Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Abstract: Several embodiments of semiconductor systems and associated methods of color corrections are disclosed herein. In one embodiment, a method for producing a light emitting diode (LED) includes forming an (LED) on a substrate, measuring a base emission characteristic of the formed LED, and selecting a phosphor based on the measured base emission characteristic of the formed LED such that a combined emission from the LED and the phosphor at least approximates white light. The method further includes introducing the selected phosphor onto the LED via, for example, inkjet printing.

Abstract: A motor vehicle includes a display device designed for depicting objects, a computing device for controlling the display device, and a stowage unit in which a first end region of the display device is inserted. In a stowage position of the display device, the entire display device is inserted in the stowage unit, and, starting from the stowage position, a useful region of the display device is extendable out of the stowage unit by a predeterminable use distance. The display device is lockable at different length values of the use distance, and therefore a plurality of different use positions results, and the computing device is designed to adjust the depiction of the objects depending on the current length value of the use distance.

Abstract: The present disclosure discloses a display apparatus, a stereoscopic display apparatus, and an application terminal thereof. The display apparatus includes a display panel and a light collimation module. The display panel includes an RGB pixel array. The RGB pixel array includes multiple RGB pixels disposed at intervals. The light collimation module includes a control electrode layer, a first transparent substrate, a liquid crystal layer, and a second transparent substrate. The control electrode layer is disposed within the intervals between the RGB pixels or at positions that are on the display panel and that are corresponding to the intervals between the RGB pixels. The first transparent substrate is disposed on the display panel and covers the control electrode. The liquid crystal layer is disposed on the first transparent substrate. The second transparent substrate is disposed on the liquid crystal layer.

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an active layer including a plurality of well layers and a plurality of barrier layers on the first semiconductor layer, a second semiconductor layer on the active layer, and an electrode layer on the second semiconductor layer. A top surface of a first barrier layer adjacent to the second semiconductor layer includes an uneven surface and has a larger area than an area of a top surface of a second barrier layer, wherein the first barrier layer has a thickness thicker than a thickness of the second barrier layer.

Abstract: The present disclosure discloses an AMOLED display panel manufacturing method, apparatus and system. The method comprises: collecting size parameters of a substrate, constructing an AMOLED display panel model based on the size parameters, and determining spray data of respective organic vapor materials; controlling corresponding spraying devices to spray the respective organic vapor materials on the substrate successively according to the determined spray data of the respective organic vapor materials, to form an AMOLED display panel.

Abstract: The present invention provides an OLED packaging method and an OLED package structure. The OLED packaging method of the present invention is such that a silicon-doped diamond-like carbon layer and a diamond-like carbon scattering layer are both provided in an OLED package structure so that the silicon-doped diamond-like carbon layer may provide an effect of blocking external moisture and oxygen and the diamond-like carbon scattering layer is used to provide an effect of increasing light transmission rate, whereby it is possible to greatly extend the service life of the OLED device and also to ensure a relatively high light output efficiency of the OLED device.

Abstract: The invention provides a micro LED display panel, with sub-pixel area (2) disposed with a micro LED (3) of a size smaller than the size of the sub-pixel area (2), and using a reflective lens layer (5) disposed below the micro LED (3) to reflect the light emitted by micro LED (3) to the area surrounding the micro LED (3) inside the sub-pixel area (2), and thereby expanding the illuminating area inside the sub-pixel area (2) to enhance the display quality and reduce cost.

Abstract: A semiconductor device and a method for producing a semiconductor device are disclosed. The semiconductor device includes a first silicon layer; a first dielectric layer, located on the first silicon layer, where the first dielectric layer includes a window, and a bottom horizontal size of the window of the first dielectric layer is not greater than 20 nm; and a III-V semiconductor layer, located on the first dielectric layer and in the window of the first dielectric layer, and connected to the first silicon layer in the window of the first dielectric layer. A III-V semiconductor material of the semiconductor device has no threading dislocations, and therefore has relatively high performance.

Abstract: A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7.

Abstract: A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.

Abstract: The present invention provides a TFT array manufacturing method of an optimized 4M production process.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; an electrode comprising a surface next to the semiconductor system; a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material is selected from the group consisting of Be, Se, Sn, Zn, and combinations thereof; and a base material different from the base material and in the electrode.

