Abstract: A method for preparing nano metallic particles comprises the steps of dipping a conductive substrate in an electroplating solution containing metallic ions and performing an electroplating process to form the nano metallic particles on the conductive substrate by the reduction reaction of the metallic ions. The nano metallic particles can be used as a catalyst to perform a chemical vapor deposition process to form carbon nanotubes on the conductive substrate. Subsequently, fluorescent material can be positioned on the carbon nanotubes to form a light-emitting device. When a predetermined voltage is applied between the conductive substrate and the fluorescent material, the carbon nanotubes on the conductive substrate emit electrons due to the point discharge effect, and the electrons bombard the fluorescent material to emit light beams.

Abstract: Methods for the application of a polymer-free coating onto a medical device using plasma electrolytic deposition, comprising: (i) optionally applying a metal precoating onto a medical device; (ii) placing the medical device in an electrolyte solution comprising an electrolyte; and (iii) establishing an electric potential under plasma electrolytic deposition conditions between an electrode and the medical device, such that the plasma electrolytic deposition conditions are adequate to sustain deposition from the electrolyte solution onto the surface of the medical device to form the coating. The invention also relates to coating compositions and coated medical devices, such as stents, made according to these methods. If desired, the polymer-free coating can be a drug-eluting coating.

Abstract: A technique includes forming overlaying magnetic metal layers over a semiconductor substrate. The technique includes forming at least one resistance layer between the magnetic metal layers.

Abstract: A method for manufacturing plastic product includes the steps of: forming a work piece (30) in an injection molding apparatus, the work piece (30) including at least an original product (34), a butt end (36), and gate (32), the gate (32) connecting a corresponding original product (34) with the butt end (36); precutting the gate (32) in a mold before the work piece (30) has completely cooled; removing the work piece (30) from the injection molding apparatus; separating each original product (34).

Abstract: An electroplating system (30) and process makes electrical current density across a semiconductor device substrate (20) surface more uniform during plating to allow for a more uniform or tailored deposition of a conductive material. The electrical current density modifiers (364 and 37) reduce the electrical current density near the edge of the substrate (20). By reducing the current density near the edge of the substrate (20), the plating becomes more uniform or can be tailored so that slightly more material is plated near the center of the substrate (20). The system can also be modified so that the material that plates on electrical current density modifier portions (364) of structures (36) can be removed without having to disassemble any portion of the head (35) or otherwise remove the structures (36) from the system. This in-situ cleaning reduces the amount of equipment downtime, increases equipment lifetime, and reduces particle counts.

Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc. During the deposition, the partial enclosure and the substrate are rotated relative one another.

Abstract: A method of wiring formation includes forming a feeder film partially on a substrate, forming on the substrate a plating base film via a physical film making method so that the plate base film partially overlaps the feeder film, forming a plated wiring on the plating base film using an electrolytic plating, and selectively removing at least an area of the feeder film which is exposed from the plated wiring, using a wet etching process.

Abstract: A method and apparatus for adjusting an electric field of an electrochemical processing cell are provided. In one embodiment, a capacitive element is disposed in the processing solution. The strength, shape, or direction of the electric field in the processing solution may be modulated by charging and discharging the capacitive element in a controlled manner. Because the electric field is modulated with out passing a current from the capacitive element to the processing solution, electrochemical reactions do not occur on the interface of the capacitive element and the processing solution, thus, reduces complications caused by unwanted electrochemical reactions.

Abstract: A method of fabricating a three-dimensional microstructure provides data corresponding to information relating to the structure of a three-dimensional microstructure design. A sample is processed in accordance with the provided data by irradiating the sample with a charged-particle beam while controlling processing conditions of the charged-particle beam. Dimensions of the processed sample are compared with the provided data to identify differences between the structure of the processed sample and the structure of the three-dimensional microstructure design. The sample is then irradiated again with a charged-particle beam to correct the identified structural differences while adjusting the processing conditions of the charged-particle beam to thereby fabricate a three-dimensional microstructure having a structure substantially the same as the structure of the three-dimensional microstructure design.

