Abstract: A vapor deposition mask (100) includes a resin layer (10) including a plurality of openings (11); a magnetic metal layer (20) located so as to overlap the resin layer, the magnetic metal layer including a mask portion (20a) having such a shape as to expose the plurality of openings and a peripheral portion (20b) located so as to enclose the mask portion; and a frame (30) secured to the peripheral portion of the magnetic metal layer. The resin layer is not joined to the mask portion of the magnetic metal layer but is joined to at least a part of the peripheral portion of the magnetic metal layer.

Abstract: Embodiments described herein generally relate to apparatus and methods for processing a substrate utilizing a high radio frequency (RF) power. The high RF power enables deposition of films on the substrate with more desirable properties. A first plurality of insulating members is disposed on a plurality of brackets and extends laterally inward from a chamber body. A second plurality of insulating members is disposed on the chamber body and extends from the first plurality of insulating members to a support surface of the chamber body. The insulating members reduce the occurrence of arcing between the plasma and the chamber body.

Abstract: Provided is a manufacturing process of an element chip, which comprises a preparation step, a setting step for setting the substrate on a stage, and a plasma-dicing step for dividing the substrate into a plurality of element chips, wherein the plasma-dicing step is achieved by repeatedly implementing etching routines each including an etching step for etching the second layer along the street regions to form a plurality of grooves and a depositing step for depositing a protective film on inner walls of the grooves, wherein the plasma-dicing step includes a first etching step for forming the grooves each having a first scallop on the inner wall thereof at a first pitch, and a second etching step for forming the grooves each having a second scallop on the inner wall thereof at a second pitch, and wherein the second pitch is greater than the first pitch.

Abstract: A metallic etching process includes applying an anti-reflection coating over a metallic superstrate, applying a dry film photoresist over the anti-reflection coating, removing exposed portions of the dry film photoresist exposing a portion of the anti-reflection coating, etching the exposed portions of the anti-reflection coating exposing portions of the metal superstrate, etching portions of the metallic superstrate not covered by the dry film photoresist, and removing the dry film photoresist and the anti-reflection coating leaving portions of the metallic superstrate. An indium bump liftoff process includes applying a positive photoresist, forming a liftoff mask by applying a dry film photoresist over the positive photoresist, removing exposed portions of the liftoff mask to expose a portion of a substrate, depositing an indium film over the exposed portion of the substrate and remaining portions of the liftoff mask, and removing remaining portions of the liftoff mask.

Abstract: A polishing composition for use in polishing an object to be polished, which comprises abrasive grains, a dispersing medium, and an additive, wherein the abrasive grains are surface-modified, the additive is represented by the following formula 1: wherein in the formula 1, X1 is O or NR4, X2 is a single bond or NR5, R1 to R5 are each independently a hydrogen atom; a hydroxy group; a nitro group; a nitroso group; a C1-4 alkyl group optionally substituted with a carboxyl group, an amino group, or a hydroxy group; or CONH2; with the proviso that R2 and R5 may form a ring; when X2 is a single bond, R3 is not a hydrogen atom, or R1 to R3 are not a methyl group; and when X2 is NR5 and three of R1 to R3 and R5 are a hydrogen atom, the other one is not a hydrogen atom or a methyl group; and a pH is 5.0 or less.

Abstract: A method of forming fine interconnection includes: forming spacers on a first and second hard mask layer on a dielectric layer; forming a first via hole through the first hard mask layer, the second hard mask layer, and the dielectric layer; oxidizing a sidewall of the first hard mask layer that surrounding the via hole; forming a second via hole in the second hard mask layer; forming a mask to cover the first hard mask layer in the second via hole; forming a line trench in a portion of the second hard mask layer exposed by the spacers and the mask, and in the first hard mask layer and the dielectric layer that are below the portion of the second hard mask layer; and forming a conductive material in the line trench and the first via hole.

Abstract: A polishing method for polishing by sliding a semiconductor silicon wafer, held by a polishing head, against a polishing pad attached to a turn table while supplying a polishing agent, wherein the semiconductor silicon wafer is subjected to primary polishing, secondary polishing, and final polishing in turn, the secondary polishing comprises polishing by an alkaline based polishing agent which includes free abrasive grains and does not include a water-soluble polymer agent, and subsequent rinse polishing by a polishing agent which includes a water-soluble polymer agent and the rinse polishing includes two stages of polishing, wherein, after performing a first stage of the rinse polishing while supplying a polishing agent which includes a water-soluble polymer agent, a second stage of the rinse polishing is performed while supplying a switched polishing agent whose water-soluble polymer agent has an average molecular weight larger than the polishing agent of the first stage.

Abstract: A method of manufacturing a semiconductor element includes: a first providing step comprising providing a structure body comprising a semiconductor stacked body, the structure body including first surfaces that include surfaces defining at least one first recess; a first forming step comprising forming a first rough-surface portion at or inward of at least a portion of the surfaces defining the first recess of the structure body; a second forming step comprising forming a first metal layer at a first surface side of the structure body; a second providing step comprising providing a substrate on which a second metal layer is disposed; and a bonding step comprising heating the first metal layer and the second metal layer in a state in which the first metal layer and the second metal layer face each other.

Abstract: In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers containing Ge and second semiconductor layers are alternately stacked, is formed over a bottom fin structure. A Ge concentration in the first semiconductor layers is increased. A sacrificial gate structure is formed over the fin structure. A source/drain epitaxial layer is formed over a source/drain region of the fin structure. The sacrificial gate structure is removed. The second semiconductor layers in a channel region are removed, thereby releasing the first semiconductor layers in which the Ge concentration is increased. A gate structure is formed around the first semiconductor layers in which the Ge concentration is increased.

Abstract: A substrate processing method is provided, which includes: an ozone-containing hydrofluoric acid solution spouting step of spouting an ozone-containing hydrofluoric acid solution containing ozone dissolved therein from a nozzle toward one major surface of a substrate held by a substrate holding unit; and a brush-cleaning step of cleaning the one major surface of the substrate by bringing a cleaning brush into abutment against the one major surface of the substrate, the brush-cleaning step being performed after the ozone-containing hydrofluoric acid solution spouting step or in parallel with the ozone-containing hydrofluoric acid solution spouting step.

Abstract: An etching method includes: adsorbing an adsorbate based on a processing gas containing BCl3 gas onto a target object, which serves as a to-be-etched object, by: supplying H2 gas and the processing gas to a process space in which the target object is disposed; and applying power of a predetermined frequency to the process space, while supplying the H2 gas is stopped, to generate plasma in the process space; and etching the target object by generating plasma of a rare gas in the process space to activate the adsorbate.

Abstract: An optical filter may include a substrate. The optical filter may include a first mirror and a second mirror. Each of the first mirror and the second mirror may include a plurality of quarterwave stacks. The plurality of quarterwave stacks may include a plurality of layers comprising a first material, a second material, and a third material. The optical filter may include a spacer disposed between the first mirror and the second mirror.

Abstract: A method of preparing a patterned cured product, the method including: providing a composition including a sol-gel reactive silicon-containing monomer, a polymerizable (meth)acryl monomer, a photoinitiator, and a fluorinating agent on a substrate to form a first layer on the substrate; contacting the first layer with a master mold to form a second layer including a pattern transferred by the master mold; and obtaining the patterned cured product from the second layer, wherein obtaining of the patterned cured product from the second layer includes a sol-gel reaction, a photocuring reaction, and a separating of the master mold.

Abstract: A method for producing light-emitting UV column structures using the epitaxy of the organometallic compounds of the gaseous phase on a PSS plate having a surface for epitaxy provided with protrusions with a regular shape, having a tip and a side surface, in particular protrusions with a conical shape. The present disclosure also includes structures produced using this method.

Abstract: A semiconductor manufacturing apparatus according to an embodiment comprises a chamber capable of containing a substrate therein. A mount part can have the substrate mounted thereon. A first member is provided between an inner wall of the chamber and a plasma generation region above the mount part. An optical transmitter is provided in an opening that is provided in the first member to extend from a side of the inner wall of the chamber to the plasma generation region or provided in gaps between a plurality of the first members.

Abstract: Semiconductor devices and methods to fabricate the devices are provided. For example, a semiconductor device includes a back-end-of-line (BEOL) structure formed on a semiconductor substrate. The BEOL structure further includes at least one metallization layer comprising a pattern of elongated parallel metal lines. The pattern of elongated metal lines comprises a plurality of metal lines having a minimum width and at least one wider metal line having a width which is greater than the minimum width.

Abstract: The present invention provides a method for forming a semiconductor pattern, comprising: firstly, a target layer is provided and a first material layer is formed on the target layer, and then a first pattern is formed on the first material layer, followed by a first self-aligned double pattering step is performed, a plurality of first grooves are formed in the first material layer. Next, a second material layer is formed on the first material layer, and a plurality of second grooves are formed in the second material layer. Next, transferring a pattern of the overlapping portion of the first grooves and the second grooves into the target layer, the target layer includes a plurality of third patterns and a plurality of fourth patterns, an area of each fourth pattern is larger than an area of each third pattern.

