Abstract: A method of fabricating an epitaxial layer includes providing a substrate. The substrate is etched to form at least a recess within the substrate. A surface treatment is performed on the recess to form a Si—OH containing surface. An in-situ epitaxial process is performed to form an epitaxial layer within the recess, wherein the epitaxial process is performed in a hydrogen-free atmosphere and at a temperature lower than 800° C.

Abstract: A disclosed film deposition apparatus includes a turntable including a substrate receiving area; a first reaction gas supplier for supplying a first reaction gas to a surface of the turntable having the substrate receiving area; a second reaction gas supplier, arranged away from the first reaction gas supplier along a circumferential direction of the turntable, for supplying a second reaction gas to the surface; a separation area located along the circumferential direction between a first process area of the first reaction gas and a second process area of the second reaction gas; a separation gas supplier for supplying a first separation gas to both sides of the separation area; a first heating unit for heating the first separation gas to the separation gas supplier; an evacuation opening for evacuating the gases supplied to the turntable; and a driver for rotating the turntable in the circumferential direction.

Abstract: Methods, systems, and devices which result from, or facilitates, convenient processing of partial dies of a semiconductor chip in a lithography process are disclosed. Embodiments utilize an exposure through an imprint-style template which does not come in physical contact with the partial die. In one embodiment, a semiconductor process is disclosed which has at least one full die and at least one partial die. The semiconductor chip is fabricated, in part, by using an etching process which utilizes an imprint template configured to be exposed to the at least one full die when the imprint template is in contact with resist which has been dispensed onto the at least one full die. Further, at least one partial die of the semiconductor chip is configured to be exposed to the imprint template without the template contacting resist dispensed onto the at least one partial die.

Abstract: To provide a curable composition which is sufficiently cured even without a heating step at high temperature and from which a low dielectric constant cured film excellent in the solvent resistance is obtained. A curable composition comprising a fluorinated polyarylene prepolymer (A) having a crosslinkable functional group, a compound (B) having a number average molecular weight of from 140 to 5,000, having at least two crosslinkable functional groups and having no fluorine atoms, a copolymer (C) having the following units (c1) and (c2) and a radical polymerization initiator (D): unit (c1): a unit having a fluoroalkyl group having at most 20 carbon atoms, which may have an etheric oxygen atom between carbon atoms, and having no crosslinkable functional group; unit (c2): a unit having a crosslinkable functional group.

Abstract: Methods of polymer deposition for forming reduced critical dimensions are described. In one embodiment, a substrate is provided into a chamber, the substrate having a patterned layer disposed on an underlying layer formed thereon. The patterned layer includes a plurality of openings, each opening having a sidewall, a bottom, and a critical dimension. A gas mixture is provided into the chamber, the gas mixture having an etching gas and a polymer control gas. The polymer control gas includes a polymerizing fluorocarbon CxFy gas and a C—H bond containing gas. A plasma is formed with the gas mixture and a conformal polymer layer is deposited in the presence of the plasma on the patterned layer to form a reduced critical dimension in each opening. The reduced critical dimension is smaller than the corresponding critical dimension of the opening.

Abstract: A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the presence of a hydrogen-rich gas to react the oxygen in the ruthenium oxide with hydrogen, which results in a ruthenium metal layer. By varying the oxygen flow rate during the formation of ruthenium oxide, a ruthenium metal layer having various degrees of smooth and rough textures can be formed.

Abstract: Forming conformal platinum-zinc films for semiconductor devices is described. In one example, a conformal film is formed by heating a substrate in a reaction chamber, exposing a desired region of the substrate to a precursor that contains platinum, purging excess precursor from the chamber, exposing the desired region of the substrate to a co-reactant containing zinc to cause a reaction between the precursor and the co-reactant to form a platinum zinc film on the desired region, and purging the chamber of excess reaction by-products.

Abstract: A pressure control valve assembly of a plasma processing chamber in which semiconductor substrates are processed includes a housing having an inlet, an outlet and a conduit extending between the inlet and the outlet, the inlet adapted to be connected to an interior of the plasma processing chamber and the outlet adapted to be connected to a vacuum pump which maintains the plasma processing chamber at desired pressure set points during rapid alternating phases of processing a semiconductor substrate in the chamber. A fixed slotted valve plate having a first set of parallel slots therein is fixed in the conduit such that gasses withdrawn from the chamber into the conduit pass through the first set of parallel slots. A movable slotted valve plate having a second set of parallel slots therein is movable with respect to the fixed slotted valve plate so as to adjust pressure in the chamber.

Abstract: A composition includes a boron-containing hydrogen silsesquioxane polymer having a structure that includes: silicon-oxygen-silicon units, and oxygen-boron-oxygen linkages in which the boron is trivalent, wherein two silicon-oxygen-silicon units are covalently bound by an oxygen-boron-oxygen linkage therebetween.

Abstract: A plasma processing apparatus has a circular chamber having an opening portion which serves as a plasma ejection port surrounded by a dielectric member, a gas supply pipe for introducing gas into the inside of the chamber, a coil provided in the vicinity of the chamber, a high-frequency power supply connected to the coil, and a base material mounting table.

Abstract: According to one embodiment, the thin film forming apparatus includes a boat capable of holding two wafers, in each of which a cutout portion is provided in an outer peripheral edge portion, in a groove portion for holding a wafer in a state where back surfaces face each other. Moreover, the thin film forming apparatus includes a reactor that accommodates the boat and form a coating on each of surfaces of the two wafers by a vapor deposition reaction. The positions in the groove portion, at which the two wafers are held, respectively, are displaced in a direction parallel to the surfaces of the wafers.

Abstract: One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.

Abstract: A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.

Abstract: A substrate processing apparatus comprises a processing chamber for storing a substrate and performing a specified processing on the substrate, a substrate holding jig for holding the substrate in the processing chamber, a placement stand capable of moving the substrate holding jig inside and outside the processing chamber while mounting the substrate holding jig, a substrate holding jig movement mechanism for moving the substrate holding jig to a location different from the placement stand while holding the substrate holding jig, and a substrate holding jig movement suppression mechanism for suppressing vertical and horizontal movement of the substrate holding jig in order to keep the substrate holding jig mounted on the placement unit of the substrate holding jig movement mechanism.

Abstract: A holding device adapted for holding a mask and a substrate during processing is described. The holding device includes a substrate carrier adapted for carrying the substrate; and a mask for masking the substrate, wherein the mask is releasably connected to the substrate carrier; wherein the substrate carrier or the mask has at least one recess adapted for receiving a cover for covering the substrate carrier during deposition.

Abstract: A method of fabrication or manufacture at micrometer and nanometer scale by spatially selective deposition of chemical substances so as to form a solid phase array on a substrate (10) which includes the steps of defining a region (15) on the substrate by forming an electrostatic charge on that region which is different from the electrostatic charge on other regions of the substrate such as by formation of a latent electrostatic image thereon, applying an emulsion to the substrate. The emulsion (16) has an electrically charged discontinuous phase and a component to be selectively deposited carried in or comprising the discontinuous phase. The discontinuous phase of the emulsion is attracted to the preselected region by attraction by the electrostatic charge on the region and deposition obtained with or without reaction. The electrostatic image may be formed by the use of photoconductor.

Abstract: To provide a substrate processing apparatus, including: a plurality of process chambers in which a prescribed number of each type of substrates is processed; and a controller configured to decide the number of dummy substrates so that the number of the dummy substrates used in each process chamber is approximately the same between the process chambers, when the number of the dummy substrates used in each process chamber is decided so that the number of each type of substrates used in each process chamber reaches the prescribed number.

Abstract: The method for forming wavelike coherent nanostructures by irradiating a surface of a material by a homogeneous flow of ions is disclosed. The rate of coherency is increased by applying preliminary preprocessing steps.

Abstract: Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.

Abstract: The invention relates to a polymer composition with improved DC electrical properties, to the use of the composition for producing a cable layer and to a cable surrounded by at least one layer comprising the polymer composition.

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.

Abstract: A curable adhesive composition is disclosed comprising: at least one free radically polymerizable oligomer component; optionally at least one diluent monomer; at least one perfluorinated ether monomer; and a photoinitiator. The curable liquid adhesive is easily removable with low force and low adhesive transfer.

Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.

Abstract: According to an embodiment, a method of forming a film is provided. In the method of forming a film, a reversed pattern which is the reverse of a desired layout pattern is formed on a first substrate. Subsequently, a pattern material of the desired layout pattern is supplied to a second substrate as a reversal material. Thereafter, the reversed pattern is brought into contact with the reversal material such that the reversed pattern faces the reversal material, so that the reversed pattern is filled with the reversal material by a capillary phenomenon.

Abstract: The inventive concept provides methods of manufacturing three-dimensional semiconductor devices. In some embodiments, the methods include forming a stack structure including sacrificial layers and insulation layers, forming a trench penetrating the stack structure, forming a hydrophobic passivation element on the surfaces of the insulation layers that were exposed by the trench and selectively removing the sacrificial layers.

Abstract: A mold having an open interior volume is used to define patterns. The mold has a ceiling, floor and sidewalls that define the interior volume and inhibit deposition. One end of the mold is open and an opposite end has a sidewall that acts as a seed sidewall. A first material is deposited on the seed sidewall. A second material is deposited on the deposited first material. The deposition of the first and second materials is alternated, thereby forming alternating rows of the first and second materials in the interior volume. The mold and seed layer are subsequently selectively removed. In addition, one of the first or second materials is selectively removed, thereby forming a pattern including free-standing rows of the remaining material. The free-standing rows can be utilized as structures in a final product, e.g., an integrated circuit, or can be used as hard mask structures to pattern an underlying substrate. The mold and rows of material can be formed on multiple levels.

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.

Abstract: A device having three evaporation sources and a unit for moving the respective evaporation sources in one chamber is used, whereby it becomes possible to increase efficiency of use of an evaporation material. Consequently, manufacturing cost can be reduced, and a uniform thickness can be obtained over an entire surface of a substrate even in the case in which a large area substrate is used.

Abstract: Methods for depositing metal-polymer composite materials atop a substrate are provided herein. In some embodiments, a method of depositing a metal-polymer composite material atop a substrate disposed in a hot wire chemical vapor deposition (HWCVD) chamber may include flowing a current through a plurality of filaments disposed in the HWCVD chamber, the filaments comprising a metal to be deposited atop a substrate; providing a process gas comprising an initiator and a monomer to the HWCVD chamber; and depositing a metal-polymer composite material on the substrate using species decomposed from the process gas and metal atoms ejected from the plurality of filaments.

Abstract: A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.

Abstract: A plasma processing method includes holding a wafer on a holding stage, generating plasma inside the processing chamber by a plasma generator to define a first processing region having an electron temperature higher than a predetermined value and a second processing region having an electron temperature lower than the predetermined value, moving the holding stage for the wafer to be positioned in the first processing region, performing the plasma processing of the wafer positioned in the first processing region, moving the holding stage for the wafer to be positioned in the second processing region, and stopping to generate plasma when the wafer is positioned in the second processing region after completion of the plasma processing.

Abstract: A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with thermal control features such as trenches which form thermal barriers having lower thermal conductivity than surrounding portions of the carrier. These thermal control features promote a more uniform temperature distribution across the wafer surfaces and across the carrier top surface.

Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

Abstract: Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.

Abstract: A pattern transfer apparatus according to one embodiment includes a transfer region selecting part that performs operation in which when performing pattern transfer from a template provided with N transfer regions (N is an integer of 2 or larger) to a transferring substrate a plurality of times, 1 to N?1 transfer regions, which are to be used to perform the transfer to regions of the transferring substrate corresponding to part of the N transfer regions, are selected such that the number of the transfer to be performed using each of the N transfer regions is evened out. ened out.

Abstract: A wafer holder and temperature controlling arrangement has a metal circular wafer carrier plate, which covers a heater compartment. In the heater compartment a multitude of heater lamp tubes is arranged, which directly acts upon the circular wafer carrier plate. Latter is drivingly rotatable about the central axis. A wafer is held on the circular wafer carrier plate by means of a weight-ring residing upon the periphery of a wafer deposited on the wafer carrier plate.

Abstract: A method for size selection of nanostructures comprising utilizing a gas-expanded liquids (GEL) and controlled pressure to precipitate desired size populations of nanostructures, e.g., monodisperse. The GEL can comprise CO2 antisolvent and an organic solvent. The method can be carried out in an apparatus comprising a first open vessel configured to allow movement of a liquid/particle solution to specific desired locations within the vessel, a second pressure vessel, a location controller for controlling location of the particles and solution within the first vessel, a inlet for addition of antisolvent to the first vessel, and a device for measuring the amount of antisolvent added. Also disclosed is a method for forming nanoparticle thin films comprising utilizing a GEL containing a substrate, pressurizing the solution to precipitate and deposit nanoparticles onto the substrate, removing the solvent thereby leaving a thin nanoparticle film, removing the solvent and antisolvent, and drying the film.

Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.

Abstract: A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.

Abstract: The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first species monolayer is discontinuously formed over the substrate. The substrate having the discontinuous first species monolayer is exposed to a gaseous second precursor different from the first precursor effective to react with the first species to form a second species monolayer, and effective to form a reaction product of the second precursor with substrate material not covered by the first species monolayer. The substrate having the second species monolayer and the reaction product is exposed to a third gaseous substance different from the first and second precursors effective to selectively remove the reaction product from the substrate relative to the second species monolayer. Other implementations are contemplated.

Abstract: Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.

Abstract: A microfabricated device is fabricated by depositing a first metal layer on a substrate to provide a first electrode of an electrostatic actuator, depositing a first structural polymer layer over the first metal layer, depositing a second metal layer over said first structural polymer layer to form a second electrode of the electrostatic actuator, depositing an insulating layer over said first structural polymer layer, planarizing the insulating layer, etching the first structural polymer layer through the insulating layer and the second metal layer to undercut the second metal layer, providing additional pre-formed structural polymer layers, at least one of which has been previously patterned, and finally bonding the additional structural layers in the form of a stack over the planarized second insulating layer to one or more microfluidic channels. The technique can also be used to make cross over channels in devices without electrostatic actuators, in which case the metal layers can be omitted.

Abstract: A process for forming nanostructures comprises generating charged nanoparticles with an electrospray system and introduction of the charged nanoparticles to a substrate, so that the particles adhere to the substrate in order to form the desired structure. The charged nanoparticles may be directed to a target position by at least one deflector in the electrospray apparatus, which may also include a column optic system. The adhered nanoparticles may be sintered to form the structure. The electrospray apparatus may be single source, multi-source injection, or multi-source selection. An array of electrospray apparatuses with deflectors may be used concurrently to form the structure.

Abstract: A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line.

Abstract: A method is developed to crystallize amorphous silicon (a-Si) thin films, in cold environment, by combining microwave-absorbing materials (MAM) and microwave irradiation. The MAM is set on top or around of the a-Si thin film. MAM composes of dielectric, magnetic, semiconductor, ferroelectric and carbonaceous material oxides, carbides, nitrides and borides, which will absorb and concentrate electric or magnetic field of the microwave. The microwave frequency is selected from 1 to 50 GHz, at a power density not less than 5 W/cm2. Temperature rise of the MAM is monitored and controlled by an optical pyrometer to be less than 600° C., and better be within 400-500° C. The application of MAM at patterned local areas leads to localized heating and crystallization of a-Si film right at the patterns to facilitate manufacture of semiconductor devices.

Abstract: Embodiments of the invention provide methods for forming dielectric materials on a substrate. In one embodiment, a method includes exposing a substrate surface to a first oxidizing gas during a pretreatment process, wherein the first oxidizing gas contains a mixture of ozone and oxygen having an ozone concentration within a range from about 1 atomic percent to about 50 atomic percent and forming a hafnium-containing material on the substrate surface by exposing the substrate surface sequentially to a deposition gas and a second oxidizing gas during an atomic layer deposition (ALD) process, wherein the deposition gas contains a hafnium precursor, the second oxidizing gas contains water, and the hafnium-containing material has a thickness within a range from about 5 ? to about 300 ?. In one example, the hafnium-containing material contains hafnium oxide having the chemical formula of HfOx, whereas x is less than 2, such as about 1.8.

Abstract: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.