Characterized By Specified Shape Or Size Of Pn Junction Or By Specified Impurity Concentration Gradient Within The Device (epo) Patents (Class 257/E29.005)
- For controlling surface leakage or electric field concentration (EPO) (Class 257/E29.007)
- For controlling breakdown voltage of reverse biased devices (EPO) (Class 257/E29.008)
- With field relief electrode (field plate) (EPO) (Class 257/E29.009)
- By doping profile or shape or arrangement of the PN junction, or with supplementary regions (e.g., guard ring, LDD, drift region) (EPO) (Class 257/E29.012)
- With supplementary region doped oppositely to or in rectifying contact with semiconductor containing or contacting region(e.g., guard rings with PN or Schottky junction) (EPO) (Class 257/E29.013)
- With breakdown supporting region for localizing breakdown or limiting its voltage (EPO) (Class 257/E29.014)
- With insulating layer characterized by dielectric or electrostatic property (e.g., including fixed charge or semi-insulating surface layer) (EPO) (Class 257/E29.015)
- For preventing surface leakage due to surface inversion layer (e.g., channel stop) (EPO) (Class 257/E29.016)
- Comprising internal isolation within devices or components (EPO) (Class 257/E29.018)
- Emitter regions of bipolar transistors (EPO) (Class 257/E29.03)
- Collector regions of bipolar transistors (EPO) (Class 257/E29.034)
- Anode or cathode regions of thyristors or gated bipolar-mode devices (EPO) (Class 257/E29.036)
- Source or drain regions of field-effect devices (EPO) (Class 257/E29.039)
- Tunneling barrier (EPO) (Class 257/E29.042)
- Base region of bipolar transistors (EPO) (Class 257/E29.044)
- Base regions of thyristors (EPO) (Class 257/E29.046)
- Channel region of field-effect devices (EPO) (Class 257/E29.049)
- Gate region of field-effect devices with PN junction gate (EPO) (Class 257/E29.059)
- Substrate region of field-effect devices (EPO) (Class 257/E29.06)
- Body region structure of IGFET's with channel containing layer (DMOSFET or IGBT) (EPO) (Class 257/E29.066)