Abstract: A device is disclosed including a substrate and a floating blinded infrared detector and/or a shunted blinded infrared detector. The floating blinded infrared detector may include an infrared detector coupled to and thermally isolated from the substrate; and a blocking structure disposed above the infrared detector to block external thermal radiation from being received by the infrared detector; and wherein the blocking structure comprises a plurality of openings. The shunted blinded infrared detector may include an additional infrared detector coupled to the substrate; an additional blocking structure disposed above the infrared detector to block external thermal radiation from being received by the additional infrared detector; and a material that thermally couples the additional infrared detector to the substrate and the additional blocking structure. Methods for using and forming the device are also disclosed.

Abstract: Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin and the second fin, respectively. In addition, the semiconductor device includes a gate dielectric layer between the first fin and the first gate electrode and between the second fin and the second gate electrode. Further, the semiconductor device includes a dummy gate electrode over the substrate, and the dummy gate electrode is between the first gate electrode and the second gate electrode. An upper portion of the dummy gate electrode is wider than a lower portion of the dummy gate electrode.

Abstract: Semiconductor devices include a first dielectric layer formed over a source and drain region. A second dielectric layer is formed over the first dielectric layer, the second dielectric layer having a flat, non-recessed top surface. A gate stack passes vertically through the first and second dielectric layers to contact the source and drain regions and an underlying substrate.

Abstract: A method for processing a substrate in a processing chamber, comprising forming a deposition over the substrate is provided. A silicon containing gas is flowed into the processing chamber. A COS containing gas is flowed into the processing chamber. A plasma is formed from the silicon containing gas and the COS containing gas in the processing chamber, wherein the plasma provides the deposition over the substrate.

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract: Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.

Abstract: A high speed thin film two terminal resistive memory article of manufacture comprises a chargeable and dischargeable variable resistance thin film battery having a plurality of layers operatively associated with one another, the plurality of layers comprising in sequence, a cathode-side conductive layer, a cathode layer comprised of a material that can take up cations and discharge cations in a charging and discharging process, an electrolyte layer comprising the cations, a barrier layer, an anode layer, and an optional anode-side conductive layer, the barrier layer comprised of a material that substantially prevents the cations from combining with the anode layer.

Abstract: The present invention provides a method and a structure of increasing source and drain contact edge width in a two-dimensional material field effect transistor. The method includes patterning a two-dimensional material over an insulating substrate; depositing a gate dielectric over the two-dimensional material; depositing a top gate over the gate dielectric, wherein the top gate has a hard mask thereon; forming a sidewall spacer around the top gate; depositing an interlayer dielectric oxide over the sidewall spacer and the hard mask; removing the interlayer dielectric oxide adjacent to the sidewall spacer to form an open contact trench; depositing a copolymer coating in the contact trench region; annealing the copolymer to induce a directed self-assembly; performing a two-dimensional material etch over the two-dimensional material; removing the unetched copolymer without etching the gate dielectric; and etching the exposed gate in the source and the drain region to form a metal contact layer.

Abstract: A plating apparatus includes a processing bath configured to store a processing liquid therein, a transporter configured to immerse a substrate holder, holding a substrate, in the processing liquid, raise the substrate holder out of the processing bath, and transport the substrate holder in a horizontal direction, and a gas flow generator configured to generate a clean gas flow forward of the substrate with respect to a direction in which the substrate holder is transported. The transporter moves the gas flow generator together with the substrate holder in the horizontal direction while transporting the substrate holder in the horizontal direction.

Abstract: The present application discloses a touch substrate including a base substrate, and a touch electrode layer on the base substrate having a first region having a plurality of first mesh electrode patterns, a second region having a plurality of second mesh electrode patterns corresponding to the plurality of first mesh electrode patterns, and an interface region between the first region and the second region. Each of the plurality of first mesh electrode patterns includes a plurality of first mesh electrode lines having a first line width. A corresponding second mesh electrode pattern includes a plurality of second mesh electrode lines corresponding to the plurality of first mesh electrode lines and having the first line width. The first mesh electrode line in the interface region has a second line width no less than the first line width.

