degree of water uptake of greater than or equal to 0.6% by weight, with respect to the total weight of the substrate, the degree of water uptake being equal to the weight of water absorbed by the material after drying and then storing for 800 hours in a chamber at 50° C. under a relative humidity of 100% and at atmospheric pressure; forming a hard abrasion-resistant coating on the substrate by heating the substrate at a temperature of greater than or equal to 90° C. for a period of time of at least 20 minutes; exposing the substrate covered with the hard abrasion-resistant coating to a humid atmosphere, so as to restore, to the organic substrate, the water evaporated during stage; and depositing of a water-impermeable inorganic coating by vacuum evaporation.
    Type: Grant
    Filed: June 7, 2012
    Date of Patent: July 1, 2014
    Assignee: Essilor International (Compagnie Generale d'Optique)
    Inventors: Pierre-Jean Calba, Joseph Martin, Karin Scherer, Alain Thuillier, Gérard Willemin
  • Publication number: 20140178700
    Abstract: The present invention relates to a functional film and a method for manufacturing the same, the functional film being organically and inorganically laminated to have a desired function such as high gas barrier performance and having high adhesiveness between inorganic and organic layers. The organic layer on top of the inorganic layer contains an organic solvent; an organic compound formed of the organic layer; and a silane coupling agent with a concentration between 0.1 and 25 percentages by mass excluding the organic solvent, the organic layer uses a coating material not containing a pH controller, and the organic layer is formed through curing via a heating process after coating.
    Type: Application
    Filed: January 17, 2014
    Publication date: June 26, 2014
    Applicant: FUJIFILM CORPORATION
    Inventors: Eijiro IWASE, Jiro TSUKAHARA
  • Publication number: 20140178583
    Abstract: Embodiments provided herein describe methods and systems for evaluating thermochromic material processing conditions. A plurality of site-isolated regions on at least one substrate are designated. A first thermochromic material is formed on a first of the plurality of site-isolated regions on the at least one substrate with a first set of processing conditions. A second thermochromic material is formed on a second of the plurality of site-isolated regions on the at least one substrate with a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.
    Type: Application
    Filed: December 20, 2012
    Publication date: June 26, 2014
    Applicant: INTERMOLECULAR, INC.
    Inventors: Jeroen Van Duren, Sang Lee, Sandeep Nijhawan
  • Publication number: 20140178568
    Abstract: An apparatus for passivating a coating of a flexible substrate includes a coating chamber for coating the flexible substrate, a chamber separation element, the chamber separation element being arranged for separating the coating chamber from a further chamber, a coating drum, the coating drum and the chamber separation element forming a gap, and a gas inlet, the gas inlet being arranged within the chamber separation element for supplying oxygen into the gap.
    Type: Application
    Filed: April 29, 2011
    Publication date: June 26, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Alexander Wolff, Gerd Hoffmann
  • Publication number: 20140167006
    Abstract: In a flexible substrate for roll-to-roll processing having improved thermal, mechanical, and chemical stabilities, a method of manufacturing the same, and an organic light emitting display apparatus including the same, the flexible substrate for roll-to-roll processing includes a base film formed of an organic material and an inorganic mesh pattern formed of inorganic material. The base film includes a first surface and a second surface opposite to the first surface, the first surface comprising first trenches extending in a first direction and second trenches extending in a second direction. The inorganic mesh pattern buries the first trenches and the second trenches.
    Type: Application
    Filed: September 24, 2013
    Publication date: June 19, 2014
    Inventor: Kihyun Kim
  • Publication number: 20140170315
    Abstract: A thin-film deposition apparatus includes a deposition source, which ejects deposition vapors toward a substrate via an ejection hole, and an angle restricting plate, which is arranged adjacent to the ejection hole so as to restrict, within a set range, an angle of ejecting the deposition vapors from the ejection hole. The angle restricting plate includes a fixed restricting plate, which is fixed with respect to the ejection hole, and a movable restricting plate, which is movable with respect to the ejection hole.
    Type: Application
    Filed: May 30, 2013
    Publication date: June 19, 2014
    Inventor: Seong-Jong KANG
  • Publication number: 20140170319
    Abstract: An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.
    Type: Application
    Filed: December 14, 2012
    Publication date: June 19, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Taiwan Semiconductor Manufacturing Company, Ltd.
  • Patent number: RE45124
    Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 9, 2014
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra