Gating (i.e., Switching Input To Output) Patents (Class 327/365)
- Preventing quick rise gating current (i.e., di/dt) (Class 327/380)
- Preventing quick rise gating voltage (i.e., dv/dt) (Class 327/381)
- Parasitic prevention or compensation (e.g., parasitic capacitance, etc.) (Class 327/382)
- Ensuring fully conducting state (Class 327/383)
- Switch noise signal (Class 327/384)
- Control signal derived from or responsive to input signal (Class 327/387)
- Insulated gate FET (e.g., MOSFET, etc.) (Class 327/389)
- With variable or multiple adjustable time of delay control (e.g., variable charge-discharge, on-delay/off-delay control, etc.) (Class 327/393)
- For predetermined time period (Class 327/398)
- With field-effect device (Class 327/399)
- Propagation through plural delay devices or paths (Class 327/400)
- With plural switching elements (e.g., sequential, etc.) (Class 327/401)
- Including negative resistance device in delay circuit (e.g., unijunction transistor, etc.) (Class 327/402)
- Breakdown characteristic (e.g., punch-through, tunneling, etc.) (Class 327/420)
- Bridge circuit (Class 327/423)
- Bilateral transistor (Class 327/425)
- Field-effect transistor (Class 327/427)
- Four or more layer device (e.g., thyristor, etc.) (Class 327/438)
- Unijunction transistor (UJT) (Class 327/477)
- Bipolar transistor (Class 327/478)