Abstract: Provided are a method of manufacturing a flexible device and the flexible device, a solar cell, and a light emitting device. The method of manufacturing a flexible device includes providing a device layer on a sacrificial substrate, contacting a flexible substrate on one side surface of the device layer, and removing the sacrificial substrate. A large area device may be transferred onto the flexible substrate with superior alignment to realize and manufacture the flexible device. In addition, since mass production is possible, the economic feasibility may be superior. Also, when a large area solar cell having a thin thickness is manufactured, since a limitation such as twisting of a thin film of a solar cell may be effectively solved, the economic feasibility and stability may be superior.

Abstract: A method is employed to separate a carbon structure, which is disposed on a seed structure, from the seed structure. In the method, a carbon structure is deposited on the seed structure in a process chamber of a CVD reactor. The substrate comprising the seed structure (2) and the carbon structure (1) is heated to a process temperature. At least one etching gas is injected into the process chamber, the etching gas having the chemical formula AOmXn, AOmXnYp or AmXn, wherein A is selected from a group of elements that includes S, C and N, wherein O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero. Through a chemical reaction with the etching gas, the seed structure is converted into a gaseous reaction product. A carrier gas flow is used to remove the gaseous reaction product from the process chamber.

Abstract: Semiconductor devices and methods of forming the same include forming a stack of layers of alternating materials, including first layers of sacrificial material and second layers of channel material. The first layers are recessed relative to the second layers with an etch that etches the second layers at a slower rate than the first layers to taper ends of the second layers. First spacers are formed in recesses formed by recessing the first layers. Second spacers are formed in recesses formed by recessing the first layers. The first spacers are etched to expose sidewalls of the second spacer. Source/drain extensions are formed in contact with exposed ends of the second layers.

Abstract: A patterning method for forming a semiconductor device is disclosed. A substrate having a hard mask disposed thereon is provided. A first patterned layer is formed on the hard mask layer. A first self-aligned double patterning process based on the first patterned layer is performed to pattern the hard mask layer into a first array pattern and a first peripheral pattern. After that, a second patterned layer is formed on the substrate. A second self-aligned double patterning process based on the second patterned layer is performed to pattern the first array pattern into a second array pattern. Subsequently, a third patterned layer is formed on the substrate. An etching process using the third patterned mask layer as an etching mask is performed to etch the first peripheral pattern thereby patterning the first peripheral pattern into a second peripheral pattern.

Abstract: Various circuits may benefit from suitable protection. For example, certain displays, such as active matrix liquid crystal displays, may benefit from enclosures configured to protect driver circuits from high intensity radiated fields. A system can include a first protective conductive coating layer. The system can also include a first insulating layer on the first protective conductive layer. The system can further include a signal conductive layer on the insulating layer. The system can additionally include a driver layer mounted to the signal conductive layer. The system can also include a second insulating layer above the driver layer. The system can further include a second protective conductive coating layer on the second insulating layer. The system can additionally include one or a plurality of conductive elements disposed between the first protective conductive coating layer and the second protective conductive coating layer to form an enclosure around the driver layer.

Abstract: A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer over the semiconductor substrate is formed. A plurality of dopants are formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion.

Abstract: A method of forming a semiconductor device structure comprises forming a stack structure over a substrate, the stack structure comprising tiers each independently comprising a sacrificial structure and an insulating structure and longitudinally adjacent the sacrificial structure. A masking structure is formed over a portion of the stack structure. A photoresist is formed over the masking structure and over additional portions of the stack structure not covered by the masking structure. The photoresist and the stack structure are subjected to a series of material removal processes to selectively remove portions of the photoresist and portions of the stack structure not covered by one or more of the masking structure and remaining portions of the photoresist to form a stair step structure. Semiconductor devices and additional methods of forming a semiconductor device structure are also described.

Abstract: Provided is a slurry composition including abrasive particles, halogen oxide, and nitroxide compound. The combination of halogen oxide and nitroxide compound has a synergistic effect to remove a substrate containing tungsten and silicon oxide. Moreover, a use of the slurry composition and a polishing method using the slurry composition are provided.

Abstract: Methods include exposing polysilicon to an aqueous composition comprising nitric acid, poly-carboxylic acid and ammonium fluoride, and removing a portion of the polysilicon selective to an oxide using the aqueous composition.

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

Abstract: Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a denuded zone, and having low surface roughness, are produced by forming an oxynitride layer on a purposefully oxidized epitaxial layer by a short RTA treatment in a nitriding atmosphere, removing the oxynitride layer, and then polishing the epitaxial surface.

