Abstract: A semiconductor apparatus includes a programmable logic chip configured to output a control signal, and a memory chip coupled to the programmable logic chip. The memory chip includes a plurality of memory cores, a plurality of bus-interface circuits each configured to couple with the memory cores, and a selection circuit configured to couple the memory cores with one of the bus-interface circuits in response to a predetermined logic level of the control signal.

Abstract: A semiconductor apparatus includes an individual-chip-designating-code setting block configured to generate a plurality of sets of individual-chip-designating-codes which have different code values or in which at least two sets of individual-chip-designating-codes have the same code value, in response to a plurality of chip fuse signals; a control block configured to generate a plurality of enable control signals in response to the plurality of chip fuse signals and most significant bits of the plurality of sets of individual-chip-designating-codes; and an individual chip activation block configured to compare individual-chip-designating-codes of the plurality of sets of individual-chip-designating-codes excluding the most significant bits, with chip selection addresses in response to the plurality of enable control signals, and enable one of a plurality of individual-chip-activation-signals depending upon a comparison result.

Abstract: A semiconductor memory device comprises: a memory cell array including a plurality of memory cells; an internal circuit having a function required in a storage operation of the memory cell array; a parameter storage unit configured to store a certain parameter and to have a storage place specified by a parameter address, the certain parameter designating an operation of the internal circuit; a command register configured to store a command instructing an operation of the internal circuit; and a converting circuit configured to adjust at least one of the parameter address and the command that differ between products or between standards to the internal circuit.

Abstract: Various embodiments of a semiconductor apparatus are disclosed. In one exemplary embodiment, a semiconductor apparatus may include a memory block chip and a signal input/output chip. The memory block chip is configured to control a data access size according to specifications. The signal input/output chip is configured to transmit input data from an external device to the memory block chip or transmit output data from the memory block chip to an external device and process the input data or the output data by selectively enabling a clock phase control unit and a signal processing unit according to the specifications.

Abstract: A memory includes a local word line driver for a memory array having a first word line and a second word line. The local word line driver includes a first selection transistor, a second selection transistor, and a middle transistor disposed between the first and second selection transistors. The first word line couples to the first selection transistor and the middle transistor, and the second word line couples to the middle transistor and the second selection transistor.

Abstract: An integrated circuit device may include a mask register that stores mask values writable from a processor interface; and mask logic that selectively masks status indications from each of a plurality of buffers according to stored mask values; wherein the buffers alter the status indications in response to accesses from at least one different interface other than the processor interface.

Abstract: In a method of estimating a self refresh period of a semiconductor memory device according to an exemplary embodiment, a plurality of internal address signals are reset in response to a refresh reset signal. The plurality of internal address signals are sequentially changed synchronously with an oscillation signal. A refresh completion signal is generated based on the plurality of internal address signals. The self refresh period is detected based on the refresh reset signal and the refresh completion signal.

Abstract: A memory cell comprising a first switch device, a second switch device and a capacitor is disclosed. The first switch device has: a control terminal coupled to a select line, wherein the first switch device is controlled by the select line; a first terminal, coupled to a bit line parallel with the select line. The second switch device has: a first terminal, coupled to the second terminal of the first switch device; a control terminal, coupled to a word line orthogonal to the bit line and the select line, wherein the second switch device is controlled by the word line. The capacitor has a first terminal coupled to the second terminal of the second switch device and a second terminal coupled to a predetermined voltage level, wherein the data is read from the capacitor or written to the capacitor via the bit line.

Abstract: A semiconductor storage device, in which successive reading and successive writing of data having a predetermined length from and to a memory cell specified by a certain address are performed, includes a plurality of memory cells, address input terminals through which the address is input, data output terminals through which read data having the predetermined length is output, and data input terminals through which write data having the predetermine length is input. Part of the address input terminals are also used as the data output terminals. In this way, the operation of successive reading and successive writing performed in succession at the same address can be made faster without increasing the number of terminals.

