Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

Abstract: An electroluminescent device includes a light-emitting element, a drive transistor that supplies a driving current corresponding to a gradation voltage to the light-emitting element, a first conductive layer that is electrically connected to a gate of the drive transistor, and a second conductive layer that is supplied a fixed potential and that is disposed on a same layer as the first conductive layer. The first conductive layer and the second conductive layer are disposed apart and electrically insulated from one another, and in plan view, the first conductive layer is surrounded by the second conductive layer.

Abstract: A package includes a first lead including a first electrode terminal, a second lead including a second electrode terminal, a first molded body holding the first lead, and a second molded body holding the second lead. The second lead is provided on the first lead in an overlapping direction such that the first electrode terminal of the first lead overlaps with the second electrode terminal of the second lead when viewed in the overlapping direction. The first electrode terminal and the second electrode terminal are electrically connected to each other without adding additional material. A part of the first molded body and a part of the second molded body are in contact with each other.

Abstract: A cable substrate includes an insulating layer, a slit portion penetrating through at least a portion of the insulating layer in a thickness direction of the insulating layer, and a dummy pattern disposed on the insulating layer. At least a portion of the dummy pattern is exposed to the slit portion.

Abstract: A display device includes a display device including a substrate, and a display unit disposed on the substrate. An encapsulating unit encapsulates the display unit. The encapsulating unit includes a barrier organic layer. The barrier organic layer includes a plurality of organic materials and a plurality of inorganic materials. The inorganic materials are arranged in free volumes between the organic materials.

Abstract: A display device including a plurality of pixels over a substrate, the display device includes: a pixel-defining layer covering edges of a first electrode of each of the plurality of pixels; a first spacer arranged on the pixel-defining layer and including a first portion and a second portion, the first portion of the first spacer having a width increasing toward the substrate, and the second portion of the first spacer being arranged between the first portion of the first spacer and the substrate and having a width decreasing toward the substrate; and a first hole arranged apart from the first electrode between the plurality of pixels, the first hole being formed in the second portion of the first spacer and the pixel-defining layer.

Abstract: A system includes a processor and a memory with instructions. The instructions include, in response to receiving a zoned graph request, determining a current breakeven point on a current date based on a strike price of an option. The instructions include estimating a future strike price of the option based on an expiration date of the option, determining a future breakeven point on the expiration date of the option based on the estimated future strike price, and determining a range as a current price corresponding to the current breakeven point to a future price corresponding to the future breakeven point. The instructions include, for each time between the current date and the expiration date, determining a middle breakeven point at the corresponding time based on the range and generating a zoned graph including the current breakeven point, the future breakeven point, and each middle breakeven point at the corresponding times.

Abstract: A driving backplane includes a base, electroplating electrodes and driving electrodes. The base has first through holes in a sub-pixel region. The electroplating electrodes are disposed in the sub-pixel region, and at least a portion of each electroplating electrode is disposed within a respective one of the first through holes. The driving electrodes are disposed in the sub-pixel region and on a first side of the base, and each driving electrode is connected to a respective one of the electroplating electrodes.

Abstract: An electronic device is provided in the present disclosure. The electronic device includes a substrate and a light emitting diode. The light emitting diode is bonded to the substrate through a solder alloy. The solder alloy includes tin and a metal element M, and the metal element M is one of the indium and bismuth. The atomic percentage of tin in the sum of tin and the metal element M ranges from 60% to 90% in the solder alloy.

Abstract: Emissive display devices having LED sources with super-lambertian radiation patterns. An exemplary emission source may have a half-emission-cone-angle of less than 40°. A system, such as an augmented reality display system, employing such an emissive display device may display a reduction in power of up to three times relative to LED sources with a lambertian radiation pattern. In some systems, such as augmented reality display systems, the optical path down stream of such an emissive display device may be simplified and/or dimensionally scaled, and/or manufactured to lower tolerances. For example, a discrete collimating lens may be eliminated from the optical path of such an emissive display device.

Abstract: A gate driver for a display device includes: a clock signal line to transfer a clock signal; and a plurality of stages to sequentially output a gate signal based upon the clock signal in response to a carry signal. The plurality of stages include a plurality of thin film transistors, and at least one of the plurality of thin film transistors includes a thin film transistor including an oxide semiconductor. The at least one thin film transistor includes a first gate electrode and a second gate electrode disposed in different layers, the oxide semiconductor is disposed between the first gate electrode and the second gate electrode, and the first gate electrode and the second gate electrode are connected to receive a common voltage signal.

