Abstract: An integrated communications system. Comprising a substrate having a receiver disposed on the substrate for converting a received signal to an IF signal. Coupled to a VGA for low voltage applications and coupled to the receiver for processing the IF signal. The VGA includes a bank pair having a first bank of differential pairs of transistors and a second bank of differential pairs of transistors. The bank pair is cross-coupled in parallel, the IF signal is applied to the bank pair decoupled from a control signal used to control transconductance output gain of the bank pair over a range of input voltages. A digital IF demodulator is disposed on the substrate and coupled to the VGA for low voltage applications, for converting the IF signal to a demodulated baseband signal. And a transmitter is disposed on the substrate operating in cooperation with the receiver to establish a two way communications path.

Abstract: The present invention relates to a power transistor module for radio frequency applications, particularly for use in an amplifier stage in a radio base station or a ground transmitter for TV or radio, wherein said power transistor module comprises a support, a power transistor chip arranged thereon, outer electrical connections projecting from the module, and inner electrical connections connected between said transistor chip and said outer connections, where at least one of said outer electrical connections is comprised of a first conductor pattern arranged on a flexible foil. The invention further comprises a power amplifier comprising said power transistor module, a method for fabrication of a power amplifier, wherein said module is electrically connected to a circuit board mounted at a heat sink and is mounted at said heat sink, and finally a power amplifier manufactured according to the method. FIG. 3 suggested for publication.

Abstract: A transistor includes a source region; a drain region; a channel region interposed between the source region and the drain region; and at least a first gate electrode and a second gate electrode provided on the channel region. At least one of the first and second gate electrodes traverses substantially an entire width of the channel region. At least another one of the first and second gate electrodes traverses a part of the width of the channel region.

Abstract: A computer video signal distributor receives as inputs the video signals of a computer, and then processes and distributes these video signals to a plurality of monitors. The computer video signal distributor includes three transistor common based voltage amplifying circuits for inputting red, green, blue video signals of the computer respectively, then amplifying these video signals for outputting. Three sets of transistor emitter follower current amplifying circuits are provided for connecting respectively with one of the outputs of the three voltage amplifying circuits, and provide sufficient frequency response for inputted video signals, and distributing the inputted video signals according to the number of monitors. A synchronous signal buffering device is provided for receiving synchronous signals of the computer, and generating a plurality of sets of synchronous signals according to the number of the monitors.

Abstract: A proximity detector including a rapid transistor (i.e., one having a very high product gain-band) connected to a high potential voltage via a capacitor. The capacitor is connected in series to a source of a pulsed current that is a function of the proximity of an object. The capacitor is also connected to a low potential voltage via an RC circuit. The mid-point of the RC circuit is connected to the collector of a transistor connected to the high potential voltage by a collector resistor in parallel with a gain resistor of the amplifier.

Abstract: A compact photosensor circuit provides automatic intensity range control for machine vision systems. The circuit may be implemented with standard CMOS integrated circuit technology to provide high sensitivity, fully static operation, and automatic exposure control with no moving parts. For each pixel of an imaging array, a photodetector provides an input photocurrent to a corresponding photosensor circuit. The photodetector is connected to provide an output voltage and an input to the gates of a pair of series-connected FETs that act as an attenuator. The attenuator is connected to a biasing source that provides a floor bias voltage. An output of the attenuator is connected to the gate of a third FET connected to the input photocurrent. The output voltage responds as a function of the light intensity at the photodetector while the bias voltage determines the range of light intensity for normal operation of the photosensor circuit.

Abstract: A detector circuit, for example for optical radiation, has a detector diode (20) and an amplifier circuit (30) integrated with the diode in the same silicon wafer for amplification of the diode signal. The diode is designed as a lateral diode. The diode and the amplifier circuit are both produced in a homogeneously weakly doped silicon wafer (1).

Abstract: An oscillator which inhibits unwanted oscillations and requires a comparatively small power supply voltage is described. The oscillator includes an amplifier transistor 110 (220), an output current of which flows into the emitter of a load transistor 120 (220) via a load signal path. The amplifier stage acquires a bandpass characteristic by a passive capacitive bootstrap signal transfer from this signal path to the base of the load transistor. The oscillator thus preferably oscillates within the passband of the amplifier stage. The amplifier stage has a comparatively large gain within the passband even without a load resistor in the load signal path. Such a load resistor would cause a voltage drop and, hence, increase the required power supply voltage.

Abstract: Input signals provide binary coded information at a first frequency. A ping-pong arrangement has two (2) substantially identical circuitries. The circuitries operate respectively in synchronism with first and second clock signals each having a frequency half that of the first frequency and each having a phase opposite to the phase of the other. When the first clock signal has a first polarity, the first circuitry produces first voltages representing these signals. In the second polarity of the first clock signal, the first circuitry produces first output signals representing the first voltages. The first circuitry continues producing the first voltages in the clock cycle after the initial production of such voltages. Similarly, the second circuitry produces second voltages representing the input signals in the first polarity of the second clock signal. In the second polarity of the second clock signal, the second circuitry produces second output signals representing the second voltages.

Abstract: In a fiber-optic communication system, a polarization independent semiconductor optical amplifier structure is achieved by tailoring the height-width aspect ratio of its active region to a value at least close to unity and at the same time using a laser cavity structure in which the end mirrors are buried in the semiconductor body in which the optical amplifier structure is built.

Abstract: An amplifying surface wave receiver for a surface wave element composed of a material which exhibits the piezo effect and which can be rendered electrically conductive by local doping, where a doped region is formed at the upper portion of an insulating substrate body (8) which forms the surface wave element and which is composed of piezo electric material, said doped region forms a conductive channel (7) between at least two contact electrodes which are spaced a defined distance from each other, and the conductive channel (7) formed such that occurring piezo charges are positioned so as to modulate the conductivity of said channel. One terminal of a voltage source (4) is connected to one of the contact electrodes (6) and the other terminal is connected to the other contact electrode (6) through an alternating current detector (5).

Abstract: A solid state electromagnetic wave amplifier is provided with confinement structures for the prevention of transverse carrier wave diffusion into the amplifier body. The carrier waves are confined with a non-metallic semiconductor layer sandwiched between a semi-insulating substrate and a spacer insulating layer. The amplifier can operate at frequencies up to on the order of 100 GHz.

Abstract: A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.

Abstract: An intrusion alarm having an oscillator which is turned off by the body capacitance of a would-be intruder operates in the frequency range of 17-65 MHz. At this frequency, reliable discrimination between body capacitance and stray capacitance is possible and therefore sensitivity is increased while false alarms are reduced. Battery life is increased by providing a high resistance load in the stand-by mode to reduce battery drain to 500 microamperes or less. Latching and nonlatching embodiments are disclosed.

Abstract: A positive-temperature-coefficient potential is developed by scaling up from the potential difference appearing between the base electrodes of two transistors with interconnected emitter electrodes constrained by a positive feedback loop to operate with different densities of current flow through their respective base-emitter junctions. This positive-temperature-coefficient potential is added to a negative-temperature-coefficient potential derived from the base-emitter offset potential of one of the transistors, to provide the reference potential.