Abstract: A pixel circuit includes a switching transistor whose conduction is controlled by a drive signal supplied to the control terminal, a drive wiring adapted to propagate the drive signal, and a data wiring adapted to propagate a data signal. A multi-layered wiring structure is used so that a second wiring layer is formed on a layer different from that on which a first wiring layer is formed.

Abstract: A light emitting device including a substrate, a first conductive layer on the substrate, a second conductive layer on the first conductive layer, a metal layer on the second conductive layer, a light emitting structure on the metal layer and the second conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, and a passivation layer disposed on a side surface of the light emitting structure.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

Abstract: Provided is a mask assembly, an apparatus, and a method of manufacturing a display apparatus using such mask assembly and apparatus. The mask assembly deposits a deposition material on a first pixel among a plurality of pixels disposed on a device substrate and including the first pixel and a second pixel includes a mask substrate, a molding layer stacked on the mask substrate and including a hole corresponding to a position of the second pixel, a blocking plate detachably mounted in the hole and configured to block the second pixel from the deposition material by covering the second pixel when the blocking plate is detached from the hole.

Abstract: Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

Abstract: A light-emitting device comprises a plurality of light-emitting pillars separated from each other by a space, wherein each of the plurality of light-emitting pillars comprises a first conductivity type layer, an active layer on the first conductivity type layer, and a second conductivity type layer on the active layer; a reflective layer surrounding a sidewall of each of the plurality of light-emitting pillars; a top electrode formed on the reflective layer and the plurality of light-emitting pillars; and a fill material formed between the reflective layer and the top electrode.

Abstract: An electronic device includes a support board having a mounting face and an integrated circuit chip mounted on the mounting face. An encapsulation block embeds the integrated circuit chip, the encapsulation block extending above the integrated circuit chip and around the integrated circuit chip on the mounting face of the support board. The encapsulation block includes a front face with a hole passing through the encapsulation block to uncovering at least part of an electrical contact. A layer made of an electrically conducting material fills the hole to make electrical connection to the electrical contact and further extends over the front face of the encapsulation block.

Abstract: An exemplary embodiment of the present invention relates to a conductive structure body that comprises a darkening pattern layer having AlOxNy, and a method for manufacturing the same. The conductive structure body according to the exemplary embodiment of the present invention may prevent reflection by a conductive pattern layer without affecting conductivity of the conductive pattern layer, and improve a concealing property of the conductive pattern layer by improving absorbance. Accordingly, a display panel having improved visibility may be developed by using the conductive structure body according to the exemplary embodiment of the present invention.

Abstract: A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.

Abstract: A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.

Abstract: An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

Abstract: Quantum cascade (QC) lasers and methods of fabricating such QC lasers are provided. The QC lasers incorporate a DFB grating without requiring the use of relying on epitaxial regrowth processes. The DFB gratings are formed as sidewall gratings along the lateral length of the QC active region, or the DFB gratings are formed atop the lateral length of the QC active region, and wherein the top DFB grating is planarized with a polymeric material.

Abstract: An image display apparatus according to embodiments includes a display that includes a planar display surface on which an image is displayed, a cover member that includes a curved operation surface being a target for a touch operation, and a touch sensor that detecting the touch operation with respect to the operation surface. Between the cover member and the display, a clear resin body is arranged that is a transmission body that fills a space between the cover member and the display so that the space is not hollow.

Abstract: The invention relates to a method for producing chips (13) by dividing a wafer along dividing lines (11, 12) defining dimensions of the chip, wherein a focus (18) of a preferably pulsed laser radiation (16) is moved along the dividing lines on a first and at least a second path (25, 26) within the wafer body, wherein the laser radiation is applied to the wafer from a rear side (17) of the wafer, and the power density for producing the defects (28) on the first path (25) is lower than the power density for producing the defects (29) on the second path (26), and/or the number of defects on the first path is smaller than the number of defects on the second path.

Abstract: The present invention discloses the syntheses of new polymers with defined structures, comprising dithienothiophene (DTT) and thienothiophene (TT) derivatives and boron, light emitting devices of which have wide spectrum of fluorescence at visible region and potential of emitting white light.