Abstract: There is provided a micro-pattern forming apparatus including an electrospraying part for applying a voltage to a solution containing a sample to electrostatically atomizing the solution; a supporting part (30) for supporting a chip (26), on which the sample in the solution electrostatically atomized by the electrospraying part, is to be deposited; and a fine mask part (24) disposed between the electrospraying part and the supporting part, having a mask pattern for being passed through by the electrostatically atomized solution in order to form a micro-pattern of the sample upon the chip, wherein the mask pattern is made from a photoresist material with concavity and convexity on the side of the supporting part.

Abstract: A method for selectively dissolving the beta (?) phase of a titanium alloy out of the surface of the alloy, thereby leaving behind a nano-scale porous surface having enhanced bonding properties with either a biological tissue, such as bone, or an adhesive material, such as a polymer or ceramic by immersing the alloy in an ionic aqueous solution containing high levels of hydrogen peroxide and then exposing the alloy to an electrochemical voltage process resulting in the selective dissolution of the beta phase to form a nano-topographic metallic surface.

Abstract: A dual contact ring for contacting a patterned surface of a wafer and electrochemical plating of a metal on the patterned central region of the wafer and removing the metal from the outer, edge region of the wafer. The dual contact ring has an outer voltage ring in contact with the outer, edge region of the wafer and an inner voltage ring in contact with the inner, central region of the wafer. The outer voltage ring is connected to a positive voltage source and the inner voltage ring is connected to a negative voltage source. The inner voltage ring applies a negative voltage to the wafer to facilitate the plating of metal onto the patterned region of the wafer. A positive voltage is applied to the wafer through the outer voltage ring to remove the plated metal from the outer, edge region of the substrate.

Abstract: In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the metal plate exposed within the through holes, from the side of the conductive base member where the metal plate is not attached, thereby to fill up the through holes, in a film forming process, a Pd alloy film is formed by plating on the surface of the conductive base member after removal of the metal plate, and in a removal process, the copper plating layer is removed by selective etching, thereby to produce a hydrogen production filter that is used in a reformer of a fuel cell so as to be capable of stably producing high purity hydrogen gas.

Abstract: A plating apparatus and a plating liquid removing method removes a plating liquid remaining on a substrate-contacting portion, or portions in its vicinity, of a substrate holding member. The plating apparatus comprises a head having a rotatable housing provided with a substrate holding member for holding a substrate, a plating process container, disposed below the head, for holding a plating liquid therein, and a plating liquid removing mechanism for removing plating liquid remaining on the substrate-contacting portion, or the portions in its vicinity, at an inner circumferential edge of the substrate holding member.

Abstract: Provided is a gas molecule sensor, characterized in that the sensing element is a polycrystalline tin oxide film having a thickness less than 1 ?m. The sensing element is produced by electrolytic deposit of a tin film on an insulating support in an electromechanical cell, where the anode is comprised of tin and the cathode is a conductive film applied on the surface of the insulating support at one of its ends, the two electrodes being separated by an electrolyte comprised of a tin salt solution, and by passing a constant current through said cell. The deposit step is followed by an oxidizing step.

Abstract: A method for forming a metallization layer. A first layer is formed outwardly from a semiconductor substrate. Contact vias are formed through the first layer to the semiconductor substrate. A second layer is formed outwardly from the first layer. Portions of the second layer are selectively removed such that the remaining portion of the second layer defines the layout of the metallization layer and the contact vias. The first and second layers are electroplated by applying a bi-polar modulated voltage having a positive duty cycle and a negative duty cycle to the layers in a solution containing metal ions. The voltage and surface potentials are selected such that the metal ions are deposited on the remaining portions of the second layer. Further, metal ions deposited on the first layer during a positive duty cycle are removed from the first layer during a negative duty cycle. Finally, exposed portions of the first layer are selectively removed.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Abstract: A low cost method for fabricating microneedles is provided. According to one embodiment, the fabrication method includes the steps of: providing a substrate; forming a metal-containing seed layer on the top surface of the substrate; forming a nonconductive pattern on a portion of the seed layer; plating a first metal on the seed layer and over the edge of the nonconductive pattern to create a micromold with an opening that exposes a portion of the nonconductive pattern, the opening having a tapered sidewall surface; plating a second metal onto the micromold to form a microneedle in the opening; separating the micromold with the microneedle formed therein from the seed layer and the nonconductive pattern; and selectively etching the micromold so as to release the microneedle.

Abstract: A technique includes applying a charge to a flow plate of a fuel cell stack and depositing a material on at least a portion of the flow plate in response to the charge. In some embodiments of the invention, the technique may be applied to a fuel cell stack that includes a passageway to communicate a coolant. As a result of the technique, the fuel cell stack may include a layer to line the passageway to electrically insulate the stack from the coolant.

Abstract: A method of controlling a conductive layer deposition process includes depositing a conductive layer onto a semiconductor wafer based upon a deposition recipe, measuring a thickness of the conductive layer deposited on the semiconductor wafer, determining whether the measured thickness of the conductive layer is within a predetermined tolerance, and revising the deposition recipe if the thickness of the conductive layer is not within the predetermined tolerance.

Abstract: A system and method for processing semiconductor wafers using different wafer processes utilizes multiple processing assemblies to efficiently perform these wafer processes. The wafer processes performed by the processing assemblies may vary with respect to operating parameters or the types of wafer processes, which allows customization of the wafer processes. Each of the processing assemblies is configured to sequentially process two or more semiconductor wafers at different processing positions by sequentially transferring the semiconductor wafers to the different processing positions using a wafer transfer carousel. As the semiconductor wafers are processes at one of the processing assemblies, the processed semiconductor wafers are sequentially transferred to the next processing assembly in an efficient manner. The sequential processing of the semiconductor wafers at each of the processing assemblies and the sequential transferring of the wafers contribute to an increased throughput.

Abstract: An electrochemical processing chamber which can be modified for treating different workpieces and methods for so modifying electrochemical processing chambers. In one particular embodiment, an electrochemical processing chamber 200 includes a plurality of walls 510 defining a plurality of electrode compartments 520, each electrode compartment having at least one electrode 600 therein, and a virtual electrode unit 530 defining a plurality of flow conduits, with at least one of the flow conduits being in fluid communication with each of the electrode compartments. This first virtual electrode unit 530 may be exchanged for a second virtual electrode unit 540, without modification of any of the electrodes 600, to adapt the processing chamber 200 for treating a different workpiece.

Abstract: A method for manufacturing a multiple walled tube comprising a rolling of a plated metal strip through at least two complete revolutions to form a tube having at least a double wall which has a plated layer on the inside of the tube, said rolling being followed by a heating of the tube to cause the surface of the tube walls, which are in contact with one another, to be brazed and wherein said metal strip is plated on one side, the other side being formed by the steel of the metal strip and wherein said brazing is realized by brazing directly the plated side on the steel.

Abstract: A plating method and apparatus using contactless electrode is described. In one embodiment an inductive element is placed proximally to a substrate and a moving electromagnetic field generates an emf in the substrate to plate the surface. In another embodiment, a conductive plate is used, so that the conductive plate and the wafer, separated by a dielectric material, operate as two plates of a capacitor when voltage is applied to the conductive plate. The resulting electrostatic field impresses a charge potential on the substrate to plate the surface of the substrate.

Abstract: A method for forming a flow director on a component having a wall includes depositing at least one layer on the wall of the component. The deposition includes shaping the layer in accordance with a predetermined shape to form the flow director. An exemplary component is a turbine component with a wall having a cold surface and a hot surface. At least one film-cooling hole extends through the wall, for flowing a coolant from the cold surface to the hot surface, and defines an exit site in the hot surface of the wall. An exemplary deposition process includes delivering a mixture through a nozzle onto the wall to form the layer, where the mixture includes a powder dispersed in a liquid medium, displacing the nozzle relative to the wall and controlling the movement of the nozzle relative to the wall to form the layer in accordance with the predetermined shape.

Abstract: A method of forming cladding on products comprises: a shotblasting layer is formed on the basal body of products, i.e., a shotblasting layer of fine and uniform granules is formed on the surface of the basal body of products by shotblasting, and plated layers are plated on the shotblasting layer of the basal body of products, i.e. metal plated layers are plated on the shotblasting layer after the shotblasting layer is formed. A cladding structure on products comprises that a shotblasting layer is remained on the basal body of products, and metal plated layers of a predetermined thickness is provided on the shotblasting layer of the basal body of products. A push rod of a caulking gun with the above cladding structure is also included.

Abstract: A disposable electrochemical sensor strip is provided. The sensor strip includes an isolating sheet having at least a through hole, at least a conductive raw material mounted in the through hole, a metal film covered on the conductive raw material to form an electrode which comprises an electrode working surface for processing an electrode action, and an electrode connecting surface, at least a printed conductive film mounted on the isolating sheet and having a connecting terminal for being electrically connected to the electrode connecting surface, and a signal output terminal for outputting a measured signal produced by the electrode action.

Abstract: The present invention is directed to a plating apparatus and method in which bubbles generated at the plating surfaces are easily removed and the uniformity of the thickness of the plated film within the plated surface can be improved. The plating apparatus comprises a cassette table for loading a cassette in which a substrate having a plating surface is contained. An aligner for aligning the substrate, a rinser-dryer for rinsing and drying the substrate, and a plating unit for plating the substrate are also provided. The plating unit comprises a plating vessel containing a plating solution, a holder for holding the substrate to immerse the substrate in the plating solution in the plating vessel. The plating surface is exposed to a nozzle which ejects the plating solution toward the plating surface.

Abstract: Structure incorporating lead is fabricated from specially prepared components such that mobility of the lead is impeded when the structure is exposed to an unprotected environment such as weathering outdoors or saltwater. In a preferred embodiment, a bullet or bullet core is swaged from a number of bunched electroplated fine lead or lead-alloy wires placed in a die. The lead or lead-alloy wires may be fabricated from lead or lead-alloy wool. The lead alloy may comprise zinc and antimony. The electroplating process plates zinc on the fine wires and may plate a zinc alloy such as zinc-aluminum. The plated surface may be coated with a corrosion resistant coating such as molybdenum phosphate. In addition to bullets and bullet cores, fishing weights, lead shielding, counterweights, ballast, and other lead containing structure may be fabricated or treated using methods and materials of the present invention.

Abstract: An electromagnetic wave shielding filter for a plasma display panel, for example, and a method of manufacturing such a filter includes preparing a substrate such as a metal plate that can act as a seed layer for electrolytic plating; forming a mesh plating layer on an upper surface of the metal plate; adhering an adhesive film to an upper surface of the plating layer; and separating the adhesive film from the metal plate so that the plating layer is adhered to a lower surface of the adhesive film. An electromagnetic wave shielding layer, which is installed to shield electromagnetic waves generated during the driving of a plasma display panel, for example, is formed in a mesh pattern, and the mesh pattern is created on a metal plate by electrolytic plating.

Abstract: A method of wiring formation includes forming a feeder film partially on a substrate, forming on the substrate a plating base film via a physical film making method so that the plate base film partially overlaps the feeder film, forming a plated wiring on the plating base film using an electrolytic plating, and selectively removing at least an area of the feeder film which is exposed from the plated wiring, using a wet etching process.

Abstract: A method for fabricating a soft ferromagnetic film structure with reduced edge stress anisotropy and enhanced magnetization switching speed. A soft ferromagnetic film structure is formed over an underlying structure. The soft ferromagnetic film structure has one or more edges exhibiting edge stress anisotropy. A non-ferromagnetic film structure is formed along the one or more edges to induce stress contributions therein that control the edge stress anisotropy.

Abstract: In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.

Abstract: The present invention discloses a power supply device, particularly for supplying a controlled electrical signal in an electrochemical process, e.g., plating, etching, etc. The power delivery device provides an electrical signal with optimal characteristics and setting for processing one or more surfaces in an electrochemical process. The power delivery device comprises a power stage having an input for receiving a power signal and an output being operably connected to the object. A sensor is operably connected to the output. A controller is operably connected to the output and responsive to the sensor. A modulator is operably connected between the controller and the power stage wherein the power stage outputs the electrical signal to the object in response to the modulator and the controller.

Abstract: The present invention provides inter alia electroplating compositions, methods for use of the compositions and products formed by the compositions. Electroplating compositions of the invention are characterized in significant part by a grain refiner/stabilizer additive comprising one or more non-aromatic compounds having &pgr; electrons that can be delocalized, e.g., an &agr;,&bgr; unsaturated system or other conjugated system that contains a proximate electron-withdrawing group. Compositions of the invention provide enhanced grain refinement and increased stability in metal plating solutions, particularly in tin and tin alloy plating formulations.

Abstract: A method and apparatus for processing a microelectronic workpiece. The apparatus can include a vessel configured to receive a processing fluid and can further include a support member having a contacting portion configured to carry the microelectronic workpiece at least proximate to the vessel. The apparatus can further include a heater positioned at least proximate to at least one of the vessel and the support member to heat at least a portion of the support member. Alternatively, the heater can be positioned to heat at least a portion of the microelectronic workpiece in addition to, or in lieu of heating the support member.

Abstract: An object of the present invention is to provide a method of monitoring deterioration of an electrolytic gold plating solution which can always stably performing gold plating by continuously detecting a deterioration state of the gold sulfite complex plating solution, and to provide an apparatus for monitoring the deterioration of the electrolytic gold plating solution. The present invention is characterized by an electrolytic gold plating method for performing electrolytic gold plating on a surface of a substrate body using a gold sulfite plating solution, wherein the gold plating is performed while deterioration of the plating solution is being always or intermittently detected during plating.

Abstract: A semiconductor workpiece holder for use in processing a semiconductor workpiece includes a workpiece support operatively mounted to support a workpiece in position for processing. A finger assembly is operatively mounted upon the workpiece support and includes a finger tip. The finger assembly is movable between an engaged position in which the finger tip is engaged against the workpiece, and a disengaged position in which the finger tip is moved away from the workpiece. Preferably, at least one electrode forms part of the finger assembly and includes an electrode contact for contacting a surface of said workpiece. At least one protective sheath covers at least some of the electrode contact. According to one aspect of the invention, a sheathed electrode having a sheathed electrode tip is positioned against a semiconductor workpiece surface in a manner engaging the workpiece surface with said sheathed electrode tip.

Abstract: A wafer chuck assembly for holding a wafer during electroplating and/or electropolishing of the wafer includes a wafer chuck for receiving the wafer. The wafer chuck assembly also includes an actuator assembly for moving the wafer chuck between a first and a second position. When in the first position, the wafer chuck is opened. When in the second position, the wafer chuck is closed.

Abstract: A uniformly thick oxide film on a substrate is formed by using an anodization apparatus which deposits a blanket precursor film on a surface of a substrate; provides electrical contact to the precursor film; moves the precursor film into contact with an electrolyte solution such that substantially all electrically conductive surfaces, e.g., pin contacts, the substrate edge and a backside of the substrate are electrically isolated from the electrolyte; ensures that the surface of the precursor film on the substrate is in direct contact with the electrolyte solution; and which applies an anodizing current and/or voltage between the precursor film and a counter electrode so as to compensate for a voltage drop resulting from the presence of the electrolyte.

Abstract: A process for chrome plating a non-ferrous object includes copper plating the non-ferrous object which has had burrs and surface irregularities removed. The surface of the copper plated object is smoothed, and copper plate irregularities removed, by moving dry abrasive media over the object for a pre-determined period of time. Typically, this is done by placing the copper plated object into a finishing machine having dry abrasive media therein. The object is then chrome plated.

Abstract: A wafer is prepared for electroplating via a spin, rinse and dry process performed on the wafer prior to electroplating. The process may be performed in a standalone tool or may be performed in a preclean module integrated into an electroplating tool.

Abstract: The subject invention includes a plating apparatus (10) having an electrically conductive rack (12) and a frame assembly (14). The frame assembly (14) includes a rod (24) and series of support structures (26). A number of removable (34) and fixed (32) bars are attached to the support structures (26) such that a strand of interconnected workpieces (18) are wrapped over the bars (32, 34) to define a revolution of the interconnected workpieces (18). The plating apparatus (10) and frame assembly (14) are characterized by a series of spacers (38) mounted along the removable bars (34) for separating adjacent revolutions of the interconnected workpieces (18) such that the workpieces (18) can be effectively coated with the material.

Abstract: A non-cyanogen type electrolytic solution, for plating gold, contains a gold salt as a supply source of gold and is added with a non-cyanogen type compound wherein the electrolytic plating solution is added with one selected from a group of thiouracil; 2-aminoethanethiol; N-methylthiourea, 3-amino-5-mercapto-1,2,4-triazole; 4,6-dihydroxy-2-mercaptopyrimidine; and mercapto-nicotinate; as a compound forming a complexing compound with gold. Chloroaurate or gold sulfite is preferably used as a gold salt.

Abstract: A surface mountable laminated circuit protection device comprises a first metal layer including a first unit and a second unit, a first insulating layer disposed on the first metal layer, and a second metal layer disposed on the first insulated layer. There is also a composite electroplated layer containing carbon black disposed on the second metal layer, and a first conductive composite material having positive temperature coefficient (PTC) characteristics disposed on the composite electroplated layer containing carbon black. Above the first conductive composite material is a third metal layer. Furthermore, there is a first conducting mechanism for conducting the first metal layer and the second metal to each other; and a second conducting mechanism for conducting the third metal layer and the first metal layer to each other. The application of double-sided metal foil clad substrate simplifies the production process of the protection device and improves its structural strength and dimensional stability.

Abstract: A heat-resistant resin film having a metallic thin film accumulated thereon or an endless belt having a metallic thin film accumulated thereon having good mechanical characteristics is produced in a simple process. A metallic thin film is formed on an inner surface of a cylindrical substrate, and a layer of a heat-resistant resin is formed thereon. An accumulated body of the heat-resistant resin and the metallic thin film is peeled off from the substrate. The metallic thin film may be formed by electroplating, electroless plating or vapor deposition, or may also be formed by attaching a metallic foil having been prepared on an inner surface of the substrate. The heat-resistant resin layer is formed by injecting a polyamide acid solution in a rotational drum, and then formed by centrifugal forming by rotating the rotational drum on rollers under heating. After forming, imidization is conducted by heating and baking to form a film member of a thermosetting polyimide.

Abstract: The present invention provides inter alias electroplating compositions, methods for use of the compositions and products formed by the compositions. Electroplating compositions of the invention are characterized in significant part by a grain refiner/stabilizer additive comprising one or more non-aromatic compounds having &pgr; electrons that can be delocalized, e.g., an &agr;,&bgr; unsaturated system or other conjugated system that contains a proximate electron-withdrawing group. Compositions of the invention provide enhanced grain refinement and increased stability in metal plating solutions, particularly in tin and tin alloy plating formulations.

Abstract: The invention relates to carriers serving to supply current to workpieces to be treated electrolytically or counter-electrodes and a method for the electrolytic treatment of workpieces. The carriers according to the invention comprise at least three elongate electric current conductors, disposed parallel to one another, a first current conductor being configured in such a way that the workpieces or counter-electrodes can, for supplying electric current or for mechanical attachment, be attached to the conductor directly or via holding devices, respectively a second to nth current conductor is provided, the second current conductor being connected to the first current conductor, the third current conductor to the second current conductor etc.

Abstract: Disclosed herein are a process for easily preparing an optical element in a form of thin film which contains a functional material whose concentration changes gradationally in an in-plane direction and a thickness direction of a thin film, an electrolytic solution used for the process, and an apparatus for preparing an optical element. The process is designed to form an optical element on an optical element preparing substrate from an electrolytic solution containing a functional material by electrodeposition or photovoltaic electrodeposition. The process includes a step of changing concentration of the functional material in the electrolytic solution in the vicinity of the optical element preparing substrate, so that a resulting thin film changes gradationally in the concentration of the functional material in the in-plane direction and/or the thickness direction of the thin film.