With Semiconductor Substrate Only (epo) Patents (Class 257/E27.01)
E Subclasses
- Made of compound semiconductor material, e.g. III-V material (EPO) (Class 257/E27.012)
- Integrated circuit having a two-dimensional layout of components without a common active region (EPO) (Class 257/E27.013)
- Including a field-effect type component (EPO) (Class 257/E27.014)
- With component other than field-effect type (EPO) (Class 257/E27.018)
- Bipolar transistor in combination with diode, capacitor, or resistor (EPO) (Class 257/E27.019)
- Including combination of diode, capacitor, or resistor (EPO) (Class 257/E27.024)
- Integrated circuit having a three-dimensional layout (EPO) (Class 257/E27.026)
- Including component having an active region in common (EPO) (Class 257/E27.028)
- Including component of the field-effect type (EPO) (Class 257/E27.029)
- With component other than field-effect type (EPO) (Class 257/E27.036)
- Bipolar transistor in combination with diode, capacitor, or resistor (EPO) (Class 257/E27.037)
- Including combination of diode, capacitor, or resistor (EPO) (Class 257/E27.044)
- Resistor only (EPO) (Class 257/E27.047)
- Capacitor only (EPO) (Class 257/E27.048)
- Diode only (EPO) (Class 257/E27.051)
- Thyristor only (EPO) (Class 257/E27.052)
- Bipolar component only (EPO) (Class 257/E27.053)
- Combination of lateral and vertical transistors only (EPO) (Class 257/E27.054)
- Vertical bipolar transistor only (EPO) (Class 257/E27.055)
- Vertical direct transistor of the same conductivity type having different characteristics, (e.g. Darlington transistor) (EPO) (Class 257/E27.056)
- Vertical complementary transistor (EPO) (Class 257/E27.057)
- Combination of direct and inverse vertical transistors (e.g., collector acts as emitter) (EPO) (Class 257/E27.058)
- Including field-effect component only (EPO) (Class 257/E27.059)
- Field-effect transistor with insulated gate (EPO) (Class 257/E27.06)
- Combination of depletion and enhancement field-effect transistors (EPO) (Class 257/E27.061)
- Complementary MIS (EPO) (Class 257/E27.062)
- Means for preventing a parasitic bipolar action between the different transistor regions, e.g. latch-up prevention (EPO) (Class 257/E27.063)
- Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS (EPO) (Class 257/E27.064)
- Including an N-well only in the substrate (EPO) (Class 257/E27.065)
- Including a P-well only in the substrate (EPO) (Class 257/E27.066)
- Including both N- and P- wells in the substrate, e.g. twin-tub (EPO) (Class 257/E27.067)
- Schottky barrier gate field-effect transistor (EPO) (Class 257/E27.068)
- PN junction gate field-effect transistor (Class 257/E27.069)
- Including resistor or capacitor only (EPO) (Class 257/E27.071)
- Including bipolar component (EPO) (Class 257/E27.072)
- Including diode only (EPO) (Class 257/E27.073)
- Including bipolar transistor (EPO) (Class 257/E27.074)
- Bipolar dynamic random access memory structure (EPO) (Class 257/E27.075)
- Array of single bipolar transistors only, e.g. read only memory structure (EPO) (Class 257/E27.076)
- Static bipolar memory cell structure (EPO) (Class 257/E27.077)
- Bipolar electrically programmable memory structure (EPO) (Class 257/E27.078)
- Thyristor (EPO) (Class 257/E27.079)
- Unijunction transistor, i.e., three terminal device with only one p-n junction having a negative resistance region in the I-V characteristic (EPO) (Class 257/E27.08)
- Including field-effect component (EPO) (Class 257/E27.081)
- Including bucket brigade type charge coupled device (C.C.D) (EPO) (Class 257/E27.082)
- Including charge coupled device (C.C.D) or charge injection device (C.I.D) (EPO) (Class 257/E27.083)
- Dynamic random access memory, DRAM, structure (EPO) (Class 257/E27.084)
- One-transistor memory cell structure, i.e., each memory cell containing only one transistor (EPO) (Class 257/E27.085)
- Peripheral structure (EPO) (Class 257/E27.097)
- Static random access memory, SRAM, structure (EPO) (Class 257/E27.098)
- Read-only memory, ROM, structure (EPO) (Class 257/E27.102)
- Masterslice integrated circuit (EPO) (Class 257/E27.105)