Abstract: A system for implementing a non-volatile input/output (I/O) device based memory can include an interface configured to receive a processor request specifying a data unit. The data unit can be specified by a processor address. The system can include an address-data converter coupled to the interface. The address-data converter can be configured to correlate the processor address of the data unit to a data block within the non-volatile I/O device. The system further can include an I/O controller coupled to the address-data converter. The I/O controller can be configured to issue a non-volatile I/O device command specifying the data block to the non-volatile I/O device.

Abstract: The present invention provides a novel wiring method for LR-DIMM of VLP type that conforms to LR-DIMM technology. The LR-DIMM comprises a plurality of DRAMs mounted on a board, two connectors mounted on the board for receiving data, and a buffer device mounted on the board for redriving data applied to the two connectors to supply the data to the plurality of DRAMs. The buffer device is located near the center of the board on which the two connectors are arranged at both ends thereof, and supplies data from each connector to DRAMs arranged on the opposite side to the connector.

Abstract: The number of fusible links and other circuit components required to provide memory cell redundancy are reduced by sharing physical memory locations among address banks that store memory addresses. Non-trial and error algorithms and techniques determine the number of addresses and the number of identical least significant bit (LSB) values that can share the same physical memory location. By sharing physical locations for identical LSB values, circuit hardware on a memory device (including fusible links and compare circuitry) is reduced. Thus, less die area is needed to provide the same degree of redundancy.

Abstract: Embodiments of the invention are generally directed to systems, methods, and apparatuses for a common memory device for variable device width and scalable pre-fetch and page size. In some embodiments, a common memory device (such as a DRAM) can operate in any of a number of modes including, for example, a ×4 mode, a ×8 mode, and a ×16 mode. The page size provided by the DRAM may vary depending on the mode of the DRAM. In some embodiments, the amount of data pre-fetched by the DRAM also varies depending on the mode of the DRAM.

Abstract: Various embodiments are disclosed relating to a memory circuit architecture. In an example embodiment, which may accommodate a change to a new memory size or cell aspect ratio, while migrating between different process nodes or the same process generation, while retaining at least a portion of the periphery circuitry, a memory circuit architecture may be employed in which the memory array is divided into an upper half and a lower half, thereby splitting the cache Ways among the two halves. The wordline may be split among the two array halves, with each half driven by a half wordline driver. Also, in another embodiment, two sets of bitlines may be provided for each column, including a contacted set of bitlines and a feed-through set of bitlines.

Abstract: A semiconductor device according to the present invention includes plural controlled chips CC0 to CC7 that hold mutually different layer information, and a control chip IF that supplies in common layer address signals A13 to A15 and a command signal ICMD to the controlled chips. Each bit that constitutes the layer address signals A13 to A15 is transmitted via at least two through silicon vias that are connected in parallel for each controlled chip out of plural first through silicon vias. Each bit that constitutes the command signal ICMD is transmitted via one corresponding through silicon via that is selected by an output switching circuit and an input switching circuit. With this configuration, the layer address signals A13 to A15 reach the controlled chips earlier than the command signal ICMD.

Abstract: Memories, memory arrays, and methods for selectively providing electrical power to memory sections of a memory array are disclosed. A memory array can be operated by decoupling row decoder circuitry from receiving electrical power while the memory array is not being accessed. Portions of the memory array to be accessed are determined from external memory addresses and the row decoder for the portions of the memory array to be accessed are selectively provided with electrical power. The section of memory is then accessed. One such array includes memory section voltage supply rails having decoder circuits coupled to receive electrical power, and further includes memory section power control logic. The control logic selectively couples the memory section voltage supply rail to a primary voltage supply to provide electrical power to the memory section voltage supply rail in response to being selected based on memory addresses.

Abstract: A memory system that includes a memory device and a memory bank. During operation, the memory device receives a request to concurrently access a data word at a first row in a first storage region of the memory bank and error information associated with the data at a second row in a second storage region of the memory bank. The memory request includes a first row address identifying the first row and a second row address identifying the second row. Next, the memory device routes the first row address and the second row address to a first row decoder and a second row decoder in the memory bank, respectively. Finally, the memory device uses the first row decoder to decode the first row address to access the first row and concurrently uses the second row decoder to decode the second row address to access the second row.

Abstract: A memory system includes a master device, such as a graphics controller or processor, and an integrated circuit memory device operable in a dual column addressing mode. The integrated circuit memory device includes an interface and column decoder to access a row of storage cells or a page in a memory bank. During a first mode, a first row of storage cells in a first memory bank is accessible in response to a first column address. During a second mode, a first plurality of storage cells in the first row of storage cells is accessible in response to a second column address during a column cycle time interval. A second plurality of storage cells in the first row of storage cells is accessible in response to a third column address during the column cycle time interval. The first and second pluralities of storage cells are concurrently accessible from the interface.

Abstract: A semiconductor device includes a test circuit that generates a pulse signal from a timing signal. The test circuit outputs the pulse signal and a first set of address signals in response to a first type transition of the timing signal. The test circuit outputs the pulse signal and a second set of address signals in response to a second type transition of the timing signal. The second set of address signals is different from the first set of address signals.

Abstract: A nonvolatile memory device includes a plurality of memory blocks, a plurality of erasure detection units provided at the plurality of memory blocks, respectively, and configured to each detect erasure of the respective memory blocks, and a control unit configured to determine that a memory block is a bad memory block when a number of erasure operations performed on the memory block as detected by the respective erasure detection unit is greater than a reference value.

Abstract: A memory system includes a memory device, a control device configured to control the memory device, a first channel configured to transfer a row command from the control device to the memory device, and a second channel configured to transfer a column command from the control device to the memory device.

Abstract: A main decoding circuit includes a shared column selection signal generating unit and a switching unit. The shared column selection signal generating unit receives a column decoding signal to generate a shared column selection signal. The switching unit selectively provides the shared column selection signal to one of a column selection line of a first memory bank and a column selection line of a second memory bank in response to a bank selection signal.

Abstract: A memory accessing device includes a generator which generates K (K: an integer equal to or more than two) of address coefficients corresponding to a first mode whereas generates L (L: an integer more than K) of address coefficients corresponding to a second mode. A first converter converts each value of the address coefficients generated by the generator into a value of 1/M (M: an integer equal to or more than two). A creator creates address information based on the address coefficients generated by the generator corresponding to the first mode whereas creates address information based on address coefficients converted by the first converter corresponding to the second mode. An outputter outputs the address information created by the creator in order to access a memory provided with a plurality of addresses each of which has a bit width equivalent to any one of N bits and N/M bits.

Abstract: A flash memory device includes a plurality of memory blocks and a plurality of block selection circuits corresponding to the plurality of memory blocks. All of the block selection circuits are sequentially operated in response to block control signals, or two or more of the block selection circuits are operated in response to the block control signals.

Abstract: In one embodiment of the invention, a memory integrated circuit is provided including an address decoder to selectively access memory cells within a memory array; a mode register with bit storage circuits to store an enable bit and at least one sub-channel select bit; and control logic. The control logic is coupled to a plurality of address signal lines, the address decoder, and the mode register. In response to the enable bit and the at least one sub-channel select bit, the control logic selects one or more of the address signal lines to capture independent address information to support independent sub-channel memory accesses into the memory array. The control logic couples the independent address information into the address decoder.

Abstract: A semiconductor memory apparatus is provided. The semiconductor memory apparatus comprises: first and second memory banks located a predetermined distance from each other in a first direction; a common column selection control unit located at an outside region in the first and second memory banks in the first direction, and configured to commonly control access to column areas in the first and second memory banks and generate a column selection signal that controls data access to the corresponding memory cells in the first and second memory banks; a first data read/write unit configured to sense and amplify read data transferred from the first memory bank and transfer write data to the first memory bank; and a second data read/write unit configured to sense and amplify read data transferred from the second memory bank and transfer write data to the second memory bank.

Abstract: During a programming data transfer process in a non-volatile storage system, recording units of data are transferred from a host to a memory device, such as a memory card. For each recording unit, pages of data are arranged in an order such that a page which takes longer to write to a memory array of the memory device is provided before a page which takes less time to write. Overall programming time for the recording unit is reduced since a greater degree of parallel processing occurs. While the page which takes longer to program is being programmed to the memory array, the page which takes less time to program is being transferred to the memory device. After programming is completed, the memory device signals the host to transfer a next recording unit. The pages of data may include lower, middle and upper pages.

Abstract: An integrated circuit and method for modifying data by compressing the data in third dimensional memory technology is disclosed. In a specific embodiment, an integrated circuit is configured to perform compression of data disposed in third dimensional memory. For example, the integrated circuit can include a third dimensional memory array configured to store an input independent of storing a compressed copy of the input, a processor configured to compress the input to form the compressed copy of the input, and a controller configured to control access between the processor and the third dimensional memory array. The third dimension memory array can include one or more layers of non-volatile re-writeable two-terminal cross-point memory arrays fabricated back-end-of-the-line (BEOL) over a logic layer fabricated front-end-of-the-line (FEOL). The logic layer includes active circuitry for data operations (e.g., read and write operations) and data compression operations on the third dimension memory array.

Abstract: Memories, memory arrays, and methods for selectively providing electrical power to memory sections of a memory array are disclosed. A memory array can be operated by decoupling row decoder circuitry from receiving electrical power while the memory array is not being accessed. Portions of the memory array to be accessed are determined from external memory addresses and the row decoder for the portions of the memory array to be accessed are selectively provided with electrical power. The section of memory is then accessed. One such array includes memory section voltage supply rails having decoder circuits coupled to receive electrical power, and further includes memory section power control logic. The control logic selectively couples the memory section voltage supply rail to a primary voltage supply to provide electrical power to the memory section voltage supply rail in response to being selected based on memory addresses.

Abstract: In one embodiment of the invention, a memory integrated circuit is provided including a memory array, a register, and control logic coupled to the register. The memory array in the memory integrated circuit stores data. The register includes one or more bit storage circuits to store one or more identity bits of an identity value. The control logic provides independent sub-channel memory access into the memory integrated circuit in response to the one or more identity bits stored in the register.

Abstract: A semiconductor storage device includes an external terminal to which a first signal is supplied, a core circuit, and an access operation control circuit that generates a signal indicating an access operation mode to the core circuit for subsequent cycles based on a pulse width of the first signal.

Abstract: An image compression and decompression method compresses data based upon the data states, and decompresses the compressed data based upon the codes generated during the compression.

Abstract: A semiconductor memory in which arbitrary operation mode information is set in a plurality of CRs at test time. When a CR control circuit detects write commands to write to an address or read commands to read from the address in a predetermined order, the CR control circuit updates the operation mode information for each of the plurality of CRs on a time division basis. A command generation section generates the write commands, the read commands, or a test start command in response to a control signal from the outside. A data pad compression circuit changes the operation mode information to be written to the plurality of CRs by using test data inputted to part of data pads, after inverting the test data or in its original condition according to a code, as data for a rest of the data pads.

Abstract: Methods, devices and systems for reducing the quantity of external interconnections of a memory device are disclosed. Implementation of one such method, device and system includes inputting over an address bus a first portion of an address of a next row of memory cells to be activated. The first portion of the address of the next row of memory cells to be activated is embedded in a command related to the previously activated row of memory cells. The next row of memory cells is subsequently activated according to a concurrently received second portion of the address of the next row of memory cells also received over the address bus. The portioning of the address signals can reduce the width of the address bus and, therefore, the number of required respective external interconnections.

Abstract: A programming technique reduces program disturb in a set of non-volatile storage elements by programming using selected bit line patterns which increase the clamped boosting potential of an inhibited channel to avoid program disturb. One aspect groups alternate pairs of adjacent bit lines into first and second sets. Dual programming pulses are applied to a selected word line. The first set of bit lines is programmed during the first pulse, and the second set of bit lines is programmed during the second pulse. A verify operation is then performed for all bit lines. When a particular bit line is inhibited, at least one of its neighbor bit lines will also be inhibited so that the channel of the particular bit line will be sufficiently boosted. Another aspect programs every third bit line separately. A modified layout allows adjacent pairs of bit lines to be sensed using odd-even sensing circuitry.

Abstract: A non-volatile memory comprising a NOR block with a first sub-block independently addressable from a second sub-block, the two sub-blocks sharing a physical substrate of the NOR block, and a first memory to store execution status information to reflect an erase status of the first sub-block. A method to selectively erase the first sub-block while inhibiting the second sub-block from erasing, comprising updating execution status information associated with the first sub-block and resuming erasing upon an occurrence of an interruption event depending on the indication of the execution status information.

Abstract: Described are memory modules that support dynamic point-to-point extensibility using fixed-width memory die. The memory modules include data-width translators that allow the modules to vary the effective width of their external memory interfaces without varying the width of the internal memory interfaces extending between the translators and associated fixed-width dies. The data-width translators use a data-mask signal to selectively prevent memory accesses to subsets of physical addresses. This data masking divides the physical address locations into two or more temporal subsets of the physical address locations, effectively increasing the number of uniquely addressable locations in a given module. Reading temporal addresses in write order can introduce undesirable read latency. Some embodiments reorder read data to reduce this latency.

Abstract: A system memory includes a memory hub controller, a memory module accessible by the memory hub controller, and an expansion module having a processor circuit coupled to the memory module and also having access to the memory module. The memory hub controller is coupled to the memory hub through a first portion of a memory bus on which the memory requests from the memory hub controller and memory responses from the memory hub are coupled. A second portion of the memory bus couples the memory hub to the processor circuit and is used to couple memory requests from the processor circuit and memory responses provided by the memory hub to the processor circuit.

Abstract: A memory circuit comprises a memory array including a plurality of memory cells, multiple word lines, and at least one bit line. Each of the memory cells is coupled to a unique pair of a bit line and a word line for selectively accessing the memory cells. The memory circuit further includes at least one control circuit coupled to the word lines and operative to selectively change an operation of the memory array between a first data storage mode and at least a second data storage mode as a function of at least one control signal supplied to the control circuit. In the first data storage mode, each of the memory cells is allocated to a corresponding stored logic bit, and in the second data storage mode, at least two memory cells are allocated to a corresponding stored logic bit.

Abstract: An information processing apparatus includes a memory configured such that structural data areas holding therein structural data, each being constituted by a plurality of pieces of element data, are allocated to a plurality of memory banks, an address area detecting unit configured to detect whether an address value used to access the memory is included in a specific address area including an address used to access the plurality of pieces of element data and an address converting unit configured to convert the address value to an address value for the structural data area in the case that it has been detected that the address value is included in the specific address area.

Abstract: A memory structure is described. In one embodiment, the memory structure comprises a memory controller configured to receive a clock signal and to be coupled to a plurality of memory modules via a single address/control bus. The memory controller couples to each of the plurality of memory modules via a separate chip select signal for each memory module. The memory controller issues commands across the address/control bus to the memory modules in an interleaved fashion in accordance with the timing supplied by the clock. During a waiting period after issuance of a command to one memory module, the memory controller can issue commands to a different memory module.

Abstract: An electronic assembly includes electronic modules connected in a series circuit such that a particular number of input connections of one of the electronic modules is connected with the particular number of output connections of another of the electronic modules. Each electronic module is configured to pass on an information which each electronic module receives on an input side at an nth of each electronic module's input connections to an nth of each electronic module's output connections. The input connections and output connections of each electronic module are arranged in a same geometric arrangement.

Abstract: A voltage memory switch may be formed of an amorphous semiconductor threshold switch and a select device. The amorphous threshold switch may be latched into one of two different current conducting levels. Then, in some embodiments, a relatively dense memory array can be achieved by maintaining an appropriate bias on the cell to prevent it from losing the programmed state.

Abstract: A row address decoder includes a first main word line decoding unit decoding first and second row addresses to generate first to fourth main decoding signals. When a data storage test is performed, the first to fourth main decoding signals are enabled at first to fourth timings, respectively. The row address decoder also includes a second main word line decoding unit decoding third and fourth row addresses to generate fifth to eighth main decoding signals. When a data storage test is performed, the fifth to eight main decoding signals are enabled at first to fourth timings, respectively. A main word line enable signal generating unit decodes the first to fourth main decoding signals and the fifth to eighth main decoding signals to generate first to sixteenth main word line enable signals that are enabled at different times.

Abstract: An electronic flash memory external storage method and device for data processing system includes firmware which directly controls the access of electronic storage media and implements standard interface functions, adopts particular reading and writing formats of the external storage media, receives power via USB, externally stores data by flash memory and access control circuit with the cooperation of the firmware and the driver with the operating system, and has write-protection so that the data can be safely transferred. The method according to present invention is highly efficient and all parts involved are assembled as a monolithic piece so that it has large-capacity with small size and high speed. The device operates in static state and is driven by software. It is plug-and-play and adapted to data processing system.

Abstract: A semiconductor memory circuit, comprising: a memory array, the memory array including a plurality of wordlines each connected to a respective row of cells and a plurality of bitlines each connected to a respective column of cells. The semiconductor memory circuit also comprises at least one row decoder for selecting a group of wordlines within the plurality of wordlines; and a plurality of driver circuits for driving the plurality of bitlines respectively and setting the cells connected to the group of wordlines to a predetermined logic state. Also, a method for presetting at least part of a memory array, the memory array comprising a plurality of wordlines each connected to a respective row of cells. The method comprises selecting a group of wordlines within the plurality of wordlines; and simultaneously setting memory cells connected to the group of wordlines to a predetermined logic state.

Abstract: An access area is set within an address space of a dynamic random access memory by arranging two or more complete columns of blocks, in which blocks of memory cells are arranged within an entirety of a specified range of row addresses, along a direction of column addresses. Each of the blocks includes memory cells positioned at a same row address and a specified number of consecutive column addresses. The total number of blocks arranged in the access area is just capable of storing the number of words of the data to be stored. The two or more complete columns of blocks are successively accessed by successively accessing the blocks arranged in each of the columns of blocks. Thereby, a refresh operation of the dynamic random access memory is made unnecessary.

Abstract: Subject matter disclosed herein relates to accessing memory, and more particularly to a wordline driver of same.

Abstract: A redundancy circuit of a semiconductor memory apparatus includes an enable signal generation unit configured to have a plurality of enable fuses corresponding to a first mat grouping information signal and a second mat grouping information signal and enable an enable signal when at least one of the plurality of enable fuses is cut and a mat grouping information signal corresponding to the cut fuse is inputted; a fail address setting control block configured to select the first mat grouping information signal or the second mat grouping information signal depending upon whether an enable fuse corresponding to the first mat grouping information signal is cut or not, and generate fail setting addresses; and a comparison section configured to compare the fail setting addresses with real addresses and generate a redundancy address.

Abstract: A method, an apparatus and a controller for managing memories are provided. In the present invention, a data accessing format of each of the memories is adjusted such that the accessing units for each data accessing operation are unified. A mapping table is then established for recording the adjusted data accessing format. When a data accessing command is received from a host, the mapping table is inquired so as to execute the data accessing command. Accordingly, incompatibility of hardware structures can be resolved, and management of different types of flash memory can be achieved.