Device Having Semiconductor Body Comprising Group Iv Elements Or Group Iii-v Compounds With Or Without Impurities, E.g., Doping Materials (epo) Patents (Class 257/E21.085)
E Subclasses
- Using physical deposition, e.g., vacuum deposition, sputtering (EPO) (Class 257/E21.091)
- Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO) (Class 257/E21.101)
- Epitaxial deposition of Group IV elements, e.g., Si, Ge, C (EPO) (Class 257/E21.102)
- Deposition on a semiconductor substrate which is different from the semiconductor material being deposited, i.e., formation of heterojunctions (EPO) (Class 257/E21.103)
- Deposition on an insulating or a metallic substrate (EPO) (Class 257/E21.104)
- Epitaxial deposition of diamond (EPO) (Class 257/E21.105)
- Doping during the epitaxial deposition (EPO) (Class 257/E21.106)
- Deposition of diamond (EPO) (Class 257/E21.107)
- Epitaxial deposition of Group III-V compound (EPO) (Class 257/E21.108)
- Using liquid deposition (EPO) (Class 257/E21.114)
- Characterized by the substrate (EPO) (Class 257/E21.119)
- Characterized by the post-treatment used to control the interface betw een substrate and epitaxial layer, e.g., ion implantation followed by annealing (EPO) (Class 257/E21.12)
- Substrate is crystalline insulating material, e.g., sapphire (EPO) (Class 257/E21.121)
- Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (EPO) (Class 257/E21.122)
- Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (EPO) (Class 257/E21.123)
- Heteroepitaxy (EPO) (Class 257/E21.124)
- Defect and dislocati on suppression due to lattice mismatch, e.g., lattice adaptation (EPO) (Class 257/E21.125)
- Group III-V compound on dissimilar Group III-V compound (EPO) (Class 257/E21.126)
- Group III-V compound on Si or Ge (EPO) (Class 257/E21.127)
- Carbon on a noncarbon semiconductor substrate (EPO) (Class 257/E21.128)
- Group IVA, e.g., Si, C, Ge on Group IVB, e.g., Ti, Zr (EPO) (Class 257/E21.129)
- The substrate is crystalline conducting material, e.g., metallic silicide (EPO) (Class 257/E21.13)
- Selective epilaxial growth, e.g., simultaneous deposition of mono- and non-mono semiconductor material (EPO) (Class 257/E21.131)
- Epitaxial re-growth of non-monocrystalline semiconductor material, e.g., lateral epitaxy by seeded solidific ation, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline material (EPO) (Class 257/E21.133)
- From the substrate during epitaxy, e.g., autodoping; preventing or using autodoping (EPO) (Class 257/E21.136)
- To control carrier lifetime, i.e., deep level dopant (EPO) (Class 257/E21.137)
- Lithium-drift (EPO) (Class 257/E21.139)
- Diffusion source (EPO) (Class 257/E21.14)
- Using diffusion into or out of a solid from or into a gaseous phase (EPO) (Class 257/E21.141)
- Using diffusion into or out of a s olid from or into a solid phase, e.g., a doped oxide layer (EPO) (Class 257/E21.144)
- Using diffusion into or out of a solid from or into a liquid phase, e.g., alloy diffusion process (EPO) (Class 257/E21.153)
- Deposition of conductive or insulating material for electrode conducting electric current (EPO) (Class 257/E21.159)
- From a gas or vapor, e.g., condensation (EPO) (Class 257/E21.16)
- Of conductive layer (EPO) (Class 257/E21.161)
- On semiconductor body comprising Group IV element (EPO) (Class 257/E21.162)
- Deposition of Schottky electrode (EPO) (Class 257/E21.163)
- O layer comprising silicide (EPO) (Class 257/E21.164)
