Material Of Active Region (epo) Patents (Class 257/E33.013)

  • Patent number: 8378367
    Abstract: A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units.
    Type: Grant
    Filed: April 16, 2010
    Date of Patent: February 19, 2013
    Assignee: Invenlux Limited
    Inventors: Chunhui Yan, Jianping Zhang
  • Publication number: 20130037796
    Abstract: A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed.
    Type: Application
    Filed: August 7, 2012
    Publication date: February 14, 2013
    Applicant: GENESIS PHOTONICS INC.
    Inventors: Jyun-De Wu, Yu-Chu Li
  • Publication number: 20130032829
    Abstract: An organic layer deposition apparatus, and a method of manufacturing an organic light-emitting display device by using the organic layer deposition apparatus. Here, the organic layer deposition apparatus includes a deposition source assembly. The deposition source assembly includes a first deposition source for discharging a deposition material, a second deposition material stacked on the first deposition source and discharging a different deposition material than the deposition material discharged from the first deposition source, a second deposition source nozzle unit disposed at a side of the second deposition source to face a deposition target and including a plurality of second deposition source nozzles, and a first deposition source nozzle unit disposed at the side of the second deposition source to face the deposition target and including a plurality of first deposition source nozzles formed to pass through the second deposition source.
    Type: Application
    Filed: June 1, 2012
    Publication date: February 7, 2013
    Inventors: Un-Cheol Sung, Mu-Hyun Kim
  • Patent number: 8368089
    Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: February 5, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akihiro Kojima, Hiroshi Koizumi, Yoshiaki Sugizaki, Tomomichi Naka, Yasuhide Okada
  • Patent number: 8367462
    Abstract: In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.
    Type: Grant
    Filed: April 21, 2011
    Date of Patent: February 5, 2013
    Assignee: Georgia Tech Research Corporation
    Inventors: Zhong L. Wang, Suman Das, Sheng Xu, Dajun Yuan, Rui Guo, Yaguang Wei, Wenzhuo Wu
  • Patent number: 8367449
    Abstract: A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm?3. The active layer is made of (AlyGa1-y)xIn1-xP (0<x?1, 0?y?1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of Ga1-xInxP (0?x<1). If d is the layer thickness of the second clad layer (nm) and Nd1 is the average dopant concentration of the second clad layer (cm?3), then d?1.2×Nd1×10?15+150 is satisfied.
    Type: Grant
    Filed: February 14, 2011
    Date of Patent: February 5, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Chiharu Sasaki, Wataru Tamura, Keita Akiyama
  • Patent number: 8368050
    Abstract: Embodiments of the present invention are directed to light-emitting diodes. In one embodiment of the present invention, a light-emitting diode comprises at least one quantum well sandwiched between a first intrinsic semiconductor layer and a second semiconductor layer. An n-type heterostructure is disposed on a surface of the first intrinsic semiconductor layer, and a p-type heterostructure is disposed on a surface of the second intrinsic semiconductor layer opposite the n-type semiconductor heterostructure. The diode also includes a metal structure disposed on a surface of the light-emitting diode. Surface plasmon polaritons formed along the interface between the metal-structure and the light-emitting diode surface extend into the at least one quantum well increasing the spontaneous emission rate of the transverse magnetic field component of electromagnetic radiation emitted from the at least one quantum well.
    Type: Grant
    Filed: January 30, 2008
    Date of Patent: February 5, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: David A. Fattal, Michael Renne Ty Tan
  • Publication number: 20130020594
    Abstract: A light-emitting device includes a semiconductor layer, a light-emitting stack structure formed on a first surface of the semiconductor layer, and a plurality of inverted pyramid structures formed on a second surface of the semiconductor layer opposite to the first surface. Each of the inverted pyramid structures has a sectional area increasing as each of the inverted pyramid structures is more extended in a vertical direction from the second surface.
    Type: Application
    Filed: March 31, 2011
    Publication date: January 24, 2013
    Applicant: CSSOLUTION CO., LTD.
