Abstract: The back side recessed cooling surface of a shroud defining in part the hot gas path of a turbine is electrochemically machined to provide surface roughness elements and spaces therebetween to increase the heat transfer coefficient. To accomplish this, an electrode with insulating dielectric portions and non-insulating portions is disposed in opposition to the cooling surface. By passing an electrolyte between the cooling surface and electrode and applying an electrical current between the electrode and a shroud, roughness elements and spaces therebetween are formed in the cooling surface in opposition to the insulating and non-insulating portions of the electrode, hence increasing the surface area and heat transfer coefficient of the shroud.

Abstract: An electrochemical cell for use in electrochemical processes, such as plating processes, has a first electrode which extends circumferentially about at least a portion of an electrode chamber. The article being treated is the second electrode and is disposed within the chamber. Electrolyte is flowed between the two electrodes. Various construction details of the electrochemical cell are developed which facilitate a plating process. In one embodiment, a supply conduit to the electrode chamber has a swirler.

Abstract: The present invention provides a process for the manufacture of a substrate for use in the production of lithographic printing plates, the process comprising the steps of:

Abstract: A multiple station processing chamber used to deposit and/or remove a material on a semiconductor wafer is described. The multiple station processing chamber is comprised of two or more processing stations at which the wafer is exposed to a processing fluid. The processing stations are positioned within the chamber such that the wafer may be moved from station to station while remaining within the chamber. Each station of the multiple station processing chamber may have a fluid containment ring used for containment, disposal, and/or reuse of the electrolyte used to process the wafer at that particular processing station. The wafer is brought to the first processing station on a wafer support and exposed to a first processing fluid, which is then diverted into fluid containment ring for the first processing station. The wafer is then moved to a second processing chamber where the process is repeated with a second processing fluid.

Abstract: An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

Abstract: An apparatus 245 and method are provided for electrochemically etching grooves 235 in an inner surface 215 of a hub 160 to form at least one fluid dynamic bearing. The apparatus 245 includes a cathode 250 having an electrically conductive substrate 270 with an outer surface 275 that corresponds to the inner surface 215 of the hub 160. The outer surface 275 has raised lands 280 corresponding to areas in which the grooves 235 are to be formed in the inner surface 215 of the hub 160. A layer of electrically insulating material 285 covers the outer surface 275 of the substrate 270 between the raised lands 280 to reduce etching of the inner surface 215 of the hub 160 in corresponding areas.

Abstract: The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.

Abstract: A method is disclosed for treating the surface of tools made of tool steel, wherein primary carbides are embedded in the tool steel matrix. The thickness of the primary carbides disposed near the surface can be reduced by forming a surface which has point-wise recess; alternatively, the primary carbides can be completely removed. A hard material layer is deposited on this surface. The invention also describes tools made of tool steel, wherein primary carbides are embedded in the tool steel matrix. The primary carbides are significantly recessed, and a hard material layer is deposited thereon.

Abstract: A support made of an aluminum plate for a planographic printing plate is electrochemically roughened in an acidic aqueous solution in an electrolytic apparatus with plural cathodes and anodes arranged alternately on one side of the plate by applying a DC voltage. A soft starting zone which comprises at least one electrode connected to an electric power supply, which is separate from a main electric source, is provided. A current density of 0.01 to 100 A/dm2, which is lower than the current density used in any subsequent main roughening, is provided in the soft starting zone.

Abstract: The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate.

Abstract: A metal is provided on a polymeric component and the component is subjected to a removal process such as plasma or liquid etching in the presence of an electric field. The etchant selectively attacks the polymer at the boundary between the metal and the polymer, thereby forming gaps alongside the metal. A cover metal may be plated onto the metal in the gaps. The cover metal protects the principal metal during subsequent etching procedures.

Abstract: A process of separating low natural concentration protons in an electromagnetic separator having an ion source utilizes X-ray spectral analysis to distinguish areas of separated, increased-content of isotope enriched substance so as to treat them separately from areas of separated, low-content of isotope enriched substance.

Abstract: Apparatus for defining patterns electrochemically on conductive materials by forming the patterns as conductive features of a tool, providing insulative properties about the conductive features so the patterns are defined; then providing an immersive medium including an etchant or plating material for defining the pattern on a workpiece, providing an electric direct current so that the immersive medium is concentrated at desired locations defined by the conductive features on the conductive materials; and etching the conductive materials by applying the electric current in a quantity and for an elapsed time to etch or plate patterns in or on the conductive materials.

Abstract: An apparatus and method for an electrodeposition or electroetching system. A thin metal film is deposited or etched by electrical current through an electrolytic bath flowing toward and in contact with a target on which the film is disposed. Uniformity of deposition or etching is promoted, particularly at the edge of the target film, by, baffle and shield members through which the bath passes as it flows toward the target. The baffle has a plurality of openings disposed to control the localized current flow across the cross section of the workpiece/wafer. Disposed near the edge of the target, the shield member shapes the potential field and the current line so that it is uniform.

Abstract: A disclosed electroplanarization process involves “masking” certain regions of a wafer surface during electropolishing. The regions chosen for masking are features of relatively low aspect ratio (i.e., features that are wider than they are deep). The masking is accomplished with a material of relatively low ionic conductivity, which effectively slows or blocks transport of the metal ions produced during electropolishing. Examples of masking materials include concentrated phosphoric acid and certain polymers.

Abstract: A contact is disposed to come into contact with a metal layer formed on a substrate being treated, the contact being in contact with a surface being treated from an opposite surface through a through hole present in a substrate. Alternatively, a contact is disposed to come into contact with a metal layer formed on a substrate, the contact coming into contact at an approximate center of the substrate. Alternatively, a plurality of needle bodies are disposed to be in electrical contact with a metal layer of a substrate being treated, thereby power supply for electrolytic polishing/plating to a substrate being treated being implemented, without restricting to a periphery of a substrate, from a plurality of points on a surface thereof. Due to any one of these, liquid treatment equipment enables to improve uniformity in plane of an electric current sent to a surface being treated and of liquid treatment.

Abstract: Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.

Abstract: According to this dynamic pressure groove processing method, dynamic pressure grooves are formed in specified regions by electrochemical machining with the electrode of an electrode tool put close to a workpiece in the initial stage. Through this electrochemical machining, corners of land portions adjacent to the dynamic pressure grooves can be curved and smoothed. Next, by subjecting the workpiece to electrochemical machining with the electrode of the electrode tool put away from the workpiece, the land portions are to undergo weak electrochemical machining. Surface roughness of surfaces of the land portions can be reduced, and the curved corners of the land portions can be made smoother at the same time. Therefore, the abrasion resistance characteristic of the dynamic pressure grooves can be improved further than that achieved by the conventional electrochemical machining, allowing the abrasion resistance characteristic and reliability to be sufficiently improved.

Abstract: In a process for producing an aluminum support of a lithographic printing plate, the desired aluminum support is produced by imparting fine asperities to an aluminum plate and then roughening it electrochemically in an acidic aqueous solution. The roughened aluminum plate may be electropolished or chemically etched.

Abstract: A method for plating an electrically conductive substance, which includes the steps of contacting the electrically conductive substance with a plating agent in dilute solution, in which the plating agent is present in a concentration of 200 mM at most, and subjecting the plating agent adjacent to the electrically conducive substance to an electric field.

Abstract: A method and an apparatus for manufacturing a wire, particularly a sawtooth wire for all-steel sawtooth wire card clothings, wherein the surface of a wire-shaped intermediate product, such as a wire already provided with sawteeth, is smoothened in an electropolishing process in an electrolyte bath containing an electrolyte. A relative movement is produced between the electrolyte and the intermediate product during the electropolishing process. The apparatus includes a device for producing a relative movement between the electrolyte and the intermediate product contained in the electrolyte bath.

Abstract: A compliant wafer chuck for supporting a substrate in which an upper body of the chuck is allowed to tilt relative to the base.

Abstract: A process for coating a tungsten carbide base material substrate with CVD diamond film includes carburization and gas-assisted vaporization of cobalt from the surface with simultaneous recrystallization of surface grains of tungsten carbide to change their stoichiometry for improved adherence. Also disclosed is a WC—Co cutting tool having a relatively fine WC grain size and being coated with adherent CVD diamond.

Abstract: Provided is an electrolytic etching method for etching treating an object to be etched by an electrochemical reaction through an electrolyte between the object to be etched and an etching electrode, wherein the contact angle of the electrolyte to the object to be etched is not more than 70°. Thus provided is an electrolytic etching method that can etch the object in a non-contact manner, that can reduce the cost, the number of steps, and the processing time, and that can enhance the patterning accuracy.

Abstract: The present invention is directed to an apparatus 245 and method of etching grooves 235 in a shaft 175. In one embodiment, a cathode 250 is provided for electrochemically etching grooves 235 in an outer surface 215 of the shaft 175 to form a fluid dynamic journal bearing 225. The cathode 250 includes an electrically conductive cylindrical substrate 270 having an inner surface 275 that corresponds to the outer surface 215 of the shaft 175, the inner surface 275 having raised lands 280 corresponding to areas in which the grooves 235 are to be formed. A layer of electrically insulating material 285 covers the inner surface 275 of the substrate 270 between the lands 280 to preclude etching of the shaft 175 in areas between the lands. Preferably, the lands 280 are arranged so that the grooves 235 etched in the shaft 175 form one or more fluid dynamic bearings.

Abstract: An apparatus and method for electrochemically machining a texture on a metal bearing component. A ribbon is provided between an electrode and the metal bearing component. The ribbon is flexible, substantially non-conductive and provided with holes. While the ribbon is in direct contact with the metal bearing component, current is passed between the electrode and the metal bearing component. The pattern of the holes in the ribbon determines the pattern electrochemically machined on the surface of the metal bearing component. According to a preferred embodiment the ribbon is an endless belt.

Abstract: A method of shaping a tool comprises the steps of defining a shape of an article to be formed with the tool as a plurality of first elements; defining an initial shape of the tool as a plurality of second elements; determining an electric potential of each of the first and second elements; determining an equipotential line between the article and the initial shape of the tool based on the electric potential of the first and second elements; and forming the tool to have a shape coincident with the equipotential line.

Abstract: An electrochemical machining process is disclosed for forming multiple raised areas having multiple heights in a wall of predrilled holes within a workpiece. Positioned within each hole is an electrode coated with an insulating material in a pattern defining the raised areas to be formed in the wall of each respective hole. An electric current is applied from a power supply to each of the electrodes. A resistor is positioned between the power supply and at least one of the electrodes to vary the voltage passing through the electrode to vary the amount of material removed within that respective hole.

Abstract: We are familiar with etching printed circuit boards chemically by providing a copper board with a mask and etching copper away chemically at those points where the mask is not present. This is disadvantageous, e.g. from environmental standpoints, because the chemical liquid is increasingly enriched with copper, and, when the liquid has been used, it can no longer be employed and is also difficult to dispose of. The invention is based on the object of providing a method of either applying or removing conductive material electrically.

Abstract: A processing chamber for depositing and/or removing material onto/from a semiconductor wafer when the wafer is subjected to an electrolyte and in an electric field, and in which the electrolyte is introduced and/or evacuated from a closely confined containment region. A hollow sleeve is utilized to form a containment chamber for holding the electrolyte. A wafer residing on a support is moved vertically upward to engage the sleeve to form an enclosing floor for the containment chamber. One electrode is disposed within the containment chamber while the opposite electrode is comprised of several electrodes distributed around the circumference of the wafer. The electrodes are also protected from the electrolyte when the support is raised and engaged to the sleeve. In one embodiment, the support and the sleeve are stationary during processing, while in another embodiment, both are rotated or oscillated during processing.

Abstract: The current density with which the process is used is of essential importance for the economy of a method of electrolytically treating materials. Normally only low or medium current densities are used, as the speed of replacement of consumed materials in the direct vicinity of the surface of the material for treatment has a restrictive effect on the magnitude of the current density at which a usable process result can still be achieved. However, a low current density leads to long electrolysis times and to complex treatment installations.

Abstract: A semiconductor device having a non-doped polysilicon and a doped polysilicon containing group III element is selectively wet-etched the non-doped polysilicon by using an etching liquid. The etching liquid is an electrolytic liquid obtained on a side of a cathode electrode and the electrolytic liquid is formed by electrolyzing a liquid containing pure water added with ammonium ion.

Abstract: An electrochemical procedure is employed to selectively remove certain material from a structure without significantly electrochemically attacking other material of the same chemical type as the removed material. The material to be removed constitutes part or all of an electrically non-insulating region (52C). The material which is of the same chemical type as the removed material but which is not to be significantly electrochemically attacked during the removal procedure constitutes part or all of another electrically non-insulating region (52A) electrically decoupled from the first-mentioned non-insulating region. The electrochemical removal procedure is performed with an organically based electrolytic solution containing organic solvent and acid.

Abstract: A new method of creating thin free-standing pin hole-free hydrogen-selective palladium-bearing membranes that comprises thinning cold-rolled membranes by chemical etching or electrochemically electrolyzing of at least one membrane surface, and novel membranes produced thereby and including membranes with selected portions only thereof so thinned.

Abstract: In the electrochemical drilling of a hole completely through a workpiece, the present invention proposes operating the power supply in a current regulating mode. Initially, a hollow cathode is positioned adjacent to a workpiece in which one or more holes are to be drilled. An electrolyte is flowed through the cathode and against the workpiece. A constant electrical current is applied between the cathode and the workpiece across the electrolyte. Then the cathode is advanced at a constant rate toward the workpiece for the drilling of the hole(s), while maintaining the electrolyte flow and current substantially constant.

Abstract: A target for sputtering is subjected to a surface treatment process and special packaging after target manufacture for improved sputtering performance and process and yield by reducing particulates. The sputtering target is first surface treated to remove oxides, impurities and contaminants. The surface treated target is then covered with a metallic enclosure and, optionally, a passivating barrier layer. The metallic enclosure protects the target surface from direct contact with subsequently employed packaging material such as plastic bags, thereby eliminating sources of organic materials during sputtering operations. The surface treatment of the target removes deformed material, smearing, twins, or burrs and the like from the target surface, reducing "burn-in" or sputter conditioning time prior to production sputtering of thin films.

Abstract: Excess emitter material (52B) is removed in multiple steps during the fabrication of an electron-emitting device. A structure is initially provided in which a dielectric layer (44) overlies a non-insulating region (42), control electrodes (80 or 46/80) overlie the dielectric layer, openings (48/50) extend through the control electrodes and dielectric layer, electron-emissive elements (52A) formed with emitter material are situated in the openings, and an excess layer (52B) of the emitter material overlies the control electrodes and the dielectric layer. Portions of the excess emitter material overlying the dielectric layer in the spaces between the control electrodes are initially removed, preferably with etchant that directly attacks the emitter material. Portions (52C) of the excess emitter material overlying the control electrodes above the electron-emissive elements are subsequently removed to expose the electron-emissive elements.

Abstract: An aluminum support for a planographic printing plate is produced by (1) etching a surface of an aluminum plate chemically in an acidic or alkaline aqueous solution, (2) roughening the surface of the aluminum plate electrochemically in an acidic aqueous solution by applying DC voltage to form honeycomb pits having an average diameter from 0.5 to 10 .mu.m and to leave plateau portions, (3) etching the surface of the aluminum plate to render the plateau portions less than 10% of the surface, (4) roughening the surface of the aluminum plate electrochemically in an acidic aqueous solution using direct current or alternating current to form honeycomb pits having an average diameter from 0.1 to 2 .mu.m, (5) etching the surface of the aluminum plate chemically, and (6) anodizing the surface of the aluminum plate in an acidic solution. A low current density starting zone, or soft starting zone, may be provided at a first roughening stage.

Abstract: A processing chamber for depositing and/or removing material onto/from a semiconductor wafer when the wafer is subjected to an electrolyte and in an electric field. A hollow sleeve is utilized to form a containment chamber for holding the electrolyte. A wafer residing on a support is moved vertically upward to engage the sleeve to form an enclosing floor for the containment chamber. One electrode is disposed within the containment chamber while the opposite electrode is comprised of several electrodes distributed around the circumference of the wafer. The electrodes are also protected from the electrolyte when the support is raised and engaged to the sleeve. In one embodiment, the support and the sleeve are stationary during processing, while in another embodiment, both are rotated or oscillated during processing.

Abstract: A solar collector for absorbing solar energy and for conversation thereof into thermal energy includes an aluminum foil. One side only of the aluminum foil is blackened to an extent such that it will absorb solar energy, preferably to an extent approximating a black body. The blackening is achieved by subjecting the one surface of the aluminum foil to an electrochemical surface etching treatment.

Abstract: Disclosed is a method for reducing metal acid or salt evolved from electrolytic baths housed in electrolytic tanks during electrolytic operations. This method involves covering all of the surface of the electrolytic bath with a layer of shredded foam (e.g., polymeric foam, metal foam, glass foam, or vitreous material foam). The shredded foam is irregular in shape, lacking in uniform particle size, is inert to the electrolytic operation, and floats at the surface of the electrolytic bath. Desirably, the layer of shredded foam is about 3 to 4 inches (76-102 mm) in thickness. Examples of specific processes benefiting from the present invention are anodizing, electroplating, electrowinning, and electrophoresis operations.

Abstract: A method of making a needle electrode is such that a neck portion is formed in a thin wire made of a tungsten single crystal and the thin wire is cut at the neck portion by feeding an electric current in electrolyte.

Abstract: A method for preforming electrochemical processes requiring the application of electricity on features of a substrate includes shorting out the features using a shorting layer across connectors to which the features a in electrical communication. Electricity is then applied and the process is performed.

Abstract: A method of plating an aluminum alloy, of which the steps are small in number and the productivity is improved as compared with conventional zincate conversion or anodic oxidation methods and which attains a decrease in cost and obviates the use of mixed acids, and a plated aluminum alloy of which the coating has excellent adhesion, the method comprising the steps of carrying out anodic etching of a silicon-containing aluminum alloy to protrude silicon from the surface of the aluminum alloy, optionally carrying out anodic oxidation of the aluminum alloy on its surface from which the silicon is protruded, and plating the aluminum alloy, and the plated aluminum alloy containing silicon in a state where the silicon bridges the aluminum alloy and the plating layer.

Abstract: A method of three-dimensionally microcutting a metal material suitable for molds is provided. An electrolyte is interposed between a work piece which is made of a conductive material, and an electrode. Through application of an electrolysis voltage between the work piece and the electrode with the electrolyte interposed between them, a passive state film is formed on the surface of a to-be-cut part of the work piece. Then, the passive state film on the surface of the to-be-cut part of the work piece is cut.

Abstract: A method of performing electrochemistry processes on features and connectors of a substrate includes the application of a shorting layer across the connectors which are in electrical contact with the features, thereby shorting the features and creating an assemblage for which electricity is applied.

Abstract: The invention relates to a method for controlling an electroerosion machine wherein a control device is provided with technological parameter sets. These link one of a group of input parameters with suitable output parameters. The control device compares actual, current input parameters with groups of input parameters of these technological parameter sets. The control device then provides one or more technological parameter sets with groups of input parameters which are identical to or similar to the actual, current input parameters.

Abstract: A spring steel wire that has a tensile strength of at least 2,000 N/mm.sup.2 and a surface roughness of not more than 5 .mu.m in terms of Rz, and a spring steel wire that consists essentially of from 0.5 to 0.8% by weight of C, from 1.2 to 2.5% by weight of Si, from 0.4 to 0.8% by weight of Mn, from 0.7 to 1.0% by weight of Cr, from 0.005 to 0.030% by weight of N and at least two elements selected from the group consisting of from 0.1 to 0.6% by weight of V, from 0.05 to 0.50% by weight of Mo and from 0.05 to 0.50% by weight of W, with the balance being Fe and incidental impurities containing not more than 0.005% by weight of Al and not more than 0.005% by weight of Ti, said wire having a surface roughness of not more than 5 .mu.m in terms of Rz, as well as production processes therefor.

Abstract: An electrochemical cell for etching a metal workpiece such as an aluminum foil, a method for etching the foil using the electrochemical cell, and foil thus produced is provided. The cell includes an etch tank having an etch electrolyte disposed therein and containing at least a first and a second compartment each containing (i)an etch electrolyte, (ii) a cathode plate, and (iii) an ion exchange membrane separator portion having an ion exchange polymeric material effective to substantially retard or prevent reduction of the oxidizing agent or agents present in the etch electrolyte, the first and second compartments being arranged in the etch tank with the ion exchange membrane separator portions in facing relationship one to the other; and a metal workpiece such as an aluminum foil anode present in the etch tank and disposed between each said first and second compartments.

Abstract: A method and apparatus is described for producing a large number of identical parts from a bar of material by electrochemical machining without the intervention of an operator. The apparatus comprises a spindle for supporting the bar and periodically feeding it in the direction of its axis, and an electrochemical machining assembly comprising cathodes for shaping the leading end portion of the bar to form the part. After the part has been shaped, it is electrochemically cut from the bar, and the bar is advanced longitudinally by the spindle in order to proceed with the machining of the next part.