Abstract: A light emitting device (LED) employs one or more conductive multilayer reflector (CMR) structures. Each CMR is located between the light emitting region and a metal electrical contact region, thereby acting as low-loss, high-reflectivity region that masks the lossy metal contact regions away from the trapped waveguide modes. Improved optical light extraction via an upper surface is thereby achieved and a vertical conduction path is provided for current spreading in the device. In an example vertical, flip-chip type device, a CMR is employed between the metal bottom contact and the p-GaN flip chip layer. A complete light emitting module comprises the LED and encapsulant layers with a phosphor. Also provided is a method of manufacture of the LED and the module.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: A light emitting device includes a solid light-emitting element; a mounting substrate mounting the solid light-emitting element thereon; an encapsulating member encapsulating the solid light-emitting element; and a lead frame electrically connected to the solid light-emitting element through a wire. The lead frame is arranged on a rear surface of the mounting substrate, and the mounting substrate includes a front mounting surface on which the solid light-emitting element is mounted. The front mounting surface having a smooth surface region covered with the encapsulating member. The mounting substrate further includes a wire hole through which the wire extends from the front mounting surface of the mounting substrate to the rear surface thereof.

Abstract: A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.

Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming an supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing an first energy into the substrate; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of the first modified regions.

Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.

Abstract: A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an AlxGa1-xN (0<x<1) layer as a barrier layer. When the light-emitting layer is divided into three blocks including first, second and third blocks in the thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, the number of barrier layers are the same in the first and third blocks, and the Al composition ratio of each light-emitting layer is set to satisfy a relation x+z=2y and z<x where an average Al composition ratio of the barrier layers in the first block is represented as x, an average Al composition ratio of the barrier layers in the second block is represented as y, and an average Al composition ratio of the barrier layers in the third block is represented as z.

Abstract: A manufacturing method of a display device including a gate electrode film, a first electrode film, a second electrode film, and a conductive film connected to the first electrode film and formed of a conductive layer including a first conductive layer and a second conductive layer formed overlapping the first conductive layer. The method includes the steps of forming the first electrode film and the second electrode film, forming the conductive layer such that the conductive layer is connected to the first electrode film and the second electrode film, and forming the conductive film by removing regions other than predetermined regions of the conductive layer, wherein the conductive layer forming step includes the steps of forming the first conductive layer on the respective upper surfaces of the first electrode film and the second electrode film and forming the second conductive layer on the upper surface of the first conductive layer.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A method for manufacturing an optoelectronic device includes steps of: providing an optoelectronic structure; forming a first contact layer having a pattern on the upper surface of the optoelectronic structure; forming a dielectric layer on the first contact layer and the optoelectronic structure; removing the dielectric layer on the first contact layer; and forming an electrode structure on the first contact layer.

Abstract: It is an object to provide a light-emitting device which has high power efficiency and high light-extraction efficiency and emits light uniformly in a plane. It is another object to provide a manufacturing method of the light-emitting device. It is another object to provide a lighting device including the light-emitting device. One embodiment of the present invention provides a light-emitting device which includes: a first electrode provided over a substrate; a layer containing a light-emitting organic compound provided over the first electrode; an island-shaped insulating layer provided over the layer containing the light-emitting organic compound; an island-shaped auxiliary electrode layer provided over the island-shaped insulating layer; and a second electrode having a property of transmitting visible light provided over the layer containing the light-emitting organic compound and the island-shaped auxiliary electrode layer.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED toward a peripheral region of the LED.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.

Abstract: A semiconductor light emitting device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active layer on the second semiconductor layer; a third semiconductor layer on the active layer; and a fourth semiconductor layer on the third semiconductor layer, wherein the first semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN(0?X,Y?1), wherein the third semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN(0?X,Y?1), wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers having a material different from the quantum barrier layers, wherein the plurality of quantum well layers include an AlGaN based semiconductor layer, wherein the plurality of quantum barrier layers has a larger band gap energy than that of the quantum well layers.

Abstract: Provided is a method for manufacturing a semiconductor light emitting element, which has a step wherein a substrate composed of a material different from that of a semiconductor layer is used and a III compound semiconductor layer is formed on the substrate, and can reduce the emission wavelength distribution (?) of the obtained semiconductor light emitting layer. The method for manufacturing the semiconductor light emitting element having the III compound semiconductor layer is characterized in having: a compound semiconductor substrate forming step wherein at least one compound semiconductor layer is formed on the substrate and a compound semiconductor substrate having an amount of warpage (H) within the range of 50 ?m?H?250 ?m is formed; and a light emitting layer forming step wherein the light emitting layer composed of a plurality of III compound semiconductor layers is formed on the compound semiconductor substrate which has been formed.

Abstract: The present invention provides a light emitting device and a method for manufacturing a light emitting device. The light emitting device includes a base, an LED inversely mounted on the base. The LED includes an LED chip connected to the base and a buffer layer located on the LED. The buffer layer includes a plurality of depressions with complementary pyramid structure on a surface of the buffer layer not face the LED, the surface being a light-exiting surface of the LED. The buffer layer is made from silicon carbide. The light emitting device has a large area of the light-exiting surface and provides a reflecting film on a base, thus improving the luminous efficiency of the light emitting device. Inversely mounting mode is adopt, which is easy to implement.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, the wavelength converting layer formed around the chip, a transparent plate located on the wavelength converting layer and a diffusing reflection member disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate. The device can be configured to improve the linearity of a boundary between the diffusing reflection member and both side surfaces by using the transparent plate, and therefore can be used for a headlight that can form a favorable horizontal cut-off line corresponding to the boundary via a projector lens without a shade.

Abstract: A method of producing an optoelectronic component including providing an epitaxially grown layer sequence on a growth substrate, which comprises a suitable layer for light emission; applying a metal layer to the epitaxially grown layer sequence; applying a molding support to the metal layer, the molding support including a support material with a first coefficient of thermal expansion and a fiber mesh with a second coefficient of thermal expansion functionally bonded to the support material; and detaching the growth substrate.

Abstract: According to one embodiment, a light emitting element, includes: a semiconductor stacked body including a light emitting layer; a first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode; a transparent conductive layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer; and a current-blocking layer, at least one slit being provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer.

Abstract: A method for forming an electronic device such as a passive color OLED display. Bottom electrodes are patterned onto a substrate in rows. Raised posts formed by photoresist are patterned into columns oriented orthogonally to the bottom row electrodes. One or more organic layers, such as R, G, B organic emissive layers are patterned over the raised posts and bottom electrodes using organic vapor jet printing (OVJP). An upper electrode layer is applied over the entire device and forms electrically isolated columnar electrodes due to discontinuities in the upper electrode layer created by the raised columnar posts. This permits patterning of the upper electrodes over the organic layers without using photolithography. A device formed by this method is also described.

Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.

Abstract: A method is provided for forming a fine pattern. In the method, a first fine pattern and a first metal pattern are formed by respectively patterning a first fine pattern layer on a base substrate and a first metal layer on the first fine pattern layer. A second fine pattern layer and a second metal layer are sequentially formed over the first fine pattern and the first metal pattern. The second metal layer is patterned, so that a second metal pattern between adjacent portions of the first fine pattern. The second fine pattern layer is patterned using the second metal pattern as a mask, so that a second fine pattern is formed between adjacent portions of the first fine pattern.

Abstract: A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer.

Abstract: A method of packaging a light emitting diode comprising: providing a flexible substrate with a heat-conducting layer, an insulating layer covering on a surface of the heat-conducting layer and an electrically conductive layer positioned on the insulating layer; etching the conductive layer to form a gap in the conductive layer and expose a part of the insulating layer, the conductive layer being separated by the gap into a first electrode and a second electrode isolated from each other; stamping the flexible substrate with a mold at the position of the gap to form a recess in the flexible substrate; positioning a light emitting element on the conductive layer and electrically connecting the light emitting element to the conductive layer; and forming an encapsulation to cover the light emitting element.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes.

