Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps. The method also includes growing a passivation oxide layer on a top of the polished first surface and depositing patterned metal contacts on a top of the passivation oxide layer. The method further includes applying a protecting layer on the patterned deposited metal contacts, etching a second surface of the semiconductor and applying a monolithic cathode electrode on the etched second surface of the semiconductor. The method additionally includes removing the protecting layer from the patterned metal contacts on the first surface, wherein the patterned metal contacts are formed from one of (i) reactive metals and (ii) stiff-rigid metals for producing inter-band energy-levels in the passivation oxide layer.

Abstract: A photoelectric conversion device comprising a photoelectric conversion part including a first electrode layer, a second electrode layer and a photoelectric conversion layer provided between the first electrode layer and the second electrode layer, wherein light is made incident from an upper part of the second electrode layer into the photoelectric conversion layer; the photoelectric conversion layer generates a charge containing an electron and a hole corresponding to the incident light from the upper part of the second electrode layer; and the first electrode layer works as an electrode for extracting the hole.

Abstract: A semiconductor device includes a substrate, a bonding pad provided above the substrate, a first signal transmitting/receiving portion provided above the substrate and below the bonding pad, and a transistor provided over the substrate. The transistor is connected to the first signal transmitting/receiving portion.

Abstract: An improved semiconductor apparatus that comprises an elongated structure that extends into the substrate. The apparatus comprises a collection contact, a resistive path, a bias connection that creates along the length of the elongated structure, an electric field component that drives signal charge carriers in a direction perpendicular to the elongated structure, and a second bias that generates a current flow that creates within the substrate a constant electric field component to drive signal charge carriers towards the collection contact on the first surface.

Abstract: A large area SDD detector having linear anodes surrounded by steering electrodes and having an oblong, circular, hexagonal, or rectangular shape. The detectors feature stop rings having a junction on the irradiation side and an ohmic contact on the anode side and/or irradiation side. The irradiation and anode stop ring biasing configuration influences the leakage current flowing to the anode and, hence, the overall efficiency of the active area of the detector. A gettering process is also described for creation of the disclosed SDD detectors. The SDD detector may utilize a segmented configuration having multiple anode segments and kick electrodes for reduction of the detector's surface electric field. In another embodiment, a number of strip-like anodes are linked together to form an interdigitated SDD detector for use with neutron detection. Further described is a wraparound structure for use with Ge detectors to minimize capacitance.

Abstract: Exemplary embodiments of the invention include a thermoelectric material having an aligned polarization field along a central axis of the material. Along the axis are a first atomic plane and a second atomic plane of substantially similar area. The planes define a first volume and form a single anisotropic crystal. The first volume has a first outer surface and a second outer surface opposite the first outer surface, with the outer surfaces defining the central axis passing through a bulk. The bulk polarization field is formed from a first electrical sheet charge and a second opposing electrical sheet charge, one on each atomic plane. The opposing sheet charges define a bulk polarization field aligned with the central axis, and the bulk polarization field causes asymmetric thermal and electrical conductivity through the first volume along the central axis.

Abstract: Detector modules and methods of manufacturing are provided. One detector module includes a detector having a silicon wafer structure formed from a first layer having a first resistivity and a second layer having a second resistivity, wherein the first resistivity is greater than the second resistivity. The detector further includes a photosensor device provided with the first layer on a first side of the silicon wafer and one or more readout electronics provided with the second layer on a second side of the silicon wafer, with the first side being a different side than the second side.

Abstract: A chalcogenide glass radiation sensor comprising a chalcogenide glass layer coupled to at least two electrodes and a metal source, and a method using the same are disclosed. The chalcogenide glass layer has a resistivity and the at least two electrodes are configured to facilitate the measurement of the resistivity of the chalcogenide glass layer. The coupling of the metal source and the chalcogenide glass layer is such that the resistivity of the chalcogenide glass layer changes upon exposure to ionizing radiation. The metal source is configured to be external to an electric field that may form between the at least two electrodes as the resistivity of the chalcogenide glass layer is measured.

Abstract: A device, and method for manufacturing the same, including a semiconductor package which allows transmission therethrough of a radio signal, a chip which generates the radio signal and a coupler adjacent the chip and effective to radiate the radio signal to outside of the semiconductor package.

