Abstract: Comparison circuitry includes a first memory that stores a list of data items, a second memory that stores a list of most-recently used ones of the data items, a first comparator that compares an input data item first to the ones of the data items in the second memory and, only in absence of a hit in the second memory, compares the input data item to the data items in the first memory. At least one additional comparator may operate in parallel with the first comparator to compare the input data item to respective data items in at least one additional second memory, and to compare the input data item to respective data items in the first memory in absence of a respective hit in the at least one additional second memory. A data communications system may include a decoder incorporating such comparison circuitry.

Abstract: A memory device memory device includes a multi-layers stack, a charge-trapping layer, a first channel layer and a SSL switch. The multi-layers stack includes a plurality of insulating layers, a plurality of conductive layers alternatively stacked with the insulating layers and at least one first through opening passing through the conductive layers. The charge-trapping layer blankets over a sidewall of the first through opening. The first channel layer is disposed in the first through opening. The SSL switch is disposed on the multi-layers stack and includes a second channel layer, a gate dielectric layer and a gate. The second channel layer is disposed on and electrically contacting to the first channel layer. The gate dielectric layer is disposed on the second channel layer and made of a material other than that for making the charge-trapping layer. The gate is disposed on the gate dielectric layer.

Abstract: A system is disclosed. The system can comprise dynamic drive circuitry configured to drive a plurality of electrodes on a touch screen. The system can also comprise a switching circuit configured to selectively couple the dynamic drive circuitry to one or more of the plurality of electrodes. The system can also comprise a display circuitry configured to selectively update a plurality of display pixels on the touch screen. The dynamic drive circuitry can be configured to set its output based on which of the plurality of electrodes are selectively coupled to the first drive circuitry and which of the display pixels are updated by the display circuitry.

Abstract: This non-volatile semiconductor memory device includes a memory cell array including NAND cell units formed in a first direction vertical to a surface of a semiconductor substrate. A local source line is electrically coupled to one end of the NAND cell unit formed on the surface of the substrate. The memory cell array includes: a laminated body where plural conductive films, which are to be control gate lines of memory cells or selection gate lines of selection transistors, are laminated sandwiching interlayer insulating films; a semiconductor layer that extends in the first direction; and an electric charge accumulating layer sandwiched between: the semiconductor layer and the conductive film. The local source line includes a silicide layer. The electric charge accumulating layer is continuously formed from the memory cell array to cover a peripheral area of the silicide layer.

Abstract: A circuit for biasing non-volatile memory cells includes a dummy decoding path between a global bias line and a biasing node, a reference current generator coupled to the dummy decoding path and configured to supply a reference current, a biasing stage configured to set a cell bias voltage on the biasing node, and a compensation stage configured to compensate a current absorption of the biasing stage at the biasing node so that the reference current will flow through the dummy decoding path.

Abstract: The disclosure provides integrated circuit (IC) structure including: a substrate; a shallow trench isolation (STI) positioned between the first and second regions of the substrate; a first transistor with a channel region is positioned on the first region of the substrate, and spacer positioned on the first region of the substrate and the STI; and a gate metal positioned on the spacer. The gate metal includes a gate contact region positioned over the first source/drain region of the substrate, and surrounding the channel region. Across-couple region extends laterally from the gate contact region to the source/drain region of a second transistor formed on the second region of the substrate.

Abstract: A device including a memory cell and write assist circuit is disclosed. The memory cell includes a first inverter and a second inverter cross-coupled with the first inverter. The first inverter is operated with a first operational voltage and a third operational voltage, and the second inverter is operated with a second operational voltage and a fourth operational voltage. The write assist circuit is coupled to the memory cell. During a write operation of the memory cell, the write assist circuit is configured to adjust a voltage level of the first operational voltage, the second operational voltage, the third operation voltage, the fourth operation voltage, or a combination thereof, by a bias voltage difference.

Abstract: Apparatuses and methods for charging a global access line prior to accessing a memory are described. An example apparatus may include a memory array of a memory. A plurality of global access lines may be associated with the memory array. The global access line may be charged to a ready-access voltage before any access command has been received by the memory. The global access line may be maintained at the ready-access voltage during memory access operations until the receipt of a post-access command. The post-access command may reset the global access line to an inactive voltage.

Abstract: A method for calibrating capturing read data in a read data path for a DDR memory interface circuit is described. In one version, the method includes the steps of delaying a core clock signal by a capture clock delay value to produce a capture clock signal and determining the capture clock delay value. The capture clock signal is a delayed version of the core clock signal. The timing for the read data path with respect to data propagation is responsive to at least the capture clock signal. In another version, timing for data capture is responsive to a read data strobe or a signal derived therefrom, and a core clock signal or a signal derived therefrom.

Abstract: An example apparatus comprises an array of memory cells coupled to sensing circuitry. The apparatus can include a control component configured to cause computing of a data value equal to a logical OR between the digit of a mask and a data value stored in a memory cell located in a row at a column of the array corresponding to a digit of a vector stored in the array. The control component can cause storing of the data value equal to the logical OR in the memory cell located in the row at the column of the array corresponding to the digit of the vector.

Abstract: Systems and methods are provided to detect a developed bad word-line of a flash memory. Embodiments provide an improved Background media scan (BGMS) process that can predict at the end of a block read if a word-line will potentially become bad with the use of the flash memory. Accordingly, data from the potentially bad block can be recovered and the block can be retired. The embodiments can minimize the need for the expensive chip-kill method.

Abstract: A channel controlling device includes: a multiplexing circuit coupled to multiple channels for selecting a particular channel from the channels to output a channel data according to a selection signal, wherein the channels correspond to multiple predetermined digital numbers; a sorting circuit arranged to sort the predetermined digital numbers to form multiple sorted digital numbers according to a data output order of the channels; and an arbitration circuit, arranged to determine the selection signal according to the plurality of sorted digital numbers.

Abstract: The present disclosure provides for adaptive scheduling of memory refreshes. One embodiment relates to a method of adapting an initial refresh sequence. In this method, flow and blockage scores for each refresh sequence of a plurality of refresh sequences are obtained and stored in an array of scores. An initial refresh sequence is selected in a way that favors a high flow score and a low blockage score. Another embodiment relates to a method of adapting a current refresh sequence. Current flow and blockage scores are obtained and stored for the current refresh sequence. The current flow and blockage scores are used to update (by averaging, for example) the existing flow and blockage scores for the current refresh sequence. The next refresh sequence is then chosen from amongst a plurality of refresh sequences in a way that favors a high flow score and a low blockage score.

Abstract: A memory device comprising a memory array comprising a plurality of memory cells, two or more fuses coupled to the memory array, wherein each of the two or more fuses contains trim data for the memory array and a mode register for selecting one of the two or more fuses to be enabled.

Abstract: This technology relates to a semiconductor system. The semiconductor system may include a first semiconductor device capable of outputting a clock signal, a data strobe signal, and data; and a second semiconductor device capable of generating a division enable signal and a data input clock signal in response to the clock signal when performing a write operation, generating an internal strobe signal by dividing the data strobe signal in response to the division enable signal, and aligning the data in response to the internal strobe signal, wherein the first semiconductor device receives the division enable signal from the second semiconductor device and trains the data strobe signal so that the data strobe signal is output in a predetermined section.

Abstract: A system and a computer program product for managing a computing system crash. Memory of the computing system is separated into at least two classifications, referred to herein as a dumpable area and a non-dumpable area. Upon detection of an operating system crash in the computing system, an operating system module prevents a dumping operation of the memory, including preventing access to the dumpable memory area, and divides the non-dumpable area into a new dumpable area and a new non-dumpable area. At such time as the operating system is rebooted, the dumping operation is initiated and completed in the dumpable area, and resumed operations use the non-dumpable area.

Abstract: A method, system and a computer program product for managing a computing system crash. Memory of the computing system is separated into at least two classifications, referred to herein as a dumpable area and a non-dumpable area. Upon detection of an operating system crash in the computing system, an operating system module prevents a dumping operation of the memory, including preventing access to the dumpable memory area, and divides the non-dumpable area into a new dumpable area and a new non-dumpable area. At such time as the operating system is rebooted, the dumping operation is initiated and completed in the dumpable area, and resumed operations use the non-dumpable area.

Abstract: A storage system and method for generating block allocation groups based on deterministic data patterns are provided. A storage system is provided comprising a memory comprising a plurality of blocks and a controller. The controller is configured to infer characteristics of the memory from data patterns of data stored in the plurality of blocks; and group the plurality of blocks based on the inferred characteristics of the memory.

Abstract: Signal processing including decoding and format conversion is executed on compressed image data at a high speed by simple control. A decoder decodes compressed image data in units of blocks and writes the decoded data in the blocks into a decoded data memory. A progress notification unit generates a progress signal indicating a state of progress that data is being decoded or written into the decoded data memory by the decoder and outputs the signal to a format conversion unit per picture. The format conversion unit reads out the decoded data from the decoded data memory and format-converts the data, and writes the format-converted data into a format-converted data memory. In reading out data from the decoded data memory, the format conversion unit acquires information indicating an address of decoded data readable from the decoded data memory from the progress signal.

Abstract: A source-synchronous system is provided in which a non-uniform interface may exist in a data source endpoint as well as in a data sink endpoint.

Abstract: A memory cell (101) is connected to a word line (WL), a bit line (BL), and a power supply line (PL), and includes a flip-flop storing data based on a change in resistance value of a magnetic tunnel junction element, and, a power gating field-effect transistor including a drain that is one end of a current path connected to the power supply line, and which has another end connected to the flip-flop. The ON and OFF states of the power gating field-effect transistor are controlled based on a control signal applied to a control terminal of the power gating field-effect transistor.

Abstract: There is provided a reconfigurable semiconductor device including a plurality of logic units connected to each other using an address line or a data line, each logic unit including a plurality of address lines, a plurality of data lines, a clock signal line configured to receive a system clock signal, a delay element configured to delay the system clock signal, a memory cell unit configured to operate in synchronization with a clock signal, and an address decoder configured to decode an address signal to output the decoded signal to the memory cell unit. The logic unit configuring a combination logic circuit operates in synchronization with a delayed clock signal outputted from the delay element.

Abstract: A semiconductor device includes: a plurality of semiconductor chips which are stacked; a plurality of circuit blocks respectively included in the plurality of semiconductor chips; a first power supply domain that supplies power and stops the supply of the power to one of the plurality of circuit blocks independently of the other circuit blocks; and a second power supply domain that supplies power and stops the supply of the power to at least two of the plurality of circuit blocks in common and supplies the power and stops the supply of the power independently of the other circuit blocks.

Abstract: A semiconductor apparatus, comprising a decoder arranged in a path between a first power supply line and a second power supply line and configured to receive a signal and decode the signal, a switch portion arranged, in series with the decoder, in the path between the first power supply line and the second power supply line, and a control unit configured to set the switch portion in a conductive state so as to cause the decoder to decode the signal after the signal has changed from one of high level and low level to the other.

Abstract: The present disclosure provides for adaptive scheduling of memory refreshes. One embodiment relates to a method of adapting an initial refresh sequence. In this method, flow and blockage scores for each refresh sequence of a plurality of refresh sequences are obtained and stored in an array of scores. An initial refresh sequence is selected in a way that favors a high flow score and a low blockage score. Another embodiment relates to a method of adapting a current refresh sequence. Current flow and blockage scores are obtained and stored for the current refresh sequence. The current flow and blockage scores are used to update (by averaging, for example) the existing flow and blockage scores for the current refresh sequence. The next refresh sequence is then chosen from amongst a plurality of refresh sequences in a way that favors a high flow score and a low blockage score.

Abstract: In response to a write operation to a memory cell that causes a data line of the memory cell to have a first voltage direction, causing the data line to have a second voltage direction opposite the first voltage direction.

Abstract: A sound source locator efficiently employs a distributed physical or logical microphone array to determine a location of a source of a sound. In some instances, the sound source locator is deployed in an augmented reality environment. The sound source locator detects sound at a plurality of microphones, generates a signal corresponding to the sound, and causes attributes of signal as generated at the plurality of microphones to be stored in association with the corresponding microphone. The sound source locator uses these stored attributes to identify multiple groups of the plurality of microphones from which delays between the times the signal is generated can be used to compute the location of the source of the sound.

Abstract: A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.

Abstract: Combinational networks provide simultaneous connectivity via networks of different network type between user equipment. For communication sessions on different network types, belonging to the same user equipment, a correlation check is enabled by introduction of an identifier denoted as Combinational Call Indicator (CCI). This CCI identifier in combination with the known Calling Line Identity (CLI) identifier enables user equipment and other and network entities to perform a correlation check between ongoing, or to be established, CScalls and PS-sessions. A user equipment, setting up a related communication session, sets the CCI identifier and provides the CCI identifier during the communication session setup towards the receiving user equipment or network entity, which is enabled to check whether the last received communication session is correlated to the earlier established session due to the presence of the CCI identifier.

Abstract: Methods, systems, and structures for stress balancing field effect transistors subject to bias temperature instability-caused threshold voltage shifts. A method includes characterizing fatigue of a location in a memory array by skewing a bit line voltage of the location. The method also includes determining that the location is unbalanced based on the characterizing. Further, the method includes inverting a logic state of the location. Additionally, the method includes changing a value of an inversion indicator corresponding to the location.

