Abstract: Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced.

Abstract: The present invention provides a thin film transistor realizing improved reliability by suppressing deterioration in electric characteristics. The thin film transistor includes an oxide semiconductor film forming a channel; a gate electrode disposed on one side of the oxide semiconductor film via a gate insulating film; and a pair of electrodes formed as a source electrode and a drain electrode in contact with the oxide semiconductor film and obtained by stacking at least first and second metal layers in order from the side of the oxide semiconductor film The first metal layer is made of a metal having ionization energy equal to or higher than molybdenum (Mo), a metal having oxygen barrier property, or a nitride or a silicon nitride of the metal having oxygen barrier property.

Abstract: This application discloses a light-emitting device comprising a light-emitting stack layer, a first transparent conductive layer disposed below the light-emitting stack layer, a transparent dielectric barrier layer disposed below the first transparent conductive layer, a second transparent conductive layer disposed below the transparent dielectric barrier layer and a metal reflective layer disposed below the second transparent conductive layer wherein an omni-directional reflector (ODR) comprises the metal reflective layer and the second transparent conductive layer. Besides, the first transparent conductive layer is ohmically connected with the light-emitting stack layer.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.

Abstract: Embodiments relate to a semiconductor light-emitting structure. The semiconductor light-emitting structure according to embodiments comprises a plurality of compound semiconductor layers; a current spreading layer comprising a multi-layered transparent electrode layer on the plurality of compound semiconductor layers and a metal layer between the transparent electrode layers; and a second electrode electrically connected to the current spreading layer.

Abstract: Light emitting systems and method of fabricating the same are disclosed. The light emitting system includes two or more monolithically integrated luminescent elements. Each luminescent element includes an electroluminescent device and a dedicated switching circuit for driving the electroluminescent device. At least one luminescent element includes a potential well for down converting light emitted by the electroluminescent device in the luminescent element.

Abstract: The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same. In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Abstract: A semiconductor light emitting device includes a silicon substrate, a p-type semiconductor layer provided on the silicon substrate, a n-type semiconductor layer provided on the silicon substrate, the n-type semiconductor layer adjoining the p-type semiconductor layer, and a light emitting section formed at a p-n homojunction between the p-type semiconductor layer and the n-type semiconductor layer. The p-n homojunction is substantially perpendicular to a major surface of the silicon substrate. The p-n homojunction is corrugated with a period matched with an integer multiple of an emission wavelength at the light emitting section.

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad under the plurality of compound semiconductor layers; an electrode layer on the plurality of compound semiconductor layers; and a shock supporting member disposed on the plurality of compound semiconductor layers and corresponding to the pad.

Abstract: In an organic electroluminescence device having a pair of electrodes and an organic medium which has a light emitting layer or a plurality of layers including the light emitting layer, contains a light emitting material formed with an organometallic complex compound having a heavy metal and is disposed between the pair of electrodes, the organic medium contains an amine derivative having a specific structure. The organic electroluminescence device exhibits a high efficiency of light emission even at a high luminance of several thousand cd/m2 or greater and a small consumption of electricity.

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 ?m. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Abstract: A source gas flows through a flow channel 23 of a metal-organic vapor phase epitaxy reactor 21. The source gas is fed in a direction across a main surface 25a of a susceptor 25. GaN substrates 27a to 27c are placed on the susceptor main surface 25a. An off-angle monotonically varies on a line segment extending from one point on the edges of the main surfaces of the gallium nitride substrates 27a to 27c to another point on the edges. The orientations of the GaN substrates 27a to 27c are represented by the orientations of the orientation flats. By placing the plurality of gallium nitride substrates 27a to 27c on the susceptors 25 of the metal-organic vapor phase epitaxy reactor 21 in these orientations, the influence of the off-angle distribution can be reduced by using the influence originated from the flow of the source gas.

Abstract: In one embodiment, a method of producing an optoelectronic nanostructure includes preparing a substrate; providing a quantum well layer on the substrate; etching a volume of the substrate to produce a photonic crystal. The quantum dots are produced at multiple intersections of the quantum well layer within the photonic crystal. Multiple quantum well layers may also be provided so as to form multiple vertically aligned quantum dots. In another embodiment, an optoelectronic nanostructure includes a photonic crystal having a plurality of voids and interconnecting veins; a plurality of quantum dots arranged between the plurality of voids, wherein an electrical connection is provided to one or more of the plurality of quantum dots through an associated interconnecting vein.

Abstract: A method for manufacturing a nitride semiconductor laser device with suppression of deterioration of the yield and good light emission characteristic. The method comprises a step of forming nitride semiconductor layers on an n-type GaN substrate, a step of forming a ridge composed of a p-type clad layer and a contact layer and extending in the [1-100] direction, a step of forming a trench made in the top surface of the n-type GaN substrate by applying a YAG laser beam and extending in the direction ([11-20] direction) perpendicular to the ridge, and a step of forming end surfaces of a resonator by dividing the n-type GaN substrate from the trench. The step of forming a trench includes a substep of forming the end of the trench in a region a predetermined distance W2 (about 50 ?m to about 200 ?m) apart from the side face of the ridge.