Abstract: The present invention provides a solid-state imaging device comprising: a semiconductor substrate having a pixel region and a peripheral circuit region; a multilayer wiring layer including layers of wiring and an interlayer film interposed therebetween, and disposed above the semiconductor substrate to cover the pixel region and the peripheral circuit region except areas above the photoelectric conversion elements; a waveguide member filling the areas above the photoelectric conversion elements (waveguides) and covering the multilayer wiring layer at least within the pixel region; and an optical structure (composed of a color filter material and a lens material) disposed above the waveguide member within the pixel region, wherein a groove is formed by removing a portion of the waveguide member from an area within the pixel region that is in a border between the pixel region and the peripheral circuit region.

Abstract: The present invention generally relates to a thermal processing apparatus and method that permits a user to index one or more preselected light sources capable of emitting one or more wavelengths to a collimator. Multiple light sources may permit a single apparatus to have the capability of emitting multiple, preselected wavelengths. The multiple light sources permit the user to utilize multiple wavelengths simultaneously to approximate “white light”. One or more of a frequency, intensity, and time of exposure may be selected for the wavelength to be emitted. Thus, the capabilities of the apparatus and method are flexible to meet the needs of the user.

Abstract: An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.

Abstract: An electro-optical device 10 comprises a body 12 of a semiconductor material, such as silicon. A light source 14 is formed integrally in the body. The device comprises an associated light detector 16 and an optical path providing part 19 having a refractive index and extending between the light source 14 and the detector 16, to provide an optical path 18 having a path length. A sensor 20 cooperates with the optical path providing part 19 and is configured to modulate light emitted by the light source 14, by changing at least one of light absorption characteristics in the optical path by exposing a medium in the optical path to the emitted light, the path length and the refractive index.

Abstract: A scintillator element (114) comprising uncured scintillator material (112) is formed and optically cured to generate a cured scintillator element (122, 122?). The uncured scintillator material suitably combines at least a scintillator material powder and an uncured polymeric host. In a reel to reel process, a flexible array of optical detectors is transferred from a source reel (100) to a take-up reel (106) and the uncured scintillator material (112) is disposed on the flexible array and optically cured during said transfer. Such detector layers (31, 32, 33, 34, 35) are stackable to define a multi-layer computed tomography (CT) detector array (20). Detector element channels (50, 50?, 50?) include a preamplifier (52) and switching circuitry (54, 54?, 54?) having a first mode connecting the preamplifier with at least first detector array layers (31, 32) and a second mode connecting the preamplifier with at least second detector array layers (33, 34, 35).

Abstract: A detector element is disclosed with a semi-conductive converter element and metal contacts arranged thereon for at least one anode and at least one cathode, wherein at least one of the metal contacts comprises a contact layer made from a contact material based on precious metal and ruthenium as its mixed component. Moreover, an embodiment of the invention concerns a radiation detector with the detector element with a ruthenium-containing contact layer and, optionally, with an evaluation unit to read out a detector signal, as well as a medical device with the radiation detector. Furthermore, a method for the production of a detector element is described which includes the installation step of a contact material of at least one of the metal contacts on the converter element, wherein the contact material includes a precious metal base with ruthenium as its mixed component.

Abstract: A radiation detector comprising a metal-carbon junction wherein a layer of carbon (11) is deposited on a layer of metal (12) having a work function higher than the work function of carbon (11), the junction having electrical characteristic of a diode.

Abstract: The present invention relates to a method for designing an electrically small antenna, in one embodiment, within an enclosing volume. In a preferred embodiment, the method comprises the steps of designing the electrically small antenna which has a general cross-sectional contour shape of an oblate spheroid from a top load portion to a stem portion below the top load portion. The oblate spheroid contour shape is represented by an antenna dipole moment algorithm which includes a dipole moment term. The method further comprises the steps of controlling the amplitude of the dipole moment term, including adjusting the amplitude of the dipole moment term to independently change the oblate spheroid contour shape, resulting in a change to the electric field outside the enclosing volume and a change to the electric field inside the enclosing volume.

Abstract: A reflecting film including: an Ag or Ag-base alloy thin film of an Ag-base alloy containing at least one element among Au, Pt, Pd, Bi, and rare-earth elements as a first layer; a film of an oxide or oxynitride of at least one element among Si, Al and Ti having a thickness between 5 and 50 nm as a second layer deposited on the first layer; and a film having a thickness between 10 and 100 nm formed by a plasma polymerization process as a third layer deposited on the second layer.

