Dielectric Regions, E.g., Epic Dielectric Isolation, Locos; Trench Refilling Techniques, Soi Technology, Use Of Channel Stoppers (epo) Patents (Class 257/E21.545)
- Dielectric material being obtained by full chemical transformation of nondielectric materials, such as polycrystalline silicon, metals (EPO) (Class 257/E21.547)
- Concurrent filling of plurality of trenches having different trench shape or dimension, e.g., rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches (EPO) (Class 257/E21.548)
- Of trenches having shape other than rectangular or V shape, e.g., rounded corners, oblique or rounded trench walls (EPO) (Class 257/E21.549)
- Introducing impurities in trench side or bottom walls, e.g., for forming channel stoppers or alter isolation behavior (EPO) (Class 257/E21.551)
- In region recessed from surface, e.g., in recess, groove, tub or trench region (EPO) (Class 257/E21.553)
- Introducing electrical inactive or active impurities in local oxidation region, e.g., to alter LOCOS oxide growth characteristics or for additional isolation purpose (EPO) (Class 257/E21.556)
- With plurality of successive local oxidation steps (EPO) (Class 257/E21.559)
- Using selective deposition of single crystal silicon, e.g., Selective Epitaxial Growth (SEG) (EPO) (Class 257/E21.562)
- Using silicon implanted buried insulating layers, e.g., oxide layers, i.e., SIMOX technique (EPO) (Class 257/E21.563)
- SOI together with lateral isolation, e.g., using local oxidation of silicon, or dielectric or polycrystalline material refilled trench or air gap isolation regions, e.g., completely isolated semiconductor islands (EPO) (Class 257/E21.564)
- Using full isolation by porous oxide silicon, i.e., FIPOS technique (EPO) (Class 257/E21.565)
- Using lateral overgrowth technique, i.e., ELO techniques (EPO) (Class 257/E21.566)
- Using bonding technique (EPO) (Class 257/E21.567)