Abstract: An LED package includes a substrate, a transparent base, an LED chip and a reflective layer. The substrate has an upper surface. The transparent base is arranged on the upper surface of the substrate. The transparent base includes a first surface away from the substrate and a second surface opposite to the first surface. The LED chip is arranged on the first surface of the transparent base. The reflective layer is arranged between the substrate and the second surface of the transparent base.

Abstract: A method of making a LED includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A buffer layer is grown on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the buffer layer. A reflector and a first electrode are deposited on the second semiconductor layer in that order. The substrate and the buffer layer are removed. A second electrode is deposited on the first semiconductor layer.

Abstract: A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.

Abstract: A Group III nitride semiconductor device of the present invention is obtained by laminating at least a buffer layer (12) made of a Group III nitride compound on a substrate (11), wherein the buffer layer (12) is made of AlN, and a lattice constant of a-axis of the buffer layer (12) is smaller than a lattice constant of a-axis of AlN in a bulk state.

Abstract: A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer.

Abstract: A light-emitter including: a transparent first electrode; a charge injection transport layer; a light-emitting layer; and a transparent second electrode, layered in this order. The light-emitting layer is defined by a bank. The charge injection transport layer has a recessed structure including: an inner bottom surface in contact with a bottom surface of the light-emitting layer; and an inner side surface continuous with the inner bottom surface. The inner side surface includes: a lower edge continuous with the inner bottom surface; and an upper edge continuous with the lower edge. The upper edge is aligned with a bottom periphery of the bank, or has contact with a bottom surface of the bank. The charge injection transport layer has contact with a side surface of the light-emitting layer.

Abstract: A process for forming an electronic device can include fabricating an electronic device having a first workpiece including a first electronic component that includes a first organic layer. The process can also include repairing the electronic device after fabrication to provide electrical connections for initial non-functional electrical elements.

Abstract: A light-emitting thyristor includes a substrate, a first semiconductor multi-layered mirror of a first conductivity type that is formed on the substrate, a gate layer that is formed on the first semiconductor multi-layered mirror by stacking a plurality of semiconductor light-emitting layers having different peak values of an emission wavelength, and a second semiconductor multi-layered mirror of a second conductivity type that is formed on the gate layer.

Abstract: A light emitting apparatus includes a belt-like substrate, a light emitting element mounted on the substrate, and a luminous flux control member mounted on the substrate. The substrate has a pair of fracture surfaces formed at predetermined intervals along a lengthwise direction and formed at both ends in a widthwise direction between luminous flux control members neighboring each other along the lengthwise direction, wherein dimensions W1 and W2 in the widthwise direction between the pair of fracture surfaces are less than a dimension in the widthwise direction of the luminous flux control member, and the dimension W2 in the widthwise direction of a part overlapping the luminous flux control member in a plan view is less than the dimension W1 in the widthwise direction between the pair of fracture surfaces.

Abstract: A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.

Abstract: A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.

Abstract: A first device that may include one or more organic light emitting devices. At least 65 percent of the photons emitted by the organic light emitting devices are emitted from an organic phosphorescent emitting material. An outcoupling enhancer is optically coupled to each organic light emitting device. In one embodiment, the light panel is not attached to a heat management structure. In one embodiment, the light panel is capable of exhibiting less than a 10 degree C. rise in junction temperature when operated at a luminous emittance of 9,000 lm/m2 without the use of heat management structures, regardless of whether the light panel is actually attached to a heat management structure or not. The light panel may be attached to a heat management structure. The light panel may be not attached to a heat management structure.

Abstract: A semiconductor device and methods of manufacturing the same are disclosed. Specifically, methods and devices for manufacturing optocouplers are disclosed. Even more specifically, methods and devices that deposit one or more encapsulant materials on optocouplers are disclosed. The encapsulant material may include silicone and the devices used to deposit the silicone may be configured to simultaneously deposit the silicone on different sides of the optocoupler, thereby reducing manufacturing steps and time.