Abstract: An antenna is provided. This antenna is contained within a package that is secured to an IC (which allows radiation to propagated away for a printed circuit board so as to reduce interference), and this antenna includes two loop antennas that are shorted to ground and that “overlap” and includes a “via wall.” With this configuration, circular polarization can be achieved by varying the relative phases of the input signals, and the “via wall” improves efficiency by reducing surface waves.

Abstract: A method is disclosed that includes providing a semiconductor substrate having one or more device levels including a number of devices, and forming a number of wiring levels on a top surface of the one or more device levels, wherein one or more of the number of wiring levels includes one or more alpha particle blocking shields situated between at least one of the number of devices and a predetermined first location where a terminal pad will be formed in one of the wiring levels, the one or more alpha particle blocking shields placed at a second location, having one or more widths, and occupying a predetermined number of the wiring levels, sufficient to prevent a predetermined percentage of alpha particles of a selected energy or less expected to be emitted from an alpha particle emitting metallization to be formed adjacent and connected to the terminal pad from reaching the one device.

Abstract: A method for forming a semiconductor device includes forming an implant mask on a substrate, such that a first portion of the substrate is located under the implant mask, and a second portion of the substrate is exposed; performing oxygen ion implantation of the substrate; removing the implant mask; and forming a first field effect transistor (FET) on the first portion of the substrate, and forming a second FET on the second portion of the substrate, wherein the second FET has a higher radiation sensitivity than the first FET.

Abstract: An array substrate for an LCD device includes a gate line crossing a data line to define a pixel region. A thin film transistor (TFT) includes a gate electrode connected to the gate line, insulating and active layers on the gate electrode, a source electrode connected to the data line, and a drain electrode spaced apart from the source electrode. An auxiliary common electrode includes a horizontal portion disposed in the pixel region. A metal layer overlaps the insulating layer and contacts the horizontal portion of the auxiliary common electrode through a contact hole defined through the insulating layer. A passivation layer is disposed on the TFT and the metal layer. A pixel electrode has a horizontal portion overlapping the metal layer with the passivation layer therebetween to form a storage capacitor, the pixel electrode connected to the drain electrode through a second contact hole defined through the passivation layer.

Abstract: There is provided a semiconductor package including: a substrate including a semiconductor chip mounted thereon; a protective layer covering the semiconductor chip; a metal pattern mounted on the protective layer; and a first connective member connecting the semiconductor chip and the metal pattern.

Abstract: Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 ?m Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.

Abstract: A photoelectric conversion device using a semiconductor fine material such as a semiconductor fine particle sensitized with a dye carried thereon, characterized in that the dye is a methine type dye having a specific partial structure, for example, a methine type dye having a specific carboxyl-substituted hetero ring on one side of a methine group and an aromatic residue substituted with a dialkylamino group or an organic metal complex residue on the other side of the methine group, or a methine type dye having a carboxyl-substituted aromatic ring on one side of a methine group and a heteroaromatic ring having a dialkylamino group or an organic metal complex residue on the otherside of the methine group; and a solar cell using the photoelectric conversion element. The photoelectric conversion element exhibits a conversion efficiency comparable or superior to that of a conventionally known photoelectric conversion element sensitized with a methine type dye.

Abstract: A photoelectric conversion device using a semiconductor fine material such as a semiconductor fine particle sensitized with a dye carried thereon, characterized in that the dye is a methine type dye having a specific partial structure, for example, a methine type dye having a specific carboxyl-substituted hetero ring on one side of a methine group and an aromatic residue substituted with a dialkylamino group or an organic metal complex residue on the other side of the methine group, or a methine type dye having a carboxyl-substituted aromatic ring on one side of a methine group and a heteroaromatic ring having a dialkylamino group or an organic metal complex residue on the other side of the methine group; and a solar cell using the photoelectric conversion element. The photoelectric conversion element exhibits a conversion efficiency comparable or superior to that of a conventionally known photoelectric conversion element sensitized with a methine type dye.

Abstract: A switching device including a first dielectric layer having a first top surface, two conductive features embedded in the first dielectric layer, each conductive feature having a second top surface that is substantially coplanar with the first top surface of the first dielectric layer, and a set of discrete islands of a low diffusion mobility metal between the two conductive features. The discrete islands of the low diffusion mobility metal may be either on the first top surface or embedded in the first dielectric layer. The electric conductivity across the two conductive features of the switching device increases when a prescribed voltage is applied to the two conductive features. A method of forming such a switching device is also provided.