Abstract: A photonic device manufacturing method, including a step of transfer, onto a same surface of a photonic circuit previously formed inside and on top of a first substrate, of at least a first die made up of a III-V semiconductor material and of at least a second die made up of silicon nitride, the method further including a step of forming of photonic components in said at least one first and at least one second dies.

Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

Abstract: Provided is an organic EL display device including a resin substrate layer, a TFT layer provided on the resin substrate layer, and a light-emitting element that is provided on the TFT layer and constitutes a display region. The resin substrate layer includes a first resin layer, an inorganic layer, and a second resin layer, which are provided in that order from a side opposite to the TFT layer. The interior of the first resin layer contains a plurality of air bubbles.

Abstract: A display system and vehicle that have novel structures are provided. The display system includes a display panel, a correction circuit, and a memory circuit. The display panel is flexible. The display panel includes a display region and a non-display region. The memory circuit has a function of storing first data about the display region and second data about the non-display region. The non-display region has a region which overlaps with the display region when the display panel is bent. The correction circuit has a function of generating image data to be written to pixels in the display region on the basis of the first data and the second data.

Abstract: A display apparatus includes: a base substrate including a display area, an opening area, and an opening peripheral area between the opening area and the display area, wherein the display area surrounds the opening area, and the opening peripheral area has an annular shape; a conductive pattern disposed on the base substrate in the opening peripheral area and having an annular shape; and a light emitting layer disposed on the base substrate and in a portion of the opening peripheral area, and including an organic material, and wherein the light emitting layer is not formed at a portion of opening peripheral area that is adjacent to the opening area.

Abstract: A water detecting and ejecting sensor device includes a housing, a ceramic substrate, an integrated circuit and a sensor. The housing includes a cavity and the integrated circuit is disposed on a ceramic substrate. The sensor is disposed on the integrated circuit. The ceramic substrate includes one or more ports to expose the cavity to a surrounding environment, and each port includes at least two mesh layers.

Abstract: The present invention discloses a double color micro LED display panel including a plurality of pixels. Each of the pixels includes a substrate, a first semiconductor layer configured on the substrate, a second semiconductor layer configured on the first semiconductor layer, and a third semiconductor layer configured between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are N type, and the third semiconductor layer is P type. The first semiconductor layer and the third semiconductor layer form a first light emitting diode to emit a first light, and the second semiconductor layer and the third semiconductor layer form a second light emitting diode to emit a second light.

Abstract: An organic light emitting diode including at least one emitting material layer, which includes a host and a dopant and at least one exciton energy control layer disposed adjacently to the at least one emitting material layer and an organic light emitting device having the same is disclosed. The at least one exciton energy control layer includes an organic compound that has excited state singlet and triplet energy levels lower than excited state singlet and triplet energy levels of the host. The organic light emitting diode can enhance its luminous efficiency and its luminous lifetime by incorporating one or more exciton energy control layers.

Abstract: A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.

Abstract: An image sensor may include a substrate including a plurality of unit pixel regions and having first and second surfaces facing each other. Each of the unit pixel regions may include a plurality of floating diffusion parts spaced apart from each other in the substrate, storage nodes provided in the substrate to be spaced apart from and facing the floating diffusion parts, a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes, and photoelectric conversion parts sequentially stacked on one of the first and second surfaces. Each of the photoelectric conversion parts may include common and pixel electrodes respectively provided on top and bottom surfaces thereof and each pixel electrode may be electrically connected to a corresponding one of the storage nodes.

Abstract: A light emitting element comprises: a semiconductor layered body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and a dielectric member being in contact with the first semiconductor layer. The first semiconductor layer refractive index with respect to a wavelength of light differs from the light emitting layer refractive index with respect to the wavelength of light. The dielectric member comprises a first dielectric portion and a second dielectric portion. In a second direction that is perpendicular to a first direction that extends from the second semiconductor layer to the first semiconductor layer, a first portion of the first semiconductor layer is positioned between the first dielectric portion and the second dielectric portion. The first dielectric portion comprises the first surface and the second surface.

Abstract: A method of making a repaired electrical connection structure comprises providing a substrate having first and second contact pads electrically connected in parallel, providing first and second functionally identical components, disposing a first adhesive layer on the substrate, transferring the first component onto the first adhesive layer, electrically connecting the first component to the first contact pad, testing the first component to determine if the first component is a faulty component and, if the first component is a faulty component, disposing a second adhesive layer on the substrate and transferring the second component onto the second adhesive layer, and electrically connecting the second component to the second contact pad. The first and second adhesive layers can be unpatterned or patterned and the first and second components can be electrically connected to the first and second contact pads, respectively, with connection posts or photolithographically defined electrodes.

