Electrolytic Erosion Of A Workpiece For Shape Or Surface Change (e.g., Etching, Polishing, Etc.) (process And Electrolyte Composition) Patents (Class 205/640)
  • Patent number: 5893967
    Abstract: An impedance-assisted electrochemical method is employed for selectively removing certain material from a structure without significantly electrochemically removing certain other material of the same chemical type as the removed material.
    Type: Grant
    Filed: June 30, 1997
    Date of Patent: April 13, 1999
    Assignee: Candescent Technologies Corporation
    Inventors: N. Johan Knall, Christopher J. Spindt, Gabriela S. Chakarova, Duane A. Haven, John M. Macaulay, Roger W. Barton, Maria S. Nikolova, Peter C. Searson
  • Patent number: 5882491
    Abstract: The invention relates to an electrode for electrochemical machining. An electrode comprising a plurality of electrode segments separated by insulating material. As desired, different voltages are applied to each of the electrode segments giving control over the amount of material locally removed from the metal piece. The invention also relates to a method of electrochemical machining.
    Type: Grant
    Filed: October 21, 1997
    Date of Patent: March 16, 1999
    Assignee: SKF Industrial Trading & Development Company B.V.
    Inventor: Frank Peter Wardle
  • Patent number: 5879533
    Abstract: The invention relates to electrochemical machining of metal pieces, and, in particular, rings of bearings, in a controlled way. To achieve this process, parameters, such as current, are actively controlled. This allows the raceway to be completed sooner and with a smoother, more circular surface. In addition the active control makes the formation of more complex forms possible and is suitable for the cheap manufacture of trilobed raceways.
    Type: Grant
    Filed: October 21, 1997
    Date of Patent: March 9, 1999
    Assignee: SKF Industrial Trading & Development Company B. V.
    Inventor: Frank Peter Wardle
  • Patent number: 5863233
    Abstract: A method for forming a field emitter structure. In one embodiment, the present invention creates a structure having a cavity formed into an insulating layer overlying a first electrically conductive layer. The present invention also creates a second electrically conductive layer with an opening formed above the cavity in the insulating layer. The present embodiment deposits a layer of electron emissive material directly onto the second electrically conductive layer without first depositing an underlying lift-off layer such that the electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element within the cavity. The present invention applies a first potential to the first electrically conductive layer, such that the first potential is imparted to the electron emissive element formed within the cavity.
    Type: Grant
    Filed: April 30, 1997
    Date of Patent: January 26, 1999
    Assignee: Candescent Technologies Corporation
    Inventors: John D. Porter, Gabriela S. Chakarova, N. Johan Knall, Christopher J. Spindt
  • Patent number: 5820744
    Abstract: Electrochemical machining (ECM) techniques utilizing real-time parameter monitoring, alarms and feedback control for improved machining of a workpiece are disclosed. The ECM device utilizes one or more cathodes, an electrolyte and a positively charged workpiece to achieve electrolytic action. A number of controlling variables, such as cathode feed rate, electrolyte flow rate and voltage, are balanced in response to measured system parameters. The following parameters are preferably monitored in order to adjust the controlling variables: the drive parameters of feed rate and cathode depth; the pump parameters of flow rate and pressure; and the power components of voltage and current. The flow rate in each of the cathodes, or a corresponding Reynolds number, is preferably utilized to provide an alarm to the operator if a statistically significant change in flow is detected.
    Type: Grant
    Filed: September 30, 1996
    Date of Patent: October 13, 1998
    Assignee: Doncasters, Turbo Products Division
    Inventors: Clifton Vedantus Edwards, Frank P. Simkowski
  • Patent number: 5804052
    Abstract: The invention relates to a method for continuous uniform electrolytic metallizing or etching of metal surfaces, and to a device suitable for carrying out this method. The invention is particularly suitable for treating printed circuit boards and conductive films in installations through which the metal surface being treated passes horizontally. In order to avoid metal coatings of differing thicknesses being deposited on narrow and wide conductor strips in printed circuit boards, according to the present invention operation is with movable, preferably rotating roller-shaped intermediate electrodes, which roll without short circuit at a very close effective distance above the metal surface being treated, or which contact the surface in a wiping manner. These intermediate electrodes are not electrically connected to the source of bath current, thus serving as bipolar electrodes, and are located between the surface being treated and a suitable counter-electrode.
    Type: Grant
    Filed: November 26, 1996
    Date of Patent: September 8, 1998
    Assignee: Atotech Deutschland GmbH
    Inventor: Reinhard Schneider
  • Patent number: 5785840
    Abstract: The present invention relates to a process for producing a surface structure, preferably on a cylinder, cylinder dressing, or roller of a printing machine, with a hard chromium coating which is galvanically produced and preferably ground to dimensional accuracy. The object of the invention is to develop a process which permits a surface structure to be produced on the hard chromium coating, which surface structure permits relatively high frictional forces between the contact points of the printing material and the coating of the cylinder of the printing machine. This is achieved in that the surface structure is produced in two process steps in sequence, a surface part structure being produced as a dot screen in an approximately even random distribution by means of a first material erosion process in a first process step, and the final surface structure being produced in a second process step by means of a second material erosion including the dot screen.
    Type: Grant
    Filed: April 26, 1996
    Date of Patent: July 28, 1998
    Assignee: Man Roland Druckmaschinen AG
    Inventor: Werner Sondergeld
  • Patent number: 5770036
    Abstract: For a condensed matter system containing a guest interstitial species such as hydrogen or its isotopes dissolved in the condensed matter host lattice, the invention provides tuning of the molecular orbital degeneracy of the host lattice to enhance the anharmonicity of the dissolved guest sublattice to achieve a large anharmonic displacement amplitude and a correspondingly small distance of closest approach of the guest nuclei. The tuned electron molecular orbital topology of the host lattice creates an energy state giving rise to degenerate sublattice orbitals related to the second nearest neighbors of the guest bonding orbitals. Thus, it is the nuclei of the guest sublattice that are set in anharmonic motion as a result of the orbital topology. This promotion of second nearest neighbor bonding between sublattice nuclei leads to enhanced interaction between nuclei of the sublattice.
    Type: Grant
    Filed: May 2, 1996
    Date of Patent: June 23, 1998
    Assignee: Massachusetts Institute of Technology
    Inventors: Brian S. Ahern, Keith H. Johnson, Harry R. Clark, Jr.
  • Patent number: 5766380
    Abstract: A method of fabricating an alloy sputtering target having fine precipitates of the second phase material and small, randomly oriented and uniform grains. The new method includes solution treatment to minimize second-phase precipitate size, cryo-deformation to prevent the formation of cubic structures and recrystallization to generate fine uniform grain sizes having a random orientation.
    Type: Grant
    Filed: November 5, 1996
    Date of Patent: June 16, 1998
    Assignees: Sony Corporation, Materials Research Corporation
    Inventors: Chi-Fung Lo, Darryl Draper
  • Patent number: 5766446
    Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer.
    Type: Grant
    Filed: March 5, 1996
    Date of Patent: June 16, 1998
    Assignee: Candescent Technologies Corporation
    Inventors: Christopher J. Spindt, Gabriela S. Chakarova, Maria S. Nikolova, Peter C. Searson, Duane A. Haven, Nils Johan Knall, John M. Macaulay, Roger W. Barton
  • Patent number: 5750403
    Abstract: On a first insulating film covering a substrate, wiring layer patterns are formed and thereafter, a second insulating film of plasma CVD--SiO.sub.2 or the like is formed thereon. A hydrogen silsesquioxane resin film having a flat surface is spin-coated on the second insulating film. Thereafter, the resin film is subjected to a first heat treatment in an inert gas atmosphere to convert the resin film into a silicon oxide film of a preceramic phase. On this silicon oxide film, a third insulating film of plasma CVD--SiO.sub.2 or the like is formed. Thereafter, a second heat treatment is performed to convert the silicon oxide film of preceramic phase into a silicon oxide film of a ceramic phase, while preventing fine size projections from being formed on the surface of the silicon oxide film. Thereafter, a second wiring layer is formed on the third insulating film. It is possible to planarize an interlevel insulating film and improve a process yield.
    Type: Grant
    Filed: July 12, 1996
    Date of Patent: May 12, 1998
    Assignee: Yamaha Corporation
    Inventors: Yushi Inoue, Takahisa Yamaha
  • Patent number: 5728286
    Abstract: A method of manufacturing an extrusion die for extruding a honeycomb structural body is disclosed. The extrusion die has a plurality of forming channels which have a shape in a traverse cross section corresponding to that of the honeycomb structural body and have a predetermined depth from a front side of the extrusion die toward a back side, and a plurality of opening holes for feeding raw materials which have a cylindrical shape extending independently from the back side toward the front side and are arranged at a cross portion and/or a straight portion of the forming channels in such a manner that each opening hole is opened and connected to the cross portion and/or straight portion of the forming channels.
    Type: Grant
    Filed: August 8, 1996
    Date of Patent: March 17, 1998
    Assignees: NGK Insulators, Ltd., Institute of Technology Precision Electrical Discharge Works
    Inventors: Kazuo Suzuki, Shoji Futamura
  • Patent number: 5715133
    Abstract: An electrochemical cell for etching a metal workpiece such as an aluminum foil, a method for etching the foil using the electrochemical cell, and foil thus produced is provided. The cell includes an etch tank having an etch electrolyte disposed therein and containing at least a first and a second compartment each containing (i)an etch electrolyte, (ii) a cathode plate, and (iii) an ion exchange membrane separator portion comprising an ion exchange polymeric material effective to substantially retard or prevent reduction of the oxidizing agent or agents present in the etch electrolyte, the first and second compartments being arranged in the etch tank with the ion exchange membrane separator portions in facing relationship one to the other; and a metal workpiece such asan aluminum foil anode present in the etch tank and disposed between each said first and second compartments.
    Type: Grant
    Filed: December 8, 1995
    Date of Patent: February 3, 1998
    Assignee: Philips Electronics North America Corporation
    Inventors: Albert Kennedy Harrington, Thomas Flavian Strange, Roland F. Dapo
  • Patent number: 5702586
    Abstract: Process of smoothing or polishing a diamond surface to reduce asperities reon to a level as low as about 20 nm from the horizontal by implanting the diamond surface with ions to form a non-diamond carbon damage layer on or below the diamond surface below the disparity depth and dissolving the non-diamond carbon by submerging the non-diamond carbon in a liquid having sufficient electric field to dissolve the non-diamond carbon.
    Type: Grant
    Filed: June 28, 1994
    Date of Patent: December 30, 1997
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Pehr E. Pehrsson, Michael L. Marchywka
  • Patent number: 5685969
    Abstract: A sensor arrangement having a substrate of doped silicon with channels in a principal face, a selective means for detecting a material, the selective means covering the principal face without filling the channels, and a measuring instrument for registering a physical quantity dependent on the influence of a material is provided. A catalytic layer is particularly used as selective means and a temperature sensor is particularly used as measuring instrument. Alternatively, the sensor arrangement is fashioned as a capacitor having a porous cooperating electrode. The channels are preferably produced by electrochemical etching.
    Type: Grant
    Filed: September 28, 1994
    Date of Patent: November 11, 1997
    Assignee: Siemens Aktiengesellschaft
    Inventors: Eckhardt Hoenig, Volker Lehmann, Ulf Buerker
  • Patent number: 5667666
    Abstract: A process for roughening a surface of a support for a lithographic printing plate in which an electric current is supplied between a metal web and an electrode facing the metal web in an electrolyte containing metal ions so that the metal web is subjected to electrochemical processing continuously, 1-20 pause sections are provided in the electrochemical processing and the time taken for passage through once processing pause section in the electrochemical processing is set to 1-30 seconds. With the process, the grain shape can be controlled with no troublesome condition setting to improve a scumming resistance without deteriorating a printing durability and a fill-in reduction so that the plate has superior performance.
    Type: Grant
    Filed: July 30, 1996
    Date of Patent: September 16, 1997
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Atsushi Matsuura, Akio Uesugi
  • Patent number: 5650059
    Abstract: A carbide substrate including a binder prepared to receive a cutting material such as a diamond coating thereon. The substrate is immersed in an electrolyte solution with the substrate acting as the anode thereby providing for an electro-polished substrate surface. The electro-polished substrate surface is then etched to substantially remove the binder phase of the carbide substrate, the etching being to a depth of up to about 15 microns. The resulting surface is susceptible for receiving a coating of the diamond cutting material.
    Type: Grant
    Filed: August 11, 1995
    Date of Patent: July 22, 1997
    Assignee: Credo Tool Company
    Inventors: Carl Shumaker, Zane D. Lockhart, Jr., Oscar H. Miller
  • Patent number: 5641391
    Abstract: Embodiments of the present invention provide a new method for producing a three dimensional object, particularly suited to microfabrication applications. The method includes the steps of providing a substrate with a conducting interface, an electrode having a feature or features that are small relative to the substrate, and a solution. The solution has a reactant that will either etch the substrate or deposit a selected material in an electrochemical reaction. The electrode feature is placed close to but spaced from the interface. A current is passed between the electrode and the interface, through the solution, inducing a localized electrochemical reaction at the interface, resulting in either the deposition of material or the etching of the substrate. Relatively moving the electrode and the substrate along a selected trajectory, including motion normal to the interface, enables the fabrication of a three dimensional object.
    Type: Grant
    Filed: May 15, 1995
    Date of Patent: June 24, 1997
    Inventors: Ian W. Hunter, Serge R. Lafontaine, John D. Madden
  • Patent number: 5556530
    Abstract: An array of electrodes for use in a flat panel display includes a plurality of electron emitters formed of polycrystalline or single crystalline silicon which has been selectively etched to form pores in the emitters. The electrode array is then electroplated in a methane plasma to deposit a carbon compound such as silicon carbide on the surfaces of the emitters and in the pores of the emitters. Each emitter has a generally flat electron emitting surface which facilitates a longer life for the electrode array, the porous structure of the emitters increasing the electron emission efficiency of the emitters in relatively low electric fields. The electrode array can be integral with a support substrate by anisotropically etching the substrate to form the emitters. A layered interconnect structure can be formed on a surface of the silicon substrate for providing the interconnect structure for the electrode array.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: September 17, 1996
    Assignee: Walter J. Finklestein
    Inventors: Walter Finkelstein, John H. Hall
  • Patent number: 5527435
    Abstract: The clamping system makes it possible to hold a free portion of a part during operations performed thereon. The device includes a plurality of blocks, each integral either with a pin or with a tube equipped with a small operating lever. The assembly is mounted in a gripping base between two shoulders. Gripping of each block in the clamping position is accomplished by a screw and two plates which make it possible to lock the assembly. The clamping system permits clamping of turbojet blades during the electrochemical machining or milling operation thereon.
    Type: Grant
    Filed: September 15, 1994
    Date of Patent: June 18, 1996
    Assignee: Societe Nationale d'Etude et de Construction de Moteurs d'Aviation "Snecma"
    Inventor: Jean-Philippe Arnau