Abstract: A semiconductor detector device, such as a PIN diode or silicon drift detector, including a substrate with an entrance window. The entrance window comprises a conductive layer, and an insulating layer disposed between the conductive layer and the substrate. The insulating layer and conductive layer cover a center portion of the surface of the substrate.

Abstract: In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.

Abstract: An integrated circuit module includes a carrier substrate, a semiconductor die disposed in the carrier substrate, a ground pad disposed on the carrier substrate, and an antenna partially embedded in the carrier substrate. The antenna includes a ground layer in thermal contact with the ground pad for dissipating heat generated from the semiconductor die.

Abstract: A nano power cell and method of use are described wherein the nano power cell absorbs electromagnetic energy is nano particles in an optical fluid that flow in microchannels of the nano power cell.

Abstract: A semiconductor device including a device substrate having a front side and a back side. The semiconductor device further includes an interconnect structure disposed on the front side of the device substrate, the interconnect structure having a n-number of metal layers. The semiconductor device also includes a bonding pad disposed on the back side of the device substrate, the bonding pad extending through the interconnect structure and directly contacting the nth metal layer of the n-number of metal layers.

Abstract: A package structure having MEMS elements includes: a wafer having MEMS elements, electrical contacts and second alignment keys; a plate disposed over the MEMS elements and packaged airtight; transparent bodies disposed over the second alignment keys via an adhesive; an encapsulant disposed on the wafer to encapsulate the plate, the electrical contacts and the transparent bodies; bonding wires embedded in the encapsulant and each having one end connecting a corresponding one of the electrical contacts and the other end exposed from a top surface of the encapsulant; and metal traces disposed on the encapsulant and electrically connected to the electrical contacts via the bonding wires. The present invention eliminates the need to form through holes in a silicon substrate as in the prior art so as to reduce fabrication costs. Further, the present invention accomplishes wiring processes by using a common alignment device to thereby reduce equipment costs.

Abstract: A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.

Abstract: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

Abstract: The present invention provides a semiconductor device capable of changing the setting of the internal operation mode without increasing the number of terminals of the semiconductor device. The semiconductor device 100a includes a transmitting cell, a receiving cell, a semiconductor chip 120 including a transmitting antenna 121a and a receiving antenna 122a, and a conductor 111a. The transmitting antenna 121a is connected to the transmitting cell, and the receiving antenna 122a is connected to the receiving cell. The conductor 111a is provided close to the transmitting antenna 121a and the receiving antenna 122a. Close proximity wireless communication is used between the transmitting cell and the receiving cell.

Abstract: A semiconductor package and a method of fabricating the same. The semiconductor package includes: a substrate having a plurality of semiconductor components disposed thereon; an encapsulant covering the substrate and the semiconductor components; and a metal layer formed on the exposed surfaces of the encapsulant, wherein the encapsulant is formed with a trench for dividing into a plurality of package units on the substrate to allow each of the package units to have at least one of the semiconductor components, and the metal layer is formed in the trench to encompass the encapsulant on the periphery of the semiconductor components, thereby preventing interference of electromagnetic waves between the semiconductor components.

Abstract: An integrated circuit includes an antenna, a die manufactured from a semiconducting material, an RF energy collection and processing means disposed on or within said die and including at least a receiver and a processing means, an input configured to supply power to said RF energy collection and processing means and an output for operative communication by said RF energy collection and processing means. The integrated circuit is configurable and operable to provide at least one of electromagnetic emission anomaly detection, tamper detection, anti-tamper monitoring, degradation monitoring, health monitoring, counterfeit detection, software changes monitoring, firmware changes monitoring and monitoring of other RF energy anomalies.

Abstract: A sensor assembly includes a sound sensor, an image sensor, an acceleration sensor, and a gyroscope sensor. The sound sensor includes a substrate defining a first cavity, a diaphragm positioned on the substrate and covering the first cavity, a back plate covering the diaphragm and positioned on the substrate, and a capacitance. A first electrode layer is coated on the diaphragm and faces the first cavity. A second cavity is defined between the diaphragm and the back plate. A second electrode layer is coated on the back plate and faces the second cavity. The capacitance is electrically connected between the first and second electrode layers. The image sensor, the acceleration sensor, and the gyroscope sensor are positioned on the substrate.