Abstract: A write assist circuit capable of writing data to a memory cell with a bit line and a bit line bar is provided. The write assist circuit includes a clamping circuit, and first and second sense amplifiers. The clamping circuit is coupled to first and second nodes to prevent the voltage of the first and second nodes from being lower than a data-retention voltage. The first and second nodes are supplied with first and second voltage sources. The first and second sense amplifier are utilized to detect the voltage of the bit line or the bit line bar, amplify the voltage and pull down the voltage of one of the first or second node according to the data while the voltage of the other one of the first or second node is kept at a power supply voltage level.

Abstract: Techniques are provided for reducing program disturb in a 3D memory device. The techniques include compensating for a temperature dependence of program disturb. The techniques may include compensating for how program disturb depends on the location of the word line that is selected for programming. In one aspect, the voltage that is applied to the control gates drain side select transistors of unselected NAND strings is adjusted during programming based on temperature. Greater temperature compensation may be applied when the selected word line is closer to the drain side select transistors.

Abstract: A system includes a first plurality of memory macros and a first tracking circuit associated with a memory macro of the first plurality of memory macros. Each memory macro of the first plurality of memory macros includes a corresponding global control circuit configured to receive a first reset signal. The first tracking circuit is configured to generate the first reset signal.

Abstract: An asynchronous FIFO buffer that provides data in response to requests to read a memory array is disclosed. The asynchronous FIFO buffer provides the data output within a latency tolerance. The asynchronous FIFO has a read clock input and a write clock input. The read clock input receives a read enable signal that defines how data should be clocked out. The write clock input receives a write clock that is asynchronous from the read enable signal. The asynchronous FIFO inputs data from the memory array in accordance with the write clock signal. The asynchronous FIFO outputs data in accordance with the read enable signal. Control logic may pre-fetch data from the memory array into the asynchronous FIFO prior to the read enable signal first being received.

Abstract: A reconfigurable semiconductor device includes a plurality of logic units connected to each other via address lines or data lines, each of the logic units including: a plurality of address lines; a plurality of data lines; a first address decoder that decodes addresses inputted from some of the address lines; a second address decoder that decodes addresses inputted from the other of the address lines; a first memory cell unit having a plurality of memory cells and selecting, among said plurality of memory cells, a predetermined number of memory cells in accordance with the address decoded by the first address decoder; and a second memory cell unit having a plurality of memory cells and selecting, among said plurality of memory cells, a predetermined number of memory cells in accordance with the address decoded by the second address decoder.

Abstract: A system, a memory device and a method are contemplated in which the apparatus may include a plurality of memory cells, a plurality of voltage reduction circuits, and control circuitry. The plurality of voltage reduction circuits may be configured to reduce a voltage level of a power supply coupled to the plurality of memory cells. The control circuitry may be configured to select one of the voltage reduction circuits based on one or more operating parameters. The control circuitry may be further configured to activate the selected voltage reduction circuit upon receiving a write command directed towards the memory cells. The control circuitry may be further configured to execute the write command. Upon completion of the write command, the control circuitry may be further configured to de-activate the selected one of the voltage reduction circuits.

Abstract: The present disclosure includes a three dimensional (3D) integrated device comprising a first die having a first supply line and a second die having a second supply line, a power header, and voltage selection logic. The power header is connected to the first die and the second die and configured to generate a first voltage on a first voltage line and a second voltage on a second voltage line. The voltage selection logic is connected to the first supply line and the second supply line and configured to select between the first voltage line and the second voltage line for each of the first supply line and the second supply line.

Abstract: The present disclosure relates to mitigating read disturb in a cross-point memory. An apparatus may include a memory controller configured to select a target memory cell for a memory access operation. The memory controller includes a sense module configured to determine whether a snap back event occurs during a sensing interval; and a write back module configured to write back a logic one to the memory cell if a snap back event is detected.

Abstract: Provided is a substrate identification circuit that generates a numeric value, whose duplication is difficult and which is proper to a substrate, at low cost and a semiconductor device having such a substrate identification circuit. A substrate identification circuit 304 is produced by utilizing variations in characteristics among TFTs formed on a substrate having an insulating surface. The substrate identification circuit 304 includes a plurality of proper bit generating circuits, each of which is constructed from a plurality of TFTs and outputs a one-bit random number based on variations in characteristics among the plurality of TFTs. The substrate identification circuit generates a numeric value proper to the substrate using the one-bit random number. The substrate identification circuit may include a circuit that makes a judgment by comparing the numeric value proper to the substrate with an identification number inputted from the outside.