Abstract: A light-emitting diode module has a first component and a second component, wherein the module exhibits a first operating mode and a second operating mode. The first component exhibits a first luminous flux. The second component exhibits a second luminous flux. In the first operating mode, the ratio of the first and second luminous fluxes is set such that the module emits mixed radiation with a color rendering index of 80 to 97. In the second operating mode, the ratio of the first and second luminous fluxes is set such that the module emits mixed radiation with a color rendering index of 55 to 70.

Abstract: A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer.

Abstract: A light emitting diode includes a substrate, a carbon nanotube layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is adjacent to the substrate. The carbon nanotube layer is located between the first semiconductor layer and the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

Abstract: A light emitting chip includes a substrate, a heat conducting layer formed on the substrate, a protective layer formed on the heat conducting layer, a light emitting structure and a connecting layer connecting the protective layer with the light emitting structure. The heat conducting layer includes a plurality of horizontally grown carbon nanotube islands. The light emitting structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A first transparent conductive layer and a current conducting layer are sandwiched between the first semiconductor layer and the connecting layer. A second transparent conductive layer is formed on the second semiconductor layer.

Abstract: Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench cuts the light emitting portion of the device and a second trench cuts the substrate to which the light emitting portion is attached. The first trench can be less than 10 ?m. Hence, a semiconductor area that would normally be devoted to dicing streets on the wafer is substantially reduced thereby increasing the yield of devices. The devices generated by this method can also include base members that are electrically conducting as well as heat conducting in which the base member is directly bonded to the light emitting layers thereby providing improved heat conduction.

Abstract: Method for producing a structure comprising an active part comprising a first and a second suspended zone of different thicknesses from a first comprising substrate, said method comprising the following steps: a) machining the front face of the first substrate to define the lateral contours of at least one first suspended zone according to a first thickness less than that of the first substrate, b) forming a stop layer of etching of the first suspended zone under said suspended zone, to do this a prior step of removal of the semi-conductor material arranged under the first suspended zone takes place, c) forming on the front face of the first substrate a sacrificial layer, d) machining from the rear face of the first substrate up to releasing said sacrificial layer to form at least one second suspended zone to reach the stop layer of the first suspended zone, e) releasing the first and second suspended zones.

Abstract: In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts.

Abstract: Novel red and green fluorosulfide phosphors have a chemical formula of (A1-x-yCexBy)SF, wherein A and B are both trivalent metal ions, 0<x?0.1, and 0?y?1. A is a rare earth metal, B is a rare earth metal or a group 13 metal. A preparation method of the fluorosulfide and white-light emitting diode application thereof are also disclosed.

Abstract: A component emitting light radiation comprising a vertical junction supported on a substrate, the face of the substrate opposite the face on which the junction is made is provided with at least one first conducting zone dedicated to electrical contact and a second conducting zone insulated from the substrate and from the first conducting zone, the second zone being dedicated to heat dissipation.

Abstract: A light emitting diode includes a light emitting structure, a transparent conductive layer and a transparent protecting layer formed in sequence. A plurality of holes are defined in the transparent protecting layer to expose the transparent conductive layer out of the transparent protecting layer. A plurality of micro-structures are formed on a top surface of the transparent conductive layer in the holes. The micro-structures refract light emitted from the light emitting structure and travelling through the transparent conductive layer.

Abstract: A light emitting diode component, a light emitting diode package and the manufacturing method thereof are provided. The LED component includes a semiconductor epitaxial stack structure, a first electrode and a second electrode. The semiconductor epitaxial stack structure has a bottom surface, a top surface, a first lateral surface, and a second lateral surface. The first electrode is disposed on the first lateral surface. The second electrode is disposed on the bottom surface.

Abstract: A method for making light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is suspended above the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface in that order, wherein the first semiconductor layer includes a buffer layer, an intrinsic semiconductor layer, and a doped semiconductor layer stacked in that order. Fourth, the doped semiconductor layer is exposed by removing the substrate, the buffer layer, and the intrinsic semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer.