Abstract: A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.

Abstract: A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer.

Abstract: Many thousands of micro-LEDs (e.g., 25 microns per side) are deposited on a substrate. Some of the LEDs are formed to emit a peak wavelength of 450 nm (blue), and some are formed to emit a peak wavelength of 490 nm (cyan). A YAG (yellow) phosphor is then deposited on the LEDs, or a remote YAG layer is used. YAG phosphor is most efficiently excited at 450 nm and has a very weak emission at 490 nm. The two types of LEDs are GaN based and can be driven at the same current. The ratio of the two types of LEDs is controlled to achieve the desired overall color emission of the LED lamp. The blue LEDs optimally excite the YAG phosphor to produce white light having blue and yellow components, and the cyan LEDs broaden the emission spectrum to increase the CRI of the lamp while improving luminous efficiency. Other embodiments are described.

Abstract: A LED includes a red light emitting unit, a green light emitting unit, a blue light emitting unit, and an optical grating located on a same plane. The red light emitting unit, the green light emitting unit and the blue light emitting unit are located around the optical grating. Each light emitting unit includes a first substrate, a first semiconductor layer, an first active layer, a second semiconductor layer and a first reflector layer stacked in that order. The optical grating includes a second substrate, a first semiconductor layer, an active layer, and a second semiconductor layer stacked in that order. The second substrate and the three first substrates are a continuous integrated substrate structure.

Abstract: A method of manufacturing an LED package including steps: providing an electrode, the electrode including a first electrode, a second electrode, a channel defined between the first electrode and the second electrode, the first electrode and the second electrode arranged with intervals mutually, a cavity arranged on the first electrode, and the cavity communicating with the channel; arranging an LED chip electrically connecting with the first electrode and the second electrode and arranged inside the cavity; providing a shield covering the first electrode and the second electrode; injecting a transparent insulating material to the cavity via the channel, and the first electrode, the second electrode, and the shield being interconnected by the transparent insulating material; solidifying the transparent insulating material to obtain the LED package.

Abstract: A method for depositing a layer of phosphor-containing material on a plurality of LED (light-emitting diode) dies on a wafer includes disposing a layer of dry photoresist film over a plurality of LED dies on a wafer, disposing a mask layer over the dry photoresist film, and patterning the dry photoresist film to form a plurality of openings in the dry photoresist film to expose a top surface of each of the LED dies. The method also includes depositing a phosphor-containing material on the exposed top surface of each the LED dies using a screen printing process, and removing the patterned dry photoresist film.

Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.

Abstract: Provided is a producing of a surface-emitting laser capable of aligning a center axis of a surface relief structure with that of a current confinement structure with high precision to reduce a surface damage during the producing. The producing of the laser having the relief provided on a laminated semiconductor layer and a mesa structure, the process comprising the steps of: forming, on the layer, one of a first dielectric film and a first resist film having a first pattern for defining the mesa and a second pattern for defining the relief and then forming the other one of the films; forming a second resist film to cover the second pattern and expose the first pattern; and forming the mesa by removing the layer under the first pattern using the second resist film.

Abstract: An organic light-emitting display device includes a gate electrode, a source electrode, and a drain electrode on a substrate, a gate interconnection line connected to the gate electrode, a source and drain interconnection line connected to the source and drain electrodes, a first test pad electrically connected to the source and drain interconnection line, and a second test pad electrically connected to the gate interconnection line. The second test pad is at a same level as the first test pad, and the gate electrode is on a different layer than the source and drain electrodes.

Abstract: A method for producing an optical semiconductor device includes the steps of forming a semiconductor structure; forming a mask on the semiconductor structure; etching the semiconductor structure with the mask to form first and second stripe-shaped grooves and a mesa portion; forming a protective film on a top surface and side surfaces of the mesa portion; forming a resin portion on the protective film; etching the resin portion and the protective film formed on the top surface; forming an upper electrode on the top surface; and forming an electrical interconnection on the resin portion. The resin portion has an inclined surface region that rises from a first point above the mesa portion toward a second point above the first stripe-shaped groove. The step of etching the resin portion and the protective film includes the substeps of etching the resin portion and simultaneously etching the resin portion and the protective film.

Abstract: A method for manufacturing interdigitated back contact photovoltaic cells is disclosed. In one aspect, the method includes providing on a rear surface of a substrate a first doped layer of a first dopant type, and providing a dielectric masking layer overlaying it. Grooves are formed through the dielectric masking layer and first doped layer, extending into the substrate in a direction substantially orthogonal to the rear surface and extending in a lateral direction underneath the first doped layer at sides of the grooves. Directional doping is performed in a direction substantially orthogonal to the rear surface, thereby providing doped regions with dopants of a second dopant type at a bottom of the grooves. Dopant diffusion is performed to form at the rear side of the substrate one of the emitter regions and back surface field regions between the grooves and the other at the bottom of the grooves.

Abstract: A printing apparatus includes a printing mask, which is disposed between a substrate having a display area and a non-display area surrounding the display area. The apparatus further includes a nozzle discharging an organic light emitting liquid onto the substrate. The printing mask includes a mask open part and a mask cover part. The mask open part exposes the display area, and the mask cover part surrounds the mask open part and covers the non-display area. The apparatus can be used to form an organic emitting layer on the substrate.

Abstract: According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

Abstract: Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.

Abstract: A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer.

Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.

Abstract: A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

Abstract: The organic light emitting display device includes a substrate, a thin film transistor formed on the substrate, a protective film formed to cover the thin film transistor, a color filter layer formed on the substrate exposed by removing a gate insulating layer of the thin film transistor and the protective film, an overcoat layer formed over the entire surface of the substrate to cover the color filter layer and the protective film, a drain contact hole exposing the thin film transistor by selectively removing the protective film and the overcoat layer, and a first electrode connected to the thin film transistor through the drain contact hole on the overcoat layer, a white organic light emitting layer formed on the first electrode, and a second electrode formed to cover the white organic light emitting layer.

Abstract: A pixel structure disposed on a substrate is provided. The pixel structure includes a gate electrode, a first gate insulation layer, a pixel electrode, a second gate insulation layer, a channel layer, a source electrode, a drain electrode and a common electrode. The gate electrode is disposed on the substrate and covered by the first gate insulation layer. The pixel electrode is disposed on the first gate insulation layer and covered by the second gate insulation layer. The pixel electrode is located between the first and the second gate insulation layers. The second gate insulation layer has a first contact opening exposing a portion of the pixel electrode. The channel layer is disposed on the second gate insulation layer. The drain electrode electrically connected to the pixel electrode. The source electrode is disposed on the second gate insulation layer. The common electrode is disposed on the second gate insulation layer.

Abstract: A method for producing a group III nitride semiconductor light-emitting device, by which a non-light-emitting region is easily formed, is disclosed. Mg is activated to convert a p-type layer into p-type, and a p-electrode is then formed on the p-type layer. An Ag paste is applied to a region on the p-electrode and overlapping an n-electrode formed in a subsequent step. Heat treatment is conducted to solidify the Ag paste, thereby forming an Ag paste solidified body. By this, a region overlapping the Ag paste solidified body in a planar view, of the p-type layer converts into a region having high resistance, and a high resistance region is formed. As a result, a region overlapping the high resistance region in a planar view, of a light-emitting layer becomes a non-light-emitting region.

Abstract: In an interlayer insulating layer, upper surface portions in edge regions near banks are located higher than an upper surface portion in a central region. In an anode formed to extend along upper surface portions, upper surface portions in edge regions near banks are located higher than an upper surface portion in a central region. In hole injection transporting layer formed to extend along upper surface portions, upper surface portions in edge regions near banks are located higher than an upper surface portion in central region. In an organic light-emitting layer, upper surface portions in edge regions (regions C1 and C2) near banks are located higher than an upper surface portion in a central region (region C3). As a result, in an organic light-emitting layer, thicknesses D1 and D2 are equal to thickness D3.

Abstract: To provide a light emitting device in which generation of cross talk between adjacent light emitting elements is suppressed, even when the light emitting device uses a light emitting element having high current efficiency. Also, to provide a light emitting device having high display quality even when the light emitting device uses a light emitting element having high current efficiency. The light emitting device has a pixel portion including a plurality of light emitting elements, wherein each of the plurality of light emitting elements includes a plurality of light emitting bodies provided between a first electrode and a second electrode and a conductive layer formed between the plurality of light emitting bodies, wherein the conductive layer is provided for each light emitting element, and wherein an edge portion of the conductive layer is covered with the plurality of light emitting bodies.

Abstract: A nitride-based semiconductor light-emitting element disclosed in the present application includes: an active layer having a growing plane which is an m-plane and which is made of a GaN-based semiconductor; and at least one radiation surface at which light from the active layer is to be radiated. The radiation surface has a plurality of protrusions on the m-plane. A base of each of the plurality of protrusions is a region inside a closed curve, and a shape of the base has a major axis and a minor axis. An angle between the major axis and an extending direction of an a-axis of a crystal is not more than 45°.

Abstract: The invention relates to an organic light emitting device, in a layered structure, comprising a substrate, a bottom electrode, a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, an electrically active region, the electrically active region comprising one or more organic layers and being provided between and in electrical contact with the bottom electrode and the top electrode, a light emitting region provided in the electrically active region, and a roughening layer, the roughening layer being provided as non-closed layer in the electrically active region and providing an electrode roughness to the top electrode by roughening the top electrode on at least one an inner side facing the electrically active region and an outer side of the top electrode facing away from the electrically active region. Furthermore, a further organic light emitting device, and a method of producing an organic light emitting device are provided.

Abstract: The present invention relates to a polymeric electroluminescent device and a method for preparing the same. The device comprises a conductive anode substrate, a hole injecting layer, a hole transportation layer, an electron barrier layer, a light-emitting layer, an electron transportation layer, an electron injecting layer and a cathode laminated in succession, and the material for the electron barrier layer is one selected from lithium fluoride, lithium carbonate, lithium oxide and lithium chloride. By preparing lithium compound as an inorganic electron barrier layer, the polymeric electroluminescent device is made of cheap materials which are easily obtainable, and most importantly has a low work function of approximately 2.0 eV, which can form a transition potential barrier of approximately 1.

Abstract: According to various embodiments, an electrode may include at least one layer including a chemical compound including aluminum and titanium.

Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer over the first conductive semiconductor layer; a second conductive semiconductor layer over the active layer; a bonding layer over the second conductive semiconductor layer; a schottky diode layer over the bonding layer; an insulating layer for partially exposing the bonding layer, the schottky diode layer, and the first conductive semiconductor layer; a first electrode layer electrically connected to both of the first conductive semiconductor layer and the schottky diode layer; and a second electrode layer electrically connected to the bonding layer.

Abstract: Methods and apparatus for a sensor are disclosed. An oxide layer is formed on a substrate, followed by a spacer layer and a buffer layer. A photoresist layer is formed on the buffer layer over a pixel region, with an opening exposing a first part of the buffer layer. A first etching is performed to remove the first part of the buffer layer to expose a first part of the spacer layer. A second etching is performed to remove the first part of the spacer layer, the remaining buffer layer, and partially remove a second part of the spacer layer so that the result spacer layer will have an end with a shape substantially similar to a triangle, a height of the end is in a substantially same range as a length of the end.

Abstract: A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure.

Abstract: A white LED lighting device driven by a pulse current is provided, which consists of blue, violet or ultraviolet LED chips, blue afterglow luminescence materials A and yellow luminescence materials B. Wherein the weight ratio of the blue afterglow luminescence materials A to the yellow luminescence materials B is 10-70 wt %:30-90 wt %. The white LED lighting device drives the LED chips with a pulse current having a frequency of not less than 50 Hz. Because of using the afterglow luminescence materials, the light can be sustained when an excitation light source disappears, thereby eliminating the influence of LED light output fluctuation caused by current variation on the illumination. At the same time, the pulse current can keep the LED chips being at an intermittent work state, so as to overcome the problem of chip heating.

Abstract: Disclosed herein is an organic EL display device including, on a substrate: lower electrodes; first hole injection/transport layers; second organic light-emitting layers of colors other than blue; a blue first organic light-emitting layer; electron injection/transport layers; and an upper electrode.

Abstract: A deposition apparatus is capable of checking, in real time, the thickness or uniformity of a thin layer which is formed. The deposition apparatus includes a moving unit to which a substrate is detachably fixed. A conveyer unit conveys the moving unit in a first direction or in an opposite direction to the first direction. A deposition unit includes at least one deposition assembly for depositing a deposition material on the substrate. A discharge data acquisition unit acquires data associated with the amount of the deposition material discharged per unit time from the at least one deposition assembly. A transmission unit transmits the data acquired by the discharge data acquisition unit.

Abstract: According to one embodiment, a display device includes a first substrate, a second substrate, a display layer, a seal unit, a protrusion and a spacing adjustment layer. The display layer is provided between the first substrate and the second substrate. The seal unit surrounds the display layer between the first substrate and the second substrate. The protrusion is provided along an outer edge of the seal unit at an outside of the seal unit on a first major surface of the first substrate facing the display layer. The spacing adjustment layer is provided along the outer edge at the outside of the seal unit, includes a portion overlaying the protrusion as viewed along a direction from the first substrate toward the second substrate, and is in contact with the protrusion.

Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.

Abstract: A white LED lighting device driven by a pulse current is provided, which consists of blue, violet or ultraviolet LED chips, blue afterglow luminescence materials A and yellow luminescence materials B. Wherein the weight ratio of the blue afterglow luminescence materials A to the yellow luminescence materials B is 10-70 wt %:30-90 wt %. The white LED lighting device drives the LED chips with a pulse current having a frequency of not less than 50 Hz. Because of using the afterglow luminescence materials, the light can be sustained when an excitation light source disappears, thereby eliminating the influence of LED light output fluctuation caused by current variation on the illumination. At the same time, the pulse current can keep the LED chips being at an intermittent work state, so as to overcome the problem of chip heating.

Abstract: An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlxGa1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.

Abstract: A method for fabricating an LED light tube includes: fabricating a heat dissipation base having a light emitting side with a recess and a reception chamber; disposing one illumination unit and one bridging unit on the recess, wherein the illumination unit and the bridging unit are constituted by LED dies and conductive elements, respectively; fixing a circuit unit on the light emitting side in such a manner that the circuit is located adjacent to the recess; applying wire-bond technique to connect the LED dies and the conductive elements electrically; forming an optical layer over the LED dies; forming a protection layer on the optical layer; establishing electrical connection among the circuit unit, the conductive elements and the LED dies; installing a power supply source within the reception chamber; and disposing a diffusion shield over the dissipation base and two end caps respectively on two ends of the dissipation base.

Abstract: An organic layer forming apparatus includes a donor film supply part configured to supply a donor film. The donor film includes a base substrate, a transfer layer disposed on the base substrate, and a protective film disposed on the transfer layer. The apparatus also includes a protective film withdrawal part configured to remove the protective film from the donor film, a transfer printing process part configured to transfer the transfer layer of the donor film onto a transfer substrate to form a first organic layer, a first deposition part configured to form a second organic layer on the transfer layer through a first deposition process, a second deposition part configured to form a third organic layer on the transfer layer through a second deposition process, and a donor film withdrawal part configured to withdraw the donor film.

Abstract: A method of manufacturing an organic-light-emitting-diode (OLED) flat-panel light-source apparatus. The method includes depositing a metal layer on a substrate and patterning the metal layer to form a plurality of subsidiary electrodes, forming an insulating layer on the substrate including the plurality of subsidiary electrodes and forming a first subsidiary electrode layer by etching the insulating layer until some of the plurality of subsidiary electrodes are exposed, and sequentially forming an anode, an organic emission layer (EML), and a cathode on the substrate on which the first subsidiary electrode layer is formed.