Abstract: A method of forming a semiconductor memory device includes following steps. First of all, a target layer is provided, and a mask structure is formed on the target layer, with the mask structure including a first mask layer a sacrificial layer and a second mask layer. The first mask layer and the second mask layer include the same material but in different containing ratio. Next, the second mask layer and the sacrificial layer are patterned, to form a plurality of mandrels. Then, a plurality of spacer patterns are formed to surround the mandrels, and then transferred into the first mask layer to form a plurality of opening not penetrating the first mask layer. Finally, the first mask layer is used as a mask to etch the target layer, to form a plurality of target patterns.

Abstract: There is provided a method for forming an electrically conductive ultrafine pattern which has an excellent pattern cross-sectional shape is provided by a composite technique including a printing process and a plating process, and furthermore, by imparting excellent adhesion to each interface of a laminate including a plating core pattern, an electrically conductive ultrafine pattern which can be preferably used as a highly accurate electric circuit and a method for manufacturing the same are also provided. The method includes (1) a step of applying a resin composition to form a receiving layer on a substrate; (2) a step of printing an ink containing plating core particles by a reverse offset printing method to form a plating core pattern on the receiving layer; and (3) a step of depositing a metal on the plating core pattern formed in the step (2) by an electrolytic plating method.

Abstract: A method of preparing a diamond crystal substrate for epitaxial deposition thereupon of a delta doping layer includes preparing an atomically smooth, undamaged diamond crystal substrate surface, which can be in the (100) plane, by polishing the surface and then etching the surface to remove subsurface damage caused by the polishing. The polishing can include a rough polish, for example in the (010) direction, followed by a fine polish, for example in the (011) direction, that removes the polishing tracks from the rough polishing. After etching the polished face can have a roughness Sa of less than 0.3 nm. An inductively coupled reactive ion etcher can apply the etching at a homogeneous etch rate using an appropriate gas mixture such as using argon and chlorine to remove between 0.1 and 10 microns of material from the polished surface.

Abstract: Methods and apparatuses for selectively depositing silicon oxide on dielectric surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having dielectric and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma to convert the adsorb silicon-containing precursor to form silicon oxide, and exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.

Abstract: A substrate processing apparatus includes a chamber, a substrate holding unit, an elevated/lowered member, and an elevation/lowering driving unit. The chamber includes a base plate having an upper surface that defines a housing space. The substrate holding unit is housed in the housing space, is placed on the upper surface of the base plate, and holds a substrate. The elevated/lowered member is elevated and lowered inside the housing space. The elevation/lowering driving unit drives the elevation and lowering of the elevated/lowered member. The elevation/lowering driving unit includes a driving source, disposed higher than a lower surface of the base plate, and an elevating/lowering head, which is connected to a guard and is moved vertically by the driving source within a movable range in which an entirety of the head is positioned higher than the lower surface of the base plate.

Abstract: Multilevel circuitry such as a a 3D memory array, has a set of contact regions arranged around a perimeter of a multilevel region, in which connection is made to circuit elements in a number W levels. Each of the contact regions has a number of steps having landing areas thereon, including steps on up to a number M levels, where the number M can be much less than W. A combination of contact regions provides landing areas on all of the W levels, each of the contact regions in the combination having landing areas on different subsets of the W levels. A method of forming the device uses an etch-trim process to form M levels in all of the contact regions, and one or more anisotropic etches in some of the contact regions.

Abstract: Integrated circuits, as well as methods of their formation, include a first conductive structure at a first level of the integrated circuit, a second conductive structure at a second level of the integrated circuit, a first conductor at a third level of the integrated circuit between the first level and the second level, a second conductor at the third level and parallel to the first conductor, and a third conductor at the third level and parallel to the first conductor and to the second conductor. The first conductive structure is in physical and electrical contact with the first conductor and the second conductor. The second conductive structure is in physical and electrical contact with the second conductor and the third conductor.

Abstract: A method of forming an interconnection structure is disclosed, including providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure includes a conductive material and is adjoined to the first pad.

Abstract: Methods of fabricating a semiconductor device are provided. The methods may include forming a lower mold layer on a substrate that includes first and second regions, forming first and second intermediate mold patterns on the first and second regions, respectively, forming first spacers on sidewalls of the first and second intermediate mold patterns, etching the lower mold layer to form first and second lower mold patterns on the first and second regions, respectively, and etching the substrate to form active patterns and dummy patterns on the first and second regions, respectively. A first distance between a pair of the first intermediate mold patterns may be greater than a second distance between a pair of the second intermediate mold patterns, and the second lower mold patterns may include at least one first merged pattern, whose width is substantially equal to the second distance.