Abstract: Embodiments of the present disclosure provide a color film substrate, a liquid crystal display panel and a liquid crystal display, wherein the color film substrate includes a base substrate and a photoresist layer formed on the base substrate, the photoresist layer includes a plurality of recess parts, each of the plurality of recess parts has an opening facing away from the base substrate and a lateral surface with a step structure, and an orthographic projection of the opening of each of the plurality of recess parts onto the base substrate overlaps with an orthographic projection of a bottom of each of the plurality of recess parts onto the base substrate.

Abstract: A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 1011 cm?3 when an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 1011 cm?3, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.

Abstract: To manufacture a display using light emitting diodes (LEDs), the LEDs are transferred from fabrication substrates where they are fabricated to a target substrate (e.g., a backplane) that forms part of a display. The LEDs are transferred in three stages: first from fabrication substrates to hard handles, subsequently from the hard handles to a carrier substrate, and last from the carrier substrate to the target substrate. The LEDs are placed onto the carrier substrate to form pixel arrangements. One or more pick-up tools are used to transfer the LEDs. Switchable adhesives are used to facilitate the transfer of the LEDs from the fabrication substrates to the target substrate.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: A method for forming a light-transmissive member includes irradiating a principal surface of a cured resin body containing a silicone resin with ultraviolet rays through a photomask comprising one or more light-blocking regions and one or more light-transmissive regions, so as to cause a height of one or more first regions of the principal surface, which correspond to the one or more light-blocking regions of the photomask, to be different than a height of one or more second regions of the principal surface, which correspond to the one or more light-transmissive regions of the photomask.

Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.

Abstract: A light emitting diode (LED) includes an elastomeric material that facilitates adhesive attachment with a pick-up head for pick and place operations. The LED includes an epitaxial layer defining a mesa structure and a light emitting surface. The mesa structure includes an active layer to emit light, and the emitted light is reflected at the mesa structure toward a light emitting region of the light emitting surface and transmitted at the light emitting region. An elastomeric material is on a portion of the light emitting surface, such as the light emitting region or a passive region. At the light emitting region, the elastomeric material may be shaped as a lens that collimates light transmitted from the light emitting region, and also facilitates adhesion to the pick-up head. At the passive region, the elastomeric material facilitates adhesion to the pick-up head without interfering with light emitted from the light emitting region.

Abstract: A method comprises: arranging a plurality of semiconductor chips above a carrier, wherein active main surfaces of the semiconductor chips face the carrier; filling a cavity with a molding material; pressing the semiconductor chips arranged on the carrier into the molding material; and separating the molding material with the semiconductor chips embedded therein from the carrier, wherein main surfaces of the semiconductor chips that are situated opposite the active main surfaces are covered by the molding material.

Abstract: The present application relates to a micro LED display device and, a method for manufacturing the same. The method includes the following steps. First, a plurality of LED chips are formed on a supplying substrate. Next, a first substrate defining a plurality of groups of printed circuits is provided. Then the supplying substrate is overlaid in an inverted manner on the first substrate in such a manner that the LED chips are aligned with and attached onto the groups of printed circuits correspondingly. After the LED chips are detached from the supplying substrate, the supplying substrate is removed. Then a sol-gel glass is filled into gaps among the LED chips. Finally a second substrate is bonded with the first substrate. The present disclosure is capable of improving the yield rate and the reliability.

Abstract: An image sensor may include a substrate including a plurality of unit pixel regions and having first and second surfaces facing each other. Each of the unit pixel regions may include a plurality of floating diffusion parts spaced apart from each other in the substrate, storage nodes provided in the substrate to be spaced apart from and facing the floating diffusion parts, a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes, and photoelectric conversion parts sequentially stacked on one of the first and second surfaces. Each of the photoelectric conversion parts may include common and pixel electrodes respectively provided on top and bottom surfaces thereof and each pixel electrode may be electrically connected to a corresponding one of the storage nodes.

Abstract: A method and a device for carrying out the method for transferring electronic components from a carrier substrate to a receiving substrate.

Abstract: A lift-off method transfers onto a transfer substrate an optical device layer of an optical device wafer in which the optical device layer is formed over a front surface of an epitaxy substrate through a GaN buffer layer. The lift-off method includes: bonding the transfer substrate onto a front surface of the optical device layer through a bonding layer to form a composite substrate; applying a pulsed laser beam of such a wavelength as to be transferred through the epitaxy substrate constituting the composite substrate but to be absorbed in the buffer layer from a back surface side of the epitaxy substrate, to break the buffer layer; and peeling the optical device layer from the epitaxy substrate and transferring the optical device layer onto the transfer substrate, after the buffer layer breaking step is performed.

Abstract: Devices, methods, and systems for enclosures for an ion trapping device are described herein. One enclosure for an ion trapping device includes a heat spreader base that includes a perimeter portion and a center portion connected to the perimeter portion by a bridge portion, a grid array coupled to the heat spreader, a spacer with a plurality of studs coupled to the grid array, an interposer and ion trap die coupled to the spacer, a connector coupled to interposer, and a roof portion coupled to the heat spreader base.

Abstract: A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.

Abstract: One embodiment of a light-emitting element comprises: a substrate; a first-conductive type semiconductor layer disposed on the substrate and including at least one pit; a superlattice layer disposed on the first-conductive type semiconductor layer and including at least one pit; an active layer disposed on the superlattice layer and including at least one pit; an electron blocking layer disposed on the active layer and including at least one pit; a pit layer disposed on the electron blocking layer and including at least one pit; and a second-conductive type semiconductor layer disposed on the pit layer, wherein the pit layer can be doped with Mg at at least a portion thereof.

Abstract: A method of manufacturing a light emitting element includes: providing a wafer comprising: a sapphire substrate having a first face and a second face, and a semiconductor structure disposed on the second face; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements.

Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

Abstract: Provided is an optical semiconductor device including a semiconductor substrate; a first semiconductor multilayer that is stacked on a first surface side of the semiconductor substrate, has a mesa structure extending along a light emitting direction, and emits light from an exit end surface; an electrode pad portion for wire bonding which is electrically connected to the upper surface of the mesa structure of the first semiconductor multilayer, is disposed on one side of the mesa structure, and is electrically connected to outside; and an electrode pad peripheral portion including a first rising surface which is in contact with the outer edge of the electrode pad portion on the exit end surface side and rises along the stacking direction from the electrode pad portion, in which a lower surface of the electrode pad portion is higher than the upper surface of the mesa structure of the first semiconductor multilayer.

Abstract: An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.

Abstract: A method for manufacturing at last one light-emitting device including a light-transmissive member, a light-emitting element, and a reflective member, the method including: providing a holding member comprising a plurality of through-holes or recesses; disposing a light-transmissive member in at least one of the through-holes or at least one of the recesses; disposing a light-emitting element on the light-transmissive member in the at least one through-hole or the at least one recess; forming a reflective member in contact with a lateral surface defining the at least one through-hole or the at least one recess and covering a lateral surface of the light-emitting element; and removing the at least one light-emitting device from the holding member.

Abstract: There is provided a high-efficiency and high-definition liquid crystal display device in which a white light source is constituted by using a fluorescent substance composed of a quantum dot having a minute particle size, and an LED light-emitting element, light from the light source is allowed to be incident from one lateral surface of a backlight provided on a rear surface of the liquid crystal display device, and thus an amount of the quantum dot fluorescent substance that is used is reduced, and the thickness of the liquid crystal display device is made smaller as a whole.

Abstract: A photonic chip having a photonic-circuit layer supported on a substrate, the photonic-circuit layer including a suspended portion that extends beyond the outline of the substrate on the photonic-circuit layer. In various embodiments, the suspended portion may host one or more functional optical elements, such as an on-chip grating coupler, an on-chip microring resonator, and an on chip optical waveguide, that can be used to couple light in and out of the photonic chip. The geometry of the suspended portion enables unencumbered (e.g., double-sided) access to the one or more functional optical elements located therein and can advantageously be used to place an optical fiber and/or a second photonic chip sufficiently close to those functional optical elements to achieve a high chip-to-fiber or chip-to-chip optical-coupling efficiency.

Abstract: Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.

Abstract: A display device may include an organic light emitting device and an encapsulation structure provided on the organic light emitting device to seal the organic light emitting device. The encapsulation structure may include a first inorganic encapsulation layer provided on the organic light emitting device, an organic encapsulation layer provided on the first inorganic encapsulation layer, and a second inorganic encapsulation layer provided on the organic encapsulation layer. The first inorganic encapsulation layer may include a first inorganic layer provided on the organic light emitting device and a first plasma-treated layer provided on the first inorganic layer. The first plasma-treated layer may include an upper portion, in which a rugged structure is defined.

Abstract: A fingerprint recognition device and an OLED display device, which relate to the technical field of display and can solve the problems of a low recognition accuracy due to a large distance from a finger to a fingerprint recognition device. The fingerprint recognition device comprises recognition units alternately defined by a plurality of scanning lines and signal reading lines which are crisscrossed with each other. Each recognition unit is provided with a switching transistor and a photosensitive element. The photosensitive element comprises a photoelectric conversion layer and a collimator filter layer which are stacked successively. The collimator filter layer is used for irradiating incident light onto the photoelectric conversion layer in parallel, and the photoelectric conversion layer is used for performing photoelectric conversion on the incident light.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract: There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of nobel gas and has the noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.

Abstract: A vertical cavity surface emitting laser (VCSEL) array is provided. Each tunable VCSEL includes an output coupling mirror; a high reflectivity mirror; an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror; and a spacer layer disposed between the output coupling mirror and the active cavity material. A tuning cavity is defined within the spacer layer. Each VCSEL further includes a first contact pad and a second contact pad designed to receive a driving voltage; a tuning electrode on a first surface of the output coupling mirror for tuning the emission wavelength to a distinct wavelength.