Abstract: An organic light-emitting layer forming apparatus includes a stage supporting an intermediate product of an organic light emitting device, which includes a substrate, and a pixel defining layer including first openings. The apparatus includes a first mask disposed over the stage and including second openings, and a second mask disposed over the first mask and including third openings. The second mask is movable relative to the first mask between first and second positions. The third openings do not overlap the second openings in the first position while overlapping the second openings in the second position. T he apparatus includes an inkjet head unit disposed over the second mask and supplying an organic material to the third openings of the second mask in the first position. The second mask moves to the second position to transfer the organic material through the second openings.

Abstract: The present application relates to a method for fabricating an organic light emitting display device, comprising: forming a drive thin film transistor on a substrate at a non-light emission region; forming a protective layer on the substrate; forming a color filter on the protective layer; forming a planarizing layer on a protective layer including the color filter; selectively removing the protective layer and the light compensating layer to form a first drain contact hole which exposes a drain electrode of the drive thin film transistor; forming a light compensating layer on the planarizing layer to have a second drain contact hole which exposes the first contact hole, and a dummy hole to expose the planarizing layer; and forming an organic light emitting element on the light compensating layer to be in contact with the drain electrode through the first and second drain contact holes.

Abstract: To provide a light-emitting element or a light-emitting device in which power is not consumed wastefully even if a short-circuit failure occurs. The present invention focuses on heat generated due to a short-circuit failure which occurs in a light-emitting element. A fusible alloy which is melted at temperature T2 by heat generated due to the short-circuit failure when the short-circuit failure occurs is used for at least one of a pair of electrodes in a light-emitting element, and a layer containing an organic composition which is melted at temperature T1 is formed on a surface of the electrode opposite to a surface facing the other electrode. The present inventors have reached a structure in which the temperature T2 is lower than temperature T3 at which the light-emitting element is damaged and the temperature T1 is lower than the temperature T2, and this structure can achieve the objects.

Abstract: An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.

Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, masking portions of each fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

Abstract: An IR source in the form of a micro-hotplate device including a CMOS metal layer made of at least one layer of embedded on a dielectric membrane supported by a silicon substrate. The device is formed in a CMOS process followed by a back etching step. The IR source also can be in the form of an array of small membranes —closely packed as a result of the use of the deep reactive ion etching technique and having better mechanical stability due to the small size of each membrane while maintaining the same total IR emission level. SOI technology can be used to allow high ambient temperature and allow the integration of a temperature sensor, preferably in the form of a diode or a bipolar transistor right below the IR source.

Abstract: A spin filter includes a first electrode configured to be formed with a zigzag graphene ribbon with an even number of rows extending in a first direction, and to have a magnetic moment in a second direction crossing with the first direction; a second electrode configured to be formed with a zigzag graphene ribbon with an even number of rows extending in the first direction, and to have a magnetic moment in the second direction; and a channel region configured to be placed between the first electrode and the second electrode, and to have an energy level allowing up-spin electrons or down-spin electrons to pass.

Abstract: A semiconductor light-emitting device has a first principal surface, a second principal surface formed on a side opposite to the first principal surface, and a light-emitting layer. A p-electrode on the second principal surface is in the region of the light-emitting layer and surrounds an n-electrode. An insulating layer on the side of the semiconductor layer surrounds the p-and the n-electrodes. A p-metal pillar creates an electrical connection for the p-electrode, and an n-metal pillar creates an electrical connection for the n-electrode. A resin layer surrounds the end portions of the p-and the n-metal pillars, and also covers the side surface of the semiconductor layer, the second principal surface, the p-electrode, the n-electrode, the insulating layer, the p-metal pillar and the n-metal pillar.

Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode. A method of fabricating a semiconductor light emitting device, and which includes forming a light emitting layer on the first type semiconductor layer; forming a second type semiconductor layer on the light emitting layer; forming a first transparent electrode on the second type semiconductor layer, the first transparent electrode having holes per a certain region to thereby expose the second type semiconductor layer; forming a second transparent electrode on the first transparent electrode; forming a first pad on the second transparent electrode; and forming a second pad over the first type semiconductor layer.