Electrically Programmable (eprom), I.e., Floating Gate Memory Structures (epo) Patents (Class 257/E21.68)
- With source and drain on same level and without cell select transistor (EPO) (Class 257/E21.682)
- With source and drain on same level and with cell select transistor (EPO) (Class 257/E21.69)
- With source and drain on different levels, e.g., sloping channel (EPO) (Class 257/E21.692)