Abstract: Examples are disclosed for cycling endurance extending for memory cells of a non-volatile memory array. The examples include implementing one or more endurance extending schemes based on program/erase cycle counts or a failure trigger. The one or more endurance extending schemes may include a gradual read window expansion, a gradual read window shift, an erase blank check algorithm, a dynamic soft-program or a dynamic pre-program.

Abstract: A method is provided for scaling voltage in an integrated circuit. A calibration operation is performed on a functional module on the integrated circuit periodically at a rate T1. At least one parameter on the integrated circuit in monitored to determine when a performance threshold is reached. A change is initiated to an operating voltage for a portion of the integrated circuit in response to reaching the threshold. The rate of performing calibration operation is increased to a higher rate T2 for a window of time W in response to initiating the change in operating voltage, after which the rate of performing calibration is returned to the rate T1.

Abstract: A thin gate-oxide dual-mode PMOS transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode PMOS transistor is biased to a high voltage. The dual-mode PMOS transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage. The dual-mode PMOS transistor has a size and gate-oxide thickness each having a magnitude that cannot accommodate a permanent tie to the high voltage. An n-well voltage switching circuit is configured to bias the switched n-well to prevent voltage damage to the dual-mode PMOS transistor without the use of native transistors.

Abstract: Some embodiments provide a method to reduce the refresh power consumption by effectively extending the memory cell retention time. Conversion from 1 cell/bit to 2N cells/bit reduces the variation in the retention time among memory cells. The conversion can be realized very simply from the structure of the DRAM array circuit, and it reduces the frequency of disturbance and power consumption by two orders of magnitude. On the basis of this conversion method, some embodiments provide a partial access mode to reduce power consumption dynamically when the full memory capacity is not required. One bit data may be stored into 1 cell for a normal operation mode and stored into 2N cells for a self refresh operation mode for a first partial access mode, while one bit data may be stored into 2N cells for both normal and self refresh operation modes.

Abstract: An embodiment provides a method, including: determining current validity timing of a non-volatile memory device having changing validity timing via: writing information to a non-volatile memory device; waiting a time after the writing; and reading the information written to the non-volatile memory device following the time. Other aspects are described and claimed.

Abstract: A static random access memory (SRAM) cell includes first and second n-channel transistors, first and second p-channel transistors, first and second enable transistors, and first and second pass gates. The first n-channel transistor, the first p-channel transistor, and the first enable transistor are connected in series between first and second reference potentials. The second n-channel transistor, the second p-channel transistor, and the second enable transistor are connected in series between the first and second reference potentials. The first pass gate is configured to selectively connect a first bitline to a first node. The first node is connected to a gate of the first n-channel transistor and a gate of the first p-channel transistor. The second pass gate is configured to selectively connect a second bitline to a second node. The second node is connected to a gate of the second n-channel transistor and a gate of the second p-channel transistor.

Abstract: A system including a state set module to arrange states of a memory cell in three sets. The memory cell stores three bits when programmed to a state. Each set includes three rows of bits. In a set, a row includes one of the three bits of the states. The first, second, and third rows of the first, second, and third sets include a first number of state transitions. The second, third, and first rows of the first, second, and third sets include a second number of state transitions. The third, first, and second rows of the first, second, and third sets include a third number of state transitions. A write module writes first, second, and third portions of data to a plurality of memory cells, each memory cell storing the three bits when programmed to a state, using states selected respectively from the first, second, and third sets.

Abstract: Disclosed is a nonvolatile memory device which includes a memory cell connected to a bit line and a word line; a page buffer electrically connected to the bit line and sensing data stored in the memory cell; and a control logic controlling the page buffer to vary a develop time of the bit line or a sensing node connected to the bit line according to a current temperature during a read operation.

Abstract: An operating method of a data storage device may include performing a first write operation on a first memory region, and performing a second write operation on a second memory region to store position information on the first write operation.

Abstract: A system includes a first plurality of memory macros and a first tracking circuit associated with a memory macro of the first plurality of memory macros. Each memory macro of the first plurality of memory macros includes a corresponding global control circuit configured to receive a first reset signal. The first tracking circuit is configured to generate the first reset signal.

Abstract: An operating method of a data storage device includes performing a read operation on a nonvolatile memory device based on a read request and a logical address from a host device, determining whether one or more physical addresses, which correspond to one or more logical addresses continuous to the logical address, are continuous to a physical address corresponding to the logical address, and prefetching data stored in a region of the nonvolatile memory device, corresponding to the one or more physical addresses, when the one or more physical addresses are determined to be continuous.