Abstract: A method for inspecting defects inside a rod-shaped transparent object by using a scanning beam of parallel light rays directed onto a rod-shaped transparent object orthogonally to the longitudinal axis of the object so that an inspection plane comprises an object's cross-section. The scanning beam is detected at an opposite side of the rod-shaped object that is interposed to intercept the parallel rays of the scanning beam. The electric output signal from the detector is processed to produce a first light intensity profile in a first scan direction, the light intensity profile comprising a shadow region delimited by first and second shadow edges, which is indicative of the outside diameter of the object across the inspection plane.

Abstract: A method according to embodiments of the invention includes providing a plurality of LEDs attached to a mount. A filter is attached to at least one of the plurality of LEDs. A protective layer is formed over the filter. A reflective layer is formed over the mount. A portion of the reflective layer disposed over the protective layer is removed.

Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate. An isolation feature is disposed in the semiconductor substrate to define a pixel region and a periphery region of the semiconductor substrate. A transistor gate is formed on the semiconductor substrate in the pixel region, in which the transistor gate has a first sidewall and a second sidewall opposite to the first sidewall. A photodiode is disposed in the semiconductor substrate and adjacent to the second sidewall of the transistor gate. A patterned spacer layer is formed on the photodiode and on the transistor gate. The patterned spacer layer includes a first sidewall spacer on the first sidewall of the transistor gate, and a protective structure covering the photodiode and a top surface of the transistor gate.

Abstract: The present disclosure relates to the field of display technologies, and particularly, to a spliced display device and a display system. The spliced display device comprises: a frame; and a plurality of display modules; wherein the plurality of display modules is spliced into an image displaying region, and the frame is disposed around a periphery of the image displaying region. The spliced display device has advantages of high structural strength and be difficult to deform under the action of external force.

Abstract: The present provides a display device and a method for manufacturing the same. The display device includes a first substrate and a second substrate arranged opposite to each other to form a display panel. A deformation layer is arranged on any surface of the display panel. Through the deformation layer on any surface of the display panel, when the deformation layer reaches a first deformation temperature, the deformation layer generates a deformation so as to apply an internal force to the display panel. Because the display panel is of a constant size, it is curved due to the internal force, so as to achieve curved-surface display. In other words, the display panel is curved under the effect of the internal force generated by itself, and it may be always maintained at its curved shape when the internal force is applied continuously.

Abstract: A light emitting element includes at least a first light reflecting layer 41 formed on a surface of a substrate 11, a laminated structural body 20 made of a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 formed on the first light reflecting layer 41, and a second electrode 32 and a second light reflecting layer 42 formed on the second compound semiconductor layer 22, the laminated structural body 20 is configured from a plurality of laminated structural body units 20A, a light emitting element unit 10A is configured from each of the laminated structural body units 20A, and a resonator length in the light emitting element unit 10A is different in every light emitting element unit.

Abstract: Provided is a mask assembly, an apparatus, and a method of manufacturing a display apparatus using such mask assembly and apparatus. The mask assembly deposits a deposition material on a first pixel among a plurality of pixels disposed on a device substrate and including the first pixel and a second pixel includes a mask substrate, a molding layer stacked on the mask substrate and including a hole corresponding to a position of the second pixel, a blocking plate detachably mounted in the hole and configured to block the second pixel from the deposition material by covering the second pixel when the blocking plate is detached from the hole.

Abstract: A light-emitting element, a bonding layer, and a frame-like partition are formed over a substrate. The partition is provided to surround the bonding layer and the light-emitting element, with a gap left between the partition and the bonding layer. A pair of substrates overlap with each other under a reduced-pressure atmosphere and then exposed to an air atmosphere or a pressurized atmosphere, whereby the reduced-pressure state of a space surrounded by the pair of substrates and the partition is maintained and atmospheric pressure is applied to the pair of substrates. Alternatively, a light-emitting element and a bonding layer are formed over a substrate. A pair of substrates overlap with each other, and then, pressure is applied to the bonding layer with the use of a member having a projection before or at the same time as curing of the bonding layer.

Abstract: Embodiments of the present disclosure are directed to optical packages having a package body that includes a light protection coating on at least one surface of a transparent material. The light protection coating includes one or more openings to allow light to be transmitted to the optical device within the package body. In one embodiment, the light protection coating and the openings allow substantially perpendicular radiation to be directed to the optical device within the package body. In one exemplary embodiment the light protection coating is located on an outer surface of the transparent material. In another embodiment, the light protection coating is located on an inner surface of the transparent material inside of the package body.