- Conductive layer comprising silicide (EPO) (Class 257/E21.165)
- Conductive layer comprising semiconducting material (EPO) (Class 257/E21.166)
- Conductive layer comprising transition metal, e.g., Ti, W, Mo (EPO) (Class 257/E21.168)
- By physical means, e.g., sputtering, evaporation (EPO) (Class 257/E21.169)
- By chemical means, e.g., CVD, LPCVD, PECVD, laser CVD (EPO) (Class 257/E21.17)
- On semiconductor body comprising Group III-V compound (EPO) (Class 257/E21.172)
- From a liquid, e.g., electrolytic deposition (EPO) (Class 257/E21.174)
- Manufacture or post-treatment of electrode having a capacitive structure, i.e., gate structure for field-effect device (EPO) (Class 257/E21.176)
- MOS-gate structure (EPO) (Class 257/E21.177)
- Joint-gate structure (EPO) (Class 257/E21.178)
- Floating or plural gate structure (EPO) (Class 257/E21.179)
- Gate structure with charge-trapping insulator (EPO) (Class 257/E21.18)
- On semiconductor body not comprising Group IV element, e.g., Group III-V compound (EPO) (Class 257/E21.181)
- On semiconductor body comprising Group IV element excluding non-elemental Si, e.g., Ge, C, diamond, silicon compound or compound, such as SiC or SiGe (EPO) (Class 257/E21.182)
- For charge-coupled device (EPO) (Class 257/E21.183)
- PN-homojunction gate structure (EPO) (Class 257/E21.184)
- Schottky gate structure (EPO) (Class 257/E21.186)
- Heterojunction gate structure (EPO) (Class 257/E21.188)
- Making electrode structure comprising conductor-insulator-semiconductor, e.g., MIS gate (EPO) (Class 257/E21.19)
- Insulator formed on silicon semiconductor body (EPO) (Class 257/E21.191)
- Characterized by insulator (EPO) (Class 257/E21.192)
- Characterized by conductor (EPO) (Class 257/E21.195)
- Final conductor next to insulator having lateral composition or doping variation, or being formed laterally by more than one deposition step (EPO) (Class 257/E21.196)
- Final conductor layer next to insulator being silicon e.g., polysilicon, with or without impurities (EPO) (Class 257/E21.197)
- Conductor layer next to insulator is Si or Ge or C and their non-Si alloys (EPO) (Class 257/E21.201)
- Conductor layer next to the insulator is single metal, e.g., Ta, W, Mo, Al (EPO) (Class 257/E21.202)
- Conductor layer next to insulator is metallic silicide (Me Si) (EPO) (Class 257/E21.203)
- Conductor layer next to insulator is non-MeSi composite or compound, e.g., TiN (EPO) (Class 257/E21.204)
- Characterized by sectional shape, e.g., T-shape, inverted T, spacer (EPO) (Class 257/E21.205)
- Lithography, isolation, or planarization-related aspects of making conductor-insulator-semiconductor structure, e.g., sub-lithography lengths; to solve problems arising at crossing with side of device isolation (EPO) (Class 257/E21.206)
- Insulator formed on nonelemental silicon semiconductor body, e.g., Ge, SiGe, SiGeC (EPO) (Class 257/E21.207)
- Comprising layer having ferroelectric properties (EPO) (Class 257/E21.208)
- Making electrode structure comprising conductor-insulator-conuctor-insulator-semiconductor, e.g., gate stack for non-volatile memory (EPO) (Class 257/E21.209)
- Comprising charge trapping insulator (EPO) (Class 257/E21.21)
- Hydrogenation or deuterization, e.g., using atomic hydrogen or deuterium from a plasma (EPO) (Class 257/E21.212)
- To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (EPO) (Class 257/E21.214)
- Chemical or electrical treatment, e.g., electrolytic etching (EPO) (Class 257/E21.215)