Abstract: An energy storage capsule for storing energy in the form of photons. The body of the capsule may surround a sealed vacuum environment in which several layers of reactive material are contained, including an inner reflective coating, a first photovoltaic cell, an optical amplification medium, a second photovoltaic cell, and an outer reflective coating, provided in that order. The body of the capsule may also be reflective, for example polished aluminum. Light may be emitted from an LED wafer which may be integrated with the surface of the optical amplification medium, directed at the several layers of reactive material. Some photons may be reflected by the reflective material, storing them within the capsule, while others may be absorbed by the photovoltaic cells, powering the LEDs to transmit more photons. The thermal environment of the energy storage capsule may be maintained such that the LEDs can operate at over 100% efficiency.

Abstract: A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.

Abstract: A crystal laminate structure includes a Ga2O3-based substrate, and a ?-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The ?-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.

Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.

Abstract: A method for producing an organic electronic device is disclosed. In an embodiment the method includes applying an organic material to a substrate to form at least one organic functional layer, applying a patterned electrode material to the at least one organic functional layer by a first mask, and removing the organic material from regions which are free of the electrode material.

Abstract: An electro-optic display having a viewing surface through which a user views the display, a bistable, non-electrochromic electro-optic medium, and at least one electrode arranged to apply an electric field to the electro-optic medium, the display further comprising at least 10 micromoles per square meter of the viewing surface of at least one compound having an oxidation potential more negative that about 150 mV with respect to a standard hydrogen electrode, as measured at pH 8, where the compound having the oxidation potential comprises one or more compounds of Formulae I below: where in Formulae I, R1-R4 may be substituted or unsubstituted alkyl or aryl groups, or heteroatomic groups containing hetero atoms of Groups V-VII of the periodic table, and substituents R1 and R2 (taken together), and/or R3 and R4, may form a ring.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: A light emitting element according to one embodiment can comprise: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a light-transmitting ohmic layer on the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode on the light-transmitting ohmic layer. The light emitting element can include two first sides facing each other, and two second sides facing each other. The width of the first side is greater than the width of the second side, and the first side and the second side can be perpendicular to each other. The distance between the first branch electrode and the second branch electrode is ? to ½ of the width of the second side of either one thereof.

Abstract: Electronic device fins may be formed by epitaxially growing a first layer of material on a substrate surface at a bottom of a trench formed between sidewalls of shallow trench isolation (STI) regions. The trench height may be at least 1.5 times its width, and the first layer may fill less than the trench height. Then a second layer of material may be epitaxially grown on the first layer in the trench and over top surfaces of the STI regions. The second layer may have a second width extending over the trench and over portions of top surfaces of the STI regions. The second layer may then be patterned and etched to form a pair of electronic device fins over portions of the top surfaces of the STI regions, proximate to the trench. This process may avoid crystaline defects in the fins due to lattice mismatch in the layer interfaces.

Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.

Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.

Abstract: An imprint method includes: applying a applying a material for forming a patterned layer having a pattern, to a substrate; feeding a stamp film including a stamp pattern corresponding to the pattern of the patterned layer, along a pressure roller and an idle roller; forming the patterned layer having the pattern, including: the pressure roller pressing the stamp film toward the material to contact the stamp pattern of the stamp film with the material layer, curing the material layer in contact with the stamp pattern, and moving the pressure roller and the idle roller to peel the stamp film off the cured material layer by a peeling force, to form the patterned layer having the pattern; and detecting a defect in the formed patterned layer, during the peeling of the stamp film, by sensing the peeling force in real time by a pressure sensor connected to the pressure roller.

Abstract: Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.

Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.

Abstract: A method of making a wiring board having an electrical isolator and metal posts incorporated in a resin core is characterized by the provision of moisture inhibiting caps covering interfaces between the electrical isolator/metal posts and a surrounding plastic material. In a preferred embodiment, the electrical isolator and metal posts are bonded to the resin core by an adhesive substantially coplanar with the metal films on the electrical isolator, the metal posts and the metal layers on two opposite sides of the resin core at smoothed lapped top and bottom surfaces so that a metal bridge can be deposited on the adhesive at the smoothed lapped bottom surface to completely cover interfaces between the electrical isolator/metal posts and the surrounding plastic material. Conductive traces are also deposited on the smoothed lapped top surface to provide electrical contacts for chip connection and electrically coupled to the metal posts.

Abstract: The present disclosure relates to OLED and PV devices including transparent electrodes that are formed of conductive nanostructures and methods of improving light out-coupling in OLED and input-coupling in PV devices.

Abstract: A display device includes: a first substrate; a first electrode disposed on the first substrate; a liquid crystal layer disposed on the first electrode; a polarizing plate disposed on the liquid crystal layer; a color conversion layer disposed on the polarizing plate and including a plurality of color conversion portions; and a second substrate disposed on the color conversion layer. The polarizing plate includes a polymer film, and a distance between the liquid crystal layer and the color conversion layer is in a range of about 5 ?m to about 50 ?m.

Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

Abstract: A material structure and system for generating a III-Nitride digital alloy.

Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.

Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.