Abstract: Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

Abstract: A solar cell includes; a substrate; a first electrode disposed on the substrate, and including a first groove formed therein, a semiconductor layer disposed on the first electrode, and including a second groove formed therein, and a second electrode disposed on the semiconductor layer and connected to the first electrode via the second groove, wherein a third groove passing through the first electrode, the semiconductor layer, and the second electrode is formed in a first region, a fourth groove passing through only the semiconductor layer and the second electrode is formed in a second region, and the first region and the second region are alternately disposed along a direction of extension of the third groove.

Abstract: A photoelectric conversion module includes: a substrate having a light transmitting property and having a mounting surface; a photoelectric conversion element mounted on the mounting surface of the substrate; a cover member fixed to the substrate via a solder layer constituted by solder and forming, cooperatively with the substrate, an airtight chamber housing the photoelectric conversion element; and a solder adsorbing film provided near an area fixed to the substrate by the solder layer, in a surface, of the cover member, facing the mounting surface, the solder having an adhesive property to the solder adsorbing film.

Abstract: Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.

Abstract: A layout structure of a semiconductor integrated circuit is provided with which narrowing and breaking of metal interconnects near a cell boundary can be prevented without increasing the data amount and processing time for OPC. A cell A and a cell B are adjacent to each other along a cell boundary. The interconnect regions of metal interconnects from which to the cell boundary no other interconnect region exists are placed to be substantially axisymmetric with respect to the cell boundary, while sides of diffusion regions facing the cell boundary are asymmetric with respect to the cell boundary.

Abstract: The instant disclosure describes a photodetector that includes at least one portion of a semiconducting layer formed directly on at least a portion of a reflective layer and to be illuminated with a light beam, at least one pad being formed on the portion of the semiconducting layer opposite the reflective layer portion, wherein the pad and the reflective layer portion are made of a metal or of a negative permittivity material, the optical cavity formed between said at least one reflective layer portion and said at least one pad has a thickness strictly lower than a quarter of the ratio of the light beam wavelength to the optical index of the semiconducting layer, and typically representing about one tenth of said ratio.

Abstract: 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.

Abstract: A composite substrate for laser devices is disclosed having improved wave guiding properties, improved lattice matching, improved thermal expansion matching, and improved thermal conductivity. The composite substrate has an intermediate layer formed on a support substrate, and a seed layer formed on the intermediate layer. An active device layer is grown or attached to the seed layer, or to a light confinement layer on the seed layer. The intermediate layer may be formed directly on the support layer, or may be formed by thinning an attached wafer of the intermediate material, which is then thinned to a desired thickness.

Abstract: An image sensor device that includes a substrate and a plurality of color filters. The substrate includes a plurality of photo detectors (wherein a first portion of the plurality of photo detectors each has a lateral size that is smaller than that of each of a second portion of the plurality of photo detectors) and a plurality of contact pads which are electrically coupled to the photo detectors. The plurality of color filters are each disposed over one of the photo detectors. The plurality of photo detectors are configured to produce electronic signals in response to light incident through the color filters. A third portion of the plurality of photo detectors are laterally disposed between the first and second portions of the photo detectors, and each having a lateral size between those of the first and second portions of the photo detectors.

Abstract: A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a fluorocarbon gas and an additive gas. The remotely energized deposition gas is flowed into the process zone to deposit a low refractive index coating on the substrate.

Abstract: A detection apparatus includes a plurality of conversion elements, an interlayer insulating layer, and a covering layer. Each of the plurality of conversion elements includes an electrode electrically connected to a corresponding one of a plurality of switching elements and a semiconductor layer disposed on the electrode. The interlayer insulating layer is disposed so as to cover the plurality of switching elements and composed of an organic material, and has a surface including a first region and a second region located outside the first region. The electrodes are disposed on the surface of the interlayer insulating layer in the first region. The covering layer is disposed on the surface of the interlayer insulating layer in the second region and composed of an inorganic material.

Abstract: A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different from the copper is located at least between a first region and the first semiconductor layer, between the first region and the first insulator layer, and between the first region and the third insulator layer. A diffusion coefficient of the copper to a material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer.

Abstract: A capping system includes: a moving portion moving a stem, on which an optical semiconductor element is mounted, horizontally; a fixer fixing a cap having a window, on the stem; a camera taking an image of the cap and the stem from above the cap and the stem; a detector detecting whether the optical semiconductor element is present within a visual field of the camera; and a searching action controller controlling the moving portion to move the stem so the detector searches the optical semiconductor element. The searching action controller causes searching radially and outwardly from a search starting point.

Abstract: Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.

Abstract: Disclosed herein is an imaging device including: a pixel unit including a pixel disposed in a plane and a driving unit. The pixel includes an accumulating section configured to detect a physical quantity, and accumulate a charge corresponding to the physical quantity, a transfer section configured to transfer the charge from the accumulating section, a converting section configured to convert the charge into a voltage, an output section configured to output a signal of the voltage converted by the converting section, a reset section configured to reset the potential of the converting section, and a connecting section connected to the converting section. The driving unit is configured to transfer a signal for giving an instruction to transfer the charge, and a connecting signal for controlling connection and non-connection. The driving unit makes the charge transferred in a state of the converting sections being connected to each other.

Abstract: A solid-state imaging apparatus is provided. A solid-state imaging device chip is enclosed in a package having an optically transparent member. An adhesive layer is formed on an internal surface of the package, and a penetration hole is formed in a bottom part of the package to communicate with an open space in the package.

Abstract: The present disclosure involves a lighting instrument. The lighting instrument includes a board or substrate, for example, a printed circuit board. The lighting instrument also includes a plurality of light-emitting devices disposed on the substrate. The light-emitting devices may be light-emitting diode (LED) dies. The LED dies belong to a plurality of different bins. The bins are categorized based on the light output performance of the LED dies. In some embodiments, the LED dies may be binned based on the wavelength or radiant flux of the light output. The LED dies are distributed on the substrate according to a predefined pattern based on their bins. In some embodiments, the LED dies are bin-mixed in an interleaving manner.

Abstract: Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are also disclosed.

Abstract: A method of manufacturing a photoelectric conversion element, which is provided with a substrate, a first electrode film having first and second conductive films provided on the substrate, a metal compound film covering the first electrode film, a semiconductor film connected with the metal compound film, a second electrode film connected with the semiconductor film, and an insulating film covering and surrounding the substrate, the first electrode film, the semiconductor film, and the metal compound film, the method including: forming the first conductive film to be connected with the substrate and the second conductive film to be connected with the first electrode film; forming the second conductive film in a predetermined shape using wet etching after the forming of the first and second conductive films, and forming the metal compound film which covers the first electrode film after the forming of the metal compound film.

Abstract: A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.

Abstract: A method of fabricating an imaging array includes providing a single crystal silicon substrate and bonding the single crystal silicon substrate to an insulating substrate. One or more portions of an exposed surface of the single-crystal silicon substrate are removed to form a pattern of first areas having a first height measured from the insulating substrate and second areas having a second height measured from the insulating substrate. Photosensitive elements are formed on the first areas and readout elements are formed on the second areas. The single-crystal silicon substrate is treated by hydrogen implantation to form an internal separation boundary and a portion of the single-crystal silicon substrate is removed at the internal separation boundary to form the exposed surface.

Abstract: An image sensor includes an objective lens arranged on an optical axis; a substrate including a plurality of photoelectric conversion devices; and a micro lens layer including a plurality of micro lenses corresponding to each of the plurality of photoelectric conversion devices, respectively, wherein the plurality of micro lenses includes a central micro lens corresponding to a central portion of the objective lens, and an edge micro lens corresponding to an edge portion of the objective lens, and the plurality of micro lenses are configured such that focal lengths of the micro lenses increase from the central micro lens toward the edge micro lens.

Abstract: An organic photoelectric device includes a first electrode, a metal nanolayer contacting one side of the first electrode, an active layer on one side of the metal nanolayer, and a second electrode on one side of the active layer. An image sensor includes the organic photoelectric device.

Abstract: Disclosed are methods for producing chalcopyrite compound (e.g., copper indium selenide (CIS), copper indium gallium selenide (CIGS), copper indium sulfide (CIS) or copper indium gallium sulfide (CIGS)) thin films. The methods are based on solution processes, such as printing, particularly, multi-stage coating of pastes or inks of precursors having different physical properties. Chalcopyrite compound thin films produced by the methods can be used as light-absorbing layers for thin-film solar cells. The use of the chalcopyrite compound thin films enables the fabrication of thin-film solar cells with improved efficiency at low costs.

Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.

Abstract: An image pickup lens is provided that includes a substrate; resin layers formed on both respective opposite surfaces of the substrate; a lens portion formed on at least any one of the surfaces of the substrate; and a spacer formed on at least any one of the surfaces of the substrate at an area surrounding the lens portion.

Abstract: An optical sensor that is a transistor which includes a gate electrode including a semiconductor material where the carrier concentration is 1.0×1014/cm3 to 1.0×1017/cm3, an active layer including a semiconductor layer to form a channel by carriers of the same type as the gate electrode, a source electrode, a drain electrode, and a gate insulating film, wherein intensity of irradiated light is detected by a change in a value of current flowing between the source electrode and the drain electrode when the light is irradiated onto a depletion layer formed in the gate electrode; an optical sensor array, an optical sensor driving method, and an optical sensor array driving method are provided.

Abstract: A photoelectric conversion device provided with an electron transport layer having an excellent electron transport ability and having an excellent photoelectric conversion efficiency, and electronic equipment provided with such a photoelectric conversion device and having a high reliability are provided. A solar cell, to which the photoelectric conversion device is applied, has a first electrode provided on a substrate, a second electrode arranged opposite to the first electrode and retained on a facing substrate, an electron transport layer provided between these electrodes and positioned on the side of the first electrode, a dye layer being in contact with the electron transport layer, and an electrolyte layer provided between the electron transport layer and the second electrode and being in contact with the dye layer. The electron transport layer is constituted of a monocrystalline material of multiple oxide as a main component thereof.

Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.

Abstract: A conductive paste composition contains a source of an electrically conductive metal, a Ti—Te—Li oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and establish electrical contact between it and the device.

Abstract: A conductive paste composition contains a source of an electrically conductive metal, an alkaline-earth-metal boron tellurium oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor device substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and establish electrical contact between it and the device.

Abstract: The electro-optical device includes a semiconductor layer, a first metal layer and an electrical insulator layer disposed between the semiconductor layer and the first metal layer. The electrical insulator layer includes a silicon nitride layer so as to provide an interface between the first metal layer and the silicon nitride layer. The electro-optical device is configured to carry a plasmonic wave.

Abstract: A hole-based ultra-deep photodiode in a CMOS image sensor and an associated process are disclosed. A p-type substrate is grounded or connected to a negative power supply. An n-type epitaxial layer is grown on the p-type substrate, and is connected to a positive power supply. An ultra-deep p-type photodiode implant region is formed in the n-type epitaxial layer. Thermal steps are added to insure a smooth and deep doping profile.

Abstract: The present invention provides a photovoltaic module with bypass diodes that has a high electricity generating capacity per unit area and high productivity. This photovoltaic module includes a photovoltaic cell assembly in which a plurality of photovoltaic cells are electrically connected in series, and a diode assembly in which a plurality of diodes are formed on a substrate in the arrangement that is consistent with the arrangement of the photovoltaic cells to which the diodes are to be attached. The diode assembly is disposed on a non-light receiving side of the photovoltaic cells, and the diodes are electrically connected to the photovoltaic cells. The photovoltaic cell assembly and the diode assembly are sealed and united by a sealant.

Abstract: A photoelectric conversion module is disclosed. In one aspect, the photoelectric conversion module includes 1) first and second conductive substrates facing each other and 2) first and second grid electrodes formed between and respectively electrically connected to the first and second conductive substrates. The photoelectric conversion module also includes a first isolation electrode interposed between and contacting the first conductive substrate and the second grid electrode. The second grid electrode may have a top surface that tightly contacts the first isolation electrode so as to substantially prevent an electrolyte from permeating between the top surface of the second grid electrode and the first isolation electrode.

Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Abstract: Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer.

Abstract: A pinned photodiode structure with peninsula-shaped transfer gate which decrease the occurrence of a potential barrier between the photodiode and the floating drain, prevents loss of full well capacity (FWC) and decreases occurrences of image lag.

Abstract: It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer located on the electrode layer and comprising a chalcopyrite-based compound semiconductor of group I-III-VI and oxygen, and a second semiconductor layer located on the first semiconductor layer and forming a pn junction with the first semiconductor layer. In the photoelectric conversion device, the first semiconductor layer has a higher molar concentration of oxygen in a part located on the electrode layer side with respect to a center portion in a lamination direction of the first semiconductor layer than a molar concentration of oxygen in the whole of the first semiconductor layer.

Abstract: A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

Abstract: The present invention is a solar cell 500 comprising the substrate 510 made of a crystalline semiconductor, an i-type semiconductor layer 520a and an i-type semiconductor layer 520b each made of an amorphous semiconductor, and a first-conductivity type semiconductor layer 530 and a second-conductivity type semiconductor layer 540 each made of an amorphous semiconductor, in which by catalytic chemical vapor deposition in which catalyzers decompose raw gas when being heated by receiving an electric current, the i-type semiconductor layer 520a is formed on the principle plane 515a by the catalyzer placed at the position facing the principle plane 515a, the i-type semiconductor layer 520b is formed on the principle plane 515b by the catalyzer placed at the position facing the principle plane 515b are formed on the i-type semiconductor layer 520a and the i-type semiconductor layer 520b on the substrate 510.

Abstract: A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over a side of the photosensitive region and the substrate opposite an incoming radiation side of the photosensitive region and the substrate. The non-planar reflector layer is shaped and positioned to reflect uncaptured incident radiation back into the photosensitive region while avoiding optical cross-talk with an additional photosensitive region laterally separated within the substrate.

Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.

Abstract: A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Abstract: Embodiments of the present invention provide an integrated circuit system including a first active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having electrical components embodied therein, wherein the electrical components include at least one discrete passive component. The integrated circuit system also includes at least one electrical path coupling the first active layer and the second pre-fabricated layer.

Abstract: A self-powered photodetector is provided including: a photovoltaic sensor element for generating an electrical charge under exposure to electromagnetic radiation; a charge storage section for accumulating the electrical charge generated by the photovoltaic sensor element; an electrical load configured to be powered by the accumulated electrical charge from the charge storage section and outputs a signal in response thereto, the signal being analyzable to determine a measurement of the electromagnetic radiation; and a switch for controlling a flow of the accumulated electrical charge from the charge storage section to the electrical load for powering the electrical load. There is also provided a wireless receiver for analyzing a signal from the self-powered photodetector to provide a measurement of the electromagnetic radiation, a photodetector system including the self-powered photodetector and the wireless receiver, and a method of fabricating the self-powered photodetector.

Abstract: A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.

Abstract: A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer.

Abstract: Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type CIGS layer and an N type CIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.

Abstract: A solid-state imaging device with a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.