- Electrolytic etching (EPO) (Class 257/E21.216)
- Plasma etching; reactive-ion etching (EPO) (Class 257/E21.218)
- Chemical etching (EPO) (Class 257/E21.219)
- Chemical cleaning (EPO) (Class 257/E21.224)
- With simultaneous mechanical treatment, e.g., chemical-mechanical polishing (EPO) (Class 257/E21.23)
- Using mask (EPO) (Class 257/E21.231)
- Characterized by their composition, e.g., multilayer masks, materials (EPO) (Class 257/E21.232)
- Characterized by their size, orientation, disposition, behavior, shape, in horizontal or vertical plane (EPO) (Class 257/E21.233)
- Characterized by their behavior during process, e.g., soluble mask, redeposited mask (EPO) (Class 257/E21.234)
- Characterized by process involved to create mask, e.g., lift-off mask, sidewall, or to modify the mask, e.g., pre-treatment, post-treatment (EPO) (Class 257/E21.235)
- Process specially adapted to improve resolution of mask (EPO) (Class 257/E21.236)
- Mechanical treatment, e.g., grinding, polishing, cutting (EPO) (Class 257/E21.237)
- To form insulating layer thereon, e.g., for masking or by using photolithographic technique (EPO) (Class 257/E21.24)
- Post-treatment (EPO) (Class 257/E21.241)
- Using masks (EPO) (Class 257/E21.258)
- Organic layers, e.g., photoresist (EPO) (Class 257/E21.259)
- Inorganic layer (EPO) (Class 257/E21.266)
- Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (EPO) (Class 257/E21.267)
- Of silicon (EPO) (Class 257/E21.268)
- Carbon layer, e.g., diamond-like layer (EPO) (Class 257/E21.27)
- Composed of oxide or glassy oxide or oxide based glass (EPO) (Class 257/E21.271)
- With perovskite structure (EPO) (Class 257/E21.272)
- Deposition of porous oxide or porous glassy oxide or oxide based porous glass (EPO) (Class 257/E21.273)
- Deposition from gas or vapor (EPO) (Class 257/E21.274)
- Deposition of boron or phosphorus doped silicon oxide, e.g., BSG, PSG, BPSG (EPO) (Class 257/E21.275)
- Deposition of halogen doped silicon oxide, e.g., fluorine doped silicon oxide (EPO) (Class 257/E21.276)
- Deposition of carbon doped silicon oxide, e.g., SiOC (EPO) (Class 257/E21.277)
- Deposition of silicon oxide (EPO) (Class 257/E21.278)
- Deposition of aluminum oxide (EPO) (Class 257/E21.28)
- Formed by oxidation (EPO) (Class 257/E21.282)
- Inorganic layer composed of nitride (EPO) (Class 257/E21.292)
- Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (EPO) (Class 257/E21.294)
- Deposition of layer comprising metal, e.g., metal, alloys, metal compounds (EPO) (Class 257/E21.295)
- Deposition of semiconductive layer, e.g., poly - or amorphous silicon layer (EPO) (Class 257/E21.297)
- Deposition of superconductive layer (EPO) (Class 257/E21.298)
- Deposition of conductive or semi-conductive organic layer (EPO) (Class 257/E21.299)
- Post treatment (EPO) (Class 257/E21.3)
- Oxidation of silicon-containing layer (EPO) (Class 257/E21.301)
- Nitriding of silicon-containing layer (EPO) (Class 257/E21.302)
- Planarization (EPO) (Class 257/E21.303)
- Physical or chemical etching of layer, e.g., to produce a patterned layer from pre-deposited extensive layer (EPO) (Class 257/E21.305)
- Doping layer (EPO) (Class 257/E21.315)
- To modify their internal properties, e.g., to produce internal imperfections (EPO) (Class 257/E21.317)
- Of diamond body (EPO) (Class 257/E21.323)
- Application of electric current or field, e.g., for electroforming (EPO) (Class 257/E21.327)
- Using natural radiation, e.g., alpha , beta or gamma radiation (EPO) (Class 257/E21.329)