Abstract: The present disclosure provides a display panel, a display device, and a method for manufacturing a display panel. The display panel includes a pixel unit. The pixel unit includes a plurality of sub-pixel units. Each of the plurality of sub-pixel units includes at least one transparent film layer. Each of the plurality of sub-pixel units is divided into a light-emitting area and a light-transmitting area, and the quantity of the transparent film layer in the light-transmitting area is smaller than the quantity of the transparent film layer in the light-emitting area.

Abstract: A buffer layer is deposited on a substrate. A first III-V semiconductor layer is deposited on the buffer layer. A second III-V semiconductor layer is deposited on the first III-V semiconductor layer. The second III-V semiconductor layer comprises a channel portion and a source/drain portion. The first III-V semiconductor layer acts as an etch stop layer to etch a portion of the second III-V semiconductor layer to form the source/drain portion.

Abstract: A method for making a selective-area lift-off thin film comprises depositing a van der Waals (vdW) buffer on a substrate; depositing a thin film material (or device structure) on the van der Waals buffer; depositing an adhesion layer on the thin film material; forming a stressor layer on top of the thin film layer; and bonding a handle layer to the stressor layer. Force may be applied to the layered structure by one or more of rolling, bending, and shearing. The area selected for lift-off may be defined by one of laser cutting and mechanical scribing. The vdW buffer includes one or more of hBN, graphite, and graphene. The handle layer is a one of a polyimide tape, thermal release tape, UV release tape, water- or solvent-soluble tape, Kapton tape, and Scotch tape. The stressor layer is a metal film, e.g. Ni, Cr, Ti.

Abstract: A light emitting device includes: a light emitting element comprising: a semiconductor multilayer structure that has an electrode formation surface, a light-emitting surface opposite to the electrode formation surface, and side surfaces between the electrode formation surface and the light-emitting surface, and a pair of electrodes provided on the electrode formation surface; a covering member covering the side surfaces of the light emitting element; and an optical member disposed over the light-emitting surface of the light emitting element and an upper surface of the covering member, the optical member comprising: a light-reflective portion disposed above the light emitting element, and a light-transmissive portion disposed between the light-reflective portion and the covering member and forming a part of an outer side surface of the light emitting device.

Abstract: A semiconductor device includes an epitaxial straining region formed within a semiconductor substrate, the straining region being positioned adjacent to a gate stack, the gate stack being positioned above a channel. The straining region comprises a defect comprising two crossing dislocations such that a cross-point of the dislocations is closer to a bottom of the straining region than to a top of the straining region. The straining region comprises an element with a smaller lattice constant than a material forming the substrate.

Abstract: A LED device is provided. In one example, the LED device comprises: an electrical contact; and an epitaxial structure having a mesa shape and including: a first doped semiconductor layer; a second doped semiconductor layer; and a quantum well layer between the first doped semiconductor layer and the second doped semiconductor layer. The electrical contact is formed on the first doped semiconductor layer. The first doped semiconductor layer comprises a protrusion region between the electrical contact and the quantum well layer. The protrusion region facilitates movement of charges from the electrical contact to a limited region of the quantum well layer.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A light emitting apparatus including a light emitting device including a first base at which a laminate is provided, a second base at which the light emitting device is provided, and a first member provided between the first base and the second base, wherein the laminate includes a light emitter, the light emitter includes a first semiconductor layer, a second semiconductor layer of a conductivity type different from the conductivity type of the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer, the first member has one end connected to the first base and another end connected to the second base, and the laminate is connected to the second base on the side opposite the first base.

Abstract: A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an oxidation rate of an oxidation layer across the wafer.

Abstract: A display panel, comprising a display substrate and a packaging cover plate that are oppositely arranged to form a cell, in which the packaging cover plate comprises a cover plate substrate, an air cushion layer formed on the cover plate substrate, and an packaging layer covering the air cushion layer and having a first concave structure, the display substrate comprises a base substrate and a display component formed on the base substrate and embedded in the first concave structure.

Abstract: Solid-state ultrasound imaging devices, systems, and methods are provided. Some embodiments of the present disclosure are particularly directed to compact and efficient ultrasound transducer scanner formed from a substantially cylindrical semiconductor substrate. In some embodiments, an intravascular ultrasound (IVUS) device includes: an ultrasound scanner assembly disposed at a distal portion of the flexible elongate member, the ultrasound scanner assembly including a semiconductor substrate having a plurality of transistors formed thereupon. The semiconductor substrate is curved to have a substantially cylindrical form when the ultrasound scanner assembly is in a rolled form, and the plurality of transistors are arranged in a cylindrical arrangement when the ultrasound scanner assembly is in the rolled form.