Abstract: There is provided a method of filling a recess with a germanium-based film composed of germanium or silicon germanium in a substrate to be processed on which an insulating film having the recess formed therein is formed, the method including: forming a silicon film on a surface of the insulating film at a thickness as not to completely fill the recess; subsequently, etching the silicon film such that the silicon film remains only in a bottom portion of the recess; and subsequently, selectively growing the germanium-based film composed of germanium or silicon germanium on the silicon film remaining in the bottom portion of the recess and selectively filling the recess with the germanium-based film.

Abstract: There are provided a lens member, a method of manufacturing the lens member, a communication module, a lens array, and a light-source module, the lens member including a ready-made glass lens added with a mounting portion having a reference face as a plane for reference when the glass lens is mounted on a substrate. A lens member includes a glass ball lens to which sphericity processing has been previously performed, and a resin mounting portion 13 disposed on the glass ball lens. The mounting portion is molded by flowing the resin in a flowable state into a die including the glass ball lens disposed therein. The mounting portion includes a reference face that abuts on a mounting face in a case where the glass ball lens is surface-mounted, provided thereto.

Abstract: The present disclosure provides pharmaceutical compositions comprising Stat3 inhibitors and certain pharmaceutically acceptable salts thereof, and methods of use.

Abstract: Provided is a mask assembly, an apparatus, and a method of manufacturing a display apparatus using such mask assembly and apparatus. The mask assembly deposits a deposition material on a first pixel among a plurality of pixels disposed on a device substrate and including the first pixel and a second pixel includes a mask substrate, a molding layer stacked on the mask substrate and including a hole corresponding to a position of the second pixel, a blocking plate detachably mounted in the hole and configured to block the second pixel from the deposition material by covering the second pixel when the blocking plate is detached from the hole.

Abstract: A process of producing a radiation-emitting organic-electronic device having a first and a second electrode layer and an emitter layer includes: A) providing a phosphorescent emitter with an anisotropic molecule structure and a matrix material, B) applying the first electrode layer to a substrate, C) applying the emitter layer under thermodynamic control, with vaporization of the phosphorescent emitter and of the matrix material under reduced pressure and deposition thereof on the first electrode layer such that molecules of the phosphorescent emitter are in anisotropic alignment, and D) applying the second electrode layer on the emitter layer.

Abstract: Optical sensor unit for infra red evanescence wave spectroscopy (IR-EWS) analysis of chemical and biological substances in an analyte, comprising a waveguide with a sensor surface to be put into contact with the analyte, wherein the sensor surface is provided with an affinity enhancing layer. There is further provided a method of producing an optical sensor unit.

Abstract: A light emitting device has a base body equipped with a base material and a pair of connection terminals disposed from a first main face to a second main face that is on the opposite side from the first main face; a plurality of light emitting elements connected to the connection terminals on the first main face; and a light reflecting member that covers the side faces of the light emitting elements, the base material having a protruding component on the second main face, the protruding component being one of a heat releasing terminal, a reinforcement terminal, and an insulating film, and the connection terminals being disposed on the first main face from the second main face on both sides of the protruding component, and being partly exposed from the light reflecting member on both sides of the first main face.

Abstract: A near-infrared-absorbing composition includes a copper compound and a compound having a partial structure represented by Formula (1) described below and the content of the copper compound is in a range of 3×10?3 mol to 1 mol in relation to 1 g of the compound having the partial structure represented by Formula (1) described below, in Formula (1), R1 represents a hydrogen atom or an organic group.

Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Abstract: A light emitting device has a substrate including a pair of connection terminals at least on a first main surface of the substrate a light emitting element connected to the connection terminals by a molten material, and a light reflecting member covering the light emitting element, at least one of the connection terminals including a protruding portion configured to project from a first main surface of the connection terminal at a region which is connected with the light emitting element, the protruding portion and the molten material being embedded into the light reflecting member.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a first electrode part; a second electrode part; a third electrode part, spaced apart from the first electrode part and the second electrode part; and a light-emitting unit partially covering the first electrode part and the second electrode part and fully covering the second electrode part, the light-emitting unit having a conductive structure contacting the second electrode part.