- To produce chemical element by transmutation (EPO) (Class 257/E21.33)
- With high-energy radiation (EPO) (Class 257/E21.331)
- For etching, e.g., sputter etching (EPO) (Class 257/E21.332)
- For heating, e.g., electron beam heating (EPO) (Class 257/E21.333)
- Producing ions for implantation (EPO) (Class 257/E21.334)
- Using electromagnetic radiation, e.g., laser radiation (EPO) (Class 257/E21.347)
- Device comprising one or two electrodes, e.g., diode, resistor or capacitor with PN or Schottky junctions (EPO) (Class 257/E21.351)
- Diode (EPO) (Class 257/E21.352)
- Tunnel diode (EPO) (Class 257/E21.353)
- Transit time diode, e.g., IMPATT, TRAPATT diode (EPO) (Class 257/E21.354)
- Break-down diode, e.g., Zener diode, avalanche diode (EPO) (Class 257/E21.355)
- Rectifier diode (EPO) (Class 257/E21.358)
- Schottky diode (EPO) (Class 257/E21.359)
- Planar diode (EPO) (Class 257/E21.36)
- Multi-layer diode, e.g., PNPN or NPNP diode (EPO) (Class 257/E21.361)
- Gat ed-diode structure, e.g., SITh, FCTh, FCD (EPO) (Class 257/E21.362)
- Resistor with PN junction (EPO) (Class 257/E21.363)
- Capacitor with PN - or Schottky junction, e.g., varactor (EPO) (Class 257/E21.364)
- Active layer is Group III-V compound (EPO) (Class 257/E21.365)
- Device comprising three or more electrodes (EPO) (Class 257/E21.369)
- Transistor (EPO) (Class 257/E21.37)
- Heterojunction transistor (EPO) (Class 257/E21.371)
- Bipolar thin film transistor (EPO) (Class 257/E21.372)
- Lateral transistor (EPO) (Class 257/E21.373)
- Schottky transistor (EPO) (Class 257/E21.374)
- Silicon vertical transistor (EPO) (Class 257/E21.375)
- Planar transistor (EPO) (Class 257/E21.376)
- Mesa-planar transistor (EPO) (Class 257/E21.377)
- Inverse transistor (EPO) (Class 257/E21.378)
- With single crystalline emitter, collector or base including extrinsic, link or graft base formed on th e silicon substrate, e.g., by epitaxy, recrystallization, after insulating device isolation (EPO) (Class 257/E21.379)
- Where main current goes through whole of silicon substrate, e.g., power bipolar transistor (EPO) (Class 257/E21.38)
- Field-effect controlled bipolar-type transi stor, e.g., insulated gate bipolar transistor (IGBT) (EPO) (Class 257/E21.382)
- Active layer, e.g., base, is Group III-V compound (EPO) (Class 257/E21.386)
- Thyristor (EPO) (Class 257/E21.388)
- Transistor-like structure, e.g., hot electron transistor (HET); metal base transistor (MBT); resonant tunneling HET (RHET); resonant tunneling transistor (RTT ); bulk barrier transistor (BBT); planar doped barrier transistor (PDBT); charge injection transistor (CHINT); ballistic transistor (EPO) (Class 257/E21.395)
- Metal-insulator-semiconductor capacitor, e.g., trench capacitor (EPO) (Class 257/E21.396)
- Active layer is Group III-V compound (EPO) (Class 257/E21.398)
- Field-effect transistor (EPO) (Class 257/E21.4)
- Using static field induced region, e.g., SIT, PBT (EPO) (Class 257/E21.401)
- With heterojunction interface channel or gate, e.g., HFET, HIGFET, SISFET, HJFET, HEMT (EPO) (Class 257/E21.403)
- With one or zero or quasi-one or quasi-zero dimensional charge carrier gas channel, e.g., quantum wire FET; single electron trans istor (SET); striped channel transistor; coulomb blockade device (EPO) (Class 257/E21.404)
- Active layer is Group III-V compound, e.g., III-V velocity modulation transistor (VMT), NERFET (EPO) (Class 257/E21.405)
- Using static field induced region, e.g., SIT, PBT (EPO) (Class 257/E21.406)
- With an heterojunction interface channel or gate, e.g., HFET, HIGFET, SI SFET, HJFET, HEMT (EPO) (Class 257/E21.407)
- With one or zero or quasi-one or quasi-zero dimensional channel, e.g., in plane gate transistor (IPG), single electron transistor (SET), striped channel transistor, coulomb blockade device (EPO) (Class 257/E21.408)
- With an insulated gate (EPO) (Class 257/E21.409)
- Vertical transistor (EPO) (Class 257/E21.41)
- Thin film unipolar transistor (EPO) (Class 257/E21.411)
- With channel containing layer, e.g., p-base, fo rmed in or on drain region, e.g., DMOS transistor (EPO) (Class 257/E21.417)
- With multiple gate, one gate having MOS structure and others having same or a different structure, i.e., non MOS, e.g., JFET gate (EPO) (Class 257/E21.421)
- With floating gate (EPO) (Class 257/E21.422)
- With charge trapping gate insulator, e.g., MNOS transistor (EPO) (Class 257/E21.423)
- Lateral single gate silicon transistor (EPO) (Class 257/E21.424)
- With source or drain region formed by Schottky barrier or conductor-insulator-semiconductor structure (EPO) (Class 257/E21.425)
- With single crystalline channel formed on the silicon substrate after insulating device isolation (EPO) (Class 257/E21.426)
- With asymmetry in channel direction, e.g., high-voltage lateral transistor with channel containing layer, e.g., p-base (EPO) (Class 257/E21.427)
- With a recessed gate, e.g., lateral U-MOS (EPO) (Class 257/E21.428)
- With source and drain recessed by etching or recessed and refi lled (EPO) (Class 257/E21.431)
- With source and drain contacts formation strictly before final gate formation, e.g., contact first technology (EPO) (Class 257/E21.432)
- Where the source and drain or source and drain extensions are self-aligned to sides of gate (EPO) (Class 257/E21.433)
- Lateral single gate single channel silicon transistor with both lightly doped source and drain extensions and source and drain self-aligned to sides of gate, e.g., LDD MOSFET, DDD MOSFET (EPO) (Class 257/E21.435)
- Gate comprising layer with ferroelectric properties (EPO) (Class 257/E21.436)
- With lightly doped drain selectively formed at side of gate (EPO) (Class 257/E21.437)
- Using self-aligned silicidation, i.e., salicide (EPO) (Class 257/E21.438)
- Using self-aligned selective metal deposition simultaneously on gate and on source or drain (EPO) (Class 257/E21.44)
- Active layer is Group III-V compound (EPO) (Class 257/E21.441)
- With gate at side of channel (EPO) (Class 257/E21.442)
- Using self-aligned punch through stopper or threshold implant under gate region (EPO) (Class 257/E21.443)
- Using dummy gate wherein at least part of final gate is self-aligned to dummy gate (EPO) (Class 257/E21.444)
- With PN junction or heterojunction gate (EPO) (Class 257/E21.445)
- With Schottky gate, e.g., MESFET (EPO) (Class 257/E21.45)
- Active layer being Group III-V compound (EPO) (Class 257/E21.451)
- Lateral single-gate transistors (EPO) (Class 257/E21.452)
- Process wherein final gate is made after formation of source and drain regions in active layer, e.g., dummy-gate process (EPO) (Class 257/E21.453)
- Process wherein final gate is made before formation, e.g., activation anneal, of source and drain regions in active layer (EPO) (Class 257/E21.454)
- Lateral transistor with two or more independen t gates (EPO) (Class 257/E21.455)
- Charge transfer device (EPO) (Class 257/E21.456)