Abstract: A method for manufacturing a semiconductor apparatus includes: on a base substrate, forming an isolation trench layer, a first dielectric layer, a first metal connecting layer, a piezoelectric film, and an upper electrode layer; forming an acoustic resonance film by patternizing the piezoelectric film, the upper electrode layer, and the first metal connecting layer; above the base substrate, forming a second dielectric layer and a third dielectric layer; forming a first cavity through the third and second dielectric layers, and the protection layer; removing a part of the base substrate to expose the isolation trench layer; forming a fourth dielectric layer under the isolation trench layer; and forming a second cavity through the fourth dielectric layer, the isolation trench layer, and the first dielectric layer, plan views of the first and second cavities forming an overlapped region having a polygon shape without parallel sides.

Abstract: A chip package apparatus is provided. The chip package apparatus includes a substrate, a chip on the substrate, and a filling layer on the substrate and surrounding a portion of the chip. The filling layer is made of epoxy molding compound (EMC) and the EMC is white. An electronic device with the chip package apparatus and a method for manufacturing the chip package apparatus are provided.

Abstract: A lead frame that is partially covered with an adhesion layer. A method for forming a lead frame with an adhesion layer starting with a lead frame and using a photo-imageable polyimide or epoxy material to form the adhesion layer. A method for forming a lead frame with an adhesion layer starting with a lead frame blank and using a photo-imageable polyimide or epoxy material to form the adhesion layer.

Abstract: A method for preparing an amorphous metal oxide film is provided. The method comprises providing an aqueous composition comprising a metal fluorine compound; and contacting a substrate with the aqueous composition at a temperature of less than about 100° C. to obtain said amorphous metal oxide film on the substrate. An amorphous metal oxide film, and use of the amorphous metal oxide film in various applications are also provided.

Abstract: A semiconductor package includes a first chip package including a plurality of first semiconductor dies and a first insulating encapsulant, a second semiconductor die, a third semiconductor die, and a second insulating encapsulant. The plurality of first semiconductor dies are electrically connected to each other, and the first insulating encapsulant encapsulates the plurality of first semiconductor dies. The second semiconductor die and the third semiconductor die are electrically communicated to each other by connecting to the first chip package, wherein the first chip package is stacked on the second semiconductor die and the third semiconductor die. The second insulating encapsulant encapsulates the first chip package, the second semiconductor die, and the third semiconductor die.

Abstract: A semiconductor memory includes a plurality of first pads arranged in a first direction, a plurality of second pads arranged parallel to the plurality of first pads and in the first direction, a plurality of third pads arranged in a second direction perpendicular to the first direction, and a plurality of fourth pads arranged in the second direction. The semiconductor memory further includes first interconnection wires extending from the plurality of first pads in the second direction, the first interconnection wires being connected to the plurality of third pads, and second interconnection wires extending from the plurality of second pads in an opposite direction to the second direction, the second interconnection wires being connected to the plurality of fourth pads.

Abstract: A wireless identification system and method used for identifying medical vials having a metallic crimp includes an RFID tag having a first antenna element located at the crimp so as to be capacitively coupled to the crimp to increase the effective surface area of the RFID antenna, and a second antenna element mounted to the side of the vial between the ends of the labeling mounted on the vial so as to not mask any visually readable information of the labeling. Dielectric adhesive is used in one embodiment to couple the antenna element to the crimp. The invention is particularly useful for small vials. A manufacturing method in which the wireless tag is an integral part of the container is disclosed.

Abstract: A semiconductor device package includes a dielectric layer, a first conductive pattern and a first semiconductor device. The dielectric layer has a first surface, wherein a surface uniformity of the first surface is substantially equal to or less than 5%. The first conductive pattern is disposed on the first surface of the dielectric layer, wherein the first conductive pattern includes a first conductive trace, and a line width of the first conductive trace substantially ranges from about 0.5 ?m and about 2 ?m. The first semiconductor device is disposed on the first surface of the dielectric layer and electrically connected to the first conductive pattern.

Abstract: An integrated circuit device includes a support substrate, a first semiconductor chip and a second semiconductor chip provided on the support substrate, and a connection member made of solder. The first semiconductor chip and the second semiconductor chip each includes a semiconductor substrate, an interconnect layer provided on the semiconductor substrate, and a pad provided on a side surface of the interconnect layer. The connection member contacts a side surface of the pad of the first semiconductor chip and a side surface of the pad of the second semiconductor chip.

Abstract: A method for manufacturing a semiconductor component including: providing a flat carrier with an upper side and a lower side, the carrier including a continuous opening that runs between the upper side and the lower side; providing a semiconductor arrangement that includes a semiconductor chip that includes electrically and/or optically active regions on a lower side; arranging the semiconductor arrangement in the opening such that a lower side of the semiconductor arrangement and the lower side of the carrier run in a common plane; casting the semiconductor arrangement with a potting compound, such that the semiconductor arrangement is materially connected to the carrier; and thinning out the semiconductor system by way of grinding from above, such that an upper side of the carrier and an upper side of the semiconductor arrangement run in a common plane.

Abstract: A device that includes a die, a thermal interface material (TIM) coupled to the die, and an electromagnetic (EMI) shield coupled to the thermal interface material (TIM). The electromagnetic (EMI) shield is configured to compress the thermal interface material (TIM). The electromagnetic (EMI) shield comprises a flexible portion. In some implementations, the thermal interface material (TIM) is compressed by the electromagnetic (EMI) shield such that the thickness of the thermal interface material (TIM) is reduced by about at least 10˜20 percent.

Abstract: A lead bonding structure includes: a plurality of leads extending outward from a package; and a plurality of electrode pads formed on a circuit board. The plurality of leads are soldered to the electrode pads, respectively. Each of the leads includes a lower wide portion having a width dimension greater than a width dimension of each of the electrode pads. The lower wide portion of each of the leads is soldered to the corresponding electrode pad.

Abstract: An apparatus may be provided. The apparatus may comprise a substrate and a circuit board. A ball grid array structure may be disposed between the substrate and the circuit board. In addition, a stand-off structure may be disposed between the substrate and the circuit board. The stand-off structure may be adjacent to the ball grid array structure.

Abstract: An electronic component package includes first and second wiring parts including insulating layers, conductive patterns formed in the insulating layers, and conductive vias penetrating through the insulating layers, to be connected to the conductive patterns, respectively; a frame disposed between the first and second wiring parts and having conductive connection parts electrically connecting one or more through-holes with the first and second wiring parts and an electronic component disposed to be surrounded by the through-hole, to thereby be connected to the first wiring part, wherein the conductive patterns formed to be adjacent to the electronic component among the conductive patterns of the first wiring part are embedded in the insulating layer of the first wiring part.

Abstract: A method comprises forming a plurality of interconnect structures including a dielectric layer, a metal line and a redistribution line over a carrier, attaching a semiconductor die on a first side of the plurality of interconnect structures, forming an underfill layer between the semiconductor die and the plurality of interconnect structures, mounting a top package on the first side the plurality of interconnect structures, wherein the top package comprises a plurality of conductive bumps, forming an encapsulation layer over the first side of the plurality of interconnect structures, wherein the top package is embedded in the encapsulation layer, detaching the carrier from the plurality of interconnect structures and mounting a plurality of bumps on a second side of the plurality of interconnect structures.

Abstract: A light emitting device includes a base member including a resin-molded body having an upper surface, a lower surface and a front surface, and formed with a groove-shaped recess in the front surface across the front surface from the upper surface to the lower surface. A lead can be embedded in the resin-molded body. A light emitting element is provided, and can include a light emitting element chip and a reflecting layer limiting a light-emitting region to a predetermined range. The reflecting layer can be disposed on or over a side surface of the light emitting element. The light emitting element is disposed on a bottom surface of the recess such that the reflecting layer is spaced apart from a side wall of the recess.

Abstract: A technique for interconnecting chips by using an interconnection substrate is disclosed. The interconnection substrate includes a base substrate, a first group of electrodes on the base substrate for a first chip to be mounted, and a second group of electrodes on the base substrate for a second chip to be mounted. The interconnection substrate further includes an interconnection layer that includes a first set of pads for the first chip, a second set of pads for the second chip, traces and an organic insulating material. The interconnection layer is disposed on the base substrate and located within a defined area on the base substrate between the first group of electrodes and the second group of the electrodes.

Abstract: An optical structure includes a substrate including a cavity on a first surface of the substrate, an optical component on the substrate and an adhesive applied to a side of the optical component to fix the optical component to the substrate. The optical component includes a recess on a second surface of the optical component, the second surface is opposed to the first surface of the substrate, and the recess is provided along an edge of the second surface.

Abstract: A chip-scale packaging (CSP) LED device, comprising an LED semiconductor die and a packaging structure, is disclosed. The LED semiconductor die is encapsulated by the packaging structure, wherein the lower surface of the packaging structure has a recessed space underneath. A manufacturing method of the CPS LED device is also disclosed.

Abstract: The present disclosure provides a package base core and a sensor package structure. The package base core includes a substrate and at least one stopper, or the package base core includes a substrate, at least one stopper, and a compound. The sensor package structure includes a substrate, a first stopper, a second stopper, a sensing member, a first compound, a second compound, and a translucent member. The stopper (or the first and second stoppers) of the present disclosure is provided to form with a protruding portion on the substrate, so that an overflowing of the compound can be avoided, thereby increasing the reliability of the package base core.

Abstract: Various aspects of this disclosure provide a method of manufacturing an electronic device and an electronic device manufactured thereby. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing an electronic device, and an electronic device manufactured thereby, that utilizes ink to form an intermetallic bond between respective conductive interconnection structures of a semiconductor die and a substrate.

Abstract: A semiconductor package includes a substrate, a first semiconductor chip and a second semiconductor chip adjacent to each other on the substrate, and a plurality of bumps on lower surfaces of the first and second semiconductor chips. The first and second semiconductor chips have facing first side surfaces and second side surfaces opposite to the first side surfaces. The bumps are arranged at a higher density in first regions adjacent to the first side surfaces than in second regions adjacent to the second side surfaces.

Abstract: A display device including: a substrate including a first region and a second region; a signal line on the substrate and including a first layer and a second layer that overlap each other; and a first insulating layer between the substrate and the signal line, wherein a first organic layer may be between the first layer and the second layer in the first region, and the first layer and the second layer may be in direct contact with each other in the second region, and the first insulating layer may be disposed in an area in which the first organic layer is.

Abstract: An LED package is disclosed. The LED package includes: a metal reflector having a cavity formed therein; an LED chip arranged on the bottom of the cavity of the reflector; a wavelength converting panel including a lower glass plate, an upper glass plate, and a wavelength converting sheet interposed between the lower glass plate and the upper glass plate and arranged on the cavity of the reflector; and a sealing member disposed on the side surface of the lower glass plate and the side surface of the upper glass plate and connecting the wavelength converting panel to the reflector.

Abstract: A liquid crystal on substrate (LCOS) assembly may include an LCOS carrier. The LCOS assembly may include at least one thick layer on the LCOS carrier and associated with a threshold thickness. The threshold thickness may be at least 5 micrometers. The LCOS assembly may include a switching engine on the at least one thick layer. The switching engine may include an LCOS die and an LCOS cover glass to enclose an LCOS liquid. The LCOS assembly may be associated with a thermal sensitivity of less than 0.5 millidegrees of curvature per degree Celsius for a particular temperature range.

Abstract: Embodiments herein relate to torque controlled drivers to simultaneously drive fasteners to secure a thermal transfer device to an integrated circuit package. In various embodiments, a torque controlled driver may include a gearbox, a driver with a torque controller and a motor with a rotating shank, a motor gear coupled concentrically with the rotating shank, a bit drive gear in rotational engagement with the motor gear to drive a bit sized to drive a fastener to secure a thermal transfer device to an integrated circuit package, where the gearbox is to hold the motor gear in a position about a motor gear rotational axis and the drive gear about a drive gear rotational axis such that the motor gear and the bit drive gear maintain rotational engagement as the motor gear rotates. Other embodiments may be described and/or claimed.

Abstract: Examples disclosed herein involve integrated circuit chip arrangements. An example integrated circuit (IC) package may include a first semiconductor chip that includes a first metal-oxide-semiconductor field-effect transistor (MOSFET) and a second semiconductor chip mounted within a housing of the IC package. The second semiconductor chip may include a second MOSFET and a control circuit configured with a first driver for the first MOSFET and a second driver for the second MOSFET. The first semiconductor chip may be mounted to the second semiconductor chip opposite a base of the IC package.

Abstract: A semiconductor device includes a substrate having a front surface and a back surface, a subassembly on the front surface of the substrate including first and second metal layers insulated from each other, a cap assembly including a metal connection member, and first and second through holes penetrating through the substrate and filled with metals. The metal filled in the first through hole is electrically connected to the first metal layer, and the metal filled in the second through hole is electrically connected to the second metal layer. The semiconductor device also includes a metal connection pad on the substrate that entirely surrounds the subassembly and is aligned with the metal connection member. The interface between the cap assembly and the subassembly is free of through holes to prevent a resistance change and shield the subassembly from interference.

Abstract: A package includes a die, a plurality of first conductive structures, a plurality of second conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The first conductive structures and the second conductive structures surround the die. The first conductive structures include cylindrical columns and the second conductive structures include elliptical columns or conical frustums. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures. The redistribution structure is over the active surface of the die and the encapsulant. The redistribution structure is electrically connected to the die, the first conductive structures, and the second conductive structures.

Abstract: A method of manufacturing a light emitting device having a resin package which provides an optical reflectivity equal to or more than 70% at a wavelength between 350 nm and 800 nm after thermal curing, and in which a resin part and a lead are formed in a substantially same plane in an outer side surface, includes a step of sandwiching a lead frame provided with a notch part, by means or an upper mold and a lower mold, a step of transfer-molding a thermosetting resin containing a light reflecting material in a mold sandwiched by the upper mold and the lower mold to form a resin-molded body in the lead frame and a step of cutting the resin-molded body and the lead frame along the notch part.

Abstract: Embodiments of the present disclosure provide techniques and configurations for a semiconductor package with thermal fins, in accordance with some embodiments. In embodiments, a package assembly includes a die and a mold compound disposed on the die, to encapsulate the die. The package may further include a thermal solution including one or more thermal fins attached to the mold compound at their respective ends. The thermal fins may be disposed substantially flat on a top surface of the mold compound at a first temperature, and rise away from the top surface of the mold compound in response to a change of temperature to a second temperature, to reach an enclosure that surrounds the package assembly, to provide direct heat conductivity between the die and the enclosure. The second temperature may be greater than the first temperature. Other embodiments may be described and/or claimed.

Abstract: A composite board is provided with a board and a covering member. The board includes a base made of ceramics, first wiring provided on an upper surface of the base, and second wiring provided on a lower surface of the base and electrically connected to the first wiring. The covering member covers the base such that the first wiring and the second wiring are exposed.

Abstract: A method of making an electronic device may include forming at least one circuit layer that includes solder pads on a substrate and forming at least one liquid crystal polymer (LCP) solder mask having mask openings therein. The method may also include forming at least one thin film resistor on the LCP solder mask and coupling the at least one LCP solder mask to the substrate so that the at least one thin film resistor is coupled to the at least one circuit layer and so that the solder pads are aligned with the mask openings.

Abstract: A multi-layered conductor comprising one or more conductor layers of an electrically conductive material and one or more shielding layers of a soft magnetic material. The shielding layer can be coated onto the conductor layer and has a lower conductivity and a higher magnetic permeability than the electrically conductive material of conductor layers. The shielding layer can, at least when alternating current (AC) flows through the multi-layered conductor at relatively high frequencies, provide a separate power path for at least a portion of the high frequency AC current, as well as absorb at least a portion of the high frequency noises associated with that separated high frequency AC current. Additionally, the shielding layer can be separated from the conductor layer at an output end of the multi-layered conductor so that output ends of the shielding layer and conductor layer can be electrically connected to different electrical devices or components.

Abstract: Methods of forming microelectronic package structures/modules, and structures formed thereby, are described. Structures formed herein may include a first die disposed on a substrate, a second die disposed on the substrate, a molding compound disposed between the first die and the second die, wherein the molding compound is disposed on a top surface of the substrate. An epoxy material is disposed between a top portion of a sidewall of the first die and the molding compound, and a thermal interface material (TIM) is disposed on top surfaces of the first and second die, wherein the TIM extends over the entire length of the substrate.

Abstract: A method to control warpage in a semiconductor chip package that includes: attaching a semiconductor chip to a semiconductor chip package; attaching a stiffener to the semiconductor chip package so that the semiconductor chip is contained within the stiffener, the stiffener having a coefficient of thermal expansion (CTE) less than that of the substrate on which the chip is assembled; attaching the semiconductor chip package to a laminate substrate; and removing the stiffener.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor element, a plurality of terminals, and a sealing resin. The semiconductor element has a front surface and a back surface. The front surface and the back surface face in opposite directions to each other in a thickness direction of the semiconductor element. The plurality of terminals are disposed at a distance from the semiconductor element and are electrically connected to the front surface. The sealing resin has a first surface facing in a same direction as the direction in which the front surface faces. Each of the plurality of terminals has a main surface exposed from the first surface.

Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device.

Abstract: Packaging methods for semiconductor devices are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a workpiece including a plurality of packaging substrates. A portion of the workpiece is removed between the plurality of packaging substrates. A die is attached to each of the plurality of packaging substrates.

Abstract: Various embodiments provide for a chip package including a carrier; a layer over the carrier; a further carrier material over the layer, the further carrier material comprising a foil; one or more openings in the further carrier material, wherein the one or more openings expose at least one or more portions of the layer from the further carrier material; and a chip comprising one or more contact pads, wherein the chip is adhered to the carrier via the one or more exposed portions of the layer.

Abstract: An interposer may comprise a metal layer above a substrate. A dam or a plurality of dams may be formed above the metal layer. A dam surrounds an area of a size larger than a size of a die which may be connected to a contact pad above the metal layer within the area. A dam may comprise a conductive material, or a non-conductive material, or both. An underfill may be formed under the die, above the metal layer, and contained within the area surrounded by the dam, so that no underfill may overflow outside the area surrounded by the dam. Additional package may be placed above the die connected to the interposer to form a package-on-package structure.

Abstract: Computer modules with small thicknesses and associated methods of manufacturing are disclosed. In one embodiment, the computer modules can include a module substrate having a module material and an aperture extending at least partially into the module material. The computer modules can also include a microelectronic package carried by the module substrate. The microelectronic package includes a semiconductor die carried by a package substrate. At least a portion of the semiconductor die extends into the substrate material via the aperture.

Abstract: The present disclosure discloses a display device and a manufacturing method thereof. The display device is provided with a chip-on-film package and a sealant in a wiring area of the display device, with first surface of the chip-on-film package connected to the active area of the display device to provide a driving signal to the active area, and the second surface of the chip-on-film package provided with a concave-convex structure, a sealant covering the concave-convex structure of the chip-on-film package.

Abstract: According to an embodiment, an electronic apparatus includes a printed circuit board including a plurality of devices that include a nonvolatile memory package and a controller package configured to control the nonvolatile memory package, and a housing accommodating the printed circuit board. The housing includes an opening on a surface constituting the housing. An encryption device among the plurality of devices is present in a first region. The first region is a region on the printed circuit board that is not irradiated with light emitted from a light source placed at the opening. The encryption device is a device used for an encryption process of data to be stored into the nonvolatile memory package.

Abstract: A structure includes a first encapsulating layer, and a first coil in the first encapsulating layer. A top surface of the first encapsulating layer is coplanar with a top surface of the first coil, and a bottom surface of the first encapsulating layer is coplanar with a bottom surface of the first coil. A second encapsulating layer is over the first encapsulating layer. A conductive via is in the second encapsulating layer, and the first conductive via is electrically coupled to the first coil. A third encapsulating layer is over the second encapsulating layer. A second coil is in the third encapsulating layer. A top surface of the third encapsulating layer is coplanar with a top surface of the second coil, and a bottom surface of the third encapsulating layer is coplanar with a bottom surface of the second coil.

Abstract: Package-On-Package (PoP) structures that includes stud bulbs is provided. According to an embodiment, a POP structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

Abstract: A semiconductor device package includes a buffer layer having an upper surface perpendicular to a first direction, a plurality of semiconductor chips stacked on the buffer layer one by one in the first direction, and a chip sealing material surrounding sidewalls of the semiconductor chips. The semiconductor chips include an upper semiconductor chip at a farthest position from the buffer layer and a remaining plurality of intermediate semiconductor chips. Each of the intermediate semiconductor chips includes through silicon vias (TSVs) passing through each of the intermediate semiconductor chips. The upper semiconductor chip includes a trench formed in at least a portion of a periphery of the upper semiconductor chip and covered by the chip sealing material. Accordingly, the semiconductor device package provides increased device reliability.

Abstract: Devices and methods are described relating to capacitor energy storage devices that are small in size and have a high energy stored to volume ratio. The capacitor devices include 2D material electrodes. The capacitor devices offer very fine granularity with high stacking possibilities which may be used in super capacitors and capacitor arrays. The devices include interleaved laminations 2D material electrode layers, for example graphene, and dielectric layers, for example Hafnium Oxide. In an embodiment a capacitor device includes 10,000 layers of interleaved graphene separated by 9,999 layers of HfO. Odd layers of the graphene are electrically connected to a first terminal and even layers of graphene are electrically connected to a second terminal of the capacitor device.

Abstract: A package structure including a semiconductor die, a warpage control layer, an insulating encapsulant and a redistribution layer is provided. The semiconductor die has an active surface and a backside surface opposite to the active surface. The warpage control layer is disposed on the backside surface of the semiconductor die, wherein the warpage control layer comprises a material having a Young's Modulus of 100 GPa or more. The insulating encapsulant is encapsulating the semiconductor die and the warpage control layer. The redistribution layer is located on the insulating encapsulant and over the active surface of the semiconductor die.

Abstract: A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 ?m. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 ?m. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 ?m. In another embodiment the underbump metallization has a first dimension that is less than a dimension of the contact pad and a second dimension that is greater than a dimension of the contact pad.