Abstract: A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer.

Abstract: A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.

Abstract: A nitride based semiconductor light emitting device is revealed. The light emitting device includes a light emitting epitaxial layer, a P-type electrode and a N-type electrode. The P-type electrode and the N-type electrode are disposed on the light emitting epitaxial layer. The light emitting device features on that the N-type electrode is arranged on the inner side of the P-type electrode. The P-type electrode extends toward the N-type electrode along the edge of the light emitting epitaxial layer and the N-type electrode extends inward along the inner side of the P-type electrode. By means of the electrode pattern with special design, the light emitting area of the light emitting device is increased.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

Abstract: A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Abstract: Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.

Abstract: To provide a structure suitable for a common connection portion provided in a display panel. A common connection portion provided in an outer region of a pixel portion has a stacked structure of an insulating layer formed using the same layer as a gate insulating layer, an oxide semiconductor layer formed using the same layer as a second oxide semiconductor layer, and a conductive layer (also referred to as a common potential line) formed using the same layer as the conductive layer, in which the conductive layer (also referred to as the common potential line) is connected to a common electrode through an opening in an interlayer insulating layer provided over the first oxide semiconductor layer and an electrode opposite to a pixel electrode is electrically connected to the common electrode through conductive particles.

Abstract: In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting.

Abstract: Disclosed are layers and patterns of nanowire or nanotube using a chemical self assembly for forming a semiconductor layer and a conductive layer of a thin film transistor by using a nanowire and/or nanotube solution and an diamine-based self-assembled monolayer (SAM) material. The Layers and patterns including layers and patterns of nanowire or nanotube using a chemical self assembly include: a substrate having a surface terminated with amine group (—NH2) by using a chemical self-assembled monolayer (SAM) material having at least one end terminated with amine group (—NH2); and a first nanowire or nanotube layer ionically coupled to the amine group (—NH2) of the surface of the substrate.

Abstract: A system for displaying images and fabricating method thereof are provided. The system includes a thin film transistor substrate including a substrate having a display area and a pad area. The thin film transistor substrate further includes a conductive line disposed on the substrate in the display area. The conductive line includes a lower metal line, an upper metal line and a middle metal line therebetween. The width of the middle metal line is narrower than that of the upper metal line.

Abstract: A nitride-based semiconductor device includes an n-type nitride-based semiconductor layer, and an n-side electrode having a first metal layer made of Al, formed on a surface of the n-type nitride-based semiconductor layer and a second metal layer made of Hf formed so as to cover a surface of the first metal layer on a side opposite to the n-type nitride-based semiconductor layer.

Abstract: Disclosed herein is a method for preparing nanocrystal-metal oxide composites with long-term stability in a simple and easy manner. Also disclosed herein are nanocrystal-metal oxide composites with high luminescence efficiency and uniform emission wavelengths. Also disclosed herein is a light-emitting device using the composites.

Abstract: Disclosed is a nitride semiconductor light-emitting device, including a substrate, a nitride semiconductor layer including a first conductive layer, an active layer and a second conductive layer located on the substrate, a first electrode formed on the first conductive layer, and a second electrode formed on the second conductive layer, wherein a pattern having one or more protrusions formed at a predetermined interval and concave portions resulting from depression of upper surfaces of the protrusions to a predetermined depth is formed on the surface of the substrate which abuts with the first conductive layer. A method of fabricating the nitride semiconductor light-emitting device is also provided. When the substrate having a pattern with protrusions and concave portions is used, higher light extraction efficiency can be obtained.

Abstract: A method of manufacturing a light emitting device is provided. An epitaxial layer is first formed at a plurality of separated regions on a substrate and a second electrode layer is formed on the epitaxial layer. Subsequently, the substrate is removed from the epitaxial layer and a first electrode layer is formed under the epitaxial layer, after which the second electrode layer is divided into chip units.

Abstract: The invention provides a thin film field-effect transistor including, on a substrate, a gate electrode, a gate insulating film, an active layer including an oxide semiconductor, a source electrode, a drain electrode, a resistive layer including an oxide semiconductor and positioned between the active layer and at least one of the source electrode or the drain electrode, the resistive layer having an electric conductivity that is lower than the electric conductivity of the active layer, the electric conductivity of the active layer being from 10?4 Scm?1 to less than 102 Scm?1, the ratio of the electric conductivity of the active layer to the electric conductivity of the resistive layer (electric conductivity of active layer/electric conductivity of resistive layer) being from 101 to 1010, and at least one of the source electrode or the drain electrode including a layer including Ti or a Ti alloy positioned at the side facing the resistive layer.

Abstract: In silicon-carbide based light emitting diodes (LEDs) and other similar applications, diamond crystals are used to provide an intermediate refractive index that permits more of the ultraviolet light generated in the diode to reach the phosphors, producing a brighter light with greater efficiency.

Abstract: An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×10?5 mm3 conductively joined to the submount, a first ohmic contact on the bond pad opposite from the submount, an epitaxial region comprising at least a p-type layer and an n-type layer on the first ohmic contact, and an electrode to the epitaxial region opposite from the first ohmic contact.

Abstract: A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.

Abstract: This invention generally relates to improved methods of fabricating molecular electronic devices, in particular organic electronic devices such as organic light emitting diodes (OLEDs) by droplet deposition techniques such as ink jet printing. The invention also relates to molecular device substrates fabricated by and/or use in such methods. We describe an optical or optoelectronic device comprising a substrate and a plurality of discrete bank structures disposed on the substrate, wherein: each bank structure defines the perimeter of at least one well; one or more of a charge transporting, charge injecting, light-filtering and light-emitting material is disposed in the well; and at least one bank structure defines the perimeter of at least one well and does not extend to the perimeter of any adjacent well. Thus in embodiments no part of said perimeter defines the bank of more than one well.

Abstract: To provide a display device which can be manufactured with higher efficiency in the use of material through a simplified manufacturing process, and a method for manufacturing the display device. Another object is to provide a technique by which patterns of a wiring the like which constitutes the display device can be formed to a desired shape with good control. In a method for forming a pattern according to the present invention, a mask is formed over a light-transmitting substrate; a first region including a photocatalyst is formed over the substrate and the mask; the photocatalyst is irradiated with light through the substrate to modify a part of the first region; a second region is formed; and a composition containing a pattern forming material is discharged to the second region, thus, a pattern is formed. The mask does not transmit light.

Abstract: Disclosed is a light-emitting element having a light-emitting layer which includes a first layer, a second layer, and a third layer provided in this order on an anode side between the anode and a cathode. The first layer has a hole-transporting property, the second layer has a bipolar property, and the third layer has an electron-transporting property, wherein the first layer contains a first fluorescent compound and a hole-transporting organic compound, the second layer contains a phosphorescent compound and a host material, and the third layer contains a second fluorescent compound and an electron-transporting organic compound. The light-emitting layer is also arranged so that the triplet-excitation energy of both the hole-transporting organic compound and the electron-transporting organic compound are greater than that of the host material.

Abstract: There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm.

Abstract: Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The high-quality layered semiconductor device can be formed using various materials systems and can be incorporated into various opto-electronic and electronic devices. In an exemplary embodiment, an emitter device can include monolithic quantum well (QW) lasers directly disposed on a SOI or silicon substrate for waveguide coupled integration. In another exemplary embodiment, a superlattice (SL) photodetector and its focal plane array can include a III-Sb active region formed over a large GaAs substrate using SLS technologies.

Abstract: Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

Abstract: A n-type layer, a multiquantum well active layer comprising a plurality of pairs of an InGaN well layer/InGaN barrier layer, and a p-type layer are laminated on a substrate to provide a nitride semiconductor light emitting element. A composition of the InGaN barrier included in the multiquantum well active layer is expressed by InxGa1-xN (0.04?x?0.1), and a total thickness of InGaN layers comprising an In composition ratio within a range of 0.04 to 0.1 in the light emitting element including the InGaN barrier layers is not greater than 60 nm.

Abstract: An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.

Abstract: In the particles for display media used for an information display panel, in which at least one group of display media are sealed between two opposed substrates, at least one of two substrates being transparent, and, in which the display media, to which an electrostatic field is applied, are made to move so as to display information such as an image, a material having electric properties of a semiconductor is provided on a surface of the particles. According to the invention, since use is made of the particle whose surface has electric properties of a semiconductor, it is possible to maintain stably a surface charge of the particle for display media. As a result, it is possible to obtain an information display panel having a stable information display state such as an image.

Abstract: In the present invention, an electron injection composition for a light-emitting element, comprising a pyridine derivative represented by general formula 1 and at least one of an alkali metal, an alkali earth metal, and a transition metal, is used to form an electron injection layer in a portion of a layer including luminescent material in a light-emitting element, and it is also an object of the present invention to provide, by using the composition, a light-emitting element that has more superior characteristics and a longer lifetime as compared to conventional ones, where each of X1 and X2 represents: (where each of R1 to R8 represents hydrogen, halogen, a cyano group, an alkyl group having 1 to 10 carbon atoms, a haloalkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group).

Abstract: The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.

Abstract: The light emitting device of the invention includes a first electrode, a second electrode, and a carrier formed between the first electrode and the second electrode and containing germanium light emitters, wherein the germanium light emitters contain germanium oxide in which at least part of the germanium oxide has oxygen deficiency and have a wavelength peak of emission in both or either the range of 250 to 350 nm and/or the range of 350 to 500 nm when a potential difference is applied to the first electrode and the second electrode.

Abstract: An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.