Abstract: Disclosed are a carbon nano-tube (CNT) light emitting device and a method of manufacturing the same. Specifically, the CNT light emitting device comprises: a CNT thin film formed using a CNT dispersed solution; a n-doping polymer formed on one end of the CNT thin film; a p-doping polymer formed on the other end of the CNT thin film; and a light emitting part between the n-doping polymer and the p-doping polymer. In addition, the method of manufacturing a CNT light emitting device comprises steps of: mixing CNTs with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; forming a CNT thin film using the CNT dispersed solution; coating a n-doping polymer on one end of the CNT thin film; and coating a p-doping polymer on the other end of the CNT thin film.

Abstract: A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.

Abstract: An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).

Abstract: A liquid crystal display includes; a first substrate, a gate line disposed on the first substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, an interlayer insulating layer disposed on the pixel electrode, a common electrode disposed on the interlayer insulating layer and including a plurality of electrically connected common electrode lines extending substantially parallel to each other, a second substrate disposed substantially opposite to the first substrate, a reference electrode disposed on substantially an entire surface of the second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate, and having negative dielectric anisotropy.

Abstract: An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.

Abstract: Disclosed is a light emitting device including a conductive substrate; a reflective layer on the conductive substrate; an etching protective layer on a peripheral portion of a top surface of the conductive substrate; and a light emitting structure, which is formed on the reflective layer and the etching protective layer such that the etching protective layer is partially exposed and includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers, wherein the etching protective layer includes a first refractive layer having a first refractive index and a second refractive layer having a second refractive index greater than the first refractive index.

Abstract: The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.

Abstract: A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.

Abstract: A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.

Abstract: A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn1?a?b?cMgaCdbBecO1?p?qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1.

Abstract: Provided are a light emitting device, a light emitting device package and a lighting system including the same. The light emitting device (LED) comprises a substrate, a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer and a first electrode. The vertical distances between the first conductive type semiconductor layer and the second conductive type semiconductor layer are varied.

Abstract: A buffer layer 12 composed of at least a Group III nitride compound is laminated on a substrate 11 composed of sapphire, and an n-type semiconductor layer 14, a light-emitting layer 15, and a p-type semiconductor layer 16 are laminated in a sequential manner on the buffer layer 12. The buffer layer 12 is formed by means of a reactive sputtering method, the buffer layer 12 contains oxygen, and the oxygen concentration in the buffer layer 12 is 1 atomic percent or lower. There are provided a Group III nitride compound semiconductor light-emitting device that comprises the buffer layer formed on the substrate by means of the reactive sputtering method, enables formation of a Group III nitride semiconductor having favorable crystallinity thereon, and has a superior light emission property, and a manufacturing method thereof, and a lamp.

Abstract: A method for continuously growing carbon nanotubes may include providing a melt comprising carbon and a catalyst at a temperature between about 1,200 degrees Celsius and about 2,500 degrees Celsius, selecting a carbon nanotube seed having at least one of a semiconductor electrical property and a metallic electrical property from a plurality of carbon nanotube seeds, contacting the selected carbon nanotube seed to a surface of the melt, and moving the selected carbon nanotube seed away from the surface of the melt at a rate operable to continuously grow a carbon nanotube, and continuously growing the carbon nanotube having the selected electrical property. Method for continuously growing a graphene sheet, and apparatus for continuously growing carbon nanotubes and graphene sheets are also disclosed.

Abstract: A method for producing a metal oxide structure, including: forming a layer containing metal acetate hydrate on a sapphire substrate; subjecting the layer containing the metal acetate hydrate to an insolubilization treatment; and immersing the sapphire substrate having the insolubilized layer in a reaction solution containing a metal ion and an NH4+ ion, so as to grow rod-shaped crystals each containing metal oxide as a main substance thereof.

Abstract: A light emitting apparatus may include a gate metal positioned between a p-type contact and an n-type contact, a gate oxide or other dielectric stack positioned below and attached to the gate metal, a Ge or Si1-zGez channel positioned below and attached to the gate dielectric stack, a buffer, and a silicon substrate positioned below and attached to the buffer. The light emitting apparatus may alternatively include a gate metal positioned between a p-type contact and an n-type contact, a wide bandgap semiconductor positioned below and attached to the gate metal, a Ge or Si1-zGez channel positioned below and attached to the wide bandgap semiconductor, a buffer, and a silicon substrate positioned below and attached to the buffer. Embodiments of the light emitting apparatus may be configured for use in current-injected on-chip lasers, light emitting diodes or other light emitting devices.

Abstract: An ultra-violet light-emitting device and method for fabricating an ultraviolet light emitting device, 12, (LED or an LD) with an AlInGaN multiple-quantum-well active region, 10, exhibiting stable cw-powers. The device includes a non c-plane template with an ultraviolet light-emitting structure thereon. The template includes a first buffer layer, 321, on a substrate, 100, then a second buffer layer, 421, on the first preferably with a strain-relieving layer, 302, in both buffer layers. Next there is a semi-conductor layer having a first type of conductivity, 500, followed by a layer providing a quantum-well region, 600. Another semi-conductor layer, 700, having a second type of conductivity is applied next. Two metal contacts, 980 and 990, are applied to this construction, one to the semiconductor layer having the first type of conductivity and the other to the semiconductor layer having the second type of conductivity, to complete the light emitting device.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells. The light emitting device comprises a thermally conductive substrate, such as a SiC substrate, having a thermal conductivity higher than that of a sapphire substrate. The plurality of light emitting cells are connected in series on the thermally conductive substrate. Meanwhile, a semi-insulating buffer layer is interposed between the thermally conductive substrate and the light emitting cells. For example, the semi-insulating buffer layer may be formed of AlN or semi-insulating GaN. Since the thermally conductive substrate having a thermal conductivity higher than that of a sapphire substrate is employed, heat-dissipating performance can be enhanced as compared with a conventional sapphire substrate, thereby increasing the maximum light output of a light emitting device that is driven under a high voltage AC power source.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device comprises a plurality of compound semiconductor layers, an electrode layer, and a conductive support member. The compound semiconductor layers comprise a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. The electrode layer is disposed under the compound semiconductor layers. The conductive support member is disposed under the electrode layer. Herein, the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer.

Abstract: A light emitting device comprises a novel low-loss array of conductive vias embedded in a dielectric multilayer stack, to act as an electrically-conductive, low-loss, high-reflectivity reflector layer (CVMR). In one example the CVMR stack is employed between a reflective metal bottom contact and a p-GaN semiconductor flip chip layer. The CVMR stack comprises at least (3) layers with at least (2) differing dielectric constants. The conductive vias are arranged such that localised and propagating surface plasmons associated with the structure reside within the electromagnetic stopband of the CVMR stack, which in turn inhibits trapped LED modes coupling into these plasmonic modes, thereby increasing the overall reflectivity of the CVM R. This technique improves optical light extraction and provides a vertical conduction path for optimal current spreading in a semiconductor light emitting device. A light emitting module and method of manufacture are also described.

Abstract: A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.

Abstract: Provided are a semiconductor device, a semiconductor device manufacturing method, a high carrier mobility transistor and a light emitting device. The semiconductor device is provided with a semiconductor layer including N and Ga, a conductive layer ohmic-connected to the semiconductor layer, a metal-distributed region where metal exists by being distributed at an interface between the semiconductor layer and the conductive layer, and a metal intrusion region where the atoms of the metal exist by entering the semiconductor layer.

Abstract: Visible and infrared light sources on silicon that have several attractive properties with respect to integrated optics. First, the devices are operational at room temperature and strictly require no thermal processing in their synthesis (although low temperature annealing can be used to form Ohmic contacts). These devices could therefore be included at any stage of chip fabrication. The special ease of synthesis of these silicon LEDs enables simple fabrication of surface structures such as patterned emitters and photonic crystal surfaces that enhance light emission in the forward direction. The LEDs are color-switchable—by reversing the current one can switch from infrared emission to visible emission. The lifetime of the luminescence is much shorter than the standard carrier recombination time in silicon, suggesting direct modulation of the emitted light.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer below the first conductive semiconductor layer, and a second conductive semiconductor layer below the active layer; a channel layer below the light emitting structure, in which an inner portion of the channel layer is disposed along an outer peripheral portion of the light emitting structure and an outer portion of the channel layer extends out of the light emitting structure; and a second electrode layer below the light emitting structure.

Abstract: Disclosed is a method of manufacturing a semiconductor light emitting device. The method includes forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate, forming an electrode layer on the light emitting structure, forming a conductive support member on the electrode layer, and planarizing a top surface of the conductive support member.

Abstract: A method of forming an organic layer by using a liquid composition comprising a small molecule organic semiconductor material mixed in a ketone solvent. The liquid composition is deposited on a surface to form the organic layer. The ketone solvent may be an aromatic ketone solvent, such as a tetralone solvent. The organic semiconductor material may be cross-linkable to provide a cross-linked organic layer. The method can be used to make organic electronic devices, such as organic light emitting devices. In another aspect, the liquid composition comprises a small molecule organic semiconductor material mixed in an aromatic ether solvent. Also, provided are liquid compositions which can be used to make organic layers.

Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

Abstract: A graphene-on-oxide substrate according to the present invention includes: a substrate having a metal oxide layer formed on its surface; and, formed on the metal oxide layer, a graphene layer including at least one atomic layer of the graphene. The graphene layer is grown generally parallel to the surface of the metal oxide layer, and the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.34 nm or less. Preferably, the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.

Abstract: A method for manufacturing a light emitting device according to the present invention has the steps of: preparing a first member which has an emission layer on a substrate having a compound semiconductor layer through an etch stop layer and a sacrifice layer; forming a bonded structure by bonding the first member on a second member including a silicon layer so that the emission layer is positioned in the inner side; providing a through groove in the substrate so that the etch stop layer is exposed, by etching the first member from the reverse side of the emission layer; and removing the substrate having the through groove provided therein from the bonded structure by etching the sacrifice layer.

Abstract: An organic light emitting diode display with first and second substrates, and a method of manufacturing the organic light emitting diode display. The first substrate has a plurality of first organic light emitting diodes each having a first emissive area and a first non-emissive area, and a first driving circuit unit for driving the first organic light emitting diodes. The second substrate has a plurality of second organic light emitting diodes each having a second emissive area and a second non-emissive area, and a second driving circuit unit for driving the second organic light emitting diodes. The first emissive areas of the first organic light emitting diodes face the second non-emissive areas of the second organic light emitting diodes, respectively, and the second emissive areas of the second organic light emitting diodes face the first nonemissive area of the first organic light emitting diodes, respectively.

Abstract: In a preferred embodiment, a light emitting device comprising: a polar template; a p-type layer grown on the polar template; the p-type layer having a first polarization vector; the first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector; the second polarization vector having a second projection relative to said growth direction that is larger than the first projection of the first polarization vector for the p-type layer; the n-type layer and p-type layer forming an interface; whereby the first polarization vector in the p-layer and second polarization vector in the n-layer create a discontinuity at the interface resulting in a negative charge appearing at the interface.

Abstract: There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element 1 formed by laminating a compound semiconductor layer 3 on a single crystal substrate, and dividing the single crystal substrate into pieces, the side faces 21 to 24 of each of substrate pieces 2 as the divided single crystal substrate are formed such that the side face 21 used as the reference of the substrate piece 2 forms an angle of 15° with respect to the (1-100) plane, and that the side faces 21 to 24 are formed of planes different from cleaved planes of a crystalline structure in the single crystal substrate.

Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a nitride semiconductor layer on an outer periphery of the second conductive semiconductor layer; and an ohmic layer on the second conductive semiconductor layer.

Abstract: An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a pn junction. Alternately, an LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%. The Type II interfaces may include interfaces from a layer which is an electron quantum well and not a hole quantum well, interfaces to a layer which is a hole quantum well and not an electron quantum well; and interfaces that satisfy both conditions simultaneously. The Type II interfaces may be within a pn or pin junction or not within a pn or pin junction. In the later case, emission from the Type II interfaces may be photopumped by a nearby light source. The LED may be a white or near-white light LED.

Abstract: A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).

Abstract: A light-emitting element includes a first electrode, a first light-emitting layer formed over the first electrode, a second light-emitting layer formed on and in contact with the first light-emitting layer to be in contact therewith, and a second electrode formed over the second light-emitting layer. The first light-emitting layer includes a first light-emitting substance and a hole-transporting organic compound, and the second light-emitting layer includes a second light-emitting substance and an electron-transporting organic compound. Substances are selected such that a difference in LUMO levels between the first light-emitting substance, the second light-emitting substance, and the electron-transporting organic compound is 0.2 eV or less, a difference in HOMO levels between the hole-transporting organic compound, the first light-emitting substance, and the second light-emitting substance is 0.

Abstract: A CMOS thin film transistor arrangement including a PMOS poly-silicon thin film transistor having a top gate configuration and a NMOS oxide thin film transistor having an inverted staggered bottom gate configuration where both transistors share the same gate electrode. The shared gate electrode is used as a doping or implantation mask in the formation of the source and drain regions of the poly-silicon transistor.

Abstract: The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.

Abstract: The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.

Abstract: A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

Abstract: In a nitride semiconductor light emitting element, a light transmitting substrate has an upper surface on which a nitride semiconductor layer including at least a light emitting layer is formed. On the upper surface of the light transmitting substrate, recess regions and rise regions are formed. One of each of the recess regions and each of the rise regions is formed by a polygon having at least one apex having an interior angle of 180° or greater when viewed in a planar view. The other of each of the recess regions and each of the rise regions is formed not to be connected to one another in a straight line when viewed in a planar view. A nitride semiconductor light emitting element having such a configuration has excellent light extraction efficiency and can be manufactured at a moderate cost.

Abstract: The present invention provides a light-emitting diode (10) including a substrate (101) made of a first conductive type silicon (Si) single crystal, a pn junction structured light-emitting section (40) composed of a III-group nitride semiconductor on the substrate, a first polarity ohmic electrode (107a) for the first conductive type semiconductor provided on the light-emitting section (40) and a second polarity ohmic electrode (108) for a second conductive type semiconductor on the same side as the light-emitting section (40) with respect to the substrate (101), wherein a second pn junction structure (30) is provided which is made up of a pn junction between the first conductive type semiconductor layer (102) and the second conductive type semiconductor layer (103) which is different from the pn junction structure of the light-emitting section (10).

Abstract: To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH3-rich condition. The TMAl pulsed supply sequence includes growing an AlGaN layer for 10 seconds, interrupting the growth for 5 seconds to remove NH3, and then introducing TMAl at a flow rate of 1 sccm for 5 seconds. After that, the growth is interrupted again for 5 seconds. Defining this sequence as one growth cycle, five growth cycles are carried out. By such growth, an AlGaN layer having a polarity of richness in Al can be obtained. The above sequence is described only for illustrative purposes, and various variations are possible. In general, the Al polarity can be achieved by a process of repeating both growth interruption and supply of an Al source.

Abstract: The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Abstract: A light-emitting device, such as a light-emitting diode (LED), is grown on a substrate including a ZnO-based material. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device is removed from the substrate or the substrate is substantially thinned to improve light emission efficiency of the device.

Abstract: The present invention discloses a high-efficiency lighting device and a method for fabricating the same. The method of the present invention comprises steps: providing an insulation substrate and sequentially forming an electrode layer and a seed layer on the insulation layer; forming a plurality of zinc oxide micro and nano structures and a plurality of first insulation units on the seed layer, wherein each zinc oxide micro and nano structure is arranged between two neighboring first insulation units; forming a nitride layer on the side wall of each zinc oxide micro and nano structure; and forming an electrode layer on each nitride layer. The present invention achieves a high-efficiency lighting device via growing nitride layers on the side walls of zinc oxide micro and nano structures. Further, the present invention can reduce the fabrication cost.

Abstract: The present invention relates to a white organic light emitting device and a method for manufacturing the same, in which a hole transport layer is made to have an energy level higher than an energy level of an excited state of a phosphorescent light emitting layer adjacent thereto for enhancing light emitting efficiency of the hole transport layer without an additional exciton blocking layer, and a dopant content in the phosphorescent light emitting layer is adjusted for preventing color shift from taking place.

Abstract: An object is to provide a light-emitting element which exhibits light emission with high luminance and can be driven at low voltage. Another object is to provide a light-emitting device or an electronic device with reduced power consumption. Between an anode and a cathode, n (n is a natural number of two or more) EL layers are provided, where between a first EL layer and a second EL layer, a first layer containing any of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, and a rare earth metal compound, a second layer containing a material having a high electron-transporting property in contact with the first layer, and a region containing a material having a high hole-transporting property and an acceptor material in contact with the second layer are provided in this order from the anode side.

Abstract: There is provided a compound semiconductor light emitting device capable of optimizing strain applied to an active layer and a clad layer to minimize a piezoelectric field and spontaneous polarization in an active layer and to maximize light emission efficiency. In a compound semiconductor light emitting device having a structure in which a buffer layer, a first clad layer, an active layer, and a second clad layer arc sequentially deposited, a strain induction layer and a strain control layer intersect at least once and are deposited between the buffer layer and the first clad layer, the strain induction layer performs induction so that compressive strain to be applied to the active layer is dispersed to the strain control layer, and the compressive strain applied to the active layer is reduced as the compressive strain is applied to the strain control layer.

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.