    Inventors: Hyung-Soo Ahn, Min Yang, Hongju Ha
  • Publication number: 20130015425
    Abstract: A light-emitting element includes a substrate; a first light-emitting stacked layer formed on the substrate; a tunneling layer formed on the first light-emitting stacked layer; a second light-emitting stacked layer formed on the tunneling layer; and a contact layer formed on the second light-emitting stacked layer.
    Type: Application
    Filed: July 11, 2012
    Publication date: January 17, 2013
    Inventors: Yi-Chieh Lin, Rong-Ren Lee
  • Publication number: 20130017641
    Abstract: Provided is a method for manufacturing a light-emitting device (21) in which formation of an undesired hole in an organic EL layer is suppressed. The method is a method for manufacturing a light-emitting device including a supporting substrate (11), a plurality of partitions (17) extending in a prescribed line direction on the supporting substrate and provided at a prescribed interval in a column direction that is a different direction from the line direction, a first electrode (12), a second electrode (16), an organic electroluminescent (EL) layer, and a plurality of organic EL elements (22) provided in a concave portion (18) that is between the partitions. The method includes a step of supplying an ink including a material to be the organic EL layer to one concave portion a plurality of times by shifting the ink supply position in the column direction to supply the ink to each concave portion along the line direction and solidifying the ink to form the organic EL layer.
    Type: Application
    Filed: February 21, 2011
    Publication date: January 17, 2013
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventor: Tadashi Goda
  • Publication number: 20130009167
    Abstract: A light emitting diode is provided which includes an active region in combination with a current spreading layer; and a crystalline epitaxial film light extraction layer in contact with the current spreading layer, the light extraction layer being patterned with nano/micro structures which increase extraction of light emitted from the active region.
    Type: Application
    Filed: July 6, 2011
    Publication date: January 10, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Wei-Sin TAN, Alistair Paul CURD, Valerie BERRYMAN-BOUSQUET
  • Publication number: 20130009203
    Abstract: A semiconductor light-emitting element includes: a substrate; and a nitride semiconductor multilayer film provided on an upper surface of the substrate and including an active layer. A recess, a stepped portion, or a protruding portion is formed in an active layer or a layer that contacts a lower surface of the active layer. A ridge stripe, which has a front end facet and a rear end facet and serves as an optical waveguide, is formed in an upper part of the nitride semiconductor multilayer film. The distance from a lateral center of the ridge stripe to a lateral center of the recess, the stepped portion, or the protruding portion changes continuously or in stages from the front end facet toward the rear end facet. Bandgap energy of the active layer changes continuously or in stages from the front end facet toward the rear end facet.
    Type: Application
    Filed: September 15, 2012
    Publication date: January 10, 2013
    Applicant: Panasonic Corporation
    Inventor: Kenji ORITA
  • Publication number: 20130001637
    Abstract: A nitride semiconductor light-emitting device has an n-type nitride semiconductor layer, a lower light-emitting layer, an upper light-emitting layer, and a p-type nitride semiconductor layer in this order. The lower light-emitting layer is formed by alternately stacking a plurality of lower well layers, and a lower barrier layer sandwiched between the lower well layers and having a large bandgap than the lower well layer. The upper light-emitting layer is formed by alternately stacking a plurality of upper well layers, and an upper barrier layer sandwiched between the upper well layers and having a larger bandgap than the upper well layer. Thickness of the upper barrier layer in the upper light-emitting layer is smaller than thickness of the lower barrier layer in the lower light-emitting layer.
    Type: Application
    Filed: June 27, 2012
    Publication date: January 3, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Mayuko FUDETA
  • Publication number: 20120325310
    Abstract: Provided is a laminate which includes a transparent conductive film layer that is composed of an oxide thin film mainly composed of titanium oxide and contains an additional element such as niobium, and also contains an anatase phase having more excellent crystallinity and further has high refractive index and low resistivity by forming an optimal buffer layer on the substrate. Also provided are: a semiconductor light emitting element which comprises the laminate; and a functional element such as a solar cell, which includes the laminate.
    Type: Application
    Filed: March 1, 2011
    Publication date: December 27, 2012
    Inventors: Shigefusa Chichibu, Kouji Hazu, Tokuyuki Nakayama, Akikazu Tanaka
  • Patent number: 8338826
    Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: December 25, 2012
    Assignee: National Taiwan University
    Inventors: Jing-Shun Huang, Ching-Fuh Lin
  • Publication number: 20120319161
    Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.
    Type: Application
    Filed: February 27, 2012
    Publication date: December 20, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Toru GOTODA, Toshiyuki Oka, Shinya Nunoue, Kotaro Zaima, Hiroshi Ono, Hajime Nago
  • Patent number: 8334545
    Abstract: A quad pixel device is provided. Each pixel is an organic light emitting device (OLED), such that there is a first, second, third and fourth OLED. Each of the first, second, third and fourth OLEDs independently has a first electrode and a second electrode. Each OLED also independently has an organic emissive stack having an emitting material, disposed between the first and second electrodes; a first organic stack disposed between and in contact with the first electrode and the emissive stack; and a second organic stack disposed between and in contact with the second electrode and the emissive layer. The organic emissive stack of the first OLED, the organic emissive stack of the second OLED, the organic emissive stack of the third OLED, and the organic emissive stack of the fourth OLED each have different emissive spectra.
    Type: Grant
    Filed: August 9, 2010
    Date of Patent: December 18, 2012
    Assignee: Universal Display Corporation
    Inventors: Peter Levermore, Michael S. Weaver
  • Patent number: 8324615
    Abstract: A light-emitting element includes a first electrode, a first light-emitting layer formed over the first electrode, a second light-emitting layer formed on and in contact with the first light-emitting layer to be in contact therewith, and a second electrode formed over the second light-emitting layer. The first light-emitting layer includes a first light-emitting substance and a hole-transporting organic compound, and the second light-emitting layer includes a second light-emitting substance and an electron-transporting organic compound. Substances are selected such that a difference in LUMO levels between the first light-emitting substance, the second light-emitting substance, and the electron-transporting organic compound is 0.2 eV or less, a difference in HOMO levels between the hole-transporting organic compound, the first light-emitting substance, and the second light-emitting substance is 0.
    Type: Grant
    Filed: January 15, 2010
    Date of Patent: December 4, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Tsunenori Suzuki
  • Publication number: 20120299016
    Abstract: An organic layer deposition apparatus capable of protecting or preventing a patterning slit sheet from sagging, and a method of manufacturing an organic light-emitting display device by using the organic layer deposition apparatus.
    Type: Application
    Filed: May 10, 2012
    Publication date: November 29, 2012
    Inventor: Myong-Hwan Choi
  • Publication number: 20120299023
    Abstract: An organic layer deposition apparatus for forming an organic layer on a substrate includes: a deposition source configured to discharge a deposition material; a deposition source nozzle unit arranged at a side of the deposition source and including a plurality of deposition source nozzles; and a patterning slit sheet facing the deposition source nozzle unit and including a plurality of patterning slits and at least one spacer arranged between a pair of adjacent patterning slits of the plurality of patterning slits, the patterning slit sheet being smaller than the substrate in at least one of a first direction or a second direction perpendicular to the first direction, and the substrate is spaced apart from the organic layer deposition apparatus by a predetermined distance, and at least one of the substrate or the organic layer deposition apparatus is movable relative to the other.
    Type: Application
    Filed: May 10, 2012
    Publication date: November 29, 2012
    Inventors: Dong-Kyu LEE, Mu-Hyun Kim, Young-Rok Song, Sang-Pil Lee, Jung-Bae Song, Jong-Heon Kim, Byung-Su Kim, Yun-Mi Lee, Jae-Kwang Ryu
  • Patent number: 8319231
    Abstract: A display device includes a first organic electroluminescent element and a second organic electroluminescent element. The first and second organic electroluminescent elements have different luminescent colors. The first and second organic electroluminescent elements each include, in series, a first electrode, a first charge transport layer, a second charge transport layer, a light-emitting layer, and a second electrode. The first charge transport layer is common to the first and second organic electroluminescent elements. The second charge transport layer of the first organic electroluminescent element is different in thickness from the second charge transport layer of the second organic electroluminescent element. The concentration of a dopant material contained in the first charge transport layer is less than that of the second charge transport layer.
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: November 27, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventor: Norifumi Kajimoto
  • Patent number: 8319238
    Abstract: A light emitting device having a high degree of light extraction efficiency includes a substrate, and a light emitting structure disposed on one surface of the substrate, the substrate having an internal reformed region where the index of refraction differs from the remainder the substrate. The ratio of the depth of the reformed region (distance between the other surface of the substrate and the reformed region) to the thickness of the substrate is in a range of between 1/8 and 9/11.
    Type: Grant
    Filed: January 13, 2010
    Date of Patent: November 27, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Jae Lee, Seong-Deok Hwang, Yu-sik Kim, Sun-Pil Youn
  • Publication number: 20120292650
    Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.
    Type: Application
    Filed: August 29, 2011
    Publication date: November 22, 2012
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naoharu SUGIYAMA, Tomonari Shioda, Shigeya Kimura, Koichi Tachibana, Shinya Nunoue
  • Patent number: 8314429
    Abstract: A light emitting diode device has a gallium and nitrogen containing substrate with a surface region with an epitaxial layer overlying the surface region. Preferably the device includes a first active region overlying the surface and configured to emit first electromagnetic radiation having a wavelength ranging from about 405 nm to 490 nm; a second active region overlying the surface and configured to emit second electromagnetic radiation having a wavelength ranging from about 491 nm to about 590 nm; and a third region overlying the surface region and configured to emit third electromagnetic radiation having a wavelength ranging from about 591 nm to about 700 nm. A p-type epitaxial layer covers the first, second, and third active regions.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: November 20, 2012
    Assignee: Soraa, Inc.
    Inventors: James Raring, Rajat Sharma, Christiane Poblenz
  • Publication number: 20120280258
    Abstract: A nitride light-emitting diode is provided including a current spreading layer.
    Type: Application
    Filed: July 18, 2012
    Publication date: November 8, 2012
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Meng-hsin YEH, Jyh-Chiamg Wu, Shao-hua Huang, Chi-lun Chou, Hsing-wei Lu, Kechuang Lin
  • Patent number: 8304784
    Abstract: An illumination device having a plurality of light emitting diodes is provided. The light emitting diode may include a plurality of semiconductor layers at least one of which has a light emitting surface which may include a rough surface pattern having a pre-determined pattern. The pre-determined pattern may include one or more impurity regions with each region having a recess for guiding current across the light emitting surface and maximizing the emission of light (i.e. light intensity) of the illumination device. Each recess may include a lower internal portion having a bottom contact point located on a bottom surface and an upper internal portion integrally connected to the lower internal portion by a plurality of center contact points. The gaps created between the center and bottom contact points in adjacent recesses may act as spark gaps allowing for the current to flow through the entire light emitting surface.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: November 6, 2012
    Inventor: Andrew Locke
  • Publication number: 20120273776
    Abstract: One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.
    Type: Application
    Filed: May 5, 2012
    Publication date: November 1, 2012
    Inventors: Hiroko Abe, Satoshi Seo, Shunpei Yamazaki
  • Patent number: 8299493
    Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer includes an insulation layer including protrusions having a predetermined interval and a void between the protrusions of the insulation layer. The active layer is disposed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is disposed on the active layer.
    Type: Grant
    Filed: September 5, 2008
    Date of Patent: October 30, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyo Kun Son
  • Publication number: 20120267613
    Abstract: A heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the heterocyclic compound: wherein R1 and R2, and A and A? are defined as in the specification.
    Type: Application
    Filed: November 4, 2011
    Publication date: October 25, 2012
    Inventors: Jin-O Lim, Seok-Hwan Hwang, Young-Kook Kim, Hye-Jin Jung, Sang-Hyun Han, Yoon-Hyun Kwak, Sun-Young Lee, Chang-Ho Lee, Hee-Joo Ko, Jong-Hyuk Lee, Sung-Chul Kim
  • Publication number: 20120235139
    Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.
    Type: Application
    Filed: May 29, 2012
    Publication date: September 20, 2012
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: JING-SHUN HUANG, CHING-FUH LIN
  • Publication number: 20120238047
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: June 1, 2012
    Publication date: September 20, 2012
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Alexi Arango, Jonathan E. Halpert
  • Patent number: 8269234
    Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device comprises a plurality of compound semiconductor layers, an electrode layer, and a conductive support member. The compound semiconductor layers comprise a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. The electrode layer is disposed under the compound semiconductor layers. The conductive support member is disposed under the electrode layer. Herein, the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer.
    Type: Grant
    Filed: February 22, 2010
    Date of Patent: September 18, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ki Hyun Cho
  • Publication number: 20120228669
    Abstract: A large-format substrate with distributed control elements is formed by providing a substrate and a wafer, the wafer having a plurality of separate, independent chiplets formed thereon; imaging the wafer and analyzing the wafer image to determine which of the chiplets are defective; removing the defective chiplet(s) from the wafer leaving remaining chiplets in place on the wafer; printing the remaining chiplet(s) onto the substrate forming empty chiplet location(s); and printing additional chiplet(s) from the same or a different wafer into the empty chiplet location(s).
    Type: Application
    Filed: September 16, 2010
    Publication date: September 13, 2012
    Inventors: Christopher Bower, Etienne Menard, John Hamer, Ronald S. Cok
  • Publication number: 20120220063
    Abstract: The present invention relates to a vertical-structure semiconductor light emitting device and a production method thereof, more specifically, to a vertical-structure semiconductor light emitting device having a high-performance heat sink support comprising a thick metal film or metal foil. The vertical-structure semiconductor light emitting element produced in accordance with the present invention constitutes a highly reliable light emitting element with absolutely no thermal or mechanical damage since it has the high performance heatsink support and so suffers not fine micro- cracking and can be freely subjected to heat treatment and to post-processing including of a side-surface passivation thin film.
    Type: Application
    Filed: November 23, 2010
    Publication date: August 30, 2012
    Inventor: Tae Yeon Seong
  • Publication number: 20120217538
    Abstract: Disclosed is a nitride-based light emitting device using powders of a material having a Wurtzite lattice structure, such as ZnO powders. The nitride-based light emitting device includes a growth substrate, a lattice buffer layer formed on the growth substrate, and a light emitting structure formed on the lattice buffer layer and having a plurality of nitride layers stacked therein, wherein the lattice buffer layer is formed of powders of a material having a Wurtzite lattice structure. The lattice buffer layer is formed of ZnO powders, thereby minimizing occurrence of dislocations caused by a difference in lattice constant between a nitride layer and the growth substrate during growth of the nitride layer. A method of manufacturing the same is also disclosed.
    Type: Application
    Filed: July 25, 2011
    Publication date: August 30, 2012
    Applicants: Semimaterials Co., Ltd.
    Inventors: JOO JIN, Kun Park
  • Publication number: 20120217537
    Abstract: Disclosed is a method of manufacturing a nitride-based light emitting device, in which a patterned lattice buffer layer is formed to minimize dislocation density upon growth of a nitride layer and an air gap is formed to enhance brightness of the light emitting device. The method includes depositing a material having a Wurtzite lattice structure on a substrate to form a deposition layer, forming an etching pattern on a surface of the deposition layer to form a patterned lattice buffer layer, and growing a nitride layer on the patterned lattice buffer layer. During the growth of the nitride layer, the patterned lattice buffer layer is removed to form an air gap at a portion of the nitride layer from which the patterned lattice buffer layer is removed. A nitride-based light emitting device manufactured thereby is also disclosed.
    Type: Application
    Filed: July 25, 2011
    Publication date: August 30, 2012
    Applicants: Semimaterials Co., Ltd.
    Inventors: JOO JIN, Kun Park
  • Publication number: 20120217536
    Abstract: Disclosed is a nitride-based light emitting device capable of improving crystallinity and brightness. The nitride-based light emitting device includes a growth substrate, a lattice buffer layer formed on the growth substrate, a p-type nitride layer formed on the lattice buffer layer, a light emitting active layer formed on the p-type nitride layer, and an n-type ZnO layer formed on the light emitting active layer. The lattice buffer layer is formed of powders of a material having a Wurtzite lattice structure. The lattice buffer layer is formed of ZnO powders, thereby minimizing generation of dislocations during nitride growth. A method of manufacturing the same is also disclosed.
    Type: Application
    Filed: July 24, 2011
    Publication date: August 30, 2012
    Applicants: Semimaterials Co., Ltd.
    Inventors: Joo JIN, Kun Park
  • Publication number: 20120211753
    Abstract: In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.
    Type: Application
    Filed: December 16, 2011
    Publication date: August 23, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-Won KIM, Je-Hun LEE, Sung-Haeng CHO, Woo-Geun LEE, Kap-Soo YOON, Do-Hyun KIM, Seung-Ha CHOI
  • Patent number: 8247812
    Abstract: An object is to suppress deterioration in electric characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer, an impurity semiconductor layer is provided over the silicon layer, and a source electrode layer and a drain electrode layer are provided to be electrically connected to the impurity semiconductor layer.
    Type: Grant
    Filed: February 4, 2010
    Date of Patent: August 21, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichiro Sakata, Hiromichi Godo, Takashi Shimazu
  • Publication number: 20120193642
    Abstract: Semiconductor devices and methods for making such devices are provided. One such method may include forming a transparent diamond layer having a SiC layer coupled thereto, where the SiC layer has a crystal structure that is substantially epitaxially matched to the transparent diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer, and coupling a diamond substrate to at least one of the plurality of semiconductor layers such that the diamond support is oriented parallel to the transparent diamond layer. In one aspect such a method may further include electrically coupling at least one of a p-type electrode or an n-type electrode to at least one of the plurality of semiconductor layers.
    Type: Application
    Filed: February 1, 2012
    Publication date: August 2, 2012
    Inventor: Chien-Min Sung
  • Publication number: 20120187368
    Abstract: A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging.
    Type: Application
    Filed: January 19, 2012
    Publication date: July 26, 2012
    Applicant: West Virginia University
    Inventor: Xian-An Cao
  • Patent number: 8227282
    Abstract: A method of manufacturing a vertical light emitting diode includes: providing a first substrate; forming a lapping stop layer on the first substrate, the lapping stop layer being harder than the first substrate; depositing an epitaxial layer on the lapping stop layer; bonding a second substrate on the epitaxial layer; and removing the first substrate from the lapping stop layer.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: July 24, 2012
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Tzu-Chien Hung, Chia-Hui Shen
  • Patent number: 8222657
    Abstract: A light emitting apparatus may include a gate metal positioned between a p-type contact and an n-type contact, a gate oxide or other dielectric stack positioned below and attached to the gate metal, a Ge or Si1-zGez channel positioned below and attached to the gate dielectric stack, a buffer, and a silicon substrate positioned below and attached to the buffer. The light emitting apparatus may alternatively include a gate metal positioned between a p-type contact and an n-type contact, a wide bandgap semiconductor positioned below and attached to the gate metal, a Ge or Si1-zGez channel positioned below and attached to the wide bandgap semiconductor, a buffer, and a silicon substrate positioned below and attached to the buffer. Embodiments of the light emitting apparatus may be configured for use in current-injected on-chip lasers, light emitting diodes or other light emitting devices.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: July 17, 2012
    Assignee: The Penn State Research Foundation
    Inventors: Jian Xu, Somasundaram Ashok
  • Patent number: 8217397
    Abstract: The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer 1, a source electrode 2, a drain electrode 3, and a transparent conductive film 4, in which the source electrode 2 and drain electrode 3 are formed by patterning by means of dry etching and comprises an Al alloy thin film comprising 0.1 to 1.5 atom % of Si and/or Ge, 0.1 to 3.0 atom % of Ni and/or Co, and 0.1 to 0.5 atom % of La and/or Nd, and the thin film transistor is directly connected with the semiconductor layer 1.
    Type: Grant
    Filed: January 15, 2009
    Date of Patent: July 10, 2012
    Assignee: Kobe Steel, Ltd.
    Inventors: Mototaka Ochi, Nobuyuki Kawakami, Katsufumi Tomihisa, Hiroshi Goto
  • Publication number: 20120146087
    Abstract: A light-emitting device is disclosed. The light-emitting device comprises a substrate, an ion implanted layer on the substrate, a light-emitting stack layer disposed on the ion implanted layer, and an adhesive layer connecting the substrate with the light-emitting stack layer, wherein the adhesive layer comprises a thin silicon film disposed between the ion implanted layer and the light-emitting layer. This invention also discloses a method of manufacturing a light-emitting device comprising the steps of forming a light-emitting stack layer, forming a thin silicon film on the light-emitting stack layer, providing a substrate, forming an ion implanted layer on the substrate, and providing an electrode potential difference to form an oxide layer between the thin silicon film and the ion implanted layer.
    Type: Application
    Filed: February 23, 2012
    Publication date: June 14, 2012
    Applicant: Epistar Corporation
    Inventor: Chia-Liang HSU
  • Publication number: 20120149140
    Abstract: To provide a light-emitting element and a light-emitting device which can be designed and manufactured with redundancy. A light-emitting element of the invention includes a pair of electrode, and a layer containing a light-emissive substance between the pair of electrodes. The layer containing a light-emissive substance includes a layer containing a composite material, and the layer containing a composite material includes an organic compound and an inorganic compound. The concentration ratio of the organic compound to the inorganic compound changes periodically. The layer containing a composite maternal can be changed in electrical characteristics without changing the composition ratio of the organic compound to the inorganic compound in the layer or changing the kind of compounds used for the layer.
    Type: Application
    Filed: February 23, 2012
    Publication date: June 14, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hisao Ikeda, Junichiro Sakata, Satoshi Seo, Yuji Iwaki
  • Publication number: 20120147605
    Abstract: Disclosed is a light-emitting element comprises a substrate; a light-emitting stack layer disposed on the substrate; wherein the light-emitting stack layer comprises a first semiconductor layer, a first active layer disposed on the first semiconductor layer, a magnetic film layer disposed on the first active layer, a second active layer disposed on the magnetic film layer, and a second semiconductor layer disposed on the second active layer.
    Type: Application
    Filed: December 9, 2011
    Publication date: June 14, 2012
    Applicant: Epistar Corporation
    Inventor: Yen-Chih CHEN
  • Patent number: 8193545
    Abstract: A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1?xN layer on the first electrode layer, forming on the first InxGa1?xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: June 5, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Patent number: 8193011
    Abstract: A thin film deposition apparatus and an organic light-emitting display device by using the same. The thin film deposition apparatus includes an electrostatic chuck, a plurality of chambers; at least one thin film deposition assembly; a carrier; a first power source plug; and a second power source plug. The electrostatic chuck includes a body having a supporting surface that contacts a substrate to support the substrate, wherein the substrate is a deposition target; an electrode embedded into the body and applying an electrostatic force to the supporting surface; and a plurality of power source holes formed to expose the electrode and formed at different locations on the body.
    Type: Grant
    Filed: October 19, 2011
    Date of Patent: June 5, 2012
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Hee-Cheol Kang, Hyun-Sook Park, Jae-Kwang Ryu, Yong-Sup Choi, Yun-Mi Lee, Sang-Soo Kim
  • Patent number: 8193021
    Abstract: A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: June 5, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Hideto Sugawara