Abstract: An organic light-emitting display apparatus including a first electrode disposed on a substrate; a pixel defining layer covering an edge of the first electrode; a layer disposed on the pixel defining layer, the layer including a fluoropolymer and contacting a top surface of the first electrode; a first organic functional layer including a first light emitting layer, the first organic functional layer having a lower surface contacting the top surface of the first electrode; and a second electrode disposed on the first organic functional layer.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface. The cone-shaped part has a first portion having a first angle of inclination of a side surface and a second portion having a second angle of inclination of a side surface smaller than the first angle. The second portion is closer to an apex of the cone-shaped part than the first portion and has a larger height than the first portion.

Abstract: An insulating layer containing fillers is formed to cover a first wiring layer. An opening portion, in which the first wiring layer is exposed, is formed in the insulating layer. A first alkali treatment, an ultrasonic cleaning treatment, and a second alkali treatment are sequentially performed on an upper surface of the insulating layer, on an inner wall surface of the opening portion, and an upper surface of the first wiring layer exposed in the opening portion. A second wiring layer electrically connected to the first wiring layer is formed by filling the opening portion by plating. The second wiring layer extends from an inside of the opening portion to the upper surface of the insulating layer.

Abstract: A lighting apparatus includes a light module, a driver and a wireless circuit. The light module includes an elongated substrate, a first LED chip layer mounted on a first side of the substrate and a second LED chip layer mounted on a second side of the substrate, and two electrodes on two opposite ends of the substrate. The wireless circuit is used for receiving an external command from an external device to control the driver to adjust the driving power of the light module to mix lights of different optical parameters. The driver has a plugging socket for plugging the wireless circuit.

Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 ?m before reaching the inclined sidewall.

Abstract: Methods for singulating an optical waveguide material at a contour include directing a first laser beam onto a first side of the optical waveguide material to generate a first group of perforations in the optical waveguide material. A second laser beam is directed onto a second side of the optical waveguide material to generate a second group of perforations in the optical waveguide material. The second side is opposite the first side. The first group of perforations and the second group of perforations define a perforation zone at the contour. A third laser beam is directed at the perforation zone to singulate the optical waveguide material at the perforation zone.

Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof.

Abstract: Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.

Abstract: A display device includes a display panel having a curved shape that is curved such that a convex surface thereof faces the outside of a housing of the electronic appliance and also includes a circuit board that is connected to the display panel at a connection point and is curved so as to correspond to the curved shape of the display panel. In the display device, the circuit board extends outward from the display panel and is bent into a U shape in such a manner that an end of the circuit board faces toward a central portion of the display panel. In addition, the circuit board has an extension portion that is formed so as to extend from the connection point in the same direction as an extending direction of the display panel.

Abstract: The light emitting apparatus includes a light emitting device including a first base at which a laminate is provided and a second base at which the light emitting device is provided. The laminate includes a first semiconductor layer, a second semiconductor layer of a conductivity type different from the conductivity type of the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer. The laminate includes a plurality of columnar sections. Connecting member is so provided between the adjacent columnar sections as to be connected to the adjacent columnar sections. The laminate is connected to the second base on the side opposite the first base.

Abstract: A light-emitting diode chip that includes an epitaxial semiconductor layer sequence having an active region that generates electromagnetic radiation during operation, and a passivation layer comprising magnesium oxide and magnesium nitride. The passivation layer may be applied to a lateral surface of the semiconductor layer sequence, and the passivation layer covering at least the active region.

Abstract: A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Alx1Ga1-x1-y1Iny1N, where-in y1?0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Alx2Ga1-x2-y2Iny2N, wherein x2?0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Alx3Ga1-x3-y3Iny3N, wherein x3+y3?0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.

Abstract: Provided is a self-processing synthesis of hybrid nanostructures, novel nanostructures and uses thereof in the construction of electronic and optoelectronic devices.

Abstract: Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.

Abstract: A semiconductor package device includes a wiring structure, a semiconductor chip and an encapsulant. The semiconductor chip is electrically connected to the wiring structure. The encapsulant is disposed on the wiring structure and covers the semiconductor chip. A roughness (Ra) of a surface of the encapsulant is about 5 nm to about 50 nm.

Abstract: A light emitting element includes a package substrate, a first light-emitting diode chip, an encapsulation material and a light-shielding layer. The first light-emitting diode chip is disposed on the package substrate, the encapsulation material is disposed on the first light-emitting diode chip and the package substrate, and the light-shielding layer is disposed on the encapsulation material and has a first opening. In a top-view direction, the area of the first opening of the light-shielding layer is less than the area of the light emitting element.