Abstract: Pixels are two-dimensionally arranged into rows and columns in an image sensing region of a solid-state image sensing device, and divided into a plurality of vertical blocks. A vertical signal line is connected to each pixel column. A voltage read out from a pixel is A/D-converted and held in a holding circuit. A vertical block selection circuit outputs a vertical block selection signal in response to a horizontal sync pulse. An intra-block line selection circuit selects one pixel row in one block or simultaneously selects a plurality of pixel rows in one block, in accordance with the selection signal and a signal for setting the number of lines to be selected. A pulse selector circuit supplies a pixel driving pulse signal to a pixel row selected by the intra-block line selection circuit.

Abstract: A communication device according to an embodiment includes an antenna transmitting/receiving a high frequency signal, a semiconductor chip having four corners and four sides processing the high frequency signal, and a substrate on which a first wiring connected to ground, a second wiring supplying power to the semiconductor chip, a third wiring connected to a protection element or circuit of the semiconductor chip, and fourth wirings transmitting a signal from the semiconductor chip are formed by plating, and the semiconductor chip is mounted.

Abstract: A chip package includes a plurality of layers including conductive planes connected by vias. The layers include a first portion having an antenna formed therein and a parallel-plate mode suppression mechanism to suppress parallel-plate mode excitation of the antenna. The parallel-plate mode suppression mechanism includes a reflector offset from an antenna ground plane and first grounded vias. A second portion has an interface for connecting to an integrated circuit device wherein the first portion and the second portion are separated by the parallel-plate mode suppression mechanism.

Abstract: Disclosed herein is a radiation detector including a photosensor and a capacitor. The radiation detector includes a plurality of photosensors having front and rear electrodes formed on front and rear surfaces thereof, an insulation layer formed on the rear surfaces of the photosensors, a plurality of data electrodes formed on the rear surface of the insulation layer, a plurality of signal electrodes formed on the front surfaces of the photosensors, and a capacitor formed including the rear electrode formed on the rear surface of the photosensor, the insulation layer formed on the rear surfaces of the rear electrodes, and the data electrodes formed on the rear surface of the insulation layer.

Abstract: A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.

Abstract: When letters are written with a ballpoint pen, pen pressure is greater than or equal to 10 MPa. The IC tag embedded in the paper base material is required to withstand such pen pressure. An integrated circuit including a functional circuit which transmits and receive, performs arithmetic of, and stores information is thinned, and also, when the integrated circuit and a structural body provided with an antenna or a wiring are attached, a second structural body formed of ceramics or the like is also attached to at the same time. When the second structural body formed of ceramics or the like is used, resistance to pressing pressure or bending stress applied externally can be realized. Further, a part of passive elements included in the integrated circuit can be transferred to the second structural body, which leads to reduction in area of the semiconductor device.

Abstract: Some embodiments herein relate to a transmitter. The transmitter includes an integrated circuit (IC) package including a first antenna configured to radiate a first electromagnetic signal therefrom. A printed circuit board (PCB) substrate includes a waveguide configured to receive the first electromagnetic signal and to generate a waveguide signal based thereon. A second antenna can be electrically coupled to the waveguide and can radiate a second electromagnetic signal that corresponds to the waveguide signal. Other devices and methods are also disclosed.

Abstract: According to example embodiments, a photodiode system may include a substrate, and at least one photodiode in the substrate, and a wideband gap material layer on a first surface of the substrate. The at least one photodiode may be between an insulating material in a horizontal plane. According to example embodiments, a back-side-illumination (BSI) CMOS image sensor and/or a solar cell may include a photodiode device. The photodiode device may include a substrate, at least one photodiode in the substrate, a wide bandgap material layer on a first surface of the substrate, and an anti-reflective layer (ARL) on the wide bandgap material layer.

Abstract: This document describes a wireless sensor comprising a MEMS resonator and an antenna directly matched thereto. Also a method of reading the wireless sensor is described. The method comprises illuminating the wireless sensor with electromagnetic energy at a first and second frequencies and receiving an intermodulation signal emitted by the wireless sensor in response to said electromagnetic energy at the first and second frequencies.

Abstract: Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.

Abstract: A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer.