Formation Of Electrically Isolated Lateral Semiconductive Structure Patents (Class 438/400)
- And separate partially isolated semiconductor regions (Class 438/405)
- Bonding of plural semiconductive substrates (Class 438/406)
- Nondopant implantation (Class 438/407)
- With electrolytic treatment step (Class 438/408)
- Encroachment of separate locally oxidized regions (Class 438/410)
- Air isolation (e.g., beam lead supported semiconductor islands, etc.) (Class 438/411)
- With epitaxial semiconductor formation (Class 438/413)
- Combined with formation of recessed oxide by localized oxidation (Class 438/425)
- Refilling multiple grooves of different widths or depths (Class 438/427)
- And epitaxial semiconductor formation in groove (Class 438/429)
- And deposition of polysilicon or noninsulative material into groove (Class 438/430)
- Dopant addition (Class 438/433)
- Multiple insulative layers in groove (Class 438/435)
- Reflow of insulator (Class 438/438)
- Including nondopant implantation (Class 438/440)
- With electrolytic treatment step (Class 438/441)
- With epitaxial semiconductor layer formation (Class 438/442)
- Etchback of recessed oxide (Class 438/443)
- Preliminary etching of groove (Class 438/444)
- Utilizing oxidation mask having polysilicon component (Class 438/448)
- Dopant addition (Class 438/449)
- Plural oxidation steps to form recessed oxide (Class 438/452)
- And electrical conductor formation (i.